Means To Reduce Sensitivity To Physical Deformation Patents (Class 257/420)
  • Patent number: 10254354
    Abstract: The present disclosure is directed to an electronic circuit having a Hall effect element and a resistor bridge, all disposed over a common semiconductor substrate. The resistor bridge includes a first set of resistive elements having a first vertical epitaxial resistor and a first lateral epitaxial resistor coupled in series, and a second set of resistive elements having a second vertical epitaxial resistor and a second lateral epitaxial resistor coupled in series. The first set of resistive elements and the second set of resistive elements can be coupled in parallel. The resistor bridge can be configured to sense a stress value of the Hall effect element.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: April 9, 2019
    Assignee: Allegro MicroSystems, LLC
    Inventor: Juan Manuel Cesaretti
  • Patent number: 9640434
    Abstract: A method for processing an electroplated copper film in copper interconnect process is disclosed by the present invention. Firstly, in the copper back-end-of-line interconnect process, the first annealing process for the electroplated copper film is performed at or below 180° C.; then, after the copper back-end-of-line interconnect process, another annealing process with higher temperature (equal or above 240° C.) to the electroplated copper film is performed to make the copper recrystallize, so as to decrease the resistivity of the electroplated copper film and form an interface state having lower resistivity at the interface of the vias bottom, which decrease the contact resistance between the vias and the underlying copper interconnects and further reduce the RC time delay in the vias. The present invention can be applied in the Cu/Low-k back-end-of-line interconnect process and compatible with the standard Cu/Low-k back-end-of-line process integration.
    Type: Grant
    Filed: August 25, 2014
    Date of Patent: May 2, 2017
    Assignee: SHANGHAI IC R&D CENTER CO., LTD
    Inventor: Hong Lin
  • Patent number: 9559078
    Abstract: An electronic component includes an electrically conductive carrier. The electrically conductive carrier includes a carrier surface and a semiconductor chip includes a chip surface. One or both of the carrier surface and the chip surface include a non-planar structure. The chip is attached to the carrier with the chip surface facing towards the carrier surface so that a gap is provided between the chip surface and the carrier surface due to the non-planar structure of one or both of the carrier surface and the first chip surface. The electronic component further includes a first galvanically deposited metallic layer situated in the gap.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: January 31, 2017
    Assignee: Infineon Technologies AG
    Inventors: Joachim Mahler, Manfred Mengel, Khalil Hosseini, Klaus Schmidt, Franz-Peter Kalz
  • Patent number: 9520306
    Abstract: A process for fabricating an integrated circuit package includes selectively etching a leadframe strip to define a die attach pad and a plurality of contact pads. At least one side of the die attach pad has a plurality of spaced apart pad portions. A semiconductor die is mounted to the die attach pad and wires are bonded from the semiconductor die to respective ones of the contact pads. A first surface of the leadframe strip, including the semiconductor die and wire bonds, is encapsulated in a molding material such that at least one surface of the leadframe strip is exposed. The integrated circuit package is singulated from a remainder of the leadframe strip.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: December 13, 2016
    Assignee: UTAC HEADQUARTERS PTE. LTD.
    Inventors: Geraldine Tsui Yee Lin, Walter de Munnik, Kin Pui Kwan, Wing Him Lau, Kwok Cheung Tsang, Chun Ho Fan, Neil McLellan
  • Patent number: 9054222
    Abstract: A pressure difference sensor includes a capsule, which has a ceramic capsule body. The capsule has a transducer seat in its interior, wherein there is arranged in the transducer seat a semiconductor pressure measuring transducer core, which has a measuring membrane body and at least one support body. The measuring membrane body is connected pressure-tightly with the at least one support body, which has a pressure inlet opening.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: June 9, 2015
    Assignee: Endress + Hauser GmbH + Co. KG
    Inventors: Anh Tuan Tham, Frank Passler, Rafael Teipen
  • Patent number: 9040335
    Abstract: A semiconductor sensor device has a pressure sensing die and at least one other die mounted on a substrate, and electrical interconnections that interconnect the pressure sensing die and the at least one other die. An active region of the pressure sensing die is covered with a pressure sensitive gel material, and a cap having a cavity is mounted over the pressure sensing die such that the pressure sensing die is positioned within the cavity. The cap has a side vent hole that exposes the gel covered active region of the pressure sensing die to ambient atmospheric pressure outside the sensor device. Molding compound on an upper surface of the substrate encapsulates the at least one other die and at least a portion of the cap.
