Means To Reduce Sensitivity To Physical Deformation Patents (Class 257/420)
  • Patent number: 8258590
    Abstract: A method for producing a component, especially a micromechanical, micro-electro-mechanical or micro-opto-electro-mechanical component, as well as such a component which has an active structure that is embedded in a layer structure. Strip conductor bridges are formed by etching first and second depressions having a first and second, different etching depth into a covering layer of a first layer combination that additionally encompasses a substrate and an insulation layer. The deeper depression is used for insulating the strip conductor bridge while the shallower depression provides a moving space for the active structure with the moving space being bridged by the strip conductor bridge.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: September 4, 2012
    Assignee: Northrop Grumman LITEF GmbH
    Inventors: Wolfram Geiger, Uwe Breng
  • Patent number: 8188556
    Abstract: A semiconductor sensor has a first semiconductor layer as a base, an insulating layer formed on the first semiconductor layer, and a second semiconductor layer formed on the insulating layer. A recess is formed from a bottom surface of the first semiconductor layer up to a top surface of the insulating layer. The second semiconductor layer is covered with the insulating layer in an outer circumference of a top surface of the recess. A sensitive region of the second semiconductor layer is exposed in a region except the outer circumference of the top surface of the recess.
    Type: Grant
    Filed: February 25, 2010
    Date of Patent: May 29, 2012
    Assignee: OMRON Corporation
    Inventors: Yoshitaka Adachi, Katsuyuki Inoue
  • Patent number: 8125039
    Abstract: One-time programmable, non-volatile field effect devices and methods of making same. Under one embodiment, a one-time-programmable, non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate has a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically coupled to one of the source, drain and gate and has an electromechanically-deflectable nanotube element that is positioned to be deflectable in response to electrical stimulation to form a non-volatile closed electrical state between the one of the source, drain and gate and its corresponding terminal.
    Type: Grant
    Filed: January 9, 2007
    Date of Patent: February 28, 2012
    Assignee: Nantero Inc.
    Inventors: Claude L. Bertin, Thomas Rueckes, Brent M. Segal, Bernhard Vogeli, Darren K. Brock, Venkatachalam C. Jaiprakash
  • Patent number: 8120125
    Abstract: Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.
    Type: Grant
    Filed: January 24, 2011
    Date of Patent: February 21, 2012
    Assignee: QUALCOMM MEMS Technologies, Inc.
    Inventors: Teruo Sasagawa, SuryaPrakash Ganti, Mark W. Miles, Clarence Chui, Manish Kothari, Ming-Hau Tung
  • Patent number: 8115266
    Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: February 14, 2012
    Assignee: Seiko Epson Corporation
    Inventors: Toru Watanabe, Akira Sato, Shogo Inaba, Takeshi Mori
  • Patent number: 8039912
    Abstract: Anchor systems and methods anchor components of a Micro-Electro-Mechanical Systems (MEMS) device to a substrate. An exemplary embodiment has a trace anchor bonded to a substrate, a device anchor bonded to the substrate, and an anchor flexure configured flexibly couple the trace anchor and the device anchor to substantially prevent transmission of a stress induced in the trace anchor from being transmitted to the device anchor.
    Type: Grant
    Filed: June 25, 2008
    Date of Patent: October 18, 2011
    Assignee: Honeywell International Inc.
    Inventors: Michael Foster, Mark Williams, Mark Eskridge
  • Patent number: 8039911
    Abstract: The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1): (A2/A1)/(B2/B1)?1??(1) A2: maximum vibrational amplitude of the diaphragm in a case of working a physical quantity of a prescribed value on the diaphragm A1: maximum vibrational amplitude of the diaphragm in a case of working the physical quantity on the diaphragm in an omitting structure obtained by omitting one of the supporting portions from the diaphragm B2: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm B1: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm in the omitting structure.
    Type: Grant
    Filed: June 16, 2009
    Date of Patent: October 18, 2011
    Assignee: Rohm Co., Ltd.
    Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
  • Patent number: 8035176
    Abstract: Provided are a Micro Electro-Mechanical System (MEMS) package and a method of packaging the MEMS package. The MEMS package includes: a MEMS device including MEMS structures formed on a substrate, first pad electrodes driving the MEMS structures, first sealing parts formed at an edge of the substrate, and connectors formed on the first pad electrodes and the first sealing parts; and a MEMS driving electronic device including second pad electrodes and second sealing parts respectively corresponding to the first pad electrodes and the first sealing parts to be sealed with and bonded to the MEMS device through the connectors to form an air gap having a predetermined width.
