Abstract: A cosmic ray detector includes a cantilever with a first tip. The detector also includes a second tip and circuitry to provide a signal indicative of a distance between the first and second tips being such as would be caused by a cosmic ray interaction event.

Abstract: The present invention provides a practical design of a megavoltage x-ray detector with both high quantum efficiency (QE) and high resolution. The x-ray detector includes an optical-fiber taper (OFT) made from a large number of optical fibers, each of which is aligned with the incident x-rays from an x-ray source hitting a top surface of the optical fiber taper. The optical-fiber taper is a matrix of optical fibers with the core material made of, e.g., silica and coated with a cladding glass or polymer such that light created within the core of each optical fiber will be guided to the bottom ends of the fiber with the ends of the fibers at the bottom being optically coupled to and optical image read-out device. Each optical fiber in the optical fiber taper is fully aligned with the incident x-ray source so that x-rays entering the top of the fiber travel directly towards the bottom of the same fiber.

Abstract: A reset method of a conversion element is improved, and the simplification of wiring and the improvement of an open area ratio of the conversion element by means of an image pickup apparatus including a plurality of pixels arranged on an insulating substrate, each of the pixels including a conversion element, a first switching element connected to the conversion element in order to transfer an electric signal obtained by the conversion element, and a second switching element connected to the conversion element in order to reset the conversion element by giving constant potential to the conversion element, wherein the second switching element includes a gate electrode, and a source electrode and a drain electrode, and one of the source electrode and the drain electrode is electrically connected to the gate electrode.

Abstract: This invention is to provide a radiation image sensing apparatus capable of automatically adjusting an incident radiation dose without requiring high-speed driving while suppressing any attenuation of the radiation before detection, and a method of manufacturing the same. To accomplish this, a read TFT (1) is formed on an insulating substrate (11). The semiconductor layer (19) and n+-semiconductor layer (20) of an MIS photoelectric conversion element (2) are formed on a second insulating layer (18) that covers the read TFT (1) to be aligned with source and drain electrodes (16) functioning as lower electrodes. The semiconductor layer (21) of a TFT sensor (3) is formed to be aligned with a gate electrode (17) when viewed from the upper side. The semiconductor layers (19, 21) are formed from the same layer. The upper electrode (22) of the MIS photoelectric conversion element (2) is formed on the n+-semiconductor layer (20). Two ohmic contact layers (23) are formed on the semiconductor layer (21).

Abstract: A high-energy radiation detector is disclosed which uses a semiconductor material to absorb high-energy radiation and emit secondary light in response. The semiconductor is designed to be largely transparent for the interband light it emits so that the generated secondary photons can reach the semiconductor surface, to be detected by a suitable photo-detector. The semiconductor thus plays a role of a scintillator with the emitted light registered by a photo-detector. Two different device embodiments are disclosed. The first embodiment employs a uniform bulk slab of the appropriately chosen semiconductor, such as n-doped InP. Its principal advantage lies in the simplicity and low cost. The second device employs a multi-layer heterostructure. The principal advantage of the second type detector is the possibility of a substantial enhancement in the efficiency of absorption of the primary high-energy radiation.

Abstract: A photodetector for X-ray applications includes a photodiode at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer may be disposed around the entire peripheral edge of the detector, and maintained at a common potential with a contact layer, or at a different potential. A passivation or dielectric layer separates the gate layer from the photodiode. Leakage around the edge of the diode that can result from extended exposure to radiation is reduced by the gate layer.

Abstract: The invention relates to a detector for determining the position and/or energy of photons and/or charged particles. Said detector comprises a plurality of diodes made of a semi-conductor material, n-contacts (1) and p-contacts (4), the n-contacts being provided by dividing an n-layer into individual segments. Said segments of the n-layer are 20–500 ?m wide. Said detectors are produced by diffusing ions on the side of the semi-conductor material in order to produce an n-contact. A metallic layer is metallized thereon. Trenches are etched between the segments by means of lithography for the segmentation thereof. The inventive detector is high-powered and inter alia enables a high local resolution and high counting rates.

