Abstract: A composition for polishing surfaces comprises the following components: a) at least one inorganic abrasive component (S) comprising a lanthanide oxide, b) at least one organic dispersing-agent component based on polymer (P), c) at least one organic gelling agent (G) such as gellan gum, d) water as solution or dispersing medium, and e) if appropriate further auxiliary and additive materials and has high stability.

Abstract: Disclosed is a chemical-mechanical polishing composition used in a process for chemical-mechanical polishing of silicon oxide layer having severe unevenness with large step-height. The composition includes abrasive particles of metal oxide; and at least one compound(s) selected from the group consisting of amino alcohols, hydroxycarboxylic acid having at least 3 of the total number of carboxylic acid group(s) and hydroxyl group(s) or their salts, or a mixture thereof. A polymeric organic acid, a preservative, a lubricant and a surfactant may be further contained. The composition shortens the vapor-deposition time of a layer to be polished, saves the raw material to be vapor-deposited, shortens the chemical-mechanical polishing time, and saves the slurry employed.

Abstract: The present invention relates to doped ceria (CeO2) abrasive particles, having an essentially octahedral morphology. Such abrasives are used in water-based slurries for Chemical Mechanical Polishing (CMP) of subrates such as silicon wafers. The invention more particularly concerns yttrium-doped ceria particles having a specific surface area of 10 to 120 m2/g, characterized in that at least 95 wt %, preferably at least 99 wt %, of the particles are mono-crystalline and in that the particles' surfaces consist of more than 70%, preferably of more than 80%, of planes parallel to {111} planes. A novel gas phase process for synthesizing this product is also disclosed, comprising the steps of providing a hot gas stream, —and, introducing into said gas stream a cerium-bearing reactant, a dopant-bearing reactant, and an oxygen-bearing reactant, —the temperature of said gas stream being chosen so as to atomize said reactant, the reactant being selected so as to form, upon cooling, doped ceria particles.

Abstract: Disclosed herein are a chemical mechanical polishing slurry composition for chemical mechanical planarization of metal layers, which comprises a non-ionized, heat-activated nano-catalyst, and a polishing method using the same. The polishing slurry composition comprises: a non-ionized, heat-activated nano-catalyst which releases electrons and holes by energy generated in a chemical mechanical polishing process; an abrasive; and an oxidizing agent. The non-ionized, heat-activated nano-catalyst and the abrasive are different from each other, and the non-ionized, heat-activated nano-catalyst is preferably a semiconductor material which releases electrons and holes at a temperature of 10 to 100° C. in an aqueous solution state, more preferably a transition metal silicide selected from the group consisting of CrSi, MnSi, CoSi, ferrosilicon (FeSi), mixtures thereof, and most preferably, a semiconductor material such as nano ferrosilicon.

Abstract: Disclosed herein are a chemical mechanical polishing slurry composition for chemical mechanical planarization of metal layers, which comprises a non-ionized, heat-activated nano-catalyst, and a polishing method using the same. The polishing slurry composition comprises: a non-ionized, heat-activated nano-catalyst which releases electrons and holes by energy generated in a chemical mechanical polishing process; an abrasive; and an oxidizing agent. The non-ionized heat-activated nano-catalyst and the abrasive are different from each other, and the non-ionized, heat-activated nano-catalyst is preferably a semiconductor material which releases electrons and holes at a temperature of 10 to 100° C. in an aqueous solution state, more preferably a transition metal silicide selected from the group consisting of CrSi, MnSi, CoSi, ferrosilicon (FeSi), mixtures thereof, and most preferably, a semiconductor material such as nano ferrosilicon.

