Using Laser Patents (Class 216/65)
  • Patent number: 6395191
    Abstract: In order to protect a paper-thin valuable document or identification document on which an identification mark has been placed, for example by means of a printing technique or by a laser technique, in such a way that counterfeiting is extremely difficult, at least part of said identification mark is repeated at another point by changing the thickness of the document locally. At least part of the identification mark is thus clearly liked to the paper substrate.
    Type: Grant
    Filed: January 22, 1999
    Date of Patent: May 28, 2002
    Assignee: Lean B.V.
    Inventor: Karel Johan Schell
  • Patent number: 6391213
    Abstract: A method for manufacturing a magnetic disk comprises the acts of a) applying a laser beam to at least a portion of a silica-containing substrate, thereby forming a set of bumps or ridges; b) etching the substrate to remove the ridges and form a set of valleys where the ridges were previously formed; and c) depositing an underlayer, a magnetic layer, and a protective overcoat on the substrate. A lubricant layer is then formed on the disk. The valleys formed in the substrate reduce stiction exhibited by the magnetic disk. However, the valleys do not interfere with the fly height of a read-write head used in conjunction with the magnetic disk.
    Type: Grant
    Filed: September 7, 1999
    Date of Patent: May 21, 2002
    Assignee: Komag, Inc.
    Inventor: Andrew Homola
  • Patent number: 6391791
    Abstract: A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a photomask by forming patterns to be transferred to a wafer on a photomask blank. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.
    Type: Grant
    Filed: July 27, 1999
    Date of Patent: May 21, 2002
    Assignees: Ulvac Coating Corporation, Mitsubishi Denki Kabushiki Kaisha
    Inventors: Takaei Sasaki, Noriyuki Harashima, Satoshi Aoyama, Shouichi Sakamoto
  • Patent number: 6380078
    Abstract: Method for fabrication of damascene interconnects and related structures is disclosed. A sacrificial layer is formed over a low-k dielectric. Trenches are then etched inside the sacrificial layer and the low-k dielectric. The trenches are then filled with metal. During a first CMP process, excess metal over the sacrificial layer is removed. During a second CMP process, the sacrificial layer over the low-k dielectric and any remaining excess metal are removed. By the end of the second CMP process substantially all of the sacrificial layer and all of the excess metal are removed. In this manner, the trenches in the low-k dielectric are filled with metal where the metal surface is substantially flush with the surface of the low-k dielectric.
    Type: Grant
    Filed: May 11, 2000
    Date of Patent: April 30, 2002
    Assignee: Conexant Systems, Inc.
    Inventors: Q. Z. Liu, Lawrence E. Camilletti
  • Patent number: 6375860
    Abstract: The occurrence of internally-formed contaminants or negatively-charged particulates within a plasma is minimized by preventing such from becoming trapped in the plasma. The plasma is formed in a plasma chamber having control electrodes and reference electrodes. The control electrodes are biased with a negative potential. The plasma assumes a potential more positive than the control electrodes. The reference electrodes are then biased to be more positive than the plasma. Hence, negative ions or negatively-charged particulates in the plasma are attracted to the more positive reference electrodes, and thus escape the plasma without being trapped therein, and are not available to serve as nucleation or agglomeration points for contaminants. A pair of Helmholtz coils produce a magnetic field having magnetic field lines that run longitudinally between the control electrodes.
    Type: Grant
    Filed: March 10, 1995
    Date of Patent: April 23, 2002
    Assignee: General Atomics
    Inventors: Tihiro Ohkawa, Stanley I. Tsunoda
  • Publication number: 20020040758
    Abstract: A method for manufacturing a printed wiring board, comprising the step of forming a hole by an energy beam such as a laser beam, wherein formation of a resin film by a substrate-material resin oozing to the inner-wall surface of a hole is prevented, by lowering the water-absorption percentage of a substrate material through the dehumidifying step as the preprocess of the hole-forming step for forming a through-hole or non-through-hole for interconnecting circuits formed on both sides or in multiple layers, thereby it is possible to realize high-quality hole-formation by preventing a defective resin film formation and obtain a high-reliability printed wiring board.
