Abstract: A method for producing a magnetic transducer with a inductive write head having a multilayer coil with a high aspect ratio and a short yoke is provided. A damascene process is used for two coil layers and a conventional process for the third coil layer. The process of the invention allows a seed layer for the coil to be deposited on the side walls of the trenches for the first and second coil layers. In one embodiment the seed layer for the coil is preceded by an adhesion layer.

Abstract: A working method of a bar block with a plurality of magnetic head elements and a plurality of pairs of electrode terminals electrically connected to the plurality of magnetic head elements arranged on an element-formed surface of the bar block in at least one line. This method includes a step of pre-laminating an ACF on the element-formed surface of the bar block, a step of bonding a conductive plate member with a plurality of projections located at positions faced to the plurality of pairs of terminal electrodes of the bar block, respectively, on the ACF so that each pair of the terminal electrodes is electrically short-circuited with each other, and a step of, then, working the bar block.

Abstract: A method is provided for manufacturing a magnetoresistive device substructure. The substructure includes: a TMR element; a bias field inducing layer that covers the TMR element; and a front flux probe layer formed on the bias field inducing layer and introducing a signal flux to the TMR element. In the manufacturing method, the TMR element and a dummy element are first formed. The dummy element has a shape similar to the TMR element and located in a specific position with respect to the TMR element. Next, the bias field inducing layer is formed on the TMR element in a specific position referring to the position of the dummy element. At the same time, a dummy bias field inducing layer is formed in a position located off the dummy element. Next, the front flux probe layer and a dummy front flux probe layer are formed at the same time on the bias field inducing layer and the dummy element, respectively.

Abstract: Contaminants are removed from a surface of a substrate by applying a fluid to the surface; lowering the temperature of the fluid to form a solid layer of the fluid and entrap contaminants therein; and applying energy to the layer and/or substrate to cause the layer containing the contaminants to separate from the surface.

Abstract: A process for forming sub-lithographic features in an integrated circuit is disclosed herein. The process includes modifying a photoresist layer after patterning and development but before it is utilized to pattern the underlying layers. The modified photoresist layer has different etch rates in the vertical and horizontal directions. The modified photoresist layer is trimmed with a plasma etch. A feature included in the trimmed photoresist layer has a sub-lithographic lateral dimension.

Abstract: A process of forming a microactuator for positioning a transducing head over a selected radial track of a rotatable disc in a disc drive system is disclosed. A tub is etched in a substrate, and a bottom coil layer is plated at least partially in the tub. A first insulating layer is deposited on the bottom coil layer. A ferromagnetic core layer is formed on the first insulating layer. A second insulating layer is deposited on and around the ferromagnetic core layer. A top coil layer is plated on the second insulating layer, and contacts the bottom coil layer at a point spaced from the ferromagnetic core. A rotor is formed on a rotor substrate to confront the ferromagnetic core, is operatively attached to the slider and is movable with respect to the ferromagnetic core.

Abstract: In a pattern forming method for selectively forming an oxide layer on a substrate surface, the substrate surface is selectively coated with a coating layer. On the coating layer and an exposed part of the substrate surface, an oxide layer is formed by the use of a predetermined solution. Subsequently, the oxide layer on the coating layer is removed together with the coating layer to selectively leave the oxide layer on the substrate surface. Thus, a pattern is formed. The coating layer is removed in a liquid phase or optically together with the oxide layer on the coating layer. The oxide layer is formed by the use of, as the predetermined solution, an aqueous solution or a hydrofluoric acid solution of a fluoro metal complex compound and/or metal fluoride of at least one element selected from the group consisting of alkaline earth metal, transition metal, gallium, indium, silicon, tin, lead, antimony, and bismuth in the presence of an fluoride ion capturing agent.

Abstract: A method for magnetic patterning of conductors includes imparting a pattern of magnetization into a magnetic material and depositing a substance onto the magnetic material that preferentially gathers according to the pattern in the magnetic material. A set of conductors are then formed such that the substance controls a pattern for the conductors.

