Abstract: A hollow cathode plasma enhanced chemical vapor deposition process for depositing a hydrophobic carbon based coating on a fabric substrate.

Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.

Abstract: A method of manufacturing a quartz crystal element includes preparing a quartz crystal wafer having a predetermined cutting angle with respect to a crystal axis of a quartz crystal, forming a first resist film having a first tilted part on a first surface of the quartz crystal wafer and dry-etching the first resist film with the quartz crystal, forming a first tilted surface by dry-etching the quartz crystal wafer from the first surface side, forming a second resist film having a second tilted part on a second surface of the quartz crystal wafer and dry-etching the second resist film with the quartz crystal, and forming a second tilted surface tilted by dry-etching the quartz crystal wafer from the second surface side. The quartz crystal element provided with the first tilted surface and the second tilted surface, and having a cutting angle different from the predetermined cutting angle is formed.

Abstract: A laser micro-machining process called laser-assisted material phase-change and expulsion (LAMPE) micromachining that includes cutting features in a cutting surface of a piece of material using a pulsed laser with intensity, pulse width and pulse rate set to melt and eject liquid material without vaporizing said material, or, in the case of silicon, create an ejectible silicon oxide. Burrs are removed from the cutting surface by electro-polishing the cutting surface with a dilute acid solution using an electric potential higher than a normal electro-polishing electric potential. A multi-lamina assembly of laser-micro-machined laminates (MALL) may utilize MEMS. In the MALL process, first, the individual layers of a micro-electromechanical system (MEMS) are fabricated using the LAMPE micro-machining process. Next, the fabricated microstructure laminates are stack assembled and bonded to fabricate MEM systems.

Abstract: A method of forming a semiconductor device includes removing a light-sensitive material from a workpiece utilizing polarized electromagnetic radiation and annealing features on the workpiece utilizing electromagnetic radiation polarized in a different direction than the polarized electromagnetic radiation utilized to remove the light-sensitive material. In some embodiments, the electromagnetic radiation used to anneal the features on the workpiece is not polarized. In some described embodiments, light-sensitive material removed from the workpiece is exhausted from the chamber in which the light-sensitive removal process is carried out before it can deposit on surfaces of the chamber.

Abstract: A method for depositing carbon on a substrate in a processing chamber includes arranging the substrate on a substrate support in the processing chamber. The substrate includes a carbon film having a first thickness formed on at least one underlying layer of the substrate. The method further includes performing a first etching step to etch the substrate to form features on the substrate, remove portions of the carbon film, and decrease the first thickness of the carbon film, selectively depositing carbon onto remaining portions of the carbon film, and performing at least one second etching step to etch the substrate to complete the forming of the features on the substrate.

Abstract: The present invention relates to a method for analyzing samples comprising spermatozoa, said method comprising the use of a flow-through counting compartment, wherein the time period between the end of loading and closing is carried out in a controlled and specified time period. The present invention further relates to a counting compartment or chamber suitable for said method and to a counting device comprising said counting compartment.

Abstract: A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched (12) including an etching target being a target of etching with the etching gas to etch the etching target without using plasma. The etching target contains copper. Additionally, the dry etching step is performed under temperature conditions of from 140° C. to 300° C. Also disclosed is a method for manufacturing a semiconductor element and a cleaning method using the dry etching method.

Abstract: A method for recovering ashing rate in a plasma processing chamber includes positioning a substrate in a processing volume of a processing chamber, wherein the substrate has a silicon chloride residue formed thereon. The method further includes evaporating the silicon chloride residue from the substrate. The method further includes depositing the evaporated silicon chloride on one or more interior surfaces in the processing volume. The method further includes exposing the deposited silicon chloride to an oxidizing environment to convert the deposited silicon chloride to a silicon oxide passivation layer. The oxidizing environment can comprise an oxygen-containing plasma, oxygen radicals, or a combination thereof.

