Abstract: Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 ?m to about 10 ?m on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 ?m to about 8 ?m on the substrate.

Abstract: Treating thin film amorphous or mono- or multi-crystalline silicon wafer substrate for use in a photovoltaic cell, the wafer substrate having at least one of a pn- or np junction and a partial phosphosilicate or borosilicate glass layer on a top surface of the wafer substrate, to increase at least one of (a) the sheet resistance of he wafer and (b) the power density level of the photovoltaic cell made from said wafer. The treatment solution being an acidic treatment solution of a buffered oxide etch (BOE) solution of at least one tetraalkylammonium hydroxide, acetic acid, at least one non-ionic surfactant, at least one metal chelating agent, a metal free source of ammonia, a metal free source, of fluoride ions, and water, mixed with an oxidizer solution and optionally water.

Abstract: The polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. The polishing method of the invention is a polishing method for a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

Abstract: An etchant composition, and methods of patterning a conductive layer and manufacturing a flat panel display device using the same are provided. The etchant composition may include phosphoric acid, nitric acid, acetic acid, water and an additive, wherein the additive includes a chlorine-based compound, a nitrate-based compound, and an oxidation regulator. In addition, the flat panel display device may be manufactured by patterning a gate electrode, source/drain electrodes and a pixel electrode using the same etchant composition. The gate electrode, source/drain electrodes and the pixel electrode may be formed of different conductive materials. Accordingly, processes are simplified so that manufacturing costs may be reduced and productivity may be improved.

Abstract: The present invention relates to a method for removing residues from open areas of a patterned substrate involving the steps of providing a layer of a developable anti-reflective coating (DBARC) over a substrate; providing a layer of a photoresist over said DBARC layer; pattern-wise exposing said photoresist layer and said DBARC layer to a radiation; developing said photoresist layer and said DBARC layer with a first developer to form patterned structures in said photoresist and DBARC layers; depositing a layer of a developer soluble material over said patterned structures; and removing said developer soluble material with a second developer.

Abstract: This invention relates to a chemical composition for chemical mechanical polishing (CMP) of substrates that are widely used in the semiconductor industry. The inventive chemical composition contains additives that are capable of improving consistency of the polishing performance and extending the lifetime of a polishing pad.

Abstract: A method for manufacturing a liquid crystal display includes simultaneously forming a gate electrode and a gate bus line on a transparent dielectric substrate, simultaneously forming a channel layer, an ohmic contact layer, and source/drain electrodes by forming a gate insulation film, an amorphous silicon film, a doped amorphous silicon film, and a metal film on the transparent dielectric substrate on which the gate electrode and the gate bus line are formed and etching the metal film, the amorphous silicon film, and the doped amorphous silicon film, and forming a pixel electrode by forming a protective film and a transparent metal film on the transparent dielectric substrate upon which the source/drain electrodes are formed and finely etching the transparent metal film through a lift-off process using a stripper solution.

Abstract: A slurry composition includes about 4.25 to about 18.5 weight percent of an abrasive, about 80 to about 95 weight percent of deionized water, and about 0.05 to about 1.5 weight percent of an additive. The slurry composition may further include a surfactant. In a polishing method using the slurry composition, a polysilicon layer may be rapidly polished, and also dishing and erosion of the polysilicon layer may be suppressed.

Abstract: A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent having at least one of a sulfonate ion (SO3?) and a sulfate ion (OSO3?), and an acidic aqueous solution.

Abstract: A product is obtained by mixing at least one polyethylene glycol with a base, allowing the mixture to rest in ambient air and at a temperature of approximately 25 degrees Celsius to form two phases, and separating the less dense phase representing the product. The product is used as an additive to etching solutions.

Abstract: A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the nonionic surfactant including one or more of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.

Abstract: A patterned transparent conductor including a conductive layer coated on a substrate is described. More specifically, the transparent conductor can be patterned by screen-printing an acidic etchant formulation on the conductive layer. A screen-printable etchant formulation is also disclosed.

Abstract: The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %.

Abstract: Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive planarization techniques. The polishing compositions include a synergistic mixture of water, an oxidizing agent, a complexing agent, and metal ions. Also provided are various methods of surface planarization.

Abstract: A polishing composition contains a polishing accelerator, a water-soluble polymer including a constitutional unit originating from a polymerizable compound having a guanidine structure such as dicyandiamide, and an oxidant. The water-soluble polymer may be a water-soluble polymer including a constitutional unit originating from dicyandiamide and a constitutional unit originating from formaldehyde, a diamine or a polyamine.

