Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

Abstract: A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

Abstract: A method of etching a semiconductor substrate with improved critical dimension uniformity comprises supporting a semiconductor substrate on a substrate support in an inductively coupled plasma etch chamber; supplying a first etch gas to a central region over the semiconductor substrate; supplying a second gas comprising at least one silicon containing gas to a peripheral region over the semiconductor substrate surrounding the central region, wherein a concentration of silicon in the second gas is greater than a concentration of silicon in the first etch gas; generating plasma from the first etch gas and second gas; and plasma etching an exposed surface of the semiconductor substrate.

Abstract: A plasma etching apparatus for etching semiconductor wafers. The plasma etching apparatus has a reaction tube made of a dielectric material and a high frequency antenna located around the reaction tube for generating a plasma inside the reaction tube. The high frequency antenna has a sloped segment that produces a relatively large capacitive coupling with the reaction tube. The high frequency antenna is moved by a driver around the reaction tube in a horizontal plane.

Abstract: The method for generating radicals comprises: feeding F2 gas or a mixed gas of F2 gas and an inert gas into a chamber of which the inside is provided with a carbon material, supplying a carbon atom from the carbon material by applying a target bias voltage to the carbon material, and thereby generating high density radicals, wherein the ratio of CF3 radical, CF2 radical and CF radical is arbitrarily regulated by controlling the target bias voltage applied to the carbon material while measuring the infrared absorption spectrum of radicals generated inside the chamber.

Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact points across the backing plate; and at least one thermally and electrically conductive gasket separating the backing plate and the thermal control plate, or the backing plate and showerhead electrode, at the contact points. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

Abstract: The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.

Abstract: A plasma processing apparatus includes a chamber to provide an inner area in which a process is performed upon an object, and a plasma source to generate an electric field in the inner area and thereby to generate plasma from a source gas supplied in the inner area, wherein the plasma source comprises a top source provided in the top of the chamber, and a side source encompassing the side of the chamber and allowing current to flow from the one side of the chamber to the other side thereof.

Abstract: A low inductance RF antenna is provided for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The antenna has a planar segmented configuration having high and low efficiency segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. The antenna has closely spaced conductor segments through which current flows in one or more small cross-section conductors to produce high magnetic fields while alternating widely spaced conductor segments produce low strength magnetic fields.

Abstract: A method and a device suitable for implementing this method for etching a substrate (10), a silicon body in particular, using an inductively coupled plasma (14) are proposed. For this purpose, a radio-frequency electromagnetic alternating field is generated with an ICP source (13), the alternating field generating an inductively coupled plasma (14) of reactive particles in a reactor (15). The inductively coupled plasma (14) arises by the action of the radio-frequency electromagnetic alternating field on a reactive gas. Furthermore, a device is provided with which a plasma power injected into the inductively coupled plasma (14) via the radio-frequency electromagnetic alternating field with the ICP source (13) is capable of being pulsed so that at least from time to time a pulsed radio-frequency power can be injected into the inductively coupled plasma (14) as a pulsed radio-frequency power.

Abstract: A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.

Abstract: A method for processing a workpiece in a plasma reactor. The method comprises constraining plasma in the chamber away from the floor of the pumping annulus, providing an annular baffle while compensating for asymmetry of gas flow attributable to the pumping port, and providing a gas flow equalizer below the baffle having an eccentrically shaped opening. The method further includes modifying the radial distribution of plasma ion density and providing a magnetic plasma steering field having an edge high plasma ion density distribution tendency. The method further comprises locating the baffle at a sufficient distance below the workpiece to provide an edge low plasma ion density distribution tendency that compensates the edge high plasma ion density distribution tendency of the magnetic plasma steering field.