Abstract: An apparatus such as a device having a writer for magnetic media has a trailing pole piece having a portion adjacent a write gap, the portion having a throat height (h1) of between about 100 and about 800 nm, and an aspect ratio of thickness/throat height (t1/h1) in a range of 0.5 and 2.

Abstract: A process for obtaining a decorative mirror includes reflective regions forming a pattern and non-reflective regions, the process including providing a sheet of soda-lime-silica glass coated with a reflective coating on the entirety of one of the faces thereof, then applying a composition including a phosphate salt to the reflective coating, solely in application regions, the application regions being intended to become the non-reflective regions, then tempering the glass sheet, in which the glass sheet is subjected to a temperature of at least 550° C., causing the reflective coating to dissolve in the application regions so as to form the non-reflective regions in which the glass sheet is not coated.

Abstract: An inductor built-in substrate includes a core substrate having openings and first through holes formed therein, a magnetic resin filling the openings and having second through holes formed therein, first through-hole conductors formed in the first through holes respectively such that each of the first through-hole conductors includes an electroless plating film and an electrolytic plating film, and second through-hole conductors formed in the second through holes respectively such that each of the second through-hole conductors includes an electroless plating film and an electrolytic plating film. The first through-hole conductors and the second through-hole conductors are formed such that a thickness of the electroless plating film in the first through-hole conductors is larger than a thickness of the electroless plating film in the second through-hole conductors.

Abstract: An imprint method includes supplying a first photocurable resist to a first region of an object; irradiating the first resist with first light; forming a second resist over the object; bringing a template into contact with the second resist; and irradiating at least the second resist with second light through the template while the template is in contact with the second resist.

Abstract: Methods are provided for planarizing a patterned substrate in a spatial atomic layer processing system comprising a rotating platen. The patterned substrate may generally include features having higher regions and lower regions. To planarize the patterned substrate, or reduce a height differential between the higher and lower regions, a selective atomic layer etching (ALE) process is disclosed to preferentially form a modified layer on the higher regions of the features by exposing a surface of the patterned substrate to a precursor gas while the rotating platen spins at a high rotational speed. By preferentially forming the modified layer on the higher regions of the features, and subsequently removing the modified layer, the selective ALE process described herein preferentially etches the higher regions of the features to lessen the height differential between the higher and lower regions until a desired planarization of the features is achieved.

Abstract: Provided is a method for manufacturing a component provided with a decoration by laser light. The method includes sequentially irradiating a target region in a surface of the component with laser light so as to draw decorative patterns in an overlaid manner, each decorative pattern being composed of a plurality of lines.

Abstract: In order to realize a light absorber wherein the wavelengths absorbed can be adjusted, an embodiment of the present invention provides a light absorber 100 provided with a group of dielectric protrusions 102, a conductive thin film 104, and a conductive thick film 108. The group of dielectric protrusions has each dielectric protrusion protruding at a random position on a dielectric surface. A dielectric thin film is disposed on or above at least part of the surface of the dielectric protrusions and on or above at least part of the dielectric surface where the dielectric protrusions are not present; and the dielectric thick film spreads out along the dielectric surface and being kept separate from the dielectric thin film. The group of dielectric protrusions can be provided by disposition of dielectric particles in an in-plane random arrangement on the surface.

Abstract: Described are techniques for applying a cured polymeric blanket coating onto a surface, specifically for applying a blanket-coated cured polymeric coating onto a surface of a substrate that is useful as an electrostatic chuck for processing semiconductor wafers.

Abstract: Electronic substrates, contact pads for electronic substrates, and related methods are disclosed. Electronic substrates may include an electrically conductive layer that forms at least one contact pad and at least one metal trace on a non-conductive layer. The contact pads are arranged with greater thicknesses or heights above the non-conductive layer than the metal traces. Dielectric layers are disclosed that cover the metal traces while leaving top surfaces of the contact pads exposed. Top surfaces of the dielectric layers may be arranged to be coplanar with top surfaces of the contact pads to provide electronic substrates having generally planar top faces. Bottom faces of electronic substrates may include mounting pads that are coplanar with additional dielectric layers. Methods are disclosed that include forming dielectric layers to cover contact pads and metal traces, and removing surface portions of the dielectric layers until the contact pads are accessible through the dielectric layers.

