Abstract: The invention relates to a radiation detector (100), particularly for X-rays (X) and for y-rays, which comprises a combination of (a) at least one primary conversion layer (101a-101f) with a low attenuation coefficient for the photons and (b) at least one secondary conversion layer (102) with a high attenuation coefficient for the photons. In preferred embodiments, the primary conversion layer (101a-101f) may be realized by a silicon layer coupled to associated energy-resolving counting electronics (111a-111f, 121). The secondary conversion layer (102) may be realized for example by CZT or GOS coupled to energy-resolving counting electronics or integrating electronics. Using primary conversion layers with low stopping power allows to build a stacked radiation detector (100) for spectral CT in which the counting rates of the layers are limited to feasible values without requiring unrealistic thin layers.

Abstract: In the radiation detector of this invention, the second common electrode is formed on the incidence surface of the seat so as to cover at least a portion of the seat and the second common electrode is connected to the first common electrode. Thus, the second common electrode is bent at the periphery of the semiconductor and the seat, and a bent portion thereof is formed sharp. The first common electrode formed along the incidence surface of the semiconductor is disposed under the sharp portion of the second electrode (i.e., opposite to the incidence surface). Consequently, the common electrode seen from a bottom (opposite to the incidence surface) has a uniform shape, which avoids occurrence of irregular concentration of the electric fields. As a result, dark current due to concentration of the electric fields may be suppressed.

Abstract: A semiconductor substrate is composed of a SiC crystal. A metal film having a desired area and serving as an incident surface onto which X-rays are made incident is formed on one surface of the semiconductor substrate. An electrode having the shape of a circle is formed at the central portion of the other surface of the semiconductor substrate. A ring-shaped electrode is formed in a portion near the circumference of the semiconductor substrate so as to surround the electrode. A predetermined direct voltage is applied to the metal film and the ring-shaped electrode. A voltage of a ground level is applied to the electrode. X-rays (?-rays) that are made incident onto the metal film cause the generation of electron-hole pairs in the semiconductor substrate. The generated electrons are collected at the electrode and drawn as electric signals from an output terminal.

Abstract: A radiation detector comprises a substrate of diamond material and at least one electrode formed at a surface of the substrate. The electrode comprises electrically conductive material deposited in a cavity in the surface of the substrate so that at least a portion of the material of the electrode is below the surface of the substrate. The cavity will typically be an elongate trench or channel in which electrically conductive material such as boron-doped diamond is deposited. In some embodiments, at least two electrodes are located adjacent to one another at the surface of the substrate. In other embodiments, the device has a plurality of electrodes, at least one of which is located at a first surface and at least one of which is located at an opposed second surface of the substrate.

Abstract: An apparatus includes an x-ray source (112) that generates transmission radiation that traverses an examination region (108) and a detector (116) that includes a photo-converter (204) that detects the radiation and generates a signal indicative thereof. The photo-converter (204) includes a light receiving region (260) on a back side (264). The light receiving region receives light indicative of the detected radiation. The photo-converter (204) further includes read-out electronics (240) within a front side (228), which is located opposite the back side (264). The read-out electronics (240) process a photo-current indicative of the received light to generate the signal indicative of the detected radiation. The photo-converter (204) further includes a photodiode (208, 212, 232) disposed between the light receiving region (260) and the read-out electronics (240). The photodiode (212) produces the photo-current.

Abstract: A semiconductor radiation detector device comprises a conductive backside layer (102) of first conductivity type and a bulk layer (103). Opposite to the conductive backside layer (102) there are a modified internal gate layer (104) of second conductivity type, a barrier layer (105) of the first conductivity type and pixel dopings (110, 112, 506, 510, 512) of the second conductivity type. The pixel dopings are adapted to be coupled to a pixel voltage, which is defined as a potential difference to a potential of the conductive backside layer (102), and which creates potential minima inside the detector material for trapping the signal charges.

Abstract: The invention relates an x-ray detector module comprising a plurality of silicium-drift detector cells which are arranged next to each other on a sensor chip. Said sensor chip is arranged in a recess of a frame-shaped base support, such that the sensitive chip surface lies in the opening of said frame-shaped base support. The aim of the invention is to improve the signal/base ratio. As a result, a mask (10) is fixed to the side of the base support (2) which is opposite to the recess, said mask covering the outer edge areas of external silicium-drift detector cells of the sensor chip (8) and ridges above the sensor chip (8) protrude into the opening of the base support (2). The ridges are arranged in such a manner that they cover the defining strips which are adjacent to the silicum drift detector cells, in order to protect the external edge areas and the defining strips which are covered by the mask (10) counter to the incident x-ray photons.

