Abstract: A high flow rate, transportable, ultra high purity gas vaporization and supply system is provided which includes a vessel suitable for carrying large quantities of a liquefied gas, valves to operate with liquid or gas phases, a loading/unloading unit disposed on the vessel for loading and unloading the liquefied gas to be supplied, and a heater containing heating elements permanently positioned on the vessel to supply energy into the liquefied gas. The heater causes the liquefied gas to be supplied through the loading/unloading unit as a gas. A heater controller is also provided which uses process variables feedback for regulating the heating elements to maintain and regulate gas output.

Abstract: A plasma emitter apparatus and method for using the same that includes a primary electrode and a secondary electrode. The secondary electrode is porous, that is, it is configured to permit the passage of plasma discharge therethrough. Accordingly, the plasma is received at one side of the secondary electrode and emitted from its opposing plasma exiting side. Numerous configurations of the secondary electrode are possible so long as the plasma discharge is permitted to pass therethrough. For instance, the secondary electrode may be a laminate of multiple insulating material layers with at least one conductive layer sandwiched therebetween. A plurality of apertures are defined through the laminate and a dielectric sleeve is inserted into and retained in the aperture. The generated plasma passes through one or more holes defined in each of the dielectric sleeves.

Abstract: A plasma-assisted processing system has a lifting mechanism capable of vertically moving a microwave power unit and a waveguide to adjust the level of a planar slot antenna disposed on an expanded lower end part of the waveguide. A space extending under the antenna is surrounded by a shielding member. An optical sensor having an array of photosensors is disposed on the outer side of a window formed in the side wall of a vacuum vessel to monitor the lower limit level of a cease region for a plasma (cease level). An ideal distance between the cease level and the antenna is determined beforehand and the level of the antenna is adjusted on the basis of a measured cease level so that the antenna is spaced the ideal distance apart from the cease level. Since the difference between the cease level and a level X0 for the cutoff density of an X-wave is fixed, the level X0 may be monitored instead of the cease level.

Abstract: In accordance with one aspect of the invention, a plasma reactor has a capacitive electrode driven by an RF power source, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.

Abstract: A ceramic heater for heating a substrate in a semiconductor manufacturing apparatus is disclosed. The ceramic heater, which contains a thermal heat pipe made from Graphfoil embedded in, e.g., AIN, permits <1° C. temperature difference from the center to the edge of a substrate in a substrate holder.

Abstract: The present invention discloses an apparatus and method for sterilization of articles using capillary discharge atmospheric plasma. More specifically, an apparatus for sterilizing articles using substantially atmospheric pressure plasma includes a plasma generator generating the substantially atmospheric pressure plasma, wherein the plasma generator includes, first and second dielectrics facing into each other, wherein at least one capillary is formed in at least one of the dielectrics, and first and second electrodes on the first and second dielectric bodies, receiving the potential from the power supply, a processing chamber enclosing the plasma generator, and a power supply providing a potential to the plasma generator.

Abstract: A plasma reactor system with controlled DC bias for manufacturing semiconductor wafers and the like. The reactor system includes a plasma chamber, a plasma generating coil and a chuck including a chuck electrode. The chuck supports a workpiece within the chamber. The plasma reactor system further includes a pair of generators, one of which supplies a radio frequency signal to the plasma generating coil. The second generator delivers a RF signal which to the chuck electrode and acts to control DC bias at the workpiece. Peak voltage sensor circuitry and set point signal circuitry controls the power output of the generator, and a matching network coupled between the generator and the first electrode matches the impedance of the RF signal with the load applied by the plasma. DC bias determines the energy with which plasma particles impact the surface of a workpiece and thereby determines the rate at which the process is performed.

Abstract: Provided are a deposited film forming method and a deposited film forming apparatus capable of reducing discharge leakage and sparks and maintaining a stable discharge even with increase in conveyance speed, increase in film-forming speed, replacement of a roll, or the like. The deposited film forming method and apparatus is configured so that, while a belt-like member is continuously conveyed in a longitudinal direction thereof, the belt-like member is passed through a film-forming chamber, one side of which is formed of the belt-like member and which is placed in a vacuum-sealable reaction vessel, a reactive gas is introduced into the film-forming chamber, the interior of the film-forming chamber is evacuated by an evacuator to be maintained at a given pressure, a high-frequency power is introduced into the film-forming chamber to induce a plasma therein, and a deposited film is formed on the belt-like member passing through the film-forming chamber.