Abstract: The invention relates to a conductor crossover for a semiconductor detector, particularly for a drift detector for conducting X-ray spectroscopy. The conductor crossover comprises at least two doped semiconductor electrodes (2), which are placed inside a semiconductor substrate (1), at least one connecting conductor (M), which is guided over the semiconductor electrodes (2), and a first insulating layer (Ox). An intermediate electrode (L) is situated between the connecting conductor (M) and the first insulation layer (Ox). Said intermediate electrode overlaps the area of the semiconductor substrate (1) between the semiconductor electrodes (2) and is electrically insulated from the connecting conductor (M) by at least one additional insulation layer (I). The invention also relates to a drift detector equipped with a conductor crossover of this type and to a detector arrangement for conducting X-ray spectroscopy.

Abstract: A radiation detector is described which includes first circuitry having at least one operational parameter associated therewith which is operable to change in response to radiation exposure. Second circuitry is operable to detect a change in the at least one operational parameter based on a predetermined relation between the at least one operational parameter and at least one type of radiation. The second circuitry is also operable to encode detection information representative of the radiation exposure in response thereto.

Abstract: A semiconductor detector has a tunable spectral response. These detectors may be used with processing techniques that permit the creation of “synthetic” sensors that have spectral responses that are beyond the spectral responses attainable by the underlying detectors. For example, the processing techniques may permit continuous and independent tuning of both the center wavelength and the spectral resolution of the synthesized spectral response. Other processing techniques can also generate responses that are matched to specific target signatures.

Abstract: The present invention provides a practical design of a megavoltage x-ray detector with both high quantum efficiency (QE) and high resolution. The x-ray detector disclosed herein has a QE that can be an order of magnitude higher than that of current flat panel systems and yet has a spatial resolution equivalent to that of current flat panel systems used for portal imaging. The x-ray detector includes a large number of micro-structured electrically conducting plates, packed together with thin spacers placed between neighboring plates with the micro-structured plates oriented to be parallel to the incident x-rays in operation. Each plate includes an electrically conductive substrate with a first planar surface, elongate electrically conductive strip electrodes separated from each other with strip spacers placed in between and sitting on an insulating layer interposed between the first planar surface of the electrically conductive substrate and the strip electrodes.

Abstract: The invention relates to a detector element for x-radiation, which can be used in particular in a flat dynamic x-ray detector (FDXD). In the detector element, a directly converting conversion layer (2) is arranged between an electrode layer (2) and a matrix of pixel electrodes (4), there also being a photoconductive separating layer (3) between the pixel electrodes (4) and the conversion layer (2). In the unilluminated state, the separating layer (3) acts as an electrical barrier for free charge carriers of the conversion layer (2), which have been produced by x-radiation and migrate in the electric field between the electrodes (1, 4). After readout of the charge transfers in the pixel electrodes (4), the separating layer (3) can be rendered conductive by illumination with reset light from a diode arrangement (6), so that charge accumulations at its interface can flow away.

Abstract: A quantum-well infrared photodetector (QWIP) is presented. The photodetector includes a substrate, a buffer layer, a first conductive layer, a multiple quantum well, an optional blocking layer, and a second conductive layer. Substrate is composed of a monocrystal which may be removed after fabrication. Remaining layers are composed of group III-V nitrides, including binary, ternary, and quaternary compositions. Alternate embodiments of the present invention include a doped binary alloy along first and second conductive layers, a binary alloy along buffer and blocking layers, and alternating alloys of binary, ternary and quaternary compositions within the multiple quantum well. The present invention responds to infrared light at normal and oblique incidences, from near infrared to very far infrared.

Abstract: This invention is to provide a radiation image sensing apparatus capable of automatically adjusting an incident radiation dose without requiring high-speed driving while suppressing any attenuation of the radiation before detection, and a method of manufacturing the same. To accomplish this, a read TFT (1) is formed on an insulating substrate (11). The semiconductor layer (19) and n+-semiconductor layer (20) of an MIS photoelectric conversion element (2) are formed on a second insulating layer (18) that covers the read TFT (1) to be aligned with source and drain electrodes (16) functioning as lower electrodes. The semiconductor layer (21) of a TFT sensor (3) is formed to be aligned with a gate electrode (17) when viewed from the upper side. The semiconductor layers (19, 21) are formed from the same layer. The upper electrode (22) of the MIS photoelectric conversion element (2) is formed on the n+-semiconductor layer (20). Two ohmic contact layers (23) are formed on the semiconductor layer (21).

