With Backside Illumination (e.g., With A Thinned Central Area Or Non-absorbing Substrate) Patents (Class 257/460)
  • Patent number: 10892292
    Abstract: A back-side illuminated image sensor includes memory regions formed in a semiconductor wafer. Each memory region is located between two opaque walls which extend into the semiconductor wafer. An opaque screen is arranged at the rear surface of the memory region and in electrical contact with the opaque walls.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: January 12, 2021
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Daniel Benoit, Olivier Hinsinger, Emmanuel Gourvest
  • Patent number: 10886311
    Abstract: A photo-detecting apparatus includes an absorption layer configured to absorb photons and to generate photo-carriers from the absorbed photons, wherein the absorption layer includes germanium. A carrier guiding unit is electrically coupled to the absorption layer, wherein the carrier guiding unit includes a first switch including a first gate terminal.
    Type: Grant
    Filed: April 8, 2019
    Date of Patent: January 5, 2021
    Assignee: Artilux, Inc.
    Inventors: Chien-Yu Chen, Yun-Chung Na, Szu-Lin Cheng, Ming-Jay Yang, Han-Din Liu, Che-Fu Liang
  • Patent number: 10797099
    Abstract: The present disclosure provides an image sensor and a method of manufacturing the same. An image sensor includes a first substrate, a barrier structure, a first structure, a second substrate, and a second structure. The first substrate includes a device region in which unit pixels are disposed and a first residual scribe lane region surrounding the device region. The first substrate has a first surface and a second surface. The barrier structure penetrates the first substrate in the first residual scribe lane region. The first surface of the first substrate is on the first structure. The second substrate includes a second residual scribe lane region facing the first residual scribe lane region. The second substrate has a front surface and a rear surface. The second structure is on the front surface of the second substrate and faces the first surface of the first substrate. The second structure is bonded to the first structure.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: October 6, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun-hyun Kim, Han-seok Kim, Chung-ho Song, Jin-ju Jeon
  • Patent number: 10741506
    Abstract: A structure includes a first die and a second die. The first die includes a first bonding layer having a first plurality of bond pads disposed therein and a first seal ring disposed in the first bonding layer. The first bonding layer extends over the first seal ring. The second die includes a second bonding layer having a second plurality of bond pads disposed therein. The first plurality of bond pads is bonded to the second plurality of bond pads. The first bonding layer is bonded to the second bonding layer. An area interposed between the first seal ring and the second bonding layer is free of bond pads.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: August 11, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chia Hu, Chun-Chiang Kuo, Sen-Bor Jan, Ming-Fa Chen, Hsien-Wei Chen
  • Patent number: 10483317
    Abstract: The present disclosure provides an image sensor and a method of manufacturing the same. An image sensor includes a first substrate, a barrier structure, a first structure, a second substrate, and a second structure. The first substrate includes a device region in which unit pixels are disposed and a first residual scribe lane region surrounding the device region. The first substrate has a first surface and a second surface. The barrier structure penetrates the first substrate in the first residual scribe lane region. The first surface of the first substrate is on the first structure. The second substrate includes a second residual scribe lane region facing the first residual scribe lane region. The second substrate has a front surface and a rear surface. The second structure is on the front surface of the second substrate and faces the first surface of the first substrate. The second structure is bonded to the first structure.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: November 19, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun-hyun Kim, Han-seok Kim, Chung-ho Song, Jin-ju Jeon
  • Patent number: 10475827
    Abstract: An electronic image capture device includes a first portion and a second portion. The first portion is formed by a substrate wafer provided on one side with electronic circuits and a dielectric layer with a network of electrical connections and external electrical contacts on an outer surface. The second portion includes a pixel wafer capable of generating electrical signals under the effect of light, a substrate wafer mounted to the pixel wafer and provided with electronic circuits and a dielectric layer with a network of electrical connections and external electrical contacts on an outer surface. The outer surfaces and external electrical contacts are bonded to each other so as to mount the first portion to the second portion. A connection pad extends through a hole in the pixel wafer to make electrical connection to the network of electrical connections of the second portion.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: November 12, 2019
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventor: Francois Roy
  • Patent number: 10312201