Abstract: A molding apparatus for molding a composition on a substrate using a mold includes a moving unit configured to hold and move the substrate and a gaseous matter supplying unit configured to supply gaseous matter. The gaseous matter supplying unit includes a supply port arranged in a periphery of the substrate held by the moving unit, and supplies the gaseous matter from the supply port while the moving unit is moving the substrate after the composite is supplied to the molding area in the periphery of the substrate.

Abstract: In an exemplary embodiment, a coil component includes: an element body part 10 and a coil 30 of spiral shape constituted by multiple turn units 32 connected in a coil axial direction; wherein each turn unit 32 has, in a cross-sectional view in the width direction of the turn unit 32, a flat side 40 that extends in a second direction substantially perpendicular to the coil axis of the coil 30; and the point of intersection 48 between a figure line 42 corresponding to the longest part in a first direction, and a figure line 44 corresponding to the longest part in the second direction, with respect to the coil axis, is positioned on the figure line 42 within one-quarter of the figure line away from one end 50 on the side 40 or from the other end 52 opposing the side 40.

Abstract: A method for the production of a metal strip is provided. The method includes providing an amorphous metal strip having a first main surface and a second, opposing main surface. The first and/or the second main surface are treated with a wet-chemical etching process and/or a photochemical etching process.

Abstract: A radiation sensitive composition including a siloxane polymer exhibiting phenoplast crosslinking reactivity as a base resin, which is excellent in resolution and can be used as a radiation sensitive composition capable of allowing a pattern having a desired-shape to be formed with sufficient precision. A radiation sensitive composition including as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof; and a photoacid generator, in which the hydrolyzable silane includes hydrolyzable silanes of Formula (1) R1aR2bSi(R3)4-(a+b)??Formula (1) wherein R1 is an organic group of Formula (1-2) and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R3 is a hydrolyzable group; and Formula (2) R7cR8dSi(R9)4-(c+d)??Formula (2) wherein R7 is an organic group of Formula (2-1) and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R9 is a hydrolyzable group.

Abstract: This application relates to a part for a portable electronic device. The part includes a titanium alloy substrate including a network of branching channels. The branching channels include a first channel and a second channel, where the first channel is defined by a first channel wall that extends away from a first opening in the exterior surface, and the second channel is defined by a second channel wall that extends away from a second opening in the first channel wall.

Abstract: A system is disclosed for additively manufacturing a composite structure. The system may include a print head configured to discharge a continuous reinforcement that is at least partially coated in a matrix, and a compactor configured to compact the continuous reinforcement and the matrix. The system may also include a cure enhancer configured to direct a path of cure energy toward the matrix after discharge, wherein the path of cure energy passes through at least a portion of the compactor.

Abstract: A pattern is formed by (i) applying a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) an organic solvent, and (D) a polyvinyl alcohol or polyvinyl alkyl ether onto a substrate to form a resist film thereon, (ii) exposing the resist film to radiation, and (iii) dry etching the resist film with an oxygen-containing gas for development. Using the chemically amplified positive resist composition, a positive pattern is formed via dry development without a need for silylation.

Abstract: Provided is a mask blank for a phase shift mask having an etching stopper film, which satisfies the characteristics: higher durability to dry etching with fluorine-based gas that is used during the shift pattern formation as compared to that of a transparent substrate; high resistance to chemical cleaning; and high transmittance of exposure light. The mask blank includes a light shielding film on a main surface of a transparent substrate, having a structure where an etching stopper film, a phase shift film, and a light shielding film are laminated in this order on the transparent substrate; wherein the phase shift film includes a material containing silicon and oxygen; and the etching stopper film includes a material containing silicon, aluminum, and oxygen.