Abstract: A detector for beta particles emitted from a radioisotope is provided by applying a reverse bias to a betavoltaic cell having a 4H silicon carbide semiconductor and using an outer exposure surface of the p-type layer of the semiconductor as the surface for receiving radiation.

Abstract: A avalanche mode photodiode array (102) is fabricated using a silicon on insulator wafer and substrate transfer process. The array includes a plurality of photodiodes (100). The photodiodes (100) include an electrically insulative layer (206), a depletion region (204), and first (208) and second (210) doped regions. An interconnection layer (212) includes electrodes (214, 216) which provides electrical connections to the photodiodes. The photodiode array (102) is carried by a handle wafer (217).

Abstract: The invention relates to a method for making an imagery device comprising at least one matrix of pixels made of a photon detecting semiconducting material (43), deposited on a substrate in which electronic devices are integrated and with metallic surfaces (42), in which a material capable of improving bond of the semiconducting material is deposited on the metallic surfaces (42) only of this substrate before the semiconducting material (43) is deposited on the said substrate.

Abstract: A photo-detector circuit for barcode scanners, endoscopes, and the like, includes a large area PIN photo-diode and an amplifier. Adverse effects associated with a terminal capacitance from the large area PIN diode may be minimized by maintaining a relatively constant voltage across the input terminals of the amplifier. Noise levels may be minimized by the arrangement of the amplifier circuit and the large area PIN diode resulting in an increased signal-to-noise ratio and an increased gain-bandwidth product. Due to the large numerical aperture of the photo-detector, increased resolution and/or lower output power in a reflective imaging system may be obtained with relatively low cost components. Detection area of the large area PIN diode may be larger than approximately 25 mm2 when compared to typical PIN diodes used in photo-detector applications.

Abstract: An x-ray image detector suitable for radiology has an active matrix substrate with scanning and read-out circuits. Over this active matrix substrate, which can be a two dimensional array of TFTs associated with a storage capacitance, there is deposited a photoreceptor made of a thin layer of amorphous selenium based multilayer structure. The photoreceptor is covered with a light-transparent electrode on top of which there is provided a scintillator. The indices of refraction of the scintillator and of the selenium based multilayer may be matched with the use of the biasing electrode.

Abstract: A digital radiography detector has a two-dimensional array of photosensors disposed in rows and columns. Multiple signal traces connect to the photosensors and extend in a first direction along the two-dimensional array. A switching power supply is connected to a power source and has first and second storage inductors that are substantially matched, are electrically connected in series, include flux fields that are opposite in phase, and are aligned along the first direction of the signal traces.

Abstract: The invention relates to an energy-resolving detection system for detecting radiation (4). The energy-resolving detection system comprises a first layer (21) for absorbing a part of the radiation (4) and a radiation quanta counting unit comprising a second layer (26) for counting radiation quanta of the radiation (4). A read-out unit (29) is coupled with the radiation quanta counting unit for reading out the radiation quanta counting unit. The first layer (21) and second layer (26) are arranged such that the radiation (4), which is incident on the detection system and which reaches the second layer (26), has passed the first layer (21).

Abstract: A conversion apparatus of the present invention includes a plurality of pixels including switching elements and conversion elements. The pixels are arranged in a pixel region including a switching element region in which switching elements are arranged in row and column directions and a conversion element region in which conversion elements are arranged in row and column directions. A plurality of wirings are including a second metal layer are connected to the plurality of switching elements of the column direction. Plural bias wirings of a fourth metal layer are connected to plural conversion elements. An external signal wiring of the fourth metal layer outside the pixel region is connected to the signal wirings. An external bias wiring of a first metal layer outside the pixel region is connected to the plurality of bias wirings. The external signal wiring and the external bias wiring intersect each other.

Abstract: New sensors, pixel detectors and different embodiments of multi-channel integrated circuit are disclosed. The new high energy and spatial resolution sensors use solid state detectors. Each channel or pixel of the readout chip employs low noise preamplifier at its input followed by other circuitry. The different embodiments of the sensors, detectors and the integrated circuit are designed to produce high energy and/or spatial resolution two-dimensional and three-dimensional imaging for different applications. Some of these applications may require fast data acquisition, some others may need ultra high energy resolution, and a separate portion may require very high contrast. The embodiments described herein addresses these issues and also other issues that may be useful in two and three dimensional medical and industrial imaging.

