Abstract: A novel radiation detector system is disclosed that solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration.

Abstract: Systems and methods for providing a shared charge in pixelated image detectors are provided. One method includes providing a plurality of pixels for a pixelated solid state photon detector in a configuration such that a charge distribution is detected by at least two pixels and obtaining charge information from the at least two pixels. The method further includes determining a position of an interaction of the charge distribution with the plurality of pixels based on the obtained charge information.

Abstract: A stacked-type detection apparatus includes a plurality of pixels arranged in a matrix having row and column directions. Each pixel includes a conversion element configured to convert radiation or light into an electric charge, and a switch element configured to output an electric signal corresponding to the electric charge. A driving line is connected to switch elements arranged in the row direction, and a signal line is connected to switch elements arranged in the column direction. In each pixel, the conversion element is disposed above the switch element. The signal line is formed by a conductive layer embedded in an insulating layer located below an uppermost surface portion of a main electrode of the switch element located below an uppermost surface portion of the driving line located below the conversion element.

Abstract: A capacitive sensor device for measuring radiation. The device includes two sensor regions and top plate structure. The sensor regions are of a material that generates electron-hole pairs when radiation strikes the material. A separation region is located between the two sensor regions. The capacitance between a sensor region and top plate is dependent upon radiation striking the sensor region. A blocking structure selectively and differentially blocks radiation having a parameter value in a range from the sensor region so as to differentially impact electron-hole pair generation of one sensor region with respect to electron-hole pair generation of the other sensor region at selected angles of incidence of the radiation.

Abstract: A radiation detector includes an array of detector pixels each including an array of detector cells. Each detector cell includes a photodiode biased in a breakdown region and digital circuitry coupled with the photodiode and configured to output a first digital value in a quiescent state and a second digital value responsive to photon detection by the photodiode. Digital triggering circuitry is configured to output a trigger signal indicative of a start of an integration time period responsive to a selected number of one or more of the detector cells transitioning from the first digital value to the second digital value. Readout digital circuitry accumulates a count of a number of transitions of detector cells of the array of detector cells from the first digital state to the second digital state over the integration time period.

Abstract: A soft X-ray detection apparatus includes a semiconductor substrate. The semiconductor substrate has a plurality of detection units disposed thereon, each including a conversion unit and a circuit unit. The conversion unit is formed from, for example, a photodiode. The conversion unit collects electric charge generated upon incidence of soft X-ray radiation. A first conductive type (e.g., N-channel type) amplifier transistor is disposed in the circuit unit. The amplifier transistor serves as an amplifier unit that amplifies and outputs a signal supplied from the conversion unit. A first conductive type transistor is not disposed between the conversion units that are immediately adjacent to each other. Alternatively, transistors included in the detection units that are immediately adjacent to each other are disposed so as to be in close proximity to each other.

Abstract: A radiation detection apparatus comprises a plurality of pixels each including a conversion element which converts incident radiation into a charge, a switching element which transfers the charge, and an interlayer insulation film disposed between the conversion element and the switching element, a gate line to drive the switching element, and a signal line located to intersect with the gate line and configured to read out the charge transferred from the switching element, wherein Ca??0×?×S/d and 7d?P/2 is satisfied, where P is a pixel pitch, Ca is a sum total of coupling capacitances between the signal line and the gate line, S is an overlapping area of the signal line and the conversion element, d is a thickness of the interlayer insulation film, ? is a relative dielectric constant of the interlayer insulation film, and ?0 is a vacuum dielectric constant.

Abstract: An organic semiconductor device for detecting and measuring radiation has a total active area of less than 100 square microns (?m2) and comprises at least two bulk organic semiconductor regions with each region connected on one side to an independent biasing voltage electrode and connected on an opposing side to a common output electrode.

Abstract: A silicon drift detector (SDD) comprising electrically isolated rings. The rings can be individually biased doped rings. One embodiment includes an SDD with a single doped ring. Some of the doped rings may not require a bias voltage. Some of the rings can be field plate rings. The field plate rings may all use the same biasing voltage as a single outer doped ring. The ring widths can vary such that the outermost ring is widest and the ring widths decrease with each subsequent ring towards the anode.

Abstract: Neutron detection cells and corresponding methods of detecting charged particles that make efficient use of silicon area are set forth. Three types of circuit cells/arrays are described: state latching circuits, glitch generating cells, and charge loss circuits. An array of these cells, used in conjunction with a neutron conversion film, increases the area that is sensitive to a strike by a charged particle over that of an array of SRAM cells. The result is a neutron detection cell that uses less power, costs less, and is more suitable for mass production.

