Acoustic Wave Patents (Class 257/416)
  • Patent number: 11021363
    Abstract: In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer and a first sensor that is positioned on a first side of the substrate layer, bonding a cap structure over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: June 1, 2021
    Assignee: NXP USA, Inc.
    Inventors: Lianjun Liu, David J. Monk
  • Patent number: 10998279
    Abstract: A semiconductor chip may include high frequency electrical circuitry. The semiconductor chip may include a cavity resonator integrated with the high frequency electrical circuitry in a semiconductor substrate of the semiconductor chip. The cavity resonator may include a resonator body in a cavity in the semiconductor substrate of the semiconductor chip. The resonator body may comprise a metal layer. The cavity resonator may include a feeding structure electrically connected to the high frequency electrical circuitry.
    Type: Grant
    Filed: August 27, 2018
    Date of Patent: May 4, 2021
    Assignee: Infineon Technologies AG
    Inventors: Dmitri Alex Tschumakow, Claus Dahl
  • Patent number: 10993043
    Abstract: Provided is a MEMS acoustic sensor including a substrate and a cavity, a back plate supported on the substrate and including a plurality of through-holes, at least one anchor projecting from the back plate toward the substrate, and a diaphragm supported by the at least one anchor and deformed by a sound wave introducing from the outside through the cavity, wherein no part of the deformed diaphragm comes into contact with the substrate.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: April 27, 2021
    Assignee: SHIN SUNG C&T CO., LTD.
    Inventors: Sang woo Lee, Ci Moo Song, Keun Jung Youn, Yong Kook Kim, Kyu dong Jung, Muhammad Ali Shah
  • Patent number: 10957688
    Abstract: A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.
    Type: Grant
    Filed: August 5, 2019
    Date of Patent: March 23, 2021
    Assignee: Akoustis, Inc.
    Inventors: Shawn R. Gibb, David M. Aichele, Ramakrishna Vetury, Mark D. Boomgarden, Jeffrey B. Shealy
  • Patent number: 10952324
    Abstract: A spacer is provided to allow a surface mount device (SMD) to be surface mounted onto a PCB with greater degrees of freedom. The spacer is designed to be surface mountable to the PCB and includes an electrically non-conducting body that has a first surface facing the SMD, a second surface facing the PCB, and through holes and/or indents in the electrically non-conducting body to accommodate electrical conductors that provide electrical connections between the SMD and the PCB. The spacer may provide one or more of: an elevated height (so that the SMD is elevated above the PCB), an offset along the surface of the PCB relative to a designated position for the SMD on the PCB, or a tilt in one or more directions relative to a surface of the PCB.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: March 16, 2021
    Assignee: Facebook Technologies, LLC
    Inventor: Raymond Lee
  • Patent number: 10856844
    Abstract: Vertical packaging configurations for ultrasound chips are described. Vertical packaging may involve use of integrated interconnects other than wires for wire bonding. Examples of such integrated interconnects include edge-contact vias, through silicon vias and conductive pillars. Edge-contact vias are vias defined in a trench formed in the ultrasound chip. Multiple vias may be provided for each trench, thus increasing the density of vias. Such vias enable electric access to the ultrasound transducers. Through silicon vias are formed through the silicon handle and provide access from the bottom surface of the ultrasound chip. Conductive pillars, including copper pillars, are disposed around the perimeter of an ultrasound chip and provide access to the ultrasound transducers from the top surface of the chip. Use of these types of packaging techniques can enable a substantial reduction in the dimensions of an ultrasound device.
    Type: Grant
    Filed: May 2, 2019
    Date of Patent: December 8, 2020
    Assignee: Butterfly Network, Inc.
    Inventors: Keith G. Fife, Jianwei Liu
  • Patent number: 10834490
    Abstract: The present disclosure provides a microphone module, an electronic device, and relates to the field of electronic device technology. The microphone module includes a housing, a circuit board, a signal converter, and an adhesive member. The housing is formed with a cavity and an acoustic receiving hole which are connected with each other; the circuit board is connected to the housing to seal a bottom of the cavity; the adhesive member is provided in the cavity; the signal converter for converting an acoustic signal into an electrical signal is electrically connected to the circuit board and provided in the cavity.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: November 10, 2020
    Assignee: Beijing Xiaomi Mobile Software Co., Ltd.