    Abstract: A structure includes a first die and a second die. The first die includes a first oxide bonding layer having a first plurality of bond pads disposed therein and a first seal ring disposed in the first oxide bonding layer. The first oxide bonding layer extends over the first seal ring. The second die includes a second oxide bonding layer having a second plurality of bond pads disposed therein. The first plurality of bond pads is bonded to the second plurality of bond pads. The first oxide bonding layer is bonded to the second oxide bonding layer. An area interposed between the first seal ring and the second oxide bonding layer is free of bond pads.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: June 4, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chia Hu, Chun-Chiang Kuo, Sen-Bor Jan, Ming-Fa Chen, Hsien-Wei Chen
  • Patent number: 9716120
    Abstract: An image sensor includes a semiconductor substrate integrated with at least one of a first photo-sensing device that may sense a first wavelength spectrum of visible light and a second photo-sensing device that may sense second wavelength spectrum of visible light, and a third photo-sensing device on the semiconductor substrate that may selectively sense third wavelength spectrum of visible light in a longer wavelength spectrum of visible light than the first wavelength spectrum of visible light and the second wavelength spectrum of visible light. The first photo-sensing device and the second photo-sensing device may overlap with each other in a thickness direction of the semiconductor substrate.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: July 25, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong Wan Jin, Kwang Hee Lee, Gae Hwang Lee, Kyung Bae Park, Dong-Seok Leem, Yeong Suk Choi
  • Patent number: 9443892
    Abstract: An image sensor includes a substrate having a first surface opposing a second surface and a plurality of pixel regions. A photoelectric converter is included in each of the pixel regions, and a gate electrode is formed on the photoelectric converter. Also, a pixel isolation region isolates adjacent pixel regions. The pixel isolation region includes a first isolation layer coupled to a channel stop region. The channel stop region may include an impurity-doped region.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: September 13, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: June-mo Koo, Sang-Hoon Kim, Seung-Hun Shin, Jongcheol Shin
  • Patent number: 9391114
    Abstract: Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device includes a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. A guard structure is disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region. A portion of the guard structure is disposed within a substrate of the semiconductor chip.
    Type: Grant
    Filed: July 8, 2014
    Date of Patent: July 12, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Feng-Chi Hung, Min-Feng Kao, Jeng-Shyan Lin, Chun-Ming Su, Ching-Chun Wang
  • Patent number: 9324760
    Abstract: A method for manufacturing an imaging device in a semiconductor substrate is disclosed. The substrate includes a first surface, a second surface substantially opposite the first surface, and a thickness defined by a distance between the first surface and the second surface. A trench is fabricated in the semiconductor substrate first surface. A passivation layer is applied over the substrate first surface and the trench, optionally filling the trench by depositing a conformal layer over the substrate first surface. The conformal layer and the passivation layer are planarized from the substrate first surface, and a membrane is fabricated on the substrate first surface. From the substrate second surface, a cavity is formed in the substrate abutting the membrane and at least a portion of the trench via the unmasked region.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: April 26, 2016
    Assignee: Excelitas Technologies Singapore Pte. Ltd
    Inventors: Philippe Vasseur, Grigore D. Huminic, Hermann Karagoezoglu, Radu M. Marinescu
  • Patent number: 9281336
    Abstract: Embodiments of mechanisms of a backside illuminated image sensor device structure are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process.
    Type: Grant
    Filed: September 26, 2013
    Date of Patent: March 8, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., LTD
    Inventors: Chung-Chuan Tseng, Chia-Wei Liu, Li-Hsin Chu, Yu-Hsiang Tsai
  • Patent number: 9159755
    Abstract: An image sensor includes a photoelectric conversion region formed in a substrate, an interlayer insulation layer formed over a front side of the substrate, a carbon-containing layer doped with impurities and formed over a back side of the substrate, and a color filter and a micro-lens formed over the carbon-containing layer.
    Type: Grant
    Filed: December 15, 2013
    Date of Patent: October 13, 2015
    Assignee: SK Hynix Inc.
    Inventors: Chung-Seok Choi, Jong-Chae Kim, Do-Hwan Kim
  • Patent number: 9142709
    Abstract: A method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface, forming a light sensing region at the first surface of the substrate, forming a doped layer at the second surface of the substrate using a laser annealing process, and performing a chemical mechanical polishing process on the annealed, doped layer.
    Type: Grant
    Filed: August 19, 2014
    Date of Patent: September 22, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shou-Shu Lu, Hsun-Ying Huang, I-Chang Lin, Chia-Chi Hsiao, Yung-Cheng Chang
  • Publication number: 20150145096
    Abstract: Embodiments of mechanisms for forming an image-sensor device are provided. The image-sensor device includes a substrate having a front surface and a back surface. The image-sensor device also includes a radiation-sensing region formed in the substrate. The radiation-sensing region is operable to detect incident radiation that enters the substrate through the back surface. The radiation-sensing region further includes an epitaxial isolation feature formed in the substrate and adjacent to the radiation-sensing region. The radiation-sensing region and the epitaxial isolation feature have different doping polarities.
