Etchant Contains Fluoride Ion Patents (Class 216/107)
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Patent number: 12139639Abstract: A heat transfer system is disclosed that includes a heat transfer fluid circulation loop, and also a heat exchanger that includes an aluminum alloy exterior surface having thereon a top surface coat derived from a composition comprising a trivalent chromium salt and an alkali metal hexafluorozirconate.Type: GrantFiled: February 28, 2014Date of Patent: November 12, 2024Assignee: CARRIER CORPORATIONInventors: Mark R. Jaworowski, Mary Teresa Lombardo, Michael F. Taras, Mel Woldesemayat, Stephanie Bealing, Matthew Patterson
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Patent number: 9978610Abstract: Methods and apparatuses for filling features with metal materials such as tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a metal such as a tungsten-containing material followed by removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ratio feature. The portion may be removed by exposing the tungsten-containing material to a plasma generated from a fluorine-containing nitrogen-containing gas and pulsing and/or ramping the plasma during the exposure.Type: GrantFiled: August 18, 2016Date of Patent: May 22, 2018Assignee: Lam Research CorporationInventors: Waikit Fung, Liang Meng, Anand Chandrashekar
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Patent number: 9799533Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.Type: GrantFiled: June 9, 2016Date of Patent: October 24, 2017Assignee: Applied Materials, Inc.Inventors: Jeffrey W. Anthis, Benjamin Schmiege, David Thompson
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Patent number: 9460961Abstract: In one embodiment, a method for etching a copper layer disposed on a substrate includes directing reactive ions to the substrate when a mask that defines an exposed area and protected area is disposed on the copper layer, wherein an altered layer is generated in the exposed area comprising a chemically reactive material; and exposing the copper layer to a molecular species that is effective to react with the chemically reactive material so as to remove the altered layer.Type: GrantFiled: August 5, 2014Date of Patent: October 4, 2016Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Thomas R. Omstead, Tristan Ma, Ludovic Godet
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Patent number: 9390940Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.Type: GrantFiled: March 12, 2014Date of Patent: July 12, 2016Assignee: Applied Materials, Inc.Inventors: Jeffrey W. Anthis, Benjamin Schmiege, David Thompson
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Patent number: 8945415Abstract: A method is described for etching ceramic phosphor converters. The method includes contacting a surface of the converter with a solution of phosphor acid for a time sufficient to etch the converter. The method is applicable to ceramic phosphor converters comprising a phosphor having a general formula MxAlyOz:RE wherein M is a metal and RE is a rare earth element.Type: GrantFiled: June 14, 2013Date of Patent: February 3, 2015Assignee: OSRAM SYLVANIA Inc.Inventor: Alan Piquette
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Patent number: 8877075Abstract: In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The non-uniform top surface includes a plurality of protrusions. The method further includes removing the plurality of protrusions by exposing the layer to a fluid that has gas bubbles and a liquid.Type: GrantFiled: February 1, 2012Date of Patent: November 4, 2014Assignee: Infineon Technologies AGInventor: Johann Kosub
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Patent number: 8623236Abstract: A titanium nitride-stripping liquid for stripping a titanium nitride coating film, the titanium nitride-stripping liquid being capable of stripping a titanium nitride coating film even in a semiconductor multilayer laminate having particularly a layer that includes tungsten or a tungsten alloy, without corrosion of this layer is provided, and furthermore, a titanium nitride-stripping liquid which can strip a titanium nitride coating film without affecting an insulating layer is provided. A titanium nitride-stripping liquid including hydrofluoric acid, hydrogen peroxide and water, and further including an inorganic acid other than hydrofluoric acid.Type: GrantFiled: July 10, 2008Date of Patent: January 7, 2014Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Akira Kumazawa, Takahiro Eto, Takayuki Haraguchi
