Abstract: There is provided a new and improved master manufacturing method, master, and optical body enabling more consistent production of optical bodies having a desired haze value, the master manufacturing method including: forming a first micro concave-convex structure, in which an average cycle of concavities and convexities is less than or equal to visible light wavelengths, on a surface of a base material body that includes at least a base material; forming an inorganic resist layer on the first micro concave-convex structure; forming, on the inorganic resist layer, an organic resist layer including an organic resist and filler particles distributed throughout the organic resist; and etching the organic resist layer and the inorganic resist layer to thereby superimpose and form on the surface of the base material a macro concave-convex structure and a second micro concave-convex structure.

Abstract: Assemblies, optical connectors, and methods for bonding optical fibers to a substrate using a laser beam are disclosed. In one embodiment, a method of bonding an optical fiber to a substrate includes directing a laser beam into the optical fiber disposed on a surface of the substrate, wherein the optical fiber has a curved surface and the curved surface of the optical fiber focuses the laser beam to a diameter that is smaller than a diameter of the laser beam as it enters the optical fiber. The method further includes melting, using the laser beam, a material of the substrate at a bond area between the optical fiber and the surface of the substrate such that the optical fiber is bonded to the surface of the substrate.

Abstract: A photonic processing module (100) comprises a high index-contrast waveguide device comprising a substrate (102), a first layer (104) disposed on the substrate having a first refractive index, and a relatively thin second layer (106) disposed on the first layer. The second layer has a second refractive index providing a high index-contrast with the first layer, and the device includes at least one thin-ridge waveguide element (108) formed in the second layer which supports a guided mode in a longitudinal direction. An optical input port (110) is configured to direct an input beam into a slab mode of the second layer, the beam being directed to propagate at a predetermined angle ? to the longitudinal direction of the thin-ridge waveguide element. The angle ? is associated with a resonant coupling between the slab mode of the second layer and the guided mode of the thin-ridge waveguide element.

Abstract: Embodiments described herein relate to methods of forming gratings with different slant angles on a substrate and forming gratings with different slant angles on successive substrates using angled etch systems. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ? relative to a surface normal of the substrates and form gratings in the grating material. The substrates are rotated about an axis of the platen resulting in rotation angles ? between the ion beam and a surface normal of the gratings. The gratings have slant angles ?? relative to the surface normal of the substrates. The rotation angles ? selected by an equation ?=cos?1 (tan(??)/tan(?)).

Abstract: Embodiments are directed to a (quasi) one-dimensional photonic crystal cavity. This cavity comprises a set of aligned pillars, where the pillars are embedded in a cladding. At least one of the pillars has a sandwich structure, wherein a layer of nonlinear optical material is between two layers of materials having, each, a refractive index that is higher than the refractive index of the nonlinear optical material. Embodiments can further include an all-optical modulator or an all-optical transistor, comprising a photonic crystal such as described above. Finally, embodiments are further directed to methods for modulating an optical signal, using such a photonic crystal cavity.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A recording head includes a magnetic write transducer proximate a near-field transducer. The magnetic write transduce includes a yoke extending in a direction normal to a media-facing surface and a having an edge facing and recessed from the media-facing surface. A write pole extends beyond the first end of the yoke towards the media-facing surface and overlaps a first surface of the yoke that faces the near-field transducer. The write pole has a stepped edge facing away from the media-facing surface. Two or more coil turns are stacked relative to one another in a down-track direction. The two or more coils face a second surface of the yoke that is opposed to the first surface.

Abstract: Embodiments of the present disclosure are directed toward an optical apparatus that includes a semiconductor layer to propagate light from at least one light source. The optical apparatus may further include a curved echelle grating with a plurality of grating teeth, the echelle grating at an outer side of the semiconductor layer. The curved echelle grating may include a plurality of grating teeth, and a grating tooth of the plurality of grating teeth may have a grating facet and a shadow facet. A shadow facet may have an angle of grating greater than 0 degrees with respect to a normal of a curve of the curved echelle grating. Other embodiments may be described and/or claimed.

Abstract: In an embodiment, a method of planarizing a surface includes applying a first layer to a surface including a protruding region including at least one compound semiconductor and a stop layer on an upper surface such that the first layer covers the surface and the protruding region, removing a portion of the first layer above the protruding region and forming an indentation in the first layer above the protruding region, the protruding region remaining covered by material of the first layer, and progressively removing an outermost surface of the first layer to produce a planarized surface including the stop layer on the upper surface of the protruding region and an outer surface of the first layer.

