Abstract: Disclosed herein are methods, systems, and devices for correcting out-of-band interference for sensors monitoring cumulative exposure to radiation. In one embodiment, a device includes a processor and a memory electrically coupled with the processor. The device further includes first optical-to-electrical conversion circuitry electrically coupled with the processor and configured to detect radiation associated with a first wavelength, and second optical-to-electrical conversion circuitry electrically coupled with the processor and configured to detect radiation associated with a second wavelength. For example, the first wavelength may be associated with a first wavelength of a first wavelength detection range associated with the first optical-to-electrical conversion circuitry and the second wavelength may be associated with a second wavelength of a second wavelength detection range associated with the second optical-to-electrical conversion circuitry.

Abstract: A light receiving element and a ranging system is provided which achieve improvement of pixel characteristics while allowing variation in a breakdown voltage of an SPAD. The light receiving element includes a pixel array in which a plurality of pixels is arranged in a matrix, and a pixel driving unit configured to control respective pixels of the pixel array to be active pixels or non-active pixels. The pixel includes an SPAD, a transistor connected to the SPAD in series, an inverter configured to output a detection signal indicating incidence of a photon on the SPAD, a first transistor which is switched on or off in accordance with control of the pixels to be the active pixels or the non-active pixels, and a second transistor connected to the first transistor in series.

Abstract: An apparatus and method for providing a filtering false photon count events for each pixel in a DTOF sensor array are disclosed herein. In some embodiments, the apparatus includes: a light source configured to emit a modulated signal towards the object; a direct time of flight (DTOF) sensor array configured to receive a reflected signal from the object, wherein the DTOF sensor array comprises a plurality of single-photon avalanche diodes (SPADs); and processing circuitry configured to receive photon event detection signals from a center pixel and a plurality of pixels orthogonally and diagonally adjacent to the center pixel and output a valid photon detection signal, in response to determining whether a sum of the received photon event detection signals is greater than a predetermined threshold.

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

Abstract: Some embodiments include a sensor unit with a conversion element and a readout substrate. The conversion element has imaging pixels and each imaging pixel is configured to directly convert radiation into an electrical charge. Each imaging pixel has a charge collection electrode. The imaging pixels have first imaging pixels and second imaging pixels. The readout substrate has a plurality of readout pixels arranged in a grid. Each readout pixel is connected to an associated imaging pixel by means of an interconnection at a connection position on the charge collection electrode. The second imaging pixels are shifted in a shifting direction relative to the first imaging pixels. The connection positions, in relation to the charge collection electrodes, are different between the first imaging pixels and the second imaging pixels.

Abstract: Disclosed herein is a detector, comprising: a plurality of pixels; a first guard ring comprising a plurality of segments, wherein the detector is configured to detect charge carriers collected by the segments; a controller configured to detect charge sharing between at least one pixel of the plurality of pixels and at least one segment of the first guard ring.

Abstract: Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). Positioning SPADs close together in an imaging device (such as a silicon photomultiplier) may have benefits such as improved sensitivity. However, as the SPADs get closer together, the SPADS may become susceptible to crosstalk. Crosstalk is typically undesirable due to reduced dynamic range and reduced signal accuracy. To reduce crosstalk, a capacitor or other component may be coupled between adjacent SPADs. When an avalanche occurs on a given SPAD, the bias voltage may drop below the breakdown voltage. The capacitor may cause a corresponding voltage drop on a neighboring SPAD. The voltage drop on the neighboring SPAD reduces the over-bias of that SPAD, reducing the sensitivity of the SPAD and therefore mitigating the chance of crosstalk occurring.

Abstract: The luminance of a transmission mode X-ray scintillator diamond plate is dominated by induced defect centers having an excited state lifetime less than 10 msec, and in embodiments less than 1 msec, 100 usec, 10 used, 1 used, 100 nsec, or even 50 nsec, thereby providing enhanced X-ray luminance response and an X-ray flux dynamic range that is linear with X-ray flux on a log-log scale over at least three orders of magnitude. The diamond plate can be a single crystal having a dislocation density of less than 104 per square centimeter, and having surfaces that are ion milled instead of mechanically polished. The defect centers can be SiV centers induced by silicon doping during CVD diamond formation, and/or NV0 centers formed by nitrogen doping followed by applying electron beam irradiation of the diamond plate and annealing.