Abstract: A plasma generating apparatus and method using a neutral beam, capable of readily generating plasma at the same gas flow rate by changing the structure of an ion gun, without a separate ignition device, are provided. The apparatus includes a plasma generating part formed of a quartz cup, a radio frequency (RF) applying antenna disposed at the periphery of the plasma generating part, a cooling water supply part disposed at the periphery of the plasma generating part, and an igniter in direct communication with the plasma generating part, wherein a gas for generating plasma is supplied into the igniter, and the igniter has a higher local pressure than the plasma generating part at the same gas flow rate. The ion gun is also cheaper to manufacture since it does not require a separate power supply.

Abstract: A dry etching apparatus having excellent in-plane uniformity and a high etching rate and a dry etching method are provided. A dry etching apparatus includes a vacuum chamber having an upper plasma generation chamber and a lower substrate processing chamber; a magnetic field coil disposed outside a sidewall of the plasma generation chamber; an antenna coil disposed between the magnetic field coil and the outside of the sidewall and connected to a high-frequency power source; and means for introducing an etching gas disposed on top of the plasma generation chamber, wherein the sidewall is formed of a material having a relative dielectric constant of 4 or more.

Abstract: A plasma source for processing or imaging a substrate, for ion source for proton therapy, for ion thrusters, or for high energy particle accelerators includes a coolant circuit passing adjacent to a plasma ion reactor chamber and RF antenna coils. In a method for operating the plasma ion source having an induction coil adjacent to a reaction chamber for inductively coupling power into the plasma from a radio frequency power source, the method comprises pumping a dielectric fluid into contact with induction coils of the plasma ion source along the coolant circuit. Use of the dielectric fluid both electrically insulates the plasma chamber, so that it can be biased to 30 kV and up, and efficiently transfers heat away from the plasma chamber.

Abstract: A plasma processing apparatus includes a beam-shaped spacer 7 which is placed at an upper opening of a chamber 3 opposed to a substrate 2 to support a dielectric plate 8. The dielectric plate 8 is supported by the beam-shaped spacer 7. In the beam-shaped spacer 7 are provided a plurality of process gas introducing ports 31, 36 which have a depression angle ?d and which are provided downward and directed toward the substrate 2, as well as a plurality of rare gas introducing ports 41 having a elevation angle ?e directed toward the dielectric plate 8. Improvement of processing rates such as etching rate as well as effective suppression of wear of the dielectric plate 8 can be achieved.

Abstract: A method of processing a workpiece in a plasma reactor includes coupling RF power from at least three RF power source of three respective frequencies to plasma in the reactor, setting ion energy distribution shape by selecting a ratio between the power levels of a first pair of the at least three RF power sources, and setting ion dissociation and ion density by selecting a ratio between the power levels of a second pair of the at least three RF power sources. The three respective frequencies can be an LF frequency, an HF frequency and a VHF frequency, wherein the first pair corresponds to the LF and HF frequencies and the second pair corresponds to the HF and VHF frequencies. Alternatively, the power sources comprise four RF power sources, and wherein the first pair corresponds to an HF frequency and an LF frequency and the second pair corresponds to a VHF frequency and another frequency. In one embodiment, the second pair corresponds to an upper VHF frequency and a lower VHF frequency.

Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.

Abstract: Apparatus for in-situ monitoring of a process in a semiconductor wafer processing system consists of a process chamber having a dome, an enclosure disposed above the chamber, a process monitoring assembly positioned proximate the dome, an opening in the dome, and a window covering the opening. A portion of the apparatus supports the process monitoring assembly to establish a line-of-sight propagation path of monitoring beams from above the dome, through the window to the substrate to facilitate etch depth measurement without encountering interference from high power energy sources proximate the chamber. A method of fabricating a process monitoring apparatus consists of the steps of boring an opening into a dome, positioning the process monitoring assembly in proximity to the dome so as to allow a line-of-sight propagation path of monitoring beams from the process monitoring assembly to a wafer, and covering the opening with a window.

Abstract: A method of processing a workpiece in a chamber of a plasma reactor having a set of plural electromagnet coils includes selecting plural predetermined plasma density distributions relative to a workpiece surface, the predetermined plasma density distributions corresponding to different sets of D.C. currents in the coils, and flowing a process gas into the chamber and generating a plasma in the chamber. The method further includes switching plasma in the chamber between the predetermined plasma density distributions by switching D.C. currents through the coils between the different sets of D.C. currents.

