Acoustic Wave Patents (Class 257/416)
  • Patent number: 10366192
    Abstract: Non-transitory computer-readable media to perform a method for designing a multiband filter. The method includes generating an initial circuit structure comprising a desired number and type of circuit elements; generating an initial circuit design by mapping the frequency response requirements of the initial circuit structure into normalized space; generating an acoustic filter circuit design by transferring the initial filter circuit design; generating a pre-optimized circuit design by unmapping one or more circuit elements of the acoustic filter circuit design into real space and introducing parasitic effects; and communicating the pre-optimized circuit design to a filter optimizer that generates a final circuit design comprising a plurality of resonators, wherein a first resonator exhibits a high resonant frequency, a second resonator demonstrates a low resonant frequency and the difference between the low resonant frequency and the high resonant frequency is at least 1.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: July 30, 2019
    Assignee: Resonant Inc.
    Inventors: Patrick J. Turner, Richard N. Silver, Balam Quitze Andres Willemsen Cortes, Kurt F. Raihn, Neal O. Fenzi, Robert B. Hammond
  • Patent number: 10351416
    Abstract: A model is specified in which a MEMS component is connected to the carrier in a stress-free fashion over a large temperature range. For this purpose, a mechanical connection comprises a compensation structure which bridges a horizontal offset of mounting points by means of a horizontal shoulder and the thermal expansion coefficient of which is suitably selected.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: July 16, 2019
    Assignee: TDK Corporation
    Inventor: Pirmin Hermann Otto Rombach
  • Patent number: 10315912
    Abstract: A microelectromechanical system (MEMS) includes a diaphragm with a first surface and a second surface. The first surface is exposed to an environmental pressure. The second surface comprises a plurality of fingers extending from the second surface. The MEMS also includes a backplate comprising a plurality of voids. Each of the plurality of fingers extends into a respective one of the plurality of voids. The MEMS further includes an insulator between a portion of the diaphragm and a portion of the backplate. The diaphragm is configured to move with respect to the backplate in response to changes in the environmental pressure.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: June 11, 2019
    Assignee: Knowles Electronics, LLC
    Inventors: Mohsin Nawaz, Michael Kuntzman, Michael Pedersen
  • Patent number: 10315403
    Abstract: A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: June 11, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Hideki Shimoi, Naoki Uchiyama, Daisuke Kawaguchi
  • Patent number: 10312882
    Abstract: In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: June 4, 2019
    Inventors: Cindy X. Qiu, Ishiang Shih, Chunong Qiu, Andy Shih, Julia Qiu, Yi-Chi Shih
  • Patent number: 10306369
    Abstract: The present disclosure provides a vibration diaphragm. The vibration diaphragm includes a vibration dome; a suspension part surrounding the dome; and a reinforced part assembled with the dome. The reinforced part includes n pieces of longitudinal bar parts, a first transverse bar part and a second transverse bar part connecting ends of adjacent n pieces of the longitudinal bars respectively, and a third transverse bar part connecting n?1 pieces of longitudinal bar parts and located between the first transverse bar part and the second transverse bar part, where, n is an integer more than or equal to 3. The configuration of the reinforced ribs increases the surface area of the dome, and increases the width of the vibration frequency band of the vibration diaphragm.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: May 28, 2019
    Assignee: AAC TECHNOLOGIES PTE. LTD.
    Inventors: Xiaojiang Gu, Meiwei Wu
  • Patent number: 10281646
    Abstract: An acousto-optic waveguide device comprises a substrate comprising a first material having a first refractive index and a first acoustic velocity; a cladding layer over the substrate, the cladding layer comprising a second material having a second refractive index that is distinct from the first refractive index, the second material having a second acoustic velocity that is distinct from the first acoustic velocity; and an optical core surrounded by the cladding layer, the optical core comprising a third material having a third refractive index that is higher that the first refractive index and the second refractive index, the third material having a third acoustic velocity that is distinct from the first acoustic velocity and the second acoustic velocity. The cladding layer that surrounds the optical core has a thickness configured to substantially confine acoustic waves to the cladding layer when an optical signal propagates through the optical core.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: May 7, 2019
    Assignee: Honeywell International Inc.