Abstract: In a radiation detecting apparatus of the invention, plural pixels are arranged, and the pixel has a conversion element converting a radiation into an electric signal and a switching element connected to the conversion element. The conversion element includes a first electrode disposed on a first surface of an insulating substrate, a second electrode disposed on the first electrode, and a semiconductor layer disposed between the first electrode and the second electrode. The first electrode is made of a light-transmitting conductive material which transmits light emitted from a light source, and the first electrode is formed from a light transmitting electroconductive material transmitting light emitted from a light source disposed on a second surface of the insulating substrate opposite to the first surface. The switching element has a light shielding member which prevents incidence of the light from the light source to the switching element.

Abstract: An optical structure enabling properties of the surface plasmons to be used is defined from a substantially binary, parameterizable unit pattern ME. The parameters a, b, c, d and hg of the pattern are chosen so as to maximize the complex amplitudes of the first two harmonics of the complex Fourier series describing the pattern ME. This structure is advantageously used in combination with a photodetector, an infrared or Terahertz optical wave emitter, or a field emission device.

Abstract: A radiation device includes a detector connected to a multi-functional radiation identifying and processing application specific integrated circuit. The detector includes a plurality of individual imaging cells, each imaging cell generating a charge in response to incident radiation events and outputting the generated charge at an imaging cell output. The application specific integrated circuit includes a different circuit connected respectively to a corresponding one of the imaging cell outputs, each circuit receiving and processing the generated charge received from the corresponding one imaging cell output. Each circuit includes a preamplifier for generating a voltage or current amplitude in response to the received charge, a counter, and a mode logic configured for setting the counter to perform, selectively, at least two of a) photon counting, b) analog to digital conversion of the one of the voltage amplitude and the current amplitude, and c) timing measurement of incident radiation events.

Abstract: The invention relates to a design structure, and more particularly, to a design structure for an alpha particle sensor in SOI technology and a circuit thereof. The structure is a silicon-on-insulator radiation detector which includes: a charge collection node; a precharge transistor that has a source from the charge collection node, a drain at Vdd, and a gate controlled by a precharge signal; an access transistor that has a source from the charge collection node, a drain connecting to a readout node, and a gate controlled by a read-out signal; and a detector pulldown transistor having a drain from the charge collection node, a source to ground, and a grounded gate.

Abstract: An imaging system includes a first image element in a first row, a second image element in the first row, a third image element in a second row, the third image element and the first image element being in a first column, a gate driver, a first electrical line extending from the gate driver, wherein the first and the second image elements are connected to the first electrical line, a second electrical line, wherein the first image element is connected to the second electrical line, and a third electrical line, wherein the third image element is connected to the third electrical line.

Abstract: A semiconductor X-ray detector device has an i layer configured to substantially a circular cylindrical shape but not a conventional top-hat shape and a p layer provided to substantially cover the circumferential side of the i layer. Both an n+ layer and an n surface electrode are arranged smaller in the area than the bottom at the n surface electrode side of the i layer in order to expose the i layer entirely to the electric field E. Accordingly, the spectrum remains not fractured in the profile when the n+ layer and the n surface electrode are not greater in the area than 33% of the bottom at the n surface electrode side of the i layer, hence permitting the resolving power to stay high.

Abstract: Each pixel is provided with a photoelectric converting device S1(1-1) or the like, a source-follower-type first transistor T1(1-1) or the like, a second transistor Te(1-1) to be turned on when reading an electrical signal from a pixel selected by a shift register SR1 for each line and outputting the signal to a readout circuit unit and a third transistor T3(1-1) to be turned on when resetting a photoelectric converting device set to a pixel selected by a shift register SR1 for each line. Moreover, a bias power source for supplying a photoelectric conversion bias to a photoelectric converting device and a reset power source for supplying a reset bias to a photoelectric converting device are set in the readout circuit unit. By using the radiation image pickup apparatus and its control method, it is possible to improve the S/N ratio while restraining noises and preferably, it is possible to perform stable and high-speed dynamic-image photographing and restrain dark current.

Abstract: Shields that transmit light to be detected and have conductivity are disposed on light receiving surfaces of photodiodes (1 and 2) to prevent electric charges from being induced to the photodiodes (1 and 2) by electromagnetic waves entered from an external. Two kinds of filters having light transmittance depending on a wavelength of light are disposed on the light receiving surfaces of the photodiodes (1 and 2), respectively, to take a difference between their spectral characteristics. The shield and filter may be made of, for example, polysilicon or a semiconductor thin film of a given conductivity type, and may be readily manufactured by incorporating those manufacturing processes into a semiconductor manufacturing process.