    Type: Grant
    Filed: September 17, 2013
    Date of Patent: May 26, 2015
    Assignee: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Low Boon Yew, Chee Seng Foong, Teck Beng Lau
  • Patent number: 9006845
    Abstract: A MEMS device, a method of making a MEMS device and a system of a MEMS device are shown. In one embodiment, a MEMS device includes a first polymer layer, a MEMS substrate disposed on the first polymer layer and a MEMS structure supported by the MEMS substrate. The MEMS device further includes a first opening disposed in the MEMS substrate and a second opening disposed in the first polymer layer.
    Type: Grant
    Filed: January 16, 2013
    Date of Patent: April 14, 2015
    Assignee: Infineon Technologies, A.G.
    Inventor: Alfons Dehe
  • Patent number: 9002034
    Abstract: In a method and system for audio level detection and control, an amplitude of an audio signal may be compared to a threshold and an attenuation applied to the audio signal may be adjusted based on the comparison. In instances that the amplitude of the audio signal is greater than or equal to the threshold the adjustment may comprise increasing a first attenuation factor until the amplitude of the audio signal is less than the threshold. The first attenuation factor may be subsequently decreased until the amplitude of the audio signal is greater than or equal to the threshold or until the first attenuation factor is equal to zero. The attenuation of the audio signal may be controlled via a digital gain circuit within the hardware audio CODEC, wherein an overall attenuation factor of the digital gain circuit is a sum of the first attenuation factor and a second attenuation factor.
    Type: Grant
    Filed: June 25, 2012
    Date of Patent: April 7, 2015
    Assignee: Broadcom Corporation
    Inventors: Nelson Sollenberger, Radhakrishnan Kuzhipatt, Hongwei Kong
  • Patent number: 9000541
    Abstract: A photoelectric conversion device includes circuit portions disposed on a substrate, a first electrode electrically connected to one of the circuit portions, an optically transparent second electrode opposing the first electrode, and a photoelectric conversion portion disposed between the first electrode and the second electrode. The photoelectric conversion portion has a multilayer structure including a light absorption layer made of a p-type compound semiconductor film having a chalcopyrite structure, an amorphous oxide semiconductor layer, and a window layer made of an n-type semiconductor film.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: April 7, 2015
    Assignee: Seiko Epson Corporation
    Inventors: Yasunori Hattori, Tomotaka Matsumoto, Tsukasa Eguchi
  • Patent number: 8994128
    Abstract: The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.
    Type: Grant
    Filed: January 10, 2011
    Date of Patent: March 31, 2015
    Assignee: ELMOS Semiconductor AG
    Inventor: Arnd Ten Have
  • Patent number: 8987844
    Abstract: A MEMS capacitive transducer with increased robustness and resilience to acoustic shock. The transducer structure includes a flexible membrane supported between a first volume and a second volume, and at least one variable vent structure in communication with at least one of the first and second volumes. The variable vent structure includes at least one moveable portion which is moveable in response to a pressure differential across the moveable portion so as to vary the size of a flow path through the vent structure. The variable vent may be formed through the membrane and the moveable portion may be a part of the membrane, defined by one or more channels, that is deflectable away from the surface of the membrane. The variable vent is preferably closed in the normal range of pressure differentials but opens at high pressure differentials to provide more rapid equalization of the air volumes above and below the membrane.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: March 24, 2015
    Assignee: Cirrus Logic International (UK) Limited
    Inventors: Colin Robert Jenkins, Tsjerk Hans Hoekstra, Euan James Boyd
  • Publication number: 20150054101
    Abstract: A micromechanical component comprising a substrate having a main plane of extension, comprising a movable element, and comprising a spring arrangement assemblage is provided, the movable element being attached to the substrate by way of the spring arrangement assemblage, the movable element being deflectable out of a rest position into a deflection position, the movable element encompassing a first sub-element and a second sub-element connected to the first sub-element, the first sub-element extending mainly along the main plane of extension of the substrate, the second sub-element extending mainly along a functional plane, the functional plane being disposed substantially parallel to the main plane of extension of the substrate, the functional plane being spaced away from the main plane of extension.