Abstract: A low energy charged particle detector having a diode with a first layer and a top layer physically coupled to the first layer. The intersection between the first layer and the top layer defines a junction. The top layer is composed of a two-dimensional material such as a chalcogen-based material, providing an electrically passivated exposed outer surface opposite to the junction. The outer surface is exposed to receive low-energy charged particles from external sources. An appropriate control circuit is coupled to the diode, and operable to recognize the incidence of a particle upon the outer surface as a change in current or voltage potential.

Abstract: Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.

Abstract: An image reading apparatus includes a DC/DC power supply which supplies power to at least part of the apparatus, a photodetector array including two-dimensionally arranged photoelectric conversion elements, and a line selector and reading circuit which read signals from the photoelectric conversion elements for each row in the photodetector array as a unit. A line driving signal in the line selector is set to be synchronized with a reference clock for defining the oscillation frequency of the DC/DC power supply and have a period of an integer multiple of the reference clock. A sample/hold signal for determining the timing at which a signal read from the photodetector array is sampled/held is output at a predetermined phase timing of each period of the line driving signal.

Abstract: This invention relates to a particle detector comprising means (1, 2, 3) of delivering electrical pulses and means (4) of counting delivered electrical pulses. The detector comprises means capable of receiving and transmitting electrical pulses originating from at least one second particle detector to the counting means (4) and means capable of transmitting electrical pulses that it delivers and electrical pulses that it receives from the said second particle detector to the counting means of a third particle detector. The invention is particularly applicable to radiology (X-ray, radioscopy).

Abstract: This invention relates to a novel optoelectronic chip with one or more optoelectronic devices, such as photodiodes, fabricated on a front side of a semiconductor wafer and contacts on a backside of the semiconductor wafer. The backside contacts can be contact bumps, which allow the optoelectronic chip to achieve the benefits of flip chip packaging without flipping the optoelectronic chip upside down with respect to a chip carrier. In an optical communication system, a photodiode chip can be backside bumped to a chip carrier or an electronic chip, allowing front side illumination of the photodiode chip. Front side illumination offers many benefits, including improved fiber alignment, reduced manufacturing time, and overall cost reduction.

Abstract: The present invention provides a practical design of a megavoltage x-ray detector with both high quantum efficiency (QE) and high resolution. The x-ray detector disclosed herein has a QE that can be an order of magnitude higher than that of current flat panel systems and yet has a spatial resolution equivalent to that of current flat panel systems used for portal imaging. The x-ray detector includes a large number of micro-structured electrically conducting plates, packed together with thin spacers placed between neighboring plates with the micro-structured plates oriented to be parallel to the incident x-rays in operation. Each plate includes an electrically conductive substrate with a first planar surface, elongate electrically conductive strip electrodes separated from each other with strip spacers placed in between and sitting on an insulating layer interposed between the first planar surface of the electrically conductive substrate and the strip electrodes.

Abstract: A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first electrode layer, an insulating layer for inhibiting carriers from transferring, a photoelectric converting semiconductor layer of a non-single-crystal type, an injection blocking layer for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer are laminated in this order on an insulating substrate.

Abstract: Biosensor circuit arrangement including a substrate, a sensor element formed in or on a surface region of the substrate with a physical parameter, which is coupled to a substance to be examined, the type of coupling having a resistive component, the sensor element having an electrically conductive sensor electrode that is coupled to the substance to be examined, the sensor element having a measuring transistor the gate terminal of which is coupled to the electrically conductive sensor electrode, and the physical parameter being the threshold voltage of the measuring transistor, and a calibration device formed in or on the substrate, the calibration device being set up such that it is used to at least partly compensate for an alteration of the value of the physical parameter of the sensor element.

