Abstract: Methods for forming a string of memory cells, an apparatus having a string of memory cells, and a system are disclosed. A method for forming the string of memory cells comprises forming a metal silicide source material over a substrate. The metal silicide source material is doped. A vertical string of memory cells is formed over the metal silicide source material. A semiconductor material is formed vertically and adjacent to the vertical string of memory cells and coupled to the metal silicide source material.

Abstract: A single photon avalanche diode includes a silicon-on-insulator (SOI) substrate having a base substrate, a buried oxide layer over the base substrate, and a silicon layer over the buried oxide layer. At least one photodiode region is disposed in the base substrate. The photodiode region comprises an epitaxial layer embedded in the base substrate.

Abstract: This disclosure provides a semiconductor sensor of ionizing radiation and/or ionizing particles with a backside bias electrode and a backside junction for completely depleting the semiconductor substrate up to carrier collection regions each connected to a respective collection electrode of carriers generated by ionization in the substrate. Differently from prior sensors, the sensor of this disclosure has an intermediate semiconductor layer formed upon the substrate, having a greater doping concentration than the doping concentration of the substrate and a doping of a same type. In this intermediate layer, buried doped regions of opposite type one separated from the other are formed for shielding superficial regions in which readout circuits are defined.

Abstract: Disclosed herein is an X-ray imaging system suitable for detecting x-ray, comprising: a first X-ray detector, and a second X-ray detector; wherein the first X-ray detector is configured to move relative to the second X-ray detector; wherein a spatial resolution of the first X-ray detector is higher than a spatial resolution of the second X-ray detector; wherein a detection area of the first X-ray detector is smaller than a detection area of the second X-ray detector. Also described herein is a method of X-ray imaging using the X-ray imaging system.

Abstract: A quantum device includes: a substrate; and at least three co-planar structures arranged on a surface of the substrate, each co-planar structure, of the at least three co-planar structures, including a superconductor, in which a first effective dielectric constant between a first co-planar structure and a second co-planar structure that is a nearest neighbor to the first co-planar structure is above a first threshold, a second effective dielectric constant between the first co-planar structure and a third co-planar structure that is a next nearest neighbor to the first so-planar structure is less than a second threshold, and the second threshold is less than the first threshold.

Abstract: Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the energy of photons meant to be detected.

Abstract: There is provided an x-ray sensor (21) comprising an active detector region including a plurality of detector diodes (22) at a first side of the sensor, and a common junction termination (23) at a second opposite side of the sensor. Normally, this implies that the junction termination (23) is moved from the top side where the active detector area is located to the bottom side of the sensor, allowing for full utilization of the active detector area at the top side with detector diodes to the very edge of the sensor.

Abstract: A photodiode contains an absorption portion, wherein the absorption portion contains a sheath, containing at least two charge extraction regions; and a core surrounded at least partially by the sheath. The core contains a plurality of patterns formed from a first material which generates, by absorption of photons, free electrical charge carriers and a confinement layer inside of which the patterns are located. Moreover, the patterns are arranged periodically along a main extension direction De (z) of the core, by having a pitch p.

Abstract: An electronic device is proposed. The electronic device comprises: at least one electronic component formed in a chip of semiconductor material; at least one radioisotope power source unit comprising a radioactive material. The at least one radioisotope power source unit is embedded in the chip of semiconductor material together with the at least one electronic component. Moreover, the at least one radioisotope power source unit is arranged for providing electric power to said at least one electronic component by absorbing particles emitted by said radioactive material comprised in the least one radioisotope power source unit.

Abstract: The present disclosure discloses, in one arrangement, a scintillator material made of a metal halide with one or more additional group-13 elements. An example of such a compound is Ce:LaBr3 with thallium (Tl) added, either as a codopant or in a stoichiometric admixture and/or solid solution between LaBr3 and TlBr. In another arrangement, the above single crystalline iodide scintillator material can be made by first synthesizing a compound of the above composition and then forming a single crystal from the synthesized compound by, for example, the Vertical Gradient Freeze method. Applications of the scintillator materials include radiation detectors and their use in medical and security imaging.

Abstract: A method for manufacturing a semiconductor element comprising a single photon avalanche diode having a multiplication zone (AR) a guard ring structure with a second type of electrical conductivity comprises providing a semiconductor wafer with a first region (R) comprising a semiconductor material with the first type of conductivity. The method further comprises generating by a first doping process a first well (W1) of the guard ring structure having a first vertical depth, the first well (W1) laterally surrounding the multiplication zone (AR) and having a lateral distance (A) from the multiplication zone (AR). The method further comprises generating by a second doping process a second well (W2) of the guard ring structure having a second vertical depth, the second well (W2) laterally surrounding and adjoining a part of the first region for laterally defining the multiplication zone (AR).

