Abstract: On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.

Abstract: A plasma processing system includes an automated electrode retention mechanism (130) for providing automated engagement of a source electrode (152) with a drive electrode (154). In addition, an automated electrode handling system (320) is provided that has the ability to remove a source electrode (152) from the electrode retention mechanism and replace it with a second source electrode (152′) that is stored in a staging area (340) outside the plasma processing system vacuum chamber. The system may operate automatically under program control of a computer system (200) coupled thereto.

Abstract: An anomalous arc discharge detection apparatus, including multiplicity of ultrasonic detectors placed at different sections of a plasma processing chamber such that an ultrasonic wave accompanying an anomalous discharge is detected by the ultrasonic detectors at different propagation times or with different delay times. The detected signals are compared with each other on the same time axis to obtain the maximum range of variation of the detected waveforms and the differences in delay time of the respective ultrasonic detectors. From the comparison of the maximum range of variation and the delay times of the ultrasonic detectors, the position of the source point, and the level as well, of the anomalous arc discharge are determined, which can be displayed on a monitor and utilized to issue an alarm if necessary.

Abstract: A plasma processing apparatus having a process chamber to process specimens; a status detecting unit for detecting the internal processing status of the process chamber and outputting a plurality of signals; and a signal converting unit for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selector and creating an arbitrary number of device status signals. The signal converting unit creates fewer effective device status signals of a time series from the output signals.

Abstract: A system for converting DC power (22) into an RF electromagnetic field in a processing chamber, the system being composed of: a coil (16) constructed to surround the processing chamber; and an RF power generator (20) including a free-running oscillator (26) having a DC power input and an RF power output, the power output connected to a load impedance which includes the coil for supplying RF current to the coil at a frequency which is dependent on the load impedance.

Abstract: The invention relates to a plasma source whose plasma is ignited by means of an electric voltage. To be able to carry out the ignition at relatively low voltages, a plate (5) provided with holes (13, 14) is provided beneath a plasma volume (17), which is disposed above a wall (21) of a plasma chamber (3). Through this plate (5) an ignition volume (16) is formed beneath the plasma volume (17) with a higher pressure than in the plasma volume (17), in which the plasma ignites first. The ignition is subsequently propagated through the holes of the plate (5) into the plasma volume (17).

Abstract: The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting into high velocity regions of an overlying airflow in order to dissipate heat from the chamber. Ducting defined by cover overlying the exposed exterior surface of the dome may also feature projecting lips or an airfoil to place high velocity components of the airflow into contact within the exterior dome surface and the fins. Other techniques include employing a high speed fan to control airflow circulation, and the use of temperature sensors in communication the fan through a processor to control fan speed and thereby regulate chamber temperature.

Abstract: Here is disclosed a plasma generator using microwave wherein a plasma generating chamber is provided with a plurality of wave guide tubes extending in parallel one to another at regular intervals, each of the wave guide tubes being formed with a plurality of coupling ports arranged intermittently in an axial direction of the wave guide tube and dimensioned so that coupling coefficient thereof become gradually higher toward a distal end of the wave guide tube, and a plurality of dielectric windows provided through the plasma generating chamber in association with the respective coupling ports so that microwave electric power radiated through the coupling ports into the plasma generating chamber may be uniformized and thereby plasma of a large area may be generated with high and uniform density.

Abstract: An asymmetrical focus ring varies the flow-field, which aids in normalizing pressure gradients across the wafer being processed, thereby improving the process. Embodiments of the present invention utilize a focus ring that either (1) contains a pattern of through holes that enhances pumping, or (2) does not contain any such pattern.

Abstract: A method of controlling an output of a generator is provided. The output provides an output signal having a settling time to a load having an impedance. The settling time of the output signal is determined. The output signal is amplitude modulated with a modulation waveform. A sense signal is generated that is representative of the modulated output signal. The sense signal is sampled at a sampling time based upon the settling time of the output signal. A digital representation of the sampled sense signal is generated. The amplitude modulation of the output is controlled based upon the digital representation of the sampled sense signal.

