With Lightly Doped Portion Of Drain Region Adjacent Channel (e.g., Ldd Structure) Patents (Class 257/344)
  • Patent number: 10720513
    Abstract: Methods of forming a compact FDSOI OTP/MTP cell and a compact FinFET OTP/MTP cell and the resulting devices are provided. Embodiments include forming a SOI region or a fin over a BOX layer over a substrate; forming a first and a second gate stack, laterally separated, over respective portions of the SOI region or the fin; forming a first and a second liner along each first and second sidewall and of the first and the second gate stack, respectively, the second sidewall over respective portions of the SOI region or the fin; forming a spacer on each first and second liner; forming a S/D region in the SOI region or the fin between the first and the second gate stack; forming a CA over the S/D region; utilizing each gate of the first gate stack and the second gate stack as a WL; and connecting a BL to the CA.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: July 21, 2020
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Eng Huat Toh, Shyue Seng Tan, Elgin Kiok Boone Quek
  • Patent number: 10707080
    Abstract: A method of forming patterns includes the steps of providing a substrate on which a target layer and a hard mask layer are formed; forming a plurality of first resist patterns on the hard mask layer; performing a tilt-angle ion implant process to form a first doped area and a second doped area in the hard mask layer between adjacent first resist patterns; removing the first resist patterns; coating a directed self-assembly (DSA) material layer onto the hard mask layer; performing a self-assembling process of the DSA material layer to form repeatedly arranged block copolymer patterns in the DSA material layer; removing undesired portions from the DSA material layer to form second patterns on the hard mask layer; transferring the second patterns to the hard mask layer to form third patterns; and etching the target layer through the third patterns.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: July 7, 2020
    Assignee: Micron Technology, Inc.
    Inventor: Kuo-Yao Chou
  • Patent number: 10700106
    Abstract: A display device including a semiconductor element is provided.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Murakami, Masahiko Hayakawa, Shunpei Yamazaki
  • Patent number: 10685886
    Abstract: A method of forming a logic device and a power device on a substrate is provided. The method includes forming a first vertical fin on a first region of the substrate and a second vertical fin on a second region of the substrate, wherein an isolation region separates the first region from the second region, forming a dielectric under-layer segment on the second vertical fin on the second region, and forming a first gate structure on the dielectric under-layer segment and second vertical fin on the second region.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: June 16, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Juntao Li, Kangguo Cheng, Liying Jiang, John G. Gaudiello
  • Patent number: 10672912
    Abstract: The disclosure provides an N-type thin film transistor, including a poly-silicon layer, a gate layer, a source and a drain. The poly-silicon layer includes a channel region, a source region and a drain region at two side of the channel region. The gate layer is on the channel region, a projection of the gate layer on the poly-silicon layer partially overlaps the source region and the drain region, and a thickness of the gate layer on the source region and the drain region are smaller than a thickness of the gate layer on the channel region. The source region and the drain region both include a heavily-doping region and a lightly-doping region connected to the heavily-doping region, the source and the drain are respectively on the heavily-doping region of the source region and the drain, and respectively electrically connects to the heavily-doping region of the source region and the drain.
    Type: Grant
    Filed: November 2, 2017
    Date of Patent: June 2, 2020
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Lei Yu, Songshan Li
  • Patent number: 10658488
    Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. The work-function metal layer has a first thickness. A pre-treatment process of the work-function metal layer may then performed, where the pre-treatment process removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. The treated work-function metal layer has a second thickness less than the first thickness. In various embodiments, after performing the pre-treatment process, another metal layer is deposited over the treated work-function metal layer.
    Type: Grant
    Filed: May 14, 2018
    Date of Patent: May 19, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Yi Lee, Cheng-Yen Tsai, Da-Yuan Lee
  • Patent number: 10629435
    Abstract: Methods and apparatuses for patterning substrates using a positive patterning scheme are described herein. Methods involve receiving a substrate having a patterned core material, depositing a doped spacer material conformally over the patterned core material, selectively etching the core material to the doped spacer material to form a spacer mask, and using the spacer mask to etch a target layer on the substrate. Spacer materials may be doped using any of boron, gallium, phosphorus, arsenic, aluminum, and hafnium. Embodiments are suitable for applications in multiple patterning applications.