    Inventors: Chiafu Yen, Hui Du
  • Patent number: 10798493
    Abstract: A Micro-Electro-Mechanical Systems (MEMS) device includes a substrate, a dielectric supporting layer, a diaphragm, a backplate. The substrate has a substrate opening corresponding to a diaphragm region. The dielectric supporting layer is disposed on the substrate, having a dielectric opening corresponding to the substrate opening to form the diaphragm region. The diaphragm within the dielectric opening is held by the dielectric supporting layer at a periphery. The backplate is disposed on the dielectric supporting layer, having a plurality of venting holes, connecting to the dielectric opening. The backplate includes a conductive layer and a passivation layer covering over the conductive layer at a first side opposite to the diaphragm, wherein a second side of the conductive layer is facing to the diaphragm and not covered by the passivation layer.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: October 6, 2020
    Assignee: Solid State System Co., Ltd.
    Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Cheng-Wei Tsai
  • Patent number: 10790798
    Abstract: An acoustic resonator includes a substrate having via holes provided therein and having a membrane structure formed on a first surface of the substrate, and a cap accommodating the membrane structure and bonded to the substrate. The cap includes a support block in contact with the membrane structure.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: September 29, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jeong Suong Yang, Sang Hyun Yi, Ho Joon Park, Yeong Gyu Lee
  • Patent number: 10737932
    Abstract: A MEMS structure includes a substrate, a dielectric layer, a membrane, a backplate, and a blocking layer. The substrate has a through-hole. The dielectric layer is disposed on the substrate and has a cavity in communication with the through-hole. The membrane has at least one vent hole, is embedded in the dielectric layer and together with the dielectric layer defines a first chamber that communicates with the through-hole. The backplate is disposed on the dielectric layer. One end of the blocking layer is embedded in the dielectric layer, and the other end of the blocking layer extends into the cavity; the blocking layer is spatially isolated from the membrane and at least partially overlaps with the at least one vent hole.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: August 11, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yuan-Sheng Lin, Jung-Hao Chang, Chang-Sheng Hsu, Weng-Yi Chen
  • Patent number: 10726230
    Abstract: There is disclosed a display panel and its driving method and a display device in the technical field of display. The display panel according to the disclosure includes a base substrate, a driving structure provided on the base substrate, a receiving structure provided above the driving structure, and a fingerprint detection module provided on the base substrate, wherein the driving structure is configured to create an ultrasonic signal, the receiving structure is configured to receive the ultrasonic signal reflected from a finger and transform the reflected ultrasonic signal into an electric signal which is input to the fingerprint detection module, and the fingerprint detection module is configured to determine fingerprint information from the electric signal output by the receiving structure.
    Type: Grant
    Filed: September 30, 2017
    Date of Patent: July 28, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Yingming Liu, Xue Dong, Haisheng Wang, Xiaoliang Ding, Rui Xu, Lijun Zhao
  • Patent number: 10710873
    Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: July 14, 2020
    Assignee: Butterfly Network, Inc.
    Inventors: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez
  • Patent number: 10715923
    Abstract: Disclosed are a condenser MEMS microphone and an electronic apparatus. The condenser MEMS microphone comprises: a substrate; a bottom plate placed on the substrate; and a top plate placed above the bottom plate and spaced from the bottom plate, wherein the top plate is torsional with respect to a first torsional axis and is divided into a first part and a second part by the first torsional axis, the first part and the second part form two condensers with the bottom plate, and a first group of acoustic holes are provided in the first part of the top plate.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: July 14, 2020
    Assignee: GOERTEK INC.
    Inventor: Quanbo Zou
  • Patent number: 10710868
    Abstract: A MEMS sensor including an electrode plate, a diaphragm structure, a support structure, and a pressure relief film. The electrode plate has a conductive portion. The diaphragm structure is disposed at a side of the electrode plate with an interval, and has a sensing film. The support structure is disposed between the diaphragm structure and the electrode plate, and surrounds an electrical coupling zone and a gas flow zone. The support structure includes an inner wall and an outer wall. An outer edge of the gas flow zone is surrounded by the inner wall. An outer edge of the electrical coupling zone is surrounded by the outer wall. The pressure relief film covers the gas flow zone.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: July 14, 2020
    Assignee: Merry Electronics (Shenzhen) Co., Ltd.