    Type: Application
    Filed: November 25, 2013
    Publication date: May 28, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Wen-I HSU, Feng-Chi HUNG, Chun-Chieh CHUANG, Dun-Nian YAUNG, Jen-Cheng LIU
  • Patent number: 9041140
    Abstract: A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: May 26, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Min Hao Hong, Ting-Chun Wang, Chung-Ren Sun
  • Publication number: 20150115389
    Abstract: Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device includes a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. A guard structure is disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region. A portion of the guard structure is disposed within a substrate of the semiconductor chip.
    Type: Application
    Filed: July 8, 2014
    Publication date: April 30, 2015
    Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Feng-Chi Hung, Min-Feng Kao, Jeng-Shyan Lin, Chun-Ming Su, Ching-Chun Wang
  • Patent number: 9000492
    Abstract: In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: April 7, 2015
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hisanori Suzuki, Yasuhito Yoneta, Yasuhito Miyazaki, Masaharu Muramatsu, Koei Yamamoto
  • Publication number: 20150061062
    Abstract: Embodiments of mechanisms of for forming an image-sensor device are provided. The image-sensor device includes a substrate having a front surface and a back surface. The image-sensor device also includes a radiation-sensing region operable to detect incident radiation that enters the substrate through the back surface. The image-sensor device further includes a doped isolation region formed in the substrate and adjacent to the radiation-sensing region. In addition, the image-sensor device includes a deep-trench isolation structure formed in the doped isolation region. The deep-trench isolation structure includes a trench extending from the back surface and a negatively charged film covering the trench.
    Type: Application
    Filed: September 3, 2013
    Publication date: March 5, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Jeng-Shyan LIN, Dun-Nian YAUNG, Jen-Cheng LIU, Feng-Chi HUNG
  • Patent number: 8958011
    Abstract: Bi-directional camera modules and flip chip bonders including the same are provided. The module includes a circuit board on which an upper sensor and a lower sensor are mounted, an upper lens and a lower lens disposed on the upper sensor and under the lower sensor, respectively, and a housing fixing the upper lens and the lower lens spaced apart from the upper sensor and the lower sensor, respectively. The housing surrounds the circuit board. The housing has a plurality of inlets and an outlet through which air flows, and the housing has an air passage connected from the inlets to the outlet via a space between lower lens and the lower sensor.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: February 17, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Sick Park, Myung-Sung Kang, Ji-Seok Hong
  • Publication number: 20150035103
    Abstract: According to one embodiment, a solid state imaging device includes a semiconductor substrate comprising a first surface and a second surface opposite the first surface; a circuit at a side of the first surface of the semiconductor substrate; a pixel in the semiconductor substrate and converting light from a side of the second surface into electric charge; and an element at a side of the second surface of the semiconductor substrate. The pixel includes a photo diode in the semiconductor substrate at the side of the first surface, and the photo diode includes a diffusion layer in an impurity region in the semiconductor substrate at the side of the first surface.
    Type: Application
    Filed: March 7, 2014
    Publication date: February 5, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventor: Ikuko INOUE
  • Patent number: 8921187
    Abstract: Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the sidewall of the transfer gate closest to the photosensitive region, the sacrificial layer having a selected thickness. A layer of photoresist is deposited over the sacrificial layer, which is patterned and etched to expose the surface of the substrate over the photosensitive region and at least part of the transfer gate top surface, leaving a sacrificial spacer on the sidewall of the transfer gate closest to the photosensitive region. The substrate is plasma doped to form a pinning layer between the photosensitive region and the surface of the substrate. The spacing between the pinning layer and the sidewall of the transfer gate substantially corresponds to a thickness of the sacrificial spacer. Other embodiments are disclosed and claimed.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: December 30, 2014
    Assignee: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Duli Mao, Hsin-Chih Tai, Vincent Venezia, Yin Qian, Howard E. Rhodes
  • Publication number: 20140367824
    Abstract: Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.