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Patent number: 8426319Abstract: An etching solution for a metal hard mask. The etching solution comprises a mixture of a dilute HF (hydrofluoric acid) and a silicon containing precursor. The etching solution also comprises a surfactant agent, a carboxylic acid, and a copper corrosion inhibitor. The etching solution is selectively toward etching the metal hard mask material (e.g., Titanium) while suppressing Tungsten, Copper, oxide dielectric material, and carbon doped oxide.Type: GrantFiled: May 28, 2008Date of Patent: April 23, 2013Assignee: Intel CorporationInventors: Nabil G. Mistkawi, Lourdes Dominguez
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Patent number: 8377325Abstract: Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.Type: GrantFiled: February 22, 2011Date of Patent: February 19, 2013Assignee: Samsung Display Co., Ltd.Inventors: Nam-Seok Suh, Sun-Young Hong, Jong-Hyun Choung, Bong-Kyun Kim, Hong-Sick Park, Jean-Ho Song, Wang-Woo Lee, Do-Won Kim, Sang-Woo Kim, Won-Guk Seo, Hyun-Cheol Shin, Ki-Beom Lee, Sam-Young Cho
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Patent number: 8308963Abstract: The present invention discloses an etchant for etching at least two different metal layers, the etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—). The present invention also discloses a method of fabricating a metal wiring on a substrate, the method comprising forming a first metal layer on a substrate, forming a second metal layer on the first metal layer, and simultaneously etching the first metal layer and the second metal layer with an etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—).Type: GrantFiled: July 20, 2010Date of Patent: November 13, 2012Assignee: LG Display Co., Ltd.Inventors: Gee Sung Chae, Gyoo Chul Jo, Yong Sup Hwang
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Patent number: 8043974Abstract: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl?).Type: GrantFiled: July 8, 2008Date of Patent: October 25, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Dae Park, Young You, Tae-Hyo Choi, Hun-Jung Yi, Kun-Hyung Lee
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Patent number: 8007594Abstract: A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen.Type: GrantFiled: July 12, 2010Date of Patent: August 30, 2011Assignee: Hynix Semiconductor Inc.Inventors: Young Bang Lee, Kwang Kee Chae, Ok Min Moon
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Patent number: 7998359Abstract: A method for selectively etching a silicon-containing film on a silicon substrate is disclosed. The method includes depositing a silicon-containing film on the silicon substrate. The method further includes baking the silicon-containing film to create a densified silicon-containing film, wherein the densified film has a first thickness. The method also includes exposing the silicon substrate to an aqueous solution comprising NH4F and HF in a ratio of between about 6:1 and about 100:1, at a temperature of between about 20° C. and about 50° C., and for a time period of between about 30 seconds and about 5 minutes; wherein between about 55% and about 95% of the densified silicon-containing film is removed.Type: GrantFiled: September 24, 2010Date of Patent: August 16, 2011Assignee: Innovalight, Inc.Inventors: Elena Rogojina, Eric Rosenfeld, Dmitry Poplavskyy
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Patent number: 7902081Abstract: A method of etching polysilicon includes exposing a substrate comprising polysilicon to a solution comprising water, HF, and at least one of a conductive metal nitride, Pt, and Au under conditions effective to etch polysilicon from the substrate. In one embodiment, a substrate first region comprising polysilicon and a substrate second region comprising at least one of a conductive metal nitride, Pt, and Au is exposed to a solution comprising water and HF. The solution is devoid of any detectable conductive metal nitride, Pt, and Au prior to the exposing. At least some of the at least one are etched into the solution upon the exposing. Then, polysilicon is etched from the first region at a faster rate than any etch rate of the first region polysilicon prior to the etching of the at least some of the conductive metal nitride, Pt, and Au.Type: GrantFiled: October 11, 2006Date of Patent: March 8, 2011Assignee: Micron Technology, Inc.Inventors: Prashant Raghu, Vishwanath Bhat, Niraj Rana