Abstract: There is first provided a substrate 10 and a target layer 12. There is then formed upon the target layer a patterned positive photoresist layer 14. There is then processed the target layer while employing the patterned positive photoresist layer as a mask layer, to thus form a processed target layer and a processed patterned positive photoresist layer. There is then photoexposed 18 the processed patterned positive photoresist layer to enhance its solubility. Finally, there is then stripped from the processed target layer the photoexposed processed patterned positive photoresist layer while employing a solvent.

Abstract: A method for making a polymer-based rare earth-doped waveguide includes the steps of: providing a substrate (11); spin coating a polymer bottom cladding layer (12) on the substrate; spin coating a core layer (13) comprising a polymer and complex rare earth metal ions, which can be excited to produce a laser, on the bottom cladding layer; using a channel patterning technique with masking and ultraviolet (UV) radiation followed by etching to form at least one channel waveguide (14); and spin coating a polymer top cladding layer (15) over the at least one channel waveguide and exposed portions of the bottom cladding layer. The method includes improving the solubility of rare earth metal ions in a polymer matrix, by forming a complex of each rare earth metal ion with an organic compound. These complexes have higher solubility in a fluorinated polymer, compared with pure rare earth metal ions.

Abstract: The invention relates to a method for etching an opening, and more precisely, to etching in a silicon plate for creating a nozzle opening. According to the invention, one side of the silicon plate (1) is protected by a protective layer (2), and a recess (5) is made in the protective layer. Etching is made anisotropically through the recess so as to create a cavity (4) in the shape of a truncated pyramid of a predetermined depth in the silicon plate. The cavity is doped so as to create a doped layer (3) at the predetermined depth. The etching is then continued until the bottom surface of the cavity has passed the doped layer. Subsequently, etching is performed from the other side, while a voltage is applied to the doped layer, so as to free the nozzle opening at the other side. The invention enables an accurate control of the surface area of the nozzle opening. Through this, the amount of discharged fluid and the directional precision can be controlled very accurately.

Abstract: A method is disclosed for speeding workpiece thoughput in low pressure, high temperature semiconductor processing reactor. The method includes loading a workpiece into a chamber at atmospheric pressure, bringing the chamber down to an intermediate pressure, and heating the wafer while under the intermediate pressure. The chamber is then pumped down to the operating pressure. The preferred embodiments involve single wafer plasma ashers, where a wafer is loaded onto lift pins at a position above a wafer chuck, the pressure is rapidly pumped down to about 40 Torr by rapidly opening and closing an isolation valve, and the wafer is simultaneously lowered to the heated chuck. Alternatively, the wafer can be pre-processed to remove an implanted photoresist crust at a first temperature and the chamber then backfilled to about 40 Torr for further heating to close to the chuck temperature. At 40 Torr, the heat transfer from the chuck to the wafer is relatively fast, but still slow enough to avoid thermal shock.

Abstract: An etching mask is produced for etching a substrate by a photoresist layer being exposed such that areas which are exposed once are not yet completely exposed and, on the basis of a reflective layer which is located under the photoresist layer, additionally exposed areas are exposed completely. In consequence, a first etching mask which is used for etching a substrate can be renewed by a second etching mask in that a photoresist layer which is applied to the first etching mask or instead of the first etching mask is exposed such that areas which have been exposed once are not yet completely exposed, and areas which have been additionally exposed on the basis of a reflective layer which is located under the photoresist layer and corresponds to the first etching mask are exposed completely.

Abstract: In one embodiment, the present invention relates to a method of treating a patterned resist involving the steps of providing the patterned resist having structural features of a first size, the patterned resist containing a polymer having a labile group; contacting a coating containing at least one cleaving compound with the patterned resist to form a thin deprotected resist layer at an interface between the patterned resist and the coating; and removing the coating and the thin deprotected resist layer leaving the patterned resist having structural features of a second size, wherein the second size is smaller than the first size.

