Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.

Abstract: Disclosed is a plasma chemical vapor deposition apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a target substrate by utilizing a glow discharge generated by an electric power supplied from a power source, comprising a reaction vessel, means for supplying a reactant gas into the reaction vessel, discharge means for discharge a waste gas of the reactant gas out of the reaction vessel, a ladder-shaped electrode for discharge generation arranged within the reaction vessel, a power source for supplying a high frequency power of 30 MHz to 200 MHz to the ladder-shaped electrode for a glow discharge generation, a heater for heating and supporting a target substrate, the heater being arranged within the reaction vessel in parallel to the ladder-shaped electrode for discharge generation, and a power distributor for uniformly distributing a high frequency power to the ladder-shaped electrode for discharge generation through a power supply wire.

Abstract: An apparatus for distributing RF power outputs to a first electrode in a parallel plate electrode system for generating plasma in depositing films on a substrate. A RF power output is applied to a distributed RF matching network to excite a plasma from a process gas stream to deposit a uniform film onto the substrate. The distributed matching network includes a load capacitor for receiving a radio frequency power input and an inductor having first and second ends with the first end coupled to the load capacitor. The matching network also includes multiple drive capacitors each of which couples the second end of the inductor to a different one of multiple points distributed on the first electrode. The capacitance of each drive capacitor is user-selectable, and the points on the backing plate to which the drive capacitors are coupled are user-selectable.

Abstract: A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the lower electrode 28 is powered by a low frequency AC power supply, as well as a DC power supply. The reactor chamber 22 is configured with a solid source 50 of gaseous species and a protruding baffle 40. A nozzle 36 provides a jet stream of process gases in order to ensure uniformity of the process gases at the surface of a semiconductor wafer 48. The configuration of the plasma etch reactor 20 enhances the range of densities for the plasma in the reactor 20, which range can be selected by adjusting more of the power supplies 30, 32.

Abstract: Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

Abstract: A plasma system which is to be coupled to a power source, the plasma system including a chamber defining an internal cavity in which a plasma is generated during operation; a coil which during operation couples power from the power source into the plasma within the chamber, the coil having first and second terminals; a first capacitor which is coupled between the first terminal and a reference potential; and a second capacitor connected to the second terminal and through which the power source is coupled to the second terminal.

Abstract: A plurality of electrode bars are arranged in parallel with each other, and side electrode bars are connected to the corresponding opposite ends of the electrode bars, thereby forming a ladder-like RF discharge electrode. Power supply points are arranged axisymmetrically with respect to a reference line, which is a bisector which bisects one side of the RF discharge electrode, while being spaced a predetermined distance from the reference line, thereby suppressing voltage distribution on the ladder electrode, which has an effect on uniformity of discharge distribution, to a sufficiently low level of nonuniformity. Thus, uniform distribution of film deposition rate can be obtained, thereby enabling uniform deposition even in large-area applications.

Abstract: The invention solves the problem of continuously monitoring wafer temperature during processing using an optical or fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. This optical fiber is accommodated without disturbing plasma processing by providing in one of the wafer lift pins an axial void through which the optical fiber passes. The end of the fiber facing the wafer backside is coincident with the end of the hollow lift pin. The other end is coupled via an “external” optical fiber to temperature probe electronics external of the reactor chamber. The invention uses direct wafer temperature measurements with a test wafer to establish a data base of wafer temperature behavior as a function of coolant pressure and a data base of wafer temperature behavior as a function of wafer support or “puck” temperature.

Abstract: A properly designed and positioned Faraday shield/dielectric spacer/source-coil assembly is used to nearly fix the input impedance of an Inductively Coupled Plasma (ICP) source-coil, making a variable matching network almost unnecessary, and allowing for pulsed plasma processing with very little reflected power. Further, the nearly constant input-impedance also means a nearly constant standing wave pattern on the ICP source-coil and constant power deposition symmetry as well as plasma uniformity independent of RF power, gas pressure and gas composition. This is not possible without a properly designed and positioned Faraday shield because the source-coil impedance is coupled to that of the plasma and changes significantly with the plasma conditions.

Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate, forming an oxide layer in the substrate, and adding nitrogen atoms on top of the exposed surface of the oxide film to form a diffusion barrier.

