Abstract: Methods of orientation imaging microscopy (OIM) techniques generally performed using transmission electron microscopy (TEM) for nanomaterials using dynamical theory is presented. Methods disclosed may use a wide angle convergent beam electron diffraction for performing OIM by generating a diffraction pattern having at least three diffraction discs that may provide additional information that is not available otherwise.

Abstract: A transmission electron microscope includes an electron beam source to generate an electron beam. Beam optics are provided to converge the electron beam. An aberration corrector corrects the electron beam for at least a spherical aberration. A specimen holder is provided to hold a specimen in the path of the electron beam. A detector is used to detect the electron beam transmitted through the specimen. The transmission electron microscope may operate in an incoherent mode and may be used to locate a sequence of objects on a molecule.

Abstract: One embodiment relates to a tilt-imaging scanning electron microscope apparatus. The apparatus includes an electron gun, first and second deflectors, an objective electron lens, and a secondary electron detector. The first deflector deflects the electron beam away from the optical axis, and the second deflector deflects the electron beam back towards the optical axis. The objective lens focuses the electron beam onto a spot on a surface of a target substrate, wherein the electron beam lands on the surface at a tilt angle. Another embodiment relates to a method of imaging a surface of a target substrate using an electron beam with a trajectory tilted relative to a substrate surface. Other embodiments and features are also disclosed.

Abstract: A plasma system for changing a microscopy material sample comprises a microscopy material sample holder for holding a microscopy material sample in place in a desired orientation, and a receptacle holder for receiving the sample holder and an RF antenna. The microscopy sample is positioned relative to the antenna so that no point on the antenna is in direct line-of-sight contact with the microscopy sample. This feature of avoiding direct line-of-sight contact between the antenna and the sample assists in preventing, or at least minimizing, ion sputtering of system component material onto the specimen or sample 10 that is being trimmed. Moreover, portions of the system which are in direct line-of-sight contact with the sample are comprised of material having a low sputtering yield, preferably carbon. The material may comprise graphite, and may be in the form of a carbon coating or a carbon paint.

Abstract: Methods for detecting an electron beam of a SEM and for detecting fine patterns are provided. Line patterns having a length in a first direction can be formed on a detection sample. A power spectral density (PSD) curve of a standardized model, formed under a same exposure process of the detection sample, can be obtained. An edge contour of each line pattern of the detection sample can be obtained by the SEM and can be sampled at a sampling frequency to obtain a variation range at a sampling point on the edge contour in a second direction that is perpendicular to the first direction. A PSD curve of the detection sample can be obtained according to the variation range and can be compared with the PSD curve of the standardized model to determine whether an electron beam of the SEM has a high quality in the second direction.

Abstract: A method of axially aligning a charged particle beam involves an image data acquisition step and a calculation step. The image data acquisition step consists of obtaining first to third sets of image data by scanning a shielding member placed in the path of the beam with the beam while varying conditions of the excitation currents through first and second alignment coils, respectively. The calculation step consists of calculating the values of the excitation currents through the first and second alignment coils, respectively, for axial alignment of the beam, based on the obtained first to third sets of image data.

Abstract: An image acquisition condition necessary to so arrange FOV's as not to overlap along a device shape so that all constituent arreas necessary for electric characteristic measurement may be confined in the FOV's is determined from device shape information (including circuit design data and layout design data) possessed by CAD data. Since, contingently upon the shape of a wiring portion, the wiring portion of a device is expressed by using a plurality of basic constituent figures in combination, a process of arranging FOV's to the individual constituent figures is executed. For a cell portion, a FOV is arranged in reference to a cell outer frame and apexes. At that time, any apex is a starting point of the FOV arrangement process and another apex is an end point of the same process.

Abstract: The invention relates to a method of performing tomographic imaging of a sample comprising providing a beam of charged particles; providing the sample on a sample holder that can be tilted; in an imaging step, directing the beam through the sample to image the sample; repeating this procedure at each of a series of sample tilts to acquire a set of images; in a reconstruction step, mathematically processing images from said set to construct a composite image, whereby in said imaging step, for a given sample tilt, a sequence of component images is captured at a corresponding sequence of focus settings; and in said reconstruction step, for at least one member of said series of sample tilts, multiple members of said sequence of component images are used in said mathematical image processing. This renders a 3D imaging cube rather than a 2D imaging sheet at a given sample tilt.

Abstract: The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution.

