Using Laser Patents (Class 216/65)
  • Patent number: 6851178
    Abstract: One of the major requirements for higher frequency extendability is to reduce yoke length and inductance in order to have fast saturation. This has been accomplished by using a design that provides a cavity in the lower pole piece inside which is located at least two coils, one on top of the other. A process for manufacturing the device is also described.
    Type: Grant
    Filed: October 24, 2002
    Date of Patent: February 8, 2005
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng Chyi Han, Mao-Min Chen, Pokang Wang, Yimin Guo
  • Patent number: 6847007
    Abstract: A process gas and a process of laser machining, such as laser beam fusion cutting or laser beam welding is provided. A gas mixture that contains at least oxygen and hydrogen, in addition to an inert has, is used as the process gas. The ratio of oxygen to hydrogen in the process gas is hypostoichiometric with respect to the reaction 2 H2+O2+?2 H2O, which causes the process gas to exhibit a reductive effect.
    Type: Grant
    Filed: June 23, 2003
    Date of Patent: January 25, 2005
    Assignee: Linde Aktiengsellschaft
    Inventor: Wolfgang Danzer
  • Patent number: 6846424
    Abstract: A process for removing and/or dry etching noble metal-based material structures, e.g., iridium for electrode formation for a microelectronic device. Etch species are provided by plasma formation involving energization of one or more halogenated organic and/or inorganic substance, and the etchant medium including such etch species and oxidizing gas is contacted with the noble metal-based material under etching conditions. The plasma formation and the contacting of the plasma with the noble metal-based material can be carried out in a downstream microwave processing system to provide processing suitable for high-rate fabrication of microelectronic devices and precursor structures in which the noble metal forms an electrode, or other conductive element or feature of the product article.
    Type: Grant
    Filed: June 5, 2001
    Date of Patent: January 25, 2005
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Thomas H. Baum, Phillip Chen, Frank DiMeo, Jr., Peter C. Van Buskirk, Peter S. Kirlin
  • Patent number: 6841482
    Abstract: A semiconductor is cut by directing a green laser beam of high power, and subsequently directing a UV beam along the cut line. The first beam performs cutting with relatively rough edges and a high material removal rate, and the second beam completes the cut at the edges for the required finish, with a lower material quantity removal.
    Type: Grant
    Filed: October 26, 2001
    Date of Patent: January 11, 2005
    Assignee: Xsil Technology Limited
    Inventor: Adrian Boyle
  • Patent number: 6834429
    Abstract: A method of forming metallization patterns on a block of dielectric material wherein the entire surface area of the dielectric block is encased with a conductive material and unwanted conductive metal is ablatively etched from a designated surface area of the dielectric block to form desired metallized circuit patterns.
    Type: Grant
    Filed: March 9, 2001
    Date of Patent: December 28, 2004
    Assignee: CTS Corporation
    Inventors: Raymond G. Blair, Edward J. Rombach, Randel N. Simons, Wayne D. Pasco
  • Patent number: 6817086
    Abstract: A bilayer mask employed for lift off has a top strip which bridges between first and second bilayer portions and is completely undercut so that when one or more materials is sputter deposited the materials do not form fences abutting recessed edges of a bottom layer in undercuts below a top layer. Sacrificial protective layers are formed on a sensor and lead layers for protecting these components while overlapping portions of these materials on the top of the sensor formed during deposition can be removed by ion beam sputtering, after which the sacrificial protective layers can be removed by ion milling or reactive ion etching.
    Type: Grant
    Filed: August 12, 2002
    Date of Patent: November 16, 2004
    Assignee: International Business Machines Corporation
    Inventors: Jennifer Qing Lu, Scott Arthur MacDonald, Hugo Alberto Emilio Santini
  • Publication number: 20040222187
    Abstract: A method of fabricating a polysilicon film by an excimer laser crystallization process is disclosed. First, a substrate with a first region, a second region surrounding the first region, and a third region is provided. An amorphous silicon film is formed on the substrate. A photo-etching process is performed to remove parts of amorphous silicon film in the third region to form an alignment mark. Then, a mask layer is formed on the amorphous silicon film and a second photo-etching process is performed to remove the mask layer in the first region to expose the amorphous silicon film in the first region. After that, an excimer laser irradiation process is performed so that the amorphous silicon film in the first region is crystallized and becomes a polysilicon film.
