Abstract: A fountain solution for offset lithographic printing ink includes water, one or more surfactants, and a dynamic surface tension of less than 30 dynes/cm. The fountain solution can further include an interfacial tension between the fountain solution and the offset lithographic printing ink of less than 10 dynes/cm. The press waste of a print run applying the fountain solution is reduced to less than 5%. An offset lithographic printing system includes a fountain solution and an offset lithographic printing ink, and the press waste of the offset lithographic printing system is less than 5%.

Abstract: A chemical mechanical planarization method uses a chemical mechanical planarization composition that includes at least one nitrogen containing material and a pH modifying material, absent an abrasive material. The nitrogen containing material may be selected from a particular group of nitrogen containing polymers and corresponding nitrogen containing monomers. The chemical mechanical planarization method and the chemical mechanical planarization composition provide for planarizing a silicon material layer, such as but not limited to a poly-Si layer, in the presence of a silicon containing dielectric material layer, such as but not limited to a silicon oxide layer or a silicon nitride layer, with enhanced efficiency provided by an enhanced removal rate ratio.

Abstract: Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

Abstract: Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed.

Abstract: Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent.

Abstract: A method for preparing a chemical mechanical polishing slurry composition comprises the steps of preparing an aqueous iron salt solution by admixing an iron salt and cooled water of 5° C. or less; preparing an oxide containing silicon and iron as an additive by admixing and stirring a silicon salt and the aqueous iron salt solution for carrying out a reaction of the silicon salt and the aqueous iron salt solution to form an additive solution; and mixing the additive solution with at least one abrasive, at least one oxidizing agent and optionally at least one additional component to form the chemical mechanical polishing slurry composition.

Abstract: Provided are an etching solution in which in etching processing of silicon, particularly in anisotropic etching processing of silicon in a manufacturing process of semiconductors or MEMS parts, a high etching rate is realized by suppressing a lowering an Si etching rate, which is characteristic in a hydroxylamine-containing etching solution and is caused when Cu exists in the solution, and an etching method. The etching solution is a silicon etching solution which is an alkaline aqueous solution containing an alkaline hydroxide, hydroxylamine, and a thiourea and is characterized by dissolving anisotropically monocrystalline silicon therein, and the etching method is an etching method of silicon using the etching solution.

Abstract: Method of using improved compositions for conditioning silicon surfaces during the manufacture of photovoltaic devices. Used for removing particles, organic contamination, and unwanted metals from these surfaces. Also used for removing a thin layer of silicon as required for damage removal or texturing. These conditioning and surface preparation compositions comprise one or more water soluble strongly basic components capable of producing a pH greater than 10, one or more water soluble organic amines, one or more chelating agents, and water.

Abstract: Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water; a method for producing it; and a polishing method of using it. Also provided are materials for the metal-polishing liquid, which include an oxidized-metal etchant, a protective film-forming agent, and a dissolution promoter for the protective film-forming agent.

Abstract: The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Abstract: A composition comprising a fluorinated pyridinium cationic compound of formula (I) wherein Rf is R1(CH2CH2)n—, R1 is a C7 to C20 perfluoroalkyl group interrupted by at least one catenary oxygen atom, each oxygen bonded to two carbon atoms, n is an integer of 1 to 3, and R is H, C1 to C5 linear or branched alkyl, or C1 to C5 linear or branched alkoxy, having surfactant properties for lowering surface tension in an aqueous medium or solvent medium, and for use as a foaming agent.

Abstract: The present invention refers to a method for contactless deposition of new etching compositions onto surfaces of semiconductor devices as well as to the subsequent etching of functional layers being located on top of these semiconductor devices. Said functional layers may serve as surface passivation layers and/or anti-reflective coatings (ARCs).

Abstract: The invention relates to a chemical etching composition and to methods to produce a photovoltaic cell with transparent regions. The methods comprise a step to locally dispense an etching composition on the photovoltaic cell in a pattern, or adjacent to the edge thereof; an optional step to apply heat to the cell; and a step to remove the etching composition. The methods are further characterized by the chemical removal of one or more chemically distinctive layers of the photovoltaic cell where the etching composition is applied. The methods may be used to produce a thin film photovoltaic panel.

Abstract: A method for removing a plurality of dielectric films from a supporting substrate by providing a substrate with a dielectric layer overlying another dielectric layer, contacting the substrate at a first temperature with an acid solution exhibiting a positive etch selectivity at the first temperature, and then contacting the substrate at a second temperature with an acid solution exhibiting a positive etch selectivity at the second temperature. The dielectric layers exhibit different etch rates when etched at the first and second temperatures. The first and second acid solutions may contain phosphoric acid. The first dielectric layer may be silicon nitride and the second dielectric layer may be silicon oxide. Under these conditions, the first temperature may be about 175° C. and the second temperature may be about 155° C.