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: April 21, 2020
    Assignee: Lam Research Corporation
    Inventors: Shankar Swaminathan, Richard Phillips, Adrien LaVoie
  • Patent number: 10608011
    Abstract: A method addresses low cost, low resistance metal interconnects and mechanical stability in a high aspect ratio structure. According to the various implementations disclosed herein, a replacement metal process, which defers the need for a metal etching step in the fabrication process until after all patterned photoresist is no longer present. Under this process, the conductive sublayers may be both thick and numerous. The present invention also provides for a strut structure which facilitates etching steps on high aspect ratio structures, which enhances mechanical stability in a high aspect ratio memory stack.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: March 31, 2020
    Assignee: SUNRISE MEMORY CORPORATION
    Inventors: Eli Harari, Scott Brad Herner, Wu-Yi Chien
  • Patent number: 10580863
    Abstract: In sophisticated semiconductor devices, the lateral electric field in fully depleted transistor elements operated at elevated supply voltages may be significantly reduced by establishing a laterally graded dopant profile at edge regions of the respective channel regions. In some illustrative embodiments to this end, one or more dopant species may be incorporated prior to completing the gate electrode structure.
    Type: Grant
    Filed: October 10, 2017
    Date of Patent: March 3, 2020
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Damien Angot, Alban Zaka, Tom Herrmann, Venkata Naga Ranjith Kuma Nelluri, Jan Hoentschel, Lars Mueller-Meskamp, Martin Gerhardt
  • Patent number: 10573749
    Abstract: A fin-type field effect transistor comprising a substrate, at least one gate structure, first spacers, second spacers and source and drain regions is described. The substrate has fins and insulators disposed between the fins. The at least one gate structure is disposed over the fins and disposed on the insulators. The first spacers are disposed on opposite sidewalls of the at least one gate structure. The source and drain regions are disposed on two opposite sides of the at least one gate structure and beside the first spacers. The second spacers are disposed on the two opposite sides of the at least one gate structure and beside the first spacers. The source and drain regions are sandwiched between the opposite second spacers.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: February 25, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun Hsiung Tsai, Ziwei Fang, Shiu-Ko JangJian, Kei-Wei Chen, Huai-Tei Yang, Ying-Lang Wang
  • Patent number: 10541323
    Abstract: High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, gate-connected field plate, and source-connected field plate.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: January 21, 2020
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: Timothy E. Boles, Douglas Carlson, Anthony Kaleta
  • Patent number: 10535758
    Abstract: In some embodiments, a field effect transistor structure includes a first semiconductor structure and a gate structure. The first semiconductor structure includes a channel region, and a source region and a drain region. The source region and the drain region are formed on opposite ends of the channel region, respectively. The gate structure includes a central region and footing regions. The central region is formed over the first semiconductor structure. The footing regions are formed on opposite sides of the central region and along where the central region is adjacent to the first semiconductor structure.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: January 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Che-Cheng Chang, Chang-Yin Chen, Jr-Jung Lin, Chih-Han Lin, Yung Jung Chang
  • Patent number: 10535512
    Abstract: A structure and a formation method of a semiconductor device structure are provided. The method includes forming a gate stack over a semiconductor substrate. The method also includes forming a sealing layer over a sidewall of the gate stack using an atomic layer deposition process. The atomic layer deposition process includes alternately and sequentially introducing a first silicon-containing precursor gas and a second silicon-containing precursor gas over the sidewall of the gate stack to form the sealing layer. The second silicon-containing precursor gas has a different atomic concentration of carbon than that of the first silicon-containing precursor gas. The method further includes partially removing the sealing layer to form a sealing element over the sidewall of the gate stack.