Abstract: Reactive atom plasma processing can be used to shape, polish, planarize and clean the surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, and/or clean the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from the surface of the workpiece.

Abstract: A liquid discharge head includes, on a same substrate, pressure generating chambers, nozzle apertures communicating with the pressure generating chambers through nozzle communicating pans, and a reservoir, wherein a cross-section area of the nozzle communicating part is larger, along a direction parallel to a nozzle aperture face of the substrate, than a cross-section area of the nozzle aperture, and the cross-section area of the nozzle aperture in such direction remains constant over the entire length of the nozzle aperture.

Abstract: A method and apparatus for improved plasma etching uniformity are provided herein. In one embodiment, a field-shaping magnet is disposed above the chamber processing volume and adjacent to field induction coils. The field-shaping magnet provides improved control of the etch rate at various locations along the surface of a substrate by providing adjustability in the radial profile of a plasma-producing electric field generated by the induction coils. In another embodiment, two field-shaping magnets are used to improve etching uniformity at the substrate surface.

Abstract: An object of the present invention is to provide a plasma processing system and a plasma processing method which use inductive coupled plasmas but do not cause disadvantages due to slant electric fields immediately after plasmas have been ignited. An other object of the present invention is to provide a plasma processing system and a plasma processing method which use inductive coupled plasmas and include a Faraday shield to thereby remove slant magnetic fields so as to ensure the ignition of plasmas. The plasma processing system comprises a chamber 31, a bell jar 32, a coil 42 disposed on the outside of the belljar 32, a Faraday shield 44 disposed between the belljar 32 and the coil 42, a susceptor 33, a conducting member 49 disposed upper of the belljar 32, a first high-frequency electric power source for the coil 42 to generate induced electromagnetic fields, and a second high-frequency electric power source 34 for generating electric fields between the susceptor 33 and the conducting member 49.

Abstract: A method for processing a substrate in a plasma processing chamber. The substrate is disposed above a chuck and surrounded by an edge ring while the edge ring being electrically isolated from the chuck. The method includes providing RF power to the chuck and providing a edge ring DC voltage control arrangement. The edge ring DC voltage control arrangement is coupled to the edge ring to provide first voltage to the edge ring, with the edge ring potential being one of a positive potential, a negative potential and a ground. The method further includes generating a plasma within the plasma processing chamber to process the substrate. The substrate is processed while the edge ring DC voltage control arrangement is configured to cause the edge ring potential to be less than a DC potential of the substrate in an embodiment and to be substantially equal to the DC potential of the substrate in another embodiment.

Abstract: A plasma processing method in which plasma can be ignited stably with a low radio frequency power and a low gas pressure even after long time operation by applying a DC voltage of ?0.5 kV, for example, from a DC power supply (118) to a lower electrode (104) before a radio frequency power is applied from a radio frequency power supply (114) to the lower electrode (104) through a matching unit 112 when the surface of a wafer W mounted on the lower electrode (104) disposed in a processing container (102) is subjected to a specified plasma processing with plasma of a processing gas formed by applying a radio frequency power to the processing gas introduced into the airtight processing container (102).

Abstract: A method for selectively etching an ultra high aspect ratio feature dielectric layer through a carbon based mask in an etch chamber is provided. A flow of an etch gas is provided, comprising a fluorocarbon containing molecule and an oxygen containing molecule to the etch chamber. A pulsed bias RF signal is provided. An energizing RF signal is provided to transform the etch gas to a plasma.

Abstract: A method is provided for processing a workpiece supported on a support surface in a chamber of a plasma reactor. A process gas is introduced into the chamber and a plasma is generated with pulse-modulated RF power. The method comprises successively repeating the following cycle: (a) concentrating the plasma in the chamber in a center-high plasma ion distribution for a first on-time duration; (b) permitting plasma to drift during a first off-time duration away from the center-high plasma ion distribution; (c) concentrating the plasma in the chamber in an edge-high plasma ion distribution for a second on-time duration; and (d) permitting plasma to drift during a second off-time duration away from the edge-high plasma ion distribution. The method further comprises adjusting a plasma process rate near a center of the workpiece by adjusting a duty cycle of the first on-time and first off-time.