    Type: Application
    Filed: August 28, 2014
    Publication date: December 18, 2014
    Applicant: The Govemment of the United States of America, as represented by the Secretary of the Navy
    Inventors: Francis J. Kub, Karl D. Hobart, Travis J. Anderson
  • Patent number: 8890274
    Abstract: A device includes a metal pad at a surface of an image sensor chip, wherein the image sensor chip includes an image sensor. A stud bump is disposed over, and electrically connected to, the metal pad. The stud bump includes a bump region, and a tail region connected to the bump region. The tail region includes a metal wire portion substantially perpendicular to a top surface of the metal pad. The tail region is short enough to support itself against gravity.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: November 18, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Yung Ching Chen, Chien-Hsun Lee, Mirng-Ji Lii
  • Patent number: 8890273
    Abstract: An improved reflectivity optical grid for image sensors. In an embodiment, a backside illuminated CIS device includes a semiconductor substrate having a pixel array area comprising a plurality of photosensors formed on a front side surface of the semiconductor substrate, each of the photosensors forming a pixel in the pixel array area; an optical grid material disposed over a backside surface of the semiconductor substrate, the optical grid material patterned to form an optical grid that bounds each of the pixels in the pixel array area and extending above the semiconductor substrate, the optical grid having sidewalls and a top portion; and a highly reflective coating formed over the optical grid, comprising a pure metal coating of a metal that is at least 99% pure, and a high-k dielectric coating over the pure metal coating that has a refractive index of greater than about 2.0. Methods are also disclosed.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: November 18, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Kei-Wei Chen, Ying-Lang Wang
  • Patent number: 8872301
    Abstract: The presented principles describe an apparatus and method of making the same, the apparatus being a semiconductor circuit device, having shallow trench isolation features bounding an active area and a periphery area on a semiconductor substrate to electrically isolate structures in the active area from structures in the periphery area. The shallow trench isolation feature bounding the active area is shallower than the shallow trench isolation feature bounding the periphery area, with the periphery area shallow trench isolation structure being formed through two or more etching steps.
    Type: Grant
    Filed: April 24, 2012
    Date of Patent: October 28, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Yang Hung, Po-Zen Chen, Szu-Hung Yang, Chih-Cherng Jeng, Chih-Kang Chao, I-I Cheng
  • Patent number: 8847286
    Abstract: An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: September 30, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko Jangjian, Kei-Wei Chen, Szu-An Wu, Ying-Lang Wang
  • Patent number: 8841714
    Abstract: A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having a plurality of photosensitive regions 7, and a potential gradient forming portion 3 having an electroconductive member 8 arranged opposite to the photosensitive regions 7. A planar shape of each photosensitive region 7 is a substantially rectangular shape. The photosensitive regions 7 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 forms a potential gradient becoming higher along a second direction from one of the short sides to the other of the short sides of the photosensitive regions 7. The electroconductive member 8 includes a first region 8a extending in the second direction and having a first electric resistivity, and a second region 8b extending in the second direction and having a second electric resistivity smaller than the first electric resistivity.
    Type: Grant
    Filed: November 11, 2011
    Date of Patent: September 23, 2014
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Tomohiro Ikeya, Yasuhito Yoneta, Hisanori Suzuki, Masaharu Muramatsu
  • Patent number: 8841743
    Abstract: A back-illuminated type solid-state image pickup device (1041) includes read circuits (Tr1, Tr2) formed on one surface of a semiconductor substrate (1042) to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate (1042), in which electric charges (e) generated in a photo-electric conversion region (1052c1) formed under at least one portion of the read circuits (Tr1, Tr2) are collected to an electric charge accumulation region (1052a) formed on one surface side of the semiconductor substrate (1042) of the photo-electric conversion element (PD) by electric field formed within the photo-electric conversion element (PD). Thus, the solid-state image pickup device and the camera are able to make the size of pixel become very small without lowering a saturation electric charge amount (Qs) and sensitivity.
    Type: Grant
    Filed: March 1, 2011
    Date of Patent: September 23, 2014
    Assignee: Sony Corporation
    Inventors: Shin Iwabuchi, Kazuhide Yokota, Takeshi Yanagita, Yasushi Maruyama
  • Patent number: 8836065
    Abstract: According to one embodiment, a solid-state imaging device includes a semiconductor substrate including a pixel area and a peripheral circuit area, an interconnection structure provided on a first principal surface of the semiconductor substrate and including first interconnection layers electrically connected to the peripheral circuit area, a second interconnection layer provided in the peripheral circuit area and on a second principal surface of the semiconductor substrate, a third interconnection layer provided above the second interconnection layer with an insulating layer therebetween, and through electrodes electrically connecting the second interconnection layer to the third interconnection layer.