Abstract: An improved method for extracting and handling multiple samples for S/TEM analysis is disclosed. Preferred embodiments of the present invention make use of a micromanipulator that attaches multiple samples at one time in a stacked formation and a method of placing each of the samples onto a TEM grid. By using a method that allows for the processing of multiple samples, the throughput of sample prep in increased significantly.

Abstract: An electron microscope is described. This electron microscope includes an electron emitter that has an evaporation or sublimation rate that is significantly less than that of tungsten at the reduced pressures around the electron emitter during operation of the electron microscope. As a consequence, the electron microscope may be able to operate at reduced pressures that are much larger than those in existing electron microscopes. For example, at least during the operation the reduced pressure in the electron microscope may be greater than or equal to a medium vacuum. This capability may allow the electron microscope to use a roughing pump to provide the reduced pressure, thereby reducing the cost and complexity of the electron microscope, and improving its reliability. In addition, the size of the electron microscope may be reduced, which may enable a hand-held or portable version of the electron microscope.

Abstract: Provided is a charged particle radiation device enabling suppression of both inclination and vertical vibration of a charged particle optical lens barrel, with a simple configuration. A charged particle radiation device according to the present invention includes a vibration damping member (19) including viscoelastic material sheets (16A and 16B) sandwiched by support plates (17A and 17B), and is configured so that a plane including a sheet surface of each viscoelastic material sheet is not perpendicular to a center axis of the charged particle optical lens barrel.

Abstract: Provided is a sample device for a charged particle beam, which facilitates the delivery of a sample between an FIB and an SEM in an isolated atmosphere. An atmosphere isolation unit 10 for putting a lid 9 on an atmosphere isolation sample holder 7 isolated from the air and taking the lid 9 off the sample holder, is provided in a sample exchanger 5 that communicates with a sample chamber 4 of the FIB 1 or the SEM through a gate; and the lid 9 is taken off only by pushing a sample exchange bar 11, and thereby only the sample holder 7 is set in the sample chamber 4.

Abstract: An optical system includes a beam splitter disposed along an optical axis and a set of mirrors optically coupled to the beam splitter. The set of mirrors are oriented perpendicular to each other. The optical system also includes a turning mirror optically coupled to a second mirror of the set of mirrors and a detector optically coupled to the turning mirror.

Abstract: A method of determining an applicable threshold for determining the critical dimension of a category of patterns imaged by atomic force scanning electron microscopy is presented. The method includes acquiring, from a plurality of patterns, a pair of images for each pattern; for each pair of images determining a reference critical dimension via an image obtained by a reference instrumentation and determining an empirical threshold applicable to an image obtained by a CD-SEM instrumentation such that the empirical threshold substantially corresponds to the reference critical dimension; determining a threshold applicable to a category of patterns, the threshold being determined from a plurality of empirical thresholds.

Abstract: An apparatus is disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a means is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

Abstract: A sequential radial mirror analyzer (RMA) (100) for facilitating rotationally symmetric detection of charged particles caused by a charged beam incident on a specimen (112) is disclosed. The RMA comprises a 0V equipotential exit grid (116), and a plurality of electrodes (119, 120a, 120b, 120c) electrically configured to generate corresponding electrostatic fields for deflecting at least some of the charged particles of a single energy level to exit through the exit grid (116) to form a second-order focal point on a detector (106). The second-order focal point is associated with the single energy level, and the detector (106) is disposed external to the corresponding electrostatic fields. A related method is also disclosed.

Abstract: A diffraction aberration corrector formed by the multipole of the solenoid coil ring and having a function of adjusting the degree of orthogonality or axial shift of the vector potential with respect to the beam axis. In order to cause a phase difference, the diffraction aberration corrector that induces a vector potential, which is perpendicular to the beam axis and has a symmetrical distribution within the orthogonal plane with respect to the beam axis, is provided near the objective aperture and the objective lens. A diffracted wave traveling in a state of being inclined from the beam axis passes through the ring of the magnetic flux. Since the phase difference within the beam diameter is increased by the Aharonov-Bohm effect due to the vector potential, the intensity of the electron beam on the sample is suppressed.

Abstract: A method is described for correlating microscopy images from a number of modalities in a sub diffraction resolution environment. The method may include receiving a number of datasets that may represent microscopy captures from a number of different modalities. The microscopy captures may contain feature markers that may be used to register a number of data points contained in a dataset with data points from another dataset. Upon registering the data points of the datasets, a combined dataset may be produced and a visual image of the combined dataset may be provided.