Abstract: The invention is embodied in an antenna for radiating RF power supplied by an RF source into a vacuum chamber, the antenna including plural concentrically spiral conductors, each having a first end located in a first common region and a second end located in a second common region, and each being wound about a common axis passing through both regions, the regions being concentric with the axis, the conductors being substantially the same length, substantially the same shape, and substantially evenly spaced with respect to each other about the common axis.

Abstract: The present invention is constituted of a lower electrode structure (1) comprising a base table (2) formed of a conductive material, an electrostatic adsorption member (3) formed on the base table (2) and having a dielectric layer (4) on which the substrate to be mounted and within which an electrode (5) electrically isolated from the base table (2) is housed, first wiring (7) having an end connected to the electrode (3) of the electrostatic adsorption member, a direct-current source (8) connected to the other end of the first wiring (7), second wiring (10) having an end connected to the base table (2), a high frequency source (11) connected to the other end of the second wiring (10), a third wiring (14) for connecting the first wiring (7) and the second wiring (10), and a capacitor (13) formed on the third wiring (14). Plasma processing is performed by disposing the lower electrode structure (1) in the chamber (21).

Abstract: A plasma processing method comprises the steps of supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of starting plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on the surface of the substrate.

Abstract: An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.

Abstract: In accordance with the present invention, a method is provided for dry cleaning a processing chamber. This method comprises the step of introducing a first cleaning process gas into the processing chamber. A plasma is formed from the first cleaning process gas and maintained for a first time period. Next, repeating the step of introducing the cleaning process gas, a second cleaning process gas is introduced into the processing chamber and maintained the plasma for a second time period. As a result, the present invention is capable of removing polymer built up on the processing chamber's interior surfaces to achieve a high yield and maintaining throughput of the substrates in the plasma processing system.

Abstract: A cleaning device with deeply reaching plasma and assisting electrodes has supporting racks, a chamber, a plasma sources, metallic grids. Flat boards to be cleaned such as circuit boards are located in the supporting racks. The supporting racks are disposed in the chamber. The metallic grids are disposed on two sides of the chamber. The plasma source is disposed next to the metallic grids. Electric voltage is applied to the metallic grids such that plasma from the plasma source can be pushed deeply into the supporting racks to evenly and sufficiently clean the circuit boards.

Abstract: A method of producing nanocrystalline ceramic powder by creating a plasma stream in a reactor vessel, and physically converting a ceramic precursor material into ceramic particles suspended in the vessel, using the plasma stream. A metallic reactant may additionally be introduced into the vessel using the plasma stream, wherein the metallic reactant forms ceramic particles having the same composition as the ceramic particles of the physical converting step. The plasma stream is created using an electrothermal gun. The gun may use a ceramic barrel which is eroded by the plasma stream. Alternatively (or additionally), the ceramic precursor material may be injected as particulates into the plasma stream, wherein the ceramic precursor particulates are micron-sized or larger. A novel electrothermal gun design may optionally use a replaceable insert constructed of the ceramic precursor material.

Abstract: A method and apparatus for treating a workpiece using capillary discharge plasma are disclosed in the present invention.

Abstract: A plasma processing system is comprised of a reaction vessel in which are provided a parallel high frequency electrode and ground electrode. The ground electrode is fixed at a ground potential portion, that is, a flange, by a conductive support column. A connection portion from the ground electrode to the ground potential portion, for example, the portions other than the surface of the ground electrode and the surface of the support column etc. are covered by an insulator serving as a high frequency power propagator while the surface of the insulator is covered completely by a conductive member except at the portion for introducing the high frequency power. In this plasma processing system, it is possible to reliably prevent undesirable discharge from occurring at the rear surface of the ground electrode when processing a substrate mounted on the ground electrode to deposit a film using a high frequency power in the VHF band.