    Type: Application
    Filed: August 25, 2014
    Publication date: February 26, 2015
    Applicant: Robert Bosch GmbH
    Inventor: Jochen REINMUTH
  • Patent number: 8941194
    Abstract: A pressure sensor device is assembled by forming cavities on a surface of a metal sheet and then forming an electrically conductive pattern having traces and bumps over the cavities. An insulating layer is formed on top of the pattern and then processed to form exposed areas and die attach areas on the surface of the metal sheet. The exposed areas are plated with a conductive metal and then electrically connected to respective ones of the bumps. A gel is dispensed on the die attach areas and sensor dies are attached to respective die attach areas. One or more additional semiconductor dies are attached to the insulating layer and bond pads of these dies are electrically connected to the exposed plated areas. A molding compound is dispensed such that it covers the sensor die and the additional dies. The metal sheet is removed to expose outer surfaces of the bumps.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: January 27, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Wai Yew Lo, Fui Yee Lim
  • Patent number: 8916943
    Abstract: An integrated circuit device includes a first layer comprising at least two partial cavities, an intermediate layer bonded to the first layer, the intermediate layer formed to support at least two Micro-electromechanical System (MEMS) devices, and a second layer bonded to the intermediate layer, the second layer comprising at least two partial cavities to complete the at least two partial cavities of the first layer through the intermediate layer to form at least two sealed full cavities. The at least two full cavities have different pressures within.
    Type: Grant
    Filed: March 1, 2013
    Date of Patent: December 23, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shyh-Wei Cheng, Jui-Chun Weng, Hsi-Cheng Hsu, Chih-Yu Wang, Jung-Kuo Tu, Che-Jung Chu, Yu-Ting Hsu
  • Patent number: 8912613
    Abstract: Provided are a dual-side micro gas sensor and a method of fabricating the same. The sensor may include an elastic layer, a heat-generating resistor layer on the elastic layer, an interlayered insulating layer on the heat-generating resistor layer, an upper sensing layer on the interlayered insulating layer, and a lower sensing layer provided below the elastic layer to face the heat-generating resistor layer, thereby reducing heat loss of the heat-generating resistor layer.
    Type: Grant
    Filed: June 4, 2013
    Date of Patent: December 16, 2014
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyung-Kun Lee, Seungeon Moon, Nak Jin Choi, Jaewoo Lee
  • Patent number: 8884385
    Abstract: Provided by some aspects of the invention is a relatively low-cost, relatively highly accurate physical quantity sensor, and a manufacturing method thereof, that relaxes thermal stress from an outer peripheral portion of a diaphragm in a silicon-on-nothing (“SON”) structure. By providing a stress relaxation region (trench groove) in an outer peripheral portion of a diaphragm in a SON structure, there can be, in some aspects of the invention, a benefit of relaxing the transmission to the diaphragm of thermal stress generated by the difference in linear expansion coefficient between a package and chip, and it is possible to relax the transmission to an electronic circuit disposed in an outer peripheral portion of mechanical stress generated by a measured pressure. As a result of this, it is possible to provide a highly accurate physical quantity sensor.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: November 11, 2014
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Mutsuo Nishikawa, Kazunori Saito
  • Patent number: 8860154
    Abstract: The present invention provides a CMOS compatible silicon differential condenser microphone and a method of manufacturing the same.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: October 14, 2014
    Assignee: Goertek Inc.
    Inventor: Zhe Wang
  • Patent number: 8847336
    Abstract: In a micromechanical component having an inclined structure and a corresponding manufacturing method, the component includes a substrate having a surface; a first anchor, which is provided on the surface of the substrate and which extends away from the substrate; and at least one cantilever, which is provided on a lateral surface of the anchor, and which points at an inclination away from the anchor.
