Abstract: A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor.

Abstract: A capturing device includes an image sensor that generates an image signal by performing photoelectric conversion for light from a subject, a control unit that generates a setting value for setting a range where an image resulting from the image signal is cut, based on a first instruction input from a user, a setting value storage unit that stores the setting value generated by the control unit, an image conversion unit that reads the setting value from the setting value storage unit, and cuts a specific region specified by the setting value from the image and enlarges the cut region, when there is a second instruction input from the user, and an output unit that converts a signal of the image cut and enlarged by the image conversion unit into an image signal of a predetermined format and outputs the converted image signal.

Abstract: The present disclosure relates to an imaging element and an electronic apparatus configured to achieve higher-resolution image taking. The imaging element includes: a photoelectric conversion portion provided in a semiconductor substrate for each pixel that performs photoelectric conversion on light that enters through a filter layer; an element isolation portion configured to separate the photoelectric conversion portions of adjacent pixels; and an inter-pixel light shielding portion disposed between the pixels in a layer and provided between the semiconductor substrate and the filter layer and separated from a light receiving surface of the semiconductor substrate by a predetermined interval. Moreover, an interval between the light receiving surface of the semiconductor substrate and a tip end surface of the inter-pixel light shielding portion is smaller than a width of the tip end surface of the inter-pixel light shielding portion.

Abstract: Image sensors are provided. Image sensors may include unit pixels arranged in a first direction and a second direction crossing the first direction. Each of the unit pixels may include first and second floating diffusion regions and first and second photo gate electrodes between the first and second floating diffusion regions. The unit pixels may include a first unit pixel, a second unit pixel, and a third unit pixel sequentially arranged. The first floating diffusion region of the second unit pixel may be between the first photo gate electrode of the first unit pixel and the first photo gate electrode of the second unit pixel, and the second floating diffusion region of the second unit pixel may be between the second photo gate electrode of the second unit pixel and the second photo gate electrode of the third unit pixel.

Abstract: In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.

Abstract: Method for activating a feature of a chip having an interface comprising at least two power pins. The method comprises the following steps: the chip measures a series of voltage values between said power pins, the chip detects a series of sync signals different from clock signals, said sync signals being interleaved with said voltage values, the chip identifies a data sequence from said series of voltage values, and the chip activates the feature only if the data sequence matches a predefined pattern.

Abstract: A capturing device includes an image sensor that generates an image signal by performing photoelectric conversion for light from a subject, a control unit that generates a setting value for setting a range where an image resulting from the image signal is cut, based on a first instruction input from a user, a setting value storage unit that stores the setting value generated by the control unit, an image conversion unit that reads the setting value from the setting value storage unit, and cuts a specific region specified by the setting value from the image and enlarges the cut region, when there is a second instruction input from the user, and an output unit that converts a signal of the image cut and enlarged by the image conversion unit into an image signal of a predetermined format and outputs the converted image signal.

Abstract: The present disclosure provides a method for packaging a camera assembly. The method includes: providing a photosensitive chip; mounting an optical filter on the photosensitive chip; temporarily bonding the photosensitive chip and functional components on a carrier substrate, where the photosensitive chip has soldering pads facing away from the carrier substrate and the functional components have soldering pads facing toward the carrier substrate; forming an encapsulation layer covering the carrier substrate, the photosensitive chip, and the functional components, and exposing the optical filter; after the encapsulation layer is formed, removing the carrier substrate; and after the carrier substrate is removed, forming a redistribution layer structure on a side of the encapsulation layer facing away from the optical filter to electrically connect the soldering pads of the photosensitive chip with the soldering pads of the functional components.

Abstract: An image sensor includes a photoelectric conversion layer including a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements adjacent to the first photoelectric conversion elements. A light shield layer shields the second photoelectric conversion elements and has respective openings therein that provide light transmission to respective ones of the first photoelectric conversion elements. The image sensor further includes an array of micro-lenses on the photoelectric conversion layer, each of the micro-lenses overlapping at least one of the first photoelectric conversion elements and at least one of the second photoelectric conversion elements.

Abstract: A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor.

