Abstract: A lighting device includes a plurality of light-emitting diodes including a first light-emitting diode with a non-rectangular shape in a top view, a submount to which each of the plurality of light-emitting diodes is coupled, and a plurality of conductive elements formed between the submount and the plurality of light-emitting diodes to electrically connecting at least a portion of the plurality of light-emitting diodes with each other in series.

Abstract: Application of a wavelength conversion element is substantially independent of the fabrication of a side-emitting light emitting device. In an example embodiment, the wavelength conversion element is situated around the periphery of a non-wavelength converting lightguide that is situated above the light emitting surface. One or more specular and/or diffusing reflectors are used to direct the light in the lightguide toward the wavelength conversion element at the periphery. In another embodiment, an interference filter may be used to provide predominantly side-emitted light at interfaces between the elements of the light emitting device.

Abstract: An optoelectronic device including a semiconductor substrate including first and second opposing faces, a first set of first light-emitting diodes resting on a first portion of the substrate and including conical or frustoconical wire-like semiconductor elements, a first electrode covering each first light-emitting diode, a first conductive portion insulated from the substrate, extending through the substrate and connected to the first electrode; a second set of second light-emitting diodes resting on a second portion of the substrate and including conical or frustoconical wire-like semiconductor elements, a second electrode covering each second light-emitting diode, a second conductive portion insulated from the substrate and connected to the second electrode, and a first conductive element connecting the first conductive portion to the second portion of the substrate on the side of the second face.

Abstract: A photodetector comprising a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon; wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.

Abstract: A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

Abstract: An LED illumination device capable of disassembling, assembling and combining modules and slidably adjusting locations of modules, and corresponding control method for LED modules. The illumination device comprises a housing and LED modules. At least one slideway is arranged in the housing. The LED modules are removably arranged in any location in any slideways, the device can quickly realize multiple illumination solutions of changing luminance and illuminant colors, so that the LED illumination device can be conveniently applied to various operating environments and can be freely converted in the solutions of applying to various operating environments. Moreover, the control method for the LED modules can implement flexible and varied control on each LED module via an electrode orbit so that the LED illumination device can realize multiple preset illumination solutions, thereby achieving a landscape illumination effect.

Abstract: Embodiments of the invention include a semiconductor light emitting device. The device includes a substrate having a first surface and a second surface opposite the first surface. The device further includes a semiconductor structure disposed on the first surface of the substrate. A cavity is disposed within the substrate. The cavity extends from the second surface of the substrate. The cavity has a sloped side wall.

Abstract: A display device includes: a light emitting element including a light emitting layer and an anode and a cathode that hold the light emitting layer therebetween; and a sealing layer that seals the light emitting element. The sealing layer includes an organic layer and a first inorganic layer and a second inorganic layer that hold the organic layer from an upper side and a lower side. The organic layer is a cholesteric liquid crystal layer with a circularly polarizing function.

Abstract: A light source including a circuit board, at least one light emitting device mounted on the circuit board by flip-chip bonding or surface mount technology (SMT), and a reflective portion formed on the circuit board and enclosing the light emitting device. The reflective portion formed on the circuit board reflects light emitted from the light emitting device in one direction, to reduce light loss while focusing light in a desired direction.

Abstract: An organic light-emitting display apparatus includes an organic light-emitting device including a first electrode, an intermediate layer including a light-emitting layer, and a second electrode; an organic barrier layer on the second electrode of the organic light-emitting device and having a first side facing the organic light-emitting device and a second side facing in an opposite direction from the first side; a buffer layer contacting the second side of the organic barrier layer; and a first inorganic barrier layer on the second side of the organic barrier layer with the buffer layer therebetween, wherein a water vapor transmission rate of the buffer layer is greater than 10?2 g/(cm2·day).