Abstract: In one embodiment, a sample processing method includes placing a sample on a sample placing module, and setting first processing boxes on one side of slice formation scheduled regions of the sample, and second processing boxes on the other side thereof. The method includes processing the sample by performing a primary scan which sequentially scans the first processing boxes with a continuously generated ion beam, and a secondary scan which sequentially scans the second processing boxes with a continuously generated ion beam, to form slices of the sample. The primary and secondary scans are performed so that a first scanning condition for scanning first regions within the first and second processing boxes is set different from a second scanning condition for scanning second regions between the first processing boxes and between the second processing boxes, to allow frame portions of the sample to remain in the second regions.

Abstract: A method for measuring a size of a specimen is provided. A first projected width of the specimen is obtained at a first angle with the help of an energy source then a second projected width of the specimen is obtained at a second angle with the help of the energy source. The first projected width, the first angle, the second projected width and the second angle are co-related to indirectly obtain a size of the specimen which has not been measured. The un-measured size is not directly involved with the first projected width and the second projected width.

Abstract: One embodiment relates to a method of reviewing defects using a scanning electron microscope (SEM). A defect location having a defect for review is selected, and the SEM is configured to be in a first imaging configuration. The selected defect location is imaged using the SEM to generate a first SEM image of the selected defect location. A determination is made as to whether the defect is visible or non-visible in the first SEM image. If the defect is non-visible in the first SEM image, then the SEM is configured to be into a second imaging configuration, the selected defect location is imaged using the SEM to generate a second SEM image of the selected defect location, and a further determination is made as to whether the defect is visible or non-visible in the second SEM image. Other embodiments, aspects and features are also disclosed.

Abstract: A method and an apparatus for monitoring an electron beam condition of an SEM are provided. The SEM includes an electron gun and an electromagnetic lens system. The method includes acquiring quality parameters of an input electron beam, wherein the input electron beam is provided by the electron gun to the electromagnetic lens system, acquiring a current set of operation parameters of the electromagnetic lens system, calculating quality parameters of an output electron beam of the electromagnetic lens system, based on the quality parameters of the input electron beam and one or more operation parameters of the current set of operation parameters, and determining, based on the quality parameters of the output electron beam, whether calibration of the SEM is required.

Abstract: A scanning transmission electron microscope equipped with an aberration corrector is capable of automatically aligning the position of a convergence aperture with the center of an optical axis irrespective of skill and experience of an operator. The scanning transmission electron microscope system includes an electron source; a condenser lens configured to converge an electron beam emitted from the electron source; a deflector configured to cause the electron beam to perform scanning on a sample; an aberration correction device configured to correct an aberration of the electron beam; a convergence aperture configured to determine a convergent angle of the electron beam; and a detector configured to detect electrons passing through or diffracted by the sample. The system acquires information on contrast of a Ronchigram formed by the electron beam passing through the sample, and determines a position of the convergence aperture on the basis of the information.

Abstract: A charged particle filter with an integrated energy filter, in which the charged particle emitter, the focusing electrodes, and the deflection electrodes are arranged round a straight axis. Where most energy filters used have a highly curved optical axis, and thus use parts with forms that are difficult to manufacture, the source according the invention uses electrodes surrounding a straight optical axis. A beam of charged particles can be deflected quite far from the axis showing respectable energy dispersion at an energy selecting slit without introducing coma or astigmatism that cannot be corrected, provided that some of the are formed as 120°/60°/120°/60°. Such electrodes can be attached to each other by gluing or brazing of ceramic, and then series of a highly concentric bores can be formed by, e.g., spark erosion.

Abstract: Provided is a charged particle beam apparatus or charged particle microscope capable of observing an observation target sample in an air atmosphere or a gas environment without making significant changes to the configuration of a conventional high vacuum charged particle microscope. In a charged particle beam apparatus configured such that a thin film (10) is used to separate a vacuum environment and an air atmosphere (or a gas environment), an attachment (121) capable of holding the thin film (10) and whose interior can be maintained at an air atmosphere or a gas environment is inserted into a vacuum chamber (7) of a high vacuum charged particle microscope. The attachment (121) is vacuum-sealed and fixed to a vacuum partition of the vacuum sample chamber. Image quality is further improved by replacing the atmosphere in the attachment with helium or a light-elemental gas that has a lower mass than atmospheric gases such as nitrogen or water vapor.

