Abstract: A polarization recycling backlight and a multiview display employ a polarization-selective scattering feature configured to preferentially scatter out a first polarization component of guided light and a polarization conversion structure configured to convert a portion of a second polarization component of the guided light into the first polarization component. The polarization conversion structure includes a subwavelength grating.

Abstract: An organic light-emitting display device capable of improving luminance and light extraction efficiency thereof while preventing image blur, and a method for manufacturing the same is disclosed. In accordance with the device and the method, image blur is suppressed and luminance and light-emitting efficiency are improved by forming micro-lenses on an encapsulating layer for protecting organic light-emitting elements at precise positions corresponding to the elements in a self-aligned and self-assembled manner.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.

Abstract: Provided is a lighting device, comprising: a light source module comprising: at least one light source disposed on a printed circuit board; and a resin layer disposed on the printed circuit board so that the light source is embedded; a light reflection member formed on at least any one of one side surface and another side surface of the resin layer; and a diffusion plate having an upper surface formed on the light source module, and a side wall which is integrally formed with the upper surface and formed to extend in a lower side direction and which is adhered onto the light reflection member, wherein a first separated space is formed between the light source module and the upper surface of the diffusion plate, whereby flexibility of the product itself can be secured, and durability and reliability of the product can be also improved.

Abstract: A fluidic assembly emissive display panel is presented with a plurality of wells exposing LED interfaces. Each LED interface is made up of a planar first interconnect platform having an x-axis first depth and is configured to accept an axial LED first electrode mounting wing. A planar second interconnect platform has the first depth and is configured to accept an axial LED second electrode mounting wing. A groove is interposed between the first and second interconnect platforms and has an x-axis second depth, greater than the first depth, and is configured to accept an axial LED body locking tooth. The axial LEDs have an inorganic LED body with two symmetrical locking teeth. First and second electrode mounting wings are electrically connected to corresponding LED interface first and second interconnect platforms, and aligned in a plane orthogonal to stacked LED body semiconductor layers.

Abstract: Micro-LED structures for full color displays and methods of manufacturing the same are disclosed. An apparatus for a micro-LED display includes a first portion of a nanorod and a second portion of the nanorod. The first and second portions including gallium and nitrogen. The apparatus includes a polarization inversion layer between the first portion and the second portion. The apparatus includes a cap at an end of the nanorod. The cap including a core and an active layer. The core including gallium and nitrogen. The active layer including indium.

Abstract: The present disclosure provides a display panel and a manufacturing method thereof, a display device. The display panel includes: a substrate; a plurality of driving electrodes and a micro light emitting diode located on a surface of the substrate, wherein respective electrodes of the micro light emitting diode are located at a side of the micro light emitting diode facing away from the substrate; and a plurality of driving wires respectively electrically coupling the respective electrodes of the micro light emitting diode to the plurality of driving electrodes.

Abstract: A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65<Cx<0.69 and 0.29<Cy<0.3370 in color coordinates, and a green apex of a color region of the white light is positioned in a region of 0.17<Cx<0.31 and 0.61<Cy<0.70 in the color coordinates.

Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.

Abstract: Disclosed according to an embodiment is a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the semiconductor structure includes a third conductive semiconductor layer disposed between the second conductive semiconductor layer and the second electrode, the first conductive semiconductor layer includes a first dopant, the second conductive semiconductor layer includes a second dopant, the third conductive semiconductor layer includes the first dopant and the second dopant, and the concentration ratio between the first dopant and the second dopant included in the third conductive semiconductor layer ranges f

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Abstract: To provide a light-emitting device that can obtain fluorescence having a narrow spectrum more efficiently, a light-emitting device includes: a light-emitting layer in which thermally activated delayed fluorescence bodies and quantum dots are dispersed; a first electrode in a lower layer than the light-emitting layer; and a second electrode in an upper layer than the light-emitting layer, wherein a light emission spectrum of the thermally activated delayed fluorescence bodies and an absorption spectrum of the quantum dots at least partially overlap each other.

Abstract: In a graphene-semiconductor heterojunction photodetector and a method of manufacturing the same according to the present inventive concept, a source electrode and a test electrode are formed to face each other on a graphene layer, and a drain electrode is formed in a direction perpendicular to a central region portion of the graphene layer, so that the drain electrode may be physically separated from the graphene layer. Further, charges formed at the central region portion of the graphene layer are transmitted to the drain electrode through a substrate, so that high photosensitivity may be secured, and a high output voltage may be secured for the applied light. Accordingly, the drain electrode is formed at a side surface of the graphene layer, so that the size of the drain electrode may be easily controlled, and a high output voltage may be obtained.