Abstract: The present techniques provide a semiconductor light-emitting device in which current diffusion is ensured in a transparent electrode and light absorption by the transparent electrode is suppressed. The light-emitting device comprises an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent electrode, a transparent insulating film, and a reflection electrode. The transparent electrode contains In. The thickness of the transparent electrode is 10 nm to 150 nm. The reflection electrode is a p-type electrode. The reflection electrode P1 has a plurality of contact electrodes being in contact with the transparent electrode at a plurality of openings. The number density of the contact electrodes is 400/mm2 to 1,000/mm2.

Abstract: An LED module includes: a substrate having a main surface and a back surface which face in opposite directions from each other in a thickness direction; a first LED chip including a first electrode pad bonded to a surface facing the same direction as the main surface; a first wire having one end bonded to the first electrode pad; and a wiring pattern having a main surface electrode formed in the main surface, wherein the main surface electrode includes a first die pad portion which supports the first LED chip, and when viewed from the thickness direction, the first die pad portion includes a main pad portion to which the first LED chip is bonded and an auxiliary pad portion which protrudes from the main pad portion in a direction toward a position of the first electrode pad from the center position in the first LED chip.

Abstract: The invention relates to a display device, comprising a layer stack, which comprises a semiconductor layer sequence having an active region for producing radiation and comprises a circuit layer. The semiconductor layer sequence forms a plurality of pixels. For each pixel, a respective switch connected in an electrically conductive manner to the pixel is formed in the circuit layer. The invention further relates to a method for producing a display device.

Abstract: A packaged LED module includes an LED die mounted on a substrate surface. Formed on the substrate surface and surrounding the die is a first layer of a low index of refraction material. A lens of a higher index of refraction material is molded over the LED die and the first layer. The interface of the lens and the first layer reflects light by total internal reflection (TIR), in accordance with Snell's Law, when the LED light impinges at greater than the critical angle. The first layer may be a low index epoxy, silicone, or other material. In another embodiment, a layer surrounding the LED die is processed after the lens is formed to create an air/lens interface for TIR. The LED die may include a phosphor layer, which results in even more side light being reflected off the interface and not absorbed by the substrate surface.

Abstract: Provided herein are metal halide perovskites that may have a 0D crystal structure, and may be lead free. Also provided are methods for making the metal halide perovskites, including methods for making bulk crystals or micro crystals. Devices, such as optoelectronic devices, also are provided that include one or more of the metal halide perovskites. A metal halide perovskite may be a light emitting material in the devices.

Abstract: An organic light emitting display device capable of having an electrostatic capacitive type touch panel function without substantially increasing the thickness of the display device and/or including a touch panel with an improved interface between a touch panel module of the touch panel and a touch panel drive integrated circuit (IC) of the touch panel.

Abstract: Disclosed is a light emitting device package including a body including a recess, first and second electrodes disposed on the body, a light emitting device provided on the first electrode, and a molding part disposed on the light emitting device. At least one of the body and the molding part includes benzotriazol (BTA).

Abstract: A display apparatus, including a substrate; a display unit on the substrate; a bonding member on the substrate and surrounding at least edges of the display unit; and a barrier film on the substrate, the bonding member interposed between the substrate and the barrier film, the bonding member including a core-shell structure, including a core including an oxide, and a shell including a polymer chemically bonded to the core.

Abstract: The present technology relates to a semiconductor apparatus, a solid state imaging device, an imaging apparatus and electronic equipment which realize a smaller and thinner size and which enable improvement of optical characteristics, and a manufacturing method thereof. A side electrode 16c is formed on a side face of a substrate on which an imaging device 16 is formed. By this side electrode 16c being connected to an electrode pad 15b on the substrate 15 through a chip wiring 17 formed with solder, the imaging device 16 is electrically connected to the substrate 15. By this means, because it is possible to electrically connect the imaging device 16 to the substrate 15 without using wire bonding, space required for wire bonding is not required, so that it is possible to realize a smaller and thinner apparatus. The present technology can be applied to an imaging apparatus.