Abstract: An upper electrode unit constituting the upper wall of a processing chamber of an etching device includes a first assembly that includes an upper electrode, a second assembly that supports the first assembly and a third assembly that includes power supply routes. After releasing a second locking mechanism and disengaging the third assembly alone with a removing mechanism, the first assembly is disengaged to perform maintenance on the upper electrode. After locking the second locking mechanism and releasing a first locking mechanism, the removing mechanism is utilized to disengage the second and third assemblies and, as a result, the processing chamber is opened to enable maintenance. By adopting the structure described above, a plasma processing device and a maintenance method thereof, that facilitate maintenance and reduce the workload imposed on the operator, are provided.

Abstract: Plasma is generated in a vacuum processing apparatus and a high-frequency voltage is applied to a lower electrode on which a wafer is placed. The high-frequency voltage applied to the lower electrode is subjected to periodical on-off modulation, the on-off duty ratio of which is determined for each wafer or each plurality of wafers, to carry out plasma processing on the wafer. As a result, in the plasma processing carried out on the wafer, the wafer is fabricated with a high degree of reproducibility by suppressing variations in fabricated-line dimension from wafer to wafer without decreasing the throughput.

Abstract: A plasma torch includes a distal part (4) immersed in a container (43) to be decontaminated. A plasma jet (44) produced by sudden discharge of a capacitor between main electrodes (9,11) sweeps directly or by reflection or by sweep-over the whole internal surface of the container (43). The gas exhaust is preferably controlled by a valve (47) operating by gravity on the orifice (42) of the container. The torch is useful for intense decontamination, in particular at a high rate, using an extremely brief and intense plasma flash.

Abstract: An inductively coupled plasma apparatus which is capable of performing etching processing steps in a stable manner and consecutively. Shield plates are provided in a reaction tube in the vicinity of an inner surface thereof. The shield plates prevent a conductive material generated by etching a wafer from sticking to the overall inner surface of the reaction tube. A portion of the inner wall covered by the shield plate, that is, a region where no conductive material is deposited serves as a high-frequency window, through which high-frequency electric power is efficiently fed from a coil antenna into the reaction tube. The conductive materials thus stuck separately from each other exhibit the Faraday shield effect, thereby stabilizing plasma potential.

Abstract: Plasma processing is carried out at pressures of about atmospheric pressure, at pressures below atmospheric pressure, or at pressures above atmospheric pressure. The plasmas are generated using a RF power source and a rectangular waveguide. The plasmas can be used for applications such as materials processing and carrying out chemical reactions.

Abstract: The invention relates to a method of treatment, in particular cleaning and/or heating, for a metal substrate (1) fed in a substantially continuous manner through a vacuum chamber (3), having a treatment zone in which an electric discharge (10), i.e. a plasma, and a magnetic field are produced in a gas maintained at a pressure below atmospheric pressure between at least the substrate (1), acting as an electrode, and at least one counter-electrode (9) to enable the substrate (1) to be bombarded by the ions produced in the electric discharge (10). This method is characterised in that a confining magnetic induction field is produced entirely around the substrate (1) in the treatment zone so that the electric discharge (10) is also confined entirely around the substrate (1) inside this treatment zone by the confinement of electrons released in the electric discharge (10).

Abstract: There is provided a susceptor with a built-in electrode that has excellent corrosion resistance and plasma resistance, and that has excellent durability to the stress of heat cycles, and a manufacturing method for a susceptor with a built-in electrode that enables the susceptor to be manufactured economically. The susceptor with a built-in electrode comprises: a susceptor substrate formed from an aluminum oxide based sintered body; an internal electrode built into the susceptor substrate; and a power supply terminal that is provided so as to make contact with this internal electrode, wherein the internal electrode is formed from an aluminum oxide and molybdenum carbide based composite sintered body containing 30 to 95 volume % of molybdenum carbide and 5 to 75 volume % of aluminum oxide.

