Abstract: A device may include a substrate having a first embedded transistor in a first region and a second embedded transistor in a second region. The first region and the second region may be separated by trench extending through at least a portion of an epitaxial layer formed on the substrate. The first embedded transistor may be connected to a first light emitting diode (LED) and the second embedded transistor may be connected to a second LED. A first optical isolation layer may be between the epitaxial layer and the first region of the substrate. A second optical isolation layer may be between the epitaxial layer and the second region of the substrate.

Abstract: A vehicle lamp and a method for manufacturing a vehicle lamp. The vehicle lamp includes a lower substrate, a fluorescent film and a color filter stacked in this order. The fluorescent film and the color filter include polydimethylsiloxane (PDMS).

Abstract: A light-emitting diode (LED) sub-chip and a method of producing the same are provided. The LED sub-chip comprises an epitaxial layer disposed on a growth substrate, where the epitaxial layer comprises a plurality of electrodes. The groove disposed between the LED sub-chip and a second LED sub-chip, where the groove penetrates through the epitaxial layer separating the two sub-chips. The bridge insulating layer at least partially covering a sidewall of the groove, where the sidewall comprises a first surface and a second surface above the first surface, where the texture of the second surface is less granular than a texture of the first surface. The bridge electrode on the bridge insulating layer, where the bridge electrode connects respective electrodes of the two sub-chips at the first surface.

Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.

Abstract: Consumable and replaceable light bulbs that emit white light to provide ambient lighting and also emit UV light for pathogen inactivation. The white light and the UV light may be emitted simultaneously or the light bulb can be controlled to emit the white light and the UV light at separate times. The UV light emitted by the light bulbs has a wavelength and output power that is safe for humans and pets and the UV light inactivates pathogens over relatively prolonged exposure periods. The light bulbs described herein can be used in place of conventional light bulbs, for example in a room of a home, office building or other human occupied space. Humans can remain in the space when the light bulb(s) is on without being harmed by the UV light.

Abstract: A display panel includes a thin film transistor layer (4), a grating layer (3), a transparent anode layer (2), an emission layer (1), and a colored layer (6) opposite the emission layer (1). The colored layer (6) may include a plurality of color filters. The grating layer (3) may be between the thin film transistor layer (4) and the transparent anode layer (2). The grating layer (3) may include a plurality of blazed gratings corresponding to the plurality of color filters, respectively.

Abstract: This application describes a light emitting device or an assembly of light emitting devices. In the completed light emitting device, a distributed Bragg reflector minimizes the possibility of disturbing adjacent light emitting devices. Methods to fabricate such devices and assemblies of devices are also described.

Abstract: A deep ultraviolet light emitting device includes: an electron block layer of a p-type AlGaN-based semiconductor material or a p-type AlN-based semiconductor material provided on a support substrate; an active layer of an AlGaN-based semiconductor material provided on the electron block layer; an n-type clad layer of an n-type AlGaN-based semiconductor material provided on the active layer; an n-type contact layer provided on a partial region of the n-type clad layer and made of an n-type semiconductor material containing gallium nitride (GaN); and an n-side electrode formed on the n-type contact layer. The n-type contact layer has a band gap smaller than that of the n-type clad layer.

Abstract: A light emitting device for a display includes first LED sub-unit, second LED, and third LED sub-units, an insulating layer substantially covering the first, second, and third LED sub-units, and electrode pads electrically connected to the first, second, and third LED sub-units, in which the first LED sub-unit is disposed on a partial region of the second LED sub-unit, the second LED sub-unit is disposed on a partial region of the third LED sub-unit, the insulating layer has openings for electrical connection between the electrode pads, a common electrode pad is connected to the first, second, and third LED sub-units through the openings in the insulating layer, first, second, and third electrode pads are connected to the first, second, and third LED sub-units, respectively, through at least one of the openings, and the first, second, and third LED sub-units are configured to be independently driven using the electrode pads.

Abstract: A light emitting device for a display including a first substrate, a first LED sub-unit disposed on the first substrate, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a second substrate disposed on the third LED sub-unit, a first electrode pad, a second electrode pad, a third electrode pad, and a fourth electrode pad disposed on the second substrate, and through-hole vias electrically connecting the second, third, and fourth electrode pads to the first, second, and third LED sub-units, respectively, in which the first electrode pad is electrically connected to the first LED sub-unit without overlapping any through-hole vias.