Abstract: A method of manufacturing a light emitting device includes injecting liquid or pasty transparent resin into a sheet forming mold, adding a phosphor to the resin in the mold, centrifugally rotating the mold so as to settle the phosphor included in the resin toward one surface side of the resin, thermally curing the resin so as to form a phosphor sheet, the phosphor sheet including a phosphor layer formed on the one surface side of the resin and a transparent layer formed on an other surface side of the resin, overlaying the phosphor sheet on a light emitting element such that the phosphor layer of the phosphor sheet contacts with a light emitting surface of the light emitting element, mounting the light emitting element with the phosphor sheet overlaid on a board, and flattening a surface of the transparent layer of the phosphor sheet on the light emitting element.

Abstract: An LED module A1 includes an LED chip 1, a lead group 4 including a lead 4A on which the LED chip 1 is mounted and a lead 4B spaced apart from the lead 4A, a resin package 2 covering part of the lead group 4, and mounting terminals 41 and 42 provided by part of the lead group 4 that is exposed from the resin package 2 and spaced apart from each other in direction x. The LED module further includes a mounting terminal 43 spaced apart from the mounting terminal 41 in direction y, and a mounting terminal 44 spaced apart from the mounting terminal 42 in direction y. This arrangement allows the LED module A1 to be mounted at a correct position on a circuit board.

Abstract: A composition useful for altering the wavelength of visible or invisible light is disclosed. The composition comprising a solid host material and quantum confined semiconductor nanoparticles, wherein the nanoparticles are included in the composition in amount in the range from about 0.001 to about 15 weight percent based on the weight of the host material. The composition can further include scatterers. An optical component including a waveguide component and quantum confined semiconductor nanoparticles is also disclosed. A device including an optical component is disclosed. A system including an optical component including a waveguide component and quantum confined semiconductor nanoparticles and a light source optically coupled to the waveguide component is also disclosed. A decal, kit, ink composition, and method are also disclosed. A TFEL including quantum confined semiconductor nanoparticles on a surface thereof is also disclosed.

Abstract: The present application relates to a cured product and the use thereof. When the cured product, for example, is applied to a semiconductor device such as an LED or the like, the decrease in brightness may be minimized even upon the long-term use of the device, and since the cured product has excellent cracking resistance, the device having high long-term reliability may be provided. The cured product has excellent processability, workability, and adhesive properties or the like, and does not cause whitening and surface stickiness, etc. Further, the cured product exhibits excellent heat resistance at high temperature, gas barrier properties, etc. The cured product may be, for example, applied as an encapsulant or an adhesive material of a semiconductor device.

Abstract: Provided are a surface-modified metal oxide particle dispersion liquid and the like including surface-modified metal oxide particles that are dispersed in a dispersion medium, the surface-modified metal oxide particles being obtained by modifying surfaces of metal oxide particles to have hydrosilyl groups, hydrophobic functional groups, and silanol groups. In the surface-modified metal oxide particle dispersion liquid, a ratio of the hydrosilyl groups to the silanol groups is 5:95 or higher and 50:50 or lower.

Abstract: A light emitting device includes a light emitting element, a ceramic substrate including a mounting surface on which the light emitting element is mounted, and a non-mounting surface opposite to the mounting surface and on which the light emitting element is not mounted, and a metal reflection film formed on the non-mounting surface. The metal reflection film reflects light from light emitting element that has passed through the ceramic substrate.

Abstract: A lead frame structure of a light emitting diode includes a ceramic bed, a metal layer and a plastic seat. The metal layer has a first metal circuit area, a second metal circuit area, a gap dividing the first metal circuit area and the second metal circuit area, and a metal ring surrounding the first metal circuit area, the second metal circuit area and the gap. The plastic seat has a hollow function area. The first metal circuit area, the second metal circuit area and a part of the metal ring expose the function area to make the metal (circuit) layer of the function area has no gap to avoid excess glue. This can efficiently accomplish to increase intensity, quality and reliability of the packaged products.