Abstract: A method of manufacturing a waveguide in a glass plate is disclosed. The glass plate is scanned with a laser beam directed orthogonally to the glass plate to form a trench according to a pattern of the waveguide to be formed. The scanning is performed by pulses of the laser beam having a duration between 2 and 500 femtoseconds. The glass plate with the trench is treated with hydrofluoric acid. After treating the glass plate, the trench is filled with a material having an index different from that of glass, and, after filling the trench, a cladding layer is deposited.

Abstract: In a MEMS device (1), a first drive portion (40) is divided into a first drive section (41) and a second drive section (42). A second drive portion (50) is divided into a third drive section (51) and a fourth drive section (52). The first drive section, the second drive section, the third drive section, and the fourth drive section are controlled for driving independently of each other to incline an optical component (10).

Abstract: A displacement measurement device includes: a light source; a first diffraction grating and a second diffraction grating arranged along a path of light from the light source and movable relative to one another, the first and second diffraction gratings generating diffracted light; an optical sensor that detects interference light produced by interference between ?nth order diffracted light generated as a result of the second diffraction grating diffracting +nth order diffracted light from the first diffraction grating and +nth order diffracted light generated as a result of the second diffraction grating diffracting ?nth order diffracted light from the first diffraction grating, where n is a natural number greater than or equal to 1; and a calculation unit calculating, according to a signal from the optical sensor, a relative displacement between the first and second diffraction gratings in a direction orthogonal to an optical axis of the first and second diffraction gratings.

Abstract: The present invention provides backlight module and manufacturing method thereof, display device comprising backlight module and driving method for driving the display device. The backlight module comprises first substrate and second substrate opposite to each other. Each of the first and second substrates comprises multiple photic areas and shading areas arranged at intervals thereon, and projections of the shading areas of the first substrate on the second substrate completely cover the photic areas of the second substrate. On side of the first substrate opposite to the second substrate, first reflective layers which are bendable are formed on the shading areas thereof, and on side of the second substrate opposite to the first substrate, second reflective layers are formed on the shading areas thereof. The first reflective layers, in a bent state, reflect light to the second reflective layers which then reflect light to the photic areas of the first substrate.

Abstract: Fabricating the mode transformer includes forming a cladding trench in a first light-transmitting medium that is included on a wafer. A lateral cladding is formed in the cladding trench such that the lateral cladding becomes an optical cladding on a lateral side of a first tapered portion of a waveguide. A second light-transmitting medium is formed on the wafer such that a portion of the first light-transmitting medium is between a bottom of the trench and the second light-transmitting medium. The second light-transmitting medium is patterned so as to define a second tapered portion of the waveguide over the first tapered portion of the waveguide.

Abstract: A structured substrate for optical fiber alignment is produced at least in part by forming a substrate with a plurality of buried conductive features and a plurality of top level conductive features. At least one of the plurality of top level conductive features defines a bond pad. A groove is then patterned in the substrate utilizing a portion of the plurality of top level conductive features as an etch mask and one of the plurality of buried conductive features as an etch stop. At least a portion of an optical fiber is placed into the groove.

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.

Abstract: A waveguide for the extraction of light at low levels of reflection arranged to guide light from an electro-optical component on a chip to a facet on the chip for extraction includes a first part and a second part. The first part (4) is extended, the second part (5) includes a surface (JK) through which the light exits from the waveguide (1). A non-adiabatic longitudinal section (GHLM) is located after the first part (4) but before the surface (JK) in the direction of propagation of the light, and the surface (JK) forms in the plane of the chip a first angle (V1) with the optical axis (A) of the first part (4) that lies between 5 and 80 degrees.

Abstract: A graphene wiring structure of an embodiment has a substrate, a metal part on the substrate, multilayered graphene connected to the metal part, a first insulative film on the substrate, and a second insulative film on the substrate. The metal part is present between the first insulative film and the second insulative film. Edges of the multilayered graphene are connected to the metal part. A side face of the first insulative film vertical to the substrate opposes a side face of the second insulative film vertical to the substrate. A first outer face of the multilayered graphene is in physical contact with a first side face of the first insulative film vertical to the substrate. A second outer face of the multilayered graphene is in physical contact with a second side face of the second insulative film vertical to the substrate.

Abstract: A plurality of Bragg gratings are formed at predetermined locations of a laminate including a mounting substrate, a clad layer provided on the mounting substrate and an optical material layer provided on the clad layer. Optical waveguides are formed each including at least each of the Bragg gratings. Masks are formed each covering a region corresponding to each of the grating elements on the optical material layer. The optical material layer and clad layer are etched to shape an end face of each of the grating elements.