    Inventors: Matthew Wade Puckett, Jianfeng Wu, Mary Salit, Tiequn Qiu
  • Patent number: 10283427
    Abstract: Apparatus, and methods of manufacture thereof, in which a molding compound is formed between spaced apart microelectronic devices. The molding compound comprises micro-filler elements. No boundary of any of the micro-filler elements is substantially parallel to a substantially planar surface of the molding compound, or to a substantially planar surface of any of the microelectronic devices.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: May 7, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chen-Hua Yu, Chung-Shi Liu, Chih-Fan Huang, Chih-Wei Lin, Wei-Hung Lin, Ming-Da Cheng
  • Patent number: 10273150
    Abstract: The present invention discloses a manufacturing method of an integrated structure of a MEMS microphone and a pressure sensor, which comprises the following steps: depositing an insulating layer, a first polycrystalline silicon layer, a sacrificial layer and a second polycrystalline silicon layer in sequence on a shared substrate; etching the second polycrystalline silicon layer to form a vibrating diaphragm and an upper electrode; eroding the sacrificial layer to form a containing cavity of a microphone and a pressure sensor, and etching the sacrificial layer between the microphone and the pressure sensor; etching the first polycrystalline silicon layer to form a back electrode of the microphone and a lower electrode of the pressure sensor; etching a position of the shared substrate below a back electrode of the microphone to form a back cavity; and etching away the region of the insulating layer below the back electrode.
    Type: Grant
    Filed: December 14, 2015
    Date of Patent: April 30, 2019
    Assignee: Goertek.Inc
    Inventor: Yanmei Sun
  • Patent number: 10266401
    Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: April 23, 2019
    Assignee: Butterfly Network, Inc.
    Inventors: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez
  • Patent number: 10266394
    Abstract: A MEMS transducer package (300) comprises a package cover (313) comprising a first bonding region (316) and an integrated circuit die (319) comprising a second bonding region (314) for bonding with the first bonding region of the package cover. The integrated circuit die (309) comprises an integrated MEMS transducer (311) and integrated electronic circuitry (312) in electrical connection with the integrated MEMS transducer. The footprint of the integrated electronic circuitry (312) at least overlaps the bonding region (314) of the integrated circuit die (309).
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: April 23, 2019
    Assignee: Cirrus Logic, Inc.
    Inventor: Tsjerk Hans Hoekstra
  • Patent number: 10263601
    Abstract: A tunable BAW filter device operating in an allocated channel of a predetermined frequency band includes a voltage source and multiple BAW resonators. The voltage source selectively provides non-zero DC bias voltage based on a location of the allocated channel within the frequency band. Each BAW resonator has a resonance frequency, and includes a bottom electrode, a piezoelectric layer and a top electrode disposed over the piezoelectric layer, the top electrode being electrically connected to the voltage source via a resistor. The voltage source is activated, applying the non-zero DC bias voltage to the top electrode of each BAW resonator, when the location of the allocated channel is near an upper or lower corner of the frequency band. The resonance frequency of each BAW resonator is shifted in response to the non-zero DC bias voltage toward a center of the frequency band, improving insertion loss of the BAW filter device.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: April 16, 2019
    Assignee: Avago Technologies International Sales Pte. Limited
    Inventor: Paul Bradley
  • Patent number: 10205436
    Abstract: Embodiments of an acoustic wave filter system that includes at least one acoustic wave filter and acoustic wave tuning control circuitry are disclosed. The acoustic wave filter includes at least one acoustic wave resonator and defines a passband. To provide tuning for calibration or for dynamic filter operation, the acoustic wave tuning control circuitry is configured to bias one or more of the acoustic wave resonators with bias voltages. Biasing an acoustic wave resonator affects the resonances of the resonator, thereby allowing for the passband of the acoustic wave resonator to be tuned. Accordingly, the acoustic wave tuning control circuitry is configured to adjust the bias voltages so that the acoustic wave filter shifts the passband. In this manner, the passband of the acoustic wave filter can be tuned with high degree of accuracy and without requiring physical alterations to the acoustic wave resonators.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: February 12, 2019
    Assignee: Qorvo US, Inc.
    Inventors: Baker Scott, Robert Aigner, Gernot Fattinger, George Maxim, Dirk Robert Walter Leipold, Nadim Khlat
  • Patent number: 10196261
    Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: February 5, 2019
    Assignee: Butterfly Network, Inc.