Abstract: There is provided an abrasive used for polishing a substrate which comprises silica as a main component, for example a rock crystal, a quartz glass for photomask, for CMP of an organic film, Inter Layer Dielectric (ILD) and shallow trench isolation of a semiconductor device, or for polishing a hard disk made of glass. A sol which particles are dispersed in a medium, wherein the particles have a particle size of 0.005 to 1 ?m and comprise as a main component crystalline cerium oxide of the cubic system and as an additional component a lanthanum compound, a neodymium compound or a combination thereof, wherein the additional component is contained in X/(Ce+X) molar ratio of 0.001 to 0.5 in which X is lanthanum atoms, neodymium atoms or a combination thereof.

Abstract: Taught herein is an aqueous chemical-mechanical polishing slurry, a method for manufacturing the same, and a method for using the same in the preparation of high precision finishing of a sapphire surface. The slurry comprises a chelating agent having 13 chelate rings, a strong propensity for complexation with aluminum ions and for forming a water-soluble chelate product. The removal rate can reach 10-16 ?m/h, and the roughness can be reduced to 0.1 nm. The slurry components and their weight percentages are as follows: silica sol from about 1 wt. % to about 90 wt. %, alkali modifier from about 0.25 wt. % to about 5 wt. %, ether-alcohol activator from 0.5 wt. % to about 10 wt. %, chelating agent from about 1.25 wt. % to about 15 wt. %, and deionized water. Using such a slurry, high precision finishing of a sapphire surface can be achieved under relevant polishing conditions, which can satisfy the finishing requirements for industrial sapphire substrate.

Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

Abstract: The present invention can provide a polishing liquid for CMP having good dispersion stability and a high polishing rate in polishing of interlayer insulating films and a polishing method. Disclosed a polishing liquid for CMP comprising: a medium; and colloidal silica particles dispersed in the medium, a blending amount of the colloidal silica particles being 2.0 to 8.

Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. The method includes providing a substrate comprising dielectric feature definitions, a barrier material disposed in the feature definitions, and a bulk conductive material disposed on the barrier material in an amount sufficient to fill feature definitions; polishing the substrate to substantially remove the bulk conductive material; polishing a residual conductive material to expose feature definitions, comprising: applying a first voltage for a first time period, wherein the first voltage is less than the critical voltage; and applying a second voltage for a second time period, wherein the second voltage is greater than the critical voltage.

Abstract: The present invention provides a process of etching or plating comprising the steps of: i) ink jet printing an alkali removeable water insoluble hot melt ink jet ink onto a substrate to form a resist image; ii) etching or plating the substrate in an aqueous acid medium; and iv) removing the resist image with an aqueous alkali.

Abstract: The present invention is directed to a microetching composition comprising a source of cupric ions, acid, a nitrile compound, and a source of halide ions. Other additive, including organic solvents, a source of molybdenum ions, amines, polyamines, and acrylamides may also be included in the composition of the invention. The present invention is also directed to a method of microetching copper or copper alloy surfaces to increase the adhesion of the copper surface to a polymeric material, comprising the steps of contacting a copper or copper alloy surface with the composition of the invention, and thereafter bonding the polymeric material to the copper or copper alloy surface.

Abstract: Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high. The slurry and the method are a polishing slurry, for metal films, comprising abrasive grains, a methacrylic acid based polymer and water, and a polishing method using the slurry, respectively.

Abstract: To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a semiconductor integrated circuit device. A chemical mechanical polishing composition for polishing a surface to be polished of a semiconductor integrated circuit device comprises (A) fine oxide particles, (B) pullulan, and (C) water. The polishing composition further contains (D) an oxidizing agent, and (E) a compound represented by the formula 1: wherein R is a hydrogen atom, a C1-4 alkyl group, a C1-4 alkoxy group or a carboxylic acid group.

Abstract: A cerium salt wherein, when 20 g of the cerium salt is dissolved in a mixed liquid of 12.5 g of 6N nitric acid and 12.5 g of a 30% hydrogen peroxide aqueous solution, a concentration of an insoluble component present in the solution is 5 ppm or less by mass ratio to the cerium salt before dissolution and cerium oxide produced by processing the cerium salt at high temperatures. Scratch on a surface to be polished can be reduced when a cerium based polishing slurry containing the cerium oxide particles is used, since an amount of impurities in cerium oxide particles and cerium salt particles, raw material thereof, is reduced for high purification.