    Type: Grant
    Filed: October 11, 2018
    Date of Patent: January 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Guan-Yao Tu, Yu-Yun Peng
  • Patent number: 10515955
    Abstract: Example embodiments relating to forming gate structures, e.g., for Fin Field Effect Transistors (FinFETs), are described. In an embodiment, a structure includes first and second device regions comprising first and second FinFETs, respectively, on a substrate. A distance between neighboring gate structures of the first FinFETs is less than a distance between neighboring gate structures of the second FinFETs. A gate structure of at least one of the first FinFETs has a first and second width at a level of and below, respectively, a top surface of a first fin. The first width is greater than the second width. A second gate structure of at least one of the second FinFETs has a third and fourth width at a level of and below, respectively a top surface of a second fin. A difference between the first and second widths is greater than a difference between the third and fourth widths.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: December 24, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Han Lin, Kuei-Yu Kao, Shih-Yao Lin, Ming-Ching Chang, Chao-Cheng Chen, Syun-Ming Jang
  • Patent number: 10510542
    Abstract: A device includes a semiconductor substrate, and a Device Isolation (DI) region extending from a top surface of the semiconductor substrate into the semiconductor substrate. A gate dielectric is disposed over an active region of the semiconductor substrate, wherein the gate dielectric extends over the DI region. A gate electrode is disposed over the gate dielectric, wherein a notch of the gate electrode overlaps a portion of the DI region.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Min-Feng Kao, Szu-Ying Chen, Dun-Nian Yaung, Jen-Cheng Liu, Tzu-Hsuan Hsu, Feng-Chi Hung
  • Patent number: 10497806
    Abstract: The present invention provides a MOS (Metal-Oxide-Silicon) device and a manufacturing method thereof. The MOS device includes: a semiconductor substrate, a gate, a source, a drain, and two LDDs (Lightly-Doped-Drains). At least one recess is formed at an upper surface of the semiconductor substrate. The recess has a depth which is deeper than the depth of the two LDDs. The recess is filled with a conductive material. A vertical connection portion is formed at a boundary of the recess in the vertical direction, to at least connect one of the LDDs to the drain. The LDD closer to the drain is not laterally in contact with the drain but is connected to the drain by the vertical direction.
    Type: Grant
    Filed: October 11, 2018
    Date of Patent: December 3, 2019
    Assignee: RICHTEK TECHNOLOGY CORPORATION
    Inventor: Tsung-Yi Huang
  • Patent number: 10490651
    Abstract: A method for fabricating a semiconductor structure is disclosed. The method includes providing a substrate and forming a plurality of fin structures on the substrate. Each fin structure includes a first side and a second side opposite to the first side. The method further includes forming a first doped region containing first doping ions in a portion of the substrate on the first side of each gate structure, and forming a second doped region containing second doping ions in a portion of the substrate on the second side of each gate structure. The ion concentration of the second doping ions in the second doped region is smaller than the ion concentration of the first doping ions in the first doped region, and the atomic weight of the second doping ions is smaller than the atomic weight of the first doping ions.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: November 26, 2019
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Chao Zhang, Ru Ling Zhou, Qing Yong Zhang
  • Patent number: 10490459
    Abstract: A method includes providing a structure that includes a substrate; first and second gate structures over the substrate; first and second source/drain (S/D) features over the substrate; a first dielectric layer over sidewalls of the first and second gate structures and the first and second S/D features; and a second dielectric layer over the first dielectric layer. The first and second S/D features are adjacent to the first and second gate structures respectively. The first and second S/D features comprise different materials. The method further includes etching the first and second dielectric layers to expose the first and second S/D features; doping a p-type dopant to the first and second S/D features; and performing a selective etching process to the first and second S/D features after the doping of the p-type dopant. The selective etching process recesses the first S/D feature faster than it recesses the second S/D feature.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: November 26, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shao-Ming Koh, Chen-Ming Lee, I-Wen Wu, Fu-Kai Yang, Jia-Heng Wang, Mei-Yun Wang
  • Patent number: 10468517
    Abstract: A method for fabricating a tunnel field effect transistor (TFET) includes the steps of providing a substrate and then forming an interfacial layer on the substrate. Preferably, the step of forming the interfacial layer includes the steps of: performing a plasma treatment process to inject a first gas containing nitrogen; injecting a second gas containing oxygen; and injecting a precursor to react with the first gas and the second gas for forming the interfacial layer.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: November 5, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: An-Chi Liu, Chun-Hsien Lin
  • Patent number: 10396156
    Abstract: A method includes providing a structure having a substrate, a fin, and a gate structure; performing an implantation process to implant a dopant into the fin adjacent to the gate structure; and forming gate sidewall spacers and fin sidewall spacers. The method further includes performing a first etching process to recess the fin adjacent to the gate sidewall spacers while keeping at least a portion of the fin above the fin sidewall spacers. The method further includes performing another implantation process to implant the dopant into the fin and the fin sidewall spacers; and performing a second etching process to recess the fin adjacent to the gate sidewall spacers until a top surface of the fin is below a top surface of the fin sidewall spacers, resulting in a trench between the fin sidewall spacers. The method further includes epitaxially growing a semiconductor material in the trench.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: August 27, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun Hsiung Tsai, Ya-Yun Cheng, Shahaji B. More, Cheng-Yi Peng, Wei-Yang Lee, Kuo-Feng Yu, Yen-Ming Chen, Jian-Hao Chen
  • Patent number: 10388731
    Abstract: A method of making a nanowire device includes disposing a first nanowire stack over a substrate, the first nanowire stack including alternating layers of a first and second semiconducting material, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; disposing a second nanowire stack over the substrate, the second nanowire stack including alternating layers of the first and second semiconducting materials, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; forming a first gate spacer along a sidewall of a first gate region on the first nanowire stack and a second gate spacer along a sidewall of a second gate region on the second nanowire stack; oxidizing a portion of the first nanowire stack within the first gate spacer; and removing the first semiconducting material from the first nanowire stack and the second nanowire stack.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: August 20, 2019
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES, INC.