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Patent number: 7686899Abstract: The invention relates to a process for producing a sliding bearing with a sliding surface, which is made of a copper multicomponent alloy with at least two phase constituents, in which process at least one phase constituent at the sliding surface is dissolved by means of an acid, and at least one further phase constituent is retained in a raised form. The sliding bearing preferably is made of a copper/aluminum multicomponent bronze.Type: GrantFiled: March 30, 2006Date of Patent: March 30, 2010Assignee: Wieland-Werke AGInventors: Adolf Grohbauer, Manfred Hage, Michael Scharf
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Patent number: 7578889Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.Type: GrantFiled: March 30, 2007Date of Patent: August 25, 2009Assignee: Lam Research CorporationInventors: Hong Shih, Yaobo Yin, Shun Jackson Wu, Armen Avoyan, John E. Daugherty, Linda Jiang
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Manufacturing method of glass substrate for magnetic disk, and manufacturing method of magnetic disk
Patent number: 7314575Abstract: A method for manufacturing a glass substrate for a magnetic disk comprises mirror surface polishing and cleaning of a glass substrate, wherein polishing agent of which the principal component is rare-earth oxide with content of fluorine 5% by weight or less, is supplied to the glass substrate, the surface of the glass substrate is subjected to mirror surface polishing by relatively moving the polishing cloth and the glass substrate, then this glass substrate is brought into contact with a cleaning solution including ascorbic acid, fluorine ion, and sulfuric acid of 3% by weight or more, and the polishing agent is dissolved and removed. The concentration of the ascorbic acid included in the cleaning solution is 0.1% by weight or more, and the content of the fluorine ion is 1 ppm to 40 ppm. At least a magnetic layer is formed on the obtained glass substrate to manufacture a magnetic disk.Type: GrantFiled: September 29, 2005Date of Patent: January 1, 2008Assignees: Hoya Corporation, Hoya Glass Disk (thailand) Ltd.Inventors: Yoshinori Marumo, Intanon Sitalaphruek -
Patent number: 7306681Abstract: A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cleaning solution including hydrogen chloride and hydrogen peroxide (H2O2) to clean a semiconductor substrate without using an alkaline solution including ammonium hydroxide. Accordingly, a clean surface of a semiconductor substrate is provided in selective epitaxial growth (SEG) process to grow an epitaxial layer with smooth surface.Type: GrantFiled: May 12, 2004Date of Patent: December 11, 2007Assignee: United Microelectronics Corp.Inventors: Ya-Lun Cheng, Yi-Chia Lee, Yu-Ren Wang, Neng-Hui Yang
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Patent number: 7060631Abstract: The invention encompasses a semiconductor processing method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising Cl?, NO3? and F?. The invention also includes a semiconductor processing method of forming an opening to a copper-containing substrate. Initially, a mass is formed over the copper-containing substrate. The mass comprises at least one of a silicon nitride and a silicon oxide. An opening is etched through the mass and to the copper-containing substrate. A surface of the copper-containing substrate defines a base of the opening, and is referred to as a base surface. The base surface of the copper-containing substrate is at least partially covered by at least one of a copper oxide, a silicon oxide or a copper fluoride.Type: GrantFiled: May 16, 2005Date of Patent: June 13, 2006Assignee: Micron Technology, Inc.Inventor: Paul A. Morgan
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Patent number: 6936183Abstract: A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.Type: GrantFiled: October 8, 2002Date of Patent: August 30, 2005Assignee: Applied Materials, Inc.Inventors: Jeffrey D. Chinn, Sofiane Soukane
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Patent number: 6902626Abstract: A liquid etchant and a method for roughening a copper surface each capable of providing copper with a roughened surface increased in acid resistance regardless of a chlorine ion in a short period of time, to thereby ensure firm adhesion between a copper conductive pattern and an outer layer material during manufacturing of a printed circuit board, resulting in the manufacturing being highly simplified. The liquid etchant includes a main component containing an oxo acid such as sulfuric acid and a peroxide such as hydrogen peroxide. Also, the liquid etchant includes an auxiliary component containing a tetrazole such as 5-aminotetrazole or the like, or a 1,2,3-azole. The liquid etchant permits a copper surface to be roughened in an acicular manner.Type: GrantFiled: October 29, 2003Date of Patent: June 7, 2005Assignee: Ebara Densan Ltd.Inventors: Yoshihiko Morikawa, Kazunori Senbiki, Nobuhiro Yamazaki