Abstract: A method for manufacturing at least one stamp may include preparing a mold that includes mold protrusions, wherein the mold protrusions extend parallel to each other in a plan view of the mold and include a first mold protrusion. The method may further include providing resin on the mold, wherein the resin partially covers the mold protrusions without completely covering the mold protrusions, and wherein a side of the resin is at an angle with respect to the first mold protrusion in a plan view of a structure that includes the mold and the resin. The method may further include curing the resin to form cured resin. The method may further include forming a stamp that includes the cured resin.

Abstract: A plasmonic device having a transparent conducting oxide (TCO) waveguide and a tunable voltage applied across the TCO and a metal layer for modulating an input optical signal.

Abstract: A method for fabricating a holographic blazed grating is provided. The method includes: coating a photoresist layer on a substrate; performing lithography on the photoresist layer to form a photoresist grating; performing vertical ion beam etching on the substrate by using the photoresist grating as a mask, to form a homogeneous grating by transferring a pattern of the photoresist grating onto the substrate; cleaning the substrate to remove remaining photoresist; performing tilted Ar ion beam scanning etching on the substrate by using the homogeneous grating as a mask, and etching different portions of the substrate by utilizing a obscuring effect of the homogeneous grating mask on the ion beam, to form a triangular groove shape of the blazed grating; and cleaning the substrate to obtain the holographic blazed grating.

Abstract: The invention concerns to a method of producing a Fresnel Zone Plate (1) for applications in high energy radiation including the following steps: supply of a substrate (2) transparent for high energy radiation, deposition of a layer (3) of a metal, a metal alloy or a metal compound on a planar surface (4) of the substrate (2), calculating a three dimensional geometrical profile (5) with a mathematical model, setting up a dosage profile (6) for an ion beam of the ion beam lithography inverse to the calculated three dimensional geometrical profile (5) and milling a three dimensional geometrical profile (5) with concentric zones into the layer (3) with ion beam lithography by means of focused ion beam.

Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.

Abstract: The invention relates to an active probe for near-field optical microscopy, characterized in that it includes a metal or metallized tip (PM) at the apex of which a nanoscale body (NB) is located, the body having a polymer matrix capable of, or containing a host (MH) capable of, emitting under illumination, light (SH) at a wavelength different from that of the illumination. A process for manufacturing such a probe is also provided.

Abstract: A method for adjusting the properties of a photonic circuit such that they fit with expected properties, the photonic circuit including a waveguide which includes a light propagation region, is provided. The method includes a step of modifying the refractive index of at least one zone of the region, the step being implemented by an ion implantation in the at least one zone. It extends to a waveguide the light propagation region of which has at least one zone with a refractive index modified by ion implantation in which the light remains confined, as well as a photonic circuit incorporating such a guide.

Abstract: A light emitting diode device (LED) is provided. The LED comprises a first-doped layer on a substrate, an active layer on the first-doped layer, a second-doped layer on the active layer, and a metal layer on the second-doped layer. The second-doped layer is patterned on a surface opposite to the active layer to define a first portion and a second portion. The first portion of the second-doped layer has a first portion thickness constrained for electron-hole pairs in the active layer to couple efficiently to a surface plasmon mode at an interface of the metal layer and the second-doped layer thereby increasing the spontaneous emission rate of the LED. The second portion of the second-doped layer has a second portion thickness sufficient to ensure formation of a p-n junction in the LED.

Abstract: An optical connector connects: N (N is an integer of 3 to 14) single-mode fibers each including one core with a high refractive index in a cladding material with a low refractive index; to multi-core fiber including N cores with high refractive indexes in a cladding material with low refractive index such that the cores of the single-mode fibers are respectively optically coupled to cores of the multi-core fiber. The optical connector includes: quartz glass cylinder having a first end face to be in contact with the multi-core fiber and a second end face to be in contact with single-mode fibers; N glass fibers that are arranged in the quartz glass cylinder to extend from the first to second end face, the N glass fibers each including: a circular rod with high refractive index that has a constant outer diameter; and a low refractive index material that surrounds an outer periphery of the circular rod and has a constant thickness.

Abstract: A system is presented. The system includes an absorption cell filled-with a gas-mixture, a mirror-cum-window comprising a first portion that acts as a first mirror and a second portion that acts as a first window, a second mirror, a plurality of radiation sources to generate a plurality of light beams directed into the absorption cell through the first window followed by reflection of the plurality of light beams between the first mirror and the second mirror to irradiate the gas-mixture resulting in generation of a plurality of transmitted light beams passing out of the absorption cell through the second window, a detector that detects at least one characteristic of the plurality of transmitted light beams resulting in generation of one or more response signals, and a processing subsystem that analyzes the gas-mixture at least based on the one or more response signals.

