Abstract: A radiation therapy system includes an accelerator and beam transport system that generates a beam of particles. The accelerator and beam transport system guides the beam on a path and into a nozzle that can aim the beam toward an object. The nozzle includes a beam energy adjuster that can adjust the beam by, for example, placing different thicknesses of material in the path of the beam to affect the energies of the particles in the beam to deliver a dose to the object with a Spread Out Bragg Peak.

Abstract: Complex and fine patterns may be formed by an exposure apparatus that decreases movement error of a stage including a beam generating section that generates a charged particle beam, a stage section that has a sample mounted thereon and moves the sample relative to the beam generating section, a detecting section that detects a position of the stage section, a predicting section that generates a predicted drive amount obtained by predicting a drive amount of the stage section based on a detected position of the stage section, and an irradiation control section that performs irradiation control for irradiating the sample with the charged particle beam, based on the predicted drive amount.

Abstract: A charged particle beam writing apparatus according to one aspect of the present invention includes an emission unit to emit a charged particle beam, an electron lens to converge the charged particle beam, a blanking deflector, arranged backward of the electron lens with respect to a direction of an optical axis, to deflect the charged particle beam in the case of performing a blanking control of switching between beam-on and beam-off, a blanking aperture member, arranged backward of the blanking deflector with respect to the direction of the optical axis, to block the charged particle beam having been deflected to be in a beam-off state, and a magnet coil, arranged in a center height position of the blanking deflector, to deflect the charged particle beam.

Abstract: The invention provides an exposure apparatus (100) including a formation module (122) which forms charged particle beams with different irradiation positions on a specimen.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a stage provided in a chamber, and a conveying module configured to convey a plurality of wafers into the chamber and to set the plurality of wafers on the stage. The apparatus further includes a controller configured to divide treatment time for simultaneously treating the plurality of wafers on the stage into first to K-th treatment periods where K is an integer of two or more, and to change positions of one or more of the plurality of wafers on the stage by the conveying module according to the treatment periods.

Abstract: A field emission device comprises one or more emitter elements, each having a high aspect ratio structure with a nanometer scaled cross section; and one or more segmented electrodes, each surrounding one of the one or more emitters. Each of the one or more segmented electrodes has multiple electrode plates. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: The present disclosure relates to an accessory holder attachable to or integrated in the nozzle of an apparatus for particle beam irradiation treatment. The accessory may be an aperture piece, a range shifter or any other element that can be placed in the beam path between the outer end of the nozzle and the irradiated target. The accessory holder may be equipped with first displacement means for moving the accessory away from or towards the nozzle, thereby moving the accessory forwards and backwards in the direction of the beam and second displacement means for moving the accessory into or out of the beam path. Measurements or treatment steps may be performed with and without the accessory in the beam path, without interrupting the treatment.

Abstract: Methods of decreasing the dose per pulse implanted into a workpiece disposed in a process chamber are disclosed. According to one embodiment, the plasma is generated by a RF power supply. This RF power supply may have two different modes, a first, referred to as continuous wave mode, where the RF power supply is continuously outputting a voltage. This mode allows creation of the plasma within the process chamber. During the second mode, referred to as pulsed plasma mode, the RF power supply outputs two different power levels. The platen bias voltage may be a more negative value when the lower RF power level is being applied. This pulsed (or multi-setpoint) plasma also assists in reducing dopant deposition on the wafer during the time when CW plasma is on but the bias voltage pulse is in the off-state. In a further embodiment, a delay is introduced between the transition to the pulsed plasma mode and the initiation of the implanting process.

Abstract: In one embodiment, a charged particle beam drawing apparatus includes a drawing unit that draws a pattern in a drawing area on a substrate and a control processing circuitry that controls the drawing unit via a process including receiving drawing data with a hierarchical correction map input to the control processing circuitry. The drawing data with the hierarchical map includes a plurality of files in which division maps are respectively described in files in units of subframes. Each division map includes dose correction information associated with corresponding one of blocks of the drawing area. The process further includes generating shot data by performing a data conversion process on the drawing data, reading a division map corresponding to a block in the area to be drawn from the hierarchical correction map, calculating a dose, and controlling the drawing unit based on the shot data and the calculated dose.