Abstract: A substrate cooling unit comprises a cooling plate on which the substrate is placed, a cooling temperature adjusting element which adjusts the cooling plate to a predetermined temperature, a temperature controller which controls a temperature of the cooling temperature adjusting element according to a transfer function, a temperature sensor attached to the cooling plate, and a control parameter changing section which changes at least any one setting of a proportional operation coefficient, integral time or derivative time among control parameters in the transfer function based on a temperature of the cooling plate detected by the temperature sensor after the substrate that is an object to be cooled is placed on the cooling plate.

Abstract: A plasma source for a spectrometer for spectrochemical analysis of a sample is characterized by use of the magnetic field component of applied microwave energy for exciting a plasma. The source includes a waveguide cavity (10) fed with TE10 mode microwave power. A plasma torch (16) passes through the cavity (10) and is axially aligned with a magnetic field maximum (18) of the applied microwave electromagnetic field. Magnetic field concentration structures such as triangular section metal bars (20) may be provided. In an alternative embodiment a resonant iris may be provided within a waveguide and the plasma torch positioned relative thereto such that the microwave electromagnetic field at the resonant iris excites the plasma.

Abstract: Disclosed is a wafer susceptor which includes: a ceramic body; a RF electrode mounted within the ceramic body; a heater mounted within the ceramic body and spaced apart from the RF electrode by a predetermined distance to be disposed below the RF electrode; and an RF shield of a metal material, the RF shield being electrically grounded and mounted within the ceramic body, the RF shield being disposed between the RF electrode and the heater without being in contact with either the heater or the RF electrode. In case where an RF power is applied to the RF electrode, it is possible to minimize an influence of an RF noise on the heater 24. Accordingly, since the RF power can be applied to the susceptor while heating the susceptor at a high temperature, it is possible to deposit a high-density thin film and also control properties of the thin film such as stress and step coverage. Further, the invention may take the stabilization of the power system.

Abstract: It is an object of the present invention to provide a quartz glass jig excellent in the plasma etching resistant characteristics, which does not generate an abnormal etching and particles when used for a plasma generating apparatus. The above Object is obtained by a plasma resistant quartz glass jig that is used for an apparatus of generating plasma, wherein the surface roughness Ra of the quartz glass surface is in a range of from 5 &mgr;m to 0.05 &mgr;m, the number of microcracks of the surface is not more than 500 microcracks/cm2, and the hydrogen molecule concentration in the quartz glass is at least 5×1016 molecules/cm3.

Abstract: To provide a production method of a structure with which a degradation of a processing speed is suppressed and plasma processing is performed with using a reliable plasma processing apparatus and which is excellent in repeatability, a plasma processing apparatus, which includes a container whose inside can be exhausted and a gas supply port for supplying a process gas to the container and subjects to plasma processing an object to be processed placed in the container, is characterized in containing a light shielding film that disturbs the incidence of light, which may increase dielectric loss of a permeable window, to this dielectric window on the internal surface of the permeable window permeating high frequency energy for generating the plasma of the above-described gas, and is provided in the above-described container.

Abstract: A plasma processing system is comprised of a reaction vessel in which are provided a parallel high frequency electrode and ground electrode. The ground electrode is fixed at a ground potential portion, that is, a flange, by a conductive support column. A connection portion from the ground electrode to the ground potential portion, for example, the portions other than the surface of the ground electrode and the surface of the support column etc. are covered by an insulator serving as a high frequency power propagator while the surface of the insulator is covered completely by a conductive member except at the portion for introducing the high frequency power. In this plasma processing system, it is possible to reliably prevent undesirable discharge from occurring at the rear surface of the ground electrode when processing a substrate mounted on the ground electrode to deposit a film using a high frequency power in the VHF band.

Abstract: An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.

Abstract: To uniformly generate plasma using microwaves in a processing vessel. To first to fourth feeding sections 141a to 141d which are evenly placed on the same plane perpendicular to an axial direction of a main coaxial line 123, four microwaves shifted in phase by 0°, 90°, 180°, and 270° are fed from first to fourth microwave supply sections 142a to 142d.