    Type: Application
    Filed: July 25, 2003
    Publication date: November 11, 2004
    Inventor: Kun-Chih Lin
  • Patent number: 6812152
    Abstract: A method to obtain contamination free surfaces of a material chosen from the group comprising GaAs, GaAlAs, InGaAs, InGaAsP and InGaAs at crystal mirror facets for GaAs based laser cavities. The crystal mirrors facets are cleaved out exposed to an ambient atmosphere containing a material from the group comprising air, dry air, or dry nitrogen ambients. Any oxides and other foreign contaminants obtained during the ambient atmosphere exposure of the mirror facets are removed by dry etching in vacuum. Thereafter, a native nitride layer is grown on the mirror facets by treating them with nitrogen.
    Type: Grant
    Filed: August 9, 2001
    Date of Patent: November 2, 2004
    Assignee: Comlase AB
    Inventors: L. Karsten V. Lindström, N. Peter Blixt, Svante H. Söderholm, Anand Srinivasan, Carl-Fredrik Carlström
  • Patent number: 6809289
    Abstract: A circuit board comprising a dielectric material provided with a conductive layer is drilled with laser operated at an energy density below the ablation threshold of the conductive layer. The method of drilling includes providing on the conductive layer an ablation layer having an ablation threshold near or below that laser energy density, directing the laser at a target area of the ablation layer to ablate portions of the conductive and dielectric layers in the target area, and removing any remaining ablation layer from the conductive layer.
    Type: Grant
    Filed: March 5, 2003
    Date of Patent: October 26, 2004
    Assignee: The Hong Kong Polytechnic University
    Inventors: Kam-Chuen Yung, Tai-Man Yue, Xiang-Yi Fang
  • Patent number: 6808648
    Abstract: Methods and systems for laser etching of optical servo patterns on magnetic data storage media using two or more beams of laser energy produced from a single source of laser energy to produce a servo pattern on the magnetic data storage media. By using two or more etching beams, the time required to produce a servo pattern on the magnetic data storage media can be significantly reduced. Alternatively, each servo track in the servo pattern can be written more than once. The servo patterns thus formed can be read optically or they may be read magnetically using magnetic overwriting (if the servo pattern is formed in a magnetic coating on the media). In either case, the servo patterns are either permanently formed in the media when read optically, or they can be recreated after bulk erasing if they are provided using magnetic overwriting. In yet another alternative, the servo patterns may be read both magnetically and optically, with the magnetic and optical reading occurring simultaneously or sequentially.
    Type: Grant
    Filed: February 8, 2002
    Date of Patent: October 26, 2004
    Assignee: Imation Corp.
    Inventors: Lewis S. Damer, Stephen W. Farnsworth, Robert S. Jackson, Mark P. Lubratt, Robert C. Martin, David M. Perry, John J. Simbal, Daniel P. Stubbs
  • Patent number: 6805751
    Abstract: A method and apparatus for removing minute particles from a surface of a sample are provided that prevent redeposition of the particles onto the surface. By combining thermophoresis with laser assisted particle removal (LAPR), the methods and apparatus remove minute particles (for example, micrometer and nanometer sizes) and assure that they will not redeposit.
    Type: Grant
    Filed: July 23, 2001
    Date of Patent: October 19, 2004
    Assignee: Alkansas State University
    Inventor: Susan Davis Allen
  • Publication number: 20040203257
    Abstract: A processing technique of a semiconductor substrate which can improve a capability of a solid immersion lens in case of processing the semiconductor substrate and forming the solid immersion lens on its surface is provided.
    Type: Application
    Filed: October 31, 2003
    Publication date: October 14, 2004
    Applicant: Renesas Technology Corp.
    Inventors: Takeshi Yoshida, Tohru Koyama, Yoji Mashiko
  • Publication number: 20040159634
    Abstract: A coating composition useful as an electrical insulation layer for metal conductors, particularly wires, that has improved de-coating properties for the partial de-coating of coated conductor by the use of laser irradiation; the coating composition comprises
    Type: Application
    Filed: February 13, 2004
    Publication date: August 19, 2004
    Applicant: E.I. du Pont de Nemours and Company
    Inventors: Gerhard Kiessling, Frank-Rainer Boehm, Hans-Georg Hinderer
  • Patent number: 6766811
    Abstract: An aqueous solution containing sulfuric acid and hydrogen peroxide is used for a soft etchant in a soft etching step in a smear removing process performed prior to a catalyst applying process for chemical copper plating after formation of via holes through an insulating layer of a multi-layer substrate by irradiation of laser. The concentration of sulfuric acid is 2.4 times or less than the concentration of hydrogen peroxide. Preferably, the concentration of sulfuric acid is in a range of 9 to 90 g/l, and the concentration of sulfuric acid is lower than the concentration of hydrogen peroxide. More preferably, the concentration of sulfuric acid is in a range of 9 to 18 g/l, and the concentration of hydrogen peroxide is in a range of 33 to 38.5 g/l. As a result, smear can be certainly removed without excessively etching a conductive layer in the smear removing process.