    Type: Application
    Filed: September 15, 1999
    Publication date: April 11, 2002
    Inventors: SHIGERU YAMANE, TOSHIHIRO NISHII, SHINJI NAKAMURA, MASAYUKI SAKAI
  • Patent number: 6365061
    Abstract: Methods and systems for laser etching of optical servo patterns on magnetic data storage media using two or more beams of laser energy produced from a single source of laser energy to produce a servo pattern on the magnetic data storage media. By using two or more etching beams, the time required to produce a servo pattern on the magnetic data storage media can be significantly reduced. Alternatively, each servo track in the servo pattern can be written more than once. The servo patterns thus formed can be read optically or they may be read magnetically using magnetic overwriting (if the servo pattern is formed in a magnetic coating on the media). In either case, the servo patterns are either permanently formed in the media when read optically, or they can be recreated after bulk erasing if they are provided using magnetic overwriting. In yet another alternative, the servo patterns may be read both magnetically and optically, with the magnetic and optical reading occurring simultaneously or sequentially.
    Type: Grant
    Filed: February 17, 1999
    Date of Patent: April 2, 2002
    Assignee: Imation Corp.
    Inventors: Lewis S. Damer, Stephen W. Farnsworth, Robert S. Jackson, Mark P. Lubratt, Robert C. Martin, David M. Perry, John J. Simbal, Daniel P. Stubbs
  • Patent number: 6362453
    Abstract: A method of etching a surface of a transparent solid material with a laser beam, wherein the surface is irradiated with the laser beam having a fluence of 0.01-100 J/cm2/pulse while maintaining a fluid capable of absorbing the laser beam in contact with an opposite surface of the solid material.
    Type: Grant
    Filed: March 15, 1999
    Date of Patent: March 26, 2002
    Assignee: Director-General of Agency of Industrial Science and Technology
    Inventors: Jun Wang, Hiroyuki Niino, Akira Yabe
  • Patent number: 6358427
    Abstract: An invisible information mark is provided on a facet of a diamond gemstone by applying a plasma resist to the exposed surface of the gemstone, applying an electrically conducting layer of metal to the region where the information mark is to be formed, ablating a selected zone of the metal and resist layers by ultraviolet laser thus forming a mask on the surface of the facet, electrically connecting the metal layer and plasma etching the facet through the mask, thus forming a mark of appropriate depth on the surface of the gemstone.
    Type: Grant
    Filed: February 9, 2000
    Date of Patent: March 19, 2002
    Assignee: Gersan Establishment
    Inventors: James Gordon Charters Smith, Keith Barry Guy, Graham Ralph Powell, Michael Peter Gaukroger
  • Patent number: 6350391
    Abstract: A method and apparatus for accelerating a laser stripping process carried out in a reactive gas mixture, comprising carrying out the stripping process in the presence of an accelerating effective amount of NxOy gas.
    Type: Grant
    Filed: April 28, 1998
    Date of Patent: February 26, 2002
    Assignee: Oramir Semiconductor Equipment Ltd.
    Inventors: Boris Livshits, Menachem Genut, Ofer Tehar-Zahav
  • Patent number: 6350386
    Abstract: A method of manufacturing a support circuit includes providing a conductive layer with top and bottom surfaces, providing a top etch mask on the top surface that includes an opening that exposes a portion of the top surface, providing a bottom etch mask on the bottom surface that includes an opening that exposes a portion of the bottom surface, applying an etch to the exposed portion of the top surface through the opening in the top etch mask thereby etching partially but not completely through the conductive layer and forming a recessed portion in the conductive layer below the top surface, forming an insulative base on the recessed portion without forming the insulative base on the top surface, applying an etch to the exposed portion of the bottom surface through the opening in the bottom etch mask thereby forming a routing line in the recessed portion, applying an etch to the insulative base to form an opening in the insulative base that exposes a portion of the routing line, and applying an etch to the ex
    Type: Grant
    Filed: September 20, 2000
    Date of Patent: February 26, 2002
    Inventor: Charles W. C. Lin
  • Patent number: 6348158
    Abstract: In a plasma processing method, a plasma is generated using a process gas, and an electron beam is injected into the plasma to control an electron energy distribution in the plasma. Then, a semiconductor substrate is processed using the plasma with controlled electron energy distribution.
    Type: Grant
    Filed: July 22, 1999
    Date of Patent: February 19, 2002
    Assignee: NEC Corporation
    Inventor: Seiji Samukawa
  • Publication number: 20020011463
    Abstract: A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.
    Type: Application
    Filed: January 24, 2001
    Publication date: January 31, 2002
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Peter C. Van Buskirk, Frank DiMeo, Peter S. Kirlin, Thomas H. Baum
  • Patent number: 6338804
    Abstract: There is provided a method for removing conductive portions, comprising the steps of: a first process for removing a conductive portion formed on a dielectric using a laser; and a second process for removing an affected layer produced in the removed portion by the laser using a short pulse laser. According to the above described method, the number of steps therein is reduced, conductive portions are removed without using a large number of apparatuses, and deterioration of “Qo” does not occur.