    Type: Grant
    Filed: July 25, 2007
    Date of Patent: October 11, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sung-Hae Jung, Myung-Lae Lee, Gunn Hwang, Chang-Kyu Kim, Chang-Han Je, Chang-Auck Choi
  • Patent number: 8030690
    Abstract: The invention relates to a detection device using at least one transistor (2) with a vertical channel, comprising a mechanical structure (14), free to move relative to the transistor, in a plane containing the transistor drain (10), source (8) and channel (12).
    Type: Grant
    Filed: May 16, 2007
    Date of Patent: October 4, 2011
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Eric Ollier, Laurent Duraffourg, Philippe Andreucci
  • Patent number: 7989905
    Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
    Type: Grant
    Filed: December 30, 2010
    Date of Patent: August 2, 2011
    Assignee: Seiko Epson Corporation
    Inventors: Toru Watanabe, Akira Sato, Shogo Inaba, Takeshi Mori
  • Patent number: 7973373
    Abstract: A microminiature moving device has disposed on a single-crystal silicon substrate movable elements such as a movable rod and a movable comb electrode that are displaceable in parallel to the substrate surface and stationary parts that are fixedly secured to the single -crystal silicon substrate with an insulating layer sandwiched between. Depressions are formed in the surface regions of the single-crystal silicon substrate where no stationary parts are present and the movable parts are positioned above the depressions. The depressions form gaps large enough to prevent foreign bodies from causing shorts and malfunctioning of the movable parts.
    Type: Grant
    Filed: December 1, 2008
    Date of Patent: July 5, 2011
    Assignee: Japan Aviation Electronics Industry Limited
    Inventors: Keiichi Mori, Yoshichika Kato, Satoshi Yoshida, Kenji Kondou, Yoshihiko Hamada, Osamu Imaki
  • Patent number: 7944007
    Abstract: In some embodiments, an actuator assembly is provided which includes actuators, having a storage material, a volume changing material comprising a metal capable of changing volume in response to species insertion and removal, an ion transport material between the storage material and the volume changing material, and electrodes connected so as to be capable of providing an actuation voltage to the plurality of actuators. The actuators are configured such that the actuator assembly provides substantially anisotropic movement. In some embodiments, the actuator assembly includes actuators arranged in a stacked configuration. In some embodiments, the volume changing material includes spaced apart elongated structures which may be recessed within the storage material.
    Type: Grant
    Filed: November 3, 2007
    Date of Patent: May 17, 2011
    Assignee: HRL Laboratories, LLC
    Inventors: Ping Liu, Cameron Massey, Leslie Momoda, Geoffrey McKnight, William Barvosa-Carter, Alan Jacobsen
  • Patent number: 7939899
    Abstract: In one embodiment, a solid state actuator is provided which includes a pair of electrodes and a solid state storage material having a plating material. A solid state ion transport material is adjacent the solid state storage material such that the solid state storage material is located between an anode of the pair of electrodes and the solid state ion transport material. The pair of electrodes are connected so as to be capable of providing an actuation voltage across the solid state storage material to provide transport of plating material cations through the solid state ion transport material between the solid state storage material and a cathode electrode of the pair of electrodes.
    Type: Grant
    Filed: October 20, 2007
    Date of Patent: May 10, 2011
    Assignee: HRL Laboratories, LLC
    Inventors: Ping Liu, Cameron Massey, Leslie Momoda, Geoffrey McKnight, William Barvosa-Carter, Alan Jacobsen
  • Patent number: 7923792
    Abstract: An MEMS sensor constructed on a base chip and having a capacitive mode of operation is disclosed. The MEMS sensor has a patterned layer construction applied on the base chip. A cutout is produced in the layer construction, the moveable electrode, for example a membrane, being arranged in said cutout. The cutout is spanned by a covering layer, which bears on the layer construction around the cutout and comprises the back electrode.
