Abstract: An ultra-miniaturized electron optical microcolumn is provided. The electron optical microcolumn includes an electron-emitting source emitting electrons using a field emission principle, an extraction electrode causing the emission of electrons from the electron-emitting source, a focusing electrode to which voltage is flexibly applied in response to a working distance to a target for regulating a focusing force of electron beams emitted from the electron-emitting source, an acceleration electrode accelerating electrons emitted by the extraction electrode, a limit electrode regulating an amount and a size of electron beams using electrons accelerated by the acceleration electrode, and a deflector deflecting electron beams towards the target.

Abstract: A method for the microscopy of samples using optical microscopy and particle beam microscopy provides that the samples are divided into a partial quantity and a residual quantity and the samples of the partial quantity are prepared to contain registration marks. The samples of the partial quantity are imaged using optical microscopy and particle beam microscopy, with the result that a pair of optical microscopy images and particle beam microscopy images is obtained for each sample of the partial quantity. The pairs are position-registered relative to each other using the registration marks. The images of the position-registered pairs are modified by removing the registration marks. A registration algorithm is trained which evaluates the image contents and issues a quality measure for a position registration of each pair. The objects of the residual quantity are imaged. These pairs are position-registered by the trained registration algorithm to maximize the quality measure.

Abstract: A method for TEM/STEM sample preparation and analysis that can be used in a FIB-electron microscope system without a flip stage. The method allows a dual beam FIB electron microscope system with a typical tilt stage having a maximum tilt of approximately 60° to be used to extract a TEM/STEM sample to from a substrate, mount the sample onto a sample holder, thin the sample using FIB milling, and rotate the sample so that the sample face is perpendicular to a vertical electron beam column for TEM/STEM imaging.

Abstract: A cellular-type PD unit is proposed and a plurality of the cellular-type PD units is used in pairs in a multi-axis magnetic lens for focusing a plurality of charged beams. First type PD units or second type PD units (called as hybrid PD unit as well) can be applied to cellular-type PD units to flexibly construct sub-lenses. Furthermore, magnetic shielding plates with a plurality of through openings can be placed above and/or below the multi-axis magnetic lens to make magnetic flux leaking out of the multi-axis magnetic lens vanish away rapidly outside the magnetic shielding plates.

Abstract: A sample holding apparatus for electron microscope includes: a sample holding assembly including an assembly of three components of an upper diaphragm holding part, a sample holding plate and a lower diaphragm holding part; and a holding part that holds the sample holding assembly replaceably. The sample holding assembly includes a cell defined between a diaphragm of the upper diaphragm holding part and a diaphragm of the lower diaphragm holding part, and a flow channel connected to the cell, in which a sample mounted at a protrusion of the sample holding plate is placed. The diaphragm of the upper diaphragm holding part, the sample and the diaphragm of the lower diaphragm holding part are disposed along an optical axis of an electron beam.

Abstract: The invention relates to a method of forming an image of a sample in a transmission electron microscope equipped with a phase plate. Prior art use of such a phase plate can introduce artifacts in the form of ringing and a halo. These artifacts are caused by the abrupt changes in the Fourier domain due to the sharp edges of the phase plate in the diffraction plane. By moving the phase plate with respect to the non-diffraction beam (the diffraction pattern) while recording an image the sudden transition in the Fourier domain is changed to a more gradual transition, resulting in less artifacts.

Abstract: A method of processing a TEM-sample, wherein the method comprises: mounting an object in a particle beam system such that the object is disposed, in an object region of the particle beam system; directing of a first particle beam onto the object region from a first direction, wherein the first particle beam is an ion beam; and then rotating the object about an axis by 180°, wherein the following relation is fulfilled: 35°???55°, wherein ? denotes a first angle between the first direction and the axis; and then directing of the first particle beam onto the object region from the first direction; wherein material is removed from the object during the directing of the first particle beam onto the object region. Furthermore, a second particle beam may be directed onto the object region, and particles emanating from the object region can be detected.

Abstract: Electron beam phase gratings have phase profiles that produce a diffracted beam having a Gaussian or other selected intensity profile. Phase profiles can also be selected to correct or compensate electron lens aberrations. Typically, a low diffraction order produces a suitable phase profile, and other orders are discarded.