    Type: Grant
    Filed: August 9, 1999
    Date of Patent: January 15, 2002
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Toru Kurisu, Takashi Ikemoto
  • Publication number: 20020000370
    Abstract: The use of ion beam processing in preparation of a substrate's surfaces, particularly a polyimide film such as Upilex®-SS, prior to depositing a metal on the substrate surfaces. In one aspect, the ion beam processing can be used to remove relatively unique forms of surface contaminants without requiring additional cleaning by traditional methods such as chemical or plasma cleaning. In another aspect, the ion beam processing utilizing an anode layer ion source can be used to prepare polyimide films prior to metal deposition to produce substrates having surprisingly good peel strengths. In still another aspect, ion beam processing can be used to minimize differences in surface characteristics between opposite sides of a substrate.
    Type: Application
    Filed: August 4, 1999
    Publication date: January 3, 2002
    Inventors: RICHARD J. POMMER, GLEN ROETERS, STEPHEN M. AVERY
  • Patent number: 6335208
    Abstract: A decapsulation apparatus 100 has a laser 8 that removes plastic encapsulant from a device 24. Chamber 20 is sealed. Exhaust port 9 removes debris and fumes. The device 24 is positioned and scanned using an X,Y table 2. A hinged end 4 rotates the device to an acute angle of incidence with respect to a laser 8. Endpoint detector 10 senses the exposed integrated circuit and moves or shuts down the laser 8.
    Type: Grant
    Filed: May 10, 1999
    Date of Patent: January 1, 2002
    Assignee: Intersil Americas Inc.
    Inventor: Robert K. Lowry
  • Publication number: 20010050272
    Abstract: A method of fast and complete laser removal of inorganic and organic foreign material, including particles down to submicron-sizes and atomic contaminants, such as heavy metals and alkaline elements, from a substrate without any damage to the substrate, carried out by UV laser irradiation of the substrate surface in a reactive oxygen based gas, which comprises carrying out the removal process in the presence of gas containing F and/or Cl atoms in its molecules.
    Type: Application
    Filed: March 11, 1999
    Publication date: December 13, 2001
    Inventors: BORIS BUYANER LIVSHITS, MENACHEN GENUT, OFER TEHAR-ZAHAV, ELIEZER ISKEVITCH
  • Publication number: 20010045366
    Abstract: An improved method of machining slots and material feed holes in a molding die such as an extrusion die designed to form a honeycomb structure of ceramics employed as a catalyst carrier of a catalytic converter for automotive vehicles. In one of the preferred embodiments, shallow holes are drilled in a die material and subjected to electrochemical machining to remove material from the bottoms of the shallow holes so that they communicate with the material feed holes without any burrs. In the other embodiment, the slots are cut using a rotary cutter in a given order which will balance reaction forces exerted on the cutter from both side walls of each slot to minimize deformation of the cutter during cutting of the slots, thereby preventing the slots from being curved undesirably.
    Type: Application
    Filed: July 13, 2001
    Publication date: November 29, 2001
    Inventors: Naoto Iwata, Masayoshi Fujita, Masahiko Natume, Yoshiaki Mizuno, Mitsutoshi Miyazaki, Toshiji Kondou
  • Patent number: 6322711
    Abstract: A method for forming a thin film resistor. There is first provided an insulator substrate. There is then formed upon the insulator substrate a blanket thin film resistive layer. There is then removed through a non-photolithographic etching method a portion of the blanket thin film resistive layer to form upon the substrate a patterned thin film resistive layer. Finally, there is then formed through a non-photolithographic printing method upon the patterned thin film resistive layer a patterned conductor lead layer. Alternatively, the portion of the blanket thin film resistive layer may be removed to form the patterned thin film resistive layer after the patterned conductor lead layer is formed upon the blanket thin film resistive layer.
    Type: Grant
    Filed: June 22, 1999
    Date of Patent: November 27, 2001
    Assignee: Yageo Corporation
    Inventor: Wood Mu-Yuan Chen
  • Publication number: 20010037994
    Abstract: A method of manufacturing a compound layer, containing a nitrified metal as a major component thereof and having a predetermined microstructure pattern, includes: an ion implantation step for implanting hydrogen ions into a predetermined region of a compound layer formed on a substrate to form an implanted region; and an etching step for selectively etching the implanted region by using a gas containing at least oxygen, to remove the implanted region of the compound layer while maintaining the other region as a microstructure pattern. By introducing a halogen element like fluorine in addition to hydrogen, fabrication of the pattern can be executed more reliably and more easily. As a result, volatility of reaction products produced upon etching the compound layer is enhanced, and micro-loading effects are suppressed.
