Abstract: In the manufacture of a printed circuit board a sacrificial tin-lead layer is deposited on the surface of the board by electroplating. Holes are then formed in the board by UV laser ablation. Debris from the ablation process is adsorbed on the sacrificial layer. The sacrificial layer is then removed by means of a chemical stripping process, along with the debris.

Abstract: A phase-shifting photomask blank has a transparent substrate, a phase-shifting film deposited on the transparent substrate, the phase-shifting film including a transversely central composition which results in a reduced rate of side etching, and a patterned photoresist film masking the phase-shifting film. When the phase-shifting film is dry-etched through the patterned photoresist film into a desired circuit pattern, transversely different rates of side etching of the phase-shifting film are substantially equalized due to the reduced rate of side etching resulting from the transversely central composition. The circuit pattern includes openings defined by removal of the phase-shifting film and shifters left between the openings. The shifters have respective side surfaces free of steps and extending substantially perpendicularly from the transparent substrate.

Abstract: An adhesive is applied onto a flexible resistive film 1 and dried to form an adhesive layer 2. A metal foil 3 is contacted onto the layer 2, which is subjected to a heat and pressing treatment. The foil 3 is polished. An ultraviolet light curable ink is applied on the foil 3 and dried to form a first layer 4. A negative film is placed on or over the layer 4 and ultraviolet light is irradiated thereto through the film so that the layer 4 is cured. Uncured portions of the layer 4 is removed so that cured portions thereof remain and the foil 3 is exposed between the remaining cured portions. The metal foil 3 is subjected to an etching treatment to remove exposed portions of the foil 3 so that unexposed portions of the foil 3 remain and form conductors 3A. The cured portions of the layer 4 is removed from the conductors 3A. A metal plating film 5 is formed on each conductor 3A to form each electrical conductive circuit 9.

Abstract: An attenuating phase-shifting optical lithographic mask is fabricated, in a specific embodiment of the invention, by first depositing a uniformly thick molybdenum silicide layer on a top planar surface of quartz. The molybdenum silicide layer has a thickness sufficient for acting as an attenuating (partially transparent) layer in a phase-shifting mask. A uniformly thick chromium layer is deposited on the molybdenum silicide layer. The chromium layer has a thickness sufficient for acting as an opaque layer in the phase-shifting mask. Next, the chromium layer is patterned by dry or wet etching, while the chromium is selectively masked with a patterned resist layer. Then the molybdenum silicide is patterned by dry or wet etching, using the patterned chromium layer as a protective layer, whereby a composite layer of molybdenum silicide and chromium is formed having mutually separated composite stripes. Any remaining resist is removed.

Abstract: A method of producing an aperture grill of a CRT display device is disclosed. The aperture grill is of a small thickness of the order of 20 to 100 .mu.m. To a metal plate with front and rear surface resin layers are applied front slit pattern mask with a single broad slit pattern and a rear slit pattern mask with two adjacent, narrow slit patterns. With these two masks disposed in opposition, the slit patterns are printed and developed on the resist layers. Thereafter, etching is carried out on the rear surface of the metal plate via the rear resist layer, and rear cavities are formed in the metal plate. Then, a reinforcing, etchant-proof film is attached to the rear resist layer to cover the rear cavities, and thereafter etching is carried out on the front surface of the metal plate via the front resist layer, to thereby form a front cavity.

Abstract: An ink jet recording head wherein a substrate with a groove for forming an ink pathway connected to an orifice for discharging ink and a plate member are bonded so as to form the ink pathway bycharging the recessed portion of groove with a filling material;evening the upper surface of the substrate and the upper surface of said filling material;bonding the substrate and said plate member to the evened surface; andremoving said filling material therefrom.