Abstract: A plasma-assisted processing system has a lifting mechanism capable of vertically moving a microwave power unit and a waveguide to adjust the level of a planar slot antenna disposed on an expanded lower end part of the waveguide. A space extending under the antenna is surrounded by a shielding member. An optical sensor having an array of photosensors is disposed on the outer side of a window formed in the side wall of a vacuum vessel to monitor the lower limit level of a cease region for a plasma (cease level). An ideal distance between the cease level and the antenna is determined beforehand and the level of the antenna is adjusted on the basis of a measured cease level so that the antenna is spaced the ideal distance apart from the cease level. Since the difference between the cease level and a level X0 for the cutoff density of an X-wave is fixed, the level X0 may be monitored instead of the cease level.

Abstract: A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100° C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distance 32 from the edge-to-center of the upper and lower grid plates, 30 and 31, of a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.

Abstract: ABSTRACT A plasma processing apparatus having a process chamber to process specimens; a status detecting unit for detecting the internal processing status of the process chamber and outputting a plurality of signals; and a signal converting unit for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selector and creating an arbitrary number of device status signals. The signal converting unit creates fewer effective device status signals of a time series from the output signals.

Abstract: An improved system of igniting a plasma using a rapid voltage rise and thus causing ions that may be pre-existing to create secondary electron emission or the like is provided. In one embodiment, the voltage rise can be timed to be comparable to the transit time of the electrons across the plasma. It can also be arranged to achieve a voltage rise in less than 1000 microseconds, to result in a transition time that is less than one hundred times the transit time, to maximize the emission of secondary electrons, or even to merely result in collision energies ranging from 5 to 500 electron volts. The transition time can be controlled through an ignition control that may be programmable, may involve charging output storage devices, or may involve delayed switching to supply the increased voltage to the plasma after the storage elements have been more fully charged.

Abstract: A device and method for producing sodium (Na) from a feed material such as a mixture of methane (CH4) and sodium hydroxide (NaOH) includes a plasma torch configured to heat the feed material to a temperature sufficient to reduce and ionize sodium (Na). As such, a plasma jet is created by the plasma torch that contains ionized sodium (Na) and non-ionized neutrals such as hydrogen (H) and carbon monoxide (CO). From the plasma torch, the plasma jet is introduced into a chamber where a magnetic field has been established. Once inside the chamber the heated mixture of ions and neutrals interacts with the magnetic field in the chamber to cause the sodium ions to travel substantially along the magnetic field lines while the neutrals travel on paths that are essentially unaffected by the magnetic field. A collector is positioned to receive and accumulate sodium (Na).

Abstract: A placement stage (24) on which a semiconductor wafer (W) is place is provided within a processing container (22). A microwave is generated by a microwave generator (76), and the microwave is introduced into a process container (22) through a flat antenna member (66). The flat antenna member (66) has a plurality of slots (84) arranged along a plurality of circumferences, and the plurality of circumferences are non-concentric to each other. A distribution of plasma density in the flat antenna member (66) in a radial direction is uniform.

Abstract: An apparatus for chemical synthesis or chemical abatement is disclosed which includes a processing chamber and a secondary chamber which is in communication with the processing chamber. The processing chamber is configured to generate an arc in the processing chamber. A magnetic field generator, such as an energized coil or permanent magnet, generates a magnetic field in the processing chamber, which induces the arc generated in the processing chamber to rotate. The apparatus further includes at least one injection port for introducing at least one waste medium into the processing chamber and into the rotating arc whereby the rotating arc transforms the waste medium into a plasma resulting in a disassociation of the chemical constituents comprising the waste medium which thereafter flow into the secondary chamber.