Abstract: A semiconductor device comprises a stack structure comprising decks each comprising a memory level comprising memory elements, a control logic level vertically adjacent and in electrical communication with the memory level and comprising control logic devices configured to effectuate a portion of control operations for the memory level, and an additional control logic level vertically adjacent and in electrical communication with the memory level and comprising additional control logic devices configured to effectuate an additional portion of the control operations for the memory level. A memory device, a method of operating a semiconductor device, and an electronic system are also described.

Abstract: The solid-state image pickup element includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel.

Abstract: A complementary metal-oxide-semiconductor depth sensor element having a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on two sides of the photogate in intervals. A first floating doped area and a second floating doped area are formed respectively on the outer sides of the first transfer gate and the second transfer gate. A semiconductor area is formed on the substrate. A lightly doped region is formed on the semiconductor area. The photogate, the first and second transfer gates and the first and second floating doped area are commonly formed on the lightly doped region. With the lightly doped region, the linear performance that the majority carriers move in the photogate is also affected to achieve the purpose for increasing the reaction rate.

Abstract: An imaging device comprises a first pixel disposed in a substrate. The first pixel may include a first material disposed in the substrate, and a second material disposed in the substrate. A first region of the first material, a second region of the first material, and a third region of the second material form at least one junction. A first lateral cross section of the substrate intersects the at least one junction, and a second lateral cross section of the substrate intersects at least one fourth region of the first material.

Abstract: Provided are an imaging device, method, and a non-transitory recording medium, which simultaneously image a plurality of images and obtain images having enlarged dynamic ranges by using an imaging system, comprising a directional sensor in which light receiving sensors have directivity with respect to incidence angles of light rays. Image signals of first and second light receiving sensors are obtained in a state in which second incidence rays of an imaging lens are shielded from a directional sensor in which a ratio of sensitivity between the first and the second light receiving sensors with respect to first incidence rays incident through a first optical system of the imaging lens is M:1, and a third image having a dynamic range which is equal to or less than M times a dynamic range of a first image using the image signals of the first light receiving sensors is generated.

Abstract: Device architectures based on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either in near-interface deep ambipolar states or in quantum wells/dots, either serving as ambipolar traps in semiconductor layers or in gate dielectric/barrier layers. In either case, the potential barrier for trapping is small and retention is provided by carrier confinement in the deep trap states and/or quantum wells/dots. The device architectures are usable as three terminal or two terminal devices.

Abstract: A solid-state imaging device according to the present disclosure includes: a semiconductor base; a photoelectric conversion element provided in the semiconductor base; a photoelectric conversion film arranged on a light receiving surface side of the semiconductor base; a contact section to which a signal charge generated in the photoelectric conversion film is read, the contact section being provided in the semiconductor base; a first film member covering the photoelectric conversion element; and a second film member provided on the contact section.

Abstract: In a range image sensor, a plurality of range sensors are disposed in a one-dimensional direction. The plurality of range sensors include a photogate electrode, first and second signal charge accumulating regions disposed on one side of the photogate electrode, third and fourth signal charge accumulating regions disposed on the other side, first transfer electrodes for making charge flow into the first and fourth signal charge accumulating regions in response to a first transfer signal, and second transfer electrodes for making charge flow into the second and third signal charge accumulating regions in response to a second transfer signal.

Abstract: An image acquisition device reciprocates a focal position of an objective lens with respect to a sample in the optical axis direction of the objective lens, while moving a field position of the objective lens with respect to the sample. This makes it possible to acquire contrast information of image data at the field position of the objective lens sequentially as the field position moves with respect to the sample. The image acquisition device acquires the image data by the rolling readout of the image pickup element according to the reciprocation of the focal position of the objective lens.

Abstract: In an image acquisition device, an optical path difference generating member can form an optical path length difference of a second optical image without splitting light in a second optical path. This can suppress the quantity of light required for the second optical path to obtain information of the focal position, whereby a quantity of light can be secured for a first imaging device to capture an image. The image acquisition device synchronizes the movement of a predetermined part of a sample within a field of an objective lens with rolling readout such that each pixel column of a second imaging device is exposed to an optical image of the predetermined part in the sample.