Abstract: A remote plasma cleaning system includes a high conductance delivery line that delivers activated species from a remote plasma generator to a processing chamber. The delivery line preferably has a conductance of greater than 40 liters per second, enabling the power levels of the remote plasma generator to be maintained at less than about 3 kW. In one embodiment, activated species may be introduced into the processing chamber via one or more inlet ports disposed in a side portion of the processing chamber. In another embodiment, a coaxial inject/exhaust assembly enables activated species to be introduced into the processing chamber via an inner tube and gases to be exhausted from the processing chamber via an outer tube. Other embodiments incorporate an compound valve in the delivery system for selectively isolating the RPC chamber from the processing chamber and an optical baffle for protecting sensitive components of the isolation valve from exposure to ion bombardment and plasma radiation.

Abstract: Plasma processing is carried out at pressures of about atmospheric pressure, at pressures below atmospheric pressure, or at pressures above atmospheric pressure. The plasmas are generated using a RF power source and a rectangular waveguide. The plasmas can be used for applications such as materials processing and carrying out chemical reactions.

Abstract: Apparatus for radiating energy at one or more predetermined wavelength comprising: a housing (4), a source of microwave energy coupled to and located outside the housing and a window forming part of the wall of the housing, the window being formed from a material which is substantially transparent to radiation at the or each predetermined wavelength and at the wavelength of the microwave source, the window including gas of a predetermined composition at a predetermined pressure contained in a gas-tight enclosure (2) defined by the window material, the gas composition being chosen to emit energy at the or each predetermined wavelength in response to microwave energy from the housing (4) impinging generally on an inner surface of the window, the window being arranged substantially to be opaque at the wavelength of the microwave energy and being arranged to provide an unobstructed radiating path from its outer surface for the energy of the or each predetermined wavelength.

Abstract: The invention involves a process for the oxygen cutting of slabs—using one or more oxygen cutting torches—and a device for implementing the process. The process includes the steps of hanging the slab (16) using one or more electromagnets (14) separated from the slab (16) by a non-magnetic device or medium (such as air); causing a relative motion between the cutting torches (18) and the slab (16); using a carrying device (15) acting on the slab on the same side of the slab (16) as the electromagnet (14); and activating the cutting torch (18) in order to cut the slab (16) when it is transported past the cutting torch (18).

Abstract: To provide a production method of a structure with which a degradation of a processing speed is suppressed and plasma processing is performed with using a reliable plasma processing apparatus and which is excellent in repeatability, a plasma processing apparatus, which includes a container whose inside can be exhausted and a gas supply port for supplying a process gas to the container and subjects to plasma processing an object to be processed placed in the container, is characterized in containing a light shielding film that disturbs the incidence of light, which may increase dielectric loss of a permeable window, to this dielectric window on the internal surface of the permeable window permeating high frequency energy for generating the plasma of the above-described gas, and is provided in the above-described container.

Abstract: This invention provides a plasma reactor for modifying gas by plasma, including a first planar electrode and a second planar electrode, the two electrodes facing opposite each other approximately in parallel; a dielectric body inserted between the first and the second electrodes; and a complex barrier discharge-generating means for providing a predetermined electric potential difference between the first and the second electrodes; wherein the first and the second electrodes are provided so as to apply complex plasma discharge to the gas to be treated fed between the electrodes, to thereby modify the gas. According to the invention, gas modification efficiency can be remarkably improved.

Abstract: An apparatus and method for adjusting a distribution of a density of a plasma and/or a distribution of a chemical composition of a plasma, thereby adjusting the characteristics of a reaction used to process a substrate. The distribution of the density and/or the chemical composition are controlled by adjusting the geometry of recombination surfaces that are in contact with the plasma and which thereby stimulate the recombination of ions and electrons in particular regions of the plasma. For example, a recombination member (502) having a predetermined geometry can be provided in order to adjust the plasma density and chemistry in one or more local regions. In addition, plasma density can be adjusted by providing a conductive shield (1002) to reduce the coupling of RF power to particular regions of the plasma, thereby reducing plasma density in these regions. By adjusting the distribution of the density and chemical composition of a plasma, uniformity of a plasma processes (e.g.

Abstract: The present method of forming a silicon oxide layer comprises providing two frequency excitation plasma CVD device which comprises a high frequency electrode, a susceptor electrode, and two matching box for impedance matching between the electrodes and a power supply, wherein one side electrode constituting a tuning condenser of a matching box toward the high frequency electrode is the high frequency electrode; placing a substrate on the susceptor electrode; applying high frequency electric power on the high frequency electrode and the susceptor electrode respectively; and forming a silicon oxide layer on the substrate by generating plasma with using a reaction gas of which main reaction gas is a mixing gas of monosilane and nitrous oxide.