Abstract: A signal transmission line is disclosed. The signal transmission line includes a dielectric substrate, a signal line formed on a first surface of the dielectric substrate, a first conductive layer formed on a second surface of the dielectric substrate, and a first stub formed on the first surface of the dielectric substrate, the first stub being electrically connected with the signal line. The first stub includes a plurality of straight areas each extending from a different position of the signal line, a conductor part extending in parallel with the signal line, the conductor part being electrically connected with straight areas, a projection part connected with the conductor part, the projection part extending from the conductor part, and an opening provided between the conductor part and the signal line.

Abstract: Provided is a method for manufacturing an optical element from glass after polishing and in which either or both of a cleaning liquid used in a cleaning step for the glass after polishing and a rinsing liquid used in a rinsing step after the cleaning step are a liquid that inhibits expansion of cracked parts present on the surface of the glass after polishing.

Abstract: A radiation-sensitive detector array (100) including a first side (120), a second side (110) in opposed relation to the first side, and a detector substrate (130) positioned between the first and second sides is presented. The first side is constructed as a non-planar or uneven shape. The first side is a cathode and the second side is an anode. The cathode may be a field emission cathode (FEC) and the detector substrate may be a Cadmium Zinc Telluride (CZT) detector substrate. The non-planar or uneven shape may be a series of equally spaced apart protrusions, each of the protrusions being a pyramidal construction including a peak, the peak adapted and dimensioned to cause electric field lines to focus or converge thereon.

Abstract: An apparatus for generating an image may include a plurality of scintillator layers configured to convert an incident beam into an optical signal; a plurality of micro cells configured to turn on or off depending on whether or not the micro cells detect the optical signal; a reaction depth determining unit configured to detect a decay pattern of the optical signal, on the basis of on/off signals of the micro cells, and configured to determine a type of the scintillator layers with which the incident beam has reacted; and/or a reading unit configured to decide an occurrence location of the incident beam and then generates a photographed image.

Abstract: A direct view optical sight including an integrated laser rangefinder. One example of the sight includes an eyepiece, an objective providing an optical aperture and configured to direct electromagnetic radiation from a viewed scene to the eyepiece, an erector tube assembly coupled between the eyepiece and the objective, the laser rangefinder configured to transmit and receive laser radiation, and a beam combiner assembly mounted to the erector tube assembly and positioned between the erector tube assembly and the objective, the beam combiner assembly configured to combine the laser radiation and the electromagnetic radiation to allow the laser rangefinder to transmit and receive the laser radiation via the optical aperture of the objective, and to maintain optical alignment of the laser rangefinder and the viewed scene during movement of the erector tube assembly.

Abstract: This disclosure relates to a method for manufacturing a color filter being capable of suppressing a surface of a colored pattern from being rough in a planarization treatment, a color filter and a solid-state imaging device.

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

Abstract: An optical device is formed from a device precursor having a layer of a light-transmitting medium on a base. A first feature is formed on the device precursor. The device precursor is then processed such that a stop layer protects the first feature and a portion of the device precursor is above the top of the stop layer. The first feature is between the base and the stop layer. The device precursor is planarized such that the portion of the device precursor located above the top of the stop layer becomes flush with the top of the portion of the stop layer that is present on the device precursor after the planarization. During the planarization, the stop layer acts as a planarization stop that slows or stops the rate of planarization.

Abstract: A method for fabricating a wire grid polarizer according to an embodiment comprises: forming a conductive layer on a substrate; forming a guide layer on the conductive layer; forming a hard mask pattern to partially expose the guide layer; forming a guide pattern to partially expose the conductive layer; providing a block copolymer of two monomers having different etching rates; forming two sets of monomer blocks by aligning the block copolymer; selectively removing one set of monomer blocks; and forming a conductive wire pattern using the remaining set of monomer blocks and the guide pattern as etching masks. A width of an upper end of the guide pattern adjacent to the hard mask pattern is smaller than a width of a lower end adjacent to the conductive layer. The width of the upper end of the guide pattern is smaller than a width of the hard mask pattern.

Abstract: A radiation curable liquid coating composition comprising 1 to 90 wt % of at least one multifunctional (meth)acrylated oligomer; 10 to 80 wt % of at least one C8 to C20 monofunctional aliphatic alkyl (meth)acrylate; 0 to 40 wt % of at least one monomeric reactive diluent wherein (a)+(b)+(c)=100%; and additionally comprising 0.1 to 15 wt % of matting agent by weight of the coating composition.