Abstract: The invention relates to a charged-particle apparatus having a charged particle source with an optical axis; a magnetic immersion lens comprising a first lens pole and a configurable magnetic circuit; and a first sample stage movable with respect to the optical axis. The apparatus has a first configuration to position the sample, mounted on the first stage, with respect to the optical axis and a second configuration, having a second lens pole mounted on the first stage and intersecting the optical axis, equipped with a second sample stage to position the sample between the two lens poles and is movable with respect to the optical axis, causing the optical properties of the magnetic immersion lens to differ in the two configurations, and can, in the second configuration, be changed by positioning the second lens pole using the first stage, thus changing the magnetic circuit.

Abstract: A method of fabricating a phase plate, for use in a transmission electron microscope, with simple process steps is offered. The method includes a step (S100) of forming a first layer on a substrate, a step (S102) of patterning the first layer to form through-holes extending through the first layer, a step (S104) of etching the surface of the substrate opposite to the surface on which the first layer is formed to form an opening which is in communication with the through-holes and which exposes the first layer, and a step (S106) of forming a second layer on the first layer.

Abstract: A method and apparatus is provided for preparing samples for observation in a charged particle beam system in a manner that reduces or prevents artifacts. Material is deposited onto the sample using charged particle beam deposition just before or during the final milling, which results in an artifact-free surface. Embodiments are useful for preparing cross sections for SEM observation of samples having layers of materials of different hardnesses. Embodiments are useful for preparation of thin TEM samples.

Abstract: The present invention relates to a carrier device for transporting one or more manipulators into a vacuum specimen chamber of an electron microscope, characterized in that the carrier device comprises: (i) a platform having securing means for detachably securing the one or more manipulators to the platform, and (ii) electrical connectors secured to the platform for the electrical connection of the one or more manipulators. The present invention also relates to a method for transporting the carrier device into the vacuum specimen chamber of the electron microscope without altering the vacuum of the vacuum specimen chamber comprising transporting the carrier device of the invention through the specimen exchange chamber of the electron microscope and into the vacuum specimen chamber.

Abstract: In recent years, in association with the miniaturization and high integration of semiconductor manufacturing processes, there have been arising many cases where observation target portions are densely located. In such a case, if observation is performed using a conventional pre-charge technology, scanning with an electron beam in pre-charging are repeatedly executed, therefore the charge potential on the surface of a specimen exceeds the dielectric breakdown voltage. As a result, dielectric breakdown arises in areas where scanning with an electron beam are repeatedly executed. An object of the present invention is to provide a defect observation method that can reduce the risk of dielectric breakdown, and a charged particle beam apparatus that utilizes the method. In the present invention, when a specimen is observed with the use of a technology relevant to pre-charging, after executing a piece of control processing, plural images are photographed.

Abstract: A method is provided for imaging a region of interest. The method includes defining a lamella within a microelectronic device, where the region of interest is in the lamella. The lamella has a first and second surface, and a first sacrificial layer contacts the first surface. The region of interest includes a material of interest, and an imaging technique capable of detecting the material of interest is selected. A support layer is formed on the second surface, where the support layer is transparent to the imaging technique. The first sacrificial layer is removed, and an image of the region of interest is produced.

Abstract: A method of processing of an object comprises scanning a particle beam across a surface of the object and detecting electrons emerging from the object due to the scanning; determining a height difference between the surface of the object and a predetermined surface for each of plural of locations on the surface of the object based on the detected electrons; determining a processing intensity for each of the plural locations on the surface of the object based on the determined height differences; and directing a particle beam to the plural locations based on the determined processing intensities, in order to remove material from or deposit material on the object at the plural locations.

Abstract: A scanning electron microscope includes a main scanning electron microscope unit having an electron optical column and a sample chamber, a controller over the main scanning electron microscope unit, a single housing that houses both the main scanning electron microscope unit and the controller, and a bottom plate disposed under the single housing, the main scanning electron microscope unit and the controller. A first leg member is attached to a bottom face of the bottom plate on a side of the controller with a first opening hole provided through the bottom plate on a side of the main scanning electron microscope unit, and a damper is fixed to a bottom face of the main scanning electron microscope unit and disposed through the first opening hole.