Abstract: A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B) a compound that includes two or more carboxyl groups, a particle size (Db) of the silica particles (A) that is detected with a highest detection frequency (Fb) being larger than 35 nm and 90 nm or less, and a ratio (Fa/Fb) of a detection frequency (Fa) that corresponds to a particle size (Da) of larger than 90 nm and 100 nm or less to the detection frequency (Fb) being 0.5 or less when measuring a particle size distribution of the chemical mechanical polishing aqueous dispersion by a dynamic light scattering method.

Abstract: A method of chemical mechanical polishing a surface of a substrate including the step of: contacting the substrate and a composition including a plurality of colloidal silica particles having less than 200 ppb of each trace metal impurity, excluding potassium and sodium, have less than 2 ppm residual alcohol and wherein the cumulative concentration of the trace metal, excluding potassium and sodium, is in the range from about 0.5 to about 5 ppm; and a medium for suspending the particles; wherein the composition is an ultrapure colloidal silica dispersion; and wherein the contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.

Abstract: An additive containing a hexafluorosilicic acid solution (H2SiF6+H2O) is sequentially inputted into a phosphoric acid solution pooled in an immersion bath from an additive input mechanism. Further, a trap agent containing a fluoroboric acid solution (HBF4+H2O) is inputted into the phosphoric acid solution from a trap agent input mechanism. F? which accelerates etching of a silicon nitride film is added as appropriate by sequentially inputting the additive and siloxane which increases by the sequential input is etched with hydrofluoric acid generated by decomposition of the fluoroboric acid, to thereby suppress a significant increase in the concentration of siloxane. This makes it possible to maintain respective initial etching rates of the silicon nitride film and a silicon oxide film.

Abstract: Afforded are a polishing agent, and a compound semiconductor manufacturing method and semiconductor device manufacturing method utilizing the agent, whereby the surface quality of compound semiconductor substrates can be favorably maintained, and high polishing rates can be sustained as well. The polishing agent is a polishing agent for Ga?In(1-?)As?P(1-?) (0???1; 0???1) compound semiconductors, and includes an alkali metal carbonate, an alkali metal organic salt, a chlorine-based oxidizer, and an alkali metal phosphate, wherein the sum of the concentrations of the alkali metal carbonate and the alkali metal organic salt is between 0.01 mol/L and 0.02 mol/L, inclusive. The compound semiconductor manufacturing method comprises a step of preparing a Ga?In(1-?)As?P(1-?) (0???1; 0???1) compound semiconductor, and a step of polishing the face of the compound semiconductor utilizing an aforedescribed polishing agent.

Abstract: To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. A polishing composition comprising abrasive grains, a processing accelerator, a dishing inhibitor and water. Here, the abrasive grains comprise at least first abrasive grains and second abrasive grains; the ratio of an average primary particle size DL1 of the second abrasive grains to an average primary particle size DS1 of the first abrasive grains, DL1/DS1, is 5>DL1/DS1>1; the degree of association of the first abrasive grains is from 1.8 to 5; and the degree of association of the second abrasive grains is at most 2.5.

Abstract: A slurry composition for chemical mechanical polishing, including 0.1% to 20% by weight of an aminosilane-surface treated polishing agent; 0.001% to 5% by weight of an additive selected from amino acids, amino acid derivatives, salts thereof, and combinations thereof; 0.0001% to 0.5% by weight of a corrosion inhibitor; and 0.01% to 5% by weight of an oxidizing agent, with the balance being a solvent, is provided. The slurry composition for chemical mechanical polishing has a conspicuously high polishing rate for silicon oxide films, is capable of selectively preventing the removal of silicon nitride films, does not cause an imbalance in polishing, gives an excellent degree of planarization, has excellent stability over time and dispersion stability, causes less generation of particles and scratches, and produces very satisfactory polished surfaces of barrier metal films and oxide films.

Abstract: The present invention provides a polishing liquid composition for a magnetic disk substrate that can reduce residual inorganic particles and scratches without loss of productivity and a method of producing a magnetic disk substrate using the polishing liquid composition. The polishing liquid composition contains inorganic particles, a diallylamine polymer, an acid and water, the diallylamine polymer includes one or more constitutional units selected from those represented by the following general formulas (I-a), (I-b), (I-c) and (I-d), and the content of the diallylamine polymer in the polishing liquid composition is 0.008 to 0.

Abstract: An etching composition for preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NH4F), an alkyl ammonium fluoride (ReNH3F; where Re is a C1-C10 linear or branched alkyl radical), a surfactant, an alcohol compound, and water. The composition can effectively suppress the leaning phenomenon of capacitors during the formation of the capacitors, so that height of the storage node of the capacitor can be secured, capacitors with improved capacitance can be manufactured, and the process can be adapted to the production of both present and future devices.