Abstract: An output compensation circuit of an image sensor includes a first current mirror circuit, a first current generator circuit and a second current generator circuit. The first current mirror circuit, coupled to a select transistor of a pixel circuit of the image sensor, is configured to, in response to a first current, generate a second current flowing through the select transistor. The select transistor is selectively turned on according to a power supply voltage. When the select transistor is turned on, the pixel circuit outputs the second current through the select transistor. The first current generator circuit outputs a compensation current, serving as a first portion of the first current, to the first current mirror circuit in response to a variation in the power supply voltage. The second current generator circuit outputs a reference current, serving as a second portion of the first current, to the first current mirror circuit.

Abstract: An integrated detection, flow cell and photonics (DFP) device is provided that comprises a substrate having an array of pixel elements that sense photons during active periods. The substrate and pixel elements form an IC photon detection layer. At least one wave guide is formed on the IC photo detection layer as a photonics layer. An optical isolation layer is formed over at least a portion of the wave guide. A collection of photo resist (PR) walls patterned to define at least one flow cell channel that is configured to direct fluid along a fluid flow path. The wave guides align to extend along the fluid flow path. The flow cell channel is configured to receive samples at sample sites that align with the array of pixel elements.

Abstract: Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.

Abstract: A sensor circuit having a Single Photon Avalanche Diode (SPAD) and an active quenching circuit including a quenching transistor controlled by a one-shot (or similar) circuit is disclosed. The quenching transistor applies a reverse-bias voltage level on the cathode of the SPAD. During photon detection events, pulses generated by the SPAD's avalanche breakdown trigger the one-shot circuit to de-actuate the quenching transistor, allowing the cathode potential to drop below the SPAD's breakdown voltage. After a delay period, which is defined by the one-shot's configuration, allows reliable completion of the avalanche breakdown process, the one-shot circuit re-actuates the quenching transistor such that the SPAD's cathode is refreshed to the reverse-bias voltage level. The one-shot circuit is optionally coupled by way of capacitors to the SPAD and the quenching transistor to facilitate implementation using standard CMOS elements. The sensor is suitable for use in a LIDAR system.

Abstract: Disclosed herein is a detector, comprising: a plurality of pixels, a plurality of segments of guard ring, and a controller, is configured to count numbers of X-ray photons that incident on each pixel of the plurality, and whose energy falls in a plurality of bins, within a period of time. The controller, is configured to detect charge sharing between pixels and segments of guard ring. With charge sharing detected, the controller is also configured to disregard one single photon. With no charge sharing detected, the controller is configured to add the numbers of X-ray photons that incident on the all pixels, for the bins of the same energy range. The detector may compile all the added numbers as an energy spectrum of the incident X-ray photons thereon.

Abstract: One embodiment provides a method, including: receiving a plurality of responses to an interaction occurring within a photon detector pixel array, wherein the photon detector pixel array comprises a plurality of pixels; identifying a subset of the plurality of pixels associated with the interaction, wherein each of the subset of the plurality of pixels corresponds to at least one of the plurality of responses; determining, from the plurality of responses, a characteristic of the interaction, wherein the characteristic comprises at least one of: time, position, and energy of the interaction; recording the interaction associated with the at least one determined characteristic; collecting a plurality of recorded interactions and associated determined characteristics; selecting a subset of the plurality of recorded interactions, wherein the subset selection is based upon a restricted range of at least one determined characteristic; and forming an image from the selected subset of the plurality of recorded interact

Abstract: Disclosed is a method for management of geometric misalignment in an x-ray imaging system having an x-ray source, a photon-counting x-ray detector and an intermediate collimator structure in the x-ray path between the x-ray source and the x-ray detector. The x-ray detector includes a plurality of pixels, and the collimator structure includes a plurality of collimator cells, wherein each of at least a subset of the collimator cells corresponds to a N×M matrix of pixels, where at least one of N and M is greater than one. The method includes monitoring, for a designated subset of pixels including at least two pixels that are affected differently by shadowing from the collimator structure due to geometric misalignment, output signals from the pixels of the designated subset, and determining the occurrence of geometric misalignment based on the monitored output signals from the pixels of the designated subset of pixels.