Abstract: A structure of a TFT substrate for a high resolution digital x-ray detector, in which two TFT substrates are arranged to be a double substrate by overlapping each other such that an upper plate is moved ½ pixel distance with respect to a lower plate in a direction along one axis. Thus, a difference in movement between the upper and lower plates is a ½ pixel distance. Also, two virtual pixels are obtained from one pixel. Three TFT substrates are arranged to be a triple substrate by overlapping one another such that a middle plate is moved a ½ pixel distance with respect to a lower plate in a direction along an X axis and an uppermost plate is arranged by being moved a ½ pixel distance with respect to the lower plate in a direction along a Y axis. Thus, resolution is increased as data of one pixel is divided into four data to be analyzed and an measured value of a pixel of each overlapping substrate is compared.

Abstract: An amplifying device for a sensor (10) delivering a response in voltage or impedance has a voltage controlling means for the sensor and at least an additional impedance (12). The voltage controlling means (22) is connected to output terminals (16, 20) of the sensor to maintain a noticeably constant voltage between the terminals. The additional impedance (12) is connected in series with the sensor within a polarization circuit, between the output terminals (18–16; 18–20) of the device. The amplifying device may be applied to temperatures, irradiation levels and pH measurement.

Abstract: A high-purity InSb single crystal not artificially doped with impurities is used as a radiation detecting medium. In order to obtain diode characteristics, a Au.Pd alloy is used to form a surface barrier layer. At 4.2 K, the device resistance of the thus fabricated solid-state radiation detector was as large as 1.4 k? and the rise time of output signals from a charge-sensitive preamplifier was as short as 0.4 ?s, indicating reduced trapping of electrons or positive holes. The detector was also capable of measuring ?-ray spectra over the temperature range from 2 K to 50 K.

Abstract: A detection system for detecting gamma rays including a scintillator crystal for receiving at least one gamma ray and generating at least one ultraviolet ray and an avalanche photodiode for detecting the ultraviolet ray. The avalanche photodiode includes: a substrate having a first dopant; a first layer having a second dopant, positioned on top of the substrate; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned above of the first layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the first layer. The avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape.

Abstract: A radiation detector formed using silicon-on-insulator technology. The radiation detector includes a silicon layer formed on an insulating substrate, wherein the silicon layer includes a PNPN structure, and a gate layer formed over the PNPN structure, wherein the gate layer includes a PN gate. Latch-up occurs in the radiation detector only in response to incident radiation.

Abstract: By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process. A gate line Vg4 and a Vg redundant wiring are electrically insulated and are arranged so as to form a crossing G of the upper and lower lines. Since a Vg redundant wiring Y is formed concurrently with a Sig line, there is no need for additional manufacturing steps to form the Vg redundant wiring Y. If a breaking occurs in the gate line Vg4, the gate line Vg4 and the Vg redundant wiring Y are electrically connected to each other by irradiating the crossing G with a laser. Therefore, a gate drive pulse is also applied to a thin film transistor on the broken line through the Vg redundant wiring Y. Thus, any lowering in yield due to a breaking of the gate line Vg4 can be prevented without any decrease in the aperture ratio for the photoelectric conversion element.

Abstract: A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first electrode layer, an insulating layer for inhibiting carriers from transferring, a photoelectric converting semiconductor layer of a non-single-crystal type, an injection blocking layer for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer are laminated in this order on an insulating substrate.

Abstract: An x-ray image detector suitable for radiology has an active matrix substrate with scanning and read-out circuits. Over this active matrix substrate, which can be a two dimensional array of TFTs associated with a storage capacitance, there is deposited a photoreceptor made of a thin layer of amorphous selenium based multilayer structure. The photoreceptor is covered with a light-transparent electrode on top of which there is provided a scintillator. The indices of refraction of the scintillator and of the selenium based multilayer may be matched with the use of the biasing electrode.

Abstract: By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process. A gate line Vg4 and a Vg redundant wiring are electrically insulated and are arranged so as to form a crossing G of the upper and lower lines. Since a Vg redundant wiring Y is formed concurrently with a Sig line, there is no need for additional manufacturing steps to form the Vg redundant wiring Y. If a breaking occurs in the gate line Vg4, the gate line Vg4 and the Vg redundant wiring Y are electrically connected to each other by irradiating the crossing G with a laser. Therefore, a gate drive pulse is also applied to a thin film transistor on the broken line through the Vg redundant wiring Y. Thus, any lowering in yield due to a breaking of the gate line Vg4 can be prevented without any decrease in the aperture ratio for the photoelectric conversion element.