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Patent number: 6893578Abstract: An etching composition and method is disclosed for removing an oxide sacrificial material during manufacture of semiconductor devices including micromechanical, microelectromechanical or microfluidic devices. The etching composition and method are based on the combination of hydrofluoric acid (HF) and sulfuric acid (H2SO4). These acids can be used in the ratio of 1:3 to 3:1 HF:H2SO4 to remove all or part of the oxide sacrificial material while providing a high etch selectivity for non-oxide materials including polysilicon, silicon nitride and metals comprising aluminum. Both the HF and H2SO4 can be provided as “semiconductor grade” acids in concentrations of generally 40-50% by weight HF, and at least 90% by weight H2SO4.Type: GrantFiled: December 5, 2001Date of Patent: May 17, 2005Assignee: Sandia CorporationInventors: Peggy J. Clews, Seethambal S. Mani
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Patent number: 6793838Abstract: The present invention relates to a chemical milling solution and a chemical milling process for removing a desired depth of material from metal parts. The milling solution contains nitric acid, hydrofluoric acid, a wetting agent, such as a surfactant, dissolved titanium, and the balance water. The solution is maintained at a temperature in the range of from about 110° F. to about 130° F. The metal part to be milled is immersed in the milling solution for a time sufficient to remove a desired depth of material from at least one surface of the part.Type: GrantFiled: September 28, 2001Date of Patent: September 21, 2004Assignee: United Technologies CorporationInventors: James O. Hansen, Kenneth C. Long, Michael A. Jackson, Henry M. Hodgens
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Patent number: 6706121Abstract: In a method of treating substrates a treatment fluid is fed into a collection vessel after treatment, at least a portion of the treatment fluid is withdrawn from the collection vessel and returned to respective reservoir and the collection vessel is rinsed before receiving another treatment fluid.Type: GrantFiled: October 23, 2002Date of Patent: March 16, 2004Assignee: Mattson Wet ProductsInventors: Manfred Schenkl, Robert Pesce, John Oshinowo, Uwe Müller
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Patent number: 6692580Abstract: A method of cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed in the dielectric layer and the cap layer, exposing the first metal layer. Then, a post-etching cleaning step is carried out to clean the dual damascene opening, and there are two types of cleaning methods. The first method uses a fluorine-based solvent to clean the dual damascene opening. An alternative cleaning method uses a hydrogen peroxide based solvent at a high temperature, followed by a hydrofluoric acid solvent cleaning step. Then, an argon gas plasma is sputtered to clean the dual damascene opening before a second metal layer fills in the dual damascene opening.Type: GrantFiled: April 4, 2003Date of Patent: February 17, 2004Assignee: United Microelectronics Corp.Inventors: Chih-Ning Wu, Sun-Chieh Chien
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Patent number: 6666987Abstract: A liquid etchant and a method for roughening a copper surface each capable of providing copper with a roughened surface increased in acid resistance regardless of a chlorine ion in a short period of time, to thereby ensure firm adhesion between a copper conductive pattern and an outer layer material during manufacturing of a printed circuit board, resulting in the manufacturing being highly simplified. The liquid etchant includes a main component containing an oxo acid such as sulfuric acid and a peroxide such as hydrogen peroxide. Also, the liquid etchant includes an auxiliary component containing a tetrazole such as 5-aminotetrazole or the like, or a 1,2,3-azole. The liquid etchant permits a copper surface to be roughened in an acicular manner.Type: GrantFiled: June 8, 1999Date of Patent: December 23, 2003Assignee: Ebara Densan Ltd.Inventors: Yoshihiko Morikawa, Kazunori Senbiki, Nobuhiro Yamazaki