    Type: Grant
    Filed: August 2, 2013
    Date of Patent: September 16, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Jiro Hayakawa, Tomoyuki Yoda
  • Patent number: 8829637
    Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: September 9, 2014
    Assignee: Semiconductor Components Industries, LLC
    Inventors: John P. McCarten, Robert Michael Guidash
  • Patent number: 8823126
    Abstract: This invention discloses a backside illuminated image sensor without the need to involve a mechanical grinding process or a chemical-mechanical planarization process in fabrication, and a fabricating method thereof. In one embodiment, an image sensor comprises a semiconductor substrate, a plurality of light sensing elements in the semiconductor substrate, and a cavity formed in the semiconductor substrate. The light sensing elements are arranged in a substantially planar manner. The cavity has a base surface overlying the light sensing elements. The presence of the cavity allows the image to reach the light sensing elements through the cavity base surface. The cavity can be fabricated by etching the semiconductor substrate. Agitation may also be used when carrying out the etching.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: September 2, 2014
    Assignee: Hong Kong Applied Science and Technology Research Institute Company Limited
    Inventors: Dan Yang, Yat Kit Tsui, Shu Kin Yau, Pui Chung Law
  • Patent number: 8815723
    Abstract: A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100┬░ C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: August 26, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shou Shu Lu, Hsun-Ying Huang, I-Chang Lin, Chia-Chi Hsiao, Yung-Cheng Chang
  • Patent number: 8809098
    Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystallized silicon layer is formed on the back side of the substrate. The recrystallized silicon layer has different photoluminescence intensity than the substrate.
    Type: Grant
    Filed: November 25, 2013
    Date of Patent: August 19, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Yeur-Luen Tu, Jen-Cheng Liu, Keng-Yu Chou, Chung Chien Wang
  • Patent number: 8796805
    Abstract: A method includes forming an opening extending from a back surface of a semiconductor substrate to a metal pad on a front side of the semiconductor substrate, and forming a first conductive layer including a first portion overlapping active image sensors in the semiconductor substrate, a second portion overlapping black reference image sensors in the semiconductor substrate, and a third portion in the opening to contact the metal pad. A second conductive layer is formed over and contacting the first conductive layer. A first patterning step is performed to remove the first and the second portions of the second conductive layer, wherein the first conductive layer is used as an etch stop layer. A second patterning step is performed to remove a portion of the first portion of the first conductive layer. The second and the third portions of the first conductive layer remain after the second patterning step.
    Type: Grant
    Filed: September 5, 2012
    Date of Patent: August 5, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shyh-Fann Ting, Jiech-Fun Lu, Ming-I Wang, Yeur-Luen Tu, Ching-Chun Wang
  • Patent number: 8786742
    Abstract: In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.
    Type: Grant
    Filed: October 19, 2012
    Date of Patent: July 22, 2014
    Assignee: Sony Corporation
    Inventors: Keiji Mabuchi, Nobuhiro Karasawa
  • Patent number: 8778778
    Abstract: According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.
    Type: Grant
    Filed: August 18, 2011
    Date of Patent: July 15, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazumasa Tanida, Masahiro Sekiguchi, Masayuki Dohi, Tsuyoshi Matsumura, Hideo Numata, Mari Otsuka, Naoko Yamaguchi, Takashi Shirono, Satoshi Hongo
  • Patent number: 8772898
    Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: July 8, 2014
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Hsin-Chih Tai, Vincent Venezia, Yin Qian, Gang Chen, Howard E. Rhodes
  • Patent number: 8772899
    Abstract: Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.
    Type: Grant
    Filed: March 1, 2012
    Date of Patent: July 8, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Min Hao Hong, Kei-Wei Chen, Ying-Lang Wang
  • Patent number: 8759141
    Abstract: A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.
    Type: Grant
    Filed: May 2, 2013
    Date of Patent: June 24, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzu-Hsuan Hsu, Han-Chi Liu, Ching-Chun Wang
  • Publication number: 20140151840
    Abstract: Methods and apparatus for forming a bond pad of a semiconductor device such as a backside illuminated (BSI) image sensor device are disclosed. The substrate of a device may have an opening at the backside, through the substrate reaching the first metal layer at the front side of the device. A buffer layer may be formed above the backside of the substrate and covering sidewalls of the substrate opening. A pad metal layer may be formed above the buffer layer and in contact with the first metal layer at the bottom of the substrate opening. A bond pad may be formed in contact with the pad metal layer. The bond pad is connected to the pad metal layer vertically above the substrate, and further connected to the first metal layer of the device at the opening of the substrate.