    Inventors: Kai-Yu Jiang, Jen-Yi Chen, Chao-Sen Chang
  • Patent number: 10687147
    Abstract: Disclosed are a MEMS microphone and an electronic apparatus. The MEMS microphone comprises: a pressure sensing element, for sensing pressure applied thereon; a diaphragm attached to the pressure sensing element and applying pressure to the pressure sensing element; and a backbone attached to the pressure sensing element and supporting the pressure sensing element.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: June 16, 2020
    Assignee: GOERTEK INC.
    Inventor: Quanbo Zou
  • Patent number: 10665765
    Abstract: A semiconductor device package includes a carrier, a semiconductor device, a lid, a conductive post, a first patterned conductive layer, a conductive element disposed between the first conductive post and the first patterned conductive layer, and an adhesive layer disposed between the lid and the carrier. The conductive post is electrically connected to the first patterned conductive layer. The semiconductor device is electrically connected to the first patterned conductive layer. The lid is disposed on the carrier, and the lid includes a second patterned conductive layer electrically connected to the first conductive post.
    Type: Grant
    Filed: January 2, 2018
    Date of Patent: May 26, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Mei-Yi Wu, Lu-Ming Lai, Yu-Ying Lee, Yung-Yi Chang
  • Patent number: 10627654
    Abstract: An acousto-optic waveguide device comprises a substrate comprising a first material having a first refractive index and a first acoustic velocity; a cladding layer over the substrate, the cladding layer comprising a second material having a second refractive index that is distinct from the first refractive index, the second material having a second acoustic velocity that is distinct from the first acoustic velocity; and an optical core surrounded by the cladding layer, the optical core comprising a third material having a third refractive index that is higher that the first refractive index and the second refractive index, the third material having a third acoustic velocity that is distinct from the first acoustic velocity and the second acoustic velocity. The cladding layer that surrounds the optical core has a thickness configured to substantially confine acoustic waves to the cladding layer when an optical signal propagates through the optical core.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: April 21, 2020
    Assignee: Honeywell International Inc.
    Inventors: Matthew Wade Puckett, Jianfeng Wu, Mary Salit, Tiequn Qiu
  • Patent number: 10587961
    Abstract: The present application relates to a transducer element (1) which comprises: a movable diaphragm (2, 2a, 2b) which has a border (4), a frame (5) to which the border (4) of the diaphragm (2, 2a, 2b) is attached, and a reinforcement element (10) which connects to one another a first sub-section of the frame (5) and a second sub-section of the frame (5) which lies opposite the first sub-section.
    Type: Grant
    Filed: June 12, 2015
    Date of Patent: March 10, 2020
    Assignee: TDK Corporation
    Inventor: Pirmin Hermann Otto Rombach
  • Patent number: 10584025
    Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor structure including a first electrode layer, forming a sacrificial layer on the first electrode layer, the sacrificial layer including a recess having a pointed bottom defining a depth, forming a second electrode layer on the sacrificial layer, the second electrode layer including a first opening exposing the recess, and forming a support layer filling the recess, the first opening, and on the second electrode layer. A portion of the support layer filling the recess forms a stopper having a height equal to the depth of the recess. The method also includes forming a second opening extending through the support layer and the second electrode layer and exposing a surface of the sacrificial layer, and removing a portion of the sacrificial layer to form a cavity.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: March 10, 2020
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventor: Xianchao Wang
  • Patent number: 10562760
    Abstract: The present invention disclosed a micro acoustic collector with a lateral cavity, comprising: a base metal layer; a movable film, an annular side wall; a lateral metal layer. The movable film faces towards the base metal layer to form a hollow space. The lateral metal layer is formed at a side of the movable film and around the movable film, fixed by the annular side wall and spaced apart from peripheral of the movable film by a distance, and the lateral metal layer faces towards the base metal layer to form a lateral cavity to assist an acoustic collection.