    Type: Grant
    Filed: November 28, 2008
    Date of Patent: September 30, 2014
    Assignee: Robert Bosch GmbH
    Inventors: Tjalf Pirk, Stefan Pinter, Hubert Benzel, Heribert Weber, Michael Krueger, Robert Sattler, Frederic Njikam Njimonzie, Joerg Muchow, Joachim Fritz, Christoph Schelling, Christoph Friese
  • Patent number: 8836055
    Abstract: A device includes a micro-electro-mechanical system (MEMS) device, which includes a movable element and a fixed element. The movable element and the fixed element form two capacitor plates of a capacitor, with an air-gap between the movable element and the fixed element acting as a capacitor insulator of the capacitor. At least one of the movable element and the fixed element has a rugged surface.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: September 16, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Lung Yuan Pan, Lan-Lin Chao, Chia-Shiung Tsai
  • Patent number: 8836052
    Abstract: An electromechanical transducer includes multiple elements each having multiple cells, with each cell including a first electrode formed from a conductive substrate, and a second electrode opposed to a first face of the conductive substrate and across a gap. The multiple cells of each of the elements are electrically connected, and the conductive substrate is divided for each of the elements by grooves extending from the first face to a second face which is opposite from the first face. In addition, insulating films are formed on opposing side walls of the conductive substrate and define each of the grooves, wherein a gap width of each of the grooves is narrower on the second face side of the conductive substrate than on the first face side of the conductive substrate.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: September 16, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hideyuki Itoh, Takahiro Ezaki
  • Patent number: 8822254
    Abstract: A MEMS manufacturing method and device in which a spacer layer is provided over a side wall of at least one opening in a structural layer which will define the movable MEMS element. The opening extends below the structural layer. The spacer layer forms a side wall portion over the side wall of the at least one opening and also extends below the level of the structural layer to form a contact area.
    Type: Grant
    Filed: December 6, 2011
    Date of Patent: September 2, 2014
    Assignee: NXP, B.V.
    Inventors: Jozef Thomas Martinus Van Beek, Klaus Reimann, Remco Henricus Wilhelmus Pijnenburg, Twan Van Lippen
  • Patent number: 8816451
    Abstract: In a MEMS structure, a first trench which penetrates the first layer, the second layer and the third layer is formed, and a second trench which penetrates the fifth layer, the forth layer and the third layer is formed. The first trench forms a first part of an outline of the movable portion in a view along the stacked direction. The second trench forms a second part of the outline of the movable portion in the view along the stacked direction. At least a part of the first trench overlaps with the first extending portion in the view along the stacked direction.
    Type: Grant
    Filed: February 25, 2011
    Date of Patent: August 26, 2014
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Hirofumi Funabashi, Yutaka Nonomura, Yoshiyuki Hata, Motohiro Fujiyoshi, Teruhisa Akashi, Yoshiteru Omura
  • Patent number: 8809917
    Abstract: Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.
    Type: Grant
    Filed: July 29, 2009
    Date of Patent: August 19, 2014
    Assignee: Nantero Inc.
    Inventors: Claude L. Bertin, X. M. Henry Huang, Thomas Rueckes, Ramesh Sivarajan
  • Patent number: 8779533
    Abstract: In one embodiment, a method of opening a passageway to a cavity includes providing a donor portion, forming a heating element adjacent to the donor portion, forming a first sacrificial slab abutting the donor portion, wherein the donor portion and the sacrificial slab are a shrinkable pair, forming a first cavity, a portion of the first cavity bounded by the first sacrificial slab, generating heat with the heating element, forming a first reduced volume slab from the first sacrificial slab using the generated heat and the donor portion, and forming a passageway to the first cavity by forming the first reduced volume slab.