    Type: Grant
    Filed: August 7, 2002
    Date of Patent: July 27, 2004
    Assignee: Kabushiki Kaisha Toyota Jidoshokki
    Inventors: Toshihisa Shimo, Kyoko Kumagai, Toshiki Inoue, Yoshifumi Kato, Takashi Yoshida, Masanobu Hidaka
  • Patent number: 6764747
    Abstract: A circuit board comprising a resin molded article which includes a metal powder coated by an insulation film and a metal conductor which is formed by metal deposition over a circuit pattern drawn by laser beam irradiation on the surface of the resin molded article through electroless plating, and the method of producing the same.
    Type: Grant
    Filed: December 27, 2002
    Date of Patent: July 20, 2004
    Assignee: Mitsui Chemicals, Inc.
    Inventors: Toshiya Urakawa, Youhei Suzuki, Kunihiro Inada, Yasuyuki Kawano
  • Publication number: 20040126704
    Abstract: A method for manufacturing thin-film chip resistors, in which method a resistor layer (14) and a contact layer (15, 16) are applied onto the upper surface of a substrate (10) and structured using laser light so as to form on said substrate (10) a plurality of adjacent, separate resistor lands (24) having a predetermined approximate resistance value, allows the simplified and cheap manufacturing by performing the electrical insulation of the resistor elements (24) and the structuring of the individual resistor lands (24) for the entire resistor land simultaneously by means of a laser-lithographic direct exposure method.
    Type: Application
    Filed: August 26, 2003
    Publication date: July 1, 2004
    Inventors: Wolfgang Werner, Horst Wolf, Reiner Wilhelm Kuehl
  • Patent number: 6754951
    Abstract: A method of drilling a circuit substrate. A circuit substrate including at least a core layer and a metal layer covering one or both surfaces of the core layer is provided. A half-etching process is performed by etching the metal layer on the circuit substrate with an etchant to reduce the thickness of the metal layer. A surface treatment on the surface of the metal layer A via is formed in the circuit substrate by laser.
    Type: Grant
    Filed: July 31, 2001
    Date of Patent: June 29, 2004
    Assignees: Advanced Semiconductor Engineering Material, Inc., Advanced Semiconductor Engineering, Inc.
    Inventors: Sheng-Chun Ho, Min-Liang Hsiao
  • Publication number: 20040118811
    Abstract: A method for making a forming structure. In one embodiment the method comprises the steps of (a) providing a base material having a thickness; (b) providing a laser source; (c) laser etching a plurality of spaced-apart apertures, each aperture extending through the entire thickness of the base material, such that the non-laser-etched portions of the base material define a continuous network; and (d) laser etching the continuous network to remove material in a pattern that defines a plurality of protrusions, each protrusion being generally columnar and pillar-like. The plurality of protrusions can be laser etched first, before laser etching the plurality of spaced-apart apertures. The base material can be cylindrical-shaped and the laser etching can be accomplished in a continuous process by rotating the cylindrical-shaped base material as a laser source is operatively translated while laser etching a path similar to “threads” of a screw.
    Type: Application
    Filed: March 14, 2003
    Publication date: June 24, 2004
    Applicant: The Procter & Gamble Company
    Inventors: Keith Joseph Stone, Brian Francis Gray, Julie Ann O'Neil, Timothy Paul Fiedeldey
  • Patent number: 6743481
    Abstract: A multilayer coating of fullerene molecules is deposited on a substrate, and layers of the multilayer coating are removed leaving an approximate monolayer coating of fullerene molecules on the substrate. In some embodiments, a beam generator, such as an ion beam, electron beam or laser generator, produces a beam arranged to break the weaker fullerene-to-fullerene intermolecular bond of the multilayer coating and inadequate to break the stronger fullerene-to-substrate association/bond of the coating. The beam is directed at the multilayer coating to break the fullerene-to-fullerene intermolecular bond. In other embodiments, the monolayer of fullerene molecules is formed by applying a solvent to the multilayer coating to break the fullerene-to-fullerene intermolecular bond of the multilayer coating.