Abstract: In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Abstract: An X-ray detector includes a photoconductor, a first diffusion barrier film on a first surface of the photoconductor, at least one pixel electrode on the first diffusion barrier film, a signal transmitting unit to process an electrical signal output from the at least one pixel electrode, and a common electrode on a second surface of the photoconductor opposite to the first surface of the photoconductor.

Abstract: A radiation detector comprises a substrate of diamond material and at least one electrode formed at a surface of the substrate. The electrode comprises electrically conductive material deposited in a cavity in the surface of the substrate so that at least a portion of the material of the electrode is below the surface of the substrate. The cavity will typically be an elongate trench or channel in which electrically conductive material such as boron-doped diamond is deposited. In some embodiments, at least two electrodes are located adjacent to one another at the surface of the substrate. In other embodiments, the device has a plurality of electrodes, at least one of which is located at a first surface and at least one of which is located at an opposed second surface of the substrate.

Abstract: An X-ray detector and a method of driving the X-ray detector. Each of a plurality of light sensing pixels of the X-ray detector includes: a photodiode which generates an electric detection signal corresponding to an emitted X-ray in an X-ray detection section; a first switching device which transmits the electric detection signal to the outside; a second switching device which applies a voltage for making both ends of the photodiode equipotential to a node to which the photodiode and the first switching device are connected, in an idle section; and a third switching device which applies a voltage for maintaining a constant potential difference at the both ends of the photodiode to the node in the idle section.

Abstract: An intermediate layer is located between a recording photoconductive layer and an electrode, which is either one of a bias electrode and a reference electrode, and which is located on the side at positive electric potential with respect to a charge accumulating section at the time of readout of electric charges of the charge accumulating section. The intermediate layer is an a-Se layer containing, as a specific substance, at least one kind of substance selected from the group consisting of an alkali metal fluoride, an alkaline earth metal fluoride, an alkali metal oxide, an alkaline earth metal oxide, SiOx, and GeOx, where x represents a number satisfying 0.5?x?1.5, in a concentration falling within the range of 0.003 mol % to 0.03 mol %.

Abstract: An X-ray detector panel comprises: a substrate; a transistor including a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, an active layer disposed on the gate insulating layer, and a source electrode and a drain electrode disposed on the active layer and separated from each other; a photodiode including a first electrode connected to the drain electrode of the transistor, a photoconductive layer disposed on the first electrode, and a second electrode disposed on the photoconductive layer; an interlayer insulating layer including a first interlayer insulating layer covering the transistor and the photodiode, the first interlayer insulating layer being formed of an insulating material having a band gap energy of about 8 eV to about 10 eV; a data line disposed on the interlayer insulating layer and contacting the source electrode of the transistor via the interlayer insulating layer; a bias line disposed on the interlayer insulating layer and contacting the second

Abstract: A semiconductor detector has a tunable spectral response. These detectors may be used with processing techniques that permit the creation of “synthetic” sensors that have spectral responses that are beyond the spectral responses attainable by the underlying detectors. For example, the processing techniques may permit continuous and independent tuning of both the center wavelength and the spectral resolution of the synthesized spectral response. Other processing techniques can also generate responses that are matched to specific target signatures.

Abstract: A stacked-type detection apparatus including a plurality of pixels arranged at small intervals is configured to have low capacitance associated with signal lines and/or driving lines. With this novel configuration, small time constant and high-speed driving capability can be achieved in the signal lines and/or driving lines. The plurality of pixels in the detection apparatus are arranged in a row direction and a column direction on an insulating substrate. Each pixel includes a conversion element and a switch element, the conversion element is disposed above the switch element. A driving line disposed below the conversion elements is connected to switch elements arranged in the row direction, and a signal line is connected to switch elements arranged in the column direction. The signal line includes a conductive layer embedded in an insulating member, the insulating member is disposed in a layer lower than an uppermost surface portion of the driving line.

Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum of the sample. The diffraction spectrum is corrected to compensate for a non-uniform property of the converging beam.

Abstract: A radiation beam analyzer for measuring the distribution and intensity of radiation produced by a Cyberknife®. The analyzer employs a relative small tank of water into which a sensor is placed to maintain a constant SAD (source to axis distance). A first method maintains a fixed position of detector, and raises or lowers the small tank of water. A second method moves the detector up, down or rotationally synchronously in opposite directions with respect to the small tank of water to keep the SAD constant. These methods position the detector relative to the radiation source to simulate the location of a malady within a patient's body. An embodiment of the present invention enables measurements of substantially larger fields.