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: July 15, 2014
    Assignee: Robert Bosch GmbH
    Inventors: Ando Feyh, Po-Jui Chen
  • Patent number: 8759926
    Abstract: In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: June 24, 2014
    Assignee: DENSO CORPORATION
    Inventors: Tetsuo Fujii, Keisuke Gotoh
  • Patent number: 8737171
    Abstract: A MEMS capacitive transducer with increased robustness and resilience to acoustic shock. The transducer structure includes a flexible membrane supported between a first volume and a second volume, and at least one variable vent structure in communication with at least one of the first and second volumes. The variable vent structure includes at least one moveable portion which is moveable in response to a pressure differential across the moveable portion so as to vary the size of a flow path through the vent structure. The variable vent may be formed through the membrane and the moveable portion may be a part of the membrane, defined by one or more channels, that is deflectable away from the surface of the membrane. The variable vent is preferably closed in the normal range of pressure differentials but opens at high pressure differentials to provide more rapid equalization of the air volumes above and below the membrane.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: May 27, 2014
    Assignee: Wolfson Microelectronics plc
    Inventors: Colin Robert Jenkins, Tsjerk Hans Hoekstra, Euan James Boyd
  • Patent number: 8722445
    Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a plurality of discrete wires on a substrate. The method further includes forming a sacrificial cavity layer on the discrete wires. The method further includes forming trenches in an upper surface of the sacrificial cavity layer. The method further includes filling the trenches with dielectric material. The method further includes depositing metal on the sacrificial cavity layer and on the dielectric material to form a beam with at least one dielectric bumper extending from a bottom surface thereof.
    Type: Grant
    Filed: December 20, 2010
    Date of Patent: May 13, 2014
    Assignee: International Business Machines Corporation
    Inventors: Dinh Dang, Thai Doan, Jeffrey C. Maling, Anthony K. Stamper
  • Patent number: 8716852
    Abstract: A device includes a capping substrate bonded with a substrate structure. The substrate structure includes an integrated circuit structure. The integrated circuit structure includes a top metallic layer disposed on an outgasing prevention structure. At least one micro-electro mechanical system (MEMS) device is disposed over the top metallic layer and the outgasing prevention structure.
    Type: Grant
    Filed: February 17, 2012
    Date of Patent: May 6, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Pao Shu, Chia-Ming Hung, Wen-Chuan Tai, Hung-Sen Wang, Hsiang-Fu Chen, Alex Kalnitsky
  • Patent number: 8692340
    Abstract: A MEMS device is disclosed. The MEMS device comprises a first plate with a first surface and a second surface; and an anchor attached to a first substrate. The MEMS device further includes a second plate with a third surface and a fourth surface attached to the first plate. A linkage connects the anchor to the first plate, wherein the first plate and second plate are displaced in the presence of an acoustic pressure differential between the first and second surfaces of the first plate. The first plate, second plate, linkage, and anchor are all contained in an enclosure formed by the first substrate and a second substrate, wherein one of the first and second substrates contains a through opening to expose the first surface of the first plate to the environment.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: April 8, 2014
    Assignee: Invensense, Inc.
    Inventors: Erhan Polatkan Ata, Martin Lim, Xiang Li, Stephen Lloyd, Michael Julian Daneman
  • Patent number: 8674460
    Abstract: In accordance with the disclosure, a MEMS substrate is provided that includes: a central planar portion configured to support a MEMS device; and a first electrical pad coplanar with the central planar portion, the first pad being connected to the central planar portion through a first flexure, wherein the first flexure is configured to substantially mechanically isolate the first electrical pad from the central planar portion.
    Type: Grant
    Filed: May 28, 2010
    Date of Patent: March 18, 2014
    Assignee: DigitalOptics Corporation MEMS
    Inventors: Roman C. Gutierrez, Robert J. Calvet
  • Patent number: 8659101
    Abstract: Provided is an inertial sensor device comprising a detection part having an MEMS structure, wherein convenience during sensor installation is ensured while erroneous operation caused by the application of external vibration is controlled. To achieve this objective, an anti-vibration structure (103) is provided in the inertial sensor device, between a semiconductor chip (102) mounted on a package substrate and a semiconductor chip (104) comprising a sensor detection part. The anti-vibration structure (103) has a structure in which the periphery of an anti-vibration part (103a) is surrounded by an anti-vibration part (103b) comprising a material having a larger Young's modulus.
    Type: Grant
    Filed: October 7, 2011
    Date of Patent: February 25, 2014
    Assignee: Hitachi Automotive Systems, Ltd.