    Inventors: Kangguo Cheng, Xin Miao, Ruilong Xie, Tenko Yamashita
  • Patent number: 10381457
    Abstract: Various methods and devices that involve body contacted transistors are disclosed. An exemplary method comprises forming a gate on a planar surface of a semiconductor wafer. The gate covers a channel of a first conductivity type that is opposite to a second conductivity type. The method also comprises implanting a body dose of dopants on a source side of the gate using the gate to mask the body dose of dopants. The body dose of dopants spreads underneath the channel to form a deep well. The body dose of dopants has the first conductivity type. The method also comprises implanting, subsequent to implanting the body dose of dopants, a source dose of dopants on the source side of the gate to form a source. The method also comprises forming a source contact that is in contact with the deep well at the planar surface of the semiconductor wafer.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: August 13, 2019
    Assignee: Silanna Asia Pte Ltd
    Inventor: George Imthurn
  • Patent number: 10381408
    Abstract: The present disclosure generally relates to the fabrication of metal-oxide-semiconductor (MOS) select transistors in a vertical orientation such that the transistor pair fits within the footprint of a 4F2 memory cell. The present disclosure further relates to the simultaneous fabrication of a vertical stack of transistors in which each transistor is distinct, as opposed to being serially connected in a NAND-like string. An initial stack of materials is built to include silicon layers to act as source and drain regions as well as to serve as epitaxial growth seed points. As such, the transistor disclosed may be utilized in conjunction with memory elements such as Phase Change, Resistive, or Magnetic RAM memory within array designs, among others.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: August 13, 2019
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Mac D. Apodaca, Daniel Robert Shepard
  • Patent number: 10374039
    Abstract: A resistive random access memory stack is formed on a surface of a faceted drain-side structure that is present on one side of a functional gate structure. The functional gate structure and the faceted drain-side structure are located on a topmost surface of a fully depleted semiconductor channel material layer. In some embodiments, the resistive random access memory stack includes a bottom electrode, a resistive switching layer and a top electrode. In other embodiments, the resistive random access memory stack includes a resistive switching layer and a top electrode. In such an embodiment, a drain-side metal semiconductor alloy of the faceted drain-side structure is used as the bottom electrode of the resistive random access memory device.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: August 6, 2019
    Assignee: International Business Machines Corporation
    Inventors: Pouya Hashemi, Takashi Ando, Alexander Reznicek
  • Patent number: 10355077
    Abstract: In an ESD protection element configured to protect a semiconductor device, a first N-type low concentration diffusion layer is formed, as an offset layer for easing electric field concentration, under a LOCOS oxide film formed at each end of the gate electrode, and a second N-type low concentration diffusion layer and a third low concentration diffusion layer are formed under an N-type high concentration diffusion layer on the drain side to set the point of breakdown at a level deep inside a substrate from a surface of the substrate. The hold voltage is thus raised to a voltage equal to or higher than the operating voltage and a noise can be relieved without increasing the element size of the ESD protection element even when the noise having a large amount of positive electric charge is applied to a Vdd supply terminal.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: July 16, 2019
    Assignee: ABLIC INC.