Abstract: A CMOS pixel responsive to different colors of optical radiation without the use of color filters is described. A deep N well is formed in a P type silicon substrate. An N well is then formed at the outer periphery of the deep N well to form a P well within an N well structure. Two N+ regions are formed in the P well and at least one P+ region is formed in the N well. A layer of gate oxide and a polysilicon electrode is then formed over one of the N+ regions. The PN junction between the deep N well and the P type silicon substrate is responsive to red light. The PN junction between the deep N well and the P well is responsive to red light. The PN junction between the P well and the N+ region which is not covered by polysilicon and the PN junction formed by the N well and the P+ region are responsive to green or blue light. The PN junction formed by the junction between the P well and the N+ region which is covered by polysilicon is responsive to green light.

Abstract: A method of forming a SIMS monitor device for determining a doping profile of a semiconductor device structure including providing a plurality of regularly repeating semiconductor structures including a doping profile to form a monitor device including at least one layer of the regularly repeating semiconductor structures; planarizing the monitor device through a thickness of the regularly repeating semiconductor structures to reveal a target surface overlying the doping profile to form a monitor pattern; and, sputtering the target surface over a sputtering area including the monitor pattern through a thickness thereof while simultaneously detecting and counting over a time interval at least one type of species ejected from the target surface according to a secondary ion mass spectroscopy procedure (SIMS).

Abstract: A photodiode array comprises a semiconductor substrate formed with an array of a plurality of pn junction type photodiodes on a light incident surface side, the surface opposite from the incident surface in the semiconductor substrate being made of a (100) plane; a through hole, formed in an area held between the photodiodes, penetrating through the semiconductor substrate from the incident surface side to the opposite surface side; and a conductive layer extending from the incident surface to the opposite surface by way of a wall surface of the through hole; the through hole being formed by connecting a vertical hole part formed substantially perpendicular to the incident surface on the incident surface side, and a pyramidal hole part formed like a quadrangular pyramid on the opposite surface side to each other within the semiconductor substrate; the pyramidal hole part having a wall surface formed as a (111) plane.

Abstract: An electric field is applied to a charge emitting layer. The charge emitting layer absorbs radioactive rays generated by a radiation source, converts the rays into electric charges, and emits the converted charges. The electric field has an intensity satisfying a lower limit of a specification value of a carrier capturing efficiency and an upper limit of a specification value of a dark current density. A dark current at a trap level can be lowered, a carrier capturing efficiency can be improved, and radioactive rays can be detected with small noises and at a high sensitivity. It is possible to reliably detect incident radioactive rays and form an image of incident radioactive rays.

Abstract: An X-ray image sensing device is manufactured to prevent an open of a ground line. The X-ray image sensing device has a plurality of pixels in a matrix configuration. A pixel includes: a photoelectric conversion part to receive X-rays and generate electric charges; a charge storage part to accumulate the electric charges produced in the photoelectric conversion part, having a capacitor electrode, a pixel electrode and a dielectric layer located between the pixel electrode and the capacitor electrode, a ground line for discharging residual charges in the charge storage part, positioned on the capacitor electrode to electrically contact the capacitor electrode, and extending to the adjacent pixel; and a switching part to control release of the charges stored in the charge storage part. In one case, the capacitor electrode extends to an adjacent pixel. Alternatively, the capacitor electrode has an end contact line, contacting the ground line, with a length greater than the width of the ground line.

Abstract: To provide a radiographic image pickup apparatus comprising a substrate, a plurality of pixels each of which is constituted by an MIS-type photoelectric conversion device and a switching device, the pixels being two-dimensionally arranged on the substrate, a plurality of control wirings connected to control electrodes of the switching devices, a plurality of signal wirings for reading signals from the MIS-type photoelectric conversion devices, and second switching unit for switching a bias for turning on the switching device to at least one of a first bias and a second bias.