Abstract: A semiconductor device according to the present invention comprises: a conductive substrate; a semiconductor structure disposed on the conductive substrate and comprising a first conductive-type semiconductor layer, a second conductive-type semiconductor layer, and an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; and a first electrode disposed on the semiconductor structure and electrically connected to the first conductive-type semiconductor layer, wherein the semiconductor structure further comprises a 1-1 conductive-type semiconductor layer between the first conductive-type semiconductor layer and the first electrode; and the top surface of the semiconductor structure comprises a flat part, on which the first electrode is disposed, and a concave-convex part surrounding the flat part, wherein a second distance, which is from the bottom surface of the semiconductor structure to the bottom surface of the concave-convex part cont

Abstract: To improve a wall plug efficiency in a nitride semiconductor light-emitting element for extracting ultraviolet light emitted from an active layer toward an n-type nitride semiconductor layer side to outside of the element.

Abstract: A quantum cascade laser of an embodiment includes a semiconductor stacked body in which a ridge waveguide is provided. The semiconductor stacked body includes an active layer including a quantum well region including a layer including Al; and the active layer emits laser light. The layer that includes Al includes first regions, and a second region interposed between the first regions; the first region includes Al oxide and reaches a prescribed depth inward from an outer edge of the active layer along a direction parallel to a surface of the active layer in a cross section orthogonal to the optical axis; and the second region does not include Al oxide.

Abstract: A semiconductor chip of a light emitting diode includes a substrate, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer stacked on the substrate successively, an N-type electrode electrically connected to the N-type gallium nitride layer, and a P-type electrode electrically connected to the P-type gallium nitride layer. The quantum well layer includes at least one quantum barrier and at least one quantum well stacked successively in sequence, wherein the growth pressure of the quantum barrier and the growth pressure of the quantum well are different, such that the interface crystal quality between the quantum well and the quantum barrier of the quantum well layer can be greatly improved to enhance the luminous efficiency of the semiconductor chip.

Abstract: A photonic structure is provided. The photonic structure includes a semiconductor substrate, a buried oxide layer over the semiconductor substrate, an optical coupling region over the buried oxide layer, and an oxide structure embedded in the semiconductor substrate. The optical coupling region is tapered toward a terminus of the optical coupling region located at an edge of the semiconductor substrate. The optical coupling region overlaps the oxide structure in a plan view.

Abstract: A light emitting device includes a substrate, a buffer layer, a first active layer, and a plurality of mesa regions. A portion of the first active layer includes a first electrical polarity. The plurality of mesa regions includes at least a portion of the first active layer, a light emitting region on the portion of the first active layer, and a second active layer on the light emitting region. A portion of the second active layer includes a second electrical polarity. The light emitting region is configured to emit light which has a target wavelength between 200 nm to 300 nm. A thickness of the light emitting region is a multiple of the target wavelength, and a dimension of the light emitting region parallel to the substrate is smaller than 10 times the target wavelength, such that the emitted light is confined to fewer than 10 transverse modes.

Abstract: A light emitting diode structure includes a semiconductor stack and a supporting breakpoint. The semiconductor stack includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The first semiconductor layer has a light emitting surface exposed outside and the light emitting surface has a rough texture. The light emitting layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the light emitting layer, and the second semiconductor layer has a type that is different from the first semiconductor layer. The supporting breakpoint is on the light emitting surface. The light emitting diode structure can be applied in wide color gamut (WCG) backlight module or ultra-thin backlight module.

Abstract: The nitride semiconductor light-emitting element comprises a light-emitting element structure portion having a plurality of nitride semiconductor layers including at least an n-type layer, an active layer and a p-type layer. The active layer has a quantum well structure comprising at least one well layer composed of a GaN-based semiconductor. In the well layer, the shortest distance between a first surface on the n-type layer side and a second surface on the p-type layer side varies in an orthogonal plane to the layering direction of the nitride semiconductor layers, and the peak emission wavelength of light emitted from the light-emitting element structure portion is shorter than 354 nm.

Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

Abstract: A light emitting photonic crystal having an organic light emitting diode and methods of making the same are disclosed. An organic light emitting diode disposed within a photonic structure having a band-gap, or stop-band, allows the photonic structure to emit light at wavelengths occurring at the edges of the band-gap. Photonic crystal structures that provide this function may include materials having a refractive index that varies periodically such as distributed Bragg reflectors, aligned nematic liquid crystals, and holographically recorded gratings.

