Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

Abstract: An optical coherent transceiver comprising a polarization and phase-diversity coherent receiver and a polarization and phase-diversity modulator on the same substrate interfaced by three grating couplers, on grating coupler coupling in a signal, one grating coupler coupling in a laser signal, and a third grating coupler coupling out a modulated signal.

Abstract: A method may include depositing a carbon layer on a substrate using physical vapor deposition, wherein the carbon layer exhibits compressive stress, and is characterized by a first stress value; and directing a dose of low-mass species into the carbon layer, wherein, after the directing, the carbon layer exhibits a second stress value, less compressive than the first stress value.

Abstract: A uLED and method for regrowth with thinner deposition on sidewall are disclosed. The uLED and method include a growth substrate including flat first and second regions, where the growth substrate is thicker in the first region as compared to the second region, and a third region of sloped sidewalls connecting the first and second regions, the topography forming a regular geometric pattern, a plurality of semiconductor epitaxial layers covering the first, second, and third regions including at least a p-n junction layer including a light emitting active region of direct bandgap semiconductor, sandwiched between n-type and p-type layers, each of the plurality of semiconductor epitaxial layers being thicker on the first and second regions as compared to the corresponding semiconductor epitaxial layers on the third region, and a plurality of electrical contacts forming an anode and cathode on part of the first and second regions, respectively.

Abstract: The present disclosure provides a method for manufacturing a flexible device having a pattern of a two-dimensional material formed thereon includes: a step of forming a two-dimensional material layer on a substrate; a step of forming a pattern of the two-dimensional material; a step of coating a flexible substrate solution on the patterned two-dimensional material layer and curing the same; and a step of removing the substrate.

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

Abstract: Provided are a printing ink comprising inorganic nano-materials and an electronic device manufactured by printing with the printing ink, in particular, an electroluminescent device. The composition of the provided ink comprises at least one inorganic nano-material, in particular, quantum dots, and at least one ester-based organic solvent.

Abstract: A power battery using the energy from a radioactive material. The arrangement uses ZnO as a semiconductor, with energy generated a metal-semiconductor junction. The ZnO is arranged in thin layers. This allows for good durability and relatively high power production.

Abstract: A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 ?m; wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.

Abstract: A method of manufacturing a patterned substrate includes: providing an exposure mask that includes: a plurality of inner light-shielding portions arranged in a lattice, a light-transmissive portion integrally connecting regions surrounding the plurality of inner light-shielding portions, and an outer light-shielding portion surrounding the light-transmissive portion; performing a plurality of exposures of a photoresist layer disposed on a substrate in a step-and-repeat-manner using the exposure mask, so as to form a plurality of inner projected parts corresponding to the inner light-shielding portions, the inner projected parts being aligned in a lattice as a whole; developing the photoresist layer on which the plurality of exposures have been performed; and etching the substrate using the developed photoresist layer as a mask.

Abstract: A thermal radiation light source includes a laminated body including m quantum layers laminated where m is an integer of 2 or more, including an n-layer and a p-layer sandwiching the quantum layers from both sides in the laminating direction, the n-layer made of an n-type semiconductor and the p-layer made of a p-type semiconductor; a voltage applying unit for the m quantum layers is directly or indirectly connected to the n-layer and p-layer sandwiching each layer applying a voltage for moving to the n-layers or p-layers a charge; a voltage switching unit switches ON/OFF of application of the voltage to the m quantum layers; and a photonic crystal portion disposed in the laminated body or adjacent to the laminated body, so that lights of m wavelengths resonate, the lights of the m wavelengths generated in the m quantum layers corresponding to transition energy between subbands in the quantum layer.

Abstract: A light emitting device including first, second, and third LED sub-units, and electrode pads disposed on the first LED sub-unit, electrically connected to the LED sub-units, and including a common electrode pad electrically connected to each of the LED sub-units, and first, second, and third electrode pads connected to a respective one of the LED sub-units, in which the common electrode pad, the second electrode pad, and the third electrode pad are electrically connected to the second LED sub-unit and the third LED sub-unit through holes that pass through the first LED sub-unit, the first, second, and third LED sub-units are configured to be independently driven, light generated in the first LED sub-unit emitted to the outside through the second and third LED sub-units, and light generated in the second LED sub-unit is emitted to the outside through the third LED sub-unit.