Abstract: A method for magnetic patterning of conductors includes imparting a pattern of magnetization into a magnetic material and depositing a substance onto the magnetic material that preferentially gathers according to the pattern in the magnetic material. A set of conductors are then formed such that the substance controls a pattern for the conductors.

Abstract: There are provided methods of making hardmask assemblies or other layered structures, and other masks, including providing an annular seal member between a first surface of layered structure, preferably a hardmask assembly, and a firs clamp element, the hardmask assembly comprising at least a hardmask layer; and applying a force between the first clamp element and a second clamp element to hold the hardmask assembly between the annular seal member and the second clamp element In addition, there are provided methods further comprising etching the first surface of the hardmask assembly within the bounds of an interior space defined by the annular seal member. Furthermore, there are provided methods further comprising etching the substrate layer through the hardmask layer and/or removing the hardmask layer after etching the substrate layer.

Abstract: A device for utilizing an optical infrared emitter/detector to sense substances of interest is provided. The infrared emitter/detector comprises a single crystal semiconductor, photonic band gap structure which functions both as an infrared emitter, a narrow-band filter, and as a broad-band infrared bolometer detector to exert wavelength control directly on the active element emitter/detector surface using the periodic symmetry of the photonic band gap structure to produce narrow wavelength “forbidden” optical transmission bands or modes to sense the presence of a specified substance in the environment. A system and method for sensing specific substances using the optical infrared emitter/detector of this invention in a sensor device is also provided. Finally, a method of manufacturing the infrared emitter/detectors of the present invention is also provided.

Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.

Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.

Abstract: An inkjet printer nozzle plate having a non-wetting surface of uniform thickness and an orifice wall of tapered contour, and method of making the nozzle plate. In the method a metal masking layer is deposited on a glass substrate, the masking layer having an opening therethrough for passage of light only through the opening. Next, a negative photoresist layer is deposited on the masking layer, the negative photoresist layer being capable of photochemically reacting with the light. A light source passes light through the substrate, so that the light also passes only through the opening in the form of a tapered light cone. This tapered light cone will define the tapered contour of a nozzle plate orifice wall to be formed. The negative photoresist layer photochemically reacts with the light only in the light cone to define a light-exposed region of hardened negative photoresist.

Abstract: A method for forming a valve metal oxide for semiconductor fabrication in accordance with the present invention is disclosed and claimed. The method includes the steps of providing a semiconductor wafer, depositing a valve metal on the wafer, placing the wafer in an electrochemical cell such that a solution including electrolytes interacts with the valve metal to form a metal oxide when a potential difference is provided between the valve metal and the solution and processing the wafer using the metal oxide layer.

Abstract: A method of etching an underlying inorganic substrate through a patterned photoresist, including exposing a structure comprising said inorganic substrate and patterned photoresist to a plasma etchant generated from a plasma source gas including at least one fluorine-comprising gas and sulfur dioxide (SO2). The amount of sulfur dioxide present in said plasma source gas may be varied during the etching process. The method is particularly useful when the photoresist is a DUV photoresist. One of the preferred embodiments of the method is the etching of silicon nitride (SiNx) through a DUV photoresist, where the plasma source gas used to provide the etchant includes at least one fluorine-comprising gas, argon, and sulfur dioxide. Other preferred fluorine-comprising gases include nitrogen trifluoride (NF3), carbon tetrafluoride (CF4), and sulfur hexafluoride (SF6).

Abstract: A method of forming a relief image in a structure comprising a substrate and a transfer layer formed thereon comprises covering the transfer layer with a polymerizable fluid composition, and then contacting the polymerizable fluid composition with a mold having a relief structure formed therein such that the polymerizable fluid composition fills the relief structure in the mold. The polymerizable fluid composition is subjected to conditions to polymerize polymerizable fluid composition and form a solidified polymeric material therefrom on the transfer layer. The mold is then separated from the solid polymeric material such that a replica of the relief structure in the mold is formed in the solidified polymeric material; and the transfer layer and the solidified polymeric material are subjected to an environment to selectively etch the transfer layer relative to the solidified polymeric material such that a relief image is formed in the transfer layer.