Abstract: A method of fabricating multilayer interconnect structures on a semiconductor wafer begins by roughening the interior surface of a metal lid to a surface roughness in excess of SA 2000 with a reentrant surface profile, and installing the metal lid as the ceiling of a plasma clean reactor chamber having a wafer pedestal facing the interior surface of the ceiling.

Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.

Abstract: Fabrication apparatus and methods are disclosed for shaping and finishing difficult materials with no subsurface damage. The apparatus and methods use an atmospheric pressure mixed gas plasma discharge as a sub-aperture polisher of, for example, fused silica and single crystal silicon, silicon carbide and other materials. In one example, workpiece material is removed at the atomic level through reaction with fluorine atoms. In this example, these reactive species are produced by a noble gas plasma from trace constituent fluorocarbons or other fluorine containing gases added to the host argon matrix. The products of the reaction are gas phase compounds that flow from the surface of the workpiece, exposing fresh material to the etchant without condensation and redeposition on the newly created surface. The discharge provides a stable and predictable distribution of reactive species permitting the generation of a predetermined surface by translating the plasma across the workpiece along a calculated path.

Abstract: A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece.

Abstract: A process for removing organic electroluminescent residues from a substrate is described herein. The process includes the steps of providing a process gas comprising a fluorine-containing gas, optionally an oxygen-containing gas, and optionally an additive gas; activating the process gas in a remote chamber using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the organic electroluminescent residue from the surface.

Abstract: A slider manufacturing method includes: providing a row bar constructed from multiple slider bodies having a surface for forming an air bearing surface (ABS); forming multiple cutting lines on the surface for forming an ABS of the row bar; forming a stress absorption region adjacent to the cut line in a cutting region defined by two adjacent cutting lines; grinding the surface for forming an ABS of the row bar; and cutting the row bar along the cutting lines to form multiple individual sliders. When the row bar is cut by a cutter into multiple individual sliders along the cutting lines, stress generated in the cutting region adjacent to cutting lines during cutting is partly or fully absorbed by the stress absorption region, reducing the chances of clear edge jumps forming at the edges of the ABS of the slider after the cutting, and disk surface scratching by the slider.

Abstract: A plasma processing apparatus includes a processing chamber which has a dielectric wall partly formed of a dielectric substance and in which a to-be-processed substrate is subjected to a plasma process, an induction coil which is arranged to face the dielectric wall and generates an induction electric field to generate plasma in the processing chamber, a Faraday shield which is provided to partially have openings between the dielectric wall and the induction coil to shield an electrostatic field component and pass an electromagnetic field component, and a drive mechanism which moves the Faraday shield.

Abstract: Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the substrate through exposure to a high density plasma generated using an inductively coupled etching apparatus. The high density plasma is set and controlled to isotropically contact particular regions of the inorganic material to allow for trimming and control of a critical dimension associated with the inorganic material.

Abstract: The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.

Abstract: A method is proposed for etching structures into an etching body, in particular, recesses which are laterally precisely defined by an etching mask, into a silicon body, using a plasma. In the process, a high-frequency pulsed, low-frequency modulated high-frequency power is coupled at least intermittently into the etching body using a high-frequency a.c. voltage and, in addition, the intensity of the plasma is modulated as a function of time.

Abstract: A side-by-side read/write head includes a self-aligned trailing shield, where a rear edge of the trailing shield is defined by the same lithography/etching process used to define a rear edge of a read sensor. A plurality of read sensor layers and a pole tip structure adjacent the read sensor layers are formed over a wafer. A non-magnetic layer is deposited over the pole tip structure. A patterned resist is then formed over both the read sensor layers and the non-magnetic layer. With the patterned resist in place, read sensor materials of the read sensor layers are etched away so as to define the rear edge of the read sensor. Non-magnetic materials of the non-magnetic layer are simultaneously etched away so as to form an etched region which defines the rear edge for the trailing shield.

