Abstract: A semiconductor module including first and second transistors coupled in parallel to a first line receiving a power supply voltage, a driver circuit configured to apply, to a second line, a first voltage to turn on the first and second transistors in response to an input signal, a first resistor having two ends respectively coupled to the second line and a control electrode of the second transistor, a second resistor having two end respectively coupled to one of the two ends of the first resistor and a control electrode of the first transistor, a third resistor coupled to the second transistor, a third transistor coupled to one of the two ends of the second resistor, and a terminal coupled to the first to third transistors, the third resistor, and a load, such that the load receives a current from the first transistor.

Abstract: A stacked III-V semiconductor diode comprising or consisting of GaAs, with a heavily n-doped cathode layer, a heavily p-doped anode layer, and a drift region arranged between the cathode layer and the anode layer with a dopant concentration of at most 8·1015 cm?3, and a layer thickness of at least 10 ?m, wherein the cathode layer has a delta layer section with a layer thickness of 0.1 ?m to 2 ?m and a dopant concentration of at least 1·1019 cm?3.

Abstract: There is disclosed herein a flow sensor comprising: a first substrate comprising an etched portion; a dielectric layer located on the first substrate, where the dielectric layer comprises at least one dielectric membrane located over the etched portion of the first substrate; a first heating element and a second heating element located on or within the dielectric membrane; and a controller coupled with the first heating element and the second heating element. The first heating element and the second heating element are arranged to intersect one another within or over an area of the dielectric membrane. The controller is configured to: take a measurement from the second heating element; determine a calibration parameter using the measurement from the second heating element; take a measurement from the first heating element; and determine a flow rate through the flow sensor using the determined calibration parameter and the measurement from the first heating element.

Abstract: A transistor semiconductor die includes a first current terminal, a second current terminal, and a control terminal. A semiconductor structure is between the first current terminal, the second current terminal, and the control terminal and configured such that a resistance between the first current terminal and the second current terminal is based on a control signal provided at the control terminal. Short circuit protection circuitry is coupled between the control terminal and the second current terminal. In a normal mode of operation, the short circuit protection circuitry is configured to provide a voltage drop that is greater than a voltage of the control signal. In a short circuit protection mode of operation, the short circuit protection circuitry is configured to provide a voltage drop that is less than a voltage of the control signal.

Abstract: Methods, systems, and apparatus to manufacture a microbolometer detector in a standard CMOS foundry. The method includes forming a Complementary Metal Oxide Semiconductor (CMOS) wafer including a silicon substrate layer, a metal stack, a dielectric layer, and a thermoelectric conversion element embedded in the dielectric layer. The metal stack includes at least two metal layers in contact with each other. The metal stack and the dielectric layer are on the silicon substrate layer. The thermoelectric conversion element is configured to convert heat into an electrical signal. The method includes etching the metal stack to define exterior lateral edges of a microbolometer bridge including at least a portion of the dielectric layer and the thermoelectric conversion element embedded in the dielectric layer. The method includes etching the silicon substrate layer beneath the microbolometer bridge.

Abstract: A test paddle is provided that includes a body portion having a first end and a second end. The test paddle includes a plurality of adapters provided about the second end and a plurality of contacts provided about the first end, each of the plurality of adapters electrically coupled to one of the plurality of contacts. The test paddle includes a removable insulation plate selectively attached to the body portion. A method for testing relays is also provided.

Abstract: A measuring device is provided. The measuring device comprises a user input, a storage, and a processor. In this context, the user input is configured to receive at least one measurement sequence from a user, whereas the storage is configured to store at least one measurement parameter and at least one duration of time required by the measuring device to achieve the at least one measurement parameter. In addition to this, the processor is configured to calculate the total time needed for the at least one measurement sequence on the basis of the at least one duration of time.

Abstract: The present disclosure provides a method for controlling a junction temperature of a device under test, including applying a reverse bias to a reference diode adjacent to the device under test, obtaining a calibration current of the reference diode under the reverse bias, deriving the junction temperature of the device under test according to the reference diode, and adjusting an environment temperature when the junction temperature of the device under test is deviated from a predetermined value by a predetermined temperature range.

Abstract: An integrated sensor and service port for HVAC (heating, ventilating, and air conditioning) equipment or an HVAC system.

Abstract: An implantable medical device that includes electrical circuitry for providing a therapy to a patient. The device also includes a housing forming an inner chamber that is adapted for receiving, at least a portion of the electrical circuitry. The device further includes a thermally conductive material that is configured to disperse heat from a first portion of the implantable medical device that is located in proximity to a heat generating component of the electrical circuitry, to a second portion of the implantable medical device that is not located in proximity to said heat generating component. The thermally conductive material is a discrete component separate from the electrical circuitry and the housing.