Abstract: A method includes forming a wide band gap (WBG) epitaxial layer on an engineered substrate. The WBG epitaxial layer includes a plurality of groups of epitaxial layers. The engineered substrate includes engineered layers formed on a bulk material having a coefficient of thermal expansion (CTE) matching a CTE of the WBG epitaxial layer. The method also includes forming a plurality of WBG devices based on the plurality of groups of epitaxial layers by: for each respective WBG device, forming internal interconnects and electrodes within a respective group of epitaxial layers. The method further includes forming external interconnects between the electrodes of different WBG devices of the plurality of WBG devices to form an integrated circuit.

Abstract: According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 ? to about 140 ?.

Abstract: The present invention is related to the in-line determination of thickness, optical properties and quality of thin films and multilayer structures of organic (conductors, semiconductors and insulators), hybrid (organic/inorganic) and inorganic (e.g. metals, oxides) materials in real-time by the use of Spectroscopic Ellipsometry—SE, during their printing and/or treating by roll-to-roll and sheet-to-sheet processes. SE unit is located on a stage with the possibility of movement in the lateral direction in relation to the movement of e.g. the roll, taking measurements in the spectral range of Vis-fUV from 1.5-6.5 eV.

Abstract: An end effector for a robot having a threaded shaft; a motor coupled to the shaft and configured to rotate the shaft about its axis; a nut threaded onto the shaft; a feature for preventing the nut from rotating about the axis of the shaft; and an elongate member fixed at one end to the nut and extending from the nut in a direction parallel to the axis of the shaft. The end effector may further include a container for containing a fluid having an elongate body portion having an opening at one end; and a reciprocable plunger extending into an opposite end of the body portion. A second end of the elongate member may be coupled to the plunger.

Abstract: The present disclosure provides a method for making a light-emitting device. The method includes steps of providing a first substrate; forming a first semiconductor layer on the first substrate; providing a second substrate; forming an intermediate layer on the second substrate, wherein a refractive index of the intermediate layer is between a refractive index of the second substrate and a refractive index of the first semiconductor layer; and bonding the first semiconductor layer and the intermediate layer.

Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle ? between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.

Abstract: An embodiment provides a light emitting element comprising: a first conductive semiconductor layer including a first layer and a second layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a first electrode and a second electrode arranged on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, wherein the first layer includes a plurality of first grooves, and a growth prevention layer is arranged on the bottom surface and side surfaces of each of the first grooves.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor layer, and a second semiconductor layer. The second electrode is separated from the first electrode in a first direction. The first semiconductor layer includes n-type SiC, is provided between the first electrode and the second electrode, and is electrically connected to the first electrode. The second semiconductor layer contacts the first semiconductor layer and the second electrode, is provided between the first semiconductor layer and the second electrode, and includes n-type AlxGa1-xN (0.5?x?1). A thickness of the second semiconductor layer is not less than 10 nm and not more than 1 ?m.

Abstract: Disclosed is a method for producing rotary sputtering target assemblies that are bonded to a suitable backing support. The bonding between the sputtering target body and the backing support is achieved by controlled heating under a suitable temperature, preferably with the help of conductive layer between the induction heater and internal target body that is inductively heated in a manner that enhances axial and radial gradient heating. A non-adhesive protective wrap can also be placed at the target body such as between the conductive wrap and target body.

Abstract: Quantum dot layers and display devices including quantum dot layers are described. In an embodiment the quantum dot layer includes quantum dots with coatings to adjust the spacing between adjacent quantum dots. In an embodiment, the coatings are metal oxide coatings and may create a charge transporting matrix. In an embodiment, the coatings are core-material coatings. The QD layers may be QD-LED compatible.