Abstract: The present invention relates to a method for producing of electronic grade aqueous ammonium fluoride solution. The industrial grade liquid ammonia is used as the raw material, when it is heated, the ammonia gas will be released. The organic gas impurities in the ammonia gas are removed by activated charcoal, and the oxygen is removed by deoxidizer, and then the high-purity ammonia gas is gotten. The high-purity hydrofluoric acid absorbs and reacts with the high-purity ammonia gas to obtain the electronic grade aqueous ammonium fluoride solution. The product has high-purity and stable quality, and it can be used in producing of electronic products directly. The method for producing of electronic grade ammonium aqueous fluoride solution provided by the present invention is suitable for continuous production on a large scale because of its simple operation.

Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.

Abstract: An ultrapure colloidal silica dispersion comprising colloidal silica particles having a mean or aggregate particle size from about 10 to about 200 nm, wherein the colloidal silica dispersion has less than 200 ppb, of each trace metal impurity disposed therein, excluding potassium and sodium, and have less than 2 ppm residual alcohol. A method for producing and using the same is also disclosed.

Abstract: An etchant gas and a method for removing at least a portion of a late transition metal structure. The etchant gas includes PF3 and at least one oxidizing agent, such as at least one of oxygen, ozone, nitrous oxide, nitric oxide and hydrogen peroxide. The etchant gas provides a method of uniformly removing the late transition metal structure or a portion thereof. Moreover, the etchant gas facilitates removing a late transition metal structure with an increased etch rate and at a decreased etch temperature. A method of removing a late transition metal without removing more reactive materials proximate the late transition metal and exposed to the etchant gas is also disclosed.

Abstract: A CMP composition and associated method are provided that afford good corrosion protection and low defectivity levels both during and subsequent to CMP processing. This composition and method are useful in CMP (chemical mechanical planarization) processing in semiconductor manufacture involving removal of metal(s) and/or barrier layer material(s) and especially for CMP processing in low technology node applications.

Abstract: A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers.

Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.

Abstract: The present invention relates to a method for treating copper or copper alloy surfaces for tight bonding to polymeric substrates, for example solder masks found in multilayer printed circuit boards. The substrate generally is a semiconductor-device, a lead frame or a printed circuit board.

Abstract: A method for removing (e.g., etching) different dielectric materials from a semiconductor substrate includes exposing the semiconductor substrate to a solution at temperatures below and at or above a set threshold. Below the threshold temperature, the solution removes one dielectric material (e.g., silicon nitride) faster than it removes another, different dielectric material (e.g., silicon oxide). At or above the threshold temperature, the selectivity of the solution is reversed.

Abstract: A polishing agent of the invention comprises tetravalent metal hydroxide particles, a cationized polyvinyl alcohol, at least one type of saccharide selected from the group consisting of an amino sugar, a derivative of the amino sugar, a polysaccharide containing an amino sugar and a derivative of the polysaccharide, and water. The method for polishing a substrate of the invention comprises a step of polishing the silicon oxide film 1 (film to be polished), formed on the silicon substrate 2 having the silicon oxide film 1, by relatively moving the silicon substrate 2 and a polishing platen, in a state that the silicon oxide film 1 is pressed against a polishing pad on the polishing platen, while supplying the polishing agent of the invention between the silicon oxide film 1 and the polishing pad.

Abstract: Highly alkaline, aqueous formulations including (a) water, (b) at least one metal ion-free base at sufficient amounts to produce a final formulation alkaline pH, (c) from about 0.01% to about 5% by weight (expressed as % SiO2) of at least one water-soluble metal ion-free silicate corrosion inhibitors; (d) from about 0.01% to about 10% by weight of at least one metal chelating agent, and (e) from more than 0 to about 2.0% by weight of at least one oxymetalate are provided in accordance with this invention. Such formulations are combined with a peroxide such that a peroxymetalate is formed to produce form a microelectronic cleaning composition. Used to remove contaminants and residue from microelectronic devices, such as microelectronic substrates.

Abstract: The present invention comprises a compound of a compound of Formula 1 wherein Rf is a C2 to C12 perfluoroalkyl optionally interrupted by one to four moieties each independently selected from the group consisting of —CH2—, —O—, —S—, —S(O)—, and —S(O)2—; n is 1 to 6; m is 0 to 2, provided that m is less than or equal to n. X and Y are each independently O or NR, R is hydrogen or C1 to C6 alkyl; R1, and R2 are each independently C1 to C6 alkyl, optionally containing one or more oxygen atoms and may form a ring selected from the group of piperidine, pyrrolidine, and morpholine; and R3 is O?, (CH2)pC(O)O?, (CH2)pCH(OH)(CH2)SO3?, and (CH2)qSO3?; p is 1 to 4; and q is 2 to 4 which is useful as a surfactant.