Abstract: Illustrative embodiments disclosed herein pertain to a thermal imaging system that includes a thermal imaging sheet having an array of thermal unit cells for generating a thermal footprint in response to receiving an RF signal. The thermal footprint is composed of an array of hotspots having a first set of hotspots indicative of a radiation characteristic of a first polarization component of the RF signal, and a second set of hotspots indicative of a radiation characteristic of a second polarization component of the RF signal. Each thermal unit cell includes a first RF antenna and a second RF antenna oriented orthogonal with respect to each other. The first RF antenna includes a terminating resistor that generates a hotspot among the first set of hotspots and the second RF antenna includes another terminating resistor that generates a hotspot in the second set of hotspots.

Abstract: A control system is described which provides a user interface that displays a clear graphical representation of relevant data for a particle radiation therapy system (such as a pencil-beam proton therapy system) for treating multiple beam fields as efficiently as possible. The user interface allows a user to visualize a treatment session, select one or multiple beam fields to include in one or more beam applications, and dissociate beam fields previously grouped if necessary. Further embodiments extend the ability to initiate the application of the generated proton therapy beam and the grouping of beam fields to be performed remotely from the treatment room itself, and even automatically, reducing the need for manual interventions to setup between fields.

Abstract: A ranging device includes an array of photon detection devices that receive an optical signal reflected by an object in an image scene and first and second logic devices to respectively combine the outputs of first and second pluralities of the photon detection devices. First and second counter circuits are respectively coupled an output of the first and second logic devices and generate first and second count values respectively by counting the photon detection events generated by the first and second pluralities of photon detection devices. A range estimation circuit estimates the range of the object by estimating the timing of one or more pulses of said optical signal based on the first and second count values.

Abstract: Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.

Abstract: A photon detector includes a sensor array of optical sensors disposed in a plane and four substantially identical scintillation crystal bars. Each optical sensor is configured to sense luminescence. Each of the four scintillator crystal bars being a rectangular prism with four side surfaces and first and second end surfaces, each scintillation bar has two side surfaces which each face a side surface of another scintillation bar, and each scintillation crystal bar generating a light scintillation in response to interacting with a received gamma photon. A first layer (80) is disposed in a first plane disposed between and adjacent facing side surfaces of the four substantially identical scintillation crystal bars with a light sharing portion (82) adjacent the first end surface and a reflective portion (84) adjacent the second end surface.

Abstract: Methods and apparatus for updating data for printing devices are provided. A device state management system (DSMS) can send probe messages to printing devices. The DSMS can receive responses to the probe messages, where the number of probe messages can exceed the number of responses. After receiving the responses, a number of unconfirmed printing devices can be determined based on data stored in a device database (DDB) associated with the DSMS. The DSMS can determine a system-instability value associated with the number of unconfirmed printing devices. The DSMS can determine whether the system-instability value exceeds a threshold. After determining that the system-instability value exceeds the threshold, the DSMS can: determine address clusters associated with the unconfirmed printing devices; send probe messages to addresses within at least one address cluster; receive responses to the probe messages; and update the DDB using data in the responses.

Abstract: A back side illuminated image sensor may operate using the single-photon avalanche diode (SPAD) concept in a Geiger mode of operation for single photon detection. The image sensor may be implemented using two layer stacking with a silicon on insulator (SOI) chip. The chip-to-chip electrical connections between the top level image sensing chip and the second level ASIC circuit chip may be realized at each pixel with a single bump connection per pixel. A light level signal may be obtained from pixels that have photon counting capabilities while a distance measurement signal for 3-dimensional imaging may be obtained from pixels that have time-of-flight (ToF) detection capabilities. Both types of pixels may be integrated within the same array and use the same SPAD structure placed on the top chip.