    Inventors: Jonathan M. Rothberg, Susan A. Alie, Keith G. Fife, Nevada J. Sanchez, Tyler S. Ralston, Jaime Scott Zahorian
  • Patent number: 10194226
    Abstract: A device for detecting acoustic waves may include a housing having a housing wall with an inner surface, and an acoustic wave sensor provided at least partially inside the housing and configured to detect acoustic waves. The inner surface of the housing wall is made in at least half of its entire area of a thermally insulating material.
    Type: Grant
    Filed: May 5, 2017
    Date of Patent: January 29, 2019
    Assignee: Infineon Technologies AG
    Inventors: Alfons Dehe, David Tumpold, Gueclue Onaran
  • Patent number: 10190921
    Abstract: Provided is an internal temperature measurement device capable of measuring an internal temperature of a measuring object for which the thermal resistance value of a non-heating body present on the surface side of the object is unknown, more accurately with better responsiveness than hitherto. The internal temperature measurement device 10 includes a MEMS chip 12 including: two cells 20a, 20b for measuring two heat fluxes for calculating an internal temperature of a measuring object for which the thermal resistance value of a non-heating body is unknown; and a cell 20c for increasing a difference between the heat fluxes.
    Type: Grant
    Filed: October 19, 2015
    Date of Patent: January 29, 2019
    Assignee: OMRON Corporation
    Inventors: Shinya Nakagawa, Masao Shimizu, Tsuyoshi Hamaguchi
  • Patent number: 10171918
    Abstract: The disclosure describes various MEMS microphone modules that have a small footprint and can be integrated, for example, into consumer electronic or other devices in which space is at premium. Wafer-level fabrication techniques for making the modules also are described.
    Type: Grant
    Filed: October 19, 2017
    Date of Patent: January 1, 2019
    Assignee: Heptagon Micro Optics Pte. Ltd.
    Inventors: Jens Geiger, Markus Rossi, Hartmut Rudmann
  • Patent number: 10154328
    Abstract: A surface-mountable MEMS microphone comprising a MEMS microphone die and an application-specific integrated circuit (ASIC) mounted inside a surface-mountable package housing, and fully enclosed therein. The surface-mountable package is a single, self-contained housing that provides an electrical interface to external circuitry for the enclosed MEMS microphone die and the ASIC, and provides electrical, physical, and environmental protection for the MEMS microphone die and the ASIC. The surface-mountable package allows external acoustic energy to enter the package interior via one or more acoustic ports and impinge on the diaphragm of the MEMS microphone die. The cover of the surface-mountable package comprises an acoustic port with ingress protection to limit dust and particle intrusion. The ingress protection can be a formed member that is part of the cover of the surface-mountable package having various shapes, an internal shield, or a combination of both a formed member and internal shield.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: December 11, 2018
    Assignee: Knowles Electronics, LLC
    Inventors: Joshua Watson, Daniel Todd Grosse, Michael Robert Jacobs, William F. Schimpf, Ivelisse Del Valle Figueroa
  • Patent number: 10141906
    Abstract: A method of fabricating a resonator includes providing a first quartz substrate, forming a metallic etch stop on a first surface of the first quartz substrate; attaching, using a temporary adhesive, the first surface of the first quartz substrate to a second quartz substrate, etching an opening for a via in a second surface of the first quartz substrate to the metallic etch stop, forming a metal electrode on the second surface of the first quartz substrate, the metal electrode penetrating the via in the first quartz substrate to make ohmic contact with the metallic etch stop, bonding the metal electrode formed on the second surface of the first quartz substrate to a pad formed on a host substrate; and dissolving the temporary adhesive to release the second quartz substrate from the first quartz substrate, wherein the first quartz substrate and the host substrate each comprise crystalline quartz.
    Type: Grant
    Filed: May 6, 2016
    Date of Patent: November 27, 2018
    Assignee: HRL Laboratories, LLC
    Inventors: David T. Chang, Frederic P. Stratton, Hung Nguyen, Randall L. Kubena
  • Patent number: 10129651
    Abstract: A MEMS microphone having a backplate, a spring, and a membrane. In one embodiment, the membrane is supported in an approximate center of the membrane via a support. The support is connected to the approximate center of the membrane and an approximate center of the backplate. The membrane is connected to a spring that provides an electrical connection. The membrane may be electrically biased via the electrical connection. One or more overtravel stops are fixed to the backplate and pass through an aperture of the membrane. The overtravel stops are configured to prevent movement of the membrane in a radial direction opposite to the backplate. The membrane includes a stress gradient, a corrugation, or another structure that sets or determines a stiffness of the membrane.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: November 13, 2018
    Assignee: Robert Bosch GmbH
    Inventors: Yujie Zhang, Andrew J. Doller, Thomas Buck
  • Patent number: 10103098
    Abstract: Semiconductor devices including a through via structure and methods of forming the same are provided. The semiconductor devices may include a semiconductor substrate including a first surface and a second surface opposite the first surface, a front insulating layer on the first surface of the semiconductor substrate, a back insulating layer on the second surface of the semiconductor substrate, a through via structure extending through the back insulating layer, the semiconductor substrate, and the front insulating layer, a via insulating layer on a side surface of the through via structure, and a contact structure extending through the front insulating layer. The through via structure may include a first region and a second region disposed on the first region. The second region may include a first doping element, and the first region may be substantially free of the first doping element.