    Inventors: Kiyoko Yamanaka, Kengo Suzuki, Kazunori Ohta, Heewon Jeong, Masahide Hayashi
  • Patent number: 8648429
    Abstract: In one embodiment, a semiconductor device includes a plurality of semiconductor chip stacks mounted on a substrate. Bonding terminals disposed on the substrate correspond to the chip stacks, such that at least one chip in each chip stack may be directly connected to a bonding terminal on the substrate and at least one chip in the chip stack is not directly connected to the bonding terminal. The semiconductor chip stacks may each act as one semiconductor device to the outside.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: February 11, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Uk-song Kang, Hoon Lee
  • Patent number: 8643129
    Abstract: A micro-electrical-mechanical device comprises: a transducer arrangement having at least a membrane being mounted with respect to a substrate; and electrical interface means for relating electrical signals to movement of the membrane; in which the transducer arrangement comprises stress alleviating formations which at least partially decouple the membrane from expansion or contraction of the substrate.
    Type: Grant
    Filed: March 20, 2007
    Date of Patent: February 4, 2014
    Assignee: Wolfson Microelectronics plc
    Inventors: Richard Ian Laming, Mark Begbie
  • Patent number: 8614491
    Abstract: A package assembly comprises a package base, a sensor die, an isolation plate, and a package interface plate. The isolation plate is bonded to the sensor die and has a plurality of flexible beams. Each flexible beam is configured to deflect under stress such that effects on the sensor die of a thermal mismatch between the package base and the sensor die are reduced. The package interface plate is bonded to the isolation plate and the package base. The package interface plate is configured to limit the maximum distance each flexible beam is able to deflect.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: December 24, 2013
    Assignee: Honeywell International Inc.
    Inventor: Max C. Glenn
  • Patent number: 8569850
    Abstract: A sensor for acoustic applications such as a silicone microphone is provided containing a backplate provided with apertures and a flexible diaphragm formed from a silicon on insulator (SOI) wafer which includes a layer of heavily doped silicon, a layer of silicon and an intermediate oxide layer that is connected to, and insulated from the backplate. The arrangement of the diaphragm in relation to the rest of the sensor and the sensor location, being mounted over the aperture in a PCB, reduces the acoustic signal pathway which allows the sensor to be both thinner and more importantly, enables there to be a greater back volume.
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: October 29, 2013
    Assignee: Sensfab Pte Ltd
    Inventors: Kitt-Wai Kok, Kok Meng Ong, Kathirgamasundaram Sooriakumar, Bryan Keith Patmon
  • Patent number: 8564075
    Abstract: An improved MEMS transducer apparatus and method. The apparatus has a movable base structure including an outer surface region and an inner surface region. At least one central anchor structure can be spatially disposed within a vicinity of the inner surface region and at least one peripheral anchor structure can be spatially disposed within a vicinity of the outer surface region. Additionally, the apparatus can have at least one peripheral spring structure. The peripheral spring structure(s) can be coupled to the peripheral anchor structure(s) and at least one portion of the outer surface region. The apparatus can also have at least one central spring structure. The central spring structure(s) can be operably coupled to the central anchor structure(s) and at least one portion of the inner surface region.
    Type: Grant
    Filed: April 19, 2011
    Date of Patent: October 22, 2013
    Assignee: mCube Inc.
    Inventor: Daniel N. Koury, Jr.
  • Patent number: 8563344
    Abstract: A method for producing microelectromechanical structures in a substrate includes: arranging at least one metal-plated layer on a main surface of the substrate in a structure pattern; leaving substrate webs open beneath a structure pattern region by introducing first trenches into the substrate perpendicular to a surface normal of the main surface in a region surrounding the structure pattern; coating the walls of the first trenches perpendicular to the surface normal of the main surface with a passivation layer; and introducing cavity structures into the substrate at the base of the first trenches in a region beneath the structure pattern region.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: October 22, 2013
    Assignee: Robert Bosch GmbH
    Inventors: Jochen Reinmuth, Heiko Stahl
  • Patent number: 8541861
    Abstract: According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: September 24, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaki Atsuta, Hideyuki Funaki, Keita Sasaki
  • Publication number: 20130241013
    Abstract: Provided is an inertial sensor device comprising a detection part having an MEMS structure, wherein convenience during sensor installation is ensured while erroneous operation caused by the application of external vibration is controlled. To achieve this objective, an anti-vibration structure (103) is provided in the inertial sensor device, between a semiconductor chip (102) mounted on a package substrate and a semiconductor chip (104) comprising a sensor detection part. The anti-vibration structure (103) has a structure in which the periphery of an anti-vibration part (103a) is surrounded by an anti-vibration part (103b) comprising a material having a larger Young's modulus.