    Type: Grant
    Filed: May 31, 2001
    Date of Patent: June 1, 2004
    Assignee: Seagate Technology LLC
    Inventors: Joel W. Hoehn, John W. Dykes, James E. Angelo, William D. Mosley, Richard T. Greenlee, Brian W. Karr
  • Patent number: 6736988
    Abstract: A copper-clad board suitable for making a hole with a carbon dioxide gas laser, which copper-clad board is obtained by disposing a double-side-treated copper foil provided with a metallic-treatment layer having a high absorption rate of a carbon dioxide gas laser energy on at least one surface, at least on an outer layer of a thermosetting resin composition layer such that the metallic-treatment layer is formed on a shiny surface of the copper foil which shiny surface is to be a surface layer, and laminate-forming the double-side-treated copper foil and the thermosetting resin composition layer under heat and pressure, to make an alloy of the metallic-treatment layer and the copper by the above heating, a method of making hole in the above copper-clad board and a printed wiring board comprising the above copper-clad board.
    Type: Grant
    Filed: October 31, 2000
    Date of Patent: May 18, 2004
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Morio Gaku, Nobuyuki Ikeguchi, Yoshihiro Kato, Taro Yoshida
  • Patent number: 6719916
    Abstract: Many integrated circuits require a multilayer structure which contains layer of an organic or polymeric material with a patterned metallic layer on it. Laser patterning has many favorable characteristics but it also damages the organic or polymeric material. A novel method is disclosed that makes possible laser patterning of conductive metal electrode deposited on top of an organic and/or polymeric material without significant ablation of the organic and/or polymeric material. The method can achieve higher patterning resolution, resulting in higher quality integrated circuits. The method is based on the application of a thin coating of an inexpensive anti-reflector deposited on top of the desired metal electrode which in turn lies on the organic and/or polymeric material. The thin anti-reflecting coating allows the use of a lower fluence laser for ablation of metal layer without damaging the underlying organic and/or polymeric material.
    Type: Grant
    Filed: April 16, 2002
    Date of Patent: April 13, 2004
    Assignee: National Research Council of Canada
    Inventors: Jan J. Dubowski, Ye Tao, Christophe Py
  • Patent number: 6708404
    Abstract: A method of making a high-density copper-clad multi-layered printed wiring board having a reliable through hole including providing a stacked assembly including three copper foil layers and at least two resin layers; providing an auxiliary material on a top surface of the stacked assembly and providing a backup sheet on a bottom surface of the stacked assembly to form an assembly; subjecting the top surface of the assembly to pulsed oscillation from a carbon dioxide laser to form at least one through-hole to produce a pulsed assembly; reducing the thickness of the front and reverse copper foil layers and simultaneously with reducing, removing copper foil burrs, to produce a cleaned assembly; and plating the cleaned assembly with copper to produce the high-density copper-clad multi-layered printed wiring board.
    Type: Grant
    Filed: June 14, 2000
    Date of Patent: March 23, 2004
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Morio Gaku, Nobuyuki Ikeguchi, Yoshihiro Kato, Hiroki Aoto
  • Publication number: 20040040655
    Abstract: In a state where a process gas including SF.sub.6 and O.sub.2 is supplied in a chamber, a laser light irradiator provided outside the chamber irradiates a laser light onto a substrate. At the portion of the substrate onto which the laser light is irradiated, the material that makes up the substrate is excited and converted into a gaseous substance by reacting with the process gas. The temperature of the substrate placed on a stage is kept at a predetermined temperature since a temperature adjuster supplies a chiller to a coolant flow passage provided inside the stage.
    Type: Application
    Filed: September 2, 2003
    Publication date: March 4, 2004
    Applicant: Tokyo Electron Limited
    Inventor: Mitsuhiro Yuasa
  • Publication number: 20040026370
    Abstract: A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.
    Type: Application
    Filed: December 27, 2002
    Publication date: February 12, 2004
    Inventors: Bernd Lindner, Steffen Wickner
  • Patent number: 6686290
    Abstract: The surface of a substrate having a transmission index is irradiated with a beam of atoms having a slow enough velocity to be adsorbed on the substrate. A laser beam whose frequency is detuned by 1 to 10 gigahertz from the resonant frequency of the atoms is projected onto the substrate at an angle, producing total reflection. The atom beam is reflected at regions at which an intensity of an evanescent wave emitted at this time from the substrate surface is high, and adsorbed at regions where the intensity is low, thereby achieving atomic fabrication patterns on a substrate. By using a hologram image to create the pattern, it is possible to form an atomic fabrication patterns in which the size of features correspond to the diameter of the laser beam, enabling the size to be reduced to the diffraction limit of the laser light.