    Inventor: Yukimasa Minami
  • Patent number: 10347739
    Abstract: The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a contact silicide on a source-drain (S-D) region of a field effect transistor (FET) having extensions by using an undercut etch and a salicide process. A method of forming a contact silicide extension is disclosed. The method may include: forming an undercut region below a dielectric layer and above a source-drain region, the undercut region located directly below a bottom of a contact trench and extending below the dielectric layer to a gate spacer formed on a sidewall of a gate stack; and forming a contact silicide in the undercut region, the contact silicide in direct contact with the source-drain region.
    Type: Grant
    Filed: June 9, 2017
    Date of Patent: July 9, 2019
    Assignee: International Business Machines Corporation
    Inventors: Effendi Leobandung, Soon-Cheon Seo, Tenko Yamashita, Chun-Chen Yeh
  • Patent number: 10312379
    Abstract: A high voltage device includes a semiconductor substrate, an ion well, a Schottky diode in the ion well, an isolation structure in the ion well surrounding the Schottky diode, and an assistant gate surrounding the Schottky diode. The assistant gate is disposed only on the isolation structure and is not in direct contact with the ion well.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: June 4, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shih-Yin Hsiao, Kai-Kuen Chang, Ching-Chung Yang
  • Patent number: 10304963
    Abstract: The embodiments of the present disclosure provide a polysilicon thin film transistor and manufacturing method thereof, an array substrate, and a display panel. The method for manufacturing a polysilicon thin film transistor comprises: forming, on a substrate, a gate, a source and a drain, and an active layer. Forming the active layer comprises: forming a polysilicon layer on the substrate, which comprises a channel region and extension regions; performing ion injection process in the extension regions to form lightly-doped regions close to the channel region and a source region and a drain region; prior to or following the formation of the lightly-doped regions, employing halo ion injection process to form halo regions at the positions of the channel region which are close to the lightly-doped regions.
    Type: Grant
    Filed: March 29, 2016
    Date of Patent: May 28, 2019
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Xiaoyong Lu, Dong Li, Zheng Liu, Shuai Zhang, Liang Sun, Chunping Long
  • Patent number: 10304960
    Abstract: An integrated circuit device includes a first wiring, a second wiring, a semiconductor member that is connected between the first and second wirings, an electrode, and an insulating film that is provided between the semiconductor member and the electrode. The semiconductor member includes a first semiconductor portion of a first conductivity type connected to the first wiring, a second semiconductor portion of the first conductivity type, a third semiconductor portion of the first conductivity type, a fourth semiconductor portion of the first conductivity type, a fifth semiconductor portion of a second conductivity type, and a sixth semiconductor portion of the first conductivity type in this order. A first edge of the electrode on a side of the first wiring overlaps the second, third, or fourth semiconductor portions.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: May 28, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventor: Masakazu Goto
  • Patent number: 10290718
    Abstract: A metal-oxide semiconductor transistor includes a substrate, a gate insulating layer disposed on a surface of the substrate, and a metal gate disposed on the gate insulating layer, wherein at least one of the length or the width of the metal gate is greater than or equal to approximately 320 nanometers, and the metal gate has at least one plug hole. The metal-oxide semiconductor transistor further includes at least one insulating plug disposed in the plug hole and two diffusion regions disposed respectively at two sides of the metal gate in the substrate.
    Type: Grant
    Filed: August 3, 2017
    Date of Patent: May 14, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shih-Yin Hsiao, Ching-Chung Yang, Wen-Fang Lee, Nien-Chung Li, Chih-Chung Wang
  • Patent number: 10276569
    Abstract: The present invention relates generally to semiconductors, and more particularly, to a structure and method of minimizing shorting between epitaxial regions in small pitch fin field effect transistors (FinFETs). In an embodiment, a dielectric region may be formed in a middle portion of a gate structure. The gate structure be formed using a gate replacement process, and may cover a middle portion of a first fin group, a middle portion of a second fin group and an intermediate region of the substrate between the first fin group and the second fin group. The dielectric region may be surrounded by the gate structure in the intermediate region. The gate structure and the dielectric region may physically separate epitaxial regions formed on the first fin group and the second fin group from one another.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: April 30, 2019
    Assignee: International Business Machines Corporation
    Inventors: Kangguo Cheng, Balasubramanian Pranatharthiharan, Alexander Reznicek, Charan V. Surisetty
  • Patent number: 10204931
    Abstract: The present disclosure provides an electrically conductive structure and a manufacturing method thereof, an array substrate, and a display device. The manufacturing method of the electrically conductive structure including: forming stacked layers of electrically conductive films on a substrate; performing patterning process to the layers of electrically conductive films to form an electrically conductive structure with a preset pattern, an edge of the electrically conductive structure being a step-shaped structure.
    Type: Grant
    Filed: September 23, 2015
    Date of Patent: February 12, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Na Zhao
  • Patent number: 10199459
    Abstract: A semiconductor device has a substrate and a lightly doped drain (LDD) region formed in the substrate. A superjunction is formed in the LDD region.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: February 5, 2019
    Assignee: Great Wall Semiconductor Corporation
    Inventors: Patrick M. Shea, Samuel J. Anderson, David N. Okada
  • Patent number: 10181522
    Abstract: Structures for a field-effect transistor and fabrication methods for forming a structure for a field-effect transistor. The structure may include a gate electrode, a source/drain region formed adjacent to a vertical sidewall of the gate electrode, and a conductive link that couples the vertical sidewall of the gate electrode with the source/drain region.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: January 15, 2019
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Tuhin Guha Neogi, Scott D. Luning, David Pritchard, Kasun Anupama Punchihewa
  • Patent number: 10176990
    Abstract: A semiconductor device and a method for fabricating the device. The method includes: providing a FinFET having a source/drain region, at least one SiGe fin, a silicon substrate, a local oxide layer is formed on the silicon substrate, a gate structure is formed on the at least one SiGe fin and the local oxide layer, the gate structure is encapsulated by a gate hard mask and sidewall spacer layers; recessing the at least one SiGe fin in the source/drain region to the sidewall spacer layers and the silicon substrate layer; recessing the local oxide layer in the source/drain region to the sidewall spacer layer and the silicon substrate; growing a n-doped silicon layer on the silicon substrate; growing a p-doped silicon layer or p-doped SiGe layer on the n-doped silicon layer; and forming a silicide layer on the p-doped silicon layer or p-doped SiGe layer.
    Type: Grant
    Filed: August 19, 2016
    Date of Patent: January 8, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek
  • Patent number: 10157743
    Abstract: A method of forming patterns includes the steps of providing a substrate on which a target layer and a hard mask layer are formed; forming a plurality of first resist patterns on the hard mask layer; performing a tilt-angle ion implant process to form a first doped area and a second doped area in the hard mask layer between adjacent first resist patterns; removing the first resist patterns; coating a directed self-assembly (DSA) material layer onto the hard mask layer; performing a self-assembling process of the DSA material layer to form repeatedly arranged block copolymer patterns in the DSA material layer; removing undesired portions from the DSA material layer to form second patterns on the hard mask layer; transferring the second patterns to the hard mask layer to form third patterns; and etching the target layer through the third patterns.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: December 18, 2018
    Assignee: Micron Technology, Inc.
    Inventor: Kuo-Yao Chou
  • Patent number: 10147817
    Abstract: Techniques are disclosed for improved integration of germanium (Ge)-rich p-MOS source/drain contacts to, for example, reduce contact resistance. The techniques include depositing the p-type Ge-rich layer directly on a silicon (Si) surface in the contact trench location, because Si surfaces are favorable for deposition of high quality conductive Ge-rich materials. In one example method, the Ge-rich layer is deposited on a surface of the Si substrate in the source/drain contact trench locations, after removing a sacrificial silicon germanium (SiGe) layer previously deposited in the source/drain locations. In another example method, the Ge-rich layer is deposited on a Si cladding layer in the contact trench locations, where the Si cladding layer is deposited on a functional p-type SiGe layer. In some cases, the Ge-rich layer comprises at least 50% Ge (and may contain tin (Sn) and/or Si) and is boron (B) doped at levels above 1E20 cm?3.
