Abstract: A rotating irradiation apparatus includes a rotating gantry 3 including a front ring 19 and a rear ring 20 and is provided with a beam delivery device 11 and an irradiation device 4. The beam delivery device 11 delivers an ion beam used for particle radiotherapy. Radial support devices 61A and 61B support the front ring 19 and radial support devices 61A and 61B support the rear ring 20. Each radial support device includes a linear guide 41, an upper support structure disposed above the linear guide 41, and a lower support structure disposed below the linear guide 41. The upper support structure is movably mounted on the lower support structure and is movable in the direction of the rotational axis of the rotating gantry 3.

Abstract: System and method of gas-cluster ion beam processing is realized by incorporating improved beam and workpiece neutralizing components. Larger GCIB current transport is enabled by low energy electron neutralization of space charge of the GCIB. The larger currents transport greater quantities of gas in the GCIB. A vented faraday cup beam measurement system maintains beam dosimetry accuracy despite the high gas transport load.

Abstract: An EUV lithographic apparatus includes an EUV radiation source, an optical element and a cleaning device. The cleaning device includes a hydrogen radical source and a flow tube in communication with the hydrogen radical source. The cleaning device is configured to provide a flow of hydrogen radicals and the flow tube is arranged to provide a hydrogen radical flow at a predetermined position within the lithographic apparatus, for example for cleaning a collector mirror.

Abstract: An electron beam writing method is disclosed, which includes preparing electron beam writing data structured from writing pattern data expressed by both data of VSB shots which are units of shaping beams at the time of carrying out writing a pattern and data of CP shots serving as bases of a repeating pattern, and CP aperture data into which identification numbers IDs and opening positions of respective openings of a CP aperture having openings for VSB shots and openings for CP shots are described, inputting the electron beam writing data to an electron beam writing apparatus, and expanding the electron beam writing data into data of the respective shots defined in the electron beam writing data, determining irradiation times of the respective expanded shots while correcting shot positions, and outputting control signals corresponding to shot data to repeat a shot of a desired pattern, by the electron beam writing apparatus.

Abstract: A exposure apparatus includes a charged beam radiating unit configured to radiate a charged beam, a shaping unit including an opening for shaping the beam, a storage unit to store a history of data concerning a beam area of the beam on the shaping unit, a predicting unit to predict change amount of dimensions of the beam passing through the opening to design dimensions of the opening, the predicting the change amount being carried out based on a relation between the beam area previously prepared and change amount of the dimensions of the beam passing through the opening to the design dimensions of the opening, and a correcting unit to correct dimension of a pattern which corresponds to the beam and is to be formed on the sample based on the change amount predicted by the predicting unit.

Abstract: In a pattern definition device for use in a particle-beam exposure apparatus a plurality of blanking openings (910) are arranged within a pattern definition field (bf) composed of a plurality of staggered lines (bl) of blanking openings, each provided with a deflection means controllable by a blanking signal (911); for the lines of blanking openings, according to a partition of the blanking openings of a line into several groups (g4,g5,g6), the deflection means of the blanking openings of each group are fed a common group blanking signal (911), and the group blanking signal of each group of a line is fed to the blanking means and connected to the respective blanking openings independently of the group blanking signals of the other groups of the same line.

Abstract: A method and apparatus for correcting drift of the beam irradiation position during automated FIB (focused ion beam) processing with a reference image-setting unit, an image read-in unit for reading in images of the reference image region during the FIB processing, an arithmetic-and-control unit for finding the direction and amount of image deviation between the subsequent images, and a beam deflection system-adjusting unit for correcting the beam deflection system by correcting the image deviation based on the deviation in response to the output from the arithmetic-and-control unit. The arithmetic-and-control unit optimizes the brightness or contrast of the reference image.

Abstract: One embodiment relates to a dynamic pattern generator for controllably reflecting charged particles. The generator includes at least a controllable light emitter array, an optical lens, and an array of light-sensitive devices. The controllable light emitter array is configured to emit a pattern of light. The optical lens is configured to demagnify the pattern of light. The array of light-sensitive devices is configured to receive the demagnified pattern of light and to produce a corresponding pattern of surface voltages. Other embodiments and features are also disclosed.