Abstract: A method for manufacturing a liquid crystal display includes simultaneously forming a gate electrode and a gate bus line on a transparent dielectric substrate, simultaneously forming a channel layer, an ohmic contact layer, and source/drain electrodes by forming a gate insulation film, an amorphous silicon film, a doped amorphous silicon film, and a metal film on the transparent dielectric substrate on which the gate electrode and the gate bus line are formed and etching the metal film, the amorphous silicon film, and the doped amorphous silicon film, and forming a pixel electrode by forming a protective film and a transparent metal film on the transparent dielectric substrate upon which the source/drain electrodes are formed and finely etching the transparent metal film through a lift-off process using a stripper solution.

Abstract: Disclosed herein are processes for making a consolidated or densified composite article comprising polymer, particularly fluoropolymer, and oriented carbon fiber, which provides suitability for use in chemical-mechanical applications.

Abstract: A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.

Abstract: A method for forming an organic mask, includes: permeating an organic solvent into an organic pattern formed on a base film and containing at least one kind of organic material, by contacting the organic pattern with the organic solvent; and thereby, partially or entirely decreasing original adhesion strength between the base film and the organic pattern. A heat treatment may be conducted after contacting to adjust the adhesion strength. Using the organic pattern as a mask, isotropic etching is conducted. As a result, a desired taper angle of the etched base film can be achieved with high accuracy. The taper angle of the etched base film is adjustable by controlling the adhesion strength through the heat treatment.

Abstract: The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.

Abstract: An additive composition for a slurry contains a first salt of polymeric acid including a first polymeric acid having a first weight average molecular weight and a first base material, and a second salt of polymeric acid including a second polymeric acid having a second weight average molecular weight and a second base material. A slurry composition is prepared by mixing the additive composition, a polishing particle composition, and water. When implementing a chemical mechanical polishing using the slurry composition, a favorable polishing selectivity is realized.

Abstract: Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates.

Abstract: To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a semiconductor integrated circuit device. A chemical mechanical polishing composition for polishing a surface to be polished of a semiconductor integrated circuit device comprises (A) fine oxide particles, (B) pullulan, and (C) water. The polishing composition further contains (D) an oxidizing agent, and (E) a compound represented by the formula 1: wherein R is a hydrogen atom, a C1-4 alkyl group, a C1-4 alkoxy group or a carboxylic acid group.

Abstract: The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.

Abstract: Provided is an etching solution composition for selectively etching a metal film, which is composed of Al, Al alloy or the like and is arranged on an amorphous oxide film, from a laminated film including the metal film and an amorphous oxide film of various types. The etching solution composition is used for selectively etching the metal film from the laminated film which includes the amorphous oxide film and the metal film composed of Al, Al alloy, Cu, Cu alloy, Ag or Ag alloy, and is composed of an aqueous solution containing an alkali.

Abstract: The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.

Abstract: An etchant includes hydrogen peroxide (H2O2), and a mixed solution including at least one of an organic acid, an inorganic acid, and a neutral salt.

Abstract: A dispersion comprising particles of cerium oxide and sheet silicate, where—the zeta potential of the sheet silicate particles is negative and that of the cerium oxide particles is positive or equal to zero, and the zeta potential of the dispersion is negative overall, —the mean diameter of the cerium oxide particles is not more than 200 nm sheet silicate particles is less than 100 nm, —the proportion, based in each case on the total amount of the dispersion, of cerium oxide particles is from 0.1 to 5% by weight sheet silicate particles is from 0.01 to 10% by weight and—the pH of the dispersion is from 3.5 to <7.5.

Abstract: The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, a complexing agent, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Abstract: The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.