Abstract: A system (1) for constructing a component, contains a trough (13) with an at least partly transparent base (23), an at least partly stretchable semipermeable layer (7), for receiving a photosensitive substance (5), and a phase (9) arranged below the semipermeable layer (7) and forms an intermediate layer (11) within the photosensitive substance (5). A light source (25) is below the trough base (23) for curing the photoreactive substance (5) in some regions. A construction platform (31) is above the semipermeable layer (7) and can be lifted and lowered for receiving the component (3), as well as with a driver (15) which extends from the semipermeable layer (7) in the direction of the construction platform (31) and can be moved relative to the trough base (23) to convey the photoreactive substance (5) into a gap (20) between the construction platform (31) and the semipermeable layer (7).

Abstract: [Solving Means] An information processing apparatus to be used for a modeling apparatus including a stage, a regulation member, an irradiation unit, and a moving mechanism and includes an acquisition unit, an irradiation position control unit, and a compensation unit. The acquisition unit is configured to acquire the plurality of slice image data items. The irradiation position control unit is configured to variably control, in accordance with the number of laminated layers of a material, an irradiation position of the energy ray to the material in a direction of relative movement of the stage and the regulation member within a modeling surface of the stage. The compensation unit is configured to compensate for a reference position of at least one slice image data item of the plurality of slice image data items in accordance with a change of the irradiation position.

Abstract: A method of making microstructures, including: setting a photoresist layer on a base; covering the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate includes: a substrate; a carbon nanotube layer on the substrate; a patterned chrome layer on the carbon nanotube layer so that the carbon nanotube layer is sandwiched between the patterned chrome layer and the substrate, wherein a first pattern of the patterned chrome layer is the same as a second pattern of the carbon nanotube layer; a cover layer on the patterned chrome layer; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; and developing the exposed photoresist layer to obtain a patterned photoresist microstructures.

Abstract: A method of making microstructures, including: setting a photoresist layer on a surface of a base; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate includes: a substrate; a patterned chrome layer on a surface of the substrate; a carbon nanotube layer on the patterned chrome layer, wherein a first pattern of the patterned chrome layer is the same as a second pattern of the carbon nanotube layer; a cover layer on the carbon nanotube layer; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; and developing the exposed photoresist layer to obtain a patterned photoresist microstructures.

Abstract: A method of making microstructures, including: setting a photoresist layer on a surface of a base; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate includes: a substrate; a carbon nanotube composite structure on a surface of the substrate, wherein the carbon nanotube composite structure includes a carbon nanotube layer and a chrome layer coated on the carbon nanotube layer; and a cover layer on the carbon nanotube composite structure; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; and developing the exposed photoresist layer to obtain a patterned photoresist microstructures.

Abstract: Method of forming a pattern by arranging a photocurable composition on a substrate; bringing a mold having a concavo-convex pattern into contact with the composition; irradiating the composition with light to form a cured film; releasing the mold from the cured film; forming a reversal layer on the cured film having a concavo-convex pattern transferred from the mold; partially removing the reversal layer to expose the convexes of the pattern in such a manner that the reversal layer remains in the concaves of the pattern formed on the cured film; and etching the photocurable composition layer using the reversal layer remaining in the concaves as a mask to form a reversal pattern, wherein the mold is brought into contact with the photocurable composition in an atmosphere of a soluble gas having a solubility in the composition; and the soluble gas has a saturation solubility of 38% by volume or more.

Abstract: A tack device for holding plaque against blood vessel walls in treating atherosclerotic occlusive disease can be formed as a thin, annular band of durable, flexible material. The tack device may also have a plurality of barbs or anchoring points on its outer annular periphery. The annular band can have a length in the axial direction of the blood vessel walls that is about equal to or less than its diameter as installed in the blood vessel. A preferred method is to perform angioplasty with a drug eluting balloon as a first step, and if there is any dissection to the blood vessel caused by the balloon angioplasty, one or more tack devices may be installed to tack down the dissected area of the blood vessel surface.