    Type: Grant
    Filed: January 10, 2007
    Date of Patent: April 12, 2011
    Assignee: austruamicrosystems AG
    Inventor: Franz Schrank
  • Patent number: 7915696
    Abstract: An electrical through-connection, or via, that passes through a substrate to a bus on a first surface of the substrate. The via may be configured with an interlock such that the electrically conductive core of the via is constrained to thermally expand towards the second surface, away from the bus, thus preventing damage to the bus. The interlock may be a local constriction or enlargement of the via near the first surface of the substrate. The via may be greater in length along the bus than a unit spacing of beams in a parallel microswitch array actuated in unison along the bus. The via may be narrower in width than in length, and may form a trapezoidal geometry that is larger at the second surface of the substrate than at the first surface.
    Type: Grant
    Filed: October 24, 2007
    Date of Patent: March 29, 2011
    Assignee: General Electric Company
    Inventors: David Cecil Hays, Marco Francesco Aimi, Christopher Fred Keimel, Glenn Scott Claydon, Kanakasabapathi Subramanian, Oliver Charles Boomhower
  • Patent number: 7915698
    Abstract: The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses on the base substrate that become larger from a central portion of the base substrate towards a peripheral portion when growing a nitride semiconductor film. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.
    Type: Grant
    Filed: December 14, 2007
    Date of Patent: March 29, 2011
    Assignee: Siltron, Inc.
    Inventors: Doo-Soo Kim, Ho-Jun Lee, Yong-Jin Kim, Dong-Kun Lee
  • Patent number: 7884431
    Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
    Type: Grant
    Filed: February 23, 2010
    Date of Patent: February 8, 2011
    Assignee: Seiko Epson Corporation
    Inventors: Toru Watanabe, Akira Sato, Shogo Inaba, Takeshi Mori
  • Patent number: 7872320
    Abstract: The present invention improves mechanical strength of a micro-electro-mechanical device (MEMS) having a movable portion to improve reliability. In a micro-electro-mechanical device (MEMS) having a movable portion, a portion which has been a hollow portion in the case of a conventional structure is filled with a filler material. As the filler material, a block copolymer that is highly flexible is used, for example. By filling the hollow portion, mechanical strength improves. Besides, warpage of an upper portion of a structure body in the manufacture process is prevented, whereby yield improves. A micro-electro-mechanical device thus manufactured is highly reliable.
    Type: Grant
    Filed: November 5, 2008
    Date of Patent: January 18, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kaoru Tsuchiya, Takafumi Mizoguchi
  • Patent number: 7851876
    Abstract: Embodiments of a micro electro mechanical system are disclosed.
    Type: Grant
    Filed: October 20, 2006
    Date of Patent: December 14, 2010
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Sriram Ramamoorthi, Donald J. Milligan
  • Patent number: 7821085
    Abstract: A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.
    Type: Grant
    Filed: April 21, 2009
    Date of Patent: October 26, 2010
    Assignee: Denso Corporation
    Inventors: Shigenori Suzuki, Hisanori Yokura, Kenichi Yokoyama, Tetsuo Fujii, Kazuhiko Sugiura
  • Patent number: 7812410
    Abstract: A microelectronic device, including at least one transistor including: on a substrate, a semiconductor zone with a channel zone covered with a gate dielectric zone, a mobile gate, suspended above the gate dielectric zone and separated from the gate dielectric zone by an empty space, which the gate is located at an adjustable distance from the gate dielectric zone, and a piezoelectric actuation device including a stack formed by at least one layer of piezoelectric material resting on a first biasing electrode, and a second biasing electrode resting on the piezoelectric material layer, wherein the gate is attached to the first biasing electrode and is in contact with the first biasing electrode, and the piezoelectric actuation device is configured to move the gate with respect to the channel zone.
    Type: Grant
    Filed: July 7, 2008
    Date of Patent: October 12, 2010
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Michael Collonge, Maud Vinet, Olivier Thomas
  • Patent number: 7811849
    Abstract: A method for fabricating a micro-electro-mechanical system (MEMS) device. The method comprises placing a guiding mask on an application platform, the guiding mask including an opening that defines the position of a MEMS part to be placed on the application platform. The method further comprises placing the MEMS part into the opening of the guiding mask on the application platform, and removing the guiding mask from the application platform after the MEMS part is bonded to the application platform.
    Type: Grant
    Filed: January 30, 2008
    Date of Patent: October 12, 2010
    Assignee: WinMEMS Technologies Co., Ltd.