Abstract: A radiation detector that improves accurately a fluorescence emission-time. A limiter circuit instead of a low-pass filter and a high-pass filter removes a noise component of the amplifier output. The limiter circuit blocks passing through the amplification signal when the amplification signal output from the amplifier a is lower than the limit level. Accordingly, a noise component output not related to the fluorescence detection from the amplifier a is blocked by the limiter circuit L and is unable to reach to the addition circuit. When the amplification signal output from the amplifier a is larger than the limit level, the limiter circuit L passes through such amplification signal; so that the signal, which is related to a fluorescence detection, that the amplifier a outputs can be absolutely input into the fluorescence emission-time calculation element.

Abstract: The technique introduced herein decouples the traditional relationship between bandwidth and responsivity, thereby providing a more flexible and wider photodetector design space. In certain embodiments of the technique introduced here, a photodetector device includes a first mirror, a second mirror, and a light absorption region positioned between the first and second reflective mirrors. For example, the first mirror can be a partial mirror, and the second mirror can be a high-reflectivity mirror. The light absorption region is positioned to absorb incident light that is passed through the first mirror and reflected between the first and second mirrors. The first mirror can be configured to exhibit a reflectivity that causes an amount of light energy that escapes from the first mirror, after the light being reflected back by the second mirror, to be zero or near zero.

Abstract: The present invention relates to a detector (22?) for detecting ionizing radiation, comprising: a directly converting semi-conductor layer (36) for producing charge carriers in response to incident ionizing radiation; and a plurality of electrodes (34) corresponding to pixels for registering the charge carriers and generate a signal corresponding to registered charge carriers; wherein an electrode of the plurality of electrodes (34) is structured to two-dimensionally intertwine with at least two adjacent electrodes to register the charge carriers by said electrode and by at least one adjacent electrode. The present invention further relates to a detection method and to an imaging apparatus.

Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

Abstract: In one implementation, a method for operating an apparatus is described. The method includes applying a bias voltage to place a transistor of a reference sensor in a known state. The reference sensor is in an array of sensors that further includes a chemical sensor coupled to a reaction region for receiving at least one reactant. The method further includes acquiring an output signal from the reference sensor in response to the applied bias voltage. The method further includes determining a defect associated with the array if the output signal does not correspond to the known state.

Abstract: A method for determining a radionuclide concentration of a material is provided. The method comprises placing the material to be analyzed into a vessel, wherein the material comprises a radionuclide, wherein the material has a known volume, and wherein the vessel has a fixed geometry. The method further comprises weighing the material to be analyzed and measuring the moisture content of the material to be analyzed. The method additionally comprises placing a protective structure in the material and placing a detector in the protective structure, wherein the detector is coupled to a single-channel analyzer. The method also comprises counting the emitted radiation having a known energy over an interval of time to produce a count per time, wherein the emitted radiation is emitted from the radionuclide and then dividing the count per time by the weight of the material to produce a count per time per weight.

Abstract: A radiation detector processing assembly is provided including at least one application specific integrated circuit (ASIC). The radiation detector processing assembly includes plural input channels, a common readout, and a readout channel. Each input channel is configured to receive an input corresponding to a detection event from a pixel of a pixelated detector. The common readout is operably coupled to the plural input channels, and is configured to receive a corresponding output signal from each input channel. Each corresponding output signal has a unique address identifying the corresponding input channel. The readout channel is configured to receive a corresponding readout output from the common readout. The readout output includes output signals from a corresponding group of input channels.

Abstract: Photomultipliers are disclosed which comprise circuitry for detecting photo electric events and generating short digital pulses in response. In one embodiment, the photomultipliers comprise solid state photomultipliers having an array of microcells. The microcells, in one embodiment, in response to incident photons, generate a digital pulse signal having a duration of about 2 ns or less.

Abstract: A solid-state device for generating a single photon for quantum information processing, the device including: a quantum dot molecule including: a first singly-charged quantum dot; and a second singly-charged quantum dot; wherein the first singly-charged quantum dot is adjacent to the second singly-charged quantum dot; and a tunnel barrier that separates the first singly-charged quantum dot from the second singly-charged quantum dot.

