Abstract: According to one embodiment, a method of calibrating level sensors of at least two lithographic projection apparatus to correct machine to machine level sensor process dependency includes using a first lithographic projection apparatus to measure a first set of leveling data for a reference substrate and a second set of leveling data for a substrate processed according to a selected process, and using a second lithographic projection apparatus to measure a third set of leveling data for the reference substrate and a fourth set of leveling data for the processed substrate. The method also includes calculating, based on the first, second, third and fourth sets of leveling data, a set of level sensor parameters corresponding to machine to machine level sensor differences for the selected process, wherein the machine to machine level sensor differences are measured and stored as intrafield values.

Abstract: Alignment to buried marks is carried out by using electromagnetic radiation to induce waves in the layers covering the buried layer. The acoustic or thermal waves cause reflectivity changes and displacements in the surface whose position and/or time dependence reveals the true position of the buried alignment mark. The buried alignment mark may be revealed by mapping the thickness of covering layers in its vicinity, e.g. by measuring the time dependence of the decay of a standing wave induced in the covering layers or by measuring the delay time of echoes of a travelling wave created at interfaces between different ones of the covering layers. Alternatively, a travelling wave can be created over the whole area of the mark so that echoes off the top and bottom of the buried mark carry positive and negative images of the mark; these cause reflectivity differences and displacements when they reach the surface which can be aligned to.

Abstract: A system for monitoring wafer surface topography during a lithographic process is described that includes projection optics that illuminate a portion of the wafer surface. The system further includes at least one off-axis wafer surface gauge that monitors wafer surface height relative to the projection optics as well as at least one backplane gauge that monitors wafer position relative to a backplane. The system also includes a filter that translates time-domain measurements of off-axis wafer surface gauge and the backplane gauge into space-domain measurements. A coordinate transformer is included that transforms the space-domain measurements into a single coordinate system. A computational element that combines the space-domain measurements with a focus set-point to determine correction data is also included together with a delay line for storing the correction data until the wafer has moved a predetermined distance.

Abstract: An exposure apparatus has a surface position detection apparatus for measuring the surface position of a measurement area on the surface of a wafer. The surface position detection apparatus scans a shot area on the wafer having a pattern structure and detects the surface position of a measuring point provided within the shot. Prior to detecting the surface position of the measuring points within the shot, drive parameters for the surface position detection apparatus are determined according to a scanning speed employed for the shot in order that a measurement area of the surface position detection apparatus for the measuring points assumes a preset size. The surface position detection apparatus is then driven according to the parameters so determined, measuring the surface position of the measuring point in the shot. The exposure process is then controlled in accordance with the results of those measurements.

Abstract: A system for monitoring wafer surface topography during a lithographic process is described that includes means for capturing wafer position and surface data at a first time when a wafer is at a first location, means for generating correction data for a second wafer location prior to the wafer reaching the second wafer location, and means for storing the correction data in a spatial delay line. The means for capturing wafer position and surface data includes means for capturing backplane position data with a plurality of stalk gauges. The means for generating correction data includes means for converting the wafer position and surface data from a time-domain into a space domain. The system also includes means for moving the wafer based on the correction data when the wafer is at the second wafer location at a second time.

Abstract: When a base film of a substrate is formed, for instance, on a scribe line of a wafer, a quadrangular first inspection pattern is formed in advance, and when a resist pattern is formed, a second inspection pattern are formed so as to be on a straight line to the first inspection pattern in a top plan view. When light is irradiated to a region including the first inspection pattern and the second inspection pattern and a spectrum is formed based on the reflected diffracted light, information of a line width of the second inspection pattern and a pitch of both inspection patterns is contained therein. In this connection, by preparing in advance a group of spectra based on various kinds of inspection patterns according to simulation and by comparing with an actual spectrum, the most approximate spectrum is selected, and thereby the line width and the pitch are estimated to evaluate the resist pattern.