    Type: Grant
    Filed: January 11, 2017
    Date of Patent: October 16, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Deokyoung Jung, Kwangjin Moon, Byung Lyul Park, Jin Ho An
  • Patent number: 10097158
    Abstract: Acoustic wave device includes: a piezoelectric substrate; a first IDT located on the piezoelectric substrate; and a second IDT located on the piezoelectric substrate and connected in series to the first IDT, wherein the first IDT and the second IDT share a single common bus bar as a first bus bar of two bus bars of the first IDT and a first bus bar of two bus bars of the second IDT, and the common bus bar has a width not more than two times a wavelength of an acoustic wave propagating through the first and second IDTs, the common bus bar connects to no dummy electrode finger facing a tip of an electrode finger connected to a second bus bar of the two bus bars of the first IDT and the second IDT across a gap.
    Type: Grant
    Filed: September 22, 2015
    Date of Patent: October 9, 2018
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Yasufumi Kaneda, Takuma Kuroyanagi, Hitoshi Tsukidate, Osamu Ikata, Kaoru Sakinada, Michio Miura, Tooru Takezaki
  • Patent number: 10087071
    Abstract: A semiconductor structure includes a first substrate, a second substrate disposed over the first substrate, and including a first surface, a second surface opposite to the first surface, a via portion extending between the first surface and the second surface, a first through hole and a second through hole, and a device disposed over the second surface, and including a dielectric layer, a backplate at least partially exposed from the dielectric layer and a membrane at least partially exposed from the dielectric layer and disposed between the backplate and the first substrate, wherein the via portion is disposed within the second through hole, and the dielectric layer is bonded with the second substrate, and the device is electrically connected to the first substrate through the via portion.
    Type: Grant
    Filed: October 25, 2016
    Date of Patent: October 2, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tzu-Heng Wu, Chia-Hua Chu, Yi-Heng Tsai, Cheng San Chou, Chen Hsiung Yang
  • Patent number: 10068820
    Abstract: The present disclosure relates to an electronic element package and a method of manufacturing the same. The electronic element package includes a substrate, an element disposed on the substrate, and a cap enclosing the element. One of the substrate and the cap includes a groove, the other of the substrate and the cap includes a protrusion engaging with the groove. A first metal layer and a second metal layer form a metallic bond with each other in a space between the groove and the protrusion.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: September 4, 2018
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Pil Joong Kang, Kwang Su Kim, Ji Hye Nam, Jeong Il Lee, Jong Hyeong Song, Yun Sung Kang, Seung Joo Shin, Nam Jung Lee
  • Patent number: 10062830
    Abstract: An elastic wave resonator includes an interdigital transducer electrode provided on a piezoelectric substrate and including a first electrode layer made of Al or an alloy with Al as its primary component and including a first main surface on a side where the piezoelectric substrate is located and a second main surface on the opposite side from the first main surface. An SH wave is used as a propagated elastic wave. When a resonant frequency of the elastic wave resonator is fr and an anti-resonant frequency of the elastic wave resonator is fa, a minimum value of an absolute value of a distortion component in the first main surface calculated through a two-dimensional finite element method is about 1.4×10?3 or less at a frequency f expressed as: f=fr+0.06×bw, where bw is fa?fr.
    Type: Grant
    Filed: May 4, 2017
    Date of Patent: August 28, 2018
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Ryo Nakagawa
  • Patent number: 10046367
    Abstract: Systems, methods and computer readable media for material separation and conveying using tuned waves are disclosed.