Abstract: A radiation detector system is provided including a semiconductor detector, plural pixelated anodes, and at least one processor. The plural pixelated anodes are disposed on a surface of the detector. At least one of the pixelated anodes is configured to generate a collected charge signal corresponding to a charge collected by the pixelated anode and to generate a non-collected charge signal corresponding to a charge collected by an adjacent anode to the pixelated anode. The at least one processor is configured to determine a collected value for the collected charge signal in the pixelated anode; determine a non-collected value for the non-collected charge signal in the pixelated anode corresponding to the charge collected by the adjacent anode; use the non-collected value for the non-collected charge signal to determine a sub-pixel location for the adjacent anode; and use the collected value to count a single event in the pixelated anode.

Abstract: A solid-state device for generating a single photon for quantum information processing, the device including: a quantum dot molecule including: a first singly-charged quantum dot; and a second singly-charged quantum dot; wherein the first singly-charged quantum dot is adjacent to the second singly-charged quantum dot; and a tunnel barrier that separates the first singly-charged quantum dot from the second singly-charged quantum dot.

Abstract: A radiation detector system is provided including a semiconductor detector, plural pixelated anodes, and at least one processor. At least one of the pixelated anodes is configured to generate a collected charge signal corresponding to charge collected by the pixelated anode and to generate a non-collected charge signal corresponding to charge collected by an adjacent anode. The at least one processor includes a tangible and non-transitory memory having stored thereon instructions configured to direct the at least one processor to determine a collected value for the collected charge signal, to determine a non-collected value for the non-collected charge signal, determine a calibrated value for the non-collected charge signal, determine a total charge produced by a charge sharing event using the collected value and the calibrated value, and count the charge sharing event as a single event if the total charge exceeds a predetermined value.

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

Abstract: A system may determine metadata information associated with data included in a data structure. The system may identify a category, associated with the data, based on the metadata information. The system may present, for display, a user interface that allows a user to build a graphical query based on the category. The graphical query may include a user-defined visual representation of a data structure query associated with the data. The system may receive information associated with the graphical query based on presenting the user interface. The information associated with the graphical query may be received based on input provided via the user interface, and may include information associated with the category. The system may provide the information associated with the graphical query.

Abstract: Terahertz (THz) distributed detectors, and arrays of detectors that utilize structured surface plasmonic effects for more efficient coupling to free space are discussed. One example distributed detector includes a detector junction comprising a Schottky or tunneling interface between a semiconductor and a detector metal, an ohmic junction comprising an ohmic interface between the semiconductor and an ohmic metal, and a gap that separates the detector junction from the ohmic junction. Structured surface plasmons concentrate an electric field in the gap when the distributed detector is exposed to THz radiation polarized perpendicular to the gap.

Abstract: A wiring substrate includes a substrate body, a through hole extending through the substrate body from an upper surface to a lower surface of the substrate body, and a through electrode formed in the through hole. The through electrode includes a conductive layer that forms a cavity in the through hole, and a resin layer that fills the cavity. The conductive layer includes first to third metal layers. The first metal layer is formed on an upper wall surface of the through hole. The second metal layer covers at least a portion of the first metal layer and an upper opening of the through hole. The third metal layer is formed on a lower wall surface of the through hole and connected to at least the first metal layer or the second metal layer.

Abstract: An integrated circuit includes a sensing module, a measuring module, a comparing module, and memory. The sensing module senses radiation incident on the integrated circuit. The measuring module communicates with the sensing module and measures an amount of the radiation incident on the integrated circuit. The comparing module communicates with the measuring module and compares the amount of the radiation to a predetermined threshold and generates an indication that the amount of the radiation is less than the predetermined threshold or that the amount of the radiation is greater than or equal to the predetermined threshold. The memory stores the indication.

Abstract: A diagnostic imaging system and method using multiple types of imaging detectors are provided. The imaging system includes a gantry having a rotor and a stator and a pair of gamma detectors coupled to the rotor. The imaging system further includes a gamma detector coupled to the stator. The gamma detector coupled to the stator is different than the pair of gamma detectors coupled to the rotor.