    Type: Application
    Filed: March 29, 2001
    Publication date: November 8, 2001
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventor: Mizunori Ezaki
  • Publication number: 20010024679
    Abstract: A process for removing and/or dry etching noble metal-based material structures, e.g., iridium for electrode formation for a microelectronic device. Etch species are provided by plasma formation involving energization of one or more halogenated organic and/or inorganic substance, and the etchant medium including such etch species and oxidizing gas is contacted with the noble metal-based material under etching conditions. The plasma formation and the contacting of the plasma with the noble metal-based material can be carried out in a downstream microwave processing system to provide processing suitable for high-rate fabrication of microelectronic devices and precursor structures in which the noble metal forms an electrode, or other conductive element or feature of the product article.
    Type: Application
    Filed: June 5, 2001
    Publication date: September 27, 2001
    Applicant: Advanced Technology Materials Inc.
    Inventors: Thomas H. Baum, Phillip Chen, Frank DiMeo, Peter C. Van Buskirk, Peter S. Kirlin
  • Patent number: 6291797
    Abstract: In a laser processing method for accurately forming a convexo-concave structure on the surface of a glass substrate, a periodic optical intensity distribution of a laser beam is obtained by an interference between diffracted light beams of +1 degree and −1 degree emitted from a phase mask, onto which the laser beam is irradiated, in the vicinity of the emission side of the phase mask, and a glass substrate, on which a thin film is formed, is set in the area where the periodic optical intensity distribution is provided. As a result, the thin film is evaporated or ablated depending on the periodic optical intensity, thereby a diffraction grating, which has the same period as that of the varying optical intensity, is formed on the glass substrate.
    Type: Grant
    Filed: June 4, 1999
    Date of Patent: September 18, 2001
    Assignee: Nippon Sheet Glass Co., Ltd.
    Inventors: Tadashi Koyama, Keiji Tsunetomo
  • Patent number: 6280641
    Abstract: Disclosed are a printed wiring board having micro-via holes highly reliable for conduction and a method of making the micro-via hole by providing a coating or sheet of an organic substance containing 3 to 97% by volume of at least one selected from a metal compound powder, a carbon powder or a metal powder having a melting point of at least 900° C.
    Type: Grant
    Filed: May 28, 1999
    Date of Patent: August 28, 2001
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Morio Gaku, Nobuyuki Ikeguchi, Yasuo Tanaka
  • Patent number: 6267902
    Abstract: A method of removing a coating from the surface of a hole in a metal-based substrate is described. The coating is scored on or near the surface of the hole. The substrate is then treated with a coating-removal solution under conditions suitable for removing the coating without damaging the substrate or any intervening bond layer. The coating is often a zirconia-based thermal barrier coating. In such a case, a caustic solution is used to remove the coating within an autoclave. The substrate can be a component of a turbine engine.
    Type: Grant
    Filed: December 15, 1998
    Date of Patent: July 31, 2001
    Assignee: General Electric Company
    Inventors: Thomas Joseph Cartier, D. Sangeeta
  • Patent number: 6256121
    Abstract: An imaging system for ablating an array matrix of high-density vias in a flexible and rigid desired object. The apparatus contains a mirror based x, y scanning repeat positioning and/or a single axis scanner positioning system that directs a single point of a coherent light radiation beam at desired individual mask segments. These mask segments are formed into a planar mask array. A flat field collimating lens system is positioned between the mirror scanning system and the mask arrays to correct the angular beam output of the repeat positioning mirror and redirects the beam so that it strikes a specific rear surface segment(s) of in the mask array. The flat field collimating lens provides a beam that either illuminates the mask perpendicular to its surface or at preselected optimized illumination angles. Once illuminated, the specific segment of the mask array images and processes a single or a plurality of desired holes or features in a top surface of a flexible or rigid desired object to be processed.
    Type: Grant
    Filed: March 31, 2000
    Date of Patent: July 3, 2001
    Assignee: NanoVia, LP
    Inventors: Todd E. Lizotte, Orest Ohar
  • Patent number: 6254791
    Abstract: A method of making an illuminate, multicolored panel, comprising the steps of fixing together an opaque layer to a clear layer to form a panel, etching a well into the opaque layer of the panel, and depositing tinted translucent material into the well.