Abstract: A low-power wireless ionizing radiation measurement system is provided that is intended to be used in a wearable dosimeter for occupational radiation monitoring.

Abstract: The invention relates to a single-photon avalanche diode (SPAD) photodiode having a layer made of semiconductor material, including an N doped zone and a P doped zone separated by an avalanche zone. The semiconductor material layer is intercalated between a periodic structure and a low index layer having a refractive index less than that of the semiconductor material layer and less than that of the periodic structure. The periodic structure is deposited directly on the semiconductor material layer. The photodiode provides low temporal dispersion and high quantum efficiency, without requiring a strong charge acceleration voltage.

Abstract: In one embodiment, an apparatus includes: a first layer including a n+ dopant or p+ dopant; an intrinsic layer formed above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, cavity regions being defined between the pillars; and a second layer deposited on a periphery of the pillars thereby forming coated pillars, the second layer being substantially absent on the planar portion of the intrinsic layer between the coated pillars. The second layer includes an n+ dopant when the first layer includes a p+ dopant. The second layer includes a p+ dopant when the first layer includes an n+ dopant. The apparatus includes a neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer. In additional embodiments, an upper portion of each of the pillars includes a same type of dopant as the second layer.

Abstract: A semiconductor device comprises a piece of semiconductor material. On a surface of said piece of semiconductor material, a number of electrodes exist and are configured to assume different electric potentials. A guard structure comprises a two-dimensional array of conductive patches, at least some of which are left to assume an electric potential under the influence of electric potentials existing at said electrodes.

Abstract: A method for performing contactless signal testing includes receiving, with a testing pad of an integrated circuit, a signal within an electron beam, converting an electrical current created by the e-beam to a voltage with a number of diodes connected to a positive voltage supply, extracting a digital test signal from the voltage signal with a digital inverter, and passing the test signal to digital circuitry within the integrated circuit.

Abstract: In one preferred embodiment, a semiconductor photodiode is provided which includes a substrate layer fabricated from a Si32 radioisotope of a first type of conductivity material and a thick-field oxide layer formed on the substrate layer. The oxide layer has a selectively patterned area to form an open region on the substrate layer. The semiconductor photodiode further includes a dopant material of a second conductivity material, which is different from the first conductivity material. The dopant material is formed within the open region on the substrate layer to form a photodiode junction. The semiconductor photodiode further includes an enclosure package enclosing the semiconductor diode for containing any radiation from the radioisotope.

Abstract: An assembly includes an integrated circuit, a film layer disposed over the integrated circuit and having a thickness of at least 50 microns, and a thermal neutron absorber layer comprising at least 0.5% thermal neutron absorber. The thermal neutron absorber layer can be a glass layer or can include a molding compound.

Abstract: In one preferred embodiment, a semiconductor diode includes a first layer formed with a p-type semiconductor, a second layer formed with an n-type semiconductor, and a third active depletion layer contained between the first and second layers. The third layer is formed with a radioisotope of the p-type and n-type semiconductors (preferably Si 32) such that initial emission of beta particles begins in the active depletion region and substantially all of the emitted beta particles are contained within the first, second and third layers during operation. The p-type and n-type layers each have sufficient depth to contain substantially all of beta particles emitted from the depletion layer. The depth of each of the p-type and n-type layers is substantially equal to or greater than the maximum beta emission depth of the radioisotope.

Abstract: Gray tone lithography is used to form curved silicon topographies for semiconductor based solid-state imaging devices. The imagers are curved to a specific curvature and shaped directly for the specific application; such as curved focal planes. The curvature of the backside is independent from the front surface, which allows thinning of the detector using standard semiconductor processing.

Abstract: A semiconductor device includes: a first semiconductor layer of a first conductivity type; an insulation layer on the first semiconductor layer; a second semiconductor layer in the insulation layer; an active element in the second semiconductor layer; a first semiconductor region on the first semiconductor layer and of a second conductivity type; a second semiconductor region in the first semiconductor region and of the second conductivity type with a higher impurity concentration than the first semiconductor region; a first conductor in a through hole in the insulation layer and connected to the second semiconductor region; a second conductor above or within the insulation layer, the second conductor surrounding the first conductor such that an outside edge thereof is outside the second semiconductor region; a third conductor connecting the first and second conductors; and a fourth conductor connected to the first semiconductor layer.