Abstract: A metal-polishing liquid includes colloidal silica and a compound represented by Formula (I) or a compound represented by Formula (II). The colloidal silica is substituted by aluminum atoms at least one portion of the silicon atoms on the surfaces thereof. In Formula (I), R1 represents an alkyl group, alkynyl group, alkenyl group, allyl group or aryl group; R2 represents hydrogen atom, an alkyl group, alkynyl group, alkenyl group, allyl group or aryl group; m represents an integer from 0 to 6. In Formula (II), R3 represents an alkyl group or aryl group; n represents an integer from 1 to 30.

Abstract: The present invention provides an aqueous wiresaw cutting fluid composition that reduces the amount of hydrogen produced during a wiresaw cutting process. The composition is comprised of an aqueous carrier, a particulate abrasive, a thickening agent, and a hydrogen suppression agent.

Abstract: Provided is a polishing liquid which is used for chemical mechanical polishing of a body to be polished having a layer containing polysilicon or a modified polysilicon, and using which the polishing rate of a layer containing a silicon-based material other than polysilicon is high and polishing of the layer containing polysilicon can be selectively suppressed. The polishing liquid includes components (A), (B), and (C), has a pH of from 1.5 to 7.0, and is capable of selectively polishing a second layer with respect to a first layer: (A) colloidal silica particles having a negative ? potential; (B) phosphoric acid or an organic phosphonic acid compound represented by the following Formula (1) or (2); and (C) an anionic surfactant having at least one group represented by the following Formulae (I) to (IV): R2—C(R3)3-a—(PO3H2)a??Formula (1): R4—N(R5)m—(CH2—PO3H2)n??Formula (2): —PO3X2??Formula (I): —OPO3X2??Formula (II): —COOX??Formula (III): —SO3X??Formula (IV).

Abstract: An etching solution for texturing a silicon wafer surface is provided. The etching solution may include an aqueous solution of at least one alkaline etching agent and at least one organic compound, wherein the organic compound is a polyalcohol comprising at least four hydroxy groups or a derivative thereof.

Abstract: There is provided a polishing composition for a magnetic disk substrate that can reduce scratches, nanoprotrusion defects, and substrate surface waviness after polishing. The polishing composition for a magnetic disk substrate that contains: a copolymer that has a constituent unit derived from a monomer having a solubility of 2 g or less in 100 g of water at 20° C. and a constituent unit having a sulfonic acid group, and has a saturated hydrocarbon chain as the main chain thereof, or a salt of the copolymer; an abrasive; and water.

Abstract: A texture processing liquid for a transparent conductive film for realizing a high photoelectric conversion efficiency in a thin solar cell and a method for producing a transparent conductive film are provided. The surface of a transparent conductive film mainly composed of zinc oxide is brought into contact with an aqueous solution containing a polyacrylic acid or a salt thereof and an acidic component to form a texture having recesses and productions, and after the process, the surface of the transparent conductive film having recesses and projections is further subjected to a contact treatment with an alkaline aqueous solution.

Abstract: A titanium etchant composition and a method of forming a semiconductor device using the same, the titanium etchant composition including a titanium remover; a corrosion inhibitor; and a deionized water; wherein the corrosion inhibitor includes 5-aminotetrazole.

Abstract: A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etch® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.

Abstract: An etching solution for a metal hard mask. The etching solution comprises a mixture of a dilute HF (hydrofluoric acid) and a silicon containing precursor. The etching solution also comprises a surfactant agent, a carboxylic acid, and a copper corrosion inhibitor. The etching solution is selectively toward etching the metal hard mask material (e.g., Titanium) while suppressing Tungsten, Copper, oxide dielectric material, and carbon doped oxide.

Abstract: A chemical mechanical polishing composition useful for chemical mechanical polishing of a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material; and methods of making and using the chemical mechanical polishing composition. The chemical mechanical polishing composition comprises, as initial components: at least one of a first substance and a second substance; wherein the first substance is according to formula I wherein the second substance is according to formula II an abrasive; and water.

Abstract: A chemical etchant containing hydrogen peroxide and phosphate ions at a controlled pH is provided for selectively etching metals in the presence of one or more metals not to be etched. The etchant is useful in the fabrication of semiconductor components particularly for forming capture pads where TiW is used as a barrier layer for a copper, copper/nickel pad, or copper/nickel alloy pad. A commercial hydrogen peroxide solution is preferred to which has been added phosphoric acid as a source of phosphate ions and KOH as the pH adjuster.

Abstract: The present invention is directed to provide an etching agent for a semiconductor substrate, which is capable of etching a titanium (Ti)-based metal film or a tungsten (W)-based metal film on a semiconductor substrate and an etching method using relevant etching agent, and relates to a liquid for preparing the etching agent for a semiconductor substrate composed of a solution comprising (A) hydrogen peroxide, (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive and/or (D-2) 0.

Abstract: Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.

Abstract: An apparatus for processing a substrate includes a gas-atmosphere applying unit for applying gas atmosphere to the substrate, and a light-exposure unit for exposing the substrate to light through a lower surface of the substrate.