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Patent number: 6656294Abstract: It is an object of the present invention to provide a processing method for preventing elution of lead in a lead-containing copper alloy to prevent lead from eluting from a faucet metal, etc. made of a lead-containing copper alloy, and a drinking water service fitting made of a lead-containing copper alloy in which elution of lead has been prevented. By forming a chromate film on the surface of a lead-containing copper alloy material, it is possible to reduce elution of the lead left in a limited amount on the surface. A drinking water service fitting made of a lead-containing copper alloy is immersed in an alkaline etching solution in a pre-processing step for a nickel chromium plating step to selectively remove lead on the surface of the lead-containing copper alloy material and is then activated in a solution such as sulfuric acid and hydrochloric acid.Type: GrantFiled: June 2, 2000Date of Patent: December 2, 2003Assignee: Toto Ltd.Inventors: Masashi Kawamoto, Akira Gotou, Mituo Imamoto
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Patent number: 6653243Abstract: The invention encompasses a semiconductor processing method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising Cl+, NO3+ and F+. The invention also includes a semiconductor processing method of forming an opening to a copper-containing substrate. Initially, a mass is formed over the copper-containing substrate. The mass comprises at least one of a silicon nitride and a silicon oxide. An opening is etched through the mass and to the copper-containing substrate. A surface of the copper-containing substrate defines a base of the opening, and is referred to as a base surface. The base surface of the copper-containing substrate is at least partially covered by at least one of a copper oxide, a silicon oxide or a copper fluoride.Type: GrantFiled: May 25, 2000Date of Patent: November 25, 2003Assignee: Micron Technology, Inc.Inventor: Paul A. Morgan
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Patent number: 6605230Abstract: The present invention relates to a novel process for removing sidewall residue after dry-etching process. Conventionally, after dry-etching, photoresist and sidewall residues are removed by ozone ashing and hot sulfuric acid. Normally, they are hard to be removed completely. It was found in the present invention that the addition of fluorine-containing compound, preferably hydrogen fluoride and ammonium fluoride, in sulfuric acid results in complete removal of photoresist and sidewall residue without the need for stripper. The process is simple and does not affect the original procedures or the other films on the substrate. The present invention also relates to a novel solution for removing sidewall residue after dry-etching, which comprises sulfuric acid and a fluorine-containing compound, preferably hydrogen fluoride and ammonium fluoride, in the range of from 10:1 to 1000:1 by weight.Type: GrantFiled: March 26, 1999Date of Patent: August 12, 2003Assignee: Merck Patent GmbHInventors: Ming-Chi Liaw, Tien-Sheng Chao, Tan-Fu Lei
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Patent number: 6589439Abstract: A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.Type: GrantFiled: June 6, 2001Date of Patent: July 8, 2003Assignee: Arch Specialty Chemicals, Inc.Inventors: Kenji Honda, Michelle Elderkin
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Patent number: 6589882Abstract: The invention includes a method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising NO3−, F− and one or more organic acid anions having carboxylate groups. The invention also includes a semiconductor processing method of forming an opening to a copper-containing material. A mass is formed over a copper-containing material within an opening in a substrate. The mass contains at least one of an oxide barrier material and a dielectric material. A second opening is etched through the mass into the copper-containing material to form a base surface of the copper-containing material that is at least partially covered by particles comprising at least one of a copper oxide, a silicon oxide or a copper fluoride. The base surface is cleaned with a solution comprising nitric acid, hydrofluoric acid and one or more organic acids to remove at least some of the particles.Type: GrantFiled: October 24, 2001Date of Patent: July 8, 2003Assignee: Micron Technology, Inc.Inventors: Michael T. Andreas, Paul A. Morgan
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Patent number: 6585910Abstract: An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.Type: GrantFiled: March 26, 1999Date of Patent: July 1, 2003Assignee: Stella Chemifa Kabushiki KaishaInventors: Hirohisa Kikuyama, Masayuki Miyashita, Tatsuhiro Yabune, Tadahiro Ohmi