Abstract: Sensing apparatus, consisting of a housing, including a medium having an elastic, transparent outer surface configured to contact a tissue within a living body and to deform in response to a force exerted by the body tissue on the surface. The apparatus has a radiation source contained in the housing and configured to direct radiation toward the surface, as well as a radiation detector contained in the housing and configured to sense the radiation that is reflected from the surface and to output a signal indicative of an amplitude of the reflected radiation. The apparatus further has a processor, which is coupled to measure a change in the signal due to deformation of the surface and, responsively to the change, to output an indication of the force.

Abstract: The present disclosure relates to a method for manufacturing a color filter being capable of suppressing residue from being generated on a colored layer planarized by a planarization treatment, a color filter, and a solid-state imaging device.

Abstract: A method of fabricating a silicon photonic device and a system including a silicon photonic device are described. The method includes forming a photoresist layer on a silicon layer and patterning a mask formed on the photoresist layer. The patterning defines a primary optical waveguide region, a first evanescent perturbation grating region on a first side of the primary optical waveguide region and a second evanescent perturbation grating region on a second side, opposite the first side, of the primary optical waveguide. The first evanescent perturbation grating region and the second evanescent perturbation grating region are defined as continuous regions along a length of the silicon photonic device. The method also includes etching the photoresist layer and the silicon layer according to a pattern of the patterned mask.

Abstract: A semiconductor light-emitting device includes a semiconductor structure having a light-emitting region. A surface of the semiconductor structure has flattened peaks.

Abstract: A manufacture method for a blazed concave grating is provided, including: replicating a blazed concave grating by means of a replication process, after the replication is completed, conducting heat preservation and cooling, then separating two gratings (G1, G2) by using different pulling manners respectively, and finally splicing the replicated and separated concave grating blanks, to obtain a required blazed concave grating. This manufacture method can solve the problem of a big error in an existing replication method for a blazed concave grating.

Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.

Abstract: Embodiments disclosed herein generally relate to a method for forming a HAMR head. The method includes depositing a drop-on-demand mask on a portion of a surface of a slider using a drop-on-demand tool. The surface of the slider includes at least a portion of an NFT. A first protective layer is deposited over a remaining portion of the surface of the slider and over the drop-on-demand mask. The drop-on-demand mask and a portion of the first protective layer disposed on the drop-on-demand mask are removed, exposing at least the portion of the NFT. A second protective layer is deposited on the first protective layer and at least the exposed portion of the NFT. By using the drop-on-demand tool to deposit the drop-on-demand mask, the alignment between the drop-on-demand mask and the portion of the NFT is less stringent, and the drop-on-demand mask can be easily removed using a wiping tool.

Abstract: A novel blazed grating spectral filter disclosed herein includes a multilayer stack of materials that is formed on a wedge-shaped substrate wherein the upper surface of the substrate is oriented at an angle relative the bottom surface of the substrate and wherein the angle corresponds to the blaze angle of the blazed grating filter. Various methods of forming such a filter are also disclosed such as, for example, performing a planarization process in a CMP tool to define the wedge-shaped substrate, thereafter forming the multilayer stack of materials above the upper planarized surface of the substrate and etching recesses into the multilayer stack.

Abstract: A semiconductor structure is provided in which a plurality of waveguide structures are embedded within a semiconductor handle substrate. Each waveguide structure includes, from bottom to top, a bottom oxide portion, a waveguide core material portion and a top oxide portion. An oxide capping layer is present on topmost surfaces of each waveguide structure and a topmost surface of the semiconductor handle substrate. A plurality of semiconductor devices is located above a topmost surface of the oxide capping layer. The structure has thicker buried oxide regions defined by the combined thicknesses of the top oxide portion and the oxide capping layer located in some areas, while thinner buried oxide regions defined only by the thickness of the oxide capping layer are present in other areas of the structure.

Abstract: A manufacturing method of a reflective polarizer includes forming a metal layer on a first substrate; forming a mask layer divided into an opening area and a non-opening area on the metal layer, and having grooves patterned in the opening area, the groove exposing the metal layer; increasing hydrophobicity of a surface by treating the mask layer using a silane coupling agent; inducing phase separation of a hydrophilic component and a hydrophobic component of a block copolymer after filling the grooves of the mask layer with the block copolymer; selectively removing the hydrophilic component or the hydrophobic component block copolymer of the block copolymer; and etching the metal layer using the block copolymer as a mask.