Abstract: A pattern measurement device includes: a storage section storing mask edge data of a circuit pattern and image data obtained by imaging the circuit pattern; an SEM contour extracting section receiving the image data, SEM contour of the circuit pattern, and cause an exposure simulator to generate estimated SEM contour data of an estimated SEM contour on the basis of the mask edge data and SEM contour data of the extracted SEM contour; a shape classifying section receiving the mask edge data, the SEM contour data, and the estimated contour data to classify the SEM contour data and the estimated SEM contour data into a one-dimensionally shaped contour and a two-dimensionally shaped contour; and an SEM contour sampling section receiving the SEM contour data and the estimated SEM contour data to sample the SEM contour data on the basis of types of the one-dimensionally and two-dimensionally shaped contours.

Abstract: Provided is a phase plate for use in an electron microscope which lessens the problem of image information loss caused by interruption of an electron beam and ameliorates the problem of anisotropic potential distributions. This phase plate comprises openings (23) connected into a single opening, and multiple electrodes (11) arranged in the opening from the outer portion of the opening towards the center of the opening. The cross sections of the electrodes (11) are configured such that a voltage application layer (24) comprising a conductor or a semiconductor is covered by a shield layer comprising a conductor or a semiconductor with an intermediate insulating layer. By this means, this phase plate is capable of lessening electron beam interruption due to the electrodes (11), and of ameliorating the problem of anisotropic potential distributions.

Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.

Abstract: An improved method of preparing ultra-thin TEM samples that combines backside thinning with an additional cleaning step to remove surface defects on the FIB-facing substrate surface. This additional step results in the creation of a cleaned, uniform “hardmask” that controls the ultimate results of the sample thinning, and allows for reliable and robust preparation of samples having thicknesses down to the 10 nm range.

Abstract: An inspecting apparatus for reducing a time loss associated with a work for changing a detector is characterized by comprising a plurality of detectors 11, 12for receiving an electron beam emitted from a sample W to capture image data representative of the sample W, and a switching mechanism M for causing the electron beam to be incident on one of the plurality of detectors 11, 12, where the plurality of detectors 11, 12 are disposed in the same chamber MC. The plurality of detectors 11, 12 can be an arbitrary combination of a detector comprising an electron sensor for converting an electron beam into an electric signal with a detector comprising an optical sensor for converting an electron beam into light and converting the light into an electric signal. The switching mechanism M may be a mechanical moving mechanism or an electron beam deflector.

Abstract: An aberration correction device includes, between a TEM objective lens and an STEM objective lens, a transfer lens group for transferring a coma-free surface of the TEM objective lens to a multipolar lens, a transfer lens group for transferring the coma-free surface of the TEM objective lens to a multipolar lens, and a transfer lens for correcting fifth-order spherical aberration of the STEM objective lens.

Abstract: The present invention provides an on-chip thin film phase plate for a releasing charging, comprising a chip substrate having one or more apertures; and a thin film layer attached to the top surface of the chip substrate. The present invention also provides a method for observing organic material by TEM, which uses the above-mentioned on-chip thin film phase plate in a TEM system.

Abstract: The chromatic aberration corrector (100) has a first multipole element (110) for producing a first electromagnetic field and a second multipole element (120) for producing a second electromagnetic field. The first multipole element (110) first, second, and third portions (110a, 110b, 110c) arranged along an optical axis (OA) having a thickness and producing a quadrupole field in which an electric quadrupole field and a magnetic quadrupole field are superimposed. In the first and third portions (110a, 110c), the electric quadrupole field is set stronger than the magnetic quadrupole field. In the second portion (110b), the magnetic quadrupole field is set stronger than the electric quadrupole field. The second portion (110b) produces a two-fold astigmatism component that is opposite in sign to two-fold astigmatism components produced by the first portion (110a) and third portion (110c).

Abstract: In an interference electron microscope, a first electron biprism is disposed between an acceleration tube and an illumination-lens system, a mask is disposed between the acceleration tube and the first electron biprism, and the first electron biprism is arranged in a shadow that the mask forms. Current densities of first and second electron beams on a parabolic surface of an objective lens system where a sample is positioned are controlled by a control system by an optical action of the illumination-lens system, the mask is imaged on the parabolic surface of the objective lens system, and an electro-optical length between the first electron biprism and the parabolic surface of the objective lens where the sample is positioned is controlled without generating Fresnel fringes on a sample surface from the mask and the first electron biprism.

Abstract: A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply.