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Patent number: 6540931Abstract: When iron group, especially high nickel, metal alloys that contain substantial amounts of copper are pickled, a displacement coating of copper that is called a “copper kiss” often forms on the pickled surface from the dissolved copper ions in the pickling solution before the pickling solution can be rinsed away. Traditionally this has been removed by treatment with aqueous ammonia, an annoying and potentially hazardous reagent that in many instances requires expensive pollution abatement devices. In this invention, copper kiss is equally effectively removed by treatment with a mixture of sulfuric acid and hydrogen peroxide, optionally also containing hydrofluoric acid.Type: GrantFiled: March 15, 2000Date of Patent: April 1, 2003Assignee: Henkel CorporationInventors: Lawrence E. Faw, Dane G. Armendariz, John M. Binkley, Paul F. Davis
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Patent number: 6383272Abstract: A composition and process are described which are useful in treating metal surfaces, which composition comprises an oxidizer, an acid, a corrosion inhibitor, an organic nitro compound and, optionally, a benzotriazole with an electron withdrawing group in the 1-position which electron withdrawing group is a stronger electron withdrawer than a hydrogen group, optionally, a source of adhesion enhancing species selected from the group consisting of molybdates, tungstates, tantalates, niobates, vanadates, isopoly or heteropoly acids of molybdenum, tungsten, tantalum, niobium, vanadium, and combinations of any of the foregoing and optionally but preferably a source of halide ions. The composition and process are useful in increasing the adhesion of metal surfaces to polymeric substances and in preserving said adhesion through temperature variation.Type: GrantFiled: June 8, 2000Date of Patent: May 7, 2002Inventor: Donald Ferrier
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Patent number: 6361712Abstract: A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.Type: GrantFiled: October 15, 1999Date of Patent: March 26, 2002Assignee: Arch Specialty Chemicals, Inc.Inventors: Kenji Honda, Michelle Elderkin
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Publication number: 20020033379Abstract: The present invention is to provide a hydrophilic treating method of the surface of metal comprising, the first process which treat the surface of metal with a chemical conversion solution to form a chemical conversion film on the metal surface while etching the metal surface and the second process which remove said film formed on the surface of metal to obtain rougher surface, and the final process which forms a hydrophilic film on the surface of metal. Desirably the surface roughness indicated by Rz after above mentioned second process is rougher than 1.5 &mgr;m.Type: ApplicationFiled: August 1, 2001Publication date: March 21, 2002Applicant: Nihon Parkerizing Co., Ltd.Inventors: Hiroki Hayashi, Mitsuhiro Matsumoto, Hiroyuki Iizuka
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Patent number: 6270590Abstract: A method for treating a component made of a copper-based alloy containing lead. The component has Pb and Pb salts on a surface thereof. The method includes the step of etching the surface of the component selectively to remove almost entirely the Pb and Pb salts from the surface. The etching includes treating the surface with an acidic aqueous solution that is a) a non-oxidizing acidic aqueous solution of an acid capable of forming soluble Pb salts or b) an oxidizing acidic aqueous solution of an organic acid mixed with peroxide. The method also includes the step of passivating the etched surface whereby to inhibit release of any Pb or Pb salts remaining in the component when the passivated surface is in contact with water.Type: GrantFiled: November 19, 1997Date of Patent: August 7, 2001Assignee: Europa Metalli S.p.A.Inventor: Aldo Giusti
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Patent number: 6123088Abstract: A cleaner composition for removing from within a microelectronic fabrication a copper containing residue layer in the presence of a copper containing conductor layer, and a method for stripping from within a microelectronic fabrication the copper containing residue layer in the presence of the copper containing conductor layer. The cleaner composition comprises: (1) a hydroxyl amine material; (2) an ammonium fluoride material; and (3) a benzotriazole (BTA) material. The cleaner composition contemplates the method for stripping from within the microelectronic fabrication the copper containing residue layer in the presence of the copper containing conductor layer.Type: GrantFiled: December 20, 1999Date of Patent: September 26, 2000Assignee: Chartered Semiconducotor Manufacturing Ltd.Inventor: Kwok Keung Paul Ho