    Type: Grant
    Filed: August 27, 2001
    Date of Patent: February 3, 2004
    Assignee: Communications Research Laboratory
    Inventor: Ryuzo Ohmukai
  • Publication number: 20040016095
    Abstract: A method of laser milling an aperture in a workpiece for use with manufacturing ink-jet nozzles includes initially illuminating a surface of the workpiece with a laser beam at a point within an outer perimeter of a desired aperture and a distance away from the outer perimeter sufficient to substantially avoid initial ablation of the outer perimeter. The laser beam is driven substantially in the direction of the outer perimeter at a variable rate controlled to avoid deformation of the outer perimeter. Material of the workpiece is ablated in a pattern designed to substantially remove material within the outer perimeter, thereby forming the aperture.
    Type: Application
    Filed: October 8, 2002
    Publication date: January 29, 2004
    Inventors: Xinbing Liu, Chen-Hsiung Cheng, Dan Hogan, Nancy Edwards
  • Publication number: 20030213770
    Abstract: A laser processing method capable of performing fine and highly accurate processing by low energy is obtained.
    Type: Application
    Filed: February 21, 2003
    Publication date: November 20, 2003
    Inventors: Yasufumi Yamada, Katsumi Midorikawa, Hiroshi Kumagai
  • Patent number: 6641745
    Abstract: A method of forming a manifold through a substrate of a printhead substructure is disclosed. The substrate has an ink reservoir-facing side and an opposing transducer-supporting side. The transducer-supporting side of the substrate is introduced to an etchant. A laser beam is used to irradiate the etchant contacting side of the substrate. The irradiated areas of the substrate are thereby etched to define a first portion of the manifold therein. A second portion of the manifold is formed, preferably by sand blasting, to connect to the first portion. A printhead substructure that includes a substrate having a manifold formed according to the method is also disclosed.
    Type: Grant
    Filed: November 16, 2001
    Date of Patent: November 4, 2003
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Kee Cheong Tan, Pean Lim, Kiong Chin Chng
  • Publication number: 20030198756
    Abstract: A method for working a parting agent layer applied to a substrate material, in which the parting agent layer is acted upon by the radiation energy of a TEA CO2 laser, so that the parting agent layer is heated at least partly to above the destruction temperature of the parting agent and the parting agent therefore loses its parting properties. The substrate material can be particularly a glass forming a vehicle window or a glass powder coat or rubber applied to a window.
    Type: Application
    Filed: April 17, 2003
    Publication date: October 23, 2003
    Applicant: JENOPTIK Automatisierungstechnik GmbH
    Inventors: Juergen Weisser, Norbert Preuss
  • Publication number: 20030155328
    Abstract: The described embodiments relate to methods and systems for laser micromachining a substrate. One exemplary embodiment positions a substrate in an open air environment. The substrate has a thickness defined by opposing first and second surfaces. The substrate can be cut by directing a laser beam at the first surface of the substrate and introducing an assist gas proximate to a region of the substrate contacted by the laser beam.
    Type: Application
    Filed: February 15, 2002
    Publication date: August 21, 2003
    Inventors: Mark C. Huth, Jeffrey R. Pollard, Graeme Scott
  • Publication number: 20030127428
    Abstract: A method for separating chips from a diamond wafer comprising a substrate, a chemically vapor-deposited diamond layer, and microelectronic elements, with the microelectronic elements protected from thermal damage and degradation caused by the thermally decomposed cuttings produced during the processing steps. (1) Front-side grooves 6 are formed on the chemically vapor-deposited diamond layer 2 by laser processing using a laser such as a YAG, CO2, or excimer laser each having a large output so that the grooves 6 can have a depth 1/100 to 1.5 times the thickness of the diamond layer. (2) The thermally decomposed cuttings produced during the laser processing are removed by using a plasma. (3) Back-side grooves 9 are formed on the substrate 1 by dicing such that the back-side grooves 9 are in alignment with the front-side grooves 6. (4) The diamond wafer 4 is divided into individual chips 10 by applying mechanical stresses.
    Type: Application
    Filed: May 13, 2002
    Publication date: July 10, 2003
    Inventors: Satoshi Fujii, Noboru Gotou, Tomoki Uemura, Toshiaki Saka, Katsuhiro Itakura
  • Patent number: 6589436
    Abstract: Provided is a reactive ion etching (RIE) method for use in altering the flatness of a slider, whereby a slider or row of sliders is placed within a RIE apparatus. The apparatus comprises essentially an electrode within a chamber having an inlet and an outlet. The electrode is controlled by a bias power source. A source power is provided to the chamber to generate the plasma, wherein a gas or gas mixture is first introduced to the chamber and the source power is adjusted to maximize the plasma composition of ions and reactive neutral species. The ions and reactive neutral species are generated from reactive chemical species such as CHF3 and other F-containing species. An inert gas such as Argon may also be present. Typically, TiC within the Al2O3 matrix of the slider substrate surface is etched at a faster rate than other substrate species.