Abstract: The present disclosure relates to a solution for selectively removing metal, such as Ta or TaN, from a substrate, such as an aluminum containing substrate. The solution comprises an acid, such as HF or buffered HF, an ingredient comprising a fluorine ion, such as ammonium fluoride (NH4F), ethylene glycol, and water. A method of selectively removing metal from a substrate using this solution is also disclosed.

Abstract: A method for producing potassium-doped pyrogenic oxides involves mixing a gaseous mixture including a pyrogenic oxide precursor and an aqueous aerosol containing a potassium salt to form an aerosol-gaseous mixture which is then reacted in a flame under conditions suitable for producing pyrogenic oxides by flame oxidation or flame hydrolysis to form the potassium-doped pyrogenic oxides product. The particle product is spherical, has a BET surface between 1 and 1000 m2/g and a narrow distribution of particle size of at least 0.7. The doped oxides can be used as polishing material (CMP application).

Abstract: Composition and processes to prepare a polishing medium to be used in chemical and mechanical polishing applications.

Abstract: A polishing slurry comprises a metal-oxidizing agent, a metal anticorrosive agent, an oxidized metal dissolving agent and water. The oxidized metal dissolving agent is at least one kind selected from the group consisting of an acid in which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.5 or more, an ammonium salt of the acid and an organic acid ester of the acid. The pH of the polishing slurry is within the range of 3 to 4. The concentration of the metal-oxidizing agent is within the range of 0.01 to 3 percent by weight. In the wiring-formation process of the semiconductor device, the conductor used for the barrier layer can be polished at a high polishing rate by using the polishing slurry having the low polishing particle concentration and the low metal anticorrosive agent concentration.

Abstract: A slurry composition for a chemical mechanical polishing process and a method of manufacturing a semiconductor memory device using the slurry composition are provided. The slurry composition may include about 0.001 percent by weight to about 5 percent by weight of a ceria abrasive, about 0.001 percent by weight to about 0.1 percent by weight of a nonionic surfactant adsorbed onto a polysilicon layer forming a passivation layer on the polysilicon layer, the nonionic surfactant having a chemical structure of a triblock copolymer including a first polyethylene oxide block, a polypropylene oxide block and a second polyethylene oxide block and a remainder of water.

Abstract: The present invention provides an etchant composition suitable for etching metals Cu/Mo, wherein the composition comprises 1 to 25 wt % of hydrogen peroxide on the basis of the total weight of the composition; 0.1 to 15 wt % of amino acid on the basis of the total weight of the composition; 0.1 to 15 wt % of a pH stabilizer on the basis of the total weight of the composition; 0.01 to 2 wt % of fluorine-containing acid on the basis of the total weight of the composition; 0.01 to 3 wt % of an acidic pH adjuster on the basis of the total weight of the composition; and an aqueous medium. The present invention also provides a process for etching metals Cu/Mo with the etchant composition of the present invention.

Abstract: A polishing composition contains a nitrogen-containing compound and abrasive grains, and the pH of the composition is in the range of 1 to 7. The nitrogen-containing compound in the polishing composition preferably has a structure expressed by a formula: R1—N(—R2)—R3 in which R1, R2, and R3 each represent an alkyl group with or without a characteristic group, two of R1 to R3 may form a part of a heterocycle, and two of R1 to R3 may be identical and form a part of a heterocycle with the remaining one. Alternatively, the nitrogen-containing compound is preferably selected from a group consisting of a carboxybetaine type ampholytic surfactant, a sulfobetaine type ampholytic surfactant, an imidazoline type ampholytic surfactant, and an amine oxide type ampholytic surfactant. A polishing composition may contain a water-soluble polymer and abrasive grains, and the pH of the composition is in the range of 1 to 8.

Abstract: The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with a quanternary ammonium structure, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms in of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.