Abstract: An irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a deflector for scanning which swings the beam reciprocally, a beam parallelizing device, an acceleration/deceleration device, and an energy filtering device. According to this invention, a hybrid angular energy filter generating both electric and magnetic fields to bend trajectories is provided as the energy filtering device. A pair of multi-surface energy slit units each having a plurality of energy slits that are switchable therebetween depending on an ion species for irradiation are further provided on a downstream side of the hybrid angular energy filter. It is possible to selectively irradiate a target wafer with high-current beams from low energy to high energy in the conditions where contamination such as neutral particles, different kinds of dopants, ions with different energies, metal, and dust particles is extremely small in amount.

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.

Abstract: This VSB lithography system includes a first, second and third aperture for forming a single electron beam in each of the rectangular opening portion that are provided, and draws a figure pattern using the single electron beam formed by passing the beam through the first, second and third aperture in sequence. Each of the first, second and third aperture has a mechanism for rotationally driving the aperture around an optical axis up to an arbitrary angle from 0 to 360°. Further, in the third aperture, a mechanism for varying the opening slit width of the rectangular opening portion is provided.

Abstract: It is made possible to prevent the color aberration at the lenses from increasing and prevent the current distribution on the sample surface from changing at the time of the blanking operation. A deflector is placed between the first and second shaping apertures. A first crossover image is formed between the first and second shaping apertures. A second crossover image is formed in the vicinity of the beam blanking aperture. The deflector placed between the first shaping aperture and the second shaping aperture includes at least two deflectors. A beam position on the beam blanking aperture is moved without moving the image of the first shaping aperture on the second shaping aperture, by deflecting the electron beam at the time of blanking.

Abstract: An exposure method and a semiconductor device production method that control a rise in temperature of a mask irradiated by a charged particle beam. A displacement of the position of a pattern accompanying with the rise in temperature of the mask and the pattern are projected on an exposed object with a high accuracy. After an electron beam scans one scan line, scan lines are jumped by over a number of scan lines and the electron beam scans the next scan line. Since the number of the overjumped lines is a set number that control the temperature rise of a membrane by overlapping of the electron beam, the temperature rise is controlled by an interlaced-scanning. After one interlaced-scanning, similar to the above the scan lines are jumped over by the predetermined number of scan lines and the electron beam scans the next scan lines.

Abstract: A charged beam exposure apparatus includes: a first shaping aperture provided with a plurality of rectangular openings which are different from each other in at least one of area and shape thereof; a second shaping aperture provided with a pattern having a shape corresponding to that of a pattern to be drawn onto a substrate; a charged beam generator which generates a charged beam to apply the charged beam to the first shaping aperture; a projector which projects the charged beam that has passed through an arbitrary opening of the first shaping aperture onto the second shaping aperture; a deflection unit provided between the charged beam generator and the projector to deflect the charged beam; a deflection controller which controls the deflection unit so that the opening of the first shaping aperture is selected which enables adjustments of a drawing time and a resolution conforming to requirements/specifications of the pattern to be drawn; and a demagnification projector which projects the charged beam that

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.

Abstract: A method of producing electron beam writing data in which a figure cell contained in the cell-based device pattern in electron beam lithography of character projection scheme is extracted as a character pattern is disclosed. The method comprises removing an overlap of pattern data included in the figure cell, producing a character pattern cutting frame from a cell allocation frame in the figure cell, assigning a figure inside of the produced character pattern cutting frame to a pattern to be shot in a character projection scheme as a character pattern, defining a figure outside of the character pattern cutting frame as a non-character pattern, removing an overlap between an adjacent pattern and the non-character pattern, and assigning a portion of the non-character pattern, which is not overlapped on the adjacent pattern to a pattern to be shot in a variable shaping beam scheme.

Abstract: A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.

Abstract: A planar pattern (11), having a plurality of apertures of the same size (Wx×Wy), is determined by a two-dimensional layout determination tool (10), and a three-dimensional structure, having a depth d and an undercut amount Uc for making the phase of the transmitted light be shifted by 180 degrees with every even-numbered aperture, is determined by a three-dimensional structure determination tool (20). Simulation of transmitted light is executed for a structural body having the planar pattern (11) and the three-dimensional structure (21) by a three-dimensional simulator (30) to determine the light intensity deviation D of transmitted light for an odd-numbered aperture without a trench and an even-numbered aperture with a trench. At a two-dimensional simulator (40), simulations using a two-dimensional model prepared based on this deviation D are performed to determine a correction amount ? for making the deviation D zero and obtain a new planar pattern (12).