Abstract: An apparatus and method is provided for rapid thermal processing (RTP) of semiconductor wafers that compensates for variations in heat absorption characteristics of the wafers. Wafer-to-wafer temperature variation is substantially eliminated using a model of the heat absorption characteristics of different wafer types to predict a steady state temperature of a wafer undergoing processing. This prediction is used to detect potential variations in wafer temperature during the RTP process and correct for these variations by adjusting the output of the heat source.

Abstract: A method of controlling an output of a generator is provided. The output provides an output signal having a settling time to a load having an impedance. The settling time of the output signal is determined. The output signal is amplitude modulated with a modulation waveform. A sense signal is generated that is representative of the modulated output signal. The sense signal is sampled at a sampling time based upon the settling time of the output signal. A digital representation of the sampled sense signal is generated. The amplitude modulation of the output is controlled based upon the digital representation of the sampled sense signal.

Abstract: A properly designed and positioned Faraday shield/dielectric spacer/source-coil assembly is used to nearly fix the input impedance of an Inductively Coupled Plasma (ICP) source-coil, making a variable matching network almost unnecessary, and allowing for pulsed plasma processing with very little reflected power. Further, the nearly constant input-impedance also means a nearly constant standing wave pattern on the ICP source-coil and constant power deposition symmetry as well as plasma uniformity independent of RF power, gas pressure and gas composition. This is not possible without a properly designed and positioned Faraday shield because the source-coil impedance is coupled to that of the plasma and changes significantly with the plasma conditions.

Abstract: A plasma arc torch that includes a torch body having a nozzle mounted relative to a composite electrode in the body to define a plasma chamber. The torch body includes a plasma flow path for directing a plasma gas to the plasma chamber in which a plasma arc is formed. The nozzle includes a hollow, body portion and a substantially solid, head portion defining an exit orifice. The composite electrode can be made of a metallic material (e.g., silver) with high thermal conductivity in the forward portion electrode body adjacent the emitting surface, and the aft portion of the electrode body is made of a second low cost, metallic material with good thermal and electrical conductivity. This composite electrode configuration produces an electrode with reduced electrode wear or pitting comparable to a silver electrode, for a price comparable to that of a copper electrode.

Abstract: A system for converting DC power (22) into an RF electromagnetic field in a processing chamber, the system being composed of: a coil (16) constructed to surround the processing chamber; and an RF power generator (20) including a free-running oscillator (26) having a DC power input and an RF power output, the power output connected to a load impedance which includes the coil for supplying RF current to the coil at a frequency which is dependent on the load impedance.

Abstract: An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.

Abstract: The apparatus for etching a thin film using the plasma includes a reaction chamber having a diffusion area and a reaction area; an upper electrode disposed in the top of the reaction area; a lower electrode spaced apart from the upper electrode and arranged at the bottom of the reaction area; a RF power supply applying RF power to the upper and lower electrodes so as to form the plasmas between the upper and lower electrodes; a gas inlet applying processing gases to the diffusion area; gas-exhausting members sucking the residual plasmas and byproducts of the plasma etch; a buffer plate surrounding the lower electrode at the bottom of the reaction chamber and having a plurality of vent holes and vent hole protectors; and a shielding member between the lower electrode and the buffer plate, the shielding plate protecting the lower electrode from the plasmas.

Abstract: Methods for monitoring power supplied to a substrate to form a doped or undoped crystalline semiconductor material are disclosed. The methods include providing a layer of an amorphous semiconductor material, doped or undoped, on a substrate and heating the substrate while monitoring the power applied to a heating element to heat the substrate so as to maintain a desired temperature. A decrease in the power supplied to the substrate is indicative of a conversion of the amorphous semiconductor material to a crystalline form thereof, at which time the power supplied to the heating element is terminated. By selecting the degree of crystallinity of the layer of doped or undoped amorphous semiconductor material on a substrate, the grain size of the resulting crystalline material can be controlled.

Abstract: A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency.