Abstract: A light-emitting diode (LED) lamp is provided that includes: an LED source coupled to a housing; and a lens over the source and coupled to the housing. The lens, or a portion of the lens, includes a plurality of glass beads, each having a metal-containing coating (e.g., a coating comprising at least one of Ni, Al, Cu, In and brass) and dispersed in a polymeric matrix (e.g., an acrylic or a polycarbonate). Further, the lens has a thermal conductivity of at least about 2 W/m*K and an optical transmissivity of at least 80%.

Abstract: A luminaire comprising a heat sink, a light source and a light guide. The light source is carried by the heat sink and configured to emit a source light. The light source includes a heat spreader having an inner surface and an outer surface, and a plurality of light-emitting diodes (LEDs) carried by a circuit board and disposed generally along an outer peripheral perimeter portion of the inner surface of the heat spreader, and positioned in thermal communication with the heat spreader. The light guide includes a lens with a plurality of optical elements disposed within the lens.

Abstract: A flexible film comprising a wavelength converting material is positioned over a light source. The flexible film is conformed to a predetermined shape. In some embodiments, the light source is a light emitting diode mounted on a support substrate. The diode is aligned with an indentation in a mold such that the flexible film is disposed between the support substrate and the mold. Transparent molding material is disposed between the support substrate and the mold. The support substrate and the mold are pressed together to cause the molding material to fill the indentation. The flexible film conforms to the shape of the light source or the mold.

Abstract: Embodiments described herein generally relate to a method and apparatus for encapsulating an OLED structure, more particularly, to a TFE structure for an OLED structure. The TFE structure includes at least one dielectric layer and at least two barrier layers, and the TFE structure is formed over the OLED structure. The at least one dielectric layer is deposited by atomic layer deposition (ALD). Having the at least one dielectric layer formed by ALD in the TFE structure improves the barrier performance of the TFE structure.

Abstract: A method of forming an array of capacitors and access transistors there-above comprises forming access transistor trenches partially into insulative material. The trenches individually comprise longitudinally-spaced masked portions and longitudinally-spaced openings in the trenches longitudinally between the masked portions. The trench openings have walls therein extending longitudinally in and along the individual trench openings against laterally-opposing sides of the trenches. At least some of the insulative material that is under the trench openings is removed through bases of the trench openings between the walls and the masked portions to form individual capacitor openings in the insulative material that is lower than the walls. Individual capacitors are formed in the individual capacitor openings. A line of access transistors is formed in the individual trenches. The line of access transistors electrically couples to the individual capacitors that are along that line.

Abstract: A semiconductor device comprises a semiconductor substrate and a semiconductor fin. The semiconductor substrate has an upper surface and a recess extending downwards into the semiconductor substrate from the upper surface. The semiconductor fin is disposed in the recess and extends upwards beyond the upper surface, wherein the semiconductor fin is directly in contact with semiconductor substrate, so as to form at least one semiconductor hetero-interface on a sidewall of the recess.

Abstract: The present application relates to a cured product and the use thereof. When the cured product, for example, is applied to a semiconductor device such as an LED or the like, the decrease in brightness may be minimized even upon the long-term use of the device, and since the cured product has excellent cracking resistance, the device having high long-term reliability may be provided. The cured product has excellent processability, workability, and adhesive properties or the like, and does not cause whitening and surface stickiness, etc. Further, the cured product exhibits excellent heat resistance at high temperature, gas barrier properties, etc. The cured product may be, for example, applied as an encapsulant or an adhesive material of a semiconductor device.

Abstract: A method of forming a tier of an array of memory cells within an array area, the memory cells individually comprising a capacitor and an elevationally-extending transistor, the method comprising using two, and only two, sacrificial masking steps within the array area of the tier in forming the memory cells. Other methods are disclosed, as are structures independent of method of fabrication.

Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.

Abstract: A method of manufacturing a light emitting device includes: preparing a light-transmissive member including a light reflective sheet that has a through-hole, and a color conversion material layer that is composed of a light-transmissive resin containing a color conversion material and disposed in the through-hole, preparing a light emitting element, fixing the color conversion material layer to the light emitting element, covering a side surface of the light emitting element with a light-reflective member, and cutting the light-reflective member and light-reflective sheet.