Abstract: A method of processing a TEM-sample, wherein the method comprises: mounting an object in a particle beam system such that the object is disposed, in an object region of the particle beam system; directing of a first particle beam onto the object region from a first direction, wherein the first particle beam is an ion beam; and then rotating the object about an axis by 180°, wherein the following relation is fulfilled: 35°???55°, wherein ? denotes a first angle between the first direction and the axis; and then directing of the first particle beam onto the object region from the first direction; wherein material is removed from the object during the directing of the first particle beam onto the object region. Furthermore, a second particle beam may be directed onto the object region, and particles emanating from the object region can be detected.

Abstract: A method of examining a sample using a charged-particle microscope, comprising mounting the sample on a sample holder; using a particle-optical column to direct at least one beam of particulate radiation onto a surface S of the sample, thereby producing an interaction that causes emitted radiation to emanate from the sample; using a detector arrangement to detect at least a portion of said emitted radiation, the method of which comprises embodying the detector arrangement to detect electrons in the emitted radiation; recording an output On of said detector arrangement as a function of kinetic energy En of said electrons, thus compiling a measurement set M={(On, En)} for a plurality of values of En; using computer processing apparatus to automatically deconvolve the measurement set M and spatially resolve it into a result set R={(Vk, Lk)}, in which a spatial variable V demonstrates a value Vk at an associated discrete depth level Lk referenced to the surface S, whereby n and k are members of an integer sequenc

Abstract: There is provided an image-reconstruction system capable of implementing a multi-axes reconstruction technique for lessening a burden on the part of a user, and precluding artifacts high in contrast, contamination of a sample, and restrictions imposed on a sample for use, occurring due to use of markings. A plurality of tilt-images photographed by tilting a sample at sample-tilt axes, differing from each other; are acquired, misregistration is corrected by a rotation step-angle, a rotated object under observation is tilted in angle-steps, differing from each other, to pick up images thereof, two reconstruction images obtained by correcting respective misregistrations of two reconstruction images created from respective tilt-image groups are created, and one reconstruction image is created by superimposing one of the two reconstruction images on the other.

Abstract: Provided is a scanning electron microscope equipped with a high-speed and high-precision astigmatism measuring means to be used when both astigmatism generated by an electron-beam column and astigmatism generated from the surroundings of a measuring sample exist. This scanning electron microscope is characterized in controlling an astigmatism corrector (201) with high-speed and high-precision, to correct the astigmatism, by using both a method of obtaining the astigmatism from the qualities of two-dimensional images to be acquired upon changing the intensity of the astigmatism corrector (201), and a method of measuring the astigmatism from the change in the position displacement of an electron beam that occurs when the electron beam is tilted using a tilt deflector (202).

Abstract: This electron microscope (20) comprises: a first imaging device (291); a second imaging device (240) that can be moved away from transmitted light (P); and another detection device (260). The second imaging device is disposed in an observation chamber (230) above the first imaging device, and an attachment portion (231) of the other detection device is disposed at a position rotated 90 degrees from the attachment position of the second imaging device on the same plane on which the second imaging device is disposed. Thus, the second imaging means and the other detector can be attached compactly to the observation chamber disposed on the table surface of a mount housing, whereby an electron microscope can be provided in which workability of the devices and effective use of the table surface are achieved.

Abstract: This invention relates to a method of examining a sample using a charged-particle microscope. This invention solves the problem of occlusion effects, whereby a given line-of-sight behind a particular region on a sample and a given detector is blocked by a topographical feature on the sample, thus hampering detection of the emitted radiation emanating from the occluded region. This problem is solved by using at least a first and second detector configuration to detect each portion of the emitted radiation and to produce at least a first and second corresponding image based thereupon; and using computer processing apparatus to automatically compare different members of the set of corresponding images and mathematically identify on the sample at least one occlusion region with an occluded line-of-sight relative to at least one of the detector configurations.

Abstract: A charged particle beam apparatus which is able to adjust charged particle optics easily in a short time with a high degree of accuracy and a method of adjusting charged particle optics are provided.