Abstract: A plasma processing apparatus has a vacuum vessel 2, an annular, transparent plate 23 put on the upper open end of the vacuum vessel 2 and a shower head 50 fitted in an opening formed in a central part of the annular transparent plate 23. A waveguide 25 has an outer guide member 25b and an inner guide member 25a connected to the shower head 50. Film forming gases including a CF gas is supplied through the inner guide member 25a and the shower head 50 into the vacuum vessel 2. A plasma producing gas, such as Ar gas, is supplied through an opening formed in the side wall at a position above the ECR point into the vacuum vessel 2. Active species of the film forming gases are distributed uniformly over the surface of a wafer. The interior of the shower head 50 formed of a metal is not contaminated with particles because the plasma does not flow into the shower head 50.

Abstract: A plasma processing apparatus includes upper and lower electrodes opposed to each other in an evacuated vessel, a first high-frequency power supply for applying power having a frequency of 27.12 MHz to the lower electrode, a second high-frequency power supply for applying power having a frequency of 3.1 MHz thereto, and a dipole ring for forming a magnetic field between the upper and lower electrodes.

Abstract: A plasma processing apparatus for performing plasma processing of an article, comprising: a central electrode; a tubular outer electrode which is provided so as to surround the central electrode; a tubular reaction pipe which is disposed between the central electrode and the outer electrode so as to electrically insulate the central electrode and the outer electrode from each other; a gas supply device for supplying a plasma producing gas to a discharge space defined between the central electrode and the outer electrode in the reaction pipe; an AC power source for applying an AC voltage between the central electrode and the outer electrode; wherein not only the plasma producing gas is supplied to the discharge space by the gas supply device but the AC voltage is applied between the central electrode and the outer electrode by the AC power source so as to generate a glow discharge in the discharge space under atmospheric pressure such that a plasma jet is blown to the article from a blow-off outlet of the reac

Abstract: A discharge tube for a local etching apparatus has a portion positioned within a waveguide which is for the generation of plasma, the said portion being tapered so as to be divergent toward an orifice side of the discharge tube. Even in the event a maximum field strength position of a standing wave in the waveguide should be deviated due to a change in microwave transmission characteristic of the material of the discharge tube or a change in the position of a plunger under the influence of heat, the maximum field strength position lies somewhere in the vicinity of a wall surface of the tapered portion, so that a supplied gas is converted to plasma stably in a short time. When the discharge tube is to be cooled, the cooling can be done effectively with a cooling gas which is cooled by adiabatic expansion while passing through the tapered portion.

Abstract: A plasma processing method includes supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of staring plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on a surface of the substrate. A plasma processing apparatus is also provided.

Abstract: A plasma processing apparatus has a plasma processing chamber, a radiofrequency generator, and an matching circuit. The plasma processing chamber includes a plasma excitation electrode and a susceptor electrode for exciting a plasma. The radiofrequency generator is connected to plasma excitation electrode. The matching circuit matches the impedance between the plasma processing chamber and the radiofrequency generator. A capacitance which is 26 times a plasma electrode capacitance Ce between the plasma excitation electrode and the susceptor electrode is greater than a loss capacitance CX between the plasma excitation electrode and ground potential positions which are DC-grounded.

Abstract: On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.

Abstract: The present invention relates to the production of ultrafine powders using a microwave plasma apparatus and chemical synthesis technique. Microwaves generated by a magnetron (1) are passed through waveguides (2) before they arrive at the head of a plasmatron (3). These high energy microwaves ionize a plasma gas, thus releasing large amounts of energy. The energy thus released is utilized to initiate and sustain chemical reactions between the desired elements being pumped in a spiral pattern into the plasmatron (3). The reaction products are quenched rapidly in a reactor column (4) into ultrafine powders.

Abstract: The invention provides apparatus having a series of individual plasma excitation devices each constituted by a wire applicator of microwave energy, having one end connected to a source for producing microwave energy and having an opposite end fitted with at least one magnetic dipole for creating at least one surface having a magnetic field that is constant and of intensity corresponding to electron cyclotron resonance, the dipole being mounted at the end of the microwave applicator in such a manner as to ensure that electrons accelerated to electron cyclotron resonance oscillate between the poles so as to create a plasma diffusion zone situated on the side of the dipole that is remote from the end of the applicator, the individual excitation devices being distributed relative to one another and in proximity with the work surface so as to create together a plasma that is uniform for the work surface.