Abstract: A demodulation sensor (30) is described for detecting and demodulating a modulated radiation field impinging on a substrate (31). The sensor comprises the means (1,7,15) for generating, in the substrate, a static majority current assisted drift (Edrift) field, at least one gate structure (33) for collecting and accumulating minority carriers (21), the minority carriers generated in the substrate by the impinging radiation (28) field. The at least one gate structure comprises at least two regions (4,9,18) for the collection and accumulation of the minority carriers (21) and at least one gate (5,6,8) adapted for inducing a lateral electric drift field under the gate structure, the system thus being adapted for directing the minority carriers (21) towards one of the at least two regions (4,9) under influence of the static majority current assisted drift field and the lateral electric drift field induced by the at least one gate, and a means for reading out the accumulated minority carriers in that region.

Abstract: A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized, FIG. 2.

Abstract: A digital X-ray sensor having a detection layer, and a collection layer formed by pixels in the form of a CMOS ASIC, wherein the sensor is provided with a “photon-counting” function and is suitable for radiological applications, so that the best arrangement is obtained between the image quality and the radiation dose absorbed by a subject.

Abstract: First TFTs are provided in correspondence with respective intersection portions between plural signal lines and plural first scan lines. Control terminals of the first TFTs are connected to the corresponding first scan lines, and output terminals of the first TFTs are connected to the corresponding signal lines. Sensors are connected to input terminals of the first TFTs. Second TFTs include input terminals that are connected to respective sensors and control terminals that are connected to second scan lines. Output terminals of second TFTs whose input terminals are connected to a plural number of the sensors, which sensors are adjacent in a first direction and a second direction, are connected to the same signal line. A plural number of the second scan lines that are provided with driving signals that are identical or the same are electrically connected to one another by a redundant line.

Abstract: Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn).

Abstract: Radiation detectors having nanowires with charged, radiation-labile coatings configured to change the electrical properties of nanowires are provided. In one aspect, a radiation detection device is provided. The radiation detector device includes at least one nanowire having a radiation-labile coating with charged moieties on a surface thereof, wherein the radiation-labile coating is configured to degrade upon exposure to radiation such that the charged moieties are cleaved from the radiation-labile coating upon exposure to radiation and thereby affect a transconductance of the nanowire.

Abstract: This disclosure is directed to devices, integrated circuits, and methods for sensing radiation. In one example, a device includes a radiation sensitive oscillator, configured to deliver a first output signal at intervals defined by a first oscillation frequency that alters in resistance in response to radiation. The device includes a reference oscillator, configured to deliver a reference output signal at a constant reference oscillation frequency. A controller records a first instance of the count from the radiation sensitive oscillator for a duration of time defined by the count from the reference counter; compares a second instance of the count from the radiation sensitive oscillator with the first instance of the count from the radiation sensitive oscillator; and performs a selected action in response to the second instance of the count from the radiation sensitive oscillator varying from the first instance of the count from the radiation sensitive oscillator.

Abstract: A radiation detector comprises a piece of semiconducting material. On its surface, a number of consecutive electrode strips are configured to assume electric potentials of sequentially increasing absolute value. A field plate covers the most of a separation between a pair of adjacent electrode strips and is isolated from the most of said separation by an electric insulation layer. A bias potential is coupled to said field plate so that attracts surface-generated charge carriers.

Abstract: An X-ray detector panel comprises: a substrate; a transistor including a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, an active layer disposed on the gate insulating layer, and a source electrode and a drain electrode disposed on the active layer and separated from each other; a photodiode including a first electrode connected to the drain electrode of the transistor, a photoconductive layer disposed on the first electrode, and a second electrode disposed on the photoconductive layer; an interlayer insulating layer including a first interlayer insulating layer covering the transistor and the photodiode, the first interlayer insulating layer being formed of an insulating material having a band gap energy of about 8 eV to about 10 eV; a data line disposed on the interlayer insulating layer and contacting the source electrode of the transistor via the interlayer insulating layer; a bias line disposed on the interlayer insulating layer and contacting the second