Abstract: A plasma-assisted processing system has a lifting mechanism capable of vertically moving a microwave power unit and a waveguide to adjust the level of a planar slot antenna disposed on an expanded lower end part of the waveguide. A space extending under the antenna is surrounded by a shielding member. An optical sensor having an array of photosensors is disposed on the outer side of a window formed in the side wall of a vacuum vessel to monitor the lower limit level of a cease region for a plasma (cease level). An ideal distance between the cease level and the antenna is determined beforehand and the level of the antenna is adjusted on the basis of a measured cease level so that the antenna is spaced the ideal distance apart from the cease level. Since the difference between the cease level and a level X0 for the cutoff density of an X-wave is fixed, the level X0 may be monitored instead of the cease level.

Abstract: A cleaning device with deeply reaching plasma and assisting electrodes has supporting racks, a chamber, a plasma sources, metallic grids. Flat boards to be cleaned such as circuit boards are located in the supporting racks. The supporting racks are disposed in the chamber. The metallic grids are disposed on two sides of the chamber. The plasma source is disposed next to the metallic grids. Electric voltage is applied to the metallic grids such that plasma from the plasma source can be pushed deeply into the supporting racks to evenly and sufficiently clean the circuit boards.

Abstract: A process for synthesizing nanosized powders utilizes a hybrid exploding wire device containing a solid metal wire fuse in the bore of a tube that is open at each end. The ends of the fuse are connected to electrodes on the ends of the tube. The electrodes are designed to erode to maintain a heavy metal plasma. The bore may comprise a corresponding ceramic to be produced, and a microcrystalline powder of a corresponding ceramic may be retained within the bore. An electrical discharge vaporizes and ionizes the fuse. The tube confines the radial expansion of the plasma such that the plasma exits from both ends of the tube where it reacts with a suitable gas to form nanoscale particles. In addition, the plasma gas ablates and vaporizes a portion of the bore wall to contribute to the nanoceramic synthesis. Other alternatives include replacing the fuse with a thin conductive sheath or a consumable metal insert.

Abstract: A plasma reactor for processing a semiconductor workpiece, includes reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

Abstract: A plasma processing apparatus having a process chamber to process specimens, a status detecting means for detecting the internal processing status of said process chamber and outputting a plurality of signals, and signal converting means for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selecting means and creating an arbitrary number of device status signals. The signal converting means creates fewer effective device status signals of a time series from said output signals.

Abstract: A process for synthesizing nanosized powders utilizes a hybrid exploding wire device containing a solid metal wire fuse in the bore of a tube that is open at each end. The ends of the fuse are connected to electrodes on the ends of the tube. The electrodes are designed to erode to maintain a heavy metal plasma. The bore may comprise a corresponding ceramic to be produced, and a microcrystalline powder of a corresponding ceramic may be retained within the bore. An electrical discharge vaporizes and ionizes the fuse. The tube confines the radial expansion of the plasma such that the plasma exits from both ends of the tube where it reacts with a suitable gas to form nanoscale particles. In addition, the plasma gas ablates and vaporizes a portion of the bore wall to contribute to the nanoceramic synthesis. Other alternatives include replacing the fuse with a thin conductive sheath or a consumable metal insert.

Abstract: A plasma processing method comprises the steps of supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of starting plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on the surface of the substrate.

Abstract: There is provided a susceptor with a built-in electrode that has excellent corrosion resistance and plasma resistance, and that has excellent durability to the stress of heat cycles, and a manufacturing method for a susceptor with a built-in electrode that enables the susceptor to be manufactured economically. The susceptor with a built-in electrode comprises: a susceptor substrate formed from an aluminum oxide based sintered body; an internal electrode built into the susceptor substrate; and a power supply terminal that is provided so as to make contact with this internal electrode, wherein the internal electrode is formed from an aluminum oxide and molybdenum carbide based composite sintered body containing 30 to 95 volume % of molybdenum carbide and 5 to 75 volume % of aluminum oxide.

Abstract: Methods and an apparatus for providing a non-contact probe for accurately measuring the temperature of a substrate in a process chamber are disclosed. One exemplary apparatus is a processing chamber, which includes a heating source, where the heating source heats the substrate. Also included is a window maintained at a substantially constant temperature. The window allows only a first wavelength spectrum of energy emitted from the heating source to pass. In addition, the window isolates the heating source from an internal region of the processing chamber. A probe configured to detect a second wavelength spectrum of energy emitted directly from the substrate is included. The energy emitted directly from the substrate corresponds to a temperature of the substrate, and the temperature of the substrate is provided to the controller, which adjusts an intensity of the heating source based on a set point temperature for the substrate.