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Patent number: 6123865Abstract: A method for improving etch uniformity during a wet etching process is disclosed. The method comprises the steps of first rinsing the wafer to form a water film over the wafer surface, followed by liquid phase etching. The water film helps the subsequent viscous etchant to be spread across the wafer surface more uniformly to thereby improve the etch uniformity.Type: GrantFiled: December 7, 1998Date of Patent: September 26, 2000Assignees: ProMOS Technologies, Inc., Mosel Vitelic, Inc., Siemens AGInventors: Wei-Chih Lin, Ming-Sheng Kao, Ming-Li Kung, Chih-Ming Lin
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Patent number: 6083413Abstract: A process for removing metallic material, for instance copper, iron, nickle and their oxides, from a surface of a substrate such as a silicon, silicon oxide or gallium arsenide substrate. The process includes the steps of: a) placing the substrate in a reaction chamber; b) providing in the reaction chamber a gas mixture, the mixture comprising a first component which is fluorine or a fluorine-containing compound, which will spontaneously dissociate upon adsorption on the substrate surface and a second component which is a halosilane compound, the halosilane, and the fluorine if present, being activated by: i) irradiation with UV; ii) heating to a temperature of about 800.degree. C. or higher; or iii) plasma generation, to thereby convert said metallic material to a volatile metal-halogen-silicon compound, and c) removing the metal-halogen-silicon compound from the substrate by volatilization. The process may be used to remove both dispersed metal and bulk metal films or islands.Type: GrantFiled: October 1, 1998Date of Patent: July 4, 2000Assignee: Massachusetts Institute of TechnologyInventors: Herbert H. Sawin, Jane P. Chang, Andrew Scott Lawing, Zhe Zhang, Han Xu
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Patent number: 5620558Abstract: The linewidth in patterns produced by etching copper layers is more easily maintained using a specific etching medium. In particular, this medium includes aqueous hydrofluoric acid, copper chloride, and an additional chloride salt. The etching medium is also particularly useful for bilayer metal constructions such as the copper/titanium structure found in many multichip modules.Type: GrantFiled: March 28, 1994Date of Patent: April 15, 1997Assignee: Lucent Technologies Inc.Inventors: Karrie J. Hanson, Barry Miller, Barbara J. Sapjeta, Akshay V. Shah, Ken M. Takahashi
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Patent number: 5575962Abstract: Optical quality molds and mold inserts include an optically flat substrate, a layer of material applied to the substrate and one or more depressions in a predetermined pattern formed in the layer of material applied to the substrate. The depth of the depressions are precisely determined by the thickness of the layer applied to the substrate. By contacting the mold with resin in a fluid state, a component is fabricated having microfeatures formed monolithically thereon.Type: GrantFiled: December 2, 1994Date of Patent: November 19, 1996Assignee: Lucent Technologies Inc.Inventor: Ken M. Takahashi
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Patent number: 5554254Abstract: A process for preventing the formation of precipitates on a substrate surface after a contact layer (e.g., tungsten layer) etch back. The process involves removing the precursor chemicals of the precipitate. In one embodiment of the invention, the precursors are removed after etching contact layer by rinsing the substrate in water at about 30.degree. C. for about 10 minutes. In a second embodiment of the invention, the precursors are removed by baking the substrate at a temperature of approximately 120.degree. C. for approximately 180 seconds.Type: GrantFiled: March 16, 1995Date of Patent: September 10, 1996Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Yuan-Chang Huang, Kuang-Hui Chang
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Patent number: 5431774Abstract: A dry etch for metals such as copper using .pi.-acids in an energetic environment such as a plasma, laser, or afterglow reactor (102) or by using ligands forming volatiles at low temperature within a pulsed energetic environment.Type: GrantFiled: July 19, 1994Date of Patent: July 11, 1995Assignee: Texas Instruments IncorporatedInventor: Monte A. Douglas