Abstract: The method for controlling layers alignment in a multi-layer sample (10), such a semiconductors wafer based on detecting a diffraction efficiency of radiation diffracted from the patterned structures (12, 14) located one above the other in two different layers of the sample.

Abstract: Disconnection defects, short-circuit defects and the like in wiring patterns of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).

Abstract: A system and sensor for measuring, inspecting, characterizing, evaluating and/or controlling optical lithographic equipment and/or materials used therewith, for example, photomasks. In one embodiment, the system and sensor measures, collects and/or detects an aerial image (or portion thereof) produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a production-type photomask (i.e., a wafer having integrated circuits formed therein/thereon) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits. A processing unit, coupled to the image sensor unit, may generate image data which is representative of the aerial image by interleaving the intensity of light sampled by each sensor cell at the plurality of location of the platform.

Abstract: Methods and apparatus for alignment of masks and wafers in charged-particle-beam (CPB) pattern-transfer use optical position sensors to determine the positions of a mask or a mask stage with respect to an axis of a CPB optical system. The optical position sensor uses optical reference marks provided on the mask or mask stage. Determination of the position of the mask of the mask stage permits a coarse alignment of the mask or the mask stage. CPB reference marks are provided on masks, mask stages, wafers, and wafer stages, permitting alignment of the mask stage or the mask with respect to the wafer stage or wafer, respectively, using the charged particle beam. The charged particle beam is scanned with respect to the wafer or wafer-stage CPB reference marks to determine a deflection corresponding to an alignment of the CPB reference marks of the mask and wafer (or mask stage and wafer stage). Use of the charged particle beam for such alignment permits a fine alignment.

Abstract: A light energy inspecting apparatus provides an optimum exposure condition in photolithographic apparatus by sensing the energy levels of light passing through the aperture of a diaphragm. The light energy inspecting apparatus includes a photoelectric transformation unit, a drive mechanism for the photoelectric transformation unit, and a controller. The photoelectric transformation unit is made up of a plurality of photoelectric transformation devices (PTDs) which can each sense the level of energy of incident light and convert the incident light to a corresponding electric signal. The drive mechanism positions the photoelectric transformation unit relative to the diaphragm.

Abstract: Described are high precision gap and orientation measurement methods between a template and a substrate used in imprint lithography processes. Gap and orientation measurement methods presented here include uses of broad-band light based measuring techniques.

Abstract: In a lithographic projection apparatus, a structure surrounds a space between the projection system and a substrate table of the lithographic projection apparatus. A gas seal is formed between said structure and the surface of said substrate to contain liquid in the space.

Abstract: Methods and apparatuses for scanning of optical beams are disclosed. A beam is optically coupled to an optical conduit, and the optical conduit is made to bend. A set of positions of the optical conduit is measured and the optical conduit is bent. The properties of the exiting light beam are determined by the optical conduit and the bending of the optical conduit, thereby scanning the beam.

Abstract: A method of calibrating level sensors of at least two lithographic projection apparatus to correct machine to machine level sensor process dependency includes measuring a first set of leveling data using a first lithographic projection apparatus for a reference substrate, measuring a second set of leveling data using the first apparatus for a substrate processed according to a selected process, measuring a third set of leveling data using the second apparatus for the reference substrate, measuring a fourth set of leveling data using the second apparatus for the processed substrate, and using the first, second, third and fourth sets of leveling data to calculate the set of level sensor parameters corresponding to machine to machine level sensor differences for the selected process.

Abstract: A stage assembly (10) for moving and positioning a device (26) includes a device stage (14), a stage mover assembly (16), and a follower assembly (18). The stage mover assembly (16) moves the device stage (14) along an X axis, along a Y axis and about a Z axis. The follower assembly (18) includes a first follower guide (76) and a first follower frame (80). The first follower guide (76) supports the first follower frame (80) and allows the first follower frame (80) to move along the Y axis. Further, the first follower frame (80) supports the device stage (14) and allows the device stage (14) to move along the Y axis, along the X axis, and about the Z axis. Importantly, the first follower frame (80) is moved along the Y axis with a first follower mover (84). With this design, the device stage (14) can be made relatively thin vertically and the control lines (20) to the device stage (14) can be relatively short.