Abstract: Apparatus and methods for effectively detecting and locating explosive substances within remote targets, including improvised explosive devices (IEDs). The detection apparatus includes a neutron beam generator, a pixilated gamma ray detector, data collection modules and sensors, and a detection processing module. The neutron beam generator includes a fast neutron source, a neutron moderator to slow some or all of the fast neutrons to thermal energies, a partially enclosing neutron shield, and a rotatable neutron shield surrounding the generated neutrons. The neutron shield has an aperture to form a neutron beam directed at a remote target. If the remote target contains explosive substances, gamma rays radiate isotropically from the remote target when it is bombarded by the neutrons. A portion of these gamma rays are intercepted and detected by a plurality of discrete gamma sensing elements contained in the gamma ray detector, which is spaced apart from the neutron source.

Abstract: The invention relates to a method for calibrating a measurement tool for measuring the radiation in a radiation system, such as a radiation therapy system. The measurement tool, including a holder and at least one photodiode element, is adapted to be mounted in a positioning unit of the radiation system. The radiation sensitive volume of the photodiode element is embedded in a light transparent coating transparent for, for instance, light in the visible spectrum. Thereby, the position of the sensitive volume can easily be determined or calculated with high accuracy relatively the holder on which the photodiode element is arranged, from which the position of the sensitive volume can be determined or calculated in relation to the positioning unit of the radiation system. The invention also relates to a calibration system for performing the calibration method and a measurement tool for use in the calibration system.

Abstract: A CMOS TDI image sensor consists of M pixels where each pixel is formed by a column of N TDI stages. Each TDI stage contains a photodiode that collects photo-charge and a pre-amplifier that proportionally converts the photo-charge to a voltage. Each TDI stage also has a set of capacitors, amplifiers, and switches for storage of the integrated signal voltages, where Correlated Double Sampling (CDS) technique (true or pseudo) maintains both photo-signal and reset voltages simultaneously. The CDS signal voltages can be passed from one TDI stage to the next TDI stage along a column for summing. The CDS signal voltages of the last TDI stages of M pixels are read out with a differential amplifier. This CMOS TDI structure is especially advantageous for implementing X-ray scanning detector systems requiring large pixel sizes and signal processing circuitry that is physically separated from the photodiode array for X-ray shielding.

Abstract: A read circuit includes: an integration circuit section configured to perform an integral operation and whose input is connected to an integration node; and a bias circuit connected between a connection node to which a variable resistive element is connected and the integration node. The bias circuit includes: an integration transistor whose source and drain are respectively connected to the connection node and the integration node; an operational amplifier whose output is connected to a gate of the integration transistor, to whose first input a bias voltage is supplied, and whose second input is connected to the source of the integration transistor; and at least one diode element that is connected between the gate and source of the integration transistor and clips a gate-source voltage of the integration transistor.

Abstract: A radiation detector is disclosed. The detector includes a detector element on which electrodes are formed. First and second electrodes are provided at a first surface of the detector element, and are arranged such that, on application of an electric field between the first and second electrodes, a first detector region is formed adjacent the first surface of the detector element. A third electrode is provided on a second surface of the detector element, and is arranged such that, on application of an electric field between the first and third electrodes, a second detection region is formed between the first and second surfaces of the detector element. The first and second detection regions are differently sized for the detection of different types of radiation. Device for detecting radiation, and handheld devices containing such device, are also disclosed.

Abstract: Systems and methods for providing a shared charge in pixelated image detectors are provided. One method includes providing a plurality of pixels for a pixelated solid state photon detector in a configuration such that a charge distribution is detected by at least two pixels and obtaining charge information from the at least two pixels. The method further includes determining a position of an interaction of the charge distribution with the plurality of pixels based on the obtained charge information.

Abstract: A radiation detection apparatus to detect radiation. A substrate (1) has a conversion element on a first surface. The conversion element is configured to convert radiation into electric charges. A readout circuit is connected to a first region. The first region includes a first edge of the first surface. A driving circuit is connected to a second region other than the first region. The second region includes a second edge of the first surface. A light source (4) is arranged on a second surface side which faces the first surface. The light source (4) is arranged so as to face any regions of the second surface side except the first region.

Abstract: Methods and apparatus are described for space charge dosimeters for extremely low power measurements of radiation in shipping containers. A method includes insitu polling a suite of passive integrating ionizing radiation sensors including reading-out dosimetric data from a first passive integrating ionizing radiation sensor and a second passive integrating ionizing radiation sensor, where the first passive integrating ionizing radiation sensor and the second passive integrating ionizing radiation sensor remain situated where the dosimetric data was integrated while reading-out.