Abstract: A conversion apparatus includes a pixel region, on a substrate, including a plurality of pixels arranged in a matrix, with each pixel having a conversion element that converts radiation into electric charges, and a switching element. The switching element has a structure having a gate electrode, a first insulating layer, a second insulating layer, and a semiconductor layer from the substrate side in this order. The conversion element has an MIS-type structure of a bottom electrode arranged on an insulating layer extending from the first insulating layer of the switching element and being vertically higher than the gate electrode of the switching element, an insulating layer which is formed of the same layer as the second insulating layer of the switching element, and a semiconductor layer which is formed of the same layer as the semiconductor layer of the switching element from the substrate side in this order.

Abstract: An imaging radiation detector includes a scintillator coupled to an array of photodiodes operating in Geiger mode. The array is divided into separate detector pixels, each of which is composed of a multiplicity of photodiode cells with their outputs tied together. While each of the cells operates independently in a binary or digital mode, by tying together the outputs of a multiplicity of adjacent photodiode cells forming a single pixel, the sum of the outputs is proportional to the intensity of generated scintillation photons, similar to the output of a PMT. Appropriate quenching circuitry is provided to rapidly reset the photodiodes after scintillation photon detection.

Abstract: A radiological imaging apparatus comprising a semiconductor detector unit in which a plurality of semiconductor radiation detection elements are installed on a detector mounted substrate in a matrix to constitute a detector unit. A plurality of detector units are releasably mounted on a fixing substrate. This mounting is carried out mating a coupling screw with a threaded hole formed in the detector mounted substrate, the coupling screw being inserted through a through-hole formed in the fixing substrate. The detector mounted substrate is provided with a pair of positioning pins. The positioning pins are inserted into positioning holes, respectively, formed in the fixing substrate, to position the detector unit.

Abstract: Apparatus for detecting radiation, including a semiconductor which is arranged to interact with photons of the radiation, and a plurality of electrodes which are configured to sense respective charge distributions in response to interactions of the photons with a region of the semiconductor. The apparatus includes circuitry having respective detector circuits coupled to the electrodes to detect the interactions. The circuitry is configured to receive the respective charge distributions from two or more of the electrodes so as to generate respective energy distributions of the photons for each of the two or more electrodes, to compensate for variations in detection characteristics of the respective detector circuits so as to align the respective energy distributions with each other to form aligned distributions, to sum the aligned distributions to generate an overall energy distribution of the photons, and to output a signal indicative of the overall energy distribution.

Abstract: A radiological imaging apparatus using a semiconductor radiation detector to make it possible to reduce a radiation measurement off time that may result from an attempt to avoid polarization, the radiological imaging apparatus comprising a capacitor that applies a voltage to a semiconductor radiation detector that detects a radiation from a subject, first current regulated means for conducting a charge current to the capacitor, and second current regulated means for conducting a discharge current from the capacitor, or comprising a capacitor that applies a voltage to the semiconductor radiation detector, a first resistor that conducts a charge current to and a discharge current from the capacitor, and a second resistor connected in parallel with the first resistor to subject the capacitor to charging and discharging.

Abstract: Each pixel is provided with a photoelectric converting device or the like, a source-follower-type first transistor or the like, a second transistor to be turned on when reading an electrical signal from a pixel selected by a shift register for each line and outputting the signal to a readout circuit unit and a third transistor to be turned on when resetting a photoelectric converting device set to a pixel selected by a shift register for each line. Moreover, a bias power source for supplying a photoelectric conversion bias to a photoelectric converting device and a reset power source for supplying a reset bias to a photoelectric converting device are set in the readout circuit unit. By using the radiation image pickup apparatus and its control method, it is possible to improve the S/N ratio while restraining noises and preferably, it is possible to perform stable and high-speed dynamic-image photographing and restrain dark current.

Abstract: A solid state ionizing radiation detector is provided, having an absorber within which, when in use, electrical charge is generated upon the absorption of ionizing radiation. The absorber has a front face with an active region through which incident ionizing radiation is received. A front electrode is located at the front face. A rear electrode substantially covers a rear face of the absorber. The front and rear electrodes are arranged in use to generate an electric field in the absorber so as to collect the generated electrical charge. The area of the rear face is substantially smaller than that of the active region of the front face. At least part of the absorber within which the electric field is generated is bounded by substantially smooth and substantially tapered sidewalls.