Abstract: According to an aspect of the invention, there is provided a polishing liquid for polishing a barrier metal material on an interlayer insulation material, the polishing liquid having a pH of from 2.0 to 6.0 and including an aqueous solution containing a compound represented by the following formula (1), and polishing particles containing silicon oxide and dispersed in the aqueous solution: R1—(CH2)m—(CHR2)n—COOH (1) wherein m+n?4; R1 represents a hydrogen atom, a methyl group, an ethyl group or a hydroxyl group; R2 represents a methyl group, an ethyl group, a benzene ring or a hydroxyl group; and when a plurality of R2s are present in the formula (1), they are the same or different from one another.

Abstract: A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.

Abstract: A polishing composition that can improve polishing property without foaming is provided. A polishing composition includes a pH regulator, a water-soluble polymer compound, and a compound containing an alkylene diamine structure having two nitrogens represented by the following general formula (1), and having at least one block type polyether bonded to the two nitrogens of the alkylene structure, the block type polyether having a bond of an oxyethylene group and an oxypropylene group: where R represents an alkylene group represented by CnH2n, in which n is an integer of 1 or more.

Abstract: The present invention relates to a novel printable etching medium having non-Newtonian flow behavior for the etching of surfaces in the production of solar cells and to the use thereof. In particular, the invention relates to corresponding particle-containing compositions by means of which extremely fine structures can be etched very selectively without damaging or attacking adjacent areas.

Abstract: Surface texturing of the transparent conductive oxide (TCO) front contact of a thin film photovoltaic (TFPV) solar cell is needed to enhance the light-trapping capability of the TFPV solar cells and thus improving the solar cell efficiency. Embodiments of the current invention describe chemical formulations and methods for the wet etching of the TCO. The formulations and methods may be optimized to tune the surface texturing of the TCO as desired.

Abstract: The invention concerns processes and solutions for the treatment of copper alloy surfaces, which are subsequently to be firmly bonded to polymeric material. The solution is used, in particular for firmly bonding lead frames to encapsulating molding compounds (polymeric material). The solution contains an oxidant, at least one acid, at least one adhesion-enhancing compound characterized in that the solution additionally contains fluoride ions in an amount of at least 100 mg per litre and chloride ions in an amount of 5 to 40 mg per litre. The solution is particularly useful for treatment of copper alloy surfaces, containing alloying elements selected from the group consisting of Si, Ni, Fe, Zr, P, Sn and Zn.

Abstract: The invention relates to the use of gluconates in the production of semiconductor wafers, preferably in the polishing of the semiconductor wafers during the production process, and to a polishing agent based on an abrasive substance and/or colloid and a mixture of disuccinates or methylglycine diacetic acid (MGDA) and gluconates.

Abstract: An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 ?m on a surface. The maximum length of the resin particles is not more than 5 ?m and is 2.5 to 25 times as large as the curvature radius.

Abstract: A liquid etching composition comprising: (a) at least one etching agent precursor having an activation temperature of at least 400° C., at which temperature said precursor yields an active agent suitable for chemical etching of glass, said precursor present at a concentration of at least 2.5% w/w; (b) a binder; and (c) a liquid vehicle.

Abstract: In an embodiment of the present invention, a device includes a first etched feature located in a critical dimension scanning electron microscope (CD-SEM) characterization location, the first etched feature having an upper section, a middle section, and a lower section wherein the middle section is severely shrunk relative to a corresponding middle section of a second etched feature having similar dimensions and composition that is not located in a CD-SEM characterization location. In another embodiment of the present invention, the middle section of the first etched feature has a shrinkage carryover exceeding a threshold. In still another embodiment of the present invention, the middle section of the first etched feature exhibits a line edge roughness.

Abstract: A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.

Abstract: The invention relates to a thermally curable liquid resin composition intended for manufacturing abrasives that comprises at least one epoxy resin comprising at least two epoxy groups and at least one reactive diluent, said composition having a viscosity, at 25° C., less than or equal to 7000 mPa.s. Application of the resin composition for producing abrasive articles, especially bonded abrasives and coated abrasives. It also relates to the abrasive articles comprising abrasive grains connected by such a liquid resin composition.