Abstract: A manufacturing apparatus of a semiconductor device is disclosed, which comprises an implantation source which applies particles or an electromagnetic wave into an implantation region of a semiconductor substrate in a ? direction shifted by an angle ? from a vertical direction of the semiconductor substrate, a first stencil mask disposed between the semiconductor substrate and the implantation source, the first stencil mask having a first opening corresponding in the ? direction to the implantation region, and a second stencil mask disposed between the first stencil mask and the implantation source, the second stencil mask having a second opening corresponding in the ? direction to the implantation region.

Abstract: A technique for implementing a variable aperture lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as a variable aperture lens. The variable aperture lens may comprise a first electrode element. The variable aperture lens may also comprise a second electrode element. The variable aperture lens may further comprise a driver assembly coupled to at least one of the first and the second electrode elements, wherein the driver assembly alters an aperture between the first and the second electrode elements based on a geometry of an ion beam.

Abstract: A substrate earthing mechanism includes a plate-like spring extending toward a substrate in a direction parallel to a surface of the substrate, and a contact portion coupled to a tip end of the plate-like spring for coming into contact with the substrate to thereby provide electrical conduction therebetween. The plate spring and the contact portion are laid out so that a contact position at which the contact portion is in contact with the substrate and a layout position of the plate-like spring are substantially the same in position as each other in a direction at right angles to the substrate surface in the state that the plate spring is out of its elastic deformation.

Abstract: A charged beam drawing apparatus deflects, by an electrostatic deflector, a charged beam generated from a charged beam source, and applies the charged beam to a desired position on a sample to draw a pattern. The electrostatic deflector includes a plurality of deflecting electrodes arranged symmetrically with respect to a point around an optical axis of the charged beam, a ground external cylinder which is disposed coaxially with the optical axis and which is provided to enclose the deflecting electrodes, a resistive film provided on an inner surface of the ground external cylinder, and a conductive film provided on a surface of the resistive film. A capacitance is formed between the deflecting electrodes and the conductive film, and a resistance is formed between the ground conductor and the conductive film.

Abstract: In a pattern definition device for use in a particle-beam processing apparatus a plurality of apertures (21) are arranged within a pattern definition field (pf) wherein the positions of the apertures (21) in the pattern definition field (pf) taken with respect to a direction (X, Y) perpendicular, or parallel, to the scanning direction are offset to each other by not only multiple integers of the effective width (w) of an aperture taken along said direction, but also multiple integers of an integer fraction of said effective width. The pattern definition field (pf) may be segmented into several domains (D) composed of a many staggered lines (pl) of apertures; along the direction perpendicular to the scanning direction, the apertures of a domain are offset to each other by multiple integers of the effective width (w), whereas the offsets of apertures of different domains are integer fractions of that width.

Abstract: A projection system comprises an array of lenses MLA, each lens transmitting a unique part of a patterned beam. Measuring devices measure a distance between the array of lenses MLA and a substrate W. A controller controls an actuator to adjust a position (e.g., height and/or tilt) of the microlens array MLA.

Abstract: A high-perveance steady state deuterium ion gun was developed using a magnetic-index resonator in an Inductive Coupling Radio Frequency (ICRF) configuration. This approach made it feasible to generate an ion beam within millimeter dimensions extracted by negative potential placed at several centimeters from the exit of the ion source. The ion gun allows high extraction efficiency and low beam divergence as compared to other approaches.

Abstract: Disclosed is an immersion lithography system comprising a liquid crystal media. The liquid crystal is positioned between an objective lens and a substrate stage. A liquid crystal controller having a first electrode and a second electrode is configured to control the liquid crystal during an exposure process.

Abstract: Methods of optimizing a laser-accelerated proton radiation dose to a targeted region are disclosed. Disclosed methods include providing a plurality of modulated polyenergetic proton beamlets and irradiating the targeted region with the plurality of modulated beamlets.

Abstract: A method and apparatus for processing a semiconductor wafer is provided for reducing dimensional variation by feeding forward information relating to photoresist mask CD and profile and underlying layer thickness measured at several points on the wafer to adjust the next process the inspected wafer will undergo (e.g., the etch process). After the processing step, dimensions of a structure formed by the process, such as the CD and depth of a trench formed by the process, are measured at several points on the wafer, and this information is fed back to the process tool to adjust the process for the next wafer to further reduce dimensional variation. In certain embodiments, the CD, profile, thickness and depth measurements, etch processing and post-etch cleaning are performed at a single module in a controlled environment.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: In a projection system a pattern plane on a reticle is illuminated to have a projection image focussed on an image plane. The presence of a pellicle in the optical path causes a virtual shift of the position of the pattern plane on the reticle. Depending on the presence or absence of the pellicle the image plane of the projection image needs to be adapted for proper focussing. A compensator counteracts the virtual shift of pattern plane due to the pellicle, by shifting the position of the pattern plane.