    Type: Grant
    Filed: February 19, 1999
    Date of Patent: July 3, 2001
    Assignee: Harnischfeger Technologies, Inc.
    Inventor: James W. Boyd
  • Publication number: 20010004065
    Abstract: A process of manufacturing a roll punch used for forming the partition walls on the rear panel of a PDP is disclosed. In the process of this invention, a forming roll is primarily coated with a mask on its external surface. The mask is, thereafter, partially removed from the forming roll, thus forming a plurality of regularly spaced mask-free parts on the forming roll. The forming roll is, thereafter, etched at the mask-free parts using ultrasonic waves within an etching tank, and so a desired roll punch having partition wall forming grooves is produced. This manufacturing process enlarges the width of the lands between the forming grooves of the roll punch, thus allowing an easy arrangement of address electrodes on the rear panel of a PDP. It is also possible to produce a desired highly precise roll punch by properly adjusting the intervals between the mask-free parts of the forming roll.
    Type: Application
    Filed: December 7, 2000
    Publication date: June 21, 2001
    Inventors: Sang Jin Oh, Bong Hyang Kim, Deok Hwan Kim
  • Patent number: 6226390
    Abstract: The pore-size distribution of a porous sample of variable porosity is modeled achievement of, allowing laboratory studies on the behavior of the medium modeled in relation to fluids. The porosity of the porous medium is modeled on one or more parting surfaces by means of a network (R) of intersecting channels (C) whose nodes form pores (P), the size of these channels showing physical properties of the medium and being selected from one or more discrete channel size distributions. In order to model the porosity of a heterogeneous sample exhibiting very different porosity zones, several discrete channel distributions are preferably used, these distributions being disjoint or not, and modeling with different zones, zones of low permeability and zones of higher permeability.
    Type: Grant
    Filed: November 17, 1997
    Date of Patent: May 1, 2001
    Assignee: Institute Francais du Petrole
    Inventors: Christian Deruyter, Jean-François Le Romancer, Dominique Garnier
  • Patent number: 6203891
    Abstract: A method for forming a through-via in a laminated substrate by laser drilling the through-via in a laminated substrate from a top exposed surface of the substrate to a bottom exposed surface of the substrate using a plurality of laser pulses that are trepanned in a first predetermined pattern. Each pulse trepanned in the first predetermined pattern has a first energy density per pulse. Then, the through-via is laser drilled using a plurality of laser pulses that are trepanned in a second predetermined pattern. Each pulse trepanned in the second predetermined pattern has a second energy density per pulse that is greater than the first energy density per pulse. The second predetermined pattern is within the first predetermined pattern.
    Type: Grant
    Filed: February 22, 2000
    Date of Patent: March 20, 2001
    Assignee: W. L. Gore & Associates, Inc.
    Inventor: David B. Noddin
  • Patent number: 6202444
    Abstract: A method of providing an encodable layer on a glass object and on the resultant product. Said layer is formed by providing a paste containing glass frit, pigment and a binder, on the hot glass. As a result, the glass frit melts, causing the pigment to adhere to the glass object. The binder, which is used to render the paste spreadable, disappears from the mixture.
    Type: Grant
    Filed: January 7, 2000
    Date of Patent: March 20, 2001
    Assignee: U.S. Philips Corporation
    Inventors: Raymond J. L. Van Kooyk, Johan Bosman
  • Patent number: 6187213
    Abstract: In order to produce on the table of a diamond gemstone (7), an information mark which is invisible to the naked eye using a ×10 loupe, an ultraviolet laser (1) having a wavelength of 193 nm is used in association with a mask (2) to irradiate the surface of the stone (7) at a fluence of less than 2 J/cm2 per pulse and with not fewer than 100 pulses, in the presence of air which reacts with the diamond (7) and causes the mark to be formed without any darkening which is visible when viewing using a microscope.
    Type: Grant
    Filed: May 15, 1998
    Date of Patent: February 13, 2001
    Assignee: Gersan Establishment
    Inventors: James Gordon Charters Smith, Martin Cooper
  • Patent number: 6177147
    Abstract: To produce a desirable amount of desirable radical and/or ion in treating a substrate such as etching the substrate, depositing a thin film on the substrate and the like by using plasma and the like. As a treating gas, a gas such as CFmIn and the like containing both a strongly bonded halogen element (F etc.) and weakly bonded halogen element (I etc.) is used. A substrate is treated by active species produced by exciting the treating gas by an excitation means capable of providing an energy which cannot dissociate the strong bond but can dissociate the weak bond. Preferable excitation means is capable of emitting a monochromatic irradiation, having a single value of excitation energy, such as electron beam, light etc., or otherwise capable of providing plasma, having a peak energy value of electrons and sharp electron energy distribution, such as UHF plasma etc.