    Inventor: Tseng-Yang Hsu
  • Publication number: 20100252899
    Abstract: A package assembly comprises a package base, a sensor die, an isolation plate, and a package interface plate. The isolation plate is bonded to the sensor die and has a plurality of flexible beams. Each flexible beam is configured to deflect under stress such that effects on the sensor die of a thermal mismatch between the package base and the sensor die are reduced. The package interface plate is bonded to the isolation plate and the package base. The package interface plate is configured to limit the maximum distance each flexible beam is able to deflect.
    Type: Application
    Filed: March 30, 2010
    Publication date: October 7, 2010
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventor: Max C. Glenn
  • Patent number: 7800190
    Abstract: A microelectromechanical system (MEMS) hermetically sealed package device that is less labor intensive to construct and thus less expensive to manufacture. An example package device includes a package having a bottom section and a lid. A MEMS die includes upper and lower plates made in accordance with upper sense plate design. The MEMS die is mounted to the bottom section. The upper and lower plates form a cavity that receives a MEMS device. The upper and lower plates are bonded by one or more bond pads and a seal ring that surrounds the cavity. The seal ring includes grooves that allow exposure of the cavity to the space within the package. A getter material applied to a top surface of the MEMS die on the upper plate. The getter material is activated during or after the lid is mounted to the bottom section.
    Type: Grant
    Filed: June 16, 2008
    Date of Patent: September 21, 2010
    Assignee: Honeywell International Inc.
    Inventors: Bryan Seppala, Jon DCamp, Max Glenn
  • Patent number: 7795692
    Abstract: A resonator including a substrate, and a resonating unit having an active region that causes resonances and a non-active region that does not cause resonances, and having a first electrode, a piezoelectric film, and a second electrode layered in turn on the substrate. At least one of the first and the second electrodes is formed, so that at least a portion of a non-active region portion thereof has a thickness different from that of an active region portion thereof.
    Type: Grant
    Filed: January 25, 2007
    Date of Patent: September 14, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joo-ho Lee, Hae-seok Park, Sang-hun Lee, Duck-hwan Kim, Sang-chul Sul
  • Patent number: 7785905
    Abstract: The present invention relates to dielectric actuators or sensors of the kind wherein electrostatic attraction between two electrodes located on an elastomeric body leads to a compression of the body in a first direction and a corresponding extension of the body in a second direction. The dielectric actuator/sensor structure comprises a first sheet of elastomeric material having at least one smooth surface and a second surface and a second sheet of elastomeric material having at least one smooth surface and a second surface. The sheets are laminated together with their second surfaces exposed, and there is provided a first electrode on the second surface of the first sheet and second electrode on the second surface of the second sheet.
    Type: Grant
    Filed: October 9, 2007
    Date of Patent: August 31, 2010
    Assignee: Danfoss A/S
    Inventors: Mohamed Yahia Benslimane, Peter Gravesen
  • Patent number: 7768821
    Abstract: The present application relates to a non-volatile random-access memory cell equipped with a suspended mobile gate and with piezoelectric means for operating the gate.
    Type: Grant
    Filed: July 8, 2008
    Date of Patent: August 3, 2010
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Olivier Thomas, Michael Collonge, Maud Vinet
  • Patent number: 7759749
    Abstract: When metallic material is employed for various metallic films, it is possible to improve at least one of the mechanical strength, the durability against abrasion, and the uniformess as a film while keeping unchanged the chemical property and the electric property of the metallic material. Due to the gel three-dimensional mesh structure 406, the dislocations 407 of the tangle in the mesh form are introduced in the crystal of the metal 401 at high density; therefore, when the tensile stress 403 is applied thereto, these dislocations slightly shift. As a result, the metal 401 deforms by uniformly dispersing distortion in the order of crystal grains, and hence there does not occur concentration of stress, which leads to the breakage or the severance at the grain interface 402. Therefore, the metallic material of the present invention improves the mechanical strength and the durability against abrasion.
    Type: Grant
    Filed: February 7, 2006
    Date of Patent: July 20, 2010
    Assignee: NEC Corporation
    Inventor: Akio Tanikawa
  • Patent number: 7723810
    Abstract: To reduce cross-talk between adjacent hot electrodes, the present invention provides a ground plane, which extends beneath each side of a MEMS mirror platform covering opposite edges of a hot electrode along each side thereof. The ground plane includes an overhang section extending between the mirror platform and the hot electrode forming a first gap between the hot electrode and the overhang section, and a second gap between the overhang section and the mirror platform. The method of the present invention enables highly accurate construction using lithographic patterning and deep reactive ion etching (DRIE).