Abstract: Each detector element 44 in a solid state position sensitive detector (PSD) could provide a low charge efficiency per X-ray quantum; moreover, a comparatively high stray capacitance 104 could exist between the take-off electrode 90 and the semiconductor material 86, 88, 92 whereto it is connected. These effects will give rise to a low signal-to-noise ratio, thus degrading the signal. According to the invention, the analog charge amplifiers 58 are constructed in integrated bipolar technology and their read-out circuitry 48 is embodied in digital technology, preferably in a BICMOS process in the form of the Current Mode Logic (CML) technique. Moreover, the digital signal processing circuitry may be accommodated on the same substrate as the charge amplifiers.

Abstract: A photodetector and a method for detecting radiation are disclosed. The photodetector comprises a zone of a semiconductor material suitably doped to collect photogenerated charges, coupled in parallel to a capacitance between a ground voltage and a sensing node. A metal oxide semiconductor (MOS) transistor is coupled at its source and a drain between the sensing node and a supply voltage, and a means for applying a predetermined voltage to the gate of the transistor Ls provided. In operation, the capacitance is first charged so that the magnitude of a voltage at the sensing node is greater than a transition voltage magnitude, and a predetermined gate voltage is applied. The transistor then is non-conductive, and a photocurrent of a magnitude dependent on the intensity of incident radiation flows through the zone of semiconductor material, discharging the capacitance and causing the sensing node voltage to vary substantially linearly with the photocurrent magnitude.

Abstract: An X-ray sensing array substrate that includes a storage capacitor having first and second capacitor electrodes and a pixel electrode over the storage capacitor. One of the capacitor electrodes contacts a drain electrode of a thin film transistor through a first contact hole in an insulating layer. The pixel electrode contacts that capacitor electrode through a second contact hole through a second insulting layer. Therefore, the drain electrode is connected to the storage capacitor through only one contact, while the pixel electrode contacts the storage capacitor through only one contact. This reduces the drain electrode to capacitor resistance, reduces the voltage drop, and increases the sensitivity of the array.

Abstract: A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.

Abstract: A method for fabricating a radiation detector including at least one Thin Film Transistor (TFT) includes forming a low resistance data line strap unitary with a light block element on the TFT.

Abstract: A detector assembly is introduced that provides shielding of irradiation vulnerable regions of an X-ray detector against directly impinging and scattered X-rays. A shielding unit has a primary aperture to shape an X-ray beam reflected from a test area of a work piece such that the shaped beam directly impinges an X-ray sensing area of the detector. A secondary aperture shields off X-rays scattering off along the edges of the primary aperture. In the preferred embodiment, the shielding unit is a monolithic structure. An area between primary and secondary aperture is laterally recessed to prevent a portion of scattered X-rays from being deflected onto the sensing area.

Abstract: An active pixel sensor. A solid state radiation detection unit may be fabricated using a semiconductor substrate having a plurality of CMOS pixel circuits incorporated into the substrate. An array of pixel circuits includes within each circuit a charge collecting pixel electrode, a charge sensing node, a gate bias transistor for separating the charge collecting pixel electrode and the charge sensing node and for maintaining the pixel electrodes at substantially equal potential, and a pixel capacitor to store charges collected by the charge collecting pixel electrodes. A charge measuring circuit comprising at least one transistor may also be configured with each pixel circuit. The sensor may further include a radiation absorbing layer comprised of photoconductive material, as well as a surface electrode layer comprised of electrically conducting material.

Abstract: A semiconductor energy detector having a region for detection and charge accumulation/transfer where a two-dimensional pixel array is formed on a surface of a semiconductor substrate on which energy rays become incident, is characterized in that the region for detection and charge accumulation/transfer comprises a plurality of transfer electrodes formed in each pixel, and an excess charge removing means arranged in correspondence with one of the transfer electrodes in each pixel.

Abstract: A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

Abstract: A radiation measuring technique includes adjusting a threshold level of a radiation sensor in a radiation-measuring circuit and obtaining an output signal based on radiation dose sensed by the radiation sensor.

Abstract: A method for fabricating a radiation detector including at least one Thin Film Transistor (TFT) includes forming a low resistance data line strap unitary with a light block element on the TFT.

Abstract: A family of isostructural compounds have been prepared having the general formula AnPbmBinO2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.

Abstract: A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first electrode layer, an insulating layer for inhibiting carriers from transferring, a photoelectric converting semiconductor layer of a non-single-crystal type, an injection blocking layer for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer are laminated in this order on an insulating substrate.