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: February 18, 2020
    Inventors: Chien-Chang Chen, Yi-Der Liang, Shiao-Yi Lin, Cheng-Kuang Yang
  • Patent number: 10560771
    Abstract: In accordance with an embodiment, microelectromechanical microphone includes a holder and a sound detection unit carried on the holder. The sound detection unit includes a planar first membrane, a planar second membrane arranged at a distance from the first membrane, a low-pressure chamber formed between the first membrane and the second membrane, a reduced gas pressure relative to normal pressure being present in the low-pressure chamber, a reference electrode arranged at least in sections in the low-pressure chamber, where the first and second membranes are displaceable relative to the reference electrode by sound waves to be detected, the reference electrode includes a planar base section and a stiffening structure provided on the base section, and the stiffening structure is provided on a side of the base section that faces the first membrane or/and on a side of the base section that faces the second membrane.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: February 11, 2020
    Assignee: Infineon Technologies AG
    Inventors: Alfons Dehe, Gerhard Metzger-Brueckl, Johann Strasser, Arnaud Walther, Andreas Wiesbauer
  • Patent number: 10541230
    Abstract: A semiconductor device includes a first laminated body and a second laminated body. The first laminated body includes sequentially a first element, a first wiring layer, and a first connection layer that includes a first junction electrode, on a main surface of a first substrate. The second laminated body includes sequentially a second element, a second wiring layer, and a second connection layer that includes a second junction electrode, on a main surface of a semiconductor substrate. The first laminated body and the second laminated body are bonded by directly bonding the first junction electrode and the second junction electrode with the two junction electrodes facing each other. A space region is formed at a part of a junction interface between the first laminated body and the second laminated body.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: January 21, 2020
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Yuichi Higuchi, Hideyuki Arai
  • Patent number: 10525506
    Abstract: An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: January 7, 2020
    Assignee: Butterfly Networks, Inc.
    Inventors: Susan A. Alie, Keith G. Fife, Joseph Lutsky, David Grosjean
  • Patent number: 10512936
    Abstract: An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.
    Type: Grant
    Filed: June 20, 2018
    Date of Patent: December 24, 2019
    Assignee: Butterfly Network, Inc.
    Inventors: Susan A. Alie, Keith G. Fife, Joseph Lutsky, David Grosjean
  • Patent number: 10516090
    Abstract: A backing member includes: a resin layer which contains a filler; and a plurality of leads each of which is embedded in the resin layer to penetrate through the resin layer from an upper surface of the resin layer to a lower surface of the resin layer. Each of the leads includes a wiring portion, and a terminal portion connected to one end of the wiring portion. A width dimension and a depth dimension of the wiring portion are smaller than a width dimension and a depth dimension of the terminal portion, and an interval between adjacent ones of the wiring portions of the leads is wider than an average particle size of the filler.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: December 24, 2019
    Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
    Inventor: Haruo Sorimachi
  • Patent number: 10510630
    Abstract: Apparatus, and methods of manufacture thereof, in which a molding compound is formed between spaced apart microelectronic devices. The molding compound comprises micro-filler elements. No boundary of any of the micro-filler elements is substantially parallel to a substantially planar surface of the molding compound, or to a substantially planar surface of any of the microelectronic devices.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Chung-Shi Liu, Chih-Fan Huang, Chih-Wei Lin, Wei-Hung Lin, Ming-Da Cheng
  • Patent number: 10508020
    Abstract: The present disclosure provides a substrate structure for a micro electro mechanical system (MEMS) device. The substrate structure includes a cap and a micro electro mechanical system (MEMS) substrate. The cap has a cavity, and the MEMS substrate is disposed on the cap. The MEMS substrate has a plurality of through holes exposing the cavity, and an aspect ratio of the through hole is greater than 30.
    Type: Grant
    Filed: January 20, 2017
    Date of Patent: December 17, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tsai-Hao Hung, Shih-Chi Kuo, Tsung-Hsien Lee, Tao-Cheng Liu
  • Patent number: 10506356
    Abstract: In a capacitively operating MEMS microphone, by varying the BIAS voltage, the pull-in point is determined and the present pull-in voltage and the corresponding pull-in capacitance between membrane and back electrode are ascertained. From the deviation of the present pull-in point from the values of a first pull-in point, these values being determined after an end test and stored in an internal memory of the MEMS microphone, and the likewise stored values at a first operating point a recalibrated BIAS voltage is determined and set in order thereby to bring the sensitivity closer again to that at the original first operating point.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: December 10, 2019
    Assignee: TDK Corporation
    Inventors: Sebastian Walser, Christian Siegel, Matthias Winter
  • Patent number: 10483248
    Abstract: An electronics package includes a semiconductor substrate having one or more passive devices formed thereon and a cavity defined in a first surface thereof. A piezoelectric substrate is bonded to the semiconductor substrate and has a radio frequency (RF) filter formed thereon. The RF filter is disposed within the cavity defined in the semiconductor substrate.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: November 19, 2019
    Assignee: SKYWORKS SOLUTIONS, INC.