Abstract: The stamp (10) for a lithographic process, such as patterning a surface layer, of the invention has a stamp body (5) with at least a first recess (11) formed therein, which recess defines a first aperture (15) in the printing face (3) of the stamp (10). The first recess (11) narrows with increasing distance to the printing face, while any cross-section of the first recess, when perpendicularly projected on the printing face (3), will lie within the aperture (15). The printing face may comprise small (11, 12) and large apertures (13) as well as small surfaces (14) in between apertures, while it is nevertheless able to produce prints which are accurate replicas of the printing face. Even details on a submicron scale can be adequately printed. The stamp (10) can be manufactured by a method which comprises anisotropic etching of a first body to make a mold and replicating the mold in the printing face (3) of the stamp (10).

Abstract: A wet etching apparatus and method to shorten processing time and to eliminate formation of unintended mask pattern are described. In the conventional art, after a mask pattern is formed, alien substances such as water mist or stain are left on the substrate. The alien substances act as an etching block in the wet etching process. This generates an unintended mask pattern. The present invention uses ultraviolet light to remove the alien substances prior to the etching process. When the alien substances are removed, the intended mask pattern is generated after the etching process. The wet etching device according to the present invention includes an ultraviolet cleaner and a conveyor to convey substrates to and from the ultraviolet cleaner. Spaces for the ultraviolet cleaner and the conveyor are created in the wet etching apparatus by reducing space for cassettes and reducing space required by the loader.

Abstract: In one embodiment, the present invention relates to a method of processing a semiconductor structure, involving the steps of providing the semiconductor structure having a patterned resist thereon; stripping the patterned resist from the semiconductor structure, wherein an amount of carbon containing resist debris remain on the semiconductor structure; and contacting the semiconductor structure with ozone thereby reducing the amount of carbon containing resist debris thereon.

Abstract: The present invention provides a process for self-limiting trim etch of patterned photoresist that will allow integrated circuit fabrication to achieve smaller integrated circuit component features and greatly reduce final critical dimension drift or variation. Trim time is set in a plateau region of the critical dimension loss process curve.

Abstract: A process for selectively plasma etching polycrystalline silicon or polysilicon in preference to silicon dioxide which minimizes the detrimental effect of carbon. It has been discovered that carbon from the plasma etch chemicals or from photoresist present interferes disadvantageously with the selective plasma etch of polysilicon as opposed to silicon dioxide. By heat treating and deep ultraviolet light treating the photoresist prior to the plasma etch step and by using non-carbon etch chemicals, this detrimental carbon effect can be reduced.

Abstract: A process is described for the manufacture of flexible tubular elements, particularly stents for the medical field, the process comprising the steps of:a) providing a hollow metal tube (or metal coated tube) with an open pattern of a chemical-etch-resistant coating layer;b) supporting the hollow metal tube with a coating thereon onto a chemical etch resistant support element;c) contacting the open pattern with a solution capable of etching the metal of the hollow metal tube so that said metal is etched away from physically exposed surfaces of the metal tube and openings in the metal tube corresponding to the open pattern of the coating layer are created in the metal tube element without etching the chemical etch resistant support element; andd) removing the metal tube from the chemical etch resistant support element.

Abstract: A method for pattern-etching thick alumina layers in the manufacture of thin film heads (TFH) by using compatible metallic mask layers and a wet chemical etchant. The deep alumina etching facilitates a studless TFH device where the coil and bonding pads are deposited and patterned simultaneously, and vias are later etched through the alumina overcoat layer to expose the bonding pads. The method also enables the etching of scribe-line grooves of street and alleys across the wafer for sawing and machining of sliders. These grooves eliminate most alumina chipping due to stress and damage introduced by the sawing and machining operations. Similarly, pattern-etching of the alumina undercoat facilitates the formation of precise craters for recessed structures. These can improve planarity and alleviate problems related to adverse topography and elevated features of TFH devices.