    Type: Grant
    Filed: January 2, 2018
    Date of Patent: December 4, 2018
    Assignee: INTEL CORPORATION
    Inventors: Glenn A. Glass, Anand S. Murthy, Tahir Ghani, Ying Pang, Nabil G. Mistkawi
  • Patent number: 10147787
    Abstract: A semiconductor structure includes a semiconductor substrate, at least one source drain structure, an insulating layer, and a gate. The semiconductor substrate includes a base portion and at least one fin. The fin is disposed on the base portion. The source drain structure is disposed on at least one sidewall of the fin. The insulating layer is disposed between the base portion and the source drain structure to isolate the base portion and the source drain structure. The gate is disposed on the fin.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: December 4, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventor: Tai-Yuan Wang
  • Patent number: 10128373
    Abstract: The present invention provides a MOS (Metal-Oxide-Silicon) device and a manufacturing method thereof. The MOS device includes: a semiconductor substrate, a gate, a source, a drain, and two LDDs (Lightly-Doped-Drains). At least one recess is formed at an upper surface of the semiconductor substrate. The recess has a depth which is deeper than the depth of the two LDDs. The recess is filled with a conductive material. A vertical connection portion is formed at a boundary of the recess in the vertical direction, to at least connect one of the LDDs to the drain. The LDD closer to the drain is not laterally in contact with the drain but is connected to the drain by the vertical direction.
    Type: Grant
    Filed: May 3, 2017
    Date of Patent: November 13, 2018
    Assignee: RICHTEK TECHNOLOGY CORPORATION
    Inventor: Tsung-Yi Huang
  • Patent number: 10121897
    Abstract: A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: November 6, 2018
    Assignee: Intel Corporation
    Inventors: Robert S. Chau, Suman Datta, Jack Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew Metz
  • Patent number: 10079302
    Abstract: A method for forming a semiconductor structure includes forming at least one fin on a semiconductor substrate. The least one fin includes a semiconducting material. A gate is formed over and in contact with the at least one fin. A germanium comprising layer is formed over and in contact with the at least one fin. Germanium from the germanium comprising layer is diffused into the semiconducting material of the at least one fin.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: September 18, 2018
    Assignee: International Business Machines Corporation
    Inventors: Kangguo Cheng, Juntao Li, Xin Miao
  • Patent number: 10062757
    Abstract: A semiconductor device includes: a semiconductor body including an active region that houses an electronic component and a passive dielectric region surrounding the active region; a conductive buried region, of metallic material or metallic alloy, which extends in the semiconductor body in the active region; and one or more electrical contacts, of metallic material, which extend between the conductive buried region and a top surface of the semiconductor body, and form respective paths for electrical access to the conductive buried region.
    Type: Grant
    Filed: August 29, 2016
    Date of Patent: August 28, 2018
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Fabrizio Fausto Renzo Toia, Claudio Contiero, Elisabetta Pizzi, Simone Dario Mariani
  • Patent number: 10050118
    Abstract: In one aspect a semiconductor device as set forth herein can include a spacer having a first section of a first material and a second section of a second material, the second section disposed above a certain elevation and the first section disposed below the certain elevation. In one aspect a semiconductor device as set forth herein can include a conductive gate structure having a first length at elevations below a certain elevation and a second length at elevations above the certain elevation, the second length being less than the first length. A semiconductor device having one or more of a plural material spacer or a reduced length upper elevation conductive gate structure can feature a reduced likelihood of electrical shorting.
    Type: Grant
    Filed: May 5, 2014
    Date of Patent: August 14, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ruilong Xie, Ryan Ryoung-han Kim, Chanro Park, William James Taylor, Jr., John A. Iacoponi
  • Patent number: 10038010
    Abstract: A semiconductor device may include: a substrate; a first well region formed on the substrate; a second well region formed on the substrate, the first well region and the second well region extending in a first direction and being adjacent to each other in a second direction crossing the first direction; a first active region formed in the first well region; a first power region formed in the first well region, the first active region and the first power region being separate from each other in the first direction; a second active region array formed in the second well region; a second power region formed in the second well region, the second active region array and the second power region being separate from each other in the first direction; and a first dummy active region formed in the first well region between the first active region and the first power region, the first dummy active region being separate from the first active region and the first power region in the first direction.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: July 31, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Yong-hoon Kim
  • Patent number: 10032524
    Abstract: Techniques are presented for the determination defects in non-volatile arrays, particularly those having a 3D or BiCS type of arrangement where NAND strings run in a vertical direction relative to the substrate. In such an arrangement, the NAND strings are formed along memory holes and connected to global bit lines, and are separated into blocks or sub-blocks by vertical local interconnects, such as for source lines, and connected to a corresponding global line. To determine defective blocks, a reference current is determined based on the amount of current drawn by the local interconnects when a high voltage is applied and all of the blocks are de-selected. The amount of leakage current is determined when a selected block is biased to ground and the high voltage is applied to the interconnects. By comparing the reference current to the leakage current, a determination can be made on whether the selected block has defects related to the local interconnect structure.