    Type: Grant
    Filed: September 12, 2016
    Date of Patent: August 14, 2018
    Inventors: Spencer Allen Miller, Reza Khoshnoodi
  • Patent number: 10035702
    Abstract: A method and system for preparing a semiconductor wafer are disclosed. In a first aspect, the method comprises providing a passivation layer over a patterned top metal on the semiconductor wafer, etching the passivation layer to open a bond pad in the semiconductor wafer using a first mask, depositing a protection layer on the semiconductor wafer, patterning the protective layer using a second mask, and etching the passivation layer to open other electrodes in the semiconductor wafer using a third mask. The system comprises a MEMS device that further comprises a first substrate and a second substrate bonded to the first substrate, wherein the second substrate is prepared by the aforementioned steps of the method.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: July 31, 2018
    Assignee: INVENSENSE, INC.
    Inventor: Daesung Lee
  • Patent number: 10003874
    Abstract: A microphone package structure includes a substrate, sound wave transducer, processing chip, lid, sound aperture, at least one first solder pad and at least one second solder pad. The substrate has a top side, a bottom side and two opposing lateral sides. The top and bottom sides each connect the lateral sides. The sound wave transducer and processing chip are disposed on the top side. The lid covers the substrate to form a chamber for containing the sound wave transducer and the processing chip electrically connected to the substrate and sound wave transducer. The sound aperture is disposed at the substrate or lid. The at least one first solder pad is disposed on the bottom side and in electrical conduction with the processing chip. The at least one second solder pad is disposed on one of the lateral sides and in electrical conduction with the processing chip.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: June 19, 2018
    Assignee: LINGSEN PRECISION INDUSTRIES, LTD.
    Inventors: Yao-Ting Yeh, Ming-Te Tu
  • Patent number: 10003890
    Abstract: A MEMS microphone includes a substrate (100), a supporting part (200), an upper polar plate (300) and a lower polar plate (400). The substrate (100) is provided with an opening (120) penetrating the middle thereof; the lower polar plate (400) straddles the opening (120); the supporting part (200) is fixed on the lower polar plate (400); the upper polar plate (300) is affixed to the supporting part (200); an accommodating cavity (500) is formed among the supporting part (200), the upper polar plate (300) and the lower polar plate (400); a recess (600) opposite to the accommodating cavity (500) is arranged in an intermediate region of at least one of the upper polar plate (300) and the lower polar plate (400), and insulation is achieved between the upper polar plate (300) and a lower polar plate (400).
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: June 19, 2018
    Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.
    Inventor: Yonggang Hu
  • Patent number: 9964635
    Abstract: Both controlling damage when assembling an ultrasonic probe using a chip formed with a capacitive ultrasonic transducer and securing operational reliability are achieved. In a semiconductor substrate on which the capacitive ultrasonic transducer (CMUT) is formed on a first primary surface, a protective film is formed on the surface of the ultrasonic transducer which is formed on the first primary surface of the semiconductor substrate which is then thinned by polishing a second primary surface opposite to the first primary surface of the semiconductor substrate, an ultrasonic transducer chip is cutout of the semiconductor substrate, a sound absorbing material is provided on the surface opposite to the surface formed with the ultrasonic transducer, and the protective film formed on the surface of the ultrasonic transducer is removed.
    Type: Grant
    Filed: November 29, 2013
    Date of Patent: May 8, 2018
    Assignee: HITACHI, LTD.
    Inventors: Shuntaro Machida, Akifumi Sako, Taiichi Takezaki, Yasuhiro Yoshimura, Tatsuya Nagata, Naoaki Yamashita, Hiroki Tanaka
  • Patent number: 9961452
    Abstract: In one embodiment a micro-electro-mechanical system (MEMS) microphone package includes a multiple layer substrate, an upper acoustic port formed through a plurality of upper layers of the multiple layer substrate and exposing an upper surface of a membrane portion, a lower acoustic port formed through a plurality of lower layers of the multiple layer substrate and exposing a lower surface of the membrane portion, a ring trench formed through at least one of the plurality of upper layers and exposing a metal ring, a MEMS die located above the ring trench, a copper pillar ring extending between the metal ring and the MEMS die, and a solder pillar ring positioned on a first surface of the copper pillar ring, the copper pillar ring and solder pillar ring attaching the MEMS die to the metal ring.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: May 1, 2018
    Assignees: Akustica, Inc., Robert Bosch GmbH
    Inventor: Jay S. Salmon
  • Patent number: 9957155
    Abstract: A capacitive micromachined ultrasonic transducer and a method of fabricating the same are provided. The capacitive micromachined ultrasonic transducer includes a device substrate including a first trench defining a plurality of first portions corresponding to an element and a second trench spaced apart from the first trench; a supporting unit provided on the device substrate, the supporting unit defining a plurality of cavities; a membrane provided on the supporting unit to cover the plurality of cavities; a top electrode electrically connected to a second portion in the second trench through a via hole penetrating through the membrane and the supporting unit; and a through silicon via (TSV) substrate provided on a bottom surface of the device substrate, the TSV substrate including a first via metal connected to the plurality of first portions corresponding to the element and a second via metal connected to the second portion.