Abstract: An object of the invention is to reduce the beam drift in which the orbit of the charged particle beam is deflected by a potential gradient generated by a nonuniform sample surface potential on a charged-particle-beam irradiation area surface, the nonuniform sample surface potential being generated by electrification made when observing an insulating-substance sample using a charged particle beam. Energy of the charged particle beam to be irradiated onto the sample is set so that generation efficiency of secondary electrons generated from the sample becomes equal to 1 or more. A flat-plate electrode (26) is located in such a manner as to be directly opposed to the sample. Here, the flat-plate electrode is an electrode to which a voltage can be applied independently, and which is equipped with a hole through which a primary charged particle beam can pass. Furthermore, a voltage can be applied independently to a sample stage (12) on which the sample is mounted.

Abstract: A scanning electron microscope and an optical-condition setting method are provided. The optical condition allows the suppression of a lowering in the measurement and inspection accuracy caused by the influence of electrification, even if there are a large number of measurement and inspection points. A pattern on a sample is measured based on the detection of electrons by scanning the sample surface with an electron beam. A change in measurement values relative to the number of measurements is determined from the measurement values at a plurality of measurement points on the sample, and the sample-surface electric field is controlled so that the inclination of the change becomes equal to zero, or becomes close to zero.

Abstract: The present invention provides a scanning charged particle beam device including a sample chamber (8) and a detector. The detector has: a function of detecting light at least ranging from the vacuum ultraviolet region to the visible light region, of light (17) having image information which is obtained by a light emission phenomenon of gas scintillation when the sample chamber is controlled to a low vacuum (1 Pa to 3,000 Pa); and a function of detecting ion currents (11, 13) having image information which are obtained by cascade amplification of electrons and gas molecules. Accordingly, it becomes possible to realize a device which can deal with observation of various samples. Further, an optimal configuration of the detection unit is devised, to thereby make it possible to add value to an obtained image and provide users in wide-ranging fields with the observation image.

Abstract: The invention relates to a method for correcting distortions introduced by the projection system (106) of a TEM. As known to the person skilled in the art distortions may limit the resolution of a TEM, especially when making a 3D reconstruction of a feature using tomography. Also when using strain analysis in a TEM the distortions may limit the detection of strain. To this end the invention discloses a detector equipped with multipoles (152), the multipoles warping the image of the TEM in such a way that distortions introduced by the projection system are counteracted. The detector may further include a CCD or a fluorescent screen (151) for detecting the electrons.

Abstract: The present invention relates to methods and systems for 4D ultrafast electron microscopy (UEM)—in situ imaging with ultrafast time resolution in TEM. Single electron imaging is used as a component of the 4D UEM technique to provide high spatial and temporal resolution unavailable using conventional techniques. Other embodiments of the present invention relate to methods and systems for convergent beam UEM, focusing the electron beams onto the specimen to measure structural characteristics in three dimensions as a function of time. Additionally, embodiments provide not only 4D imaging of specimens, but characterization of electron energy, performing time resolved electron energy loss spectroscopy (EELS).

Abstract: A method of obtaining PINEM images includes providing femtosecond optical pulse, generating electron pulses, and directing the electron pulses towards a sample. The method also includes overlapping the femtosecond optical pulses and the electron pulses spatially and temporally at the sample and transferring energy from the femtosecond optical pulses to the electron pulses. The method further includes detecting electron pulses having an energy greater than a zero loss value, providing imaging in space and time.

Abstract: A charged particle beam apparatus of the present invention comprises a transmission electron detector (113; 206) having a detection portion divided into multiple regions (201 to 205; 301 to 305), wherein a film thickness of a sample is calculated by detecting a transmission electron beam (112) generated from the sample when the sample is irradiated with an electron beam (109), as a signal of each of the regions in accordance with scattering angles of the transmission electron beam, and thereafter calculating the intensities of the individual signals. According to the above, there is provided a charged particle beam apparatus capable of performing accurate film thickness monitoring while suppressing an error due to an external condition and also capable of processing a thin film sample into a sample having an accurate film thickness, which makes it possible to improve the accuracy in structure observations, element analyses and the like.

Abstract: A system and method for using electron beams with engineered phase dislocations as scanned probes in electron probe beam instruments such as scanning transmission electron microscopes. These types of electron beams have unique properties and can provide better information about a specimen than conventional electron beams. Phase dislocations may be created based on a pattern disposed on a nanoscale hologram, which may be placed in the electron optical column of the electron probe beam instrument. When an electron beam from the instrument is directed onto the hologram, phase dislocations may be imprinted onto the electron beam when electrons are diffracted from these holograms. For example, electron probe beams with spiral phase dislocations may occur. These spiral phase dislocations are formed using a hologram with a fork-patterned grating. Spiral phase dislocations may be used to provide magnetic contrast images of a specimen.