Abstract: A semiconductor structure for photon detection, comprising a substrate composed of a semiconductor material having a first doping, a contact region fitted at the frontside of the substrate, a bias layer composed of a semiconductor material having a second doping, which is arranged on the backside of the substrate at a distance from the contact region, wherein the contact region at least partly lies opposite the bias layer, such that an overlap region is present in a lateral direction, a guard ring, which is arranged at the frontside of the substrate and surrounds the contact region, wherein a reverse voltage can be applied between the contact region and the guard ring. In order to enable more cost-effective production, the overlap region has a lateral extent amounting to at least one quarter of the distance between contact region and bias layer.

Abstract: A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and the second element includes at least one of the following: chromium, cobalt, gallium, germanium, indium, molybdenum, nickel, palladium, ruthenium, silicon, silver, tantalum, titanium, tungsten, vanadium, zirconium, manganese, iron, magnesium, copper, tin, or gold. The layer can further include sublayers, each of which is made from a different one of the second elements and platinum as the first element.

Abstract: The invention relates to a semiconductor drift detector for detecting radiation, comprising a semiconductor substrate (HS), in which signal charge carriers are generated during operation, to be precise by incident photons (h·f) having a specific photon energy, more particularly in the form of X-ray fluorescent radiation, and/or by incident electrons (?), having a specific signal charge carrier current, more particularly in the form of back-scattered electrons (?), and comprising a read-out anode (A) for generating an electrical output signal in a manner dependent on the signal charge carriers, and comprising an erase contact (RC) for erasing the signal charge carriers that have accumulated in the semiconductor substrate (HS).

Abstract: The invention provides a semiconductor detector, and the semiconductor detector comprises a semiconductor crystal, a cathode, an anode and at least one ladder electrode; the semiconductor crystal comprises a top surface, a bottom surface and at least one side; the cathode, the anode and the ladder electrode are conductive thin films deposited on a surface of the semiconductor crystal; the cathode is disposed on the bottom surface of the semiconductor crystal, the anode is disposed on the top surface of the semiconductor crystal, the ladder electrode is disposed on the at least one side of the semiconductor crystal; and the ladder electrode comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution.

Abstract: A low-cost neutron detector is formed on a substrate includes a sensor formed by an active material layer sandwiched between two electrodes, and a neutron capture layer formed in close proximity to (i.e., over and/or under) the sensor. The sensor active material layer includes a bulk heterojunction or bilayer structure that is formed by depositing particulate solutions incorporating at least one type of high atomic number nanoparticle using low-temperature (i.e., below 400° C.) solution processing techniques. The sensor electrode material and neutron capture material are similarly disposed in associated solutions (e.g., conductive inks) that are also deposited using low-temperature solution processing techniques, whereby the fabrication process can be carried out on low-cost flexible substrate material (e.g., PET) using high efficiency roll-to-roll production techniques.

Abstract: There has been such a problem that radiation detecting elements using semiconductor elements have a low radiation detection efficiency, since the radiation detecting elements easily transmit radiation, even though the radiation detecting elements have merits, such as small dimensions and light weight. Disclosed are a radiation detecting element and a radiation detecting device, wherein a film formed of a metal, such as tungsten, is formed on the radiation incident surface of the radiation detecting element, and the incident energy of the radiation is attenuated. The efficiency of generating carriers by way of radiation incidence is improved by attenuating the incident energy, the thickness of the metal film is optimized, and the radiation detection efficiency is improved.

Abstract: Methods of fabricating optoelectronic devices, such as photovoltaic cells and light-emitting devices. In one embodiment, such a method includes providing a substrate, applying a monolayer of semiconductor particles to the substrate, and encasing the monolayer with one or more coatings so as to form an encased-particle layer. At some point during the method, the substrate is removed so as to expose the reverse side of the encased-particle layer and further processing is performed on the reverse side. When a device made using such a method has been completed and installed into an electrical circuit the semiconductor particles actively participate in the photoelectric effect or generation of light, depending on the type of device.

Abstract: Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO2, Gd-doped EuO, Gd-doped GaN, Gd2O3 and GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 ?m Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting Li2B4O7 layer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction.

Abstract: Embodiments of the present invention provide an integrated circuit system including a first active layer fabricated on a front side of a semiconductor die and a second pre-fabricated layer on a back side of the semiconductor die and having electrical components embodied therein, wherein the electrical components include at least one discrete passive component. The integrated circuit system also includes at least one electrical path coupling the first active layer and the second pre-fabricated layer.