    Type: Grant
    Filed: March 26, 1999
    Date of Patent: January 23, 2001
    Assignee: NEC Corporation
    Inventors: Seiji Samukawa, Kenichirou Tsuda
  • Patent number: 6177237
    Abstract: A method for fabricating a substantially transparent polymer substrate for an anti-scatter x-ray grid for medical diagnostic radiography includes positioning a phase mask between the substrate and a high power laser; providing a laser beam from the laser; conditioning the laser beam; ablating a first portion the substrate through the phase mask with the conditioned laser beam; and moving the substrate; and ablating a second portion of the substrate through the phase mask with the conditioned laser beam.
    Type: Grant
    Filed: June 26, 1998
    Date of Patent: January 23, 2001
    Assignee: General Electric Company
    Inventors: Renato Guida, James Wilson Rose, Kenneth Paul Zarnoch, Gary John Thumann
  • Patent number: 6149988
    Abstract: A method for treating an object with a laser including emitting a laser beam from a laser; expanding the laser beam in a first direction; removing a portion of the laser beam though a mask, the portion including at least edges of the expanded laser beam extending in the first direction; and condensing the laser beam in a second direction orthogonal to the first direction in order to form a line-shaped laser beam on an object.
    Type: Grant
    Filed: December 10, 1998
    Date of Patent: November 21, 2000
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisato Shinohara, Akira Sugawara
  • Patent number: 6143191
    Abstract: A method of forming an iridium-based electrode structure on a substrate, from an iridium-containing precursor thereof which is decomposed to deposit iridium on the substrate. The iridium-based material is formed on the substrate in a desired environment, e.g., an oxidizing ambient environment which may for example contain an oxidizing gas such as oxygen, ozone, air, or nitrogen oxide, or alternatively a reducing environment containing a reducing agent such as H.sub.2, CO or NH.sub.3. The iridium deposited on the substrate is contacted with an etching reagent such as halogen-based etch species (e.g., Cl.sub.2, Br.sub.2, F.sub.2, CCl.sub.4, Si.sub.2 F.sub.6, SiCl.sub.4, NF.sub.3, C.sub.2 F.sub.6, SF.sub.6, or CF.sub.4) formed by exposing halogen to light, laser radiation, plasma, or ion beam, or alternatively with XeF.sub.2, for sufficient time and under sufficient conditions to etch the deposited iridium-based material and form the etched iridium-based electrode structure.
    Type: Grant
    Filed: November 10, 1997
    Date of Patent: November 7, 2000
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Thomas H. Baum, Frank Dimeo, Jr.
  • Patent number: 6139674
    Abstract: A method for fabricating a filter element to prevent contaminants from entering an ink supply inlet of an ink jet printhead. The filter is formed by laser ablation process in which output laser radiation is directed through a mask system or light transmitting system to create a filter hole pattern in a thin film. Slightly tapered holes are formed in the film, and the formed filter element is laminated to the ink supply inlet. The tapered holes provide improved flow/impedance and add increased structural strength.
    Type: Grant
    Filed: September 10, 1997
    Date of Patent: October 31, 2000
    Assignee: Xerox Corporation
    Inventors: Roger G. Markham, John R. Andrews, Gary A. Kneezel
  • Patent number: 6136210
    Abstract: A method of fabricating a lens comprising providing a photosoluble substrate having opposed first and second surfaces; exposing one of the surfaces of the substrate to a photoactive etchant; and exposing said etchant to patterned light such that a convex or concave, generally semi-spherical bulge or recess is formed in said substrate.
    Type: Grant
    Filed: November 2, 1998
    Date of Patent: October 24, 2000
    Assignee: Xerox Corporation
    Inventors: David K. Biegelsen, Scott A. Elrod, Raj B. Apte, Donald Smith
  • Patent number: 6132853
    Abstract: A method for forming a through-via in a laminated substrate by laser drilling the through-via in a laminated substrate from a top exposed surface of the substrate to a bottom exposed surface of the substrate using a plurality of laser pulses that are trepanned in a first predetermined pattern. Each pulse trepanned in the first predetermined pattern has a first energy density per pulse. Then, the through-via is laser drilled using a plurality of laser pulses that are trepanned in a second predetermined pattern. Each pulse trepanned in the second predetermined pattern has a second energy density per pulse that is greater than the first energy density per pulse. The second predetermined pattern is within the first predetermined pattern.