Abstract: In order to more accurately control the radiation characteristics of microwaves to improve the controllability of processing in radial and circumferential directions of an article, there are disclosed a microwave applicator and a plasma processing apparatus using the applicator, which comprise a circular waveguide having a surface provided with a plurality of slots for radiating microwaves, wherein the centers of the plurality of slots are offset in a direction parallel to the surface with respect to the center of the circular waveguide.

Abstract: Temperature control of a process chamber 25 is achieved by directing a flow of gas at an external surface 100 of the chamber 25. In one aspect, gas directed at the chamber 25 passes through a gas flow amplifier 115 that increases the gas flow. Gas for the temperature control can be drawn in from the ambient air and, after passing over the process chamber 25, the gas can flow out through an outlet 150. Data is presented demonstrating superior temperature control performance over a conventional system.

Abstract: A method for ashing a resist pattern covered by a hardened layer caused by an ion implantation process previously conducted including a first step for conducting an ashing process at a first temperature e.g. 120° C. or less at which no popping phenomenon happens, for removing the hardened layer, and a second step for conducting an ashing process at a second temperature e.g. 150° C. at which the ashing rate is high, for entirely removing the remaining resist pattern, and apparatus employable for the method for ashing a resist pattern covered by a hardened layer including a mechanism for moving up and down a semiconductor wafer to regulate the temperature of the semiconductor wafer and including a shutter which intervenes between the semiconductor wafer and a heater.

Abstract: Processing apparatus and methods are provided which involve the selective ionization of a feed material; the separation of ionized and non-ionized species; a selective excitation of the still ionized species; introduction of a chemical material to cause selective transition to a non-ionized state of part of the feed; and a further separation of ionized and non-ionized species. Other improvements in selective excitation based processing are also disclosed. Separation of isotopes and/or elements from one another and changing chemical and physical form is provided in a single process from a variety of feeds.

Abstract: A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber.

Abstract: An apparatus for ion beam neutralization is disclosed in this invention. The apparatus is a plasma flood source with an arc discharge chamber enclosed in a source housing with sufficient cooling so that the housing temperature is near room temperature. Arc discharge between a filament and the arc chamber ionizes the bleeding gas atoms or molecules in the arc chamber and produces plasma. The low energy electrons together with ions in the plasma drift out of the arc chamber and neutralize the passing ion beam. The sufficiently cooled source housing prevents radiation to the processed wafers, reduces metal particle concentration in the plasma and therefore metal contamination on the wafers, and keeps beamline pressure low while more electrons are extracted from the flood source through the apertures with larger area.

Abstract: A method for high-density plasma etching. A substrate is provided. A material layer is formed on the substrate. A patterned photo-resist layer is formed on the oxide layer. The material layer is patterned by the high-density plasma etching, simultaneously, a formation of a barrier layer over the substrate with the patterning process is suppressed and nitrogen gas generated in the patterned photo-resist layer is reduced.

Abstract: A method and apparatus for controlling a temperature of a wafer during processing such as in a gas plasma or nonplasma environment wherein a wafer is positioned on a chuck. The wafer is heated and a pressurized gas is introduced into a space between the wafer and the chuck such that the pressurized gas transfers heat from the wafer to the chuck. Pressure of the pressuried gas is automatically varied such that heat transfer between the wafer and the chuck is varied in response to a difference between an actual wafer temperature and a desired wafer temperature to maintain the desired wafer temperature.

Abstract: A plasma processing system provided with a vacuum chamber for accommodating a substrate and for generation of plasma in a space in the front of the same, an antenna provided at the vacuum chamber, and a high frequency power source for supplying high frequency power to the antenna. The antenna emits high frequency power, generates plasma inside the vacuum chamber, and processes the surface of the substrate by the plasma. In the plasma processing system, the antenna has a disk-shaped conductor plate having a predetermined thickness. A coaxial waveguide having a folded portion is formed around the disk-shaped conductor plate. The folded portion of the waveguide is provided with a short-circuit 3 dB directional coupler having an impedance matching function. The antenna having the above structure prevents the generation of a standing wave in the high frequency wave propagation path from the high frequency power source to the vacuum chamber and generates high density plasma by supply of a large power.

Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber of an inductively coupled plasma reactor which processes a semiconductor wafer in the vacuum chamber, the reactor having a gas supply inlet for supplying processing gases into the vacuum chamber, the coil antenna including plural concentric spiral conductive windings, each of the windings having an interior end near an apex of a spiral of the winding and an outer end at a periphery of the spiral of the winding, and a common terminal connected to the interior ends of the plural concentric spiral windings, the RF power source being connected across the terminal and the outer end of each one of the windings.

Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber of an inductively coupled plasma reactor which processes a semiconductor wafer in the vacuum chamber, the reactor having a gas supply inlet for supplying processing gases into the vacuum chamber, the coil antenna including plural concentric spiral conductive windings, each of the windings having an interior end near an apex of a spiral of the winding and an outer end at a periphery of the spiral of the winding, and a common terminal connected to the interior ends of the plural concentric spiral windings, the RF power source being connected across the terminal and the outer end of each one of the windings.

Abstract: Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

Abstract: A method and apparatus is presented for planarizing or polishing workpiece surfaces using an ion beam in the presence of a radio frequency generated plasma. A workpiece is placed in a holder within a vacuum chamber equipped with a radio frequency inductive plasma generator. The workpiece surface is exposed to a source of energetic ions, the chamber is filled with gas, and the gas is ionized with radio frequency energy to form inductive plasma that surrounds the workpiece. An ion beam mounted above the workpiece scans the workpiece surface with sufficient energy to remove micro irregularities from the workpiece surface.

Abstract: A discharge tube for a local etching apparatus has a portion positioned within a waveguide which is for the generation of plasma, the said portion being tapered so as to be divergent toward an orifice side of the discharge tube. Even in the event a maximum field strength position of a standing wave in the waveguide should be deviated due to a change in microwave transmission characteristic of the material of the discharge tube or a change in the position of a plunger under the influence of heat, the maximum field strength position lies somewhere in the vicinity of a wall surface of the tapered portion, so that a supplied gas is converted to plasma stably in a short time. When the discharge tube is to be cooled, the cooling can be done effectively with a cooling gas which is cooled by adiabatic expansion while passing through the tapered portion.

Abstract: A capacitively coupled RF plasma reactor allows treatment of large workpiece surfaces with an accurate control of ion bombardment onto the respective electrode surfaces and thus an adjacent workpiece, be it to a desired low or to a desired high level. The reactor includes a first and a second electrode arrangement mutually spaced and confining a plasma reaction volume, at lest one of the electrode arrangements comprising electrically mutually isolated sub-electrodes, a first group of the sub-electrodes being commonly connected to a first electric input, and a second group of the sub-electrodes being commonly connected to a second electric input. The reactor thus substitutes at least one of the two customarily used reactor electrodes by an array of sub-electrodes which, by way of their respective first and second electric inputs, may be independently and thus differently electrically operated, usually but not exclusively with RF voltages.

Abstract: A vaporizing apparatus has a vaporizing container into which a liquid raw material is introduced and which is made of metal, a heater for heating the vaporizing container to vaporize liquid introduced into the vaporizing container and a metal nozzle (an electrode) disposed in the vaporizing container in such a manner that the nozzle is electrically insulated from the vaporizing container. Moreover, the vaporizing apparatus has a cleaning-solution supply apparatus for supplying, to the inside portion of the vaporizing container, a cleaning solution for solving residues generated in the vaporizing container and a plasma generating power source for supplying high-frequency electric power to a position between the nozzle and the vaporizing container to generate plasma in the vaporizing container by using the vaporized cleaning solution.

Abstract: An ECR plasma CVD apparatus includes a cavity for producing an ECR plasma, a vacuum chamber connected to the cavity, a base plate holder for holding a base plate or substrate, an electrode plate, and a high frequency applying device for applying a high frequency current to the electrode plate. The electrode plate is disposed on a side opposite to the cavity with the base plate therebetween. The base plate is arranged parallel to the electrode plate with a predetermined space therebetween to generate an electrostatic coupling in the vacuum chamber. A high frequency current is applied to the electrode plate, so that the RF bias can be uniformly applied to the surface of a non-conductive base plate without contacting to thereby uniformly form a CVD membrane thereon.

Abstract: A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100° C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distance 32 from the edge-to-center of the upper and lower grid plates, 30 and 31, of a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.

Abstract: An aluminum nitride-based sintered body is disclosed, which includes aluminum nitride as a main ingredient and magnesium and has a polycrystalline structure composed of aluminum nitride crystals.