Abstract: Methods and apparatus are described for space charge dosimeters for extremely low power measurements of radiation in shipping containers. A method includes in situ polling a suite of passive integrating ionizing radiation sensors including reading-out dosimetric data from a first passive integrating ionizing radiation sensor and a second passive integrating ionizing radiation sensor, where the first passive integrating ionizing radiation sensor and the second passive integrating ionizing radiation sensor remain situated where the dosimetric data was integrated while reading-out.

Abstract: Neutron detection cells and corresponding methods of detecting charged particles that make efficient use of silicon area are set forth. Three types of circuit cells/arrays are described: state latching circuits, glitch generating cells, and charge loss circuits. An array of these cells, used in conjunction with a neutron conversion film, increases the area that is sensitive to a strike by a charged particle over that of an array of SRAM cells. The result is a neutron detection cell that uses less power, costs less, and is more suitable for mass production.

Abstract: Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.

Abstract: A radiation detector is disclosed. The detector has an entrance opening etched through a low-resistivity volume of silicon, a sensitive volume of high-resistivity silicon for converting the radiation particles into detectable charges, and a passivation layer between the low and high-resistivity silicon layers. The detector also has electrodes built in the form of vertical channels for collecting the charges generated in the sensitive volume, and read-out electronics for generating signals based on the collected charges.

Abstract: A substrate for forming a semiconductor layer includes a plurality of linear convexes or grooves on a surface of the substrate by crystal growth. The plurality of linear convexes or grooves are formed along a direction of a cleavage plane of the semiconductor layer.

Abstract: A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.

Abstract: A method for determining parameters of a beam is disclosed. As a part of a disclosed method, a beam is received at an image detection array where charges are generated and collected, at a plurality of pixels. Values associated with at least one of a plurality of parameters of the beam are determined by integrating information supplied from each of the pixels. Feedback is generated that represents the values.

Abstract: A radiation detector includes a semiconductor crystal having a first surface and a second surface opposite to the first surface, a first electrode electrically coupled with the first surface of the semiconductor crystal to allow current to flow between the first electrode and the crystal, and an insulating layer on the first surface and between the semiconductor crystal and the first electrode so as to create a partially transmissive electrical barrier between the first electrode and the crystal. The insulating layer has a thickness ranging from about 50 nanometers to about 500 nanometers.

Abstract: A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (?(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (?(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).

Abstract: In a radiation detecting apparatus of the invention, plural pixels are arranged, and the pixel has a conversion element converting a radiation into an electric signal and a switching element connected to the conversion element. The conversion element includes a first electrode disposed on a first surface of an insulating substrate, a second electrode disposed on the first electrode, and a semiconductor layer disposed between the first electrode and the second electrode. The first electrode is made of a light-transmitting conductive material which transmits light emitted from a light source, and the first electrode is formed form a light transmitting electroconductive material transmitting light emitted form a light source disposed on a second surface of the insulating substrate opposite to the first surface. The switching element has a light shielding member which prevents incidence of the light from the light source to the switching element.

Abstract: The invention relates to a device for detecting electromagnetic radiation, in particular ionizing radiation, consisting of an assembly of juxtaposed parallelepipedic semiconductor detection blocks (1001, . . . 100m), each detection block the assembly being provided in such a way as to reduce the detection dead zone.

Abstract: To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus including: a plurality of pixels arranged on a substrate in row and column directions, each pixel having a conversion element and a transfer switching element; a drive wiring connected to a plurality of the transfer switching elements in the row direction; and a conversion element wiring connected to a plurality of the conversion elements in the row direction, wherein a reset switching element is disposed between the conversion element wiring and a reset wiring for supplying a reset voltage for resetting the conversion element, and a bias switching element is disposed between the conversion element wiring and a bias wiring for supplying a bias voltage for operating the conversion element.

Abstract: The invention relates to a semiconductor detector, in particular a pnCCD detector, for radiation detection, including a guard ring (12, 14) and a readout anode (3, 4) arranged inside the guard ring (12, 14) for reading out radiation-generated signal charge carriers (e?), and also including a clearing contact (9) arranged outside the guard ring (12, 14) for removing the collected signal charge carriers (e?) from the readout anode (3, 4). According to the invention, the semiconductor detector furthermore includes a gap (15, 16) in the guard ring (12, 14) and also a controllable gate (17, 18) which is arranged over the gap (15, 16) in the guard ring (12, 14) and makes the gap (15, 16) in the guard ring (12, 14) permeable or impermeable to the signal charge carriers (e?) to be removed, depending on an electrical actuation of the gate (17, 18).