    Type: Grant
    Filed: June 24, 1999
    Date of Patent: October 17, 2000
    Assignee: W. L. Gore & Asssociates, Inc.
    Inventor: David B. Noddin
  • Patent number: 6130015
    Abstract: A method of making a laminated substrate by forming a registration mark on a core layer of the substrate. Then, forming a first layer on the core layer using the registration mark as a fiducial registration point. The first layer is laser drilled through to expose the registration mark on the core layer. A second layer is then formed on the first layer using the registration mark as a fiducial point.
    Type: Grant
    Filed: February 3, 2000
    Date of Patent: October 10, 2000
    Assignee: W. L. Gore & Associates, Inc.
    Inventors: David B. Noddin, Donald G. Hutchins
  • Patent number: 6117347
    Abstract: A method of separating a wafer into individual die is disclosed. The wafer includes a substrate with organic thin-film multiple layers. A portion of the organic multiple layers is etched along a scribe line with excimer laser to form a groove to expose a portion of the substrate before sawing the substrate along the scribe line with a saw blade. Plasma etching or ion beam etching or sand blasting is an alternative to the excimer laser.
    Type: Grant
    Filed: July 10, 1997
    Date of Patent: September 12, 2000
    Assignee: NEC Corporation
    Inventor: Hisashi Ishida
  • Patent number: 6103177
    Abstract: A mastering apparatus for recording optical information onto a glass master 6, includes an objective lens 3, a slider 5 for controlling the movement of the objective lens 3 in the tracking direction, a turn table 7 for rotating the glass master 6, a spindle motor 8 for controlling the rotation of the turn table 7, a positioning beam generator 9, a positioning beam detector 10 for detecting a positioning beam reflected and/or diffracted by positioning units 16 and 17 and a slider controller 11 for moving the slider 5 based on the result of reception of a beam at the positioning beam detector 10. The positioning unit 16 is mounted on the vicinity of the objective lens 3, and the positioning unit 17 is mounted on the upper surface of a spindle stationary portion 13. Since the position of the positioning unit 17 is always stable, relative positional deviation between the positioning units 16 and 17 can be accurately detected by detecting the beam diffracted by the positioning units 16 and 17.
    Type: Grant
    Filed: December 2, 1998
    Date of Patent: August 15, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Jun Nishida, Nobutaka Kikuiri
  • Patent number: 6092280
    Abstract: A flexible film interface includes a flexible film; flexible material attached to a portion of the flexible film; surface metallization on the flexible material, the flexible film having at least one via extending therethrough to the surface metallization; and a floating pad structure including floating pad metallization patterned over the flexible material and the surface metallization, a first portion of the floating pad metallization forming a central pad and a second portion of the floating pad metallization forming at least one extension from the central pad and extending into the at least one via.
    Type: Grant
    Filed: May 26, 1999
    Date of Patent: July 25, 2000
    Assignee: General Electric Co.
    Inventor: Robert John Wojnarowski
  • Patent number: 6090300
    Abstract: A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.
    Type: Grant
    Filed: May 26, 1998
    Date of Patent: July 18, 2000
    Assignee: Xerox Corporation
    Inventors: Jack Walker, Werner Goetz, Noble M. Johnson, David P. Bour, Thomas L. Paoli
  • Patent number: 6086774
    Abstract: A method of making released structures by using at least two directional etching steps. Cantilevers, bridges and many other structures can be made with the present invention. In a preferred embodiment, two directional etching steps are performed at opposing angles nonnormal to the substrate surface such that the substrate is undercut and a structure is released. Alternatively, more than two directional etching steps may be performed at various angles. For example, the substrate may be rotated continuously during the directional etching process. A cantilever formed by the method of the present invention necessarily has a substantially triangular cross section. Directional etching processes that can be used include focused ion beam etching and ECR plasma etching. Some directional etching processes may require the use of a patterned etch resist layer. Other etching processes such as focused ion beam etching may use scanning techniques to select which regions are etched.