Abstract: The present invention relates to an electronic device comprising a capacitive fingerprint sensor having a fingerprint sensing surface forming part of an exterior surface of the electronic device; a protective film arranged on the exterior surface of the electronic device comprising the fingerprint sensing surface; wherein the protective film is arranged to at least partially cover the fingerprint sensing surface; and wherein the protective film comprises an electrically conductive pattern covering the fingerprint sensing surface, the electrically conductive pattern being configured to enable verification of a functionality of the fingerprint sensor. The invention also relates to a method of manufacturing an electronic device comprising a fingerprint sensor, and to a method of verifying a functionality of a fingerprint sensor.

Abstract: An ion implantation apparatus includes an implantation part, a measuring part, and a controller. The ion implantation part implants ions into an implantation region located at a bottom of a concave portion provided on a semiconductor substrate. The measuring part measures an implantation amount of ions corresponding to an aspect ratio of the concave portion based on ions implanted from the implantation part thereinto, at a first position at which the semiconductor substrate is arranged when the ions are implanted into the implantation region or a second position close to the first position. The controller controls the implantation part to stop implantation of the ions into the measuring part when an accumulated amount of the implantation amount has reached a predetermined amount according to a target accumulation amount of the implantation region.

Abstract: A method of manufacturing a coated structure on a substrate includes positioning a substrate in a vapor deposition chamber having a crucible with source material. The method includes evaporating the source material with electron beams from an irradiation source, the evaporated source material being deposited on the substrate as a coating layer. The method includes ablating the coating layer with the electron beams to selectively remove portions of the coating layer leaving a circuit structure on the substrate. The evaporating and ablating are accomplished in situ within the vapor deposition chamber using the same irradiation source.

Abstract: An electrostatic multipole device for influencing a charged particle beam propagating along an optical axis is described. The electrostatic multipole device comprises a substrate with at least one aperture opening for the charged particle beam, which extends along the optical axis through the substrate, and four or more electrodes which are formed on a first main surface of the substrate to influence the charged particle beam propagating through the aperture opening, wherein each of the four or more electrodes is arranged at a radial distance from a beam limiting edge of the aperture opening. Further, a method of manufacturing an electrostatic multipole device is described.

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

Abstract: An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.

Abstract: The subject matter of the present invention is a method for treating pourable products made of particles which can be separated, preferably seeds (2), with accelerated electrons. During the method, a transparent product flow is guided, using gravity, in a product guiding channel (1) through the electron field generated by at least one electron accelerator (12) under low pressure or excess pressure. The product flow is guided by means of an accelerated gas flow (5) in such a way that the movement thereof corresponds in magnitude and direction to the accelerated movement, which the falling particles execute in said gas flow due to gravitational acceleration. In addition, a device is disclosed which realizes the acceleration of the gas flow (5) in the required way through the shaping of the product guiding channel (1).

Abstract: The invention relates to a method and apparatus of control and/or determination of energy and/or velocity of a beam of a charged particles extracted from a synchrotron, the synchrotron using a radio frequency field to redirect the charged particles through an extraction material. The method and apparatus for extracting a group of charged particles at a known and controlled energy is optionally used in conjunction with any apparatus and/or technique coupled to a synchrotron, such as a charged particle cancer therapy system. For example, the knowledge/control of the charged particle beam delivery energy is used in conjunction with a multi-axes and/or a multi-field tumor irradiation system in combination with a tumor treatment plan to accurately ablate or irradiate a tumor.

Abstract: After formation of trench capacitors and source and drain regions and gate structures for access transistors, a dielectric spacer is formed on a first sidewall of each source region, while a second sidewall of each source region and sidewalls of drain regions are physically exposed. Each dielectric spacer can be employed as an etch mask during removal of trench top dielectric portions to form strap cavities for forming strap structures. Optionally, selective deposition of a semiconductor material can be performed to form raised source and drain regions. In this case, the raised source regions grow only from the first sidewalls and do not grow from the second sidewalls. The raised source regions can be employed as a part of an etch mask during formation of the strap cavities. The strap structures are formed as self-aligned structures that are electrically isolated from adjacent access transistors by the dielectric spacers.

Abstract: One embodiment relates to an apparatus for electron beam lithography. The apparatus includes an array of cold cathode electron sources for generating an array of electron beams, and driver circuitry underlying the array of electron sources. The driver circuitry is configured to selectively blank individual electron beams so as to create a patterned array of electron beams. The apparatus further includes an imaging system configured to focus and demagnify the patterned array of electron beams and a movable stage for holding a target substrate. The movable stage is configured to translate the target substrate under the patterned array of electron beams. A computer may be configured to send drive signals to the driver circuitry to cause a pattern to be written onto the target substrate to roll across the array in synchronization with the translation of the target substrate. Other embodiments, aspects and feature are also disclosed.