    Inventors: Jiro Yota, Hong Shen, Viswanathan Ramanathan
  • Patent number: 10483875
    Abstract: A surface elastic wave generator may include a substrate. A first conductivity type region is formed in the substrate. A second conductivity type doped region includes at least one doping pattern doped on surface of the first conductivity type region. Through applying reverse bias to junctions between the first conductivity type region and the second conductivity type doped region, a depletion capacitance region is formed. Also, through inputting signal to the first conductivity type region or the second conductivity type doped region, the surface elastic wave is generated on the substrate. In addition, a surface elastic wave transceiver and surface elastic wave generation method are also provided.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: November 19, 2019
    Assignee: Industrial Technology Research Institute
    Inventors: Feng-Chia Hsu, Tsun-Che Huang, Jyun-Cheng Huang
  • Patent number: 10455310
    Abstract: A microphone unit including a substrate, a microphone, a fixing member, and a film. The substrate includes a first face, a second face opposite to the first face, and a through-hole extending from the first face to the second face through the substrate. The microphone is mounted on or fixed onto the second face of the substrate and has a sound hole in communication with the through-hole of the substrate. The fixing member is fixed onto the first face of the substrate such as to be located around the through-hole. The film provides at least one of dustproofness and waterproofness and is fixed onto the fixing member such as to cover the through-hole.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: October 22, 2019
    Assignee: HOSIDEN CORPORATION
    Inventors: Keina Tsutsui, Tetsuji Muraoka, Hidenori Motonaga, Kensuke Nakanishi
  • Patent number: 10448171
    Abstract: A microphone is provided, including a backplate, a base supporting the backplate, and a diaphragm spaced apart from the backplate and forming a capacitor with the backplate. The base includes a top surface abutting against the backplate and a recess recessed from the top surface in a direction facing away from the backplate, the diaphragm is arranged in the recess, and the recess has a recess bottom. The base further includes a through hole penetrating through the recess bottom. The microphone provided by the present disclosure has an advantage of high reliability.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: October 15, 2019
    Assignee: AAC Acoustic Technologies (Shenzhen) Co., Ltd.
    Inventor: Jinyu Zhang
  • Patent number: 10446507
    Abstract: A semiconductor device includes a semiconductor die comprising integrated circuitry over a substrate of a semiconductor material. A first die ring comprises one or more electrically conductive materials at least partially surrounding the integrated circuitry, the one or more electrically conductive materials comprising an electrically conductive path from proximate a surface of the substrate to an exposed surface of the semiconductor die. A second die ring comprises an electrically conductive material and is disposed around the first die ring. A first electrically conductive interconnect electrically connects the first die ring and to second die ring. Related semiconductor devices and semiconductor dice are disclosed.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: October 15, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Hongbin Zhu, Qinglin Zeng, Daniel Osterberg, Merri L. Carlson, Gordon A. Haller, Jeremy Adams
  • Patent number: 10442681
    Abstract: A micromechanical system including a sensitive element, the system including a first area in which the sensitive element is situated, and a second area which at least partially surrounds the first area. Furthermore, the system includes a holding element having an elastic property, which joins the first area to the second area, and a joining material, with the aid of which the second area may be joined to a substrate. A spacing area is provided between the first area and the second area. The joining material extends into the spacing area so that a possible movement of the first area caused by the elastic property of the holding element is limited.
    Type: Grant
    Filed: February 2, 2018
    Date of Patent: October 15, 2019
    Assignee: Robert Bosch GmbH
    Inventors: Daniel Haug, Hans-Peter Baer, Mike Schwarz, Volkmar Senz
  • Patent number: 10440481
    Abstract: A capacitive transducer includes a substrate having an opening in a surface thereof, a back plate facing the opening in the substrate, a vibration electrode film facing the back plate across a space, the vibration electrode film being deformable to have a deformation converted into a change in capacitance between the vibration electrode film and the back plate, the vibration electrode film having a through-hole as a pressure relief hole, and a protrusion integral with and formed from the same member as the back plate, the protrusion being placeable in the pressure relief hole before the vibration electrode film deforms. The protrusion and the pressure relief hole have a gap therebetween defining an airflow channel as a pressure relief channel.
    Type: Grant
    Filed: January 31, 2017
    Date of Patent: October 8, 2019
    Assignee: OMRON Corporation
    Inventors: Takashi Kasai, Koji Momotani, Mariko Terasaka
  • Patent number: 10431580
    Abstract: A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.