Abstract: To improve the assemblability of a semiconductor device. When a memory chip is mounted over a logic chip, a recognition range including a recognition mark formed at a back surface of the logic chip is imaged and a shape of the recognition range is recognized, alignment of a plurality of bumps of the logic chip and a plurality of projection electrodes of the above-described memory chip is performed based on a result of the recognition, and the above-described memory chip is mounted over the logic chip. At this time, the shape of the recognition range is different from any portion of an array shape of the bumps, as a result, the recognition mark in the shape of the recognition range can be reliably recognized, and alignment of the bumps of the logic chip and the projection electrodes of the above-described memory chip is performed with high accuracy.

Abstract: Provided is a light emitting device package. It is a substrate comprising a top and a bottom surfaces being substantially parallel to each other; a light emitting diode chip on the substrate; a frame disposed around the light emitting diode chip and configured to reflect light emitted from the light emitting diode chip, the frame having an opening; a first metal layer disposed on the top surface of the substrate; a second metal layer disposed on the top surface of the substrate; a third metal layer disposed on the bottom surface of the substrate; a through hole connected between the first metal layer and the third metal layer; a material being filled in the opening of the frame; and a lens disposed on the material, wherein the substrate and the frame are separate from each other.

Abstract: First and second multi-LED packages are installed on a carrier. Each package includes its own emitting diodes that are series coupled to each other and that are encased within a single, internally reflective package having two external terminals. Each package has a light output face from which light, produced by all of the emitting diodes contained therein is emitted in response to a forward current passing through the two terminals. Each package also has phosphor mediums each positioned to be stimulated by primary light of a respective one of its contained emitting diodes, and in response emit secondary wavelength-converted light that emerges from the light output face and is combined with some of the primary light to yield white light. Other embodiments are also described and claimed.

Abstract: A light emitting device includes a resin package including a first lead and a second lead. A light emitting element includes a first electrode disposed to face the first lead and having a first post electrode projecting toward the first lead in a first projecting direction with a height equal to or larger than 50 ?m and equal to or smaller than 150 ?m in the first projecting direction and a second electrode disposed to face the second lead and having a second post electrode projecting toward the second lead in a second projecting direction with a height equal to or larger than 50 ?m and equal to or smaller than 150 ?m in the second projecting direction. A first electrically conductive bonding member connects the first lead and the first post electrode. A second electrically conductive bonding member connects the second lead and the second post electrode.

Abstract: There is provided a nitride semiconductor ultraviolet light-emitting element capable of efficiently releasing a waste heat generated in an ultraviolet light emitting operation. The nitride semiconductor ultraviolet light-emitting element includes a semiconductor laminated portion 11 having an n-type AlGaN layer 6, an active layer 7 of an AlGaN layer, and p-type AlGaN layers 9 and 10; an n electrode 13; a p electrode 12; a protective insulating film 14, and a first plated electrode 15 formed by a wet plating method and composed of copper or alloy containing copper as a main component. The semiconductor laminated portion 11 is formed in a first region R1, and the p electrode is formed on the portion 11. An upper surface of the n-type AlGaN-based semiconductor layer 6 is exposed in a second region, and the n electrode 13 is formed on the upper surface. The protective insulating film 14 has openings for exposing at least one part of the n electrode 13 and at least one part of the p electrode 12.

Abstract: An automatic feeder exchanging system that automatically exchanges a feeder for which exchange is necessary from multiple feeders set in a feeder setting area of a component mounter.

Abstract: The present application relates to a cured product and the use thereof. The cured product has excellent processability, workability, and adhesive properties or the like, and does not cause whitening and surface stickiness, etc. The cured product has excellent transparency, moisture resistance, mechanical properties, and cracking resistance, etc. The cured product, for example, may be applied as an encapsulant or an adhesive material of a semiconductor device to provide a device having high long-term reliability.