    Type: Grant
    Filed: December 18, 1997
    Date of Patent: July 11, 2000
    Assignees: The Board of Trustees of the Stanford Leland Junior University, Japan Science and Technology Corporation
    Inventors: Francis Ho, Yoshihisa Yamamoto
  • Patent number: 6083411
    Abstract: A method of forming adjacent ink and dilution solution nozzles in an orifice plate includes first providing an orifice plate having a thickness dimension. A first nozzle is then formed having a first orifice extending through the orifice plate at a first angular orientation that is generally normal to the thickness dimension. A second nozzle is then formed having a second orifice adjacent to the first orifice and at a second different angular orientation. One of the first and second nozzles is the ink nozzle and the other of the first and second nozzles is the dilution solution nozzle. The first and second nozzles are formed by laser light irradiation.
    Type: Grant
    Filed: January 12, 1998
    Date of Patent: July 4, 2000
    Assignee: Sony Corporation
    Inventors: Tetsuo Nakayama, Koichiro Kishima, Makoto Ando, Takaaki Murakami
  • Patent number: 6074571
    Abstract: A method and apparatus for repairing black dot defects connected to a circuit pattern in photomasks such as a photomask having a patterned chromium film on a glass substrate comprises using an energy source in the form of an energy beam to first sever the connected black dot defect from the chrome pattern forming a space between the defect and the chrome pattern. The remaining severed black dot defect is then removed using the same or different energy beam to remove the remainder of the chrome defect. An apparatus for removing black dot defects and photomasks produced by the method and apparatus of the invention are also provided.
    Type: Grant
    Filed: September 30, 1997
    Date of Patent: June 13, 2000
    Assignee: International Business Machines Corporation
    Inventor: Jacek Smolinski
  • Patent number: 6069089
    Abstract: A system for labeling defective semiconductor chips so that such defective chips can be used in secondary or downgraded applications is provided. The system includes identifying defective semiconductor chips which are not fit for their primary purpose. These defective semiconductor chips are labeled with a letter, symbol or other marking which indicates that they are defective. The marking may indicate the degree of defectiveness, or may include a code or other standard set forth by the industry. The label is etched or carved into the semiconductor generally at one or both ends, or at a center portion, using a laser or an engraver or other permanent labeling device. The etching or carving is of a depth which prevents one from knowingly or unknowingly erasing, removing or otherwise obliterating the label. An etching or carving depth of one half the thickness from the top surface of the chip has been found to be effective.
    Type: Grant
    Filed: December 18, 1998
    Date of Patent: May 30, 2000
    Inventor: Hong C. Suh
  • Patent number: 6063695
    Abstract: A process for the formation of deep clear laser marks on silicon wafers is described. Tall ridges of material which is erupted from the wafer surface during the deep laser penetration form adjacent to the marks. These ridges are of the order of 3 to 15 microns in height and must be removed prior to subsequent wafer processing to avoid fragmentation causing scratches and particulate contamination. The process of the invention deposits a non-conformal layer of photoresist or other flowable material on the wafer. The peaks of the ridges protrude above the surface of the conformal layer be a significant amount and are then etched away using an aqueous silicon etch. The non-conformal layer protects the wafer surface from the silicon etch so that only the ridges are removed. After the ridges are etched, the non-conformal layer is removed leaving residual ridges of a height less than or equal to the thickness of the conformal layer.
    Type: Grant
    Filed: November 16, 1998
    Date of Patent: May 16, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chung-Te Lin, Chin-Hsiung Ho, Hsueh-Liang Chiu, So-Wein Kuo
  • Patent number: 6055829
    Abstract: A process is described for producing a desired breaking point for breaking the glass wall of a glass body, in particular a break-open ampule or a tube, or for separating parts out of a pane of glass by generating microcracks in the breaking zone, in which process the microcracks are generated in the interior of the glass wall or the pane of glass.
    Type: Grant
    Filed: July 7, 1998
    Date of Patent: May 2, 2000
    Assignee: Schott Glas
    Inventors: Andre Witzmann, Ulls Trinks
  • Patent number: 6048588
    Abstract: An apparatus and method for selectively removing undesired material from the surface of a substrate provides a flow of inert gas over the undesired material substrate surface while irradiating the undesired material with energetic photons. The invention enables removal of undesired material without altering the physical properties of the material underlying or adjacent the removed, undesired material. Removal effectiveness may be enhanced by utilizing polarized energetic photons. Directing a laser beam to the back side of a transparent substrate may enhance the effectiveness of removal.
    Type: Grant
    Filed: March 16, 1998
    Date of Patent: April 11, 2000
    Assignee: Cauldron Limited Partnership
    Inventor: Audrey C. Engelsberg