Abstract: Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure.

Abstract: A photoelectric conversion apparatus includes: an active matrix-type TFT array substrate on which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, wherein the photoelectric conversion element connects with a drain electrode via a contact hole opened through a first interlayer insulation film provided above the thin film transistor, wherein a data line and a bias line are connected with the source electrode and the photoelectric conversion element via respective contact holes opened through the second interlayer insulation, and wherein at least a part of the photoelectric conversion element is fixed to have a shape different from a normal pixel between pixels adjacent to each other in an extending direction of the gate line, and an electrical connection between the photoelectric conversion element and the data line is cut off in the transistor of the pixel having the different shape.

Abstract: A radiation detector is disclosed, including a plurality of detector elements arranged adjacent to one another in a planar manner. In an embodiment, for the purpose of radiation detection, a semiconductor layer with an upper side and a lower side is present, the semiconductor layer on one of the sides including an electrode embodied so as to extend across a number of detector elements and electrodes subdivided into individual electrodes being arranged on the other side of the semiconductor layer so that by applying voltage between the electrodes of the two sides, an electrical field is generatable and each individual electrode is assigned an effective volume so as to collect charge in the semiconductor layer. In an embodiment, the individual electrodes are alternately connected to at least two different voltage potentials. Furthermore, a medical diagnostic system is disclosed, including at least one such radiation detector.

Abstract: Backside recesses in a base member host components, such as sensors or circuits, to allow closer proximity and efficient use of the surface space and internal volume of the base member. Recesses may include covers, caps, filters and lenses, and may be in communication with circuits on the frontside of the base member, or with circuits on an active backside cap. An array of recessed components may a form complete, compact sensor system.

Abstract: A standard member for automatically, stably, and highly accurately performing magnification calibration used in an electron microscope, the standard member including, on the same plane, a multilayer film cross section formed by alternately laminating materials different from each other, a plurality of first mark patterns arranged across a first silicon layer and in parallel to the multilayer film cross section, at least a pair of second mark patterns arranged across a second silicon layer thicker than the first silicon layer on the opposite side of the first mark patterns with respect to the multilayer film cross section and in parallel to the multilayer film cross section, and a silicon layer arranged on the outer side of the first mark patterns and the second mark patterns with respect to the multilayer film cross section.

Abstract: The invention provides a semiconductor device (11) for radiation detection, which comprises a substrate region (1) of a substrate semiconductor material, such as silicon, and a detection region (3) at a surface of the semiconductor device (11), in which detection region (3) charge carriers of a first conductivity type, such as electrons, are generated and detected upon incidence of electromagnetic radiation (L) on the semiconductor device (11). The semiconductor device (11) further comprises a barrier region (2,5,14) of a barrier semiconductor material or an isolation material, which barrier region (2,5,14) is an obstacle between the substrate region (1) and the detection region (3) for charge carriers that are generated in the substrate region (1) by penetration of ionizing radiation (X), such as X-rays, into the substrate region (1).

Abstract: The present invention provides an inexpensive display device that includes an ion sensor portion and a display and that can be miniaturized. The present invention is a display device that includes an ion sensor portion including an ion sensor circuit and a display including a display-driving circuit. The display device has a substrate, and at least one portion of the ion sensor circuit and at least one portion of the display-driving circuit are formed on the same main surface of the substrate.

Abstract: The present invention generally relates to a radiation sensor for use particularly in, but by no means exclusively, in measuring radiation dose in photon or electron fields such as for radiation medicine, including radiotherapy and radiation based diagnosis. According to the present invention, there is provided a semiconductor radiation detector comprising a radiation sensitive detector element arranged such that it forms a continuous radiation sensitive portion having surfaces oriented in at least two non-parallel directions.

Abstract: An apparatus (200) for detecting slow or thermal neutrons (160). The apparatus (200) includes an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel.

Abstract: A radiation detector includes a sensor substrate and a scintillator layer. The sensor substrate is configured to be capable of performing photoelectric conversion. The scintillator layer includes a first area and a second area, the first area including an activator, the second area including the activator with a concentration lower than the concentration of the activator in the first area, the scintillator layer being provided on the sensor substrate so that the first area and the second area are arranged in a thickness direction of the scintillator layer and the first area is arranged from an end portion on a side of the sensor substrate in the scintillator layer in the thickness direction.