    Type: Grant
    Filed: May 23, 2014
    Date of Patent: May 1, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-sik Shim, Seog-woo Hong, Seok-whan Chung, Chang-jung Kim
  • Patent number: 9955268
    Abstract: A micro-electrical-mechanical system (MEMS) microphone includes a MEMS structure, having a substrate, a diaphragm, and a backplate, wherein the substrate has a cavity and the backplate is between the cavity and the diaphragm. The backplate has multiple venting holes, which are connected to the cavity and allows the cavity to extend to the diaphragm. Further, an adhesive layer is disposed on the substrate, surrounding the cavity. A cover plate is adhered on the adhesive layer, wherein the cover plate has an acoustic hole, dislocated from the cavity without direct connection.
    Type: Grant
    Filed: July 11, 2014
    Date of Patent: April 24, 2018
    Assignee: Solid State System Co., Ltd.
    Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Cheng-Wei Tsai, Jhyy-Cheng Liou
  • Patent number: 9943881
    Abstract: An ultrasound transducer includes an electric vibrator including a vibrator contact layer, to transmit and receive ultrasound wave, and a circuit-board including a circuit contact layer connected to the vibrator contact layer, to transmit and receive ultrasound signals via the vibrator contact layer. A maximum width which width is an extent of a shorter side of the circuit contact layer, is same to a width of the electric vibrator. The circuit contact layer includes a bonding area that extends to a surface of a circuit-board and a surface of the vibrator contact layer. An adhesive is provided in the bonding area to adhere the electric vibrator and the circuit-board to each other.
    Type: Grant
    Filed: February 10, 2015
    Date of Patent: April 17, 2018
    Assignee: Toshiba Medical Systems Corporation
    Inventors: Kengo Okada, Minoru Aoki, Hiroyuki Shikata, Takashi Kubota, Yasuhiro Ona
  • Patent number: 9936306
    Abstract: The invention discloses a MEMS microphone, which includes a case with an accommodating cavity and an acoustic vent arranged on the case, a housing with an empty cavity as well as MEMS and ASIC chips with a back cavity are arranged inside the accommodating cavity. The housing is installed on the case, the MEMS chips are installed in the housing, the housing is arranged with a through hole connecting the empty cavity and the back cavity. The housing is also arranged with a vent hole. The MEMS microphone also includes a membrane flap arranged on the housing and used to close the vent hole. The membrane flap changes its shape under airflow effects and opens the vent hole. The MEMS microphone of this invention can avoid the diaphragm of the MEMS chips being damaged by airflow impact.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: April 3, 2018
    Assignee: AAC TECHNOLOGIES PTE. LTD.
    Inventor: Jinyu Zhang
  • Patent number: 9917568
    Abstract: A substrate structure for an acoustic resonator device. The substrate has a substrate member comprising a plurality of support members configured to form an array structure. In an example, the substrate member has an upper region, and optionally, has a plurality of recessed regions configured by the support members. The substrate has a thickness of single crystal piezo material formed overlying the upper region. In an example, the thickness of single crystal piezo material has a first surface region and a second surface region opposite of the first surface region.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: March 13, 2018
    Assignee: AKOUSTIS, INC.
    Inventor: Jeffrey B. Shealy
  • Patent number: 9911674
    Abstract: Apparatus, and methods of manufacture thereof, in which a molding compound is formed between spaced apart microelectronic devices. The molding compound comprises micro-filler elements. No boundary of any of the micro-filler elements is substantially parallel to a substantially planar surface of the molding compound, or to a substantially planar surface of any of the microelectronic devices.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: March 6, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Chung-Shi Liu, Chih-Fan Huang, Chih-Wei Lin, Wei-Hung Lin, Ming-Da Cheng
  • Patent number: 9902610
    Abstract: A support pillar is formed under a movable film for support. The support pillar includes a plurality of first metal micropillars, a base metal connection pillar layer and a first oxide encapsulation layer. The first metal micropillars are formed under the movable film and conductively connected to the movable film via metal connection. The base metal connection pillar layer is formed under the first metal micropillars and conductively connected to the first metal micropillars. The first oxide encapsulation layer fully or partially encapsulates the first metal micropillars to insulate the first metal micropillars from air, and shape the support pillar into a column shape.