Abstract: A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.

Abstract: Compounds that are organic radicals that can have a dual function. The compounds can be fluorescent emitters that emit in the near-IR. The compounds can also facilitate reverse intersystem crossing (RISC) to convert triplet excitons in an OLED to singlet excited states to maximize utilization of generated excitons in the OLED and approach 100% internal quantum efficiency.

Abstract: A light-emitting module includes: a light source; a light guide plate including an upper surface and a lower surface, the lower surface being at a side opposite to the upper surface, the light guide plate being configured to guide light from the light source; a first light-reflective member located at a lower surface side of the light guide plate, wherein the first light-reflective member includes: a first resin member, and a first reflector, wherein a refractive index of the first reflector is lower than a refractive index of the first resin member; and a second light-reflective member located at a lower surface side of the first light-reflective member, wherein the second light-reflective member includes: a second resin member, and a second reflector, wherein a refractive index of the second reflector is higher than a refractive index of the second resin member.

Abstract: A light emitting device includes a semiconductor layer having a light extraction surface and side surfaces. The semiconductor layer includes a cladding layer and an active layer. The cladding layer has the extraction surface and a cladding layer side surface of the side surfaces, the cladding layer side surface being arranged at a first angle to the extraction surface. The active layer has an active layer side surface of the side surfaces, the active layer side surface being arranged at a second angle different from the first angle to the extraction surface.

Abstract: A light-emitting device includes: a semiconductor stacked body comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked in this order; a first insulating film that covers the active layer and the second conductive semiconductor layer; a first conductive layer that continuously surrounds a lateral surface of the first conductive semiconductor layer that is exposed from the first insulating film; a second insulating film that covers the first conductive layer, the active layer, and the second conductive semiconductor layer and that has a hole disposed above the second conductive semiconductor layer; and a second conductive layer that continuously covers, via the second insulating film, an end portion of the first conductive layer located in proximity to an end portion of the second conductive semiconductor layer, wherein the second conductive layer is connected to an upper surface of the second conductive semiconductor layer through the hole.

Abstract: One or more semiconductor manufacturing methods and/or semiconductor arrangements are provided. In an embodiment, a silicon carbide (SiC) layer is provided. The SiC layer has a first portion overlying a second portion. The first portion has a first side distal the second portion and a second side proximal the second portion. The first portion is converted into a porous layer overlying the second portion. The porous layer has a first side distal the second portion and a second side proximal the second portion. The porous layer is removed to expose a first side of the second portion. After removing the porous layer, the first side of the second portion has a surface roughness less than a surface roughness of the first side of the first portion and/or less than a surface roughness of the first side of the porous layer.

Abstract: A method for manufacturing substrate-transferred optical coatings, comprising: a) providing a first optical coating on a first host substrate as a base coating structure; b) providing a second optical coating on a second host substrate; c) bonding the optical coating of the base coating structure to the second optical coating, thereby obtaining one combined coating; d) detaching one of the first and the second host substrates from the combined coating; determining if the combined coating fulfills a predetermined condition; e) if the result of the determining step is negative, taking the combined coating together with the remaining host substrate as the base coating structure to be processed next and continuing with step b); f) if the result of the determining step is positive, providing an optical substrate and bonding the optical substrate to the combined coating; g) removing the other one of the first and the second host substrate.

Abstract: A micro-light emitting diode (micro-LED) includes a current aperture to confine the current in a localized region such that the carrier recombination mostly occurs in the localized region to emit photons, thereby reducing the surface recombination and improving the quantum efficiency. The current confinement and localization are achieved using a localized breakthrough of a barrier layer by a localized contact, lightly p-doped active layers to suppress lateral transport of the carriers to the surface region, selective ion implantation, etching, or oxidation of a semiconductor layer, or any combination thereof.

Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.

Abstract: A lighting device comprises an organic light emitting panel, an inorganic light emitting diode on the organic light emitting panel, and a first lens structure at least partially surrounding the inorganic light emitting diode. The organic light emitting panel may include a base substrate, an auxiliary electrode on the base substrate, a first electrode on the auxiliary electrode, a passivation layer on the first electrode, a light emitting layer on the first electrode, a second electrode on the light emitting layer, and an encapsulation layer on the second electrode.