Abstract: A hadron radiation installation adapted to subject a target to irradiation by a hadron radiation beam includes a target support configured to support, preferably immobilize, a target; a hadron radiation apparatus adapted to emit a hadron radiation beam along a beam axis to irradiate the target supported by the target support, the radiation beam penetrating into the target. The radiation apparatus has a control system at least comprising a beam penetration depth control allowing at least to control and vary the penetration depth of the radiation beam into the target. The installation has a radiation beam range sensor device adapted to determine the penetration depth of said radiation beam into the target, where the range sensor device includes a gamma camera responsive to prompt gamma rays that are emitted while the hadron radiation beam penetrates into the target.

Abstract: Provided herein are approaches for controlling an ion beam within an accelerator/decelerator. In an exemplary approach, an ion implantation system includes an ion source for generating an ion beam, and a terminal suppression electrode coupled to a terminal, wherein the terminal suppression electrode is configured to conduct the ion beam through an aperture of the terminal suppression electrode and to apply a first potential to the ion beam from a first voltage supply. The system further includes a lens coupled to the terminal and disposed adjacent the terminal suppression electrode, wherein the lens is configured to conduct the ion beam through an aperture of the lens and to apply a second potential to the ion beam from a second voltage supply. In an exemplary approach, the lens is electrically insulated from the terminal suppression electrode and independently driven, thus allowing for an increased beam current operation range.

Abstract: The present invention provides a method for optimizing a shaped working beam having a sharp edge for making sufficiently precise cuts and a high beam current for faster processing. An ion beam is directed along an optical column through a reference aperture to form a reference beam that has a preferred shape and an associated reference current. The reference beam is optimized using selected parameters of the optical components within the optical column. The ion beam is then directed through a working aperture to form a working beam for use in a processing application. The working beam has a different shape from the reference beam and an associated working current that is higher than the reference current. The reference aperture and working aperture have at least one corresponding dimension. The working beam is then optimized using the selected optical component parameters used to align and focus the reference beam.

Abstract: A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system (311) for projecting a plurality of charged particle beamlets (7) onto the surface of the substrate; a chuck (313) moveable with respect to the projection system; a beamlet measurement sensor (i.a. 505, 511) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface (501) for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (610, 620, 635), the position mark measurement system comprising an alignment sensor (361, 362). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion (460) for accommodating the surface of the beamlet measurement sensor, and a position mark portion (470) for accommodating the position mark.

Abstract: A focused ion beam system is offered which can make a focal adjustment without relying on the structure of a sample while suppressing damage to the sample to a minimum. Also, a method of making this focal adjustment is offered. The focused ion beam system has an ion source for producing an ion beam, a lens system for focusing the beam onto the sample, a detector for detecting secondary electrons emanating from the sample, and a controller for controlling the lens system. The controller is operative to provide control such that the sample is irradiated with the ion beam without scanning the beam and that a focus of the ion beam is varied by varying the intensity of the objective lens during the ion beam irradiation. Also, the controller measures the intensity of a signal indicating secondary electrons emanating from the sample while the intensity of the objective lens is being varied.

Abstract: An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.

Abstract: A multipole device for influencing a charged particle beam propagating along an optical axis is described. The multipole device includes: an electrostatic deflector with at least two deflector electrodes for deflecting the charged particle beam by a deflection angle, wherein the deflector electrodes extend over a first length along the optical axis; and an electrostatic corrector comprising at least four corrector electrodes to compensate for an aberration of the charged particle beam, wherein the corrector electrodes extend over a second length along the optical axis, which is shorter than the first length.

Abstract: An electrostatic multipole device for influencing a charged particle beam propagating along an optical axis is described. The multipole device includes a first electrical contact, a second electrical contact, and a high-resistance layer which extends at least partially around the optical axis and is configured to allow a current flow between the first electrical contact and the second electrical contact, wherein the first electrical contact contacts the high-resistance layer at a first circumferential position and is configured to provide a first potential to the first circumferential position, and wherein the second electrical contact contacts the high-resistance layer at a second circumferential position at an angular distance from the first circumferential position and is configured to provide a second potential to the second circumferential position. Further, an electrostatic multipole arrangement including two or more such multipole devices and a charged particle beam device are described.