Abstract: A process for fabricating a feeler member for a micromechanical probe, in particular for an atomic force microscope, consists in creating a "positive" first mold by isotropically or anisotropically undercutting a silicon substrate. The resulting tip is precursor of the hard material (preferably diamond) tip to be obtained. The precursor has a small angle at the apex, for example in the order of 10.degree. to 20.degree., or less. The positive mold is then used to fabricate a "negative" mold having an imprint whose shape is that of the tip precursor. The negative mold is filled with a layer of hard material and the tip is then uncovered. The hard material tip therefore also has a small angle at the apex, equal to that of the precursor. The resolution that can be achieved with the probe is therefore higher than that assured by prior art probes.

Abstract: A method for etching of sub-quarter micron openings in insulative layers for contacts and vias is described. The method uses high resolution DUV photolithography. By using a thin layer of photoresist to pattern a hardmask, full advantage of the high resolution can be attained. The hardmask in turn, is sufficiently durable to withstand subsequent etching of the insulative layer. The methods taught by this invention are of particular value for the formation of contacts to semiconductive devices although they are also applied to forming via openings. DUV photoresists having thicknesses of less than 500 nm are used with a DUV stepper. The hardmask materials include Ti/TiN and amorphous silicon. Etching selectivities of these materials with respect to typical insulative materials used in integrated circuit manufacture are of the order of 50:1.

Abstract: A passivation coating is formed on a photoresist mask to increase the resistance of the mask during subsequent etching of an underlying conductive layer to form a pattern of sub-half micron conductive lines. In an embodiment of the invention, the passivation coating is formed by exposing the mask to a plasma containing nitrogen. The passivating coating maintains the substantially vertical mask profile during subsequent etching, such as high density plasma etching, thereby improving the dimensional integrity of the sub-half micron conductive lines.

Abstract: A method for stripping an ion implanted photoresist layer from a substrate. There is first provided a substrate. There is then formed over the substrate an ion implanted photoresist layer. There is then treated the ion implated photoresist layer with a first plasma employing a first etchant gas composition comprising a fluorine containing species to form a fluorine plasma treated ion implanted photoresist layer. Finally, there is then stripped from the substrate the fluorine plasma treated ion implanted photoresist layer with a second plasma employing a second etchant gas composition comprising an oxygen containing species without the fluorine containing species. The ion implanted photoresist layer is stripped from the substrate without plasma induced damage to the substrate.

Abstract: A system and a method for washing objects, such as cassettes and carriers used to hold and transport silicon wafers during manufacture of semiconductor chips. The method employs the steps of exposing to ultraviolet radiation the objects in a process chamber, spraying of developer fluid onto the objects, rinsing the objects, spraying of surfactant solution on the objects, rinsing the objects and drying the objects using heated, ionized ULPA filtered air. Apparatus for accomplishing the above is disclosed.

Abstract: An ultra-fine microfabrication method using an energy beam is based on the use of shielding provided by nanometer or micrometer sized micro-particles to produce a variety of three-dimensional fine structures which have not been possible by the traditional photolithographic technique which is basically designed to produce two-dimensional structures. When the basis technique of radiation of an energy beam and shielding is combined with a shield positioning technique using a magnetic, electrical field or laser beam, with or without the additional chemical effects provided by reactive gas particle beams or solutions, fine structures of very high aspect ratios can be produced with precision. Applications of devices having the fine structures produced by the method include wavelength shifting in optical communications, quantum effect devices and intensive laser devices.

Abstract: A method for manufacturing phase-shifting masks utilizing a photolithographic process and sidewall spacers to fabricate a phase-shifting layer. The method provides precise control over the shape and size of the resulting phase-shifting layer, and thus, simplifies photomask production.