Abstract: A light-emitting diode (LED) device (e.g., AlGaInP LED) includes a transparent substrate, an epitaxial structure defining an isolation trench and an epitaxial structure, an insulating passivation layer, a P electrode and an N electrode. The epitaxial structure is disposed above the transparent substrate. The isolation trench divides the epitaxial structure into a first portion and a second portion. The at least one through hole extends through the first portion. At least a portion of the insulating passivation layer is disposed in the isolation trench. The P electrode is disposed above the first portion of the epitaxial structure and in the at least one through hole. The N electrode is disposed above the second portion of the epitaxial structure. A top surface of the P electrode is horizontally aligned with a top surface of the N electrode.

Abstract: A nitride semiconductor light emitting element includes: an n-side layer; a p-side layer; an active layer disposed between the n-side layer and the p-side layer, the active layer comprising: a well layer containing Al, Ga, and N, and a barrier layer containing Al, Ga, and N, wherein an Al content of the barrier layer is higher than an Al content of the well layer; and an electron blocking structure layer between the active layer and the p-side layer, the electron blocking structure comprising: a first electron blocking layer disposed between the p-side layer and the active layer, a second electron blocking layer disposed between the p-side layer and the first electron blocking layer, and an intermediate layer disposed between the first electron blocking layer and the second electron blocking layer.

Abstract: The present disclosure is directed to various mechanical logic gates. In one example a mechanical logic NOT gate system is formed which has a first pair of bi-stable buckling structures each being operatively connected at a first connection point thereof to one another, and also to a first rigid structure at second connection points, the first rigid structure being held stationary. A second pair of bi-stable buckling flexures is each operatively connected at first connection points thereof to each other and at second connection points thereof to a second rigid structure being held stationary. An output element is coupled a first one of each of the first and second pairs of bi-stable buckling structures. An input element is coupled to a second one of each of the first and second pairs of bi-stable buckling structures. The output element moves from a logic 1 position to a logic 0 position in response to movement of the input element from a logic 0 position to a logic 1 positions, respectively.

Abstract: A device comprising a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is disclosed. The device comprises a porous region. The device comprises a first layer disposed between the light emitting layer and the porous region. The device comprises a mask layer disposed between the porous region and the first layer. The device comprises a plurality of openings formed in the mask layer.

Abstract: An organic light emitting device including a first electrode; a self-assembled monolayer on the first electrode; a hole control layer on the self-assembled monolayer; a light emitting layer on the hole control layer; an electron control layer on the light emitting layer; and a second electrode on the electron control layer, wherein the self-assembled monolayer includes a plurality of organic molecules, each of the plurality of organic molecules having a head bonded to the first electrode, a terminal end adjacent to the hole control layer, and a tail connecting the head with the terminal end.

Abstract: The present disclosure provides an organic light emitting diode (OLED) device and a method for manufacturing the same, an OLED display substrate and an OLED display device. The OLED device of the present disclosure comprises a substrate, and a first electrode, a light emitting layer and a second electrode arranged on the substrate, wherein the light emitting layer comprises fibers of p-phenylene based polymer as a host material, and the fibers of p-phenylene based polymer are arranged in a first orientation; and wherein the light emitted by the fibers of p-phenylene based polymer arranged in the first orientation is linearly polarized light in a first direction. The OLED device of the present disclosure can simultaneously ensure a good contrast, brightness and light transmittance.

Abstract: The optical device includes a waveguide positioned on a base and a modulator positioned on the base. The modulator includes a ridge that includes Si1-xGex where x is greater than or equal to 0.4 and less than or equal to 0.8. The modulator is configured to guide a light signal through the modulator such that the light signal contacts the Si1-xGex. A local heater is configured to heat the modulator.

Abstract: Gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) ?c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm?3; an impurity concentration of oxygen between about 2×1017 cm?3 and about 1×1020 cm?3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and CI greater than about 1×1016 cm?3; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.

Abstract: A light emitting element includes a semiconductor structure including a first layer including a first and a second regions, and a second layer above the second region, the first region including extending portions each extending into the second region from an outer peripheral region; a first insulating layer including first through-holes respectively located on the extending portions, and a second through-hole located above the second region; a second insulating layer including a third and a fourth through-holes; a first external electrode connected with the first layer via the first through-holes; and a second external electrode connected with the second layer via the second through-hole. The extending portions are each located in an area, on a top surface of the first layer, other than an area overlapping any of corner portions of the first external electrode and other than an area overlapping any of corner portions of the second external electrode.