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: May 25, 2010
    Assignee: JDS Uniphase Corporation
    Inventors: John Michael Miller, Steven Harold Moffat
  • Patent number: 7718458
    Abstract: A method and resulting device for reducing an electrical field at an isolation gap in a capacitive actuator includes providing a bottom electrode layer and forming a pattern in the bottom electrode layer having an isolation gap between center and outer electrode components of the patterned electrode. A spacing material is deposited in the isolation gap, the spacing material having a greater height than a remainder of the patterned electrode, and a sacrificial material is deposited conformably on a surface of the patterned electrode and spacing material. The method also includes applying a deformable electrode to a surface of the sacrificial material, whereby removal of the sacrificial and spacing materials results in a greater spacing between the deformable electrode and the electrode layer at a region of the isolation gap than over a remainder of the spacing between the patterned electrode layer and deformable surface.
    Type: Grant
    Filed: September 11, 2007
    Date of Patent: May 18, 2010
    Assignee: Xerox Corporation
    Inventors: Peter M. Gulvin, Donald J. Drake
  • Patent number: 7705411
    Abstract: The bow in a wafer that results from fabricating a large number of MEMS devices on the top surface of the passivation layer of the wafer so that a MEMS device is formed over each die region is reduced by forming a stress relief layer between the passivation layer and the MEMS devices.
    Type: Grant
    Filed: April 9, 2008
    Date of Patent: April 27, 2010
    Assignee: National Semiconductor Corporation
    Inventors: Peter Smeys, Peter Johnson
  • Patent number: 7705413
    Abstract: A micromechanical component, in particular a micromechanical sensor, having a first wafer and a second wafer is provided, the first wafer having at least one structural element, and the second wafer having at least one mating structural element, and, in addition, the structural element and the mating structural element are designed in such a way that a relative displacement of the first wafer relative to the second wafer parallel to a main extension plane of the first wafer essentially leads to compressive loading or tensile loading between the structural element and the mating structural element.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: April 27, 2010
    Assignee: Robert Bosch GmbH
    Inventors: Heribert Weber, Ralf Hausner
  • Patent number: 7696587
    Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
    Type: Grant
    Filed: October 22, 2007
    Date of Patent: April 13, 2010
    Assignee: Seiko Epson Corporation
    Inventors: Toru Watanabe, Akira Sato, Shogo Inaba, Takeshi Mori
  • Patent number: 7683429
    Abstract: A microstructure which forms a micromachine is formed by using a silicon wafer as a mainstream, conventionally. In view of this, the invention provides a manufacturing method of a micromachine in which a microstructure is formed over an insulating substrate. The invention provides a micromachine including a layer containing polycrystalline silicon which is crystallized by thermal crystallization or laser crystallization using a metal element and including a space over or under the layer. Such polycrystalline silicon can be formed over an insulating surface and has high strength, therefore, it can be used as a microstructure as well. As a result, a microstructure formed over an insulating substrate or a micromachine provided with a microstructure can be provided.
    Type: Grant
    Filed: May 25, 2006
    Date of Patent: March 23, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi
  • Patent number: 7679151
    Abstract: In a method for manufacturing a micromechanical device having a region for forming an integrated circuit, at first a first layer is produced on a deeper-lying part in the substrate. Subsequently, a membrane layer is produced on the first layer and at least one channel completely penetrating the membrane layer is introduced in the membrane layer. After that, a region of the first layer below the membrane layer is removed to form a cavity. Finally, the channel is sealed and a planar surface is formed.
    Type: Grant
    Filed: January 30, 2007
    Date of Patent: March 16, 2010
    Assignee: Infineon Technologies AG
    Inventors: Karlheinz Mueller, Bernhard Winkler
  • Patent number: 7663911
    Abstract: Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node.
    Type: Grant
    Filed: October 30, 2007
    Date of Patent: February 16, 2010
    Assignee: Nantero, Inc.