Abstract: A surface treatment apparatus, disposed around a conveying device conveying a substrate in a predetermined conveying direction, includes: first and second liquid nozzles, disposed at an adjustable angle above the conveying device, each having an axial direction perpendicular to an axial direction of the conveying device, in which the second liquid nozzle is spaced apart from the first liquid nozzle by a first predetermined distance in the predetermined conveying direction, and the first and second liquid nozzles incline at a first angle facing each other; and first and second liquid level baffles, disposed on two sides of the conveying device respectively and spaced apart from the conveying device by a gap, in which the first and second liquid level baffles are located within the first predetermined distance spaced apart between the first and second liquid nozzles.

Abstract: At least one drawing apparatus according to an exemplary embodiment includes a plurality of optical systems and repeats an operation to draw a pattern on a substrate while partly overlapping stripe-shaped regions drawn by the optical systems. The drawing apparatus includes a creation unit configured to create data to be supplied to each of the plurality of optical systems by using a plurality of sub pattern data, each of the plurality of sub pattern data serving as unit data of pattern data used by the plurality of optical systems, corresponding to a region having a width obtainable by dividing the stripe-shaped regions in a drawing width direction, and including information relating to continuity of drawing instruction data and exposure amount information. The creation unit is configured to create the data by changing exposure amount information corresponding to an overlapping drawing region based on the information relating to the continuity.

Abstract: At least one method of manufacturing articles and at least one lithography system are provided herein. A lithography system according to an exemplary embodiment of the present disclosure includes a drawing apparatus that includes a plurality of optical systems and draws a pattern on a substrate with beams having been respectively shaped by the plurality of optical systems, and a transmission unit configured to select pattern data to be used by the drawing apparatus from a plurality of types of pattern data commonly used by the plurality of optical systems and configured to transmit the selected pattern data to the drawing apparatus. The pattern data is a set of data including a plurality of sub pattern data, and a width of a stripe-shaped drawing region corresponding to one sub pattern data piece is equivalent to a length obtainable by dividing a drawing width of the beams by an integer value.

Abstract: The system for drawing a pattern on a resist layer covering a semiconductor wafer, comprising an electron gun housing unit provided with a plurality of small-sized electron guns (wherein the housing unit has a hollow column section for releasing an electron beam, and a micro deflection unit is disposed inside for adjusting the inclination of the electron beam), a movable stage capable of moving in the X-Y directions, a wafer stage disposed on the movable stage to support a semiconductor wafer, a mask wafer having struts on its rear side for supporting membranes on which a pattern to be transferred is formed, a mask stage for holding the mask wafer, a matching detection unit for detecting a misalignment between the mask wafer and the semiconductor wafer, and an inclination means connected to the micro deflection unit and the matching detection unit for inclining the electron beam.

Abstract: In one embodiment, a blanking aperture array includes a substrate including an upper surface on which an insulating film is provided, a plurality of blanking aperture portions provided in the substrate, each of the plurality of blanking aperture portions including one of penetration holes, through which a predetermined beam passes, and one of blanking electrodes and one of ground electrodes which are provided on the insulating film, and the blanking electrodes and the ground electrodes configured to perform blanking deflection of the predetermined beam, and a high-resistivity film provided so as to cover the insulating film and at least part of the ground electrodes, the high-resistivity film having an electric resistance that is higher than an electric resistance of the ground electrodes and lower than an electric resistance of the insulating film.

Abstract: A method for correcting a drift of an accelerating voltage includes measuring, after a position of a focus of a charged particle beam has been adjusted based on a first adjustment value and a predetermined time period has passed, a second adjustment value when the position of the focus of the charged particle beam is newly adjusted, calculating a deviation amount between the first adjustment value and the second adjustment value, calculating, using a correlation stored in a storage device, a correction value of an accelerating voltage to be applied to a beam source which emits the charged particle beam, where the correction value corresponds to the deviation amount, and correcting the accelerating voltage to be applied to the beam source, by using the correlation value.