Abstract: Disclosed is a method for processing a two layer mask for use in fabrication of semiconductor devices whereby the critical dimension (CD) of a semiconductor device being fabricated with the mask can be controlled. After forming a carbon mask layer and a silicon containing photoresist layer on the carbon mask, a two-step process forms openings in the carbon mask layer, as required for subsequent device fabrication. The structure is placed in a plasma processing chamber, and an oxygen plasma is employed to partially etch the carbon layer. The oxygen plasma reacts with silicon in the photoresist to form a hard silicon oxide layer on the surface of the photoresist. A hydrogen plasma is then employed to complete the etch through the carbon layer with a reduced critical dimension. Damage to the silicon containing photoresist layer is kept to a minimum during the plasma etch process by limiting the low frequency RF power.

Abstract: A selective etching method with lateral protection function is provided. The steps includes: (a) providing a substrate; (b) forming a plurality of tunnels; (c) forming a lateral strengthening structure at a peripheral wall of the tunnels; (d) removing a bottom portion of the lateral strengthening structure, and a part of the substrate by an etching process so as to form a lower structure and expose an unstrengthened structure; and (f) etching the unstrengthened structure laterally so as to form an upper structure.

Abstract: A method of plasma etching a layer of dielectric material having a dielectric constant that is greater than four (4). The method includes exposing the dielectric material layer to a plasma comprising a hydrocarbon gas and a halogen containing gas.

Abstract: Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HCl:H2O prior to metal contact formation.

Abstract: There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. A mixture of H2 and N2 gas is used as a first processing gas. By absorbing potential in a grounded grid or baffle between a plasma generator and a substrate, only radicals are passed to the substrate, and HF gas is used as a second processing gas. Thus a native oxide layer, a chemical oxide layer, or a damaged portion formed on the silicon substrate during etching is removed in annealing step with H2 flow. The environment of a chamber is maintained constant by introducing a conditioning gas after each wafer process. Therefore, process repeatability is improved.

Abstract: In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.

Abstract: A chromium-containing half-tone phase-shift photomask comprising coarse and dense patterns coexisting in a plane is prepared by a series of pattern-forming steps including forming a resist layer on a photomask blank, exposing and patterning said resist layer, developing, etching said photomask blank and removing said resist layer. Patterns for transferring onto a wafer are formed on the photomask blank by a dry-etching method comprising dry-etching a chromium-containing half-tone phase-shift film utilizing etching gas comprised of mixed gas including (a) reactive ion etching gas, containing an oxygen-containing gas and a halogen-containing gas, and (b) reducing gas added to the gas component (a).

Abstract: An apparatus for controlling the voltage applied to a shield interposed between an induction coil powered by a power supply via a matching network, and the plasma it generates, comprises a shield, a first feedback circuit, and a second feedback circuit. The power supply powers the shield. The first feedback circuit is connected to the induction coil for controlling the power supply. The second feedback circuit is connected to the shield for controlling the voltage of the shield. Both first and second feedback circuits operate at different frequency ranges. The first feedback circuit further comprises a first controller and a first sensor. The first sensor sends a first signal representing the power supplied to the inductive coil to the first controller. The first controller adjusts the power supply such that the power supplied to the inductor coil is controlled by a first set point. The second feedback circuit further comprises a second sensor, a second controller, and a variable impedance network.

Abstract: The present invention provides a technique, including a method and apparatus, for etching a substrate in the manufacture of a device. The apparatus includes a chamber and a substrate holder disposed in the chamber. The substrate holder has a selected thermal mass to facilitate changing the temperature of the substrate to be etched during etching processes. That is, the selected thermal mass of the substrate holder allows for a change from a first temperature to a second temperature within a characteristic time period to process a film. The present technique can, for example, provide different processing temperatures during an etching process or the like.