Abstract: A plasma reactor system with controlled DC bias for manufacturing semiconductor wafers and the like. The reactor system includes a plasma chamber, a plasma generating coil and a chuck including a chuck electrode. The chuck supports a workpiece within the chamber. The plasma reactor system further includes a pair of generators, one of which supplies a radio frequency signal to the plasma generating coil. The second generator delivers a RF signal which to the chuck electrode and acts to control DC bias at the workpiece. Peak voltage sensor circuitry and set point signal circuitry controls the power output of the generator, and a matching network coupled between the generator and the first electrode matches the impedance of the RF signal with the load applied by the plasma. DC bias determines the energy with which plasma particles impact the surface of a workpiece and thereby determines the rate at which the process is performed.

Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

Abstract: An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.

Abstract: A method and apparatus for plasma waste disposal of hazardous waste material, where the hazardous material is volatilized under vacuum inside a containment chamber to produce a pre-processed gas as input to a plasma furnace including a plasma-forming region in which a plasma-forming magnetic field is produced. The pre-processed gas is passed at low pressure and without circumvention through the plasma-forming region and is directly energized to an inductively coupled plasma state such that hazardous waste reactants included in the pre-processed gas are completely dissociated in transit through the plasma-forming region. Preferably, the plasma-forming region is shaped as a vacuum annulus and is dimensioned such that there is no bypass by which hazardous waste reactants in the pre-processed gas can circumvent the plasma-forming region. The plasma furnace is powered by a high frequency power supply outputting power at a fundamental frequency.

Abstract: An apparatus for distributing RF power outputs to a first electrode in a parallel plate electrode system for generating plasma in depositing films on a substrate. A RF power output is applied to a distributed RF matching network to excite a plasma from a process gas stream to deposit a uniform film onto the substrate. The distributed matching network includes a load capacitor for receiving a radio frequency power input and an inductor having first and second ends with the first end coupled to the load capacitor. The matching network also includes multiple drive capacitors each of which couples the second end of the inductor to a different one of multiple points distributed on the first electrode. The capacitance of each drive capacitor is user-selectable, and the points on the backing plate to which the drive capacitors are coupled are user-selectable.

Abstract: A substrate temperature adjustment apparatus includes a temperature adjustment device for adjusting a temperature of a substrate, and a temperature measurement device for measuring a temperature of the temperature adjustment device, when the temperature is out of a target temperature range. The time taken until the temperature of the substrate falls within the target temperature range is predicted on the basis of the temperature of the temperature adjustment device measured by the temperature measurement device.

Abstract: An improved toroidal low-field plasma source allows plasma ignition within a wider range of gas conditions than permitted by prior art plasma sources. Power efficiency of the plasma source is improved by automatically adjusting the power delivered to the plasma based on the load to the power supply. The plasma source can be operated over a wider pressure range than allowed by prior art plasma sources. The plasma source can be operated so as to increase the output of atomic species from the source. The plasma source can be operated to increase the etch rate of organic materials. The plasma source can efficiently remove hazardous gas compounds from effluent gas streams by converting them into scrubbable products.

Abstract: In accordance with the present invention, a method is provided for dry cleaning a processing chamber. This method comprises the step of introducing a first cleaning process gas into the processing chamber. A plasma is formed from the first cleaning process gas and maintained for a first time period. Next, repeating the step of introducing the cleaning process gas, a second cleaning process gas is introduced into the processing chamber and maintained the plasma for a second time period. As a result, the present invention is capable of removing polymer built up on the processing chamber's interior surfaces to achieve a high yield and maintaining throughput of the substrates in the plasma processing system.

Abstract: In accordance with one aspect of the invention, a plasma reactor has a capacitive electrode driven by an RF power source, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.