Abstract: A patient positioning/constraint apparatus and method of use thereof is described in combination with a charged particle cancer therapy system. In one embodiment, a patient is tilted about a longitudinal axis, such as rotation about a head-to-foot axis of the patient where the head-to-foot axis of the patient is horizontal. Optional side support constraints are optionally used to constrain radial movement of the patient on the tilted patient support. The side support constraints are optionally pre-formed to or coupled to a radially outer shape of an individual patient, such as the dexter or sinister side of the individual's head, arm, torso, hip, and/or leg. Patient tilt is optionally combined with rotation of the patient about a vertical axis, rotation of the entire patient about an axis not overlapped by the patient, and/or dynamic control of angles of incident charged particles directed by beamline magnets of the charged particle therapy system.

Abstract: In one aspect, an ion implantation system is disclosed, which comprises a deceleration system configured to receive an ion beam and decelerate the ion beam at a deceleration ratio of at least 2, and an electrostatic bend disposed downstream of the deceleration system for causing a deflection of the ion beam. The electrostatic bend includes three tandem electrode pairs for receiving the decelerated beam, where each electrode pair has an inner and an outer electrode spaced apart to allow passage of the ion beam therethrough. Each of the electrodes of the end electrode pair is held at an electric potential less than an electric potential at which any of the electrodes of the middle electrode pair is held and the electrodes of the first electrode pair are held at a lower electric potential relative to the electrodes of the middle electrode pair.

Abstract: A deposition device that deposits material particles includes an ionization section that ionizes the material particles utilizing a photoelectric effect in a reaction chamber to which the material particles are supplied, and an electrode section that guides the ionized material particles to a given area utilizing a Coulomb force.

Abstract: A hard disk drive memory which stores pattern data of a high-frequency to be applied for each combination of energy and intensity of the generated particle beam and a local memory, which reads a plurality of pattern data of a high-frequency for each patient together with a sequential order of changing energy and intensity from the hard disk drive memory and stores data in order to perform a scanning irradiation method in which a layered particle beam irradiation region in a depth direction of an affected part of the patient is formed sequentially by changing energy and intensity of the particle beam sequentially to irradiate an affected part of a patient which is an irradiation subject with the particle beam, and which reads out data faster than the hard disk drive memory are provided.

Abstract: A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.

Abstract: A current regulation method of multiple beams includes acquiring a current density distribution; selecting at least one beam whose current density is equal to or more than a threshold; measuring a current value of the at least one beam respectively by varying a voltage applied to the Wehnelt electrode and acquiring a correlation between the voltage and the current value; moving a stage to a position where the at least one beam is allowed to enter a current detector each time writing of a stripe region is completed; measuring, after moving the stage, a current value of the at least one beam while beams of the multiple beams whose current density is less than the threshold are blocked; operating a target voltage value applied to the Wehnelt electrode to cause the current value measured to be a target current value; and applying the target voltage value to the Wehnelt electrode.

Abstract: An electron beam drawing apparatus includes: an accepting unit that accepts input graphic information, which is information representing at least one graphic; a graphic width acquiring unit that acquires a width of each of the at least one graphic represented by the input graphic information; a generating unit that generates approximate graphic information representing at least one approximate graphic, which is a graphic configured by at least one rectangle matching the width of the graphic, and is a graphic that approximates each of the at least one graphic represented by the input graphic information; and a drawing unit that draws the at least one approximate graphic represented by the approximate graphic information generated by the generating unit.

Abstract: The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner. Apertures may be formed in each electrode after the electrodes are secured together, thereby ensuring that the apertures are well-aligned between neighboring electrodes. In some cases, the electrodes are made from degeneratively doped silicon, and the electrode assembly is secured together through electrostatic bonding. Other electrode materials and methods of securing may also be used. The electrode assembly may include a hollow cathode emitter electrode in some cases, which may have a frustoconical or other non-cylindrical aperture shape. A chamber liner and/or reflector may also be present in some cases.

Abstract: The disclosed embodiments relate to ion delivery mechanisms, e.g., for fusion power. Particularly, some embodiments relate to systems and methods for delivering ions to a fuel source in such a manner to initiate fast ignition. The ions may be accumulated into “microbunches” and delivered to the fuel with considerable energy and velocity. The impact may compress the fuel while delivering sufficient energy to begin the fusion reaction.

Abstract: A charged-particle beam lithographic system (100) delineates a pattern on a substrate (2) by directing a charged-particle beam (L) at the substrate. The system (100) includes a substrate stage (10) on which the substrate (2) is disposed and a substrate cover (20). The cover (20) has a frame portion (22) that covers an outer peripheral portion of the substrate (2) as viewed within a plane. The frame portion (22) has a first part (22a) disposed on the stage (10) and a second part (22b) capable of being loaded and unloaded on and from the stage (10) by a transport portion (40). When the second part (22b) is loaded on the stage (10), it is electrically grounded.