    Type: Grant
    Filed: June 14, 2000
    Date of Patent: July 8, 2003
    Assignee: International Business Machines Corporation
    Inventors: Jila Tabib, Yiping Hsiao, Richard Hsiao, Richard T. Campbell, Ciaran A. Fox
  • Publication number: 20030121887
    Abstract: The present invention is a method and apparatus for the synthesis of multi-component substances, comprising entities of at least two elements, molecules, grains, crystals, structural units, or phases of matter, in which the scale of the distribution of the elements, molecules, or phases of matter may range from on the order of nanometers or less, to about one millimeter, depending upon the specific materials and process conditions that are chosen. The method and apparatus of the present invention further provides processes for preparing these compositions of matter as thin films or particles.
    Type: Application
    Filed: July 1, 2002
    Publication date: July 3, 2003
    Inventors: James F. Garvey, Gary S. Tompa, Stuart G. MacDonald, Robert L. DeLeon
  • Patent number: 6585909
    Abstract: An oxide for use in a bolometer with an oxide thin-film formed is manufactured on an insulating substrate. Metal organic compound is dissolved in solvent to form solution during manufacturing the oxide thin-film. The solution is applied on the insulating substrate, and the applied solution is dried. A bond between carbon and oxygen is cut and decomposed by irradiating a laser ray with wavelength of 400 nm or less. A generated oxide is crystallized.
    Type: Grant
    Filed: October 31, 2001
    Date of Patent: July 1, 2003
    Assignees: National Institute of Advanced Industrial Science & Technology, NEC Corporation
    Inventors: Tetsuo Tsuchiya, Susumu Mizuta, Toshiya Kumagai, Tsutomu Yoshitake, Yuichi Shimakawa, Yoshimi Kubo
  • Patent number: 6585904
    Abstract: A process is revealed whereby resistors can be manufactured integral with a printed circuit board by plating the resistors onto the insulative substrate. Uniformization of the insulative substrate through etching and oxidation of the plated resistor are discussed as techniques for improving the uniformity and consistency of the plated resistors. Trimming and baking are also disclosed as methods for adjusting and stabilizing the resistance of the plated resistors.
    Type: Grant
    Filed: February 15, 2001
    Date of Patent: July 1, 2003
    Inventors: Peter Kukanskis, Dennis Fritz, Frank Durso, Steven Castaldi, David Sawoska
  • Patent number: 6579660
    Abstract: A blank printed circuit board (10), for creating a circuit pattern thereon by direct imaging with infrared radiation. The blank printed circuit board (10) includes in sequence an insulating substrate (20), a metal layer (21), a resist layer (22) and a mask layer (23).
    Type: Grant
    Filed: July 27, 2001
    Date of Patent: June 17, 2003
    Assignee: Creo Il Ltd.
    Inventor: Murray Figov
  • Patent number: 6566169
    Abstract: Particles are removed from the surface of a substrate. Respective position coordinates of the particles on the surface are determined. A beam of electromagnetic energy is directed at the coordinates of each of the particles in turn, such that absorption of the electromagnetic energy at the surface causes the particles to be dislodged from the surface substantially without damage to the surface itself.
    Type: Grant
    Filed: October 16, 2001
    Date of Patent: May 20, 2003
    Assignee: Oramir Semiconductor Equipment Ltd.
    Inventors: Yoram Uziel, Natalie Levinsohn, David Yogev, Yehuda Elisha, Yitzhak Ofer, Lev Fris Man, Jonathan Baron
  • Patent number: 6555294
    Abstract: A process for collectively making integrated magnetic heads with a bearing surface obtained by photolithography. According to the process, on a wafer is deposited a plurality of heads, a mask defining the profile of the bearing surfaces and the wafer is collectively engraved in the vicinity of the pole pieces of the heads. Such a process may find particular application to the making of magnetic heads.
    Type: Grant
    Filed: January 29, 2001
    Date of Patent: April 29, 2003
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean-Baptiste Albertini, Pierre Gaud, Gérard Barrois, Henri Sibuet
  • Patent number: 6541189
    Abstract: A method of marking a polymer-based laminate including a core layer, a cover layer on at least one side of said core layer and an adhesive layer acting between the core layer and the cover layer is provided. The core, adhesive and cover layers have different radiation transmission coefficients. The method comprises the step of selectively irradiating the laminate with laser radiation having a fluence sufficient to mark the adhesive layer at selected locations while maintaining the cover layer intact.