Abstract: A wavelength conversion member includes: a substrate; a wavelength converter including phosphor particles excited by excitation light and a binder layer that fixes or adheres the adjacent phosphor particles to one another, the wavelength converter being provided on a front surface side of the substrate; and a light reflecting film that reflects fluorescent light radiated by the phosphor particles, the light reflecting film being provided on at least a part of an interface between the substrate and the wavelength converter, wherein a refractive index of the phosphor particles is larger than a refractive index of the binder layer. It is preferable that the binder layer include nanogaps which are voids with an average diameter of 300 nm or less in an inside.

Abstract: A light emitting element includes: a first conductivity type semiconductor layer; a second conductivity type semiconductor layer disposed over the first conductivity type semiconductor layer; a first electrode and a second electrode disposed over the second conductivity type semiconductor layer and spaced apart from each other; and a light emitting layer disposed over the second conductivity type semiconductor layer and, in a top view, positioned between the first electrode and the second electrode.

Abstract: A light emitting device includes a plurality of unit light emitting regions on a substrate. At least one of the unit light emitting regions includes at least one pair of first and second electrodes that are spaced apart, at least one first bar-type LED in a first layer on the substrate, and at least one second bar-type LED in a second layer on the substrate. At least one of the first bar-type LED or the second bar-type LED is electrically connected between the first electrode and the second electrode.

Abstract: The present invention provides a highly reliable, high-speed, and low-loss semiconductor optical modulation element that protects a pin junction structure in a modulation region against reverse voltage ESD by configuring an additional capacity having a thyristor structure between a plurality of feeding pad electrodes. An n-type contact layer, an n-type cladding layer, a non-doped core/cladding layer, a p-type cladding layer, and a p-type contact layer are sequentially laminated on the substrate surface. A Mach-Zehnder interferometric waveguide and a plurality of feeding pad installation sections are formed by dry etching. The n-type contact layer and the n-type cladding layer are removed except for a modulation region of the Mach-Zehnder interferometric waveguide and a feeding region in which the feeding pad installation sections are formed so that the modulation region and the semiconductor of the lower part of the feeding region are electrically isolated from each other.

Abstract: A barrier free quantum dot particles film includes a free standing layer comprising shielded quantum dot particles; wherein the shielded quantum dot particles are formed by shielding quantum dot particles by at least one shielding method; wherein the shielded quantum dot particles are characterized in resisting at least one condition selected from the group consisting of high temperature, high humidity and water; and wherein the shielded quantum dot particles are dispersed in an acrylate adhesive. A method of fabricating a barrier free quantum dot particles free standing film is also disclosed. The method of fabrication of shielded quantum dot particles film on a light emitting diode (LED) lens is also disclosed.

Abstract: Disclosed is a color conversion layer including at least one light emitting material including at least one composite particle surrounded partially or totally by at least one surrounding medium; wherein the light emitting material is configured to emit light in response to an excitation and the at least one composite particle includes a plurality of nanoparticles encapsulated in an inorganic material; and wherein the inorganic material has a difference of refractive index compared to the at least one surrounding medium superior or equal to 0.02 at 450 nm. Also disclosed is a display apparatus.

Abstract: A light emitter is formed from nanoparticles including a compound semiconductor containing an Ag component, In component, and Se component. The peak wavelength of the emission intensity falls within the range of 700 to 1400 nm, and the half-value width ?H for the peak wavelength is 100 nm or less. The light emitted is configured to emit strong light in the near-infrared region, and which is capable of detecting biological information, and is preferred for bioimaging.

Abstract: A high electron mobility transistor device includes a substrate, a plurality of pairs of alternating layers, at least one stress-relief layer and a gallium nitride layer. The plurality of pairs of alternating layers is disposed over the substrate, and each pair of alternating layers includes a carbon-doped gallium nitride layer and an undoped gallium nitride layer. The stress-relief layer is disposed between the pairs of alternating layers. The gallium nitride layer is disposed over the alternating layers.

Abstract: A method of producing radiation-emitting semiconductor components includes arranging radiation-emitting semiconductor chips on a conversion layer; thickening the conversion layer next to and between the semiconductor chips by applying a filling compound containing phosphor, wherein the thickened conversion layer adjoins a front side and side faces of the semiconductor chips; forming a reflective layer on the conversion layer and on the semiconductor chips in a region of a rear side of the semiconductor chips, wherein a rear-side surface of the contacts of the semiconductor chips remains uncovered; and severing the reflective layer and the conversion layer to form singulated semiconductor components including a single semiconductor chip, a part of the conversion layer arranged on the front side and on the side faces of the semiconductor chip, and a part of the reflective layer arranged in the region of the rear side on the semiconductor chip and on the conversion layer.