Abstract: It is an object of the present invention to provide an electron microscope for properly applying a retarding voltage to a sample which is brought into electrical conduction.

Abstract: Multiple detectors arranged in a ring within a specimen chamber provide a large solid angle of collection. The detectors preferably include a shutter and a cold shield that reduce ice formation on the detector. By providing detectors surrounding the sample, a large solid angle is provided for improved detection and x-rays are detected regardless of the direction of sample tilt.

Abstract: A method of forming a sample from a capillary with high-pressure frozen sample material comprises providing a high-pressure capillary with vitrified sample material at a temperature T1 below the glass transition temperature Tg, cutting the capillary, warming the capillary to a temperature T2 between temperature T1 and temperature Tg, cooling the capillary to a temperature T3 below temperature T2, as a result of which material is extruded from the capillary, and freeing a sample from the extruded sample material at a temperature below temperature Tg. Repeating this temperature cycle results in further extrusion of the sample material. The extruded material can then be sliced by, for example, ion beam milling.

Abstract: The invention relates to a method of performing tomographic imaging involving repeatedly directing a charged particle beam through a sample for a series of sample tilts to acquire a corresponding set of images and mathematically combining the images to construct a composite image. The latter of which consists of, at each of a second series of sample tilts, using a spectral detector to accrue a spectral map of said sample, thus acquiring a collection of spectral maps; analyzing said spectral maps to derive compositional data of the sample; and employing said compositional data in constructing said composite image.

Abstract: Method and apparatus are provided for generating an enhanced image of an object. The method includes obtaining images of an area of an object generated using a probe of having a probe size greater than or equal to a minimum probe area size. An enhanced image of the area of the object is generated by accurately computing the emission intensities emitted from pixel areas smaller than the minimum probe size and within the area of the object. This is repeated for other areas of the object to form other enhanced images. The enhanced images are combined to form an accurate enhanced image of the object.

Abstract: The invention relates to a method of forming an image of a sample in a transmission electron microscope equipped with a phase plate. Prior art use of such a phase plate can introduce artifacts in the form of ringing and a halo. These artifacts are caused by the abrupt changes in the Fourier domain due to the sharp edges of the phase plate in the diffraction plane. By moving the phase plate with respect to the non-diffraction beam (the diffraction pattern) while recording an image the sudden transition in the Fourier domain is changed to a more gradual transition, resulting in less artifacts.

Abstract: An electron microscope is offered which facilitates aberration correction even during high-magnification imaging. The microscope has a spherical aberration corrector, a transfer lens system mounted between the corrector and an objective lens, an aperture stop mounted in a stage preceding the corrector so as to be movable relative to the optical axis, and an angular aperture stop mounted at or near the principal plane of the transfer lens system movably relative to the optical axis to adjust the angular aperture of the electron beam.

Abstract: The present disclosure provides an electron beam column with substantially improved resolution and/or throughput for inspecting manufactured substrates. The electron beam column comprises an electron gun, a scanner, an objective lens, and a detector. In accordance with one embodiment, the electron gun includes a gun lens having a flip-up pole piece configuration. In accordance with another embodiment, the scanner comprises a dual scanner having a pre-scanner and a main scanner, and the detector may be configured between the electron gun and the pre-scanner. In accordance with another embodiment, the electron beam column includes a continuously-variable aperture configured to select a beam current. Other embodiments relate to methods of using an electron beam column for automated inspection of manufactured substrates. In one embodiment, for example, an aperture size is adjusted to achieve a minimum spot size given a selected beam current and a column-condition domain being used.

Abstract: A scanning transmission electron microscope for imaging a specimen includes an electron beam source to generate an electron beam. Beam optics are provided to converge the electron beam. A stage is provided to hold a specimen in the path of the electron beam. A beam scanner scans the electron beam across the specimen. A controller may define one or more scanning areas corresponding to locations of the specimen, and control one or more of the beam scanner and stage to selectively scan the electron beam in the scanning areas. A detector is provided to detect electrons transmitted through the specimen to generate an image. The controller may generate a sub-image for each of the scanning areas, and stitch together the sub-images for the scanning areas to generate a stitched-together image. The controller may also analyze the stitched-together image to determine information regarding the specimen.