Abstract: An LED module is disclosed. The LED module includes: a mount substrate including electrodes; an LED chip including a semiconductor stacked structure, a passivation layer covering the outer surface of the semiconductor stacked structure, and electrode pads connected to the outer surface of the semiconductor stacked structure through openings formed in the passivation layer; and solder bumps connecting the electrode pads to the corresponding electrodes and formed using a solder material represented by Sn-M (where M is a metal).

Abstract: An illuminatable vehicle assembly includes, among other things, a substrate, and a multi-layered film atop the substrate. The multi-layered film has a dielectric layer that emits light. The dielectric layer is disposed between an anode layer and a cathode layer. The assembly further includes an overmold layer atop at least a portion of the multi-layered film.

Abstract: The present disclosure provides an electroluminescent device, a method for manufacturing the same, and a display device. The electroluminescent device of the present disclosure includes: a first substrate and a second substrate disposed opposite to each other; a first electrode disposed on a side of the first substrate proximal to the second substrate; a main spacer disposed between the first substrate and the second substrate and configured to support the first substrate and the second substrate; a first spacer spaced apart from the main spacer disposed on the side of the second substrate proximal to the first substrate; and an auxiliary electrode layer disposed on at least part of an surface of the first spacer proximal to the first substrate, wherein at least part of the auxiliary electrode layer is in contact with the first electrode for electrical connection.

Abstract: A light emitting material is represented by the following formula (1), the organic EL device employing the material as delayed fluorescence emitting dopant or fluorescence emitting dopant can display good performance like as lower driving voltage and power consumption, especially doping with the host (H1 to H4) and the second host (SH1 to SH4) can increasing efficiency and half-life time. wherein G represents the following formula (2): L, m, n, p, R1 to R4, Ar and X are the same definition as described in the present invention.

Abstract: Connection patterns of plural diodes include a first series connection pattern and a second series connection pattern. The first series connection pattern extends from an input terminal in the X direction. The second series connection pattern has a portion through which a current flows to approach the input terminal. The first series connection pattern includes a first diode, which is the first diode counted from the input terminal. The second series connection pattern includes a second diode, which is the last diode counted from the input terminal. The second diode is disposed separately from the first diode with some distance therebetween in the Y direction. An N-type region of the first diode and a P-type region of the second diode directly oppose each other as viewed in a planar direction.

Abstract: A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: providing a monocrystalline substrate having an upper surface covered with a masking layer comprising at least one opening exposing the upper surface; filling the opening by epitaxially growing therein a first layer comprising a first Group III-nitride compound; and growing the first layer further above the opening and on the masking layer by epitaxial lateral overgrowth, wherein the at least one opening has a top surface defined by three or more straight edges forming a polygon parallel to the upper surface and oriented in such a way with respect to the crystal lattice of the monocrystalline substrate so as to permit the epitaxial lateral overgrowth of the first layer in a direction perpendicular to at least one of the edges, thereby forming the semiconductor structure as an elongated structure.

Abstract: A high power device including with a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer, and a third nitride semiconductor layer containing an Al element formed on the second nitride semiconductor layer. The second nitride semiconductor layer is a multiple quantum well layer in which a nitride semiconductor layer containing an In element and a nitride semiconductor layer not containing an In element are alternately stacked.

Abstract: A nitride underlayer includes: a pattern substrate with lattice planes of different growth rates; a nitride nucleating layer over the pattern substrate; a first nitride layer with three-dimensional growth over the nitride nucleating layer, and forming a nanopillar structure at a top of the substrate; a second nitride layer with two-dimensional growth over the first nitride layer, and folding into an uncracked plane over the nanopillar structure.

Abstract: An embodiment relates to a light emitting element package and display device.