Abstract: A method for forming a defect-free phase shift mask includes forming a mask blank having a substrate, an etch stop layer, a phase shift layer and an opaque layer. The etch stop layer and phase shift layer are formed of chemically different materials to allow selective etching and end point detection. Initially the opaque layer is patterned and etched using a process such as e-beam lithography. Then the phase shift layer is patterned and etched using the etch stop layer as an end point. Bump defects formed in phase shift areas are then removed by exposing a resist layer to leave the phase shifters, or alternately just the defects, unprotected. During defect etching, the etch stop layer can again be used to endpoint the etch process. The etch stop layer can also be formed as a phase shift layer to permit removal of indentation defects using a process such as ion milling.

Abstract: A phase shift optical mask is adapted to receive exposure light and is provided with a transparent substrate, a phase shifter shifting a phase of the exposure light with respect to the phase of the exposure light transmitted through the transparent substrate, and a transparent layer interposed between the transparent substrate and the phase shifter. The transparent layer shifts the phase of the exposure light by 90.degree.+180.degree..multidot.n and n is an integer.

Abstract: A photoresist pattern is formed on a quartz substrate. The quartz substrate is dipped into a silicon oxide supersaturated solution of hydrofluoric acid, and a silicon oxide is precipitated out of the supersaturated solution, thereby forming an SiO.sub.2 film on that exposed surface of the quartz substrate which is not covered with the photoresist pattern. After that, the photoresist pattern is ashed by oxygen plasma, and the ashed pattern is removed. The SiO.sub.2 film remaining on the quartz substrate serves as a phase shifter.

Abstract: A thermal isolation microstructure fabricated by a process which allows the ultra thinning of support legs for the microdetector.

Abstract: A process for reactive ion etching or ion milling of an air bearing slider comprises the steps of mechanical alignment of unetched slider rows with active transducer devices onto an alignment fixture; positioning a layer of thermally conductive adhesive between the rows and a substrate; heating the adhesive through the substrate such that the adhesive bonds the rows to the substrate while encapsulating the rows; removing the alignment fixture; patterning and etching the exposed planarized slider surfaces; stripping the resist and cutting the rows into individual sliders while still bonded to the substrate; stripping the adhesive with an organic solvent. This process increases tolerance to manufacturing variability, minimizes damage and contamination of the transducer devices, and decreases the cycle time and production costs.

Abstract: A method of preparing a patterned thin film resistor that is appropriately used in combination with semiconductor devices. The method comprises a thin film forming step comprising forming a thin film of a compound comprising at least one metal on an oxide film such as a silicon oxide film; a masking step comprising covering a desired area of the thin film by an organic material; a patterning step comprising converting to plasma a gas mixture comprising a fluorine compound gas and oxygen, and removing an area of the thin film, that is not covered by the organic material by exposing it to a gas containing activated fluorine by the plasma conversion; and a removing step comprising removing the organic material remaining on the desired area of the thin film.

Abstract: A method and apparatus for the production of transparent phase reticule mask for projecting high intensity light--such as that used for direct laser ablation of materials from substrates--is disclosed. The transparent phase reticule mask includes first portions which are for scattering light beyond the solid angle of an imaging system and second transparent portions which scatter light to an angle where projection by an imaging system can occur. Phase reticule mask configurations are disclosed including a known phase reticule mask which has gratings, and a new phase reticule mask having random phase roughening for the scattering of light. Random phase roughening includes imparting to the roughened area a mean solid angle of scattering that exceeds the solid angle of collection of an image system. Thus, the total fraction of incident light is below the ablation threshold and constitutes the dark patterned region of the mask.

Abstract: A method for manufacture of printed circuit boards uses plasma etch back/desmear, carbon deposits on board surfaces to be plated and panel plating. The plated board is abrasively pre-treated, imaged, developed, etched, and stripped for final preparation before drilling. The pre-treating, imaging, developing, etch back and stripping used for inner panel boards is the same as the process steps and equipment used for the final process of the panel plated boards. The process is environmentally conscious in that it produces waste products which contain only one metal in solutions easily treated by conventional and non-conventional waste treatment technologies and eliminates or reuses by-products produced by other printed circuit board and produces waste products which contain only one metal.