Abstract: An etching liquid for texturing a silicon wafer surface is provided. The etching liquid may include an aqueous solution of at least one alkaline etching agent and at least one polysaccharide or derivative thereof. Also provided is a process for texture etching a silicon wafer using the etching liquid of the invention.

Abstract: In an etching composition for an under-bump metallurgy (UBM) layer and a method of forming a bump structure, the etching composition includes about 40% by weight to about 90% by weight of hydrogen peroxide (H2O2), about 1% by weight to about 20% by weight of an aqueous basic solution including ammonium hydroxide (NH4OH) or tetraalkylammonium hydroxide, about 0.01% by weight to about 10% by weight of an alcohol compound, and about 2% by weight to 30% by weight of an ethylenediamine-based chelating agent. The etching composition may effectively etch the UBM layer including titanium or titanium tungsten and remove impurities. A method of forming a bump structure may employ such an etching composition.

Abstract: Disclosed is a method for directly preparing cerium oxide powder in a solution phase by a) mixing a cerium precursor solution with a precipitant solution to cause a reaction; and b) performing oxidation treatment of the reacted solution, wherein at least one kind of pure organic solvent containing no water is used as a solvent for the cerium precursor solution as well as the precipitant solution to thereby prepare the cerium oxide powder, the particle size of which is adjusted to 50 nm to 3 ?m. Cerium oxide powder obtained from the method and CMP slurry comprising the cerium oxide powder as a polishing agent are also disclosed.

Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefore easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

Abstract: Coated film is removed at an outer peripheral edge of a substrate before heat-treating in CSD method by spraying or dropping liquid for removing CSD coated film including water and organic solvent mixed in a weight ratio of 50:50 to 0:100, in which the organic solvent is one or more selected from the group consisting of ?-diketones, ?-ketoesters, polyhydric alcohol, carboxylic acids, alkanolamines, ?-hydroxy carboxylic acid, ?-hydroxy carbonyl derivatives, and hydrazone derivatives.

Abstract: Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms an adsorption layer on the cationically charged material in order to increase polishing selectivity of the anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

Abstract: The present invention relates to a slurry for chemical mechanical polishing, comprising an abrasive; an oxidant; an organic acid; and a polymeric additive comprising polyolefin-polyalkyleneoxide copolymer, wherein the polyolefin-polyalkyleneoxide copolymer comprises a polyolefin repeat unit and two or more polyalkyleneoxide repeat units, and at least one polyalkyleneoxide repeat unit is branched.

Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.

Abstract: The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen peroxide, and water. Water is present in the mixture in an amount of greater than 90% by volume of the entire mixture. The present disclosure also provides a method of making such a chemical etchant. The method includes mixing, in any order, a halogen-containing acid and hydrogen peroxide to provide a halogen-containing acid/hydrogen peroxide mixture, and adding water to the halogen-containing acid/hydrogen peroxide mixture. Also disclosed is a method of etching a Ge or Ge-rich SiGe alloy utilizing the chemical etchant of the present application.

Abstract: A chemical mechanical polishing aqueous dispersion includes (A) abrasive grains having a pore volume of 0.14 ml/g or more, and (B) a dispersion medium.

Abstract: Use of certain hydrofluoroalkenes for foam blowing, solvent cleaning, refrigeration, as etching gas for semiconductor etching or chamber cleaning, heat transfer, fire extinguishing and for the production of aerosols.

Abstract: Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film from which material is removed. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed.

Abstract: Aqueous dispersion comprising cerium oxide and silicon dioxide, obtainable by first mixing a cerium oxide starting dispersion and a silicon dioxide starting dispersion while stirring, and then dispersing at a shear rate of 10000 to 30000 s?1, wherein a) the cerium oxide starting dispersion—contains 0.5 to 30% by weight of cerium oxide particles as the solid phase, —a d5o of the particle size distribution of 10 to 100 nm—and has a pH of 1 to 7, and b) the silicon dioxide starting dispersion—contains 0.1 to 30% by weight of colloidal silicon dioxide particles as the solid phase, has a d5o of the particle size distribution of 3 to 50 nm and has a pH of 6 to 11.5, d) with the proviso that the d5o of the particle size distribution of the cerium oxide particles is greater than that of the silicon dioxide particles, the cerium oxide/silicon dioxide weight ratio is >1 and the amount of cerium oxide starting dispersion is such that the zeta potential of the dispersion is negative.

Abstract: Disclosed is a polishing composition containing not less than 1 wt % of a water-soluble resin, which is obtained by polymerizing a vinyl monomer containing an amino group and/or an amide group, based on the total weight of the polishing composition.

Abstract: Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process.

Abstract: A method and composition for scale removal and leak detection is disclosed. The composition comprises a scale-removal agent and a fluorescing agent.