Abstract: A system and method for preserving stored foods. The system and method utilizes an apparatus for generating ozone and other atoms and molecules resulting from the bombardment of a feed gas with electrons having, preferably, a first electrode positioned within a channel in a second electrode. The first electrode is a substantially sealed tube made of dielectric material, having at least one electron gun positioned proximate an end thereof for firing electrons into the first electrode. In electrical communication with the electron gun is a rod, maintained in a tube also made of dielectric material, which acts to maintain a constant energy level through the length of the rod and thus the length of the electrode. Within the first electrode is an inert gas which, upon the firing of the electron gun, is formed into a plasma.

Abstract: A method and apparatus for integrating multipolar confinement with permanent magnetic electron cyclotron resonance plasma sources to produce highly uniform plasma processing for use in semiconductor fabrication and related fields. In a preferred embodiment, the plasma processing apparatus includes a vacuum chamber, a workpiece stage within the chamber, a permanent magnet electron cyclotron resonance plasma source directed at said chamber, and a system of permanent magnets for plasma confinement about the periphery of said chamber. The permanent magnets for plasma confinement are arranged in a multiplicity of rings with the plane of the rings perpendicular to the vacuum chamber axis and to the direction of propagation of the microwave into the vacuum chamber. The number of rings is chosen with respect to the vacuum chamber dimensions to produce a large, low magnetic field region in the region of the vacuum chamber adjacent to the workpiece stage.

Abstract: There is disclosed an apparatus for production of nanosized particulate matter by vaporization of solid materials, comprising a first chamber (14), a vacuum pump (15) connected to the first chamber (14), a body (2) inserted in the first chamber (14), a cavity (3) formed in the body (2), means (7, 9) for in-feeding a gas flow (8) to the cavity (3), an anode (4) and a cathode (5) partly inserted in the cavity (3), a power supply (6) to apply a voltage between the anode (4) and cathode (5), and a nozzle (11) communicating with the cavity (3) and conveying a beam (12) of particles consisting of vaporized material from the cathode (5), the cathode (5) being disposed facing the gas flow (8) to intercept the latter, and the anode (4) and cathode (5) being positioned so as to allow propagation of an electrical discharge to the gas flow (8) and ionization of the gas itself.

Abstract: An apparatus and method which uses a plasma having a density gradient in order to accelerate ions, thereby producing a flow of energetic ions and neutral parties. The plasma gradient is produced by applying a non-uniform magnetic field to the plasma and/or providing non-uniform RF power to the plasma. Since the voltage within a plasma (i.e. the plasma potential) is dependent upon the density of the plasma, the plasma gradient produces an electric field within the plasma, which can be used to accelerate ions e.g., toward a substrate. This technique produces accelerated particles of lower energy than conventional systems, thereby causing less damage to a work piece being processed. In addition, since the ions accelerated by the apparatus have lower speeds than those accelerated by conventional systems, a larger proportion of the ions having time to recombine with free electrons before striking the work piece being processed.

Abstract: A plasma torch with a microwave transmitter which, for example, is used to coat surfaces and to produce radicals. The plasma torch exhibits a minimal energy loss during the transmission of microwaves to the produced plasma flame. The plasma torch includes a waveguide for transmitted microwaves and has a coaxial conductor. An electrode is provided with a duct, and a nozzle provided on the other end of the duct, the end facing away from the waveguide, are arranged in the coaxial conductor in an essentially axial manner. The plasma flame is produced at the nozzle. A coupling element is arranged between the waveguide and the coaxial conductor. The electrode is connected to the coupling element via a mounting plate and an electrically insulating intermediate element in a gas tight, thermally insulated manner such that microwaves are permitted to pass through.

Abstract: An improved toroidal low-field plasma source allows plasma ignition within a wider range of gas conditions than permitted by prior art plasma sources. Power efficiency of the plasma source is improved by automatically adjusting the power delivered to the plasma based on the load to the power supply. The plasma source can be operated over a wider pressure range than allowed by prior art plasma sources. The plasma source can be operated so as to increase the output of atomic species from the source. The plasma source can be operated to increase the etch rate of organic materials. The plasma source can efficiently remove hazardous gas compounds from effluent gas streams by converting them into scrubbable products.