Abstract: An intermediate layer is located between a recording photoconductive layer and an electrode, which is either one of a bias electrode and a reference electrode, and which is located on the side at positive electric potential with respect to a charge accumulating section at the time of readout of electric charges of the charge accumulating section. The intermediate layer is an a-Se layer containing, as a specific substance, at least one kind of substance selected from the group consisting of an alkali metal fluoride, an alkaline earth metal fluoride, an alkali metal oxide, an alkaline earth metal oxide, SiOx, and GeOx, where x represents a number satisfying 0.5?x?1.5, in a concentration falling within the range of 0.003 mol % to 0.03 mol %.

Abstract: Detector for detection of particle radiation, particularly particle radiation having an energy in the range of 150 eV to 300 keV, comprising at least one detector element, said detector element comprising a semiconductor detector material, at least a set of line-shaped electrodes conductively connected to at least one surface of said semiconductor detector material, each set comprising a plurality of line-shaped electrodes extending in parallel, and signal processor communicating with said line-shaped electrodes, wherein, in each set, said line-shaped electrodes are distributed with a strip pitch of less than 3 ?m, and that the thickness of said semiconductor detector material is of less than two times the strip pitch of said line-shaped electrodes.

Abstract: The object of the invention is a detector (20) of radon and its daughter products that are present in the ambient air, including in particular aerosols, characterized in that it comprises: A silicon pellet that integrates a PN junction with a deserted zone, designed to emit signals under the action of the radiation that is emitted by said radon and said daughter products, A passivation layer (22) that covers this silicon pellet and that makes it possible for the detector to work in the open air, and A conductive layer (24) that covers the passivation layer and that forms an electrode for collecting radionuclides. The invention also covers the detection device that includes said detector.

Abstract: A semiconductor radiation detector device comprises a conductive backside layer (102) of first conductivity type and a bulk layer (103). Opposite to the conductive backside layer (102) there are a modified internal gate layer (104) of second conductivity type, a barrier layer (105) of the first conductivity type and pixel dopings (110, 112, 506, 510, 512) of the second conductivity type. The pixel dopings are adapted to be coupled to a pixel voltage, which is defined as a potential difference to a potential of the conductive backside layer (102), and which creates potential minima inside the detector material for trapping the signal charges.

Abstract: An x-ray detector module comprises a plurality of silicon drift detector cells arranged next to each other on a sensor chip. The sensor chip is arranged in a recess of a frame-shaped base support, such that the sensitive chip surface lies in the opening of the frame-shaped base support. A mask (10) is fixed to the side of the base support (2) opposite to the recess and covers the outer edge areas of external detector cells and ridges above the sensor chip (8) protrude into the opening of the base support (2). The ridges are arranged in such a manner that they cover the defining strips which are adjacent to the detector cells, in order to protect the external edge areas and the defining strips which are covered by the mask (10) counter to the incident x-ray photons.

Abstract: A radiation detecting apparatus according to the present invention includes: pixels including switching elements arranged on an insulating substrate and conversion elements arranged on the switching elements to convert a radiation into electric carriers, the switching elements and the conversion elements are connected with each other, the pixels two-dimensionally arranged on the insulating substrate in a matrix; gate wiring commonly connected with a plurality of switching elements arranged in a row direction on the insulating substrate; signal wiring commonly connected with a plurality of switching elements arranged in a column direction; and a plurality of insulating films arranged between the switching elements and the conversion elements, wherein at least one of the gate wiring and the signal wiring is arranged to be put between the plurality of insulating films.

Abstract: The invention relates to a radiation detector that comprises a converter element and a plurality of electrode systems arranged on said element, wherein each electrode system comprises a primary electrode and a supplementary electrode, which are connected to a readout circuitry. The primary and the supplementary electrodes may particularly be realized by planar, parallel stripes extending in a common plane, wherein said stripes are electrically connected above said plane.

Abstract: The present invention provides a radiation detector that can suppress a deterioration of image quality of a radiation image while suppressing the size of the radiation detector. Namely, a conductive layer configured by a conductive member is disposed at a portion that corresponds to at least the back side of the peripheral edge portion of a bias electrode, on the surface of an insulating substrate.

Abstract: A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first electrode layer, an insulating layer for inhibiting carriers from transferring, a photoelectric converting semiconductor layer of a non-single-crystal type, an injection blocking layer for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer are laminated in this order on an insulating substrate.