Abstract: Methods and systems herein enable selective removal of ruthenium (Ru) metal at high throughput, and without potentially damaging effects of plasma. Techniques include a photo-assisted chemical vapor etch (PCVE) method to selectively remove Ru metal as a volatile species. A substrate with ruthenium surfaces is positioned within a processing chamber. A photo-oxidizer is received in vapor form in the processing chamber. The photo-oxidizer is a species that generates reactive oxygen species in response to actinic radiation. Reactive oxygen species are then generated by irradiation of the photo-oxidizer, such as with ultraviolet radiation. The reactive oxygen species react with ruthenium surfaces causing the ruthenium surfaces to become oxidized. Oxidized ruthenium is then removed from the substrate, such as be vaporization.

Abstract: A photolithography mask plate, the photolithography mask plate including: a substrate; a carbon nanotube composite structure on a surface of the substrate, wherein the carbon nanotube composite structure comprises a carbon nanotube layer and a chrome layer coated on the carbon nanotube layer; a cover layer on the carbon nanotube composite structure.

Abstract: A photolithography mask plate, the photolithography mask plate including: a substrate; a carbon nanotube layer located on the substrate; a patterned chrome layer located on the carbon nanotube layer, wherein the patterned chrome layer and the carbon nanotube layer have the same pattern; a cover layer located on the patterned chrome layer.

Abstract: A photolithography mask plate, the photolithography mask plate including: a substrate; a carbon nanotube layer on the substrate; a patterned chrome layer on the carbon nanotube layer, wherein the patterned chrome layer and the carbon nanotube layer have the same pattern; a cover layer on the patterned chrome layer.

Abstract: A method for fabricating a light emitting body protection glass for a quantum dot (QD) display is disclosed, which fabricates a quantum dot (QD) hole having a minimum difference in width between a top surface and a bottom surface of the glass.

Abstract: An endoprosthesis includes an expandable tubular framework having a first end, a second end, and a lumen extending therethrough along a longitudinal axis. The expandable tubular framework includes a plurality of interconnected struts. The interconnected struts include a radially outward face which includes a plurality of anti-migration grooves defining anti-migration teeth formed therebetween. The anti-migration teeth are configured to engage tissue to resist migration of the endoprosthesis within a body lumen.

Abstract: A method of manufacturing metallic articles from a metal substrate includes the steps of: a) jetting an image with a UV curable inkjet ink on at least one surface of the metallic substrate; b) UV curing the image; c) electroplating or acidic etching the at least one metallic surface not covered by the UV cured image; and d) stripping or solubilizing the UV cured image by an aqueous alkaline solution; wherein the UV curable inkjet ink has a viscosity of no more than 100 mPa·s at 25° C. and at a shear rate of 1,000 s?1; and wherein the UV curable inkjet ink contains a specific polymerizable composition and up to 20 wt % of photoinitiator including at least one of an acyl phosphine oxide photoinitiator and a thioxanthone photoinitiator.

Abstract: A multiwire unit having a plurality of wire sections which are formed in one piece from a tubular piece whose tubular jacket is subdivided in at least an axial subsection by a plurality of axial slots. The wire pieces remain interlinked at a front end section at a distance to a front tube face, and assume a bent functional state downstream of the wire linking area in a defined functional state of the multiwire unit. The front wire linking area, in the functional state of the multiwire unit, is shaped to an essentially tipless front end closure. For this purpose, the axial slots end at an appropriate small axial distance to the front tube face. The multiwire unit may be formed as, for example, a wire basket unit or a wire filter unit for medical instruments.