    Type: Grant
    Filed: May 16, 2016
    Date of Patent: February 27, 2018
    Inventors: Chien-Chan Chen, Yi-Der Liang, Shiao-Yi Lin, Cheng-Kuang Yang
  • Patent number: 9893712
    Abstract: The invention relates to an acoustically coupled thin-film BAW filter, comprising a piezoelectric layer, an input-port on the piezoelectric layer changing electrical signal into an acoustic wave (SAW, BAW), and an output-port on the piezoelectric layer changing acoustic signal into electrical signal. In accordance with the invention the ports include electrodes positioned close to each other, and the filter is designed to operate in first order thickness-extensional TE1 mode.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: February 13, 2018
    Assignee: Teknologian Tutkimuskeskus VTT Oy
    Inventors: Johanna Meltaus, Tuomas Pensala
  • Patent number: 9882116
    Abstract: Methods for fabricating a piezoelectric device are provided. The methods can include providing a substrate and forming a nanocrystalline diamond layer on a first surface of the substrate. The methods can also include depositing a piezoelectric layer on a first surface of the nanocrystalline diamond layer.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: January 30, 2018
    Assignee: Indian Institute of Technology Madras
    Inventors: Maneesh Chandran, M. S. Ramachandra Rao
  • Patent number: 9873136
    Abstract: An ultrasonic transducer and a method of manufacturing the same are provided. The ultrasonic transducer includes a substrate, a first insulation layer, and a first thin film layer; a plurality of support members formed on the first thin film layer; a second thin film layer supported by the plurality of support members; a cavity between the first thin film layer and the second thin film layer; and a common ground electrode on the second thin film layer.
    Type: Grant
    Filed: May 1, 2015
    Date of Patent: January 23, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dongsik Shim, Seogwoo Hong, Seokwhan Chung
  • Patent number: 9862592
    Abstract: A MEMS transducer includes a first substrate and a second substrate facing the first substrate. The first substrate includes a piezoelectric diaphragm and a conductive contact structure. The conductive contact structure is electrically connected to the piezoelectric diaphragm, and protrudes beyond a principal surface of the first substrate. The second substrate includes a conductive receiving feature and an active device. The conductive receiving feature is aligned with and further bonded to the conductive contact structure. The active device is electrically connected to the piezoelectric diaphragm through the conductive receiving feature and the conductive contact structure.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: January 9, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Ren Cheng, Richard Yen, Yi-Hsien Chang, Wei-Cheng Shen
  • Patent number: 9857457
    Abstract: A sensor assembly including one or more capacitive micromachined ultrasonic transducer (CMUT) microarray modules which are provided with a number of individual transducers. The microarray modules are arranged to simulate or orient individual transducers in a hyperbolic paraboloid geometry. The transducers/sensor are arranged in a rectangular or square matrix and are activatable individually, selectively or collectively to emit and received reflected beam signals at a frequency of between about 100 to 170 kHz.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: January 2, 2018
    Assignee: UNIVERSITY OF WINDSOR
    Inventor: Sazzadur Chowdhury
  • Patent number: 9837983
    Abstract: An acoustic filter device for telecommunication devices includes a first acoustic band pass filter having a corresponding first passband and a second acoustic band pass filter having a corresponding second passband. The second acoustic band pass filter is connected in parallel with the first acoustic band pass filter to provide a combined passband including the first and second passbands.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: December 5, 2017
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Hongya Xu, Paul Bradley, Andriy Yatsenko, Lueder Elbrecht
  • Patent number: 9826316
    Abstract: A method of fabricating a plurality of MEMS microphone modules by providing a first substrate wafer 62 on which are mounted a plurality of sets comprising an LED 102, an IC chip 22 and a MEM microphone device 24, where the LED 102 and IC chip 22 are surrounded and separated by first spacers 104, 64A, 64, the spacer 104 being much taller, attaching a second substrate on top of the first spacer elements above the IC chip 22, mounting a MEMS microphone device 24 to the second substrate 60, the second substrate not extending over the LED 102, surrounding the MEMS microphone device by second spacers 32A, 32, attaching a cover wafer 28 across the whole first substrate wafer 62 covering all the plurality of sets, forming openings 30 to the MEMS cavities, dividing the substrate wafer 62 into individual MEMS microphone modules through the width of the separating spacers 104, 32, 64. Conductive traces may extend through the spacers.