Abstract: An optoelectronic component on a substrate includes a first and a second electrode. The first electrode is arranged on the substrate and the second electrode forms a counter electrode. At least one photoactive layer system is arranged between these electrodes. The at least one photoactive layer system including at least one donor-acceptor system having organic materials.

Abstract: A light emitting diode pixel for a display including a first LED sub-unit, a second LED sub-unit disposed on a portion of the first LED sub-unit, a third LED sub-unit disposed on a portion of the second LED sub-unit, and a reflective electrode disposed adjacent to the first LED sub-unit, in which each of the first to third LED sub-units comprises an n-type semiconductor layer and a p-type semiconductor layer, each of the n-type semiconductor layers of the first, second, and third LED stacks is electrically connected to the reflective electrode, and the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit are configured to be independently driven.

Abstract: A semiconductor device comprising a waveguide having a core, said core having inserted therein one or more layers of nanoemitters.

Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.

Abstract: An epitaxial wafer includes an epitaxial layer disposed on a substrate. The epitaxial layer includes a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cm2 or less.

Abstract: A memory device that includes a first magnetic insulating tunnel barrier reference layer present on a first non-magnetic metal electrode, and a free magnetic metal layer present on the first magnetic insulating tunnel barrier reference layer. A second magnetic insulating tunnel barrier reference layer may be present on the free magnetic metal layer, and a second non-magnetic metal electrode may be present on the second magnetic insulating tunnel barrier. The first and second magnetic insulating tunnel barrier reference layers are arranged so that their magnetizations are aligned to be anti-parallel.

Abstract: A light emitting diode is provided. The light emitting diode includes a substrate, a first semiconductor layer disposed on the substrate, a light emitting layer disposed on a first portion of the first semiconductor layer, a second semiconductor layer disposed on the light emitting layer, a first electrode disposed on a second portion of the first semiconductor layer, the first portion and the second portion not overlapping, a second electrode disposed on the second semiconductor layer. Thickness of the first electrode is greater than thickness of the second electrode. A backlight module including the light emitting diode is further provided.

Abstract: Disclosed is a deep ultraviolet light-emitting device which includes on a substrate 10 in order: an n-type semiconductor layer 30, a light-emitting layer 40, a p-type electron block layer 60, and a p-type contact layer 70, wherein the p-type contact layer 70 comprises a superlattice structure having an alternating stack of: a first layer 71 made of AlxGa1-xN having an Al composition ratio x higher than an Al composition ratio w0 of a layer configured to emit deep ultraviolet light in the light-emitting layer; and a second layer 72 made of AlyGa1-yN having an Al composition ratio y lower than the Al composition ratio x, and the Al composition ratio w0, the Al composition ratio x, the Al composition ratio y, and a thickness average Al composition ratio z of the p-type contact layer satisfy the formula [1] 0.030<z?w0<0.20 and the formula [2] 0.050?x?y?0.47.

Abstract: A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A surface of the p-type region perpendicular to a growth direction of the semiconductor structure includes a first portion and a second portion. The first portion is less conductive than the second portion. The device further includes a p-contact formed on the p-type region. The p-contact includes a reflector and a blocking material. The blocking material is disposed over the first portion and no blocking material is disposed over the second portion.

Abstract: A display panel includes a substrate, an organic light emitting structure, a first electrode, a light extraction layer, a protection layer, and a thin film packaging layer, which are stacked in sequence. The organic light emitting structure, the first electrode, the light extraction layer and the protection layer are coated by the thin film packaging layer. The light extraction layer is located between the protection layer and the first electrode, and completely isolates the protection layer and the first electrode.

Abstract: A compound that emits fluorescence and delayed fluorescence is provided as a material for an organic electroluminescent device of high efficiency, and an organic photoluminescent device and an organic electroluminescent device of high efficiency and high luminance are provided using this compound. The compound of general formula (1) having a tetraazatriphenylene ring structure is used as a constituent material of at least one organic layer in an organic electroluminescent device that includes a pair of electrodes, and one or more organic layers sandwiched between the pair of electrodes.

Abstract: Photonic devices having Al1-xScxN and AlyGa1-yN materials, where Al is Aluminum, Sc is Scandium, Ga is Gallium, and N is Nitrogen and where 0<x?0.45 and 0?y?1.