    Inventors: Claude L. Bertin, Thomas Rueckes, Brent M. Segal
  • Patent number: 7635901
    Abstract: The microcavity is delineated by a cover which is formed on a sacrificial layer and in which at least one hole is formed for removal of the sacrificial layer. A plug covers the hole and part of the cover along the periphery of the hole. The plug is made from a material that can undergo creep deformation and can be a polymerized material, in particular selected from photoresists and polyimide, or glass, in particular selected from phosphosilicate glasses. A sealing layer is deposited on the plug and the cover such as to seal the microcavity hermetically. The hole has, for example, a dimension of less than 5 micrometers and is preferably arranged on the highest part of the microcavity. The plug can have a thickness of between 2 and 6 micrometers.
    Type: Grant
    Filed: December 13, 2004
    Date of Patent: December 22, 2009
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Philippe Robert
  • Patent number: 7627943
    Abstract: A method of manufacturing a pressure sensor is provided whereby the pressure sensor includes a joint, a diaphragm, and an adapter disposed between the joint and the diaphragm. The adapter includes an axis portion and a flange projecting in a radial direction from the axis portion. The axis portion is disposed such that one end does not interfere with the joint and the other end is welded to the diaphragm. The diaphragm is welded to the adapter and the welded portion the welded portion is positioned on an inner side of an end face of the joint. The joint is caulked to a peripheral edge of the flange of the adapter.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: December 8, 2009
    Assignee: Nagano Keiki Co., Ltd.
    Inventors: Shuji Tohyama, Takayuki Yokoyama, Ikuya Miyahara
  • Patent number: 7586165
    Abstract: A microelectromechanical system (MEMS) device may include a substrate and at least one movable member supported by the substrate. The at least one movable member may include a superlattice including a plurality of stacked groups of layers with each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
    Type: Grant
    Filed: May 31, 2006
    Date of Patent: September 8, 2009
    Assignee: MEARS Technologies, Inc.
    Inventor: Richard A. Blanchard
  • Patent number: 7579662
    Abstract: The resonator comprises two capacitively coupled electrodes. One of the electrodes is made of a p-type doped semiconductor material, whereas the other electrode is made of an n-type doped semiconductor material. The invention also comprises a method of using this specific selection of the doping for enhancing the output signal current from a resonator.
    Type: Grant
    Filed: October 17, 2006
    Date of Patent: August 25, 2009
    Assignee: Seiko Epson Corporation
    Inventor: Kazuaki Tanaka
  • Patent number: 7579663
    Abstract: A system and method for manufacturing micro cavity packaging enclosure at the wafer level using MEMS (MicroElectroMechanical Systems) process, wherein micro cavities are formed from epoxy-bonded single-crystalline silicon wafer as its cap, epoxy and deposited metal or insulator as at least part of its sidewall, on substrate wafers.
    Type: Grant
    Filed: February 11, 2008
    Date of Patent: August 25, 2009
    Inventor: Chang-Feng Wan
  • Patent number: 7554136
    Abstract: A micro device that is manufactured by semiconductor process and is electrically connected to outside for its operation. The micro device includes a circuit board, an electrode pad being provided on the circuit board, a lead substrate being provided substantially parallel to the circuit board, and a lead of conductive member being electrically connected to the electrode pad by being bent in a direction away from a surface of the lead substrate, one end of the lead being adhered to the lead substrate and the other end being a free end.
    Type: Grant
    Filed: March 11, 2005
    Date of Patent: June 30, 2009
    Assignee: Advantest Corporation
    Inventors: Fumikazu Takayanagi, Yoshiaki Moro, Hirokazu Sanpei
  • Patent number: 7400514
    Abstract: The invention relates to electronic sensors comprising an electromechanical microsensor cell such as a micro-accelerometer, and it more particularly relates to the way in which the microsensor cell per se is mounted in a package that furthermore comprises a printed circuit board carrying the electronic processing circuits associated with the microsensor cell. In order to establish a non-rigid electrical connection between a conductive terminal of the board and a connection pin of the cell, a narrow strip-shaped conductive connection cut by chemical machining from a thin and flexible metal sheet (CuBe) is soldered. The strip comprises at least one circle-arc segment extending over one half-turn or three-fourths of a turn. Its resilience permits very low stiffness in all directions and therefore prevents any transmission of vibrations or shocks to the cell. The manufacture of the connections may be collective for all the connections of a sensor and for successive sensors manufactured serially.