Abstract: A heterocoagulate comprises first particles, having a particle size of at most 999 nm, on a second particle, having a particle size of at least 3 microns. The first particles comprise cerium oxide, and second particle comprises at least one member selected from the group consisting of silicon oxides, aluminum oxides and zirconium oxides.

Abstract: A polishing composition is disclosed containing a nonionic active agent with a molecular weight of 1,000 or more and less than 100,000 and an HLB value of not less than 17, a basic compound, and water. The nonionic active agent is preferably an oxyalkylene homopolymer or a copolymer of different oxyalkylenes. The polishing composition may further contain at least one of silicon dioxide and a water-soluble polymer. The polishing composition is used, for example, in polishing the surface of semiconductor substrates such as silicon wafers.

Abstract: The present invention relates to a polishing composition used in a step of polishing until a barrier layer adjacent to a copper layer is exposed, in a pattern formation of polishing the copper layer provided on an insulating layer through the barrier layer thereby alternately forming a copper embedded wiring and the insulating layer, the polishing composition including: an alicyclic resin acid; a colloidal silica in which a content thereof in the polishing composition is from 0.1 to 1.5% by mass, an average primary particle size thereof is from 10 to 40 nm, an average secondary particle size thereof is from 30 to 80 nm, and (the average secondary particle size×the content) is in a range of from 10 to 40; and tetramethylammonium ion.

Abstract: A polishing slurry includes an abrasive, a dispersion agent, a polish accelerating agent and an adhesion inhibitor. The adhesion inhibitor includes a benzene compound combined with a carboxyl group. Methods of planarizing an insulating layer using the slurry are also provided.

Abstract: Abrasive particles having a particle diameter of not more than 100 nm are manufactured from raw material. The manufactured abrasive particles are separately dispersed, and are coated with a polymer. Coated abrasive particles having a particle diameter of not more than 100 nm are selected and are mixed with a liquid component of a slurry to manufacture the slurry. A pH adjuster and a viscosity agent are added to the slurry. A glass substrate is polished using the manufactured slurry. Since the abrasive particles having a particle diameter of more than 100 nm or an agglomerate of the cohering abrasive particles does not contact the glass and does not cause big scratches on the glass, the generation of the scratches of 70 nm or more on the glass during polishing are suppressed.

Abstract: The invention provides fumed silica comprising aggregates that have an aggregate size and a surface area that satisfy particular formulas relating aggregate size to surface area, as well as aggregates that exhibit particular viscosity, power law exponent index, and/or elastic modulus characteristics when dispersed in liquid media. The invention also provides processes of preparing such fumed silica by combining a silica precursor with a stream of combustible gas, combusting the stream, and producing a stream of combusted gas and fumed silica particles, wherein dopants are introduced, the time/temperature profile, or history, of the stream of combusted gas and fumed silica particles is adjusted to allow for post-quench aggregate growth, and/or additional silica precursor is introduced into the stream of combusted gas.

Abstract: The present invention relates to a polishing method for polishing a to-be-polished surface including a polysilicon film having a silicon dioxide film directly thereunder, in manufacturing a semiconductor integrated circuit device, the method including: a first polishing step of polishing and planarizing the polysilicon film with a first abrasive containing a cerium oxide particle, water and an acid; and a second polishing step of polishing the polysilicon film planarized in the first polishing step with a second abrasive containing at least a cerium oxide particle, water, an acid and a water-soluble polyamine or a salt thereof and stopping polishing by exposure of the silicon dioxide film.

Abstract: A heat-reactive resist material of the invention is characterized in that the boiling point of the fluoride of the element is 200° C. or more. By this means, it is possible to achieve the heat-reactive resist material having high resistance to dry etching using fluorocarbons to form a pattern with the deep groove depth.

Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

Abstract: A chemical mechanical polishing slurry containing multiple oxidizers and nano abrasive particles (including engineered nano diamond particles) suitable for polishing multilayer substrate with tungsten and Ti/TiN barrier layers. The slurry contains no metallic catalyst and has low total abrasive particle content. The absence of metal ions can be advantageous for certain applications as certain metal ions may present contamination issues. A low total abrasive content may also lower the total defect counts, reduce the slurry waste treatment burden, and simplify the post CMP clean process.

Abstract: A factory, an apparatus, and methods of using an in situ finishing information for finishing workpieces and semiconductor wafers are described. Changes or improvements to cost of manufacture of a workpiece using current in-process cost of manufacture information, tracked current in-process cost of manufacture information, or current cost of manufacture parameters are discussed. Appreciable changes to quality or cost of manufacture of a workpiece using tracking, using in-process tracked information, networks including a multiplicity of apparatus, and using in situ finishing information are discussed. A factory, apparatus, and methods to change or improve process control are discussed. A factory, apparatus, and methods to change or improve real-time process control are discussed. A factory, apparatus, and methods to change or improve feedforward and feedback control are discussed. The workpieces can be tracked individually or by process group such as a process batch.

Abstract: The polishing solution is useful for removing a barrier from a semiconductor substrate. The solution contains by weight percent 0.001 to 25 oxidizer, 0.0001 to 5 anionic surfactant, 0 to 15 inhibitor for a nonferrous metal, 0 to 40 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent selected from imine derivative compounds, hydrazine derivative compounds and mixtures thereof, and water; and the solution has an acidic pH.

Abstract: Semiconductor processing compositions for use with silicon wafers having an insulating layers and metalization layers on the wafers comprising water and one or more Troika acids which is also referred to as ?,?-disubstituted trifunctional oximes or ?-(Hydroxyimino) Phosphonoacetic acids, their salts, and their derivatives.

Abstract: A polishing composition of the present invention contains an oxidant, an anticorrosive, and a surfactant comprising a compound represented by Chemical Formula 1: One to three of R1 to R5 in Chemical Formula 1 are alkyl groups, alkynyl groups, alkenyl groups, aryl groups, or arylalkylene groups, one is a hydrogen atom or an alkyl group having 1 to 9 carbon atoms, and the remainder are hydrogen atoms. O—R6 is oxyethylene, oxypropylene, or a random or block conjugate of oxyethylene and oxypropylene. n is an integer of 1 or more. X is an OSO3? group, an OPO32? group, or an OH group.

Abstract: Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates.

Abstract: The present invention relates to a polishing slurry including: a colloidal silica having an average particle size of 40 nm or more; water; and a ? potential adjusting component, in which (1) the ? potential adjusting component includes at least one sodium salt selected from the group consisting of sodium nitrate and sodium sulfate, and the polishing slurry has a pH of 8 or more, or (2) the ? potential adjusting component includes at least one water-soluble organic polymer selected from the group consisting of a water-soluble polyether polyamine and a water-soluble polyalkylene polyamine and at least one acid selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid, nitrous acid and amidosulfuric acid, and the ? potential adjusting component contains the acid at a ratio of from 0.6 to 1.4 to the water-soluble organic polymer in terms of molar ratio, and the polishing slurry has a pH of 8 or more.

Abstract: The present invention relates to an etchant for wet etching a wiring that includes copper, where the etchant includes approximately 5 to approximately 25 wt % of a peroxide, approximately 0.5 to approximately 5 wt % of an oxidant, approximately 0.1 to approximately 1 wt % of a fluoride-based compound and approximately 1 to approximately 10 wt % of a glycol. The etchant can provide an etching rate that is suitable to many processes, and produces an appropriate etching amount as well as an appropriate taper angle. In addition, the etchant exhibits advantages including relatively low viscosity as compared to phosphoric acid-based etchants, relatively uniform etching characteristics, and relative stability as compared to peroxide-based etchants.

Abstract: The polishing method uses a polishing solution for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the group consisting of nitric acid, sulfuric acid, hydrochloric acid and phosphoric acid for adjusting a pH level of the polishing solution to less than 3, at least 0.0025 benzotriazole inhibitor for reducing removal rate of the interconnect metals, 0 to 10 surfactant, 0.01 to 10 colloidal silica having an average particle size of less than 50 nm and balance water and incidental impurities. The polishing solution has a tantalum nitride material to copper selectivity of at least 3 to 1 and a tantalum nitride to TEOS selectivity of at least 3 to 1.

Abstract: The present invention provides a composition for surface modification of a heat sink, the composition including: 0.01 to 10 parts by weight of an organic titanium compound; 0.01 to 5 parts by weight of an organic silane compound; 0.1 to 10 parts by weight of an organic acid; 0.01 to 5 parts by weight of a sequestering agent; and 0.1 to 10 parts by weight of a buffer with respect to 100 parts by weight of distilled water. The composition of the present invention provides excellent adhesion strength with prepreg, and improve heat releasing performance.

Abstract: In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etchant having a long life of etchant and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etchant. A silicon etchant for anisotropically dissolving monocrystalline silicon therein, which is an alkaline aqueous solution containing (A) tetramethylammonium hydroxide, (B) hydroxylamine and (C) carbon dioxide (CO2) and/or a carbonic acid salt of tetramethylammonium and having a pH of 13 or more, and an etching method of silicon using this etchant are provided.

Abstract: An etching composition, particularly for kinetically controlled etching of copper and copper alloy surfaces; a process for etching copper and copper alloys, particularly for etching at high rates to provide uniform and smooth, isotropic surfaces; an etched copper or copper alloy surface obtained by the process; and a process for generating copper or copper alloy electrical interconnects or contact pads. The etching composition and etching processes provide a smooth, isotropic fast etch of copper and copper alloys for semiconductor fabrication and packaging.