Abstract: A method and system for measuring stray light for use in an exposure apparatus uses an image sensor to be disposed at a wafer level in the exposure apparatus. The stray light is measured by preparing a reference pattern and a measuring pattern on a reticle. The reference pattern includes a light shielding region having first open regions for transmitting light to a center of an active region of the image sensor. The measuring pattern includes a light shielding region having second open regions for transmitting light to a periphery of the active region. A first intensity of light reaching the active region after being filtered by the reference pattern and a second intensity of light reaching the image sensor after being filtered by the measuring pattern are measured. The intensity of the stray light is evaluated by a difference between the first and second light intensities.

Abstract: An alignment system and method is disclosed, the alignment system and method provide for alignment of at least one component to an optical signal using a neural controller circuit. The neural controller circuit facilitates parallel and sequential alignment of a plurality of components to the optical signal.

Abstract: A position measuring apparatus includes a radiation source mounted on an isolated reference frame and a two-dimensional radiation detector mounted adjacent the radiation source. The object whose position is to be detected has a retro-reflector mounted on it so as to reflect light emitted from the radiation source along a return path that is parallel to but displaced from the incident light path. The amount of displacement is dependent on the position of the object and is measured by the two-dimensional detector. Three such apparatus can be combined in a system to measure the position of the object in all six degrees of freedom.

Abstract: A mask stage RS1 and a substrate stage WS1 are synchronously moved, and a mask stage RS2 and a substrate stage RS2 are synchronously moved, in a state in which a mask on the mask stage RS1 and a mask on the mask stage RS2 are irradiated with illumination light beams from illumination optical systems IOP1, IOP2 respectively. The reaction force on a base board due to the movement of the stages can be canceled to suppress the vibration of an exposure apparatus by moving the mask stage RS1 and the mask stage RS2 in mutually opposite directions. The throughput can be improved by performing alignment operation on substrate stages WS3, WS4 concurrently with the exposure operation.

Abstract: In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment, the system, sensor and technique measures, collects and/or detects an aerial image (or portion thereof) produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a production-type photomask (i.e., a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits.

Abstract: Compensating for semiconductor wafer tilt by rotating the semiconductor wafer and averaging the resulting semiconductor wafer tilts detected is disclosed. The semiconductor wafer has an asymmetrical topography. A first leveling tilt of the semiconductor wafer is detected using a leveling sensor of a stepper. The semiconductor wafer is then effectively or actually rotated, such as by forty-five degrees, ninety-degrees, or one-hundred-eighty degrees. A second leveling tilt of the semiconductor wafer is then detected, again using the leveling sensor of the stepper. The first and the second leveling tilts are averaged to yield an average leveling tilt. The average leveling tilt is then compensated for, by, for instance, oppositely tilting the semiconductor wafer in an effective or actual manner.

Abstract: A position measuring device includes a radiation source mounted on an isolated reference frame and a two-dimensional radiation detector mounted adjacent the radiation source. The object whose position is to be detected has a mirroring device, e.g. a retro-reflector, mounted on it so as to reflect light emitted from the radiation source along a return path that is parallel to but displaced from the incident light path. The amount of displacement is dependent on the position of the object and is measured by the two-dimensional detector. Three such devices can be combined in a system to measure the position of the object in all six degrees of freedom.

Abstract: A method of transferring a pattern of a mask onto shot areas on a substrate determines two sets of parameters in a single model equation. The parameters in one of the two sets relate to arrangement of a plurality of shot areas on the substrate, and the parameters in the other set relate to the shot areas per se. The mask and the substrate are moved relatively in accordance with the determined parameters.