    Type: Grant
    Filed: September 15, 1999
    Date of Patent: April 1, 2003
    Assignee: Agra Vadeko Inc.
    Inventors: Omar Caporaletti, Nikolay Stoev
  • Patent number: 6530147
    Abstract: This invention concerns electronic substrates comprising a non-woven filler material and a resin material. The present invention also includes electronic products manufactured from the electronic substrates of this invention including, but not limited to prepregs, metal clad laminates, and printed wiring boards with and without lased via holes. The present invention further includes a method of manufacturing printed built-up wiring boards including the steps of forming a prepreg and forming at least one via in the prepreg.
    Type: Grant
    Filed: November 7, 2000
    Date of Patent: March 11, 2003
    Assignee: Honeywell International Inc.
    Inventors: David R. Haas, Chengzeng Xu, Mavyn McAuliffe
  • Patent number: 6527967
    Abstract: A method of forming a thin-piece sample for use in an electron microscope. The ion beam scanning used for etching a sample block to form a thin-wall portion is initiated from the outer perimeter of two opposite sides of the sample block to be formed, one side at a time, and the ion beam is directed from the outer perimeter of the sample block inwards towards the center of the sample block. When the two sides of the sample block are etched from the outside into the sample block, a thin wall is produced at the interior portion of the sample block. Also, a plurality of samples may be set in a known positional relationship, and a series of forming functions, including ion beam scanning, may be programmed for automation, allowing a plurality of samples to be formed all at one time easily and efficiently.
    Type: Grant
    Filed: July 16, 1999
    Date of Patent: March 4, 2003
    Assignee: Seiko Instruments, Inc.
    Inventor: Hidekazu Suzuki
  • Patent number: 6489590
    Abstract: A method of fast and complete laser removal of inorganic and organic foreign material, including particles down to submicron-sizes and atomic contaminants, such as heavy metals and alkaline elements, from a substrate without any damage to the substrate, carried out by UV laser irradiation of the substrate surface in a reactive oxygen based gas, which comprises carrying out the removal process in the presence of gas containing F and/or Cl atoms in its molecules.
    Type: Grant
    Filed: March 11, 1999
    Date of Patent: December 3, 2002
    Inventors: Boris Buyaner Livshits, Menachem Genut, Ofer Tehar-Zahav, Eliezer Iskevitch
  • Patent number: 6471881
    Abstract: A method is disclosed for providing a TBC system including grooves or other features between the bond coat/substrate and the ceramic thermally insulating layer. The features are initially provided by selectively removing material to define the features, for example by laser. Any disturbed surface layer, e.g., re-cast material in the case of a laser or plastically worked material in the case of machining, is then chemically removed, leaving the remaining material with a microstructure of a more uniform geometry, and free of disturbed material. The ceramic layer is then applied. TBC systems using the method show improved durability, with lives up to 4× longer than prior TBC systems.
    Type: Grant
    Filed: November 23, 1999
    Date of Patent: October 29, 2002
    Assignee: United Technologies Corporation
    Inventors: Yan Chai, Gary M. Lomasney, Keith Douglas Sheffler
  • Patent number: 6458709
    Abstract: A method for fabricating a repair fuse box of a semiconductor device is disclosed. An etching stop polysilicon layer formed at a belt shape in edge portions of a repair fuse box is broken during a repair etching process without substantial departure from prior art methods for fabricating a repair fuse box of a semiconductor device. Thus, it is possible to improve repair yield of the semiconductor device.
    Type: Grant
    Filed: January 2, 2001
    Date of Patent: October 1, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Eul Rak Kim, Joong Shik Shin
  • Publication number: 20020088770
    Abstract: Methods and systems for laser etching of optical servo patterns on magnetic data storage media using two or more beams of laser energy produced from a single source of laser energy to produce a servo pattern on the magnetic data storage media. By using two or more etching beams, the time required to produce a servo pattern on the magnetic data storage media can be significantly reduced. Alternatively, each servo track in the servo pattern can be written more than once. The servo patterns thus formed can be read optically or they may be read magnetically using magnetic overwriting (if the servo pattern is formed in a magnetic coating on the media). In either case, the servo patterns are either permanently formed in the media when read optically, or they can be recreated after bulk erasing if they are provided using magnetic overwriting. In yet another alternative, the servo patterns may be read both magnetically and optically, with the magnetic and optical reading occurring simultaneously or sequentially.