    Type: Grant
    Filed: May 26, 2014
    Date of Patent: November 21, 2017
    Assignee: Heptagon Micro Optics Pte. Ltd.
    Inventors: Jens Geiger, Markus Rossi, Hartmut Rudmann
  • Patent number: 9812403
    Abstract: A manufacturing method of a semiconductor device that can reduce warpage during wafer processing. The method includes forming a first guard ring around a first chip region on a semiconductor wafer. The method includes forming a second guard ring around a second chip region on the semiconductor wafer. The method includes mechanically connecting the first guard ring with the second guard ring through a joist structure.
    Type: Grant
    Filed: August 24, 2015
    Date of Patent: November 7, 2017
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventor: Kenji Konomi
  • Patent number: 9806592
    Abstract: There are included: an oscillating member that includes a tough layer and a magnetostrictive layer stacked above the tough layer and formed of a magnetostrictive material, the tough layer formed of a tough material having a tensile strength higher than that of the magnetostrictive material; a supporting member to which the oscillating member is attached to be able to oscillate in the thickness direction; a magnetic field applying member that applies a magnetic field to the magnetostrictive layer; and a coil that is disposed around the magnetostrictive layer.
    Type: Grant
    Filed: June 19, 2014
    Date of Patent: October 31, 2017
    Assignee: FUJITSU LIMITED
    Inventor: Osamu Toyoda
  • Patent number: 9790089
    Abstract: A MEMS sensor package comprises a MEMS die that includes a substrate having a sensor formed thereon and a cap layer coupled to the substrate. The cap layer has a cavity overlying a substrate region at which the sensor resides. A port extends between the cavity and a side wall of the MEMS die and enables admittance of fluid into the cavity. Fabrication methodology entails providing a substrate structure having sensors formed thereon, providing a cap layer structure having inwardly extending cavities, and forming a channel between pairs of the cavities. The cap layer structure is coupled with the substrate structure and each channel is interposed between a pair of cavities. A singulation process produces a pair of sensor packages, each having a port formed by splitting the channel, where the port is exposed during singulation and extends between its respective cavity and side wall of the sensor package.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: October 17, 2017
    Assignee: NXP USA, Inc.
    Inventors: Chad S. Dawson, Stephen R. Hooper, Fengyuan Li, Arvind S. Salian
  • Patent number: 9794661
    Abstract: A surface-mountable MEMS microphone comprising a MEMS microphone die and an application-specific integrated circuit (ASIC) mounted inside a surface-mountable package housing, and fully enclosed therein. The surface-mountable package is a single, self-contained housing that provides an electrical interface to external circuitry for the enclosed MEMS microphone die and the ASIC, and provides electrical, physical, and environmental protection for the MEMS microphone die and the ASIC. The surface-mountable package allows external acoustic energy to enter the package interior via one or more acoustic ports and impinge on the diaphragm of the MEMS microphone die. The cover of the surface-mountable package comprises an acoustic port with ingress protection to limit dust and particle intrusion. The ingress protection can be a formed member that is part of the cover of the surface-mountable package having various shapes, an internal shield, or a combination of both a formed member and internal shield.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: October 17, 2017
    Assignee: Knowles Electronics, LLC
    Inventors: Joshua Watson, Daniel Todd Grosse, Michael Robert Jacobs, William F. Schimpf, Ivelisse Del Valle Figueroa
  • Patent number: 9736594
    Abstract: Microelectromechanical systems (MEMS) electret acoustic sensors or microphones, devices, systems, and methods are described. Exemplary embodiments employ electret comprising an inorganic dielectric material such as silicon nitride in MEMS electret acoustic sensors or microphones. Provided implementations include variations in electret acoustic sensor or microphone configuration and recharging of the electret.
    Type: Grant
    Filed: December 5, 2014
    Date of Patent: August 15, 2017
    Assignee: INVENSENSE, INC.
    Inventors: Aleksey S. Khenkin, Mike Daneman