Abstract: A method and system for assembling a device by picking up semiconductor devices from a carrier substrate and placing the semiconductor devices onto a target substrate. The transfer of the semiconductor devices uses fluid as a transfer medium. The fluid enters a fluid channel of a pickup head, causing the pickup head to expand, make contact with, and attach to an aligned semiconductor device. After the semiconductor device is aligned with and placed onto the target substrate, at least a portion of the fluid is removed from the pickup head to release the semiconductor device onto the target substrate. The semiconductor device bonds to the target substrate.

Abstract: The present disclosure describes aspects of a dual-use semiconductor device for solar power and data storage. In some aspects, a dual-use semiconductor device is selectively configured to generate power by coupling regions having a same type of doping to form a PN junction by which power is generated in response to light. The generated power may be provided to a load coupled to contacts (e.g., front and backside contacts) of the dual-use semiconductor device. The dual-use semiconductor device is also selectively configurable for data storage by decoupling the regions of the same type of doping to provide respective data storage access terminals for accessing (e.g., writing or reading) a bit value that is stored as a level of charge by a floating-gate structure of the dual-use semiconductor device. By so doing, solar power arrays implemented with dual-use semiconductor devices may also provide data storage functionality.

Abstract: The present invention discloses a light emitting diode (LED) backlight device and LED display device, including a plurality of backlight partitions; a reflective material layer covering a surface of the backlight substrate; a plurality of metal traces disposed within the backlight partitions and disposed between the backlight substrate and the reflective material layer; a plurality of pad openings penetrating from a surface of the reflective material layer to a surface of the metal traces. An orthographic projection of the pad openings projected toward the backlight substrate is completely within an area of the metal traces; and a plurality of solder paste application regions located in the pad openings. The LED display device assembled by the LED backlight device according to the present invention improves the yield of solder paste printing and die bonding, improves the light reflection, reduces the loss of light energy, and improves the light efficiency.

Abstract: The invention provides a TFT array substrate and display panel. The TFT array substrate comprises: a patterned metal oxide active layer, a patterned gate metal layer, and a patterned source/drain metal layer; and further comprises at least a patterned hydrogen-absorbing metal layer, a dielectric layer is disposed between the hydrogen-absorbing metal layer and the patterned metal oxide active layer. The TFT array substrate and display panel of the invention can reduce reaction between the hydrogen atoms and the active layer of metal oxide TFT to achieve improving reliability of TFT.

Abstract: A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.

Abstract: The array of gallium-nitride (GaN) nanocolumns have quantum wells in a polar c-plane or in a semi-polar plane to emit light directed to ends of the nanocolumns and an interstitial filler material with light emitted in the nanocolumns being guided to exit from an end of the nanocolumns.

Abstract: Gate-all-around integrated circuit structures having depopulated channel structures, and methods of fabricating gate-all-around integrated circuit structures having depopulated channel structures, are described. For example, an integrated circuit structure includes a first vertical arrangement of nanowires and a second vertical arrangement of nanowires above a substrate, the first vertical arrangement of nanowires having a greater number of active nanowires than the second vertical arrangement of nanowires, and the first and second vertical arrangements of nanowires having co-planar uppermost nanowires. The integrated circuit structure also includes a first vertical arrangement of nanoribbons and a second vertical arrangement of nanoribbons above the substrate, the first vertical arrangement of nanoribbons having a greater number of active nanoribbons than the second vertical arrangement of nanoribbons, and the first and second vertical arrangements of nanoribbons having co-planar uppermost nanoribbons.

Abstract: A method for manufacturing a micro light emitting diode device is provided. A plurality of first type epitaxial structures are formed on a first substrate and the first type epitaxial structures are separated from each other. A first connection layer and a first adhesive layer are configured between the first type epitaxial structures and the first substrate. The first connection layer is connected to the first type epitaxial structures. The first adhesive layer is located between the first connection layer and the first type epitaxial substrate. The Young's modulus of the first connection layer is larger than the Young's modulus of the first adhesive layer. The first connection layer located between any two adjacent first type epitaxial structures is removed so as to form a plurality of first connection portions separated from each other. Each of the first connection portions is connected to the corresponding first type epitaxial structure.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include Ill nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: A lighting system includes a plurality of light sources; an elongated luminescent body defining a length (L) and a height or diameter (H), and having a light input face, a light output face, and at least one side face bridging the height or diameter (H); a garnet type A3B5O12 luminescent material including trivalent cerium, provided in the elongated luminescent body with a height dependent concentration range defined by a minimum concentration ymin=0.036*x?1 and a maximum concentration ymax=0.17*x?1, where y is the trivalent cerium concentration in % relative to the A element, and x is the height (H) in mm; at least one heat transfer elements in thermal contact with the elongated luminescent body; and a reflector provided opposite the light sources on the elongated luminescent body. The garnet type A3B5O12 luminescent material converts at least part of light from the light sources into converted light.