Abstract: A motion control system for reducing vibration in moving components. The system includes a position control drive and a vibration control drive. At least one position sensor is used to provide feedback signals which are in turn used to provide control signals for both the position control drive and the vibration control drive. In a preferred embodiment the motion control system is applied to a stage of an integrated circuit lithography step and scan machine. The position control drives are linear magnetic actuators and the vibration control drives are electroceramic actuators. A laser interferometer position monitoring system is used to measure the position, speed, and acceleration of the stage system. Actuators apply controlled forces (based on measurements from the position monitoring system) to each stage to control the motion of the stage. Signals from the interferometer position system are also used to control vibration.

Abstract: An exposure method illuminates a mask that forms a desired pattern and an auxiliary pattern smaller than the desired pattern, and projects light from the mask onto an object to be exposed via a projection optical system at a position offset from a focus position that provides the highest resolution so that the auxiliary pattern is not resolved.

Abstract: A method for aligning existing layers formed prior to a new layer and the new layer in forming the new layer on a wafer 4, wherein a microscope 6 as a first measurement condition and a microscope 7 as a second measurement condition are used, and marks 4a and 4b formed in each of said existing layers are measured by switching the first and second conditions, and said existing layers and said new layer are aligned based on measurement of mark position of each of said existing layers, and the microscope 7 has a plurality of measurement conditions as optical characteristics, and the measurement conditions are switched.

Abstract: The present invention provides for a method for adjusting an alignment microscope. In the method of the present invention an alignment mask is used in which the one side comprises at least one alignment mark and the other side is reflective. For the adjustment, the microscope is first focused to the alignment mark and then refocused to the mirror image of the alignment mark generated by the reflective side. The microscope is then adjusted by comparing the positions of the alignment mark and the generated mirror image of the alignment mark until the alignment mark overlaps its mirror image. Moreover, a device for adjusting an alignment microscope in accordance with the method of the present invention.

Abstract: An exposure apparatus for exposing a substrate to a pattern due to an original includes a substrate stage which holds and moves the substrate, and a first measurement unit which is arranged on the substrate stage, and measures a position of a mark formed on the original by projecting and receiving light.

Abstract: In an apparatus for monitoring any deviation of a planar surface from its desired position, a light source and a light detector are positioned so that when the surface is at the desired position a beam of light projected by the light source is reflected by the surface and fully registers on the light detector causing the light detector to generate a peak output signal. When the surface deviates from its desired position, the reflected beam of light does not fully register on the light detector, causing the light detector to generate less than peak output signal.

Abstract: A lithographic apparatus includes a support that provides a magnetic force in a first direction between a first part and a second part of the apparatus. The support comprises first, second and third magnet assemblies, the first and third magnet assemblies attached to the first part and each including at least one magnet oriented such that its magnetic polarization is substantially parallel or anti-parallel to the support direction. The first and third magnet assemblies define a space between them in a second direction that is substantially perpendicular to the first direction. The second magnet assembly is attached to the second part and includes at least one magnet. The second magnet assembly is at least partly located in the space. The at least one magnet of the second magnet assembly has its magnetic polarization oriented so as to produce a bias force substantially along the support direction by magnetic interaction between the first, second and third magnet assemblies.

Abstract: An exposure apparatus includes an illumination optical system for illuminating a pattern formed on an object with light from a light source, a projection optical system for projecting, onto a plate, an image of a pattern illuminated by the illumination optical system, the projection optical system including a mirror, and a detection system for detecting a positional offset of the image of the pattern.

Abstract: An exposure apparatus and method to expose an object with an illumination beam irradiated on a mask from a light source disposes an optical unit between the light source and an optical integrator of an illumination optical system to illuminate the mask with an illumination beam, of which an intensity distribution on a Fourier transform plane with respect to a pattern on the mask has an increased intensity portion apart from the optical axis relative to a portion of the intensity distribution on the optical axis.

Abstract: In a projection system for EUV, the positions of mirrors are measured and controlled relative to each other, rather than to a reference frame. Relative position measurements may be made by interferometers or capacitive sensors mounted on rigid extensions of the mirrors.