Abstract: An aortic stent-graft may include a tubular graft extending from a proximal end to a distal end, the graft comprising a proximal sealing portion and an intermediate portion, wherein a proximal end of the intermediate portion abuts the distal end of the proximal sealing portion. At least one sealing stent may be attached to the proximal sealing portion. A first fenestration window is disposed in the intermediate portion. The first fenestration window has a length determined by the equation L=1.23*D?24 millimeters, where L is the length of the first fenestration window. D is between about 24 millimeters and 45 millimeters.

Abstract: An imprint lithography template or imprinting stack includes a porous material defining a multiplicity of pores with an average pore size of at least about 0.4 nm. A porosity of the porous material is at least about 10%. The porous template, the porous imprinting stack, or both may be used in an imprint lithography process to facilitate diffusion of gas trapped between the template and the imprinting stack into the template, the imprinting stack or both, such that polymerizable material between the imprinting stack and the template rapidly forms a substantially continuous layer between the imprinting stack and the template.

Abstract: There is provided a method of processing a substrate using a block copolymer composed of a first polymer containing an oxygen atom and a second polymer containing no oxygen atom, the method including: coating the block copolymer onto the substrate on which a predetermined pattern is formed; phase-separating the block copolymer into the first polymer and the second polymer; and heating the substrate in a low oxygen atmosphere to selectively remove the first polymer from the phase-separated block copolymer.

Abstract: In one embodiment, a semiconductor package includes a semiconductor die having conductive pads. A lead frame is directly connected to the conductive pads using an electrochemically formed layer or a conductive adhesive layer thereby facilitating an electrical connection between the conductive pads of the semiconductor die and the lead frame without using separate wire bonds or conductive bumps.

Abstract: The disclosure relates to a method for making a metal nanowire film. The method includes applying a metal layer on a substrate; placing a carbon nanotube composite structure on the metal layer, wherein the carbon nanotube composite structure defines a number of openings and parts of the metal layer are exposed by the number of openings; dry etching the metal layer using the carbon nanotube composite structure as a mask; and removing the carbon nanotube composite structure. The carbon nanotube composite structure includes a carbon nanotube structure and a protective layer coated on the carbon nanotube structure. The carbon nanotube structure includes a number of carbon nanotubes arranged substantially along the same direction.

Abstract: The present invention relates to a method of producing patterned silver nanowire, comprising: coating a photosensitive polyamide acid polymer solution on a silica substrate and dried; using a photomask to paste on the photosensitive polyamic acid and illuminates by ultraviolet; using a developer to obtain a patterned polyamide acid template; coating a metal nanowire suspension on the patterned template; and removing the metal nanowire outside of the patterned polyamic acid. The present invention also discloses an electrode using the patterned metal nanowire and a transistor using the patterned metal nanowire electrode.

Abstract: A method for manufacturing an array substrate comprising: using a mask plate (4), and controlling exposure energy to obtain a first exposure feature size, so as to form a gate metal layer on the array substrate; and using the mask plate again, and controlling exposure energy to obtain a second exposure feature size larger than a size of the gate metal layer, so as to form low doped regions (8) located at opposite sides of the gate metal layer and having a same length. The method can form the two low doped regions of the LTPS-TFT having the same length and guarantee the ability of the LTPS-TFT to suppress the leakage current.

Abstract: A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4?x?0.7).

Abstract: Embodiments hereof relate to a guidewire formed from an elongated shaft, at least a portion of the shaft having an outer layer, a plurality of channels formed through the outer layer, and an inner core. The outer layer is formed from a material non susceptible to erosion by an erosion agent and the inner core is formed from a radiopaque material susceptible to erosion by the erosion agent. When exposed to the erosion agent, core material adjacent to the channels is removed to form a pattern of integral radiopaque segments or markers with a plurality of voids therebetween. By controlling the location of channels and the rate of erosion of the core material, the pattern of integral radiopaque segments and voids allow for in situ measurement when viewed under fluoroscopy.