Abstract: New methods for phase contrast imaging in transmission electron microscopy use the imaging electron beam itself to prepare a hole-free thin film for use as an effective phase plate, in some cases eliminating the need for ex-situ fabrication of a hole and reducing requirements for the precision of the ZPP hardware. The electron optical properties of the ZPP hardware are modified primarily in two ways: by boring a hole using the electron beam; and/or by modifying the electro-optical properties by charging induced by the primary beam. Furthermore a method where the sample is focused by a lens downstream from the ZPP hardware is disclosed. A method for transferring a back focal plane of the objective lens to a selected area aperture plane and any plane conjugated with the back focal plane of the objective lens is also provided.

Abstract: Provided is means which enables observation of the shape of a specimen as it is without deforming the specimen. Observation is made by allowing a specimen-holding member having an opening (for example, microgrid and mesh) to hold an ionic liquid and charging a specimen thereto, to allow the specimen to suspend in the ionic liquid. Furthermore, in the proximity of the specimen-holding member, a mechanism of injecting an ionic liquid (ionic liquid introduction mechanism) and/or an electrode are provided. When a voltage is applied to the electrode, the specimen moves or deforms in the ionic liquid. How the specimen moves or deforms can be observed. Furthermore, in the proximity of specimen-holding member, an evaporation apparatus is provided to enable charge of the specimen into the ionic liquid while evaporating. Furthermore, in the proximity of the specimen-holding member, a microcapillary is provided to charge a liquid-state specimen into the ionic liquid.

Abstract: The Foucault mode which is one method in Lorentz electron microscopy is required making a plurality of observations such as when reselecting the deflection components of the electron beam to form an image. This method not only required making plurality of adjustments to the optical system but was also incapable of making dynamic observations and real-time observations at different timings even if information on the entire irradiation region was obtained. The present invention irradiates a single electron beam onto the sample, and by utilizing an electron biprism placed such as on an angular space on the electron optics, applies a deflection in the travel direction of each electron beam, and forms the sample image by individually and simultaneously forming images from each of electron beams at different positions on the image surface of the electron optical system.

Abstract: An interface, a scanning electron microscope and a method for observing an object that is positioned in a non-vacuum environment. The method includes: passing at least one electron beam that is generated in a vacuum environment through at least one aperture out of an aperture array and through at least one ultra thin membrane that seals the at least one aperture; wherein the at least one electron beam is directed towards the object; wherein the at least one ultra thin membrane withstands a pressure difference between the vacuum environment and the non-vacuum environment; and detecting particles generated in response to an interaction between the at least one electron beam and the object.

Abstract: A phase plate, specifically a Zernike type phase plate, for use in an electron microscope comprises a central hole, and a thin film causing a phase shift of the electrons passing through said film. This phase shift causes the Contrast Transfer Function (CTF) to change from a sine-like function to a cosine-like function. The phase plate is equipped with a film in the form of an annulus, carried by a much thinner film. As a result only in a small spatial frequency range (for low frequencies) the phase is changed (and thus the CTF), and for other spatial frequencies the phase shift is negligible, and thus the CTF remains unchanged. Due to the much smaller thickness of the carrier film the scattering of electrons is negligible as well.

Abstract: A transmission electron microscope (TEM) includes an electron beam source (2), an illumination lens (4), a first objective lens (6), a second objective lens (8), a selected area aperture (16), a projector lens (10), a detector (12), and a control portion (22). A first plane (17) is located between the second objective lens (8) and the projector lens (10). The control portion (22) performs first sets of processing for controlling the illumination lens (4) such that an electron beam (L) hits the sample (S), controlling the second objective lens (8) such that a diffraction pattern of the sample (S) is imaged onto the first plane (17), and controlling the projector lens (10) such that a TEM image of the sample (S) formed by the second objective lens (8) is focused onto a second plane where the light-sensitive portion (13) of the detector (12) is disposed.

Abstract: An electron beam device includes a first electron biprism between an acceleration tube and irradiation lens systems, and an electron biprism in the image forming lens system. The first electron biprism splits the electron beam into first and second electron beams, radiated to differently positioned first and second regions on an objective plane of an objective lens system having a specimen perpendicular to an optical axis. The first and second electron beams are superposed on the observation plane by the electron biprism of the image forming lens system. The superposed region is observed or recorded. Optical action of the irradiation lens system controls each current density of the first and second electron beams on the objective plane having the specimen, and distance on electron optics between the first electron biprism and the objective plane of the objective lens system having the specimen.

