Abstract: Disclosed is a method of reactivating a deactivated anode that has a coating of a noble metal or noble metal oxide on a substrate. A coating of a noble metal is deposited on the anode either electrolessly or electrolytically. The noble metal in the deposited coating can be platinum, palladium, iridium, rhodium, ruthenium, osmium, or a mixture thereof.

Abstract: A method for forming filtration members using an electric potential to control the migration of electrically charged particles and hence to control the formation of a membrane layer on a substrate. In one embodiment, electrophoresis and electrodialysis processes are used to control the migration of sol particles and the deposition of the sol particles to provide a desired pore size associated with the membrane layer. In another embodiment, the substrate pores are impregnated with a reagent and, subsequently, electrophoresis and "reverse" electrophoresis processes are utilized to control the diffusion of ions in connection with the formation of the membrane layer.

Abstract: A colored anodic coating for use on surfaces of substrates, e.g. aluminum substrates in which it is desirable to maintain a high solar absorptance (a) and a high infrared emittance (e), particularly in low earth orbit space environments. This anodic coating is preferably a dark colored coating, and even more preferably a black coating. This coating allows a touch temperature within an acceptable design range to preclude burning of an astronaut in case of contact, but also allows a solar radiation absorption in an amount such that an a/e ratio of unity is achieved. The coating of the invention comprises a first layer in the form of an acid anodized colored anodic layer for achieving a high solar absorptance and a second or high emittance layer in the form of a clear acid anodized layer for achieving a high emittance. The entire coating is quite thin, e.g. 1-2 mils and is quite stable in a hostile space environment of the type encountered in a low earth orbit.

Abstract: A process for stably producing a zinc oxide thin film by electrolysis with excellent adhesion to a substrate is described. In particular, a zinc oxide thin film suitably used as a light confining layer of a photoelectric conversion element is formed on a conductive substrate by applying a current between a conductive substrate immersed in an aqueous solution containing at least nitrate ions, zinc ions, and a carbohydrate, and an electrode immersed in the solution.

Abstract: A method for manufacturing a photovoltaic device comprising a metal layer, a first transparent conductive layer, a semiconductor layer, and a second transparent conductive layer sequentially stacked on a substrate comprising iron, comprises the steps of forming the metal layer by electro-deposition of the metal layer from a solution and forming the first transparent conductive layer by electro-deposition of the first transparent conductive layer from a solution.

Abstract: This invention provides a method for the anodization of magnesium in magnesium based alloys using an electrolytic solution containing ammonia. The use of such an electrolytic solution alters the manner in which the anodization occurs to provide a coating on the magnesium material without spark formation.

Abstract: A metal oxide layer is provided around a thermocouple element. The metal oxide layer is formed by preparing a sol, in which particulates of a metal oxide are dispersed, by a sol-gel method, dipping the thermocouple element in this sol, energizing the thermocouple element as a cathode for bonding the precursor particulates of the metal oxide thereto, and heat treating the same. The thermocouple according to the present invention is compact with a thin insulating layer, excellent in flexibility, and provides no gas adsorption source.

Abstract: A method of fabricating two-dimensional regimented and quasi periodic arrays of metallic and semiconductor nanostructures (quantum dots) with diameters of .about.100 .ANG.(10 nm) includes the steps of polishing and anodizing a substrate to form a regimented quasi-periodic array of nanopits. The array forms a template for metallic or semiconductor material. The desired material is deposited in the nanopits by immersing the substrate in an appropriate solution and using the substrate as one cathode and inserting a second cathode in the solution.

Abstract: The present invention relates to a method for forming a silicon dioxide layer on a silicon substrate, which is suitable for use as a thin-gate oxide. The method includes conducting an electrolytic reaction at a room temperature such that a silicon dioxide layer is formed on a silicon substrate acting as an anode, wherein pure water is used as an electrolyte of the electrolytic reaction. The silicon dioxide layer is further subjected with a rapid thermal densification carried out in an inert gas atmosphere and at a temperature of 700.degree.-1000.degree. C. for a period of time such that the silicon dioxide layer formed on said silicon substrate is densified.

Abstract: A sensor arrangement having a substrate of doped silicon with channels in a principal face, a selective means for detecting a material, the selective means covering the principal face without filling the channels, and a measuring instrument for registering a physical quantity dependent on the influence of a material is provided. A catalytic layer is particularly used as selective means and a temperature sensor is particularly used as measuring instrument. Alternatively, the sensor arrangement is fashioned as a capacitor having a porous cooperating electrode. The channels are preferably produced by electrochemical etching.

Abstract: High power density electrochemical capacitors may be pretreated by immersing the electrodes therefore in an alkaline solution. Thereafter the immersed electrode are subjected to high power pulses for brief periods of time. The pretreatment process forms an activated oxide layer on the electrode surface. The resulting device is capable of delivering high current pulses with enhanced discharge voltage.

Abstract: A method for forming a fluorinated silicon dioxide layer on a silicon substrate is brought about by anodic oxidation at room temperature. The fluorinated silicon dioxide layer may serve as a field oxide layer or the oxide layer of a thin film transistor. The method involves an electrolytic reaction making use of the silicon substrate as an anode and an electrolyte made of a hydrosilicofluoric acid aqueous solution containing the hydrosilicofluoric acid and the water in a volumetric ratio of about 1:1000. The electrolytic reaction is brought about by a current density of about 1 mA/cm.sup.2. The oxide layer is formed on the anode at a rate of 1 .mu.m/hr and is proved to contain a Si-F bond by the FTIR analysis.