    Type: Grant
    Filed: October 27, 2004
    Date of Patent: July 15, 2008
    Assignee: Thales
    Inventors: Philippe Guichard, Jean-Louis Le Corre, Jean-Marie Odermath, Jérôme Inglese
  • Publication number: 20080164546
    Abstract: A micro-electromechanical device comprises a micro-electromechanical die, a package, and three pillars attaching the micro-electromechanical die to the package, at least one of the shape, position and orientation of the pillars is configured such that any strain transferred from the package to the die by deformation of the package is minimized.
    Type: Application
    Filed: January 10, 2008
    Publication date: July 10, 2008
    Applicant: INFINEON TECHNOLOGIES SENSONOR AS
    Inventors: Terje Kvisteroy, Eskild Westby
  • Patent number: 7358579
    Abstract: A microelectromechanical system switch may include a relatively stiff cantilevered beam coupled, on its free end, to a more compliant or flexible extension. A contact may be positioned at the free end of the cantilevered beam. The extension reduces the actuation voltage that is needed and compensates for the relative stiffness of the cantilevered beam in closing the switch. In opening the switch, the stiffness of the cantilevered beam may advantageously enable quicker operation which may be desirable in higher frequency situations.
    Type: Grant
    Filed: June 28, 2002
    Date of Patent: April 15, 2008
    Assignee: Intel Corporation
    Inventors: Qing Ma, Tsung-Kuan Allen Chou, Valluri Rao
  • Patent number: 7304358
    Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conductive gate beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on each side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the gate beam when said beam is in maximum deflection towards the channel area.
    Type: Grant
    Filed: September 15, 2005
    Date of Patent: December 4, 2007
    Assignees: STMicroelectronics S.A., Commissariat a l'Energie Atomique
    Inventors: Pascal Ancey, Nicolas Abele, Fabrice Casset
  • Patent number: 7301801
    Abstract: Apparatus and methods for optimizing a toggle window for a magnetic tunnel junction (MTJ) having a multicomponent free layer are provided. In accordance with an aspect of the invention, a MTJ comprises a free layer, a pinned layer, and a barrier layer formed between the free layer and the pinned layer. The free layer, in turn, includes a plurality of free magnetic sublayers while the pinned layer includes a plurality of pinned magnetic sublayers. Each of the pinned magnetic sublayers exerts a magnetic field on the free magnetic sublayers. To optimize the toggle window for the device, the dimensions of each of the pinned magnetic sublayers are selected to substantially equalize average magnetic fields acting on each of the free magnetic sublayers.
    Type: Grant
    Filed: October 28, 2005
    Date of Patent: November 27, 2007
    Assignee: International Business Machines Corporation
    Inventors: David W. Abraham, Daniel Christopher Worledge
  • Patent number: 7298017
    Abstract: In one embodiment, a solid state actuator is provided having a solid state lithium storage material and a solid state volume changing material having a metal capable of changing volume in response to lithium insertion and removal. A solid state lithium ion transport material is located between the lithium storage material and the volume changing material. A pair of electrodes are connected so as to be capable of providing an actuation voltage across the lithium storage material and the volume changing material. In some embodiments, the volume changing material has active material particles comprised of metal contained in an inactive matrix. The active material particles may be aligned so that when the active material particles expand the volume changing material expands substantially in one direction. In some embodiments the volume changing material is a metal alloy and the lithium transport material is a high stiffness material. In some embodiments, multiple actuators are stacked, interleaved, or pillared.
    Type: Grant
    Filed: August 28, 2004
    Date of Patent: November 20, 2007
    Assignee: HRL Laboratories, LLC
    Inventors: Ping Liu, Cameron Massey, Leslie Momoda, Geoffrey McKnight, William Barvosa-Carter, Alan Jacobsen
  • Patent number: 7298014
    Abstract: A system and method for reducing rectification error in a MEMS device cause by noise and/or vibration. A visco-elastic polymer is situated around at least part of the MEMs device, wherein the visco-elastic polymer converts at least some of the acoustic and/or vibration energy into heat, thereby reducing effects of the external acoustic and/or vibration energy on the MEMS device.
    Type: Grant
    Filed: December 3, 2004
    Date of Patent: November 20, 2007
    Assignee: Honeywell International Inc.
    Inventor: Miguel C. Diaz
  • Patent number: 7289357
    Abstract: Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element.
    Type: Grant
    Filed: August 13, 2004
    Date of Patent: October 30, 2007
    Assignee: Nantero, Inc.
    Inventors: Claude L. Bertin, Thomas Rueckes, Brent M. Segal