    Type: Grant
    Filed: May 14, 2015
    Date of Patent: July 24, 2018
    Assignee: SanDisk Technologies LLC
    Inventors: Jagdish Sabde, Sagar Magia, Jayavel Pachamuthu
  • Patent number: 10026658
    Abstract: Systems and methods are provided for fabricating nanowire devices on a substrate. A first nanowire and a second nanowire are formed on a substrate, the first nanowire and the second nanowire extending substantially vertically relative to the substrate. A first source region and a first drain region are formed with n-type dopants, the first nanowire being disposed between the first source region and the first drain region. A second source region and a second drain region are formed with p-type dopants, the second nanowire being disposed between the second source region and the second drain region.
    Type: Grant
    Filed: April 14, 2014
    Date of Patent: July 17, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Teng-Chun Tsai, Cheng-Tung Lin, Li-Ting Wang, De-Fang Chen, Huan-Just Lin
  • Patent number: 10014411
    Abstract: An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage. A second silicon germanium region is overlying the first silicon germanium region, wherein the second silicon germanium region has a second germanium percentage higher than the first germanium percentage. A metal silicide region is over and in contact with the second silicon germanium region.
    Type: Grant
    Filed: May 11, 2016
    Date of Patent: July 3, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsz-Mei Kwok, Kun-Mu Li, Hsueh-Chang Sung, Chii-Horng Li, Tze-Liang Lee
  • Patent number: 9997601
    Abstract: A metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a source and a drain in the substrate, a gate electrode disposed over the substrate between the source and drain, and a gate dielectric layer disposed between the substrate and the gate electrode. At least a portion of the gate dielectric layer is extended beyond the gate electrode toward at least one of the source or the drain.
    Type: Grant
    Filed: November 18, 2015
    Date of Patent: June 12, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiuan-Jeng Lin, Shyh-Wei Cheng, Che-Jung Chu
  • Patent number: 9966467
    Abstract: An integrated circuit and a code generating method are described. The integrated circuit includes a plurality of field effect transistors, a plurality of sense-amplifiers, and a processing circuit. Each field effect transistor is configured to represent an address in a mapping table and includes a source, a drain, a channel and a gate. Each sense-amplifier is connected to the drain and configured to sense an electric current from the drain and identify a threshold voltage of the corresponding field effect transistor. The processing circuit is configured to categorize each of the threshold voltages identified by the corresponding sense-amplifiers into a first state and a second state and mark the state of each of the threshold voltages at the corresponding address in the mapping table.
    Type: Grant
    Filed: September 27, 2013
    Date of Patent: May 8, 2018
    Assignee: PHISON ELECTRONICS CORP.
    Inventor: Hiroshi Watanabe
  • Patent number: 9966430
    Abstract: A method of making a nanowire device includes disposing a first nanowire stack over a substrate, the first nanowire stack including alternating layers of a first and second semiconducting material, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; disposing a second nanowire stack over the substrate, the second nanowire stack including alternating layers of the first and second semiconducting materials, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; forming a first gate spacer along a sidewall of a first gate region on the first nanowire stack and a second gate spacer along a sidewall of a second gate region on the second nanowire stack; oxidizing a portion of the first nanowire stack within the first gate spacer; and removing the first semiconducting material from the first nanowire stack and the second nanowire stack.
    Type: Grant
    Filed: July 6, 2016
    Date of Patent: May 8, 2018
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES, INC.
    Inventors: Kangguo Cheng, Xin Miao, Ruilong Xie, Tenko Yamashita