Abstract: An image acquisition apparatus includes a conversion layer for generating electrons in response to electromagnetic radiation photons, and a first semiconducting layer adjacent to the conversion layer for generating electron-hole pairs in response to electrons generated by the conversion layer.

Abstract: A photodetector, detector array, and method of operation thereof in which nanojunctions are formed by crossing layers of nanowires. The crossing nanowires are separated by a few nm thick electrical barrier layer which allows tunneling. Each nanojunction is coupled to a slot antenna for efficient and frequency-selective coupling to photo signals. The nanojunctions formed at the intersection of the crossing wires defines a vertical tunneling diode that rectifies the AC signal from a coupled antenna and generates a DC signal suitable for reforming a video image. The nanojunction sensor allows multi/hyper spectral imaging of radiation within a spectral band ranging from terahertz to visible light, and including infrared (IR) radiation. This new detection approach also offers unprecedented speed, sensitivity and fidelity at room temperature.

Abstract: A cosmic ray detector includes a cantilever with a first tip. The detector also includes a second tip and circuitry to provide a signal indicative of a distance between the first and second tips being such as would be caused by a cosmic ray interaction event.

Abstract: A radiation image detector including a charge generation layer, and a detection layer including: many pixels, each having a collection electrode for collecting charges generated in the charge generation layer, a storage capacitor for storing charges collected by the collection electrode, and a TFT switch for reading out charges from the storage capacitor; many scanning lines; and many data lines. Each storage capacitor is formed between a storage capacitor electrode connected to the drain electrode of a TFT switch and the scanning line connected to a TFT switch adjacent to the TFT switch to which the drain electrode belongs, an array of the TFT switches is divided into upper and lower halves, each data line is divided into upper and lower halves, and a dummy wire is provided at the division boundary for forming a storage capacitor of a pixel disposed at the division boundary section.

Abstract: For a photosensor, an array substrate is provided, wherein the edge of a photodiode is enclosed by the opening edge of a contact hole formed on a drain electrode.

Abstract: A device and system for monitoring ionizing radiation. The device including: a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and a cathode of the diode coupled to a precharged node of a clocked logic circuit, an output state of the clocked logic circuit responsive a change in state of the precharged node, a state of the precharged node responsive to ionizing radiation induced charge collected by a depletion region of the diode and collected in the cathode.

Abstract: A sensor lower electrode of a MIS type photosensor is connected to a gate line distributed in a next line in a scanning direction through a refreshing capacitor. The MIS type photosensors of an (n?1)-th line are refreshed on the basis of an ON/OFF operation of TFTs accompanying a reading operation for a pixel column of an n-th line to thereby allow the refresh operation to be carried out every scanning line. Thus, it is possible to prevent a moving image from becoming unnatural due to the refresh operation as in the background art.

Abstract: A CMOS image sensor includes a plurality of pixels arranged in an array; a plurality of sample and hold arrays; and a routing matrix which routes a signal from each pixel to one of the sample and hold arrays in a predetermined order.

Abstract: A radiation detecting apparatus according to the present invention includes: pixels including switching elements arranged on an insulating substrate and conversion elements arranged on the switching elements to convert a radiation into electric carriers, the switching elements and the conversion elements are connected with each other, the pixels two-dimensionally arranged on the insulating substrate in a matrix; gate wiring commonly connected with a plurality of switching elements arranged in a row direction on the insulating substrate; signal wiring commonly connected with a plurality of switching elements arranged in a column direction; and a plurality of insulating films arranged between the switching elements and the conversion elements, wherein at least one of the gate wiring and the signal wiring is arranged to be put between the plurality of insulating films.

Abstract: A conversion apparatus includes pixels including switching elements provided on an insulating substrate and conversion elements disposed over the switching elements and connected to the switching elements. Conductive lines are coupled to the pixels and have terminal elements for providing a connection to an external circuit. The terminal elements are disposed in a metal layer that is formed over the conversion elements. The conversion apparatus further includes a transparent conductive layer covering surfaces of the terminal elements, and a protective layer covering edges of the terminal elements and having openings.