Abstract: The solid-state imaging device includes a semiconductor layer, an electrode, a wiring layer, a plurality of filters, an input terminal, and a voltage generation circuit. The voltage generation circuit generates a first voltage and a second voltage. The plurality of filters include a first filter and a second filter. The light transmittance of the first filter has a peak in a wavelength range corresponding to blue. The light transmittance of the second filter has a peak at a wavelength of 450 nm or more, and in the second filter, the transmittance of light having a wavelength of 450 nm or less is greater than the minimum value of the transmission of light having a wavelength longer than 450 nm. The first voltage and the second voltage are selectively applied to the electrode.

Abstract: A method of binning charges in a charge coupled device (CCD) image sensor is described. The frequency at which an HCCD in the CCD image sensor is clocked may be a multiple of the frequency at which a summing element coupled to the end of the HCCD is clocked, such that charges may be binned at a gate within the HCCD or at the summing element before being read out. The clock signal for the summing element may have a 50% duty cycle in order to provide additional time for charge to flow across an output gate to a floating diffusion node in an output stage of the CCD image sensor. For cases where the HCCD clock frequency is more than twice the summing element clock frequency, charges may be binned at the summing element. Otherwise, charges may be binned at another gate within the HCCD.

Abstract: A sensor package comprises a sensor chip bonded to an intermediate carrier, with the sensor element over an opening in the carrier. The package is for soldering to a board, during which the intermediate carrier protects the sensor part of the sensor chip.

Abstract: An image sensor assembly having a sensor window positioned in front of an image sensor, having structure and/or characteristics to prevent the formation of condensation on the sensor window. Structure to prevent the formation of condensation includes thin films which can have anti-condensation, anti-reflective, electrically conductive, and/or thermally conductive properties. The sensor window can further have a textured surface to displace water so as to avoid condensation formation on the window surface. The sensor window, and in some embodiments a frame, can be maintained at an elevated temperature proximate to the image sensor during operation to prevent the formation of condensation.

Abstract: A photoelectric conversion apparatus includes a semiconductor substrate having one principle surface including recessed portions, and insulation bodies in the recessed portions. The semiconductor substrate includes photoelectric conversion elements each of which includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the second conductivity type which has at least a portion disposed nearer to the principle surface relative to the second semiconductor region. The second semiconductor region has a polarity of signal charge. The second semiconductor region is in contact with the first and third semiconductor regions. Signal charge paths are disposed between the recessed portions in a cross section perpendicular to the principle surface. At least one of the second and third semiconductor regions is positioned in directions of at least two of the signal charge paths.

Abstract: An imaging device is provided, in which the dynamic range of still pictures can be suppressed from being decreased. In the imaging device, a photodiode including an n-type impurity region and a photodiode including an n-type impurity region are formed in a p-type well. An n-type impurity region is formed between the n-type impurity region on one side and that on the other side so as to contact each of the two. The impurity concentration of the last-formed n-type impurity region is set to be lower than those of the first-formed n-type impurity regions.

Abstract: A sensor package structure includes a substrate, a sensing member, a shielding member, a metallic wire, and an encapsulating compound. The substrate includes a die bonding zone and a wiring zone. The sensing member is mounted on the die bonding zone and includes a sensing zone, a carrying zone arranged around the sensing zone, and a connecting zone arranged outside of the carrying zone. The shielding member includes a translucent covering portion and a supporting portion connected to a peripheral portion of the covering portion. The supporting portion having a coefficient of thermal expansion less than 10 ppm/° C. is fixed on the carrying zone. The metallic wire connects the wiring zone and the connecting zone. The encapsulating compound is disposed on the wiring zone and covers a peripheral side of the sensing member, the connecting zone, and a peripheral side of the shielding member.

Abstract: Provided is an image sensor having improved performance. An image sensor in accordance with an embodiment of the present invention including a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each of the plurality of pixels may include: a photoelectric conversion element formed in a substrate; a transfer gate overlapping with a portion of the photoelectric conversion element and formed on the substrate; and a color filter over the photoelectric conversion element, wherein the plurality of pixels include two adjacent pixels which have the same color filter, and wherein one of the two adjacent pixels comprises an incident light control pattern.