    Type: Application
    Filed: February 8, 2002
    Publication date: July 11, 2002
    Inventors: Lewis S. Damer, Stephen W. Farnsworth, Robert S. Jackson, Mark P. Lubratt, Robert C. Martin, David M. Perry, John J. Simbal, Daniel P. Stubbs
  • Patent number: 6413868
    Abstract: Disclosed is a manufacturable silicon-based modular integrated circuit structure having performance characteristics comparable to high frequency GaAs-based integrated circuit structures, comprising materials and made in process steps which are compatible with existing low cost silicon-based integrated circuit processing.
    Type: Grant
    Filed: January 4, 2001
    Date of Patent: July 2, 2002
    Assignee: International Business Machines Corporation
    Inventors: Thomas Adam Bartush, David Louis Harame, John Chester Malinowski, Dawn Tudryn Piciacchio, Christopher Lee Tessler, Richard Paul Volant
  • Patent number: 6414320
    Abstract: The composition analysis by scanning femtosecond ultraprobing (CASFLU) technology scans a focused train of extremely short-duration, very intense laser pulses across a sample. The partially-ionized plasma ablated by each pulse is spectrometrically analyzed in real time, determining the ablated material's composition. The steering of the scanned beam thus is computer directed to either continue ablative material-removal at the same site or to successively remove nearby material for the same type of composition analysis. This invention has utility in high-speed chemical-elemental, molecular-fragment and isotopic analyses of the microstructure composition of complex objects, e.g., the oxygen isotopic compositions of large populations of single osteons in bone.
    Type: Grant
    Filed: May 2, 2000
    Date of Patent: July 2, 2002
    Assignee: The Regents of the University of California
    Inventors: Muriel Y. Ishikawa, Lowell L. Wood, E. Michael Campbell, Brent C. Stuart, Michael D. Perry
  • Patent number: 6406636
    Abstract: Wafer-to-wafer bonding using, e.g., solder metal bonding, glass bonding or polymer (adhesive) bonding is improved by profiling one or both of the wafer surfaces being bonded to define microstructures therein. Profiling means providing other than the conventional planar bonding surface to define cavities therein. The bonding material fills the cavities in the microstructures. For instance, a system of ridges and trenches (e.g. in cross-section vertical, slanted, key-holed shaped, or diamond-shaped) are microstructures that increase the surface area of the wafers to which the bonding material can adhere. Use of the key-hole shaped or diamond-shaped profile having a negative slope at the trench interior substantially increases the bonding force.
    Type: Grant
    Filed: June 2, 1999
    Date of Patent: June 18, 2002
    Assignee: MegaSense, Inc.
    Inventor: Vladimir I. Vaganov
  • Patent number: 6402970
    Abstract: A method of manufacturing a support circuit includes providing a conductive layer with top and bottom surfaces, providing a top etch mask on the top surface that includes an opening that exposes a portion of the top surface, providing a bottom etch mask on the bottom surface that includes an opening that exposes a portion of the bottom surface, applying an etch to the exposed portion of the top surface through the opening in the top etch mask, thereby etching partially but not completely through the conductive layer and forming a recessed portion in the conductive layer below the top surface, forming an insulative base on the recessed portion without forming the insulative base on the top surface, and applying an etch to the exposed portion of the bottom surface through the opening in the bottom etch mask, thereby forming a through-hole in the recessed portion that extends to and is covered by the insulative base.
    Type: Grant
    Filed: August 22, 2000
    Date of Patent: June 11, 2002
    Inventor: Charles W. C. Lin
  • Patent number: 6397466
    Abstract: A method for manufacturing an orifice plate with a plate material having a through hole arranged to become an orifice for discharging liquid comprises the steps of arranging a resin layer in a position corresponding to the through hole on the surface of a conductive substrate in a configuration corresponding to the through hole in a thickness corresponding at least to the lenght of the through hole, forming a metallic layer by means of electro-forming on the exposed surface of a portion of the conductive substrated corresponding to the plate material in a thickness corresponding to the thickness of the plate material in order to obtain the metallic layer in a state where the resin layer is filled in the through hole portion, applying water repellent resin to the surface of the metallic layer having the resin layer filled therein, peeling off the metallic layer from the conductive substrate together with the resin layer to obtain the plate material in a state where the through hole portion is filled with the r
    Type: Grant
    Filed: June 28, 1999
    Date of Patent: June 4, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shuji Koyama, Junji Tatsumi, Ken Ikegame, Hiroaki Mihara, Miki Ito