High Resistivity Channel (e.g., Accumulation Mode) Or Surface Channel (e.g., Transfer Of Signal Charge Occurs At The Surface Of The Semiconductor) Or Minority Carriers At Input (i.e., Surface Channel Input) Patents (Class 257/218)
  • Patent number: 5289022
    Abstract: A CCD shift register which is improved in the transfer efficiency with a minimal decrease in the amount of electric charge that can be handled. The CCD shift register has an array of transfer electrodes, each comprising a pair of storage and transfer gate electrodes, which are formed on a semiconductor substrate through a gate insulator. A semiconductor region under each storage gate electrode is divided into a plurality of subregions by using impurities.
    Type: Grant
    Filed: May 13, 1992
    Date of Patent: February 22, 1994
    Assignee: Sony Corporation
    Inventors: Tetsuya Iizuka, Naoki Nishi, Tetsuro Kumesawa
  • Patent number: 5192990
    Abstract: An output circuit for sequentially receiving and converting charge collected in the photoelements of an image sensor and converting such charge into an output voltage. The output circuit includes a buried-channel LDD transistor having gate, source and drain electrodes. The source electrode provides a floating diffusion. When the transistor is turned off, a potential well is provided in the floating diffusion which collects charge. An output source-follower amplifier also employing buried-channel LDD transistors is connected to the floating diffusion and produces the output voltage.
    Type: Grant
    Filed: June 17, 1991
    Date of Patent: March 9, 1993
    Assignee: Eastman Kodak Company
    Inventor: Eric G. Stevens