Abstract: A solid-state imaging device includes a P-well, a gate insulating film, a gate electrode, a P+-type pinning layer that is located in the P-well so as to be outside the gate electrode and start from a first end portion of the gate electrode, a P?-type impurity region that is located in the P-well so as to extend under the gate electrode from a first end portion side and be in contact with the pinning layer, an N?-type impurity region that is located in the P-well so as to extend under the pinning layer and the P?-type impurity region and be in contact with the P?-type impurity region and the gate insulating film, and an N+-type impurity region that is located in the P-well and includes a portion that is under a second end portion of the gate electrode.

Abstract: A solid-state imaging device includes a P-well, a gate insulating film, a gate electrode, a P+-type pinning layer that is located in the P-well so as to be outside the gate electrode and start from a first end portion of the gate electrode, a P?-type impurity region that is located in the P-well so as to extend under the gate electrode from a first end portion side and be in contact with the pinning layer, an N?-type impurity region that is in contact with the P?-type impurity region and the gate insulating film, and an N??-type impurity region that surrounds at least a portion of the N?-type impurity region in plan view.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a substrate. The substrate includes an electrode layer, an insulating layer arranged on the electrode layer, and a semiconductor layer arranged on the insulating layer. The semiconductor layer includes a first semiconductor region of a first conductivity type, a second semiconductor region configured to accumulate charges generated by photoelectric conversion, the second semiconductor region being arranged on the first semiconductor region and having a second conductivity type opposite to the first conductivity type, and a third semiconductor region of the second conductivity type to which the charges accumulated in the second semiconductor region are transferred.

Abstract: A method of forming a fine electrode, including: forming a base part on a substrate; disposing a transparent electrode solution at a boundary portion between a circumferential surface of the base part and an upper surface of the substrate; forming a transparent electrode by partially removing the transparent electrode solution; and removing the base part from the substrate.

Abstract: A distance sensor includes: a light receiving area including a first longer side and a second longer side; a photo gate electrode arranged on the light receiving area; a plurality of signal charge collection regions along the first longer side; a plurality of signal charge collection regions along the second longer side; a plurality of transfer electrodes along the first longer side provided with charge transfer signals having mutually-differing phases; a plurality of transfer electrodes along the second longer side provided with the charge transfer signals having mutually-differing phases; and a potential adjusting means positioned between the first and second longer sides and raises potential of an area extending in a direction in which the first and second longer sides extend to be higher than potential of side areas of the first and second longer sides.

Abstract: A solid-state imaging device includes a pixel having a photoelectric conversion element which generates a charge in response to incident light, a first transfer gate which transfers the charge from the photoelectric conversion element to a charge holding section, and a second transfer gate which transfers the charge from the charge holding section to a floating diffusion. The first transfer gate includes a trench gate structure having at least two trench gate sections embedded in a depth direction of a semiconductor substrate, and the charge holding section includes a semiconductor region positioned between adjacent trench gate sections.

Abstract: An imaging device that stores charge from a photosensor under at least one storage gate. A driver used to operate the at least one storage gate, senses how much charge was transferred to the storage gate. The sensed charge is used to obtain at least one signature of the image scene. The at least one signature may then be used for processing such as e.g., motion detection, auto-exposure, and auto-white balancing.

Abstract: Photodetector devices and methods for making the photodetector devices are disclosed herein. In an embodiment, the device may include a substrate; and one or more core structures, each having one or more shell layers disposed at least on a portion of a sidewall of the core structure. Each of the one or more structures extends substantially perpendicularly from the substrate. Each of the one or more core structures and the one or more shell layers form a Schottky barrier junction or a metal-insulator-semiconductor (MiS) junction.

Abstract: An imaging device includes a semiconductor substrate; and a unit pixel cell provided to a surface of the semiconductor substrate. The unit pixel cell includes: a photoelectric converter that includes a pixel electrode and a photoelectric conversion layer located on the pixel electrode, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate and detects the electric charges; and a reset transistor that includes a first gate electrode and initializes a voltage of the photoelectric converter. The pixel electrode is located above the charge detection transistor. The reset transistor is located between the charge detection transistor and the pixel electrode. When viewed from a direction normal to the surface of the semiconductor substrate, the pixel electrode covers an entire portion of the first gate electrode.