Abstract: Novel polysilphenylenesiloxanes having a three-dimensional mesh structure of silphenylenesiloxane core surrounded by triorganosilyl groups, which have a good sensitivity to ionizing radiations such as deep ultraviolet rays, electron beams and X-rays, a high softening point of 400.degree. C. or more, and a good resistance to O.sub.2 -plasma etching, and exhibit a high contrast and low swelling. These polysiphenylenesiloxanes are useful as a resist material, especially a top layer resist of the bi-level resist system and an interlevel dielectric or heat-resisting protective layer. The resist material has a high resolution because of a high contrast, low swelling and high thermal resistance thereof.

Abstract: In a method for fabricating a printed circuit board on a doubly contoured or hemispherical substrate such as a radome, a coherent light source is used to form a plurality of elements of a predetermined pattern on the surface of the substrate. The substrate includes a bottom layer and a metallized layer. At least a first element of the pattern is formed by ablating the element into a resist coating or ablating the element into the metallized layer with the coherent light source. The coherent light source preferably includes an excimer laser. The substrate is then displaced relative to the coherent light source until all the elements of the predetermined pattern are formed over the entire surface of the substrate. When the pattern is ablated into the resist material, an etching technique is used to remove portions of the metallized layer from the substrate.

Abstract: A method of making printed circuit boards in a continuous process. The method uses copper base metal sputtered onto a substrate. This base metal is much thinner than the base metal normally used in printed circuit processes and ultimately allows a greater number of conductors per unit of length to be made on the boards.

Abstract: A novel reticulated array comprises islands of ceramic (e.g. BST 20) which are fabricated from novel materials using unique methods of patterning. Trenches (22) are formed in the ceramic substrate from the front side and filled with a filler material (e.g. parylene 24). An elevation layer (e.g. polyimide 26) is deposited above the filler material, and a front side optical coating (e.g. transparent metal layer 34, transparent organic layer 36 and conductive metallic layer 38 ) is elevated above the substrate between the ceramic islands. The elevation layer provides added protection to the optical coating during filler material removal. The substrate is thinned from the back side down through a portion of the trench filler material. Novel fabrication methods also provide for the convenient electrical and mechanical bonding of each of the massive number of ceramic islands to a signal processor substrate (e.g. Si 62) containing a massive array of sensing circuits.

Abstract: In a phase shift mask and a method for repairing a defect of a phase shift mask according to the present invention, a phase shifter defective portion in which a portion of a phase shifter portion is missing is formed in a region including a boundary between a light transmitting portion and a phase shifter portion, and phase shifter defective portion is supplemented with a repairing member having substantially the same transmittance as that of phase shifter portion and capable of converting a phase of exposure light by 180.degree.. Thus, a defect of the phase shifter portion generated on or in the vicinity of the boundary between the light transmitting portion and the phase shifter portion can be repaired without impairing a function as a phase shift mask.

Abstract: An anisotropic liquid phase photochemical etch is performed by submersing a substrate 30 (e.g. copper) in a liquid 34 containing an etchant (e.g. hydrochloric acid) and a passivant (e.g. iodine), the passivant forming an insoluble passivation layer 36 (e.g. Cul) on the surface, preventing the etchant from etching the surface. The passivant and its concentration are chosen such that the passivation layer 36 has a solubility which is substantially increased when it is illuminated with radiation 38 (e.g. visible/ultraviolet light). Portions of the surface are then illuminated with radiation 38, whereby the passivation layer 36 is removed from those illuminated portions of the surface, allowing the etch to proceed there. Portions of the surface not illuminated are not etched, resulting in an anisotropic etch. Preferably, an etch mask 32 is used to create the unilluminated areas. This etch mask 32 may be formed on the surface or it may be interposed between the surface and the radiation source.