Abstract: A method of manufacturing plates assembleable in a stack to provide a mold to form fastener elements includes applying a photoresist material to at least one side of the plate. The photoresist material is exposed to light. Portions of the photoresist material are removed based on the light exposure. Acid is applied to the plate, dissolving portions of the plate exposed to the acid and creating cavities.

Abstract: A method for use in mass-producing, from a plane sheet of metal, a three-dimensional structure consisting of plane mirrors and plane structural members, said three-dimensional structure of a type in which each mirror or structural member has at least one edge that is collinear with an edge of another mirror or structural member, whereby said three-dimensional structure can be formed by bending the sheet of metal along various edges, the method including the steps of: producing masks bearing images defining the location of bending grooves, shallow grooves, separation grooves and holes for indexing pins, selecting a mask, applying a coating of photoresist to both sides of the sheet of metal, transferring the images on the selected mask to the coating of photoresist, removing those portions of the coating of photoresist to which the images were transferred, etching the sheet of metal where the portions of the coating of photoresist were removed, removing the remaining photoresist from the sheet of metal, and rep

Abstract: A method of fabricating a resonant micromesh filter having conductive antenna elements sized on the order of microns. The steps comprise of first creating an exposure mask having absorbing portions capable of stopping incident ions completely and transmitting portions incapable of stopping incident ions and through which incident ions can pass. The absorbing and transmitting portions form in the mask in the pattern of the antenna elements to be fabricated. Second, an exposure mask confronting an unpatterned filter is positioned. The unpatterned filter includes: a substrate, a thin metal foil mounted on the substrate, and a resist material covering the metal flow. Third, ions are passed through the exposure mask. The absorbing portions of the mask stop the ions and the transmitting portions allow the ions to pass through the mask and expose the section of the resist material of the filter in the pattern of the antenna elements.

Abstract: A method for forming a tubular article having a perforated annular wall, such as a surgical stent, includes coating the exterior and interior cylindrical surfaces of a tubular member with a photoresist, exposing selected portions of the photoresist coated surfaces to light, developing the coating, and then etching the coating to remove unexposed portions of the coating and immediate underlying portions of the annular wall, thereby forming a tubular article having a wall structure defined by a skeletal framework. An apparatus for exposing a light-sensitive coating to a tubular article includes means for rotating and translating the article with respect to a light source, along a longitudinal axis and simultaneously exposing aligned portions of the interior and exterior cylindrical surfaces of the tubular member. The method and apparatus embodying the present invention are particularly suitable for forming stents that support the walls of weak human arteries.

Abstract: A hybrid stamp structure for lithographic processing of features below 1 micron is described, comprising a deformable layer (14) for accommodating unevenness of the surface of a substrate, and a patterned layer on the deformable layer in which a lithographic pattern is engraved. The stamp structure is further enhanced by comprising a third layer (16), which acts as rigid support for the stamp, thus preventing an undesired deformation of the stamp under load.

Abstract: In a filter well having an inlet portion and an outlet portion and a filter arranged between these, the filter is carried by a support surface having a number of flow channels, extending radially towards an outlet. The ridges between the flow channels have a width of not more than about 0.2 mm whereby essentially the entire upper surface of the filter becomes active at filtration. The filter well is formed by forming of plastic in a forming device, whereby the flow channel pattern in the support surface for the filter is formed by a forming part in the forming device, wherein a negative corresponding to the flow channel pattern has been made in the surface of the forming part by a photolithographic etching process or by laser machining.

Abstract: This method for preparing micromatrices consists in applying a specially-patterned intermediate layer of laser-absorbing substance on a solid support. The configuration of the sublayer fully corresponds to the topology of the manufactured matrix. The intermediate layer is further covered by a continuous layer of gel , the gel and the material of the support being transparent towards laser radiation. The gel layer is irradiated by a laser beam for a time needed to evaporate simultaneously the gel in the places immediately above the laser-absorbing sublayer and the sublayer itself. Oligonucleotides from a chosen set are then attached to the formed gel `cells`, one oligonucleotide to each cell.This method is intended for use in biotechnology, specifically for deciphering the nucleotide sequence of DNA.