Abstract: A method of fabricating a phase plate, for use in a transmission electron microscope, with simple process steps is offered. The method includes a step (S100) of forming a first layer on a substrate, a step (S102) of patterning the first layer to form through-holes extending through the first layer, a step (S104) of etching the surface of the substrate opposite to the surface on which the first layer is formed to form an opening which is in communication with the through-holes and which exposes the first layer, and a step (S106) of forming a second layer on the first layer.

Abstract: The astigmatism control processing time is decreased to 1 second or less by improving the astigmatic difference measurement accuracy. A charged particle beam device includes: a stage on which a sample is loaded; a transport mechanism which carries the sample onto the stage; a charged particle beam optical system which irradiates the sample on the stage with a charged particle beam and detects secondary charged particles generated from the sample; and a controller which determines setup parameters for the charged particle beam optical system and controls the charged particle beam optical system. The controller registers and holds electro-optical system setup parameters for irradiation with a beam tilted from a normal line on the sample as the charged particle beam, compares observation images obtained by the tilted beam, measures the amount and direction of movement and calculates the amount of astigmatism correction from the amount of movement and the direction.

Abstract: An optical system includes a beam splitter disposed along an optical axis and a set of mirrors optically coupled to the beam splitter. The set of mirrors are oriented perpendicular to each other. The optical system also includes a turning mirror optically coupled to a second mirror of the set of mirrors and a detector optically coupled to the turning mirror.

Abstract: A scintillator 21 is disposed on an incidence side 23a of a photomultiplier 23. A scintillator cap 22 for introducing electrons into the scintillator 21 is disposed around the scintillator 21. The photomultiplier 23 is disposed in a sample chamber 17 with a vacuum seal formed around the photomultiplier 23. An insulating member 25 made of an opaque material is disposed between the scintillator cap 22 and the photomultiplier 23. The insulating member 25 provides insulation between the scintillator cap 22 and the photomultiplier 23. The lateral circumference of the photomultiplier 23 is covered to prevent light from entering the photomultiplier 23. A band filter 27 for blocking the illumination light of an optical microscope 30 is disposed between the scintillator 21 and the incidence side 23a of the photomultiplier 23 to make it possible to conduct simultaneous observations by using the electrons and the optical microscope.

Abstract: An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.

Abstract: The charged particle beam device has an unlimitedly rotatable sample stage and an electric field control electrode for correcting electric field distortion at a sample peripheral part. A voltage is applied to a sample on the unlimitedly rotatable sample stage through a retarding electrode that is in contact with a holder receiver at a rotation center of a rotary stage. An equipotential plane on the electric field control electrode is varied by applying a voltage to the electric field control electrode, and following this the equipotential plane at a sample edge is corrected, which enables the sample to be observed as far as its edge.

Abstract: With a scanning electron microscope (SEM) adopting a commonly available exhaust system such as a turbo-molecular pump, an ion pump, or a rotary pump, and so forth, there is realized an apparatus capable of safely executing observation, or adsorption of a target substance that is high in rarity. Further, there is realized a safe SEM low in the risk of an electrical discharge by providing the apparatus with a probe, a means for replacing an atmosphere in a specimen chamber, with a predetermined gas, and a means for forming an image by detection of an ion current, and detection of an absorption current. Further, there is provided a means for controlling the polarity of a voltage applied to the probe. Still further, there is provided a control means for controlling a value of the voltage applied to the probe according to a degree of vacuum.

Abstract: The invention relates to a method of preparing and imaging a sample using a particle-optical apparatus, equipped with an electron column and an ion beam column, a camera system, a manipulator. The method comprises the steps of deriving a first ptychographic image of the sample from a first electron image, thinning the sample, and forming a second ptychographic image of the sample. In an embodiment of the invention the seed image used for the second image is the first ptychographic image. In another embodiment the second ptychographic image is the image of the layer removed during the thinning. In another embodiment the inner potential of the sample is determined and dopant concentrations are determined.