Abstract: A light emitting device includes a substrate, a light emitting element mounted on the substrate, a phosphor plate for covering an upper surface of the light emitting element, a white reflecting resin placed on the substrate to surround side surfaces of the light emitting element and the phosphor plate, and a reflecting frame, including a reflecting film formed by plating and a bonding portion, and placed on the substrate to surround the light emitting element, the phosphor plate, and the white reflecting resin. The reflecting frame is directly bonded to the substrate by the bonding portion in a portion where the white reflecting resin is not located.

Abstract: An example provides a method for forming an apparatus including a substrate imprinted with a pattern for forming isolated device regions. A method may include imprinting an unpatterned area of a substrate with a pattern to form a patterned substrate having a plurality of recessed regions at a first level and a plurality of elevated regions at a second level, and depositing a first layer of conductive material over the patterned substrate with a plurality of breaks to form a plurality of bottom electrodes. The method may include depositing a layer of an active stack, with a second layer of conductive material, over the plurality of bottom electrodes to form a plurality of devices on the plurality of recessed regions isolated from each other by the plurality of elevated regions.

Abstract: An organic electroluminescence (EL) device whose organic EL layer is less likely exposed to moisture. The organic EL device includes an organic EL layer; and a hygroscopic layer disposed with respect to at least one main surface of the organic EL layer. The hygroscopic layer includes: a hygroscopic film containing a base material and a hygroscopic agent mixed in the base material; and a pair of covering films each covering a different one of surfaces of the hygroscopic film in a thickness direction of the hygroscopic film. A region of the hygroscopic film that is in contact with one covering film whose distance from the organic EL layer is smaller than a distance of the other covering film from the organic EL layer contains the hygroscopic agent at a content rate lower than an average content rate of the hygroscopic agent in the hygroscopic film.

Abstract: A curable composition including: (A) an ester bond-containing organosilicon compound having two or more addition reactive carbon-carbon double bonds in one molecule, shown by the following general formula (1); (B) a silicon compound having two or more silicon atom-bonded hydrogen atoms in one molecule; and (C) a hydrosilylation reaction catalyst. This provides a curable composition to give a cured product with low gas permeability as well as excellent crack resistance and light transmission property.

Abstract: A method for manufacturing a light emitting device includes: mounting a light emitting element on the support body upper surface such that a light emitting element lower surface of light emitting element is opposite to the support body upper surface in a height direction, a frame and the light emitting element being mounted such that the light emitting element is located in an opening of the frame; injecting a resin into an inner space provided between the frame and the light emitting element through an inlet to form a covering member which covers the light emitting element such that at least a part of a light emitting element upper surface is exposed, the inlet connecting the inner space and an outer space opposite to the inner space with respect to the frame wall; and providing a light-transmissive member on the light emitting element.

Abstract: A light-emitting element includes a light transmissive substrate; a first semiconductor stacked body including: a first n-side semiconductor layer, and a first p-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein; a first p-electrode; a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole; a second semiconductor stacked body including: a second n-side semiconductor layer located around a periphery of the first semiconductor stacked body, and a second p-side semiconductor layer located above the second n-side semiconductor layer and located outside of an inner edge portion of the second n-side semiconductor layer; a second p-electrode; and a second n-electrode having a portion above the second p-electrode, and being electrically connected to the inner edge portion of the second n-side semiconductor layer.

Abstract: An initially flat light sheet is formed by printing conductor layers and microscopic LEDs over a flexible substrate to connect the LEDs in parallel. The light sheet is then subjected to a molding process which forms 3-dimensional features in the light sheet, such as bumps of any shape. The features may be designed to create a desired light emission profile, increase light extraction, and/or create graphical images. In one embodiment, an integrated light sheet and touch sensor is formed, where the molded features convey touch positions of the sensor. In one embodiment, a curable resin is applied to the light sheet to fix the molded features. In another embodiment, optical features are molded over the flat light sheet. In another embodiment, each molded portion of the light sheet forms a separate part that is then singulated from the light sheet.