Abstract: A nozzle plate free from stray fly and defective jetting is achieved by a method which has a first step of putting a photosensitive resin film 5 in pressure contact with a back surface of a nozzle plate 1. A part of the photosensitive resin film 5 is caused to step into a nozzle 4 by controlling the viscosity thereof by changing temperature. Then, the thus processed photosensitive resin film 5 is hardened by injecting ultraviolet rays thereto. Next, a front surface 2 of the nozzle plate 1 is subjected to a eutectoid plating 6 process. By regulating a step coverage d of a part of the eutectoid plating 6 into the nozzle 4 by the hardened photosensitive resin film 5, a nozzle plate having a consistent nozzles, each being free from stray fly and defective jetting can be formed.

Abstract: Manufacturing processes for apparatus, including slotted hypotube, for use as a catheter, a guidewire, a catheter sheath for use with catheter introducers or a drug infusion catheter/guidewire are disclosed. The manufacturing process includes creating a pattern of slots or apertures in a flexible metallic tubular member, by processes including but not limited to, electrostatic discharge machining (EDM), chemical milling, ablation and laser cutting. These slots or apertures may be cut completely or partially through the wall of the flexible metallic tubular member. These manufacturing processes may include the additional step of encasing the flexible metallic member such that a fluid tight seal is formed around the periphery of the tubular member.

Abstract: A method for etching a tapered edge on a cladding layer 10 of an integrated optical waveguide by simultaneously etching a cured droplet of photoresist 16 and the core cladding material to translate the profile of the droplet to the cladding to provide a larger cladding thickness at the interface to the optical fiber 20 and a taper to the cladding thickness needed to control the performance of the integrated optic device. Advantages include selective thinning of the core cladding while maintaining a low loss coupling of the optical fiber to the waveguide core on the integrated device, and higher yield in production during edge polishing.

Abstract: The present invention relates to a process for removing a protective coating from a surface of an airfoil which process comprises the steps of providing an airfoil having a protective coating to be removed and critical areas which require protection during a coating removal step and masking these critical areas by applying an ultraviolet curable masking material to the critical areas of the airfoil. The process of the present invention further comprises the steps of curing the UV curable masking material using ultraviolet radiation and stripping the protective coating from unmasked portions of the airfoil.

Abstract: A new process and an improved process for fabricating device layers with ultrafine features. In one embodiment a device layer to be patterned is deposited above a substrate and a photoresist layer is deposited above that device layer. A reticle having a first transparent layer and a second opaque layer is used to pattern the photoresist layer. The reticle includes a first region with a first phase and a second region with a second phase such that the incident radiation is shifted when passing through the reticle. The second reticle layer is disposed above the first reticle layer and proximate to the location where the first region transitions to the second region of the first reticle layer. A stepper is used to expose the photoresist to radiation through the reticle. The critical dimensions of the device layer being patterned are controlled by adjusting the partial coherence of the stepper during exposure.

Abstract: A novel reticulated array comprises islands of ceramic (e.g. BST 40) which are fabricated from novel materials using unique methods of patterning. A front side optical coating (e.g. transparent metal layer 44, transparent organic layer 46 and conductive metallic layer 48) is elevated above the substrate between the ceramic islands. This allows additional material (e.g. polyimide 38) between the optical coating and the substrate above the regions where cavities are to be etched. Etching of the cavities (72) is performed from the back side of the substrate without damaging the front side optical coating. Novel fabrication methods also provide for the convenient electrical and mechanical bonding of each of the massive number of ceramic islands to a signal processor substrate (e.g. Si 80) containing a massive array of sensing circuits.