Abstract: A ferroelectric capacitor and method for making the same are disclosed. The ferroelectric capacitor may be constructed on a silicon substrate such as SiO.sub.2 or Si.sub.3 N.sub.4. The ferroelectric capacitor includes a bottom electrode, a layer of ferroelectric material, and a top electrode. The bottom electrode is constructed from a layer of platinum which is bonded to the silicon substrate by a layer of metallic oxide. The metallic oxide does not diffuse into the platinum; hence, a thinner layer of platinum may be utilized for the electrode. This reduces the vertical height of the capacitor and other problems associated with diffusion of the layer used to bond the bottom electrode to the substrate surface.

Abstract: A method for removing film from a substrate, and more particularly, photoresist from a semiconductor wafer, by a shear stress process. A wafer is coated with a medium having coefficients of thermal expansion and elasticity, such as water, and then cooled. The cooling causes shear stress to occur between the photoresist and the wafer, thereby loosening the photoresist from the wafer. The wafer is then heated to remove the medium and photoresist from the wafer. The coating, cooling and heating steps are repeated until all of the photoresist is removed. Relative to the prior art, this invention provides a novel process for removing film from a substrate that minimizes expense; substantially cuts processing time; is less complex; less hazardous; and environmentally favorable.

Abstract: An article comprising a substrate formed with predetermined patterns and magnetized magnetic substances arranged in the substrate in accordance with the predetermined patterns, and a method of manufacturing an article with magnetized magnetic substances arranged according to predetermined patterns, comprising the steps of arranging said magnetic substances in a substrate in accordance with the predetermined patterns and magnetizing the magnetic substances.

Abstract: The present invention relates to a rotary exposure machine (14), comprising: a guide bed (26); means (15, 16) for rotably supporting a round screen (1) on the guide bed (26); driving means (19, 20) for rotably driving the round screen (1); an optical slide (21) moved along guides (22) while the round screen (1) is turning, the guides (22) are mounted on the guide bed (26); and a laser (27) for exposing a photosensitive coating layer (L) provided on the outer surface of the round screen (1), wherein the laser (27) is carried along with the optical slide (21).

Abstract: A method of patterning a film of PZT material comprises the steps of providing a mask over a selected surface portion of the PZT material; and, plasma etching unmasked portions of the thin film material. The method includes the steps of: introducing a gas mixture of halogenated gases into a chamber; ionizing the gas mixture into a plasma in the chamber by imposition of an electric field across the introduced gaseous mixture, chemically reacting the ionized gaseous mixture, chemically reacting the unmasked portions of the lead zirconate titanate thin film material to selectively remove such exposed portion of the thin film material. The gas mixture is a mixture of a chloride and a compound of fluorine. Preferably the compound of fluorine is a halocarbon or fluorocarbon. In particular, the fluorocarbon is a trifluoromethane, CHF.sub.3, and the chloride is boron trichloride BCl.sub.3.

Abstract: A pattern formation material capable of keeping dimensional accuracy of a pattern at a desired level even after a polymer is left standing for a long time after exposure and before baking, and a method of forming such a pattern formation material, which comprises a copolymer containing units containing a polycyclic aromatic ring, a condensed ring having at least one aromatic ring, or an aromatic ring having, as a substitution group, an alicyclic group, a branched alkyl or a halogen, and units from a monomer containing a photosensitive group, and a compound generating an acid by irradiation to ultraviolet rays.

Abstract: An antireflective coating used in the photolithography process is applied and removed in a plasma reactor. The halocarbon plasma polymer such as fluorocarbon plasma polymer of the present invention provides an improved antireflective coating.

Abstract: Electrical charge accumulation caused by exposure to a charged particle beam during the formation of latent image pattern can be reduced and thus the positional deviation of the pattern by using a bottom-resist layer comprising a radiation-induced conductive composition. Highly integrated semiconductor device can be made easily and in high yields. The positional deviation can further be reduced by exposing a charge particle beam patterning apparatus substantially simultaneously with an actinic radiation such as ultraviolet light, X-ray, and infrared light.