Abstract: An apparatus for forming a pattern has a beam position detector, a fine-section scale corrector, a pulse data selector, and a control pulse signal generator. The beam position detector measures a position of the beam on a scanning-line. The fine-section scale corrector changes a scale of a series of fine-sections to a series of corrected fine-sections, in accordance with a scale-change rate, to change a scale of the pattern. The pulse data selector selects a set of pulse data, corresponding to a length of the corrected fine section that the beam passes, from a series of sets of pulse data. The control pulse signal generator successively generates a sequence of control pulse signals in accordance with the selected set of pulse data.

Abstract: An apparatus for forming a pattern has a light source, a scanning unit, a memory, a pulse data selector, a control pulse signal generator, a control pulse signal generator, a writing pulse signal generator, and an optical modulator. The time-interval detector detects successively a time-interval that is a pass-time of the beam in each of a series of fine sections. The pulse data selector selects a set of pulse data, corresponding to the detected time-interval, from a series of sets of pulse data. The control pulse signal generator successively generates a sequence of control pulse signals in accordance with the selected set of pulse data.

Abstract: A method for marking a semiconductor wafer 302 includes the steps of: providing a reticle 300 including liquid crystal pixels; positioning the semiconductor wafer in proximity to the reticle; directing radiation through a first plurality of the pixels onto a first location on the wafer; changing the relative positions of the semiconductor wafer and the reticle; and directing radiation through a second plurality of the pixels onto a second location on the wafer. The first plurality of pixels can be used to form a first mark and the second plurality of pixels can be used to form a second mark, wherein the second mark is different from the first mark. The marks can be made of a pattern of dots in order to save space. The pixels can be selected to form certain marks by using a computer 304 to turn on or off a transistor that may be associated with each pixel. Also described is a system for marking a semiconductor wafer.

Abstract: Patterned layers in an integrated circuit (IC) or other device are aligned in conjunction with the detection of the topology of the layers. The topology can be used to determine the location of a metrology mark and/or to compensate for a horizontal shift in the apparent location of the metrology mark. Precise detection of topography can be achieved without physical contact with the IC or other device with an atomic force microscope.

Abstract: A projection exposure apparatus includes a diaphragm controlling unit controlling one or more of an diaphragm, an iris diaphragm, and a relay lens system. In addition, the projection exposure apparatus also includes a line width calculator which calculates a bias, which is a difference between a line width in a dense part and a line width in an isolated part, based on information regarding a mask pattern, the wavefront aberration of a lens, the effective light source of an illumination optical system, the half-width of a laser, the temperature change in a projection optical system due to exposure, etc. When the bias is out of a tolerance range, the line width calculator calculates a correction value for the diaphragm of the projection optical system or a correction value for the effective light source of the illumination optical system in accordance with the bias which is to be corrected. Then, the diaphragm controlling unit is driven in accordance with the calculation results.

Abstract: In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment, the system, sensor and technique measures, collects and/or detects an aerial image produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a product-type photomask (i.e., a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits.

Abstract: A parameter calculation unit statistically calculates the estimations and their certainty of a predetermined number of parameters, which uniquely specify any position on an object, for each of a plurality of measured sample sets on the basis of position information of marks composing the sample set. A valid value calculation unit calculates statistically valid values of the predetermined number of parameters on the basis of groups of the estimations and their certainty of the predetermined number of parameters for the respective sample sets. Furthermore, an evaluation unit statistically evaluates if the number of marks composing a sample set can be reduced. If it is determined that the number of marks can be reduced, the parameter calculation unit calculates values of the predetermined number of parameters by using a new sample set having reduced number of marks.