Abstract: A semiconductor light-emitting element includes: a semiconductor stack including an n-type, layer and a p-type layer and having at least one n exposure portion being a recess where the n-type layer is exposed; a p wiring electrode layer on the p-type layer; an insulating layer (i) continuously covering inner lateral surfaces of at least one n exposure portion and part of a top surface of the p wiring electrode layer and (ii) having an opening portion that exposes the n-type layer; an n wiring electrode layer disposed above the p-type layer and the p wiring electrode layer and in contact with the n-type layer in the opening portion; and at least one first n connecting member connected to the n wiring electrode layer in at least one first n terminal region. The n wiring electrode layer and the p-type layer are disposed below at least one first n terminal region.

Abstract: A solar cell that capable of improving light utilization efficiency is disclosed. The solar cell comprises I-VII compound photovoltaic layer, silicon photovoltaic layer, first electrode and second electrode. The I-VII compound photovoltaic layer comprises first and second type I-VII compound layers. The first and second type I-VII compound layer have first and second type impurities, respectively. The second type I-VII compound layer is disposed under the first type I-VII compound layer. The silicon photovoltaic layer comprises first and second type silicon layers. The first and second type silicon layers have first and second type dopants, respectively. The first type and second type silicon layers are disposed under the second type I-VII compound layer and the first type silicon layer, respectively. The first and second electrodes are formed under the second type silicon layer and on a portion of the first type I-VII compound layer, respectively.

Abstract: An obstruction detection and warning system includes a plurality of edge light emitters, and a processing system. The edge light emitters are mounted on a structure that has a width and a height. Each edge light emitter is operable to emit a light beam at an angular rate, and that is encoded with data that indicates its position and its height. The processing system receives the light beam emitted from each edge light emitter and decodes the encoded data from the received light beam to determine the width and height of the structure, and to determine a distance from an aircraft to the structure. The processor also compares an active trajectory and current altitude of the aircraft to the width and height of the structure and the distance to the structure and, based on the comparison, generates and supplies situational cues to an operator of the aircraft.

Abstract: A light emitting diode pixel for a display including a first LED sub-unit, a second LED sub-unit disposed on a portion of the first LED sub-unit, a third LED sub-unit disposed on a portion of the second LED sub-unit, and a reflective electrode disposed adjacent to the first LED sub-unit, in which each of the first to third LED sub-units comprises an n-type semiconductor layer and a p-type semiconductor layer, each of the n-type semiconductor layers of the first, second, and third LED stacks is electrically connected to the reflective electrode, and the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit are configured to be independently driven.

Abstract: In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.

Abstract: The system of the present invention includes a conductive element, an electronic component, and a partial power source in the form of dissimilar materials. Upon contact with a conducting fluid, a voltage potential is created and the power source is completed, which activates the system. The electronic component controls the conductance between the dissimilar materials to produce a unique current signature. The system can also measure the conditions of the environment surrounding the system.

Abstract: Provided are a deep ultraviolet light emitting element that exhibits both high light output power and an excellent reliability, and a method of manufacturing the same. A deep ultraviolet light emitting element 100 of this disclosure comprises an n-type semiconductor layer 30, a light-emitting layer 40, and a p-type semiconductor layers 60, on a substrate 10, in this order. The light-emitting layer 40 emits deep ultraviolet light. The p-type semiconductor layers 60 comprise a p-type first layer 60A and a p-type contact layer 60B directly on the p-type first layer 60A. The p-type contact layer 60B is made of a non-nitride p-type group III-V or p-type group IV semiconductor material, and functions as a reflective layer to reflect the deep ultraviolet light. The reflectance of light at a wavelength of 280 nm incident on the p-type contact layer 60B from the p-type first layer 60A is 10% or higher.

Abstract: Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height from an LED base and including a plurality of epitaxial layers including a first n-layer, a first active layer, and a first p-layer. A second flat region is provided, at a second height from the LED base and parallel to the first flat region, and includes at least a second n-layer. A sloped sidewall connecting the first flat region and the second flat region is provided and includes at least a third n-layer, the first n-layer being thicker than at least a portion of third n-layer. A p-contact is formed on the first p-layer and an n-contact formed on the second n-layer.