Abstract: This organic EL element has one blue light emitting unit, and has a continuous emission spectrum. The organic EL element has one or two peak wavelengths in a blue light wavelength range of 440 nm-490 nm within this emission spectrum, the correlated color temperature of white light is 3300K or greater, and according to a special color rendering index (Ri) of white light, R6 is 60 or greater and R12 is 30 or greater.

Abstract: A display panel is provided. The display panel may include a plurality of light emitting diodes (LEDs); a thin film transistor (TFT) substrate configured to include a first connection pad and on which the plurality of LEDs are disposed, the plurality of LEDs being disposed in a predetermined region of an upper surface of the TFT substrate, and the first connection pad being disposed in another region of the upper surface of the TFT substrate and electrically connected to each of the plurality of LEDs; a transparent plate configured to be disposed on the TFT substrate and include a second connection pad, and a driver configured to be electrically connected to the second connection pad and be disposed in an outer region of the transparent plate.

Abstract: The present invention discloses preparation of a reflective image component and application method thereof. A reflective image component in the present invention consists of a metallic semi-continuous thin film, a porous alumina film and a high reflective metal substrate. The structure is easy in preparation, low in cost, environmental friendly regarding preparing procedures and suitable for large-scale fabrication, which plays a significant role in developing a next generation of image component; the minimum pixel in the image obtained is able to reach nano level, much smaller than the pixel in most of the self-luminous screens at present; the image also provides the ability of reversible color transformations, which can be applied to information encryption and trademark decoration and the like.

Abstract: A micro light emitting device display apparatus including a circuit substrate, a plurality of epitaxial structures, a plurality of contact pads and a plurality of light shielding patterns is provided. The plurality of epitaxial structures are dispersedly arranged on the circuit substrate. The plurality of contact pads are disposed between the plurality of epitaxial structures and the circuit substrate. The plurality of epitaxial structures are electrically connected to the circuit substrate via the plurality of contact pads respectively. The plurality of light shielding patterns and the plurality of contact pads are alternately arranged on the circuit substrate, and each of the light shielding patterns is connected between two adjacent contact pads without overlapping with the contact pads and is adapted to block light with a wavelength ranging from 150 nm to 400 nm from penetrating through. A method of fabricating the micro light emitting device display apparatus is also provided.

Abstract: An integrated enhancement/depletion mode high electron mobility transistor (HEMT) includes a substrate, a first buffer layer, a first barrier layer, a first channel layer, a first source, a first drain, a first gate, a second buffer layer, a second barrier layer, a second channel layer, a second source, a second drain, and a second gate. The first buffer layer is on the substrate. The first barrier layer is on a first area of the first buffer layer, the first channel layer is on the first barrier layer, and the first source, the first drain, and the first gate are on the first channel layer. The second buffer layer is on a second area of the first buffer layer, the second bather layer is on the second buffer layer, the second channel layer is on the second barrier layer, and the second source, the second drain, and the second gate are on the second channel layer.

Abstract: A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A method is provided for solving a computational problem that is reducible to a problem of counting solutions to an associated decision problem. The method includes estimating a number of the solutions to the decision problem using a quantum computer by determining if there is at least one simultaneous solution to both (i) the decision problem and (ii) an associated hashing problem. The method also includes increasing a precision of the estimated number of the solutions to the decision problem using the quantum computer by determining if there are multiple solutions to the decision problem that are simultaneously solutions to the associated hashing problem. The method further includes outputting or using the estimated number of the solutions to the decision problem as a solution to the computational problem.

Abstract: A display device includes a light source to emit light, a light guide plate on which the light emitted from the light source is incident and which irradiates light through a first and a second surface of the light guide plate, a quantum dot sheet on which the light irradiated through the first surface of the light guide plate is incident and which irradiates blue light, green light and red light, a reflective sheet for reflecting the irradiated light to the light guide plate, and a light-converting material at an edge portion of the light guide plate, the quantum dot sheet and the reflective sheet, for converting the light into a yellow light, green light or red light. The light incident on the quantum dot sheet includes the light emitted from the light source and the yellow light, the green light or the red light.