Abstract: A power segmented electrode useful as part of an upper electrode and/or substrate support for supporting a substrate such as a semiconductor wafer in a plasma reaction chamber such as a single wafer etcher. The power segmented electrode includes a plurality of electrodes which are supplied radiofrequency power in a manner which provides uniform processing of the substrate. The power to the electrodes can be supplied through a circuit incorporating interelectrode gap capacitance, one or more variable capacitors, one or more current sensors, a power splitter, one or more DC biasing sources, and/or power amplifier.

Abstract: Plasma processing apparatus frequently incorporates an antenna fed from a power supply and in this invention a power supply feeds a conventional matching circuit (10), which in turn is connected to the primary (11) of a transformer (12). The antenna (15) is coupled across the secondary winding (13) of the transformer (12) and that winding is tapped to ground at (16). This creates a virtual earth (17) near the mid point of the antenna (15) significantly reducing the variation, along the length of the antenna, in the power supplied to the plasma.

Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.

Abstract: The invention is embodied in an antenna for radiating RF power supplied by an RF source into a vacuum chamber, the antenna including plural concentrically spiral conductors, each having a first end located in a first common region and a second end located in a second common region, and each being wound about a common axis passing through both regions, the regions being concentric with the axis, the conductors being substantially the same length, substantially the same shape, and substantially evenly spaced with respect to each other about the common axis.

Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.

Abstract: A method and apparatus for launching microwave energy to a plasma processing chamber in which the required magnetic field is generated by a permanent magnet structure and the permanent magnet material effectively comprises one or more surfaces of the waveguide structure. The waveguide structure functions as an impedance matching device and controls the field pattern of the launched microwave field to create a uniform plasma. The waveguide launcher may comprise a rectangular waveguide, a circular waveguide, or a coaxial waveguide with permanent magnet material forming the sidewalls of the guide and a magnetization pattern which produces the required microwave electron cyclotron resonance magnetic field, a uniform field absorption pattern, and a rapid decay of the fields away from the resonance zone.

Abstract: A method for the incineration of a fluid or fluidizable material by use of a pulsed plasma is disclosed. The plasma is produced by a confined discharge in a closed chamber having an exit port and containing an ablating material. The method comprises the following steps: a) introducing the material into the chamber; and b) generating a plasma by ignition within the chamber thereby producing a flow of the plasma which incinerates the fluid material. Further described are a process for the detoxification of waste materials and a method for cracking a first compound in order to form a second compound using the method of the invention. A plasma incinerator is also described.

Abstract: An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.

Abstract: Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

Abstract: A heating/cooling apparatus for electronic components of a wireless base station is described. The apparatus includes a heat exchanger having a material-filled chamber and a plurality of extrusions. The chamber is located adjacent to the electronic components. A heater is provided within the chamber. The material within the chamber, which is preferably a liquid, serves to conduct heat from the electronic components to the extrusions. The heater serves to heat the material within the chamber, which in turn conducts that heat to the electronic components, when heat is required to maintain operation of the components with prescribed parameters.

Abstract: In plasma processing, a bias voltage is provided from a power supply through a DC blocking capacitor to a platform on which a substrate to be treated is supported within a plasma reactor. The periodic bias voltage applied to the DC blocking capacitor has a waveform comprised of a voltage pulse peak followed by a ramp down of voltage from a first level lower than the pulse peak to a second lower level, the period of the bias waveform and the ramp down of voltage in each cycle selected to compensate for and substantially cancel the effect of ion accumulation on the substrate so as to maintain a substantially constant DC self-bias voltage on the substrate between the voltage pulse peaks. The waveform may include a single voltage pulse peak followed by a ramp down in voltage during each cycle of the bias voltage such that the ion energy distribution function at the substrate has a single narrow peak centered at a selected ion energy.

Abstract: Many boards 7 to be processed are disposed within a metal chamber 1 in an isolated state, and many ground electrode plates 9 are disposed near by both surfaces of the boards 7 so as to be at the same potential as the chamber 1. While a microwave generated by a magnetron 3 from an upper portion of the chamber 1 is applied in the chamber 1, both surfaces of the boards 7 are processed at a time with plasma by using glow discharges produced between the boards 7 and plates 9 due to a difference in high-frequency potential between the boards 7 and plates 9 under presence of reaction gas.

Abstract: A CVD processing reactor employs a pyrometer to control temperature ramping. The pyrometer is calibrated between wafer processing by using a thermocouple that senses temperature during a steady state portion of a processing operation.