    Type: Application
    Filed: October 7, 2011
    Publication date: September 19, 2013
    Applicant: Hitachi Automotive Systems, Ltd.
    Inventors: Kiyoko Yamanaka, Kengo Suzuki, Kazunori Ohta, Heewon Jeong, Masahide Hayashi
  • Publication number: 20130214370
    Abstract: A Micro-Electro-Mechanical System (MEMS) pressure sensor is disclosed, comprising a gauge wafer, comprising a micromachined structure comprising a membrane region and a pedestal region, wherein a first surface of the micromachined structure is configured to be exposed to a pressure medium that exerts a pressure resulting in a deflection of the membrane region. The gauge wafer also comprises a plurality of sensing elements patterned on the electrical insulation layer on a second surface in the membrane region, wherein a thermal expansion coefficient of the material of the sensing elements substantially matches with a thermal expansion coefficient of the material of the gauge wafer. The pressure sensor comprises a cap wafer coupled to the gauge wafer, which includes a recess on an inner surface of the cap wafer facing the gauge wafer that defines a sealed reference cavity that encloses and prevents exposure of the sensing elements to an external environment.
    Type: Application
    Filed: May 3, 2011
    Publication date: August 22, 2013
    Applicant: S3C, Inc.
    Inventors: Javed Hussain, Mohammad Yunus, James T. Suminto
  • Patent number: 8513747
    Abstract: An integrated MEMS device comprises a wafer where the wafer contains two or more cavities of different depths. The MEMS device includes one movable structure within a first cavity of a first depth and a second movable structure within a second cavity of a second depth. The cavities are sealed to maintain different pressures for the different movable structures for optimal operation. MEMS stops can be formed in the same multiple cavity depth processing flow. The MEMS device can be integrated with a CMOS wafer.
    Type: Grant
    Filed: December 11, 2012
    Date of Patent: August 20, 2013
    Assignee: Invensense, Inc.
    Inventors: Kegang Huang, Martin Lim, Steven S. Nasiri
  • Patent number: 8461656
    Abstract: A device structure is made using a first conductive layer over a first wafer. An isolated conductive region is formed in the first conductive layer surrounded by a first opening in the conductive layer. A second wafer has a first insulating layer and a conductive substrate, wherein the conductive substrate has a first major surface adjacent to the first insulating layer. The insulating layer is attached to the isolated conductive region. The conductive substrate is thinned to form a second conductive layer. A second opening is formed through the second conductive layer and the first insulating layer to the isolated conductive region. The second opening is filled with a conductive plug wherein the conductive plug contacts the isolated conductive region. The second conductive region is etched to form a movable finger over the isolated conductive region. A portion of the insulating layer under the movable finger is removed.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: June 11, 2013
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Woo Tae Park, Lisa H. Karlin, Lianjun Liu, Heinz Loreck, Hemant D. Desai
  • Patent number: 8450119
    Abstract: An MTJ MRAM cell is formed by using a reactive ion etch (RIE) to pattern an MTJ stack on which there has been formed a bilayer Ta/TaN hard mask. The hard mask is formed by patterning a masking layer that has been formed by depositing a layer of TaN over a layer of Ta on the MTJ stack. After the stack is patterned, the TaN layer serves at least two advantageous purposes: 1) it protects the Ta layer from oxidation during the etching of the stack and 2) it serves as a surface having excellent adhesion properties for a subsequently deposited dielectric layer.
    Type: Grant
    Filed: March 17, 2006
    Date of Patent: May 28, 2013
    Assignee: MagIC Technologies, Inc.