Abstract: The invention relates to an optoelectronic semiconductor component (10) comprising a substrate (1), a first insulator layer (2), and a second insulator layer (3). Furthermore, the semiconductor component (10) comprises an organic semiconductor layer sequence (4) having an active area (4a) which, during operation, generates or receives light, a first electrode (5) and a second electrode (6), and encapsulation (7) which covers the organic semiconductor layer sequence (4) and the first insulator layer (2) completely and covers the second insulator layer (3) and the first electrode (5) or the second electrode (6) partially. Here, the first electrode (5) is arranged between the organic semiconductor layer sequence (4) and the first insulator layer (2), and the second electrode (6) is arranged on the organic semiconductor layer sequence (4), wherein the first electrode (5) and/or the second electrode (6) is/are at least partly arranged on the second insulator layer (3).

Abstract: The present disclosure relates to a method that includes contacting a surface of a first layer that includes a Group III element and a Group V element with a gas that includes HCl, where the first layer is positioned in thermal contact with a wafer positioned in a chamber of a reactor, and the contacting results in a roughening of the surface.

Abstract: An electronic device may have a display mounted in a housing. The display may be mounted on a front side of the device and the housing may have a housing wall on the rear side of the device. The display may be formed from an array of pixels configured to display an image for a user. Pixel-free border areas that run along the edges of the array of pixels may be provided with an edge illuminator. The edge illuminator may provide illumination to the border areas during operation of the device. The edge illuminator may have crystalline semiconductor light-emitting diode dies, backlit liquid crystal devices or electrophoretic display components, or may have a light guide that is supplied with illumination from a light-emitting diode.

Abstract: The invention relates to a method for manufacturing a layer of interest (3) in a III-N crystalline compound by epitaxy from a layer of graphene (2), characterized in that it comprises, prior to a phase of nucleation of the layer of interest (3), a step of thermal treatment of the layer of graphene (2) in which it is subjected to a first temperature (Ttt) no lower than 1050° C. and to a stream of ammonia.

Abstract: [Object] A light-emitting element includes: a semiconductor layer; a first electrode portion; a second electrode portion; a first insulating layer; and a metal layer. The semiconductor layer includes an active layer, a first-conductivity-type layer, and a second-conductivity-type layer, and has a semiconductor-layer side surface including a side surface of the active layer, a side surface of the first-conductivity-type layer, and a side surface of the second-conductivity-type layer. The first electrode portion is connected to the first-conductivity-type layer. The second electrode portion is connected to the second-conductivity-type layer. The first insulating layer is in contact at least with a part of the semiconductor-layer side surface, the part of the semiconductor-layer side surface corresponding to a part of the side surface of the active layer.

Abstract: This document describes a device that is monolithic and capable of emitting quantum light without using previous configurations known in the art that require certain elements which yield certain disadvantages, which may be solved by implementing the device of the invention described herein. In this way the use of a transmitter which controls the state of charge or the wavelength of quantum light emitters independently of current in the device is implemented and does function properly when quantum light emitters are embedded in photonic structures, like microcavities or photonic crystals (PC); this is achieved by stacking semiconductor layers with different composition and doping types. A quantum light emitter circuit, which is a quantum optical circuit comprising at least two of said devices, is also an as aspect of the invention disclosed herein.

Abstract: An organic electroluminescence display device includes: a lower electrode that is made of a conductive inorganic material and formed in each of pixels arranged in a matrix in a display area; a light-emitting organic layer that is in contact with the lower electrode and made of a plurality of different organic material layers including a light-emitting layer emitting light; an upper electrode that is in contact with the light-emitting organic layer, formed so as to cover the whole of the display area, and made of a conductive inorganic material; and a conductive organic layer that is in contact with the upper electrode, formed so as to cover the whole of the display area, and made of a conductive organic material.

Abstract: A light-emitting thyristor includes a layered structure having a semiconductor DBR layer, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductive type, a third semiconductor layer, and a fourth semiconductor layer of the second conductivity type in this order on a semiconductor substrate, the third semiconductor layer has at least one fifth semiconductor layer of the first conductivity type and a multi-quantum well structure, the fifth semiconductor layer is present between the second semiconductor layer and the multi-quantum well structure, the multi-quantum well structure is formed of barrier layers and quantum well layers, and the number of the quantum well layers is greater than or equal to 10.

Abstract: A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction.

Abstract: Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.