Abstract: A process for synthesizing nanosized powders utilizes a hybrid exploding wire device containing a solid metal wire fuse in the bore of a tube that is open at each end. The ends of the fuse are connected to electrodes on the ends of the tube. The electrodes are designed to erode to maintain a heavy metal plasma. The bore may comprise a corresponding ceramic to be produced, and a microcrystalline powder of a corresponding ceramic may be retained within the bore. An electrical discharge vaporizes and ionizes the fuse. The tube confines the radial expansion of the plasma such that the plasma exits from both ends of the tube where it reacts with a suitable gas to form nanoscale particles. In addition, the plasma gas ablates and vaporizes a portion of the bore wall to contribute to the nanoceramic synthesis. Other alternatives include replacing the fuse with a thin conductive sheath or a consumable metal insert.

Abstract: A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an annular antenna 73 arranged on the sealing plate 55 and consisting of an annular waveguide to introduce a microwave into the processing container 53 through the sealing plate 55, the annular antenna 73 being arranged so that a plane containing an annular waveguide path defined by the annular waveguide is generally parallel with the sealing plate 55, a directional coupler 79 arranged on the periphery of the annular antenna 73, a propagation waveguide 81 connected to the directional coupler 79 and a microwave oscillator 83 connected to the propagation waveguide 81. Accordingly, it is possible to form an uniform microwave in the antenna, so that an uniform plasma can be produced in the processing container.

Abstract: An apparatus for distributing RF power outputs to a first electrode in a parallel plate electrode system for generating plasma in depositing films on a substrate. A RF power output is applied to a distributed RF matching network to excite a plasma from a process gas stream to deposit a uniform film onto the substrate. The distributed matching network includes a load capacitor for receiving a radio frequency power input and an inductor having first and second ends with the first end coupled to the load capacitor. The matching network also includes multiple drive capacitors each of which couples the second end of the inductor to a different one of multiple points distributed on the first electrode. The capacitance of each drive capacitor is user-selectable, and the points on the backing plate to which the drive capacitors are coupled are user-selectable.

Abstract: The present invention generally provides a substrate processing system having a thermally conductive and electrically insulative member coupled to a heated member that provides for heat dissipation from the heated member. In a preferred embodiment, the present invention provides for heat dissipation through thermal conductance of an electrically insulated coil in an IMP reaction chamber.

Abstract: An improved toroidal low-field plasma source allows plasma ignition within a wider range of gas conditions than permitted by prior art plasma sources. Power efficiency of the plasma source is improved by automatically adjusting the power delivered to the plasma based on the load to the power supply. The plasma source can be operated over a wider pressure range than allowed by prior art plasma sources. The plasma source can be operated so as to increase the output of atomic species from the source. The plasma source can be operated to increase the etch rate of organic materials. The plasma source can efficiently remove hazardous gas compounds from effluent gas streams by converting them into scrubbable products.

Abstract: A plasma processing system provided with a vacuum chamber for accommodating a substrate and for generation of plasma in a space in the front of the same, an antenna provided at the vacuum chamber, and a high frequency power source for supplying high frequency power to the antenna. The antenna emits high frequency power, generates plasma inside the vacuum chamber, and processes the surface of the substrate by the plasma. In the plasma processing system, the antenna has a disk-shaped conductor plate having a predetermined thickness. A coaxial waveguide having a folded portion is formed around the disk-shaped conductor plate. The folded portion of the waveguide is provided with a short-circuit 3 dB directional coupler having an impedance matching function. The antenna having the above structure prevents the generation of a standing wave in the high frequency wave propagation path from the high frequency power source to the vacuum chamber and generates high density plasma by supply of a large power.

Abstract: An electrostatic chuck, disposed within a processing chamber, receives a substrate and signals to selectively grip and release the substrate. A radio frequency power supply creates and passes a first signal to a first path that passes it to a high pass filter. The high pass filter inhibits signals lower than a first frequency from passing to the radio frequency power supply through the first path, and passes the first signal to a second path. The second path passes the first signal to a first electrode in the processing chamber, which emits the first signal within the processing chamber. A second electrode is also disposed within the processing chamber. The second electrode receives a second signal, and emits the second signal within the processing chamber. The emission of the first and second signals creates a plasma from the environment within the processing chamber.

Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.

Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.