Abstract: Crystalline REBa.sub.2 Cu.sub.3 O.sub.7-x superconductors are obtained by a constant-potential or current density electrochemical deposition in an alkaline hydroxide molten flux in a three-electrode, single-compartment cell operating at a temperature below 500.degree. C.

Abstract: A first pair electrodes consisting of an anode to which a plurality of wiring lines to be anodized are connected and a cathode that is opposed to the anode, and a second pair electrodes for collecting impurities in a forming solution are immersed in a forming solution. A voltage is applied to the plurality of wiring lines in such a manner that at least one of the plurality of wiring lines receives the voltage for a different period than the other wiring lines.

Abstract: The present invention provides a composite oxide thin film which is characterized in that said thin film is formed, by energizing a work electrode and an opposite electrode immersed in a solution containing reactive components, through the reaction between said reactive components in the solution and said work electrode. More particularly, the present invention provides a composite oxide thin film formed through an electric-chemical reaction under water thermal conditions. According to the present invention, improvement of crystallinity is promoted by the use of water thermal conditions as compared with the conventional thin film forming methods, and it is possible to obtain a uniform composite oxide thin film having an excellent crystallinity directly at a relatively low temperature. A large-area thin film can thus easily be manufactured.

Abstract: A method is provided for forming a tough, electrical insulating layer on a surface of a copper material. The copper material is made of copper of a copper-based alloy at least in the surface thereof. According to the method, the copper material is anodized first in an alkaline electrolyte bath of a caustic alkali to form a thin film layer of cupric oxide on the surface of the copper material, and next in an acidic electrolytic bath of a hexacyanoiron complex.

Abstract: The invention relates to aqueous electrocoating paints which contain 2 to 10% by weight of an anticorrosive pigment based on zinc silicate in combination with 1 to 15% by weight of a very fine quartz powder or cristobalite powder coated with epoxysilane or aminosilane, the percentages by weight being based on the total solids content of the electrocoating paint and the anticorrosive pigment being preparable by fusing together 35 to 65% by weight of ZnO, 15 to 35% by weight of SiO.sub.2 and 0 to 20% by weight of B.sub.2 O.sub.3 and/or 0 to 20% by weight of WO.sub.3 and/or 0 to 20% by weight of MoO.sub.3 and/or 0 to 20% by weight of SnO.sub.2, the components being fused together using at least one of the cited oxides besides ZnO and SiO.sub.2 in such a manner that the percentages by weight always total 100.

Abstract: An electrodeposition paint composition which contains at least one lanthanum compound. When this composition is used, electrolytically deposited coating films exhibiting excellent corrosion resistance can be provided, without using rust inhibiting pigments such as of lead compounds or chromium compounds which are liable to cause environmental pollution.

Abstract: A thin film semiconductor device comprising a semiconductor layer and an electrically conductive thin film which are formed by an alternate current plating method, and a process for producing thereof.

Abstract: Process for oxidizing hydroxymethylpyridine derivatives to pyridinecarboxylic acid derivatives at nickel oxide hydroxide anodesA process is described for oxidizing o-hydroxymethylpyridine derivatives into their pyridinecarboxylic acid derivatives at nickel oxide hydroxide anodes.

Abstract: A treating solution for forming a hydroxide film on each surface of zinc-plated steel plates by cathodic electrolysis is here disclosed which comprises (a) 0.2 to 50 g/l of one or more metal ions selected from the group consisting of Mg.sup.2+, Cr.sup.3+, Ca.sup.2+, Ni.sup.2+, Co.sup.2+ and Al.sup.3+, and (b) 0.1 to 50 g/l of one or more oxidizing agents selected from the group consisting of nitrate ions, nitrite ions, chlorate ions, bromate ions and hydrogen peroxide. A process for the surface treatment of the zinc-plated steel plates by the use of this treating solution is also disclosed.

Abstract: A metallized web of barrier packaging material e.g. metallized plastic film, is made transparent to microwaves (without loss of its barrier properties) by passing it through an electrolyte in a bath to anodize the metal and convert it to its oxide and/or hydroxide.

Abstract: An electrical insulating coating layer having excellent adhesion, toughness and heat resistance is formed on a surface of a copper material by anodizing the copper material under a low current in an acid bath of a hexacyanoiron complex. Copper materials such as coil wires can hence be provided with a thin, heat-resistant, electrical insulating layer, whereby the values of the copper materials can be heightened.

Abstract: A method is provided for electrolytic coating of a rectifier metal with a hard, adherent, uniform and corrosion-resistant coating which predominates in vanadium oxides. A rectifier metal (anode) and a metal cathode are immersed in the electrolytic bath and voltage potential is applied across the two electrodes and raised to about 280 volts within about 25 to about 35 seconds, and thereafter raised further therefrom to between about 280 and about 360 volts within a few minutes until the desired coating thickness is obtained. The electrolytic bath comprises a mixture of a major amount of alkali metal orthovanadate and a minor amount of alkali metal silicate in water.