    Type: Grant
    Filed: January 12, 2017
    Date of Patent: October 1, 2019
    Assignee: Akoustis, Inc.
    Inventors: Shawn R. Gibb, David Aichele, Ramakrishna Vetury, Mark D. Boomgarden, Jeffrey B. Shealy
  • Patent number: 10416147
    Abstract: A method of manufacturing a membrane device comprises: a first step of forming a pillar structure on a part of a Si substrate by etching; a second step of forming a first insulation layer on the Si substrate so as to expose a Si surface of an upper part of the pillar structure; a third step of forming a second insulation layer on the pillar structure and the first insulation layer; and a fourth step of etching the Si substrate from an opposite side of the second insulation layer and etching the pillar structure with the first insulation layer being a mask, to thereby form a membrane, which is a region free of the pillar structure in the second insulation layer.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: September 17, 2019
    Assignee: HITACHI, LTD.
    Inventors: Itaru Yanagi, Kenichi Takeda
  • Patent number: 10412491
    Abstract: The present invention discloses a band-pass acoustic filter and an acoustic sensing apparatus. The band-pass acoustic filter including at least two MEMS microphone chips and an ASIC chip, wherein the output signals of the MEMS microphone chips are processed in the ASIC chip after being coupled.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: September 10, 2019
    Assignee: GOERTEK, INC.
    Inventor: Quanbo Zou
  • Patent number: 10366192
    Abstract: Non-transitory computer-readable media to perform a method for designing a multiband filter. The method includes generating an initial circuit structure comprising a desired number and type of circuit elements; generating an initial circuit design by mapping the frequency response requirements of the initial circuit structure into normalized space; generating an acoustic filter circuit design by transferring the initial filter circuit design; generating a pre-optimized circuit design by unmapping one or more circuit elements of the acoustic filter circuit design into real space and introducing parasitic effects; and communicating the pre-optimized circuit design to a filter optimizer that generates a final circuit design comprising a plurality of resonators, wherein a first resonator exhibits a high resonant frequency, a second resonator demonstrates a low resonant frequency and the difference between the low resonant frequency and the high resonant frequency is at least 1.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: July 30, 2019
    Assignee: Resonant Inc.
    Inventors: Patrick J. Turner, Richard N. Silver, Balam Quitze Andres Willemsen Cortes, Kurt F. Raihn, Neal O. Fenzi, Robert B. Hammond
  • Patent number: 10351416
    Abstract: A model is specified in which a MEMS component is connected to the carrier in a stress-free fashion over a large temperature range. For this purpose, a mechanical connection comprises a compensation structure which bridges a horizontal offset of mounting points by means of a horizontal shoulder and the thermal expansion coefficient of which is suitably selected.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: July 16, 2019
    Assignee: TDK Corporation
    Inventor: Pirmin Hermann Otto Rombach
  • Patent number: 10315912
    Abstract: A microelectromechanical system (MEMS) includes a diaphragm with a first surface and a second surface. The first surface is exposed to an environmental pressure. The second surface comprises a plurality of fingers extending from the second surface. The MEMS also includes a backplate comprising a plurality of voids. Each of the plurality of fingers extends into a respective one of the plurality of voids. The MEMS further includes an insulator between a portion of the diaphragm and a portion of the backplate. The diaphragm is configured to move with respect to the backplate in response to changes in the environmental pressure.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: June 11, 2019
    Assignee: Knowles Electronics, LLC
    Inventors: Mohsin Nawaz, Michael Kuntzman, Michael Pedersen
  • Patent number: 10315403
    Abstract: A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: June 11, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Hideki Shimoi, Naoki Uchiyama, Daisuke Kawaguchi
  • Patent number: 10312882
    Abstract: In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: June 4, 2019
    Inventors: Cindy X. Qiu, Ishiang Shih, Chunong Qiu, Andy Shih, Julia Qiu, Yi-Chi Shih
  • Patent number: 10306369
    Abstract: The present disclosure provides a vibration diaphragm. The vibration diaphragm includes a vibration dome; a suspension part surrounding the dome; and a reinforced part assembled with the dome. The reinforced part includes n pieces of longitudinal bar parts, a first transverse bar part and a second transverse bar part connecting ends of adjacent n pieces of the longitudinal bars respectively, and a third transverse bar part connecting n?1 pieces of longitudinal bar parts and located between the first transverse bar part and the second transverse bar part, where, n is an integer more than or equal to 3. The configuration of the reinforced ribs increases the surface area of the dome, and increases the width of the vibration frequency band of the vibration diaphragm.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: May 28, 2019
    Assignee: AAC TECHNOLOGIES PTE. LTD.