Abstract: The present invention discloses a photon detection device that is adapted to detect at least one packet of photons. The photon detection device may include a photon-sensitive element having an output, an amplifier; and a non-linear feedback (NLF) element. The photon-sensitive element generates charges upon the engagement of at least one photon packet therewith. An increase from a first number of charges in the photon-sensitive element to a second number of charges, results in a corresponding increase of a first reset time required to reset the first number of charges to a respective second reset time required to reset the second number of charges in the photon-sensitive element, whereby the reset time is non-linear to with respect to an increase in the charges. Additional and alternative embodiments are described and claimed.

Abstract: This invention is to provide a radiation image sensing apparatus capable of automatically adjusting an incident radiation dose without requiring high-speed driving while suppressing any attenuation of the radiation before detection, and a method of manufacturing the same. To accomplish this, a read TFT (1) is formed on an insulating substrate (11). The semiconductor layer (19) and n+-semiconductor layer (20) of an MIS photoelectric conversion element (2) are formed on a second insulating layer (18) that covers the read TFT (1) to be aligned with source and drain electrodes (16) functioning as lower electrodes. The semiconductor layer (21) of a TFT sensor (3) is formed to be aligned with a gate electrode (17) when viewed from the upper side. The semiconductor layers (19, 21) are formed from the same layer. The upper electrode (22) of the MIS photoelectric conversion element (2) is formed on the n+-semiconductor layer (20). Two ohmic contact layers (23) are formed on the semiconductor layer (21).

Abstract: When a semiconductor sensor element used for detecting high-energy x-rays and gamma rays and an amplifier are connected via wires, the capacitances vary depending on the wires, thereby causing a sensitivity variation. To solve this, a structure for making the capacitances uniform is proposed. If a staggered arrangement is used for high resolution, the capacitances by wiring are different from element to element, so dummy sensor mounting sections (2) are provided to electrode sections (3) to make the capacitance uniform. The width of the connection section is decreased depending on the wiring length so as to make the capacitance uniform.

Abstract: A method, device and system for monitoring ionizing radiation. The method including: collecting an ionizing radiation induced charge collected by the depletion region of a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and coupling a cathode of the diode to a precharged node of a clocked logic circuit such that the ionizing radiation induced charge collected by a depletion region of the diode will discharge the precharged node and change an output state of the clocked logic circuit.

Abstract: A radiation image detector with improved readout efficiency. The detector records a radiation image by generating and storing electric charges when irradiated with radiation, and the image is read out by irradiating readout light. The detector includes first line electrodes and second line electrodes disposed alternately with each other. An opaque line insulator that blocks the readout light is provided on each side face extending in the longitudinal direction of each second line electrode. The insulator has a width smaller than the distance between the first and second line electrodes. This arrangement allows the electric charges in the area of the photoconductive layer adjacent to the side faces of the first line electrodes to be fully discharged, and the electric charges in the area of the photoconductive layer adjacent to the side faces of the second line electrodes to be prevented from discharging.

Abstract: Certain exemplary embodiments comprise a system, which can comprise an imaging plate. The imaging plate can be exposable by an x-ray source. The imaging plate can be configured to be used in digital radiographic imaging. The imaging plate can comprise a phosphor-based image storage device configured to convert an image stored therein into light.

Abstract: A system may include a body defining a plurality of apertures, a plurality of conductive elements, each of the plurality of conductive elements disposed within a respective one of the plurality of apertures, an ionizable material disposed within each of the plurality of apertures, and a device coupled to each of plurality of conductive elements and to associate charge received from each of plurality of conductive elements with one or more respective image pixels.

Abstract: A sensor arrangement has a layer sequence that includes a holding substrate, an auxiliary layer, a detection layer and an insulating layer. The holding substrate holds detection elements. The auxiliary layer extends continuously over the detection elements or contains separate regions which are associated with a detection element. The detection layer has separate detection regions which are contained in a detection element and contain at least one semiconductor component which is sensitive to radiation. The insulating layer has separate insulating regions for electrically insulating the detection regions from a point of contact having electrically conductive connections and pads fitted on the free side. The pads are electrically connected to connecting points which are routed to the semiconductor components. This sensor arrangement can be used for detecting X-ray radiation and can be manufactured with particular ease.

Abstract: An infrared detector includes a silicon substrate, an infrared reflecting film, a diaphragm including a bolometer thin film, disposed above the silicon substrate across a gap, and a signal line that electrically connects the bolometer thin film and the infrared reflecting film, such that the bolometer thin film and the infrared reflecting film constantly become equipotential with each other. In place of the signal line, a conductor independently provided from interconnects in the silicon substrate may be employed.