Abstract: There is disclosed a method for fabricating a liquid jet recording head having heat acting portions, communicating to orifices for liquid discharge, for applying heat energy to a liquid to form a bubble therein, electricity-heat converters for generating said heat energy, pairs of electrodes, and an upper protective layer, characterized in that the wet etching rate of electrode layer is higher on the upper portion in a direction of film thickness than on the lower portion.

Abstract: A method for forming contact vias in a integrated circuit which do not have planarizing material nearby. After a first insulating layer is deposited over the integrated circuit, a planarizing layer is deposited over the first insulating layer. The planarizing layer is etched back and portions of the planarizing layer may remain in the lower topographical regions of the first insulating layer to planarize the surface of the integrated circuit. A first masking layer is then formed over the surface of the integrated circuit. The openings created in the first masking layer have a size which is greater than the size of the contact vias to be formed. The first insulating layer is partially etched into so that portions of the planarizing layer near the locations of the contact vias are removed. The first masking layer is then removed, and a second insulating layer is deposited over the integrated circuit.

Abstract: A method of forming an atomizing spray nozzle includes the steps of etching a swirl chamber and a spray orifice in a thin sheet of material. The swirl chamber is etched in a first side of the disk and the spray orifice is etched through a second side to the center of the swirl chamber. Feed slots are etched in the first side of the disk extending non-radially to the swirl chamber such that liquid can be conveyed to the swirl chamber so as to create and sustain the swirling motion. A inlet piece with inlet passage therein is connected with first side of the disk so as to convey liquid to the feed slots of the disk and to enclose the feed slots and swirl chamber. In addition to the method described an atomizing spray nozzle having the configuration described is much improved in its spray characteristics. The present invention also provides a method of forming a number of spray nozzles simultaneously in a single manufacturing process.

Abstract: A method is provided for fabricating smoothly-curved microstructures such as microlenses on a substrate and certain unique microstructures and microstructure arrays obtained through use of such techniques are also provided. The substrate may be smoothly-curved and the bases of the microstructures may have a variety of shapes. The method takes advantage of the surface tension of a liquid to form droplets having a desired shape over high surface energy portions or area of the substrate, which substrate has been previously patterned to have areas with surface energies which are above and below, respectively, the surface tension of a liquid deposited to form the droplets. The formed droplets may then be cured to create the desired microstructures.

Abstract: A method of making circuit boards is disclosed that is suitable for use in a high-volume automated processing plant. The method can be used to produce either single-sided or double-sided circuit boards with access windows allowing electrical access and connection between traces from both sides. In the process, access holes are punched in a coverfilm. A copper sheet having a tin plating on one side is laminated to the coverfilm, with the tin side facing the coverfilm. A pattern representing a circuit is screened on the resulting laminate with a UV-curable resist, developed in a UV dryer, and then the unprotected copper is etched away. The remaining tin is then removed with solder stripping agent, and the resulting circuit is protected with a coverfilm. The process can be applied to large rolls of materials in an automated process, with large numbers of circuits applied to the laminated board. The circuits can then be punched out of the web with a hydraulic press in large numbers.

Abstract: A method of forming optical light guides through silicon is disclosed wherein such light guides extend from a first (or front) surface along a preferred crystallographic direction to a second (or back) surface.

Abstract: A description is given of a method and a device (1) for providing (replicating) a patterned resyntetic resin relief (37) on the surface (25) of a glass substrate (27). For this purpose, a UV-curable acrylate lacquer (33) is applied to the surface (25), after which a transparent mould (3) having a relief (13) is rolled-off over the surface (25). By means of a UV light source (17) and an elliptic mirror (21), the lacquer is cured at the location of the focal line (23), thereby forming said relief (37). The relief (13) of the mould (3) is replicated on the glass substrate (27). The method described enables a relief of small dimensions (10.times.10 .mu.m) to be seamlessly provided on a large fiat surface (1.times.1 m), without being hindered by large release forces.