Abstract: The invention relates to a radiation detector (10), comprising an array of pixels (1), wherein each pixel (1) comprises a conversion layer of a semiconductor material (4) for converting incident radiation into electrical signals and wherein each pixel (1) is surrounded by a trench (3) that is at least partly filled with a barrier material that absorbs at least a part of photons generated by the incident radiation. The invention also relates to a method of manufacturing such a radiation detector (10).

Abstract: An object of the present invention is to provide a radioactive ray detector for enabling to reduce the parasitic capacity lower than that of the conventional art, which is generated between the semiconductor elements of the radioactive ray detectors neighboring with, and a radioactive ray detecting apparatus applying that therein.

Abstract: A solid-state imaging apparatus comprising a plurality of pixels each including a photoelectric conversion element, and a light shielding layer which covers the photoelectric conversion element is provided. The light shielding layer comprises a first light shielding portion which covers at least part of a region between the photoelectric conversion elements that are adjacent to each other, and a second light shielding portion for partially shielding light incident on the photoelectric conversion element of each of the plurality of pixels. An aperture is provided for the light shielding layer, the remaining component of the incident light passing through the aperture. A shape of the aperture includes a cruciform portion including a portion extending in a first direction and a portion extending in a second direction that intersects the first direction.

Abstract: Systems and methods are described herein for detecting particles emitted by nuclear material. The systems comprise one or more semiconductor devices for detecting particles emitted from nuclear material. The semiconductor devices can comprise a charge storage element comprising several layers. A non-conductive charge storage layer enveloped on top and bottom by dielectric layers is mounted on a substrate. At least one top semiconductor layer can be placed on top of the top dielectric layer. A reactive material that reacts to particles, such as neutrons emitted from nuclear material, can be incorporated into the top semiconductor layer. When the reactive material reacts to a particle emitted from nuclear material, ions are generated that can alter the charge storage layer and enable detection of the particle.

Abstract: Optical modulator having wide bandwidth based on Fabry-Perot resonant reflection is disclosed. The optical modulator includes: a bottom Distributed Bragg Reflector (DBR) layer; a top DBR layer including at least one layer, and a modified layer; and an active layer disposed between bottom and top DBR layers, wherein the at least one layer includes at least one pair of a first refractive index layer having a first refractive index and a second refractive index layer having a second refractive index, the modified layer includes at least one pair of a third refractive index layer having a third refractive index and a fourth refractive index layer having a fourth refractive index, the third and the fourth refractive indexes being different, and at least one of the third and the fourth refractive index layers has a second optical thickness that is not ?/4 or that is not an odd multiple thereof.

Abstract: In one preferred embodiment, a semiconductor diode includes a first layer formed with a p-type semiconductor, a second layer formed with an n-type semiconductor, and a third active depletion layer contained between the first and second layers. The third layer is formed with a radioisotope of the p-type and n-type semiconductors (preferably Si 32) such that initial emission of beta particles begins in the active depletion region and substantially all of the emitted beta particles are contained within the first, second and third layers during operation. The p-type and n-type layers each have sufficient depth to contain substantially all of beta particles emitted from the depletion layer. The depth of each of the p-type and n-type layers is substantially equal to or greater than the maximum beta emission depth of the radioisotope.

Abstract: Charged particle sensing devices and methods of forming charged particle sensing devices are provided. The charged particle sensing device includes a source of charged particles, a plurality of collector electrodes for receiving a first portion of the charged particles and a grid formed around and spaced apart from the plurality of collector electrodes. The grid receives a second portion of the charged particles and directs backscattered charged particles, generated responsive to the second portion, to adjacent collector electrodes.

Abstract: A radiation detector is disclosed. The detector has an entrance opening etched through a low-resistivity volume of silicon, a sensitive volume of high-resistivity silicon for converting the radiation particles into detectable charges, and a passivation layer between the low and high-resistivity silicon layers. The detector also has electrodes built in the form of vertical channels for collecting the charges generated in the sensitive volume, and read-out electronics for generating signals based on the collected charges.

Abstract: A method and device include a conductive base layer, a semiconducting layer supported by and electrically coupled to the base layer, the semiconductor layer have integrated gadolinium nanoparticles presenting a high cross section to neutron particles, and a conductive top layer electrically coupled to the semiconductor layer, wherein the base layer and top layer are disposed to collect current from electrons resulting from neutron interactions with the gadolinium nanoparticles.

Abstract: The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. The detector is a PIN photodiode with a thin layer of pure boron connected to the p+-diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode. The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer.