Abstract: A diode protected semiconductor device appropriate for the output of a radio frequency amplifier, which can withstand substantial power reflection due to output impedance mismatch, is provided. The device may be implemented monolithically, in the form of a field effect transistor (FET) (14) having a back to back diode pair (17) connecting the drain (18) to the source (19). The FET comprises multiple transistor portions (28) coupled together. The diode pair comprises corresponding diode pair portions (37) coupled together. The configuration provides easy integration of the diode pair (17) into typical FET structures.

Abstract: An improved high-frequency high-power transistor includes a transistor chip and capacitors forming an RF shunting internal matching circuit. The capacitors are connected with RF shunting wires to a collector pad to which the transistor chip is die-bonded. The wires have the same lengths and are disposed symmetrically relative to input and output leads of transistor cells within said transistor chip so that they uniformly influence the transistor cells.

Abstract: A layout of a MOSFET current driver is disclosed which improves the fabrication yield and the current drive capability over that of the prior art while keeping the layout area the same as the prior art. In this design, the gate is laid out to have a lateral serpentine pattern rather than a vertical serpentine pattern to create a larger gate in order to improve the current drive capability. In addition, the contacts for the drain and the contacts for the source are removed from the gate layout area which facilitates condensing the gate layout and increasing the size of the gate. Also, this design has only two metal strips: one for the drain and one for the source of the MOSFET current driver. The two metal strips substantially overlap the serpentine patterned gate. Having only two metal strips reduces the spaces between the metal strips to one space thereby reducing the probability of having a short or a defect and improving the fabrication yield.