Abstract: The present invention is directed to a method of forming and removing a resist pattern, used in a semiconductor manufacture.In a first mode of the present invention, an upper resist layer containing germanium is selectively formed on a bottom resist layer and a resist pattern is formed with the upper resist layer as a mask. In a second mode of the present invention, a resist layer formed on a substrate is selectively exposed to introduce a germanium compound into the exposed portions and the above described resist layer is subjected to an anisotropic dry etching to remove the nonexposed portions of the resist layer, whereby forming a resist pattern. Accordingly, the fine pattern can be formed on the substrate in high accuracy by the use of the above described resist pattern. In addition, in the first and the second modes of the present invention, the resist pattern is removed by the use of an acid having an oxidizing power, so that the resist pattern can be easily removed from the substrate.

Abstract: The invention is directed to an expandable stent for implantation in a body lumen, such as an artery, and a method for making it from a single length of tubing. The stent consists of a plurality of radially expandable cylindrical elements generally aligned on a common axis and interconnected by one or more interconnective elements. The individual radially expandable cylindrical elements consist of ribbon-like material disposed in an undulating pattern. The stents are made by coating a length of tubing with an etchant-resistive material and then selectively removing portions of the coating to form a pattern for the stent on the tubing and to expose the portions of the tubing to be removed. This may done by machine-controlled activation and relative positioning of a laser in conjunction with the coated tubing. After the patterning of the tubing, the stent is formed by removing exposed portions of the tubing by an etching process.

Abstract: A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO.sub.3 :H.sub.2 O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70% the porous silicon pattern emits visible light at room temperature.

Abstract: Methods for making mechanical and micro-electromechanical devices (a) forming a mold having a base and metallic walls defining a molding space therebetween, the base being exposed between the metallic walls and either being capable of or having a nucleating upper surface capable of nucleating the deposition of a structural material which does not nucleate on or adhere to the metallic walls at conditions of deposition; (b) depositing a structural material onto either the nucleating upper surface or base and filling to a predetermined height to form a strong solid body; and (c) removing the metallic walls, leaving free-standing, solid body walls of structural material attached to the base; another embodiment of the method may include step (a) and steps (b) filling the molding space with a diamond-nucleating material; (c) consolidating the diamond-nucleating material so as to form a strong solid body; and (d) removing the metallic walls, and thereby freeing the solid body, by dissolving the metallic walls with a

Abstract: An improved process for fabricating a planar field oxide structure on a silicon substrate was achieved. The process involves forming the field oxide by using the LOCal Oxidation of Silicon (LOCOS) process in which the device area is protected from oxidation by a silicon nitride layer. A sacrificial implant layer, such as CVD oxide, oxynitride or an anti-reflective coating (ARC) layer is used to fill in the gap between the silicon nitride and the field oxide structure and make more planar the substrate surface. The substrate surface is then implanted with As.sup.75 or p.sup.31 ions penetrating the sacrificial implant layer and forming a implant damaged layer on the field oxide. The implant damaged layer which etches faster in a wet etch in removed selectively thereby making a more planar field oxide structure. The method does not require a recess to be etched in the silicon substrate and therefore, has certain reliability and cost advantages.

Abstract: According to this invention, a dry etching method includes the step of sequentially forming an SiO.sub.2 film, an Al--Si--Cu thin film, and a photoresist on an Si substrate to sequentially form a mask pattern, the step of etching the Al--Si--Cu thin film by RIE using a gas mixture of Cl.sub.2 and BCl.sub.3 as an etching gas, and the step of removing etching residues by a sputter effect obtained by the plasma of the BCl.sub.3 gas.