Abstract: A method of measuring a step height of a device using a scanning electron microscope (SEM), the method may include providing a device which comprises a first region and a second region, wherein a step is formed between the first region and the second region, obtaining a SEM image of the device by photographing the device using a SEM, wherein the SEM image comprises a first SEM image region for the first region and a second SEM image region for the second region, converting the SEM image into a gray-level histogram and calculating a first peak value related to the first SEM image region and a second peak value related to the second SEM image region, wherein the first peak value and the second peak value are repeatedly calculated by varying a focal length of the SEM, and determining a height of the step by analyzing a trend of changes in the first peak value according to changes in the focal length and a trend of changes in the second peak value according to the changes in the focal length.

Abstract: A method of inspecting for plug-to-plug short (short circuit) defects on a sample is disclosed. A charged particle beam for imaging the sample is repeatedly line-scanned over the sample with a line-to-line advancement direction perpendicular to the line-scan direction. The method includes scanning the sample with a line-to-line advancement along a first and a second direction, to obtain a first and a second image of the sample, respectively. Then, the method includes identifying plug patterns, represented in the obtained images with abnormal grey levels, as abnormal plug patterns. Next, the method compares the locations of the abnormal plug patterns to determine the presence of plug-to-plug short defects on the sample.

Abstract: According to a charged corpuscular particle beam irradiating method of this invention, a focusing element (19) which focuses the trajectories of charged corpuscular particles (12) emitted from a specimen (10) is arranged at a position which prevents focusing action by the focusing element (19) from affecting a charged corpuscular particle beam (4) traveling toward the specimen or can curb effects of the focusing action on the charged corpuscular particle beam (4). With this configuration, the focusing action selectively affects the charged corpuscular particles (12) emitted from the specimen (10), and effects of the focusing action on the charged corpuscular particle beam (4) traveling toward the specimen (10) are curbed.

Abstract: A method for processing a sample in a charged-particle beam microscope. A sample is collected from a substrate and the sample is attached to the tip of a nanomanipulator. The sample is optionally oriented to optimize further processing. The nanomanipulator tip is brought into contact with a stabilizing support to minimize drift or vibration of the sample. The attached sample is then stabilized and available for preparation and analysis.

Abstract: The present invention provides an on-chip thin film phase plate for a releasing charging, comprising a chip substrate having one or more apertures; and a thin film layer attached to the top surface of the chip substrate. The present invention also provides a method for observing organic material by TEM, which uses the above-mentioned on-chip thin film phase plate in a TEM system.

Abstract: The present invention discloses a structure and a method for determining a defect in integrated circuit manufacturing process. Test keys are designed for the structure to be the interlaced arrays of grounded and floating conductive cylinders, and the microscopic image can be predicted to be an interlaced pattern of bright voltage contrast (BVC) and dark voltage contrast (DVC) signals for a charged particle beam imaging system. The system can detect the defects by comparing patterns of the detected VC signals and the predicted VC signals.

Abstract: The present invention relates to methods and systems for 4D ultrafast electron microscopy (UEM)—in situ imaging with ultrafast time resolution in TEM. Single electron imaging is used as a component of the 4D UEM technique to provide high spatial and temporal resolution unavailable using conventional techniques. Other embodiments of the present invention relate to methods and systems for convergent beam UEM, focusing the electron beams onto the specimen to measure structural characteristics in three dimensions as a function of time. Additionally, embodiments provide not only 4D imaging of specimens, but characterization of electron energy, performing time resolved electron energy loss spectroscopy (EELS).

Abstract: In accordance with an embodiment, a sample analyzing apparatus includes a charged beam generating unit, a detecting unit, and an analyzing unit. The charged beam generating unit is configured to generate a charged beam and apply the charged beam to a sample. The detecting unit is configured to detect charged particles and then output a signal, the charged particles being generated from the sample by the application of the charged beam in a manner depending on a three-dimensional structure and material characteristics of the sample. The analyzing unit is configured to process the signal to analyze the sample.

Abstract: A transmission electron microscopy system has an illumination system and an objective lens system. A first projection system images the diffraction plane of the objective lens system into a first intermediate diffraction plane. A second projection system images the first intermediate diffraction plane into a second intermediate diffraction plane. A first aperture located in the first intermediate diffraction plane has a central opening of a first radius. A bright field detector located in the second intermediate diffraction plane has a detection surface defined by an inner edge of a second radius. The first radius and the second radius define a maximum angle and a minimum angle, respectively, relative to the optical axis of directions of bright field electrons traversing the sample plane and detectable by the bright field detector.