Abstract: Described herein are semiconductor devices and structures with improved power handling and heat dissipation. Embodiments are suitable for implementation in gallium nitride. Devices may be provided as individual square or diamond-shaped dies having electrode terminals at the die corners, tapered electrode bases, and interdigitated electrode fingers. Device matrix structures include a plurality of device dies arranged on a substrate in a matrix configuration with interdigitated conductors. Device lattice structures are based on a unit cell comprising a plurality of individual devices, the unit cells disposed on a chip with geometric periodicity. Also described herein are methods for implementing the semiconductor devices and structures.

Abstract: An optical component assembly is provided including a substrate. The assembly includes an optical transmitter configured to transmit an optical signal, an optical receiver configured to receive the optical signal, and an optical waveguide extending between the optical transmitter and the optical receiver. The assembly further includes a frangible region defining a first portion of the substrate and a second portion of the substrate, wherein the frangible region is configured to allow the first portion to be separated from the second portion. The assembly may be configured to be modified from a testing configuration, in which the first portion is integrally connected to the second portion via the frangible region, to an operational configuration, in which the first portion is separated from the second portion such that communication of optical signals between the optical transmitter and the optical receiver is precluded.

Abstract: A compound semiconductor device includes: a carrier transit layer; a carrier supply layer that is formed over the carrier transit layer and is made of InAlN; and a spacer layer that is formed between the carrier transit layer and the carrier supply layer and is made of at least one of AlGaN and InAlGaN.

Abstract: A light emitting module including a working piece and a light emitting film is provided. The light emitting film is disposed on a surface of the working piece and emits lights according to a voltage difference. The light emitting film includes a bottom layer, a pattern layer and a colour layer. The bottom layer is disposed on the surface of the working piece. The pattern layer is disposed on the bottom layer for providing a pattern. The colour layer is disposed on the bottom layer for providing a colour. The pattern layer and the colour layer are overlapped with each other over the bottom layer, so that the light emitting film forms a light emitting pattern with the pattern and the colour on the working piece.

Abstract: Optical lens and light emitting device designs achieve uniform light distribution without producing a light “hot spot”, with a benefit of reducing the number of light sources needed and overall cost for direct-lit backlight device. The optical lens includes coating portions or structures on the bottom surface thereof, and a backlight device, or other light emitting device, incorporating said lens, to produce a uniform distribution of light at a target surface. The disclosed lens and light emitting device are particularly useful when an extremely wide transfer function of backlight is needed.

Abstract: A light emitting device package includes a first wavelength conversion portion and a second wavelength conversion portion to provide a wavelength of incident light to provide light having a converted wavelength, a light-transmissive partition structure extending along side surfaces of the first and second wavelength conversion portions along a thickness direction to separate the first and second wavelength conversion portions part from each other along a direction crossing the thickness direction, and a cell array including a first light emitting device, a second light emitting device and a third light emitting device, overlapping the first wavelength conversion portion, the second wavelength conversion portion and the light-transmissive partition structure, respectively, along the thickness direction.

Abstract: A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.

Abstract: A light-emitting diode (LED) chip and a display device having the same are provided. A green LED is regrown on a blue LED to produce blue and green light, and a red phosphor is disposed on the blue or green LED to produce red light. Red light, green light, and blue light are to be produced using a single LED chip. The single LED chip forms three subpixels therein so as to facilitate a transfer process of the LED chip to a display panel. The LED chip is configured based on the blue, green, and blue LEDs so as to facilitate the fabrication and driving of the LED chip.

Abstract: A light-emitting device has a first conductive semiconductor layer; an active layer arranged on the first conductive semiconductor layer, and including a plurality of first recesses; an EBL arranged on the active layer, and including a plurality of second recesses arranged on the first recesses; and a second conductive semiconductor layer arranged on the EBL. The ratio of a first area doping concentration and a second recess doping concentration is from 1:0.8 to 1:1. The active layer emits first light and second light, the first light has a peak in a wavelength of 450 nm to 499 nm, and the second light has a peak in a wavelength of 500 nm to 550 nm.

Abstract: The present disclosure relates to a substrate, a method for fabricating the same and an organic light emitting diode display device. The substrate includes a metal foil. A metal material used for the metal foil is capable of being anodized and a plurality of concave light trapping microstructures is formed on a surface of the metal foil.