    Inventors: Chyu-Jiuh Torng, Wei Cao, Terry Ko
  • Patent number: 8395227
    Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
    Type: Grant
    Filed: January 6, 2012
    Date of Patent: March 12, 2013
    Assignee: Seiko Epson Corporation
    Inventors: Toru Watanabe, Akira Sato, Shogo Inaba, Takeshi Mori
  • Patent number: 8390084
    Abstract: The MEMS sensor according to the present invention includes a diaphragm.
    Type: Grant
    Filed: May 23, 2011
    Date of Patent: March 5, 2013
    Assignee: Rohm Co., Ltd.
    Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
  • Patent number: 8373240
    Abstract: A sensor device and method. One embodiment provides a first semiconductor chip having a sensing region. A porous structure element is attached to the first semiconductor chip. A first region of the porous structure element faces the sensing region of the first semiconductor chip. An encapsulation material partially encapsulates the first semiconductor chip and the porous structure element.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: February 12, 2013
    Assignee: Infineon Technologies AG
    Inventors: Klaus Elian, Georg Meyer-Berg, Horst Theuss
  • Publication number: 20130032906
    Abstract: A ferroelectric device comprises: a silicon substrate (a first substrate); a lower electrode (a first electrode) formed on one surface side of first substrate; a ferroelectric film formed on a surface of lower electrode opposite to first substrate side; and an upper electrode (a second electrode) formed on a surface of ferroelectric film opposite to lower electrode side. The ferroelectric film is formed of a ferroelectric material with a lattice constant difference from silicon. The ferroelectric device further comprises a shock absorbing layer formed of a material with better lattice matching with ferroelectric film than silicon and provided directly below the lower electrode. The first substrate is provided with a cavity that exposes a surface of shock absorbing layer opposite to lower electrode side.
    Type: Application
    Filed: April 18, 2011
    Publication date: February 7, 2013
    Applicant: PANASONIC CORPORATION
    Inventors: Junya Ogawa, Norihiro Yamauchi, Tomoaki Matsushima, Koichi Aizawa
  • Patent number: 8350345
    Abstract: Some embodiments provide force input control devices for sensing vector forces comprising: a sensor die comprising: a rigid island, an elastic element coupled to the rigid island, die frame coupled to a periphery of the elastic element, one or more stress sensitive components on the elastic element, and signal processing IC, where the sensor die is sensitive to a magnitude and a direction of a force applied to the rigid island within the sensor die, where the sensor die is coupled electrically and mechanically to a substrate, a spring element coupling an external button, where the force is applied, to the rigid island element, wherein the spring element has a flat geometry and located in a plane parallel to a plane of the substrate, where the spring element is configured to translate a deflection of the button into an allowable force applied to the rigid island.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: January 8, 2013
    Inventor: Vladimir Vaganov
  • Patent number: 8324007
    Abstract: A method manufactures an electronic device comprising a MEMS device overmolded in a protective casing. The MEMS device includes an active surface wherein a portion of the MEMS device is integrated, and is sensitive, through a membrane, to chemical/physical variations of a fluid. Prior to the molding step, at least one resin layer is formed on at least one region overlying the active surface in correspondence with the membrane. After, at least one portion of at least one resin layer is removed from at least one region, so that in the region an opening is formed, through which the MEMS device is activated from the outside of the protective casing.
    Type: Grant
    Filed: August 2, 2010
    Date of Patent: December 4, 2012
    Assignee: STMicroelectronics S.r.l.
    Inventors: Federico Giovanni Ziglioli, Mark Andrew Shaw
  • Patent number: 8258591
    Abstract: The present invention provides a MEMS device, be implemented on many MEMS device, such as MEMS microphone, MEMS speaker, MEMS accelerometer, MEMS gyroscope. The MEMS device includes a substrate. A dielectric structural layer is disposed over the substrate, wherein the dielectric structural layer has an opening to expose the substrate. A diaphragm layer is disposed over the dielectric structural layer, wherein the diaphragm layer covers the opening of the dielectric structural layer to form a chamber. A conductive electrode structure is adapted in the diaphragm layer and the substrate to store nonvolatile charges.
    Type: Grant
    Filed: January 16, 2008
    Date of Patent: September 4, 2012
    Assignee: Solid State System Co., Ltd.
    Inventors: Chien-Hsing Lee, Tsung-Min Hsieh