Abstract: The invention relates to an electrode stack (70) comprising stacked electrodes (71-80) for manipulating a charged particle beam along an optical axis (A). Each electrode comprises an electrode body with an aperture for the charged particle beam. The electrode bodies are mutually spaced and the electrode apertures are coaxially aligned along the optical axis. The electrode stack comprises electrically insulating spacing structures (89) between each pair of adjacent electrodes for positioning the electrodes (71-80) at predetermined mutual distances along the axial direction (Z). A first electrode and a second electrode each comprise an electrode body with one or more support portions (86), wherein each support portion is configured to accommodate at least one spacing structure (89). The electrode stack has at least one clamping member (91-91c) configured to hold the support portions (86) of the first and second electrodes, as well as the intermediate spacing structure (89) together.

Abstract: The present disclosure provides for many different embodiments of a charged particle beam data storage system and method. In an example, a method includes dividing a design layout into a plurality of units; creating a lookup table that maps each of the plurality of units to its position within the design layout and a data set, wherein the lookup table associates any repeating units in the plurality of units to a same data set; and exposing an energy sensitive layer to a charged particle beam based on the lookup table.

Abstract: An electron beam writing apparatus includes an electron gun system to emit an electron beam, a height adjustment unit, arranged at the downstream side compared to the electron gun system with respect to the optical axis direction, to variably adjust a height position of the electron gun system, an electron lens, arranged at the downstream side compared to the height adjustment unit with respect to the optical axis direction, to converge the electron beam, a lens control unit to control, for each variably adjusted and changed height position of the electron gun system, the electron lens such that the electron beam forms a crossover at a predetermined position, and an objective lens, arranged at the downstream side compared to the electron lens with respect to the optical axis direction, to focus the electron beam having passed the electron lens.

Abstract: On a plane of a semiconductor wafer, two types of in-plane regions comprising full-width non-ion-implantation regions and partial ion implantation regions, which are alternately arranged one or more times in a direction orthogonal to a scanning direction of an ion beam are created. During the creation of the partial ion implantation regions, reciprocating scanning using the ion beam can be repeated until the target dose can be satisfied while performing or stopping ion beam radiation onto the semiconductor wafer in a state in which the semiconductor wafer can be fixed. During the creation of the full-width non-ion-implantation regions, the semiconductor wafer can be moved without performing the ion beam radiation onto the semiconductor wafer. Then, by repeating fixing and movement of the semiconductor wafer plural times, ion implantation regions and non-ion-implantation regions are created in desired regions of the semiconductor wafer.

Abstract: A multi charged particle beam writing apparatus includes a divided shot data generation unit to generate, for each shot of multi beams of charged particle beams, data for plural times of divided shots such that irradiation for one shot of each beam is divided into plural times of divided shots each having a different irradiation time, an individual blanking system to provide blanking control individually for each of multi beams, based on the data for plural times of divided shots, an elastic rate correction value acquisition unit to acquire, for each of plural times of divided shots, an elastic rate correction value for correcting an elastic rate of an image of the whole multi beams, depending upon the number of ON-beams of the multi beams, and a lens to correct, for each divided shot, the elastic rate of the image of the whole multi beams by using the correction value.

Abstract: Alignment techniques are described that automatically align multiple scans of an object obtained from different perspectives. Instead of relying solely on errors in local feature matching between a pair of scans to identify a best possible alignment, additional alignment possibilities may be considered. Grouped keypoint features of the pair of scans may be compared to keypoint features of an additional scan to determine an error between the respective keypoint features. Various alignment techniques may utilize the error to determine an optimal alignment for the scans.

Abstract: A charged hadron therapy system for delivering charged hadron radiation to a target is provided. The system comprises a target positioning couch for supporting the target being moveable along a translation direction and a beam delivery system comprising a beam scanning means for scanning a hadron pencil beam over said target in a first scanning direction and a second scanning direction being substantially parallel with the translation direction. The beam scanning means is limited for providing a maximum scanning amplitude AY in the second scanning direction. The system comprises an irradiation controller configured for simultaneously and synchronously performing the moving of the couch and the scanning, so as to deliver charged hadron radiation to a target over a target size being larger in the Y direction than the maximum scanning amplitude AY.