Abstract: A method and apparatus for controlling the focal position of the UV light for auto-focussing the converged UV light, and a method and apparatus and for inspecting a device, such as a semiconductor wafer or liquid crystal using the converged UV light, in which the UV light converged is to be auto-focussed accurately and speedily. The method includes an inspection stage 11 for supporting a semiconductor wafer, an objective lens for UV light 40 or converging a UV laser light for illuminating the laser light converged to the semiconductor wafer, a distance sensor 41 secured to this objective lens for UV light 40 to detect the distance to the semiconductor wafer and a controller for causing movement of the inspection stage 11 in a perpendicular direction. The controller causes the distance between the objective lens for UV light 40 and the semiconductor wafer to coincide with the target distance T based on the distance as detected by the distance sensor 41.

Abstract: The invention relates to a projection lens comprising a lens assembly that has at least one first narrowing of the group of light beams. A lens with a non-spherical surface is located in front of and/or behind the first narrowing.

Abstract: A light beam emitted from a light source passes through a spatial light modulation device, at which a plurality of unit elements for respectively modulating incident light beam are two-dimensionally arrayed, and a microlens array, at which a plurality of microlenses corresponding to the unit elements are arrayed, and is focused on an exposure surface. A four-part detector, which is structured by four diodes, is disposed on the exposure surface so as to correspond to four pixels which are present at one corner of the exposure area. Relative mispositioning between the spatial light modulation device and the microlens array generates a difference in respective detection signals of the four diodes. Thus, an offset between the spatial light modulation device and the microlenses can be detected. Positional adjustment of the microlens array is performed on the basis of a detected offset amount.

Abstract: Disclosed is an exposure method in which high precision focus calibration is realized by measuring a tilt of an image plane in a scanning direction, so that exposure with a high resolution can be performed. The exposure method includes: a measuring step of measuring a position of an image plane of a projection optical system at a plurality of measurement positions different from each other with respect to a scanning direction; and a correcting step of correcting a tilt of the image plane of the projection optical system based on measurements.

Abstract: A multi-input, multi-output vibration control system for a lithography system. The system provides an actuator, and a sensor useful for controlling vibrations in systems for fabricating electronics equipment. The system includes a processor programmed with a multi-input, multi-output control technique such as a linear quadratic Gaussian, H-infinity or mu synthesis. The actuator may comprise one or more plates or elements of electroactive material bonded to an electroded sheet.

Abstract: An exposure method includes the steps of acquiring information of an alignment mark formed on an object to be exposed, by changing a value of a device parameter, the information being used for an alignment between a reticle and the object, the reticle forming a circuit pattern to be transferred to the object, and the value being able to be set in an exposure apparatus, determining the value of the device parameter of the exposure apparatus based on the information acquired in the acquiring step, and transferring the pattern onto the object using the exposure apparatus that sets the value of the device parameter, which has been determined.

Abstract: A method of determining aberration of a projection system according to one embodiment of the invention includes using a test pattern to pattern a projection beam of radiation, using the projection system to project the patterned beam, and directly measuring an aerial image of the test pattern as formed by the projection system. The test pattern includes a two-dimensional lattice comprising a plurality of unit cells, each unit cell including at least three isolated areas. At least one of a transmissivity, a reflectivity, and a phase-shifting property of the isolated areas is substantially different from that of a remainder of the area of the unit cell.

Abstract: Alignment marks (PMOL, PMOR, and FXY01 to FXY04) for measuring a wafer position are formed on a wafer (W) by projecting alignment mark patterns (PM and FM) arranged on a reticle reference plate (PL) fixed on a reticle stage (RSTG) which supports a reticle.

Abstract: A method for optimizing the illumination conditions of a lithographic apparatus by computer simulation using full resist calculation, the lithographic apparatus comprising an illuminator, a projection system, and a mask having a pattern to be printed in a layer of photoresist material formed on a substrate. This method includes defining a lithographic problem, which may include a lithographic pattern to be printed on a wafer; choosing a resist model of a resist process to be used to print a pattern in the layer of photoresist material; selecting a grid of source points in a pupil plane of the illuminator; calculating separate responses for individual source points, each of the responses representing a result of a single or series of simulations using the resist model; and adjusting an illumination arrangement based on analysis of accumulated results of the separate calculations.