    Inventors: Xiaojiang Gu, Meiwei Wu
  • Patent number: 10283427
    Abstract: Apparatus, and methods of manufacture thereof, in which a molding compound is formed between spaced apart microelectronic devices. The molding compound comprises micro-filler elements. No boundary of any of the micro-filler elements is substantially parallel to a substantially planar surface of the molding compound, or to a substantially planar surface of any of the microelectronic devices.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: May 7, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chen-Hua Yu, Chung-Shi Liu, Chih-Fan Huang, Chih-Wei Lin, Wei-Hung Lin, Ming-Da Cheng
  • Patent number: 10281646
    Abstract: An acousto-optic waveguide device comprises a substrate comprising a first material having a first refractive index and a first acoustic velocity; a cladding layer over the substrate, the cladding layer comprising a second material having a second refractive index that is distinct from the first refractive index, the second material having a second acoustic velocity that is distinct from the first acoustic velocity; and an optical core surrounded by the cladding layer, the optical core comprising a third material having a third refractive index that is higher that the first refractive index and the second refractive index, the third material having a third acoustic velocity that is distinct from the first acoustic velocity and the second acoustic velocity. The cladding layer that surrounds the optical core has a thickness configured to substantially confine acoustic waves to the cladding layer when an optical signal propagates through the optical core.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: May 7, 2019
    Assignee: Honeywell International Inc.
    Inventors: Matthew Wade Puckett, Jianfeng Wu, Mary Salit, Tiequn Qiu
  • Patent number: 10273150
    Abstract: The present invention discloses a manufacturing method of an integrated structure of a MEMS microphone and a pressure sensor, which comprises the following steps: depositing an insulating layer, a first polycrystalline silicon layer, a sacrificial layer and a second polycrystalline silicon layer in sequence on a shared substrate; etching the second polycrystalline silicon layer to form a vibrating diaphragm and an upper electrode; eroding the sacrificial layer to form a containing cavity of a microphone and a pressure sensor, and etching the sacrificial layer between the microphone and the pressure sensor; etching the first polycrystalline silicon layer to form a back electrode of the microphone and a lower electrode of the pressure sensor; etching a position of the shared substrate below a back electrode of the microphone to form a back cavity; and etching away the region of the insulating layer below the back electrode.
    Type: Grant
    Filed: December 14, 2015
    Date of Patent: April 30, 2019
    Assignee: Goertek.Inc
    Inventor: Yanmei Sun
  • Patent number: 10266401
    Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: April 23, 2019
    Assignee: Butterfly Network, Inc.
    Inventors: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez
  • Patent number: 10266394
    Abstract: A MEMS transducer package (300) comprises a package cover (313) comprising a first bonding region (316) and an integrated circuit die (319) comprising a second bonding region (314) for bonding with the first bonding region of the package cover. The integrated circuit die (309) comprises an integrated MEMS transducer (311) and integrated electronic circuitry (312) in electrical connection with the integrated MEMS transducer. The footprint of the integrated electronic circuitry (312) at least overlaps the bonding region (314) of the integrated circuit die (309).
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: April 23, 2019
    Assignee: Cirrus Logic, Inc.
    Inventor: Tsjerk Hans Hoekstra
  • Patent number: 10263601
    Abstract: A tunable BAW filter device operating in an allocated channel of a predetermined frequency band includes a voltage source and multiple BAW resonators. The voltage source selectively provides non-zero DC bias voltage based on a location of the allocated channel within the frequency band. Each BAW resonator has a resonance frequency, and includes a bottom electrode, a piezoelectric layer and a top electrode disposed over the piezoelectric layer, the top electrode being electrically connected to the voltage source via a resistor. The voltage source is activated, applying the non-zero DC bias voltage to the top electrode of each BAW resonator, when the location of the allocated channel is near an upper or lower corner of the frequency band. The resonance frequency of each BAW resonator is shifted in response to the non-zero DC bias voltage toward a center of the frequency band, improving insertion loss of the BAW filter device.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: April 16, 2019
    Assignee: Avago Technologies International Sales Pte. Limited
    Inventor: Paul Bradley