Lens Patents (Class 216/26)
  • Patent number: 5718830
    Abstract: A method for making a microlens comprising the steps of uniformly distributing a volume of Poly(methylmethacrylate) (PMMA) across a major surface of a substrate, hardening the PMMA layer on the substrate surface, patterning the PMMA layer and forming patterned PMMA and reflowing the patterned PMMA to form at least one microlens on the substrate.
    Type: Grant
    Filed: February 15, 1996
    Date of Patent: February 17, 1998
    Assignee: Lucent Technologies Inc.
    Inventors: Charles George Hlinka, Janet Louise Markham, Casimir Roman Nijander, Keith Owen Mersereau, Yiu-Huen Wong
  • Patent number: 5711890
    Abstract: A method of making an imager includes the following steps: providing a semiconductor substrate having a top surface; providing a plurality of spaced image pixels h the substrate, thereby forming a semiconductor portion; and depositing a first transparent substantially inorganic support layer over the semiconductor portion. The method further includes the following steps: making the inorganic support layer optically planar by chemical mechanical polishing, thereby forming an optically flat top surface; forming a plurality of depressions in the optically flat top surface; uniformly depositing a substantially inorganic lens material on the optically flat top surface, entirely filling the depressions; and making the substantially inorganic lens material optically planar by chemical mechanical polishing, thereby forming an optically planar lens surface.
    Type: Grant
    Filed: March 11, 1996
    Date of Patent: January 27, 1998
    Assignee: Eastman Kodak Company
    Inventors: Gilbert Alan Hawkins, Madhav Mehra, Christopher Parks
  • Patent number: 5691116
    Abstract: A method for forming lenslets which collect light and focus the light onto photosensitive elements of an electronic imager. The method includes providing a transparent lenslet-forming layer on a substrate or on layers on the substrate, forming a thin etch-stop layer on the transparent lenslet-forming layer and patterning a thin photosensitive resin mask on the etch-stop layer so that the mask pattern corresponds to lenslets to be formed. The method further includes transferring by etching the pattern of the photosensitive resin mask to the thin etch-stop layer to form a thin etch-stop mask, anisotropically plasma etching the transparent lenslet-forming layer according to the patterned thin etch-stop mask, removing the thin etch-stop mask, and thermally reflowing the etched transparent lenslet-forming layer to form the lenslets.
    Type: Grant
    Filed: September 20, 1996
    Date of Patent: November 25, 1997
    Assignee: Eastman Kodak Company
    Inventors: Joseph F. Revelli, Jeffrey I. Hirsh, Joseph Jech, Douglas R. Robello, Stephen P. Barry, Alan C. G. Nutt
  • Patent number: 5672519
    Abstract: This invention relates to microlenses of the solid state image sensing element and the method for fabricating the microlenses of the solid image sensing elements, which provides a solid state image sensing element including a substrate, photo diode areas each having a plurality of photo diodes in matrix array formed on the substrate, a flat area formed over the substrate including the photo diode areas, color filter layers formed in predetermined areas on the flat area, a top coating layer formed over the substrate including the color filter areas, stripe microlenses each having a flat upper surface arranged correspond corresponding to the photo diodes arranged in one direction in the photo diode areas and formed on the top coating layer, and mosaic microlenses formed on the flat upper surface of the stripe microlens each arranged corresponding to each of the photo diodes in the photo diode area.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: September 30, 1997
    Assignee: LG Semicon Co., Ltd.
    Inventors: Kwang Bok Song, Sung Ki Kim, Jin Sub Shim
  • Patent number: 5670384
    Abstract: Microlenses are formed on a solid state imager comprising a substrate having planar radiation-sensitive regions and upstanding electrode regions by forming a conformal layer of a first, low refractive index material on the substrate, and forming a planarized layer of a second, higher refractive index material on top of the layer of first material. The portions of the second material extending down between the upstanding electrode regions act as microlenses deflecting light which would otherwise fall on the radiation-insensitive electrode regions on to the radiation-sensitive regions, thus improving the quantum efficiency of the imager.
    Type: Grant
    Filed: September 26, 1995
    Date of Patent: September 23, 1997
    Assignee: Polaroid Corporation
    Inventor: Christopher R. Needham
  • Patent number: 5605783
    Abstract: A method for forming lenslets which collect light and focuses it onto photosensitive elements of an electronic imager includes providing a transparent lenslet-forming layer on a substrate or on layers on the substrate and forming a thin etch-stop layer on the transparent lenslet-forming layer and patterning the etch-stop layer so that the mask pattern corresponds to lenslets to be formed, The method further includes anisotropically plasma etching the transparent lenslet-forming layer according to the thin etch-stop mask pattern, removing the thin etch-stop mask, and thermally reflowing the patterned transparent layer to form the transparent lenslets.
    Type: Grant
    Filed: January 6, 1995
    Date of Patent: February 25, 1997
    Assignee: Eastman Kodak Company
    Inventors: Joseph F. Revelli, Jeffrey I. Hirsh, Joseph Jech, Douglas R. Robello, Stephen P. Barry, Alan C. G. Nutt
  • Patent number: 5562839
    Abstract: A low-cost, high performance 1.times.N fiber optic coupler where N>16 is presented. The coupler has a GRIN lens having an first optic fiber aligned with the optical axis of the lens at one end of the lens. The first optic fiber ends in a microlens. At the other end of the GRIN lens a bundle of tapered second optic fibers is centered on the optical axis of the lens.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: October 8, 1996
    Assignee: E-Tek Dynamics, Inc.
    Inventor: Jing-Jong Pan
  • Patent number: 5534371
    Abstract: A repaired laser ablation mask is disclosed capable of withstanding laser fluences in the range from about 200 mJ/cm.sup.2 to at least 500 mJ/cm.sup.2. The repaired mask comprises a single or multiple layers of apertured metal, such as, aluminum, on a quartz substrate. The laser mask repair technique and structure are also disclosed. The thickness of the metal layer, such as, aluminum layer, is in the range from about 2 microns to about 6 microns. A laser projection etching technique is also disclosed for using the repaired ablation mask.
    Type: Grant
    Filed: May 22, 1995
    Date of Patent: July 9, 1996
    Assignee: International Business Machines Corporation
    Inventors: Rajesh S. Patel, Laertis Economikos
  • Patent number: 5518863
    Abstract: The multifiber fiber-optic element for use in image transfer comprises a large number of packed optic fibers cemented together at least at the ends, and microlenses formed on at least one of the two end facets of the fibers, whereby the optical invariant of the element can be changed by said microlenses. A method for providing the microlenses light redistributing structures is also disclosed.
    Type: Grant
    Filed: July 5, 1994
    Date of Patent: May 21, 1996
    Assignee: Institut National D'Optique
    Inventor: Romuald Pawluczyk
  • Patent number: 5441836
    Abstract: A laser ablation mask repair method. Defects (holes) are located in a dielectric mask. The surface of the mask above the defect is melted with a CO.sub.2 laser to form a depression in the surface. The depression forms a lens which diffuses ablation laser energy instead of transmitting it. Thus, the ablation laser is prevented from ablating a polymer ablation layer, because the holes are blocked and, the mask is repaired. The method may also be used to make Engineering Changes (EC) laser ablation masks.
    Type: Grant
    Filed: March 30, 1994
    Date of Patent: August 15, 1995
    Assignee: International Business Machines Corporation
    Inventors: James G. Balz, John R. Lankard, Sr., Mark J. LaPlante