    Type: Application
    Filed: December 4, 2012
    Publication date: June 5, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Ching-Hung Cheng
  • Patent number: 8735208
    Abstract: A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) forming, from the front surface of the substrate, areas of same conductivity type as the substrate but of higher doping level, extending deep under the front surface, these areas being bordered with insulating regions orthogonal to the front surface; b) thinning the substrate from the rear surface to the vicinity of these areas and all the way to the insulating regions; c) partially hollowing out the insulating regions on the rear to surface side; and d) performing a laser surface anneal of the rear surface of the substrate.
    Type: Grant
    Filed: April 12, 2012
    Date of Patent: May 27, 2014
    Assignees: STMicroelectronics S.A., STMicroelectronics (Crolles 2) SAS
    Inventors: Fran├žois Roy, Michel Marty
  • Patent number: 8723284
    Abstract: The invention describes a solid-state CMOS image sensor array and in particular describes in detail the image sensor array pixels, with global and rolling shutter capabilities, that utilize charge storage gates located on top of a pinned photodiode. The sensor array is illuminated from the back side and the location of the storage gate on top of the pinned photodiode saves valuable pixel area, which does not compromise the Dynamic Range of the image sensor.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: May 13, 2014
    Assignee: Aptina Imaging Corporation
    Inventor: Jaroslav Hynecek
  • Patent number: 8704321
    Abstract: Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.
    Type: Grant
    Filed: May 3, 2012
    Date of Patent: April 22, 2014
    Assignee: Panasonic Corporation
    Inventors: Toru Okino, Yoshihisa Kato, Yutaka Hirose, Mitsuyoshi Mori
  • Patent number: 8698925
    Abstract: An image sensor is disclosed that includes a solid state semiconductor imager having a metallized catch pad, a collimator having a metallized layer that faces a sensor anode, the metallized layer joined with the metallized catch pad to form a metal bond between the solid state semiconductor imager and the collimator. Methods of making the joined solid state semiconductor imager and collimator assembly are also disclosed.
    Type: Grant
    Filed: April 21, 2010
    Date of Patent: April 15, 2014
    Assignee: Intevac, Inc.
    Inventors: Kenneth A. Costello, Kevin J. Roderick, Edward Yin, Douglas Fowler
  • Publication number: 20140091416
    Abstract: A photoelectric conversion apparatus has multiple photoelectric converting units disposed in a semiconductor substrate, and isolation portions disposed in the semiconductor substrate. Each photoelectric converting unit includes a second semiconductor region, a third semiconductor region, disposed below the second semiconductor region and a fourth semiconductor region disposed below the third semiconductor region.
    Type: Application
    Filed: September 27, 2013
    Publication date: April 3, 2014
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Takanori Watanabe
  • Patent number: 8674467
    Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
    Type: Grant
    Filed: July 10, 2012
    Date of Patent: March 18, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-De Wang, Dun-Nian Yaung, Jen-Cheng Liu, Chun-Chieh Chuang, Jeng-Shyan Lin
  • Patent number: 8674417
    Abstract: A solid-state imaging device including: a substrate; a light-receiving part; a second-conductivity-type isolation layer; a detection transistor; and a reset transistor.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: March 18, 2014
    Assignee: Sony Corporation
    Inventor: Isao Hirota
  • Patent number: 8674469
    Abstract: A backside illuminated image sensor includes an isolation structure passing through a substrate, a sensor element formed overlying the front surface of the substrate, and a color filter formed overlying the back surface of the substrate.
    Type: Grant
    Filed: April 23, 2010
    Date of Patent: March 18, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuan-Chieh Huang, Chih-Jen Wu, Chen-Ming Huang, Dun-Nian Yaung, An-Chun Tu
  • Patent number: 8664736
    Abstract: A semiconductor device including a device substrate having a front side and a back side. The semiconductor device further includes an interconnect structure disposed on the front side of the device substrate, the interconnect structure having a n-number of metal layers. The semiconductor device also includes a bonding pad disposed on the back side of the device substrate, the bonding pad extending through the interconnect structure and directly contacting the nth metal layer of the n-number of metal layers.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: March 4, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shuang-Ji Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Jeng-Shyan Lin, Wen-De Wang, Yueh-Chiou Lin