Abstract: An electron beam apparatus having a longer life time of cathode, and allowing a plurality of electron beams to be arranged adequately around an optical axis and five or more electron beams to be formed from a single electron gun. The electron beams emitted from a cathode made of ZrO/W (tungsten zirconium oxide) or a cathode made of carbide of transition metal to the off-optical axis directions may be converged on a sample to scan it. The apparatus includes a plate for reducing a vacuum conductance defined between the electron gun chamber side and the sample side, and apertures are formed through the plate at locations offset from the optical axis allowing for the passage of the electron beams. In order to evaluate a pattern on the sample, the electron beam emitted from the electron gun is incident to the sample surface via an objective lens.

Abstract: A particle monitor in the process chamber of a semiconductor device manufacturing apparatus provides a measure of a flux of contaminant particles in the chamber. The flux is measured whilst process conditions are produced in the process chamber and a process parameter is adjusted in response to the measured flux in order to reduce this flux during the process. In an ion implanter, the particle sensor measures the flux of particles entrained with the ion beam at a location in front of the wafer being processed.

Abstract: An aberration adjusting method of a charged particle beam optical system. The method includes an aberration measuring step of measuring N aberrations of the charged particle beam optical system, an aberration sensitivity acquiring step of changing M control amounts to control optical elements included in the charged particle beam optical system, obtaining variations of the N aberrations by executing the aberration measuring step, and obtaining aberration sensitivities of the M control amounts. The method further includes a control amount deciding step of deciding the M control amounts on the basis of the N aberrations and the aberration sensitivities of the M control amounts to set the N aberrations to target aberrations. The aberration is a displacement of each image height of charged particles beams. The control amount is an amount for controlling a position of the charged particle beams, and M<N, in which M and N are positive integers.

Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

Abstract: A variable rectangle-type electron beam exposure apparatus for forming rectangular beams of different angles which is capable of highly finely conducting exposure with respect to a predetermined fine line pattern having an arbitrary angle in the pattern region.

Abstract: Disclosed are an electron beam irradiation apparatus and an electron beam irradiation method that are capable of easily curing a material that is hard to be cured by irradiation of ultraviolet rays and of reducing the number of electron beam irradiation tubes. The electron beam irradiation apparatus has a motor for rotationally driving an irradiation target object, a shield container for rotatably accommodating the irradiation target object, and an electron beam irradiation unit provided in the shield container so that the surface of the irradiation target object is irradiated with electron beams, wherein the electron beam irradiation unit and the irradiation target object are relatively moved when the electron beam irradiation unit irradiates the surface of the irradiation target object with the electron beams during a rotation of the irradiation target object.

Abstract: A method of correcting deflection distortion includes dividing a deflection area to which a charged-particle beam is deflected into equal initial blocks as an initial setting, calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected, dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount; calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected, and calculating a correction value correcting a deflection distortion based on the main aberration amount.

Abstract: A method for reducing particles during ion implantation is provided. The method involves the use of an improved Faraday flag including a beam plate having thereon a beam striking zone comprising a recessed trench pattern on which the ion beam scans to and fro. An ion beam selected from the mass analyzer is blocked by the Faraday flag in a closed position between the mass analyzer and the semiconductor wafer. A beam current of the ion beam impinging on the beam striking zone of the beam plate is measured. After the beam current measurement, the Faraday flag is removed such that the ion beam impinges on the semiconductor wafer.

Abstract: In a thin film processing method and system, a film thickness is regulated by using electron beams irradiated from a plurality of electron beam tubes onto a film of varying thickness formed on an object to be processed, wherein the output powers or beam irradiation times of the electron beam tubes are individually controlled according to a distribution of the thickness. In the method and system, electric charges charged in a film of an object to be processed can be removed also.

Abstract: A therapy system using an ion beam, which can shorten the time required for positioning a couch (patient). The therapy system using the ion beam comprises a rotating gantry provided with an ion beam delivery unit including an X-ray tube. An X-ray detecting device having a plurality of X-ray detectors can be moved in the direction of a rotation axis of the rotating gantry. A couch on which a patient is lying is moved until a tumor substantially reaches an extension of an ion beam path in the irradiating unit. The X-ray tube is positioned on the ion beam path and the X-ray detecting device is positioned on the extension of the ion beam path. With rotation of the rotating gantry, both the X-ray tube emitting an X-ray and the X-ray detecting device revolve around the patient. The X-ray is emitted to the patient and detected by the X-ray detectors after penetrating the patient. Tomographic information of the patient is formed based on signals outputted from the X-ray detectors.

Abstract: A method for projecting a predetermined pattern of an electron beam from an emitter to a wafer in a vacuum chamber of an electron-beam lithography system is provided. An initial condition for performing an electromagnetic focusing is first set and outspread phenomenon of the electron beam, which is caused by an initial emitting velocity difference and an initial emitting angle difference between electrons emitted from the emitter, is corrected. Then, a shift of the electron beam, which is caused when an electric field is not in parallel with a magnetic field, is corrected and a shift of the electron beam, which is caused by a gradient of the magnetic field, is corrected, after which an increase of a beam diameter of the electron beam, which is caused by Coulomb-interaction between the electrons emitted from the emitter, is corrected. Then, it is determined if a focusing error is within a range of an allowable error.

Abstract: In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

Abstract: A charged particle beam exposure apparatus for writing a desired pattern on a substrate using a charged particle beam. The apparatus includes a blanking unit, having a deflector capable of deflecting the charged particle beam in at least two directions, configured to control beam passage to the substrate by deflecting the charged particle beam, and a setting unit configured to set a deflection direction of the charged particle beam by the deflector.

Abstract: A particle therapy system capable of measuring energy of a charged particle beam even during irradiation of the charged particle beam is provided. A beam delivery (irradiation) system comprises a block collimator constituted by a pair of collimator members, and an energy detector mounted to one of the collimator members to be disposed on the upstream side thereof. When the pair of collimator members are moved in directions away from each other, a beam passage is formed between them. The energy detector constitutes an energy measuring device together with a signal processing unit. A part of the ion beam having reached the interior of the irradiation nozzle is irradiated to a patient through the beam passage. When a part of the remaining ion beam enters the energy detector, electric charges generate in the energy detector. The signal processing unit determines energy of the ion beam based on a position within the energy detector at which electric charges have generated in maximum amount.

Abstract: A beam deflector for scanning performs deflecting of a charged particle beam having a regular trajectory in a vacuum space to thereby periodically change the trajectory of the charged particle beam. The beam deflector comprises a pair of deflection electrodes disposed so as to confront each inner electrode surface having a symmetrical concave extending in a direction of a beam trajectory.

Abstract: A charged-particle beam exposure apparatus includes a charged-particle beam source for emitting a charged-particle beam, an electrooptic system array which has a plurality of electron lenses and forms a plurality of intermediate images of the charged-particle beam source by the plurality of electron lenses, and a projection electrooptic system for projecting on a substrate the plurality of intermediate images formed by the electrooptic system array. The electrooptic system array includes at least two electrodes arranged along paths of a plurality of charged-particle beams, each of the at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode which is interposed between the at least two electrodes and has a plurality of shields corresponding to the respective paths of the plurality of charged-particle beams.

Abstract: This invention relates to an Ilumination system for scanning lithography especially for wavelengths?193 nm, particularly EUV lithography, for the illumination of a slit, comprising at least one field mirror or at least one field lens and being characterized in that at least one of the field mirror(s) or the field lens(es) has (have) an aspheric shape.

Abstract: A device and a method for positionally accurate implantation of individual particles in a substrate surface (1a) are described. A diaphragm for a particle beam to be directed onto the substrate surface (1a) and a detector provided thereon in the form of a p-n junction for determining a secondary electron flow produced upon impact of a particle onto the substrate surface (1a) are provided on a tip (4) which is formed on a free end portion of a flexible arm (2) to be mounted on one side. The device is part of a scanning device operating according to the AFM method.

Abstract: A charged beam writing apparatus is disclosed, which comprises a shaped beam forming unit which shapes a charged beam radiated from a charged beam source into a beam of a desired shape by using at least two shaping masks each having a shaping aperture to form a shaped beam, a figure dividing unit which divides a contour portion of a pattern to be formed on an object layer into a plurality of figure portions having a predetermined area, a writing unit which writes the figure portions of the contour portion by using a shaped beam of the predetermined area, and a focus control unit which performs focusing of the beam radiated from the charged beam source, by using a shaped beam having the same area as that of the shaped beam which has the predetermined area and is used in writing of the figure portions of the contour portion.

Abstract: In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.