Abstract: Integrated circuit (IC), and method of forming an IC, in which a photodiode having a photodiode output is coupled to a column line. A transfer transistor is coupled to the photodiode and to the column line. A first reset transistor is coupled to the photodiode and to the column line at a first node. The first node is between the transfer transistor and the column line. A second reset transistor is coupled to the photodiode and to the column line at a second node. The second node is between the first node and the column line. A source follower transistor is coupled to the photodiode and to the column line. The source follower transistor is between the second node and the column line. A level shifter is coupled to the photodiode and to the column line. The level shifter is between the first node and the second node.

Abstract: Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.

Abstract: An image sensing module includes an image sensing unit, a light transmitting unit, a substrate unit and lens unit. The image sensing unit includes an image sensing element having an image sensing area on the top side of the image sensing element. The light transmitting unit includes a light transmitting element supported above the image sensing element by a plurality of support members. The substrate unit includes a flexible substrate disposed on the image sensing element and electrically connected to the image sensing element through a plurality of electrical conductors, and the flexible substrate has at least one through opening for receiving the light transmitting element. The lens unit includes an opaque holder disposed on the flexible substrate to cover the light transmitting element and a lens assembly connected to the opaque holder and disposed above the light transmitting element.

Abstract: A solid-state imaging device including, active elements configured to handle the charge captured in a photoreceiving region, an element isolation region configured to isolate regions of the active element, a first impurity region configured to surround the element isolation region, and a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements.

Abstract: A range image sensor capable of improving its aperture ratio and yielding a range image with a favorable S/N ratio is provided. A range image sensor RS has an imaging region constituted by a plurality of one-dimensionally arranged units on a semiconductor substrate 1 and yields a range image according to a charge amount issued from the units.

Abstract: A charge-coupled unit formed in a semiconductor substrate and including an array of identical electrodes forming rows and columns, wherein: each electrode extends in a cavity with insulated walls formed of a groove, oriented along a row, dug into the substrate thickness, and including, at one of its ends, a protrusion extending towards at least one adjacent row.

Abstract: A method of manufacturing a semiconductor device includes the steps of forming a gate electrode of a transistor on an insulator layer on a surface of a semiconductor substrate, forming an isolation region by performing ion implantation of an impurity of a first conductivity type into the semiconductor substrate, forming a lightly doped drain region by performing, after forming a mask pattern including an opening portion narrower than a width of the gate electrode on an upper layer of the gate electrode of the transistor, ion implantation of an impurity of a second conductivity type near the surface of the semiconductor substrate with the mask pattern as a mask, and forming a source region and a drain region of the transistor by performing ion implantation of an impurity of the second conductivity type into the semiconductor substrate after forming the gate electrode of the transistor.

Abstract: In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is fanned and/or slanted, a dark pixel region that is unfanned and unslanted, a horizontal CCD, and an output structure for conversion of charge to voltage.

Abstract: In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is fanned and/or slanted, a dark pixel region that is unfanned and unslanted, a horizontal CCD, and an output structure for conversion of charge to voltage.

Abstract: A global shutter pixel cell includes a serially connected anti-blooming (AB) transistor, storage gate (SG) transistor and transfer (TX) transistor. The serially connected transistors are coupled between a voltage supply and a floating diffusion (FD) region. A terminal of a photodiode (PD) is connected between respective terminals of the AB and the SG transistors; and a terminal of a storage node (SN) diode is connected between respective terminals of the SG and the TX transistors. A portion of the PD region is extended under the SN region, so that the PD region shields the SN region from stray photons. Furthermore, a metallic layer, disposed above the SN region, is extended downwardly toward the SN region, so that the metallic layer shields the SN region from stray photons. Moreover, a top surface of the metallic layer is coated with an anti-reflective layer.

Abstract: A method of manufacturing an image pickup device includes a step of forming a filling member such that the filling member covers a light guiding part and a peripheral part provided in a film. The light guiding part is positioned on an image pickup region of the image pickup device and has openings that correspond to respective photoelectric conversion portions. The peripheral part is positioned on a peripheral region of the image pickup device. The filling member fills in the openings. The method includes a step of processing the filling member. The method includes a step of forming light guiding members, which is performed after the step of processing filling member has been performed, by a polishing process performed on the filling member so that the light guiding part is exposed. The light guiding members are part of the filling member and disposed in the openings.

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

Abstract: Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.