Abstract: A semiconductor device that can detect temperature appropriately is provided. A semiconductor device provided with a semiconductor substrate in which one or more transistor portions and one or more diode portions are provided is provided, including: a temperature detecting portion provided above the top surface of the semiconductor substrate and having a longitudinal side in a predetermined longitudinal direction; a top surface electrode provided above the top surface of the semiconductor substrate; and one or more external lines that have a connecting part connected with the top surface electrode and electrically connect the top surface electrode to a circuit outside the semiconductor device. The temperature detecting portion extends across the one or more transistor portions and the one or more diode portions in the longitudinal direction, and the connecting part of at least one of the external lines is arranged around the temperature detecting portion when seen from above.

Abstract: A semiconductor device is provided that has a semiconductor substrate, a drift layer of a first conductivity type formed in the semiconductor substrate, a base region of a second conductivity type formed in the semiconductor substrate and above the drift layer, and an accumulation region of the first conductivity type provided between the drift layer and the base region and having an impurity concentration higher than an impurity concentration in the drift layer, wherein the accumulation region has a first accumulation region and a second accumulation region that is formed more shallowly than the first accumulation region is and on a side of a boundary with a region that is different from the accumulation region in a planar view.

Abstract: A semiconductor device includes a control voltage generator to generate a control voltage according to a temperature section signal; and a temperature voltage output block to output a temperature voltage varying with a temperature according to the control voltage and the temperature section signal.

Abstract: A thermal management structure for a device is provided. The thermal management structure includes electroplated metal, which connects multiple contact regions for a first contact of a first type located on a first side of the device. The electroplated metal can form a bridge structure over a contact region for a second contact of a second type without contacting the second contact. The thermal management structure also can include a layer of insulating material located on the contact region of the second type, below the bridge structure.

Abstract: Systems and methods for detecting a liquid. Detection a liquid may include detecting liquid at a boundary of an area and reporting the presence of the liquid. Reporting liquid at a boundary may prevent leaking of the liquid from the area. Detecting also includes detecting liquid inside the area. The amount of liquid detected inside the boundary may relate to a range of amounts of liquid. The minimum amount of the range may represent the minimum amount of liquid that is permissible in the area prior to taking action to deal with the liquid.

Abstract: A sensor may bias a signal to have a characteristic. The characteristic of the signal may depend on a temperature of the sensor such that the characteristic of the signal is outside of a permitted range, associated with the characteristic, when the temperature of the sensor satisfies a temperature threshold. The temperature threshold may be associated with an operating temperature range of the sensor. The sensor may provide the signal having the characteristic.

Abstract: A transistor includes an emitter of a first conductivity type, base of a second conductivity type, collector of the first conductivity type, and cathode of a lateral suppression diode. The emitter is disposed at a top surface of the transistor and configured to receive electrical current from an external source. The base is configured to conduct the electrical current from the collector to the emitter. The base is disposed at the top surface of the transistor and laterally between the emitter and the collector. The collector is configured to attract and collect minority carriers from the base. The cathode of the first conductivity type is surrounded by the base and disposed between the emitter and the collector, and the cathode is configured to suppress a lateral flow of the minority carriers from the base to the collector.

Abstract: A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.

Abstract: Provided is an overheat detection circuit that is capable of quickly outputting an overheated state detection signal in an overheated state without outputting an unintended erroneous output caused by disturbance noise, such as momentary voltage fluctuations in the power supply. The overheat detection circuit includes: a temperature sensor; a comparison section; and a disturbance noise removal section configured to output an overheated state detection signal to an output section after a predetermined delay time has elapsed. The delay time is reduced in proportion to temperature.

Abstract: A determination is made if a temperature of a system has exceeded a hot threshold or a cold threshold. At room temperature, a first adjustment is determined for first nominal settings. The first nominal settings are for a first input to a first comparator. At room temperature, a second adjustment is determined for second nominal settings. The second nominal settings are for a first input to a second comparator. The temperature is monitored, during normal operation of the system, using a temperature dependent voltage with the first comparator adjusted with the first adjustment and second comparator adjusted with the second adjustment.

Abstract: Systems and methods for detecting a liquid. Detection a liquid may include detecting liquid at a boundary of an area and reporting the presence of the liquid. Reporting liquid at a boundary may prevent leaking of the liquid from the area. Detecting also includes detecting liquid inside the area. The amount of liquid detected inside the boundary may relate to a range of amounts of liquid. The minimum amount of the range may represent the minimum amount of liquid that is permissible in the area prior to taking action to deal with the liquid.

Abstract: A temperature voltage generator includes a control voltage generation circuit configured to receive a reference voltage and to output a control voltage that changes according to temperature, a temperature voltage generation circuit configured to amplify the control voltage and to output a temperature voltage that changes according to temperature, and a linear compensation circuit connected to the control voltage generation circuit and configured to improve the linearity of the temperature voltage.

Abstract: A power transistor has a semiconductor body with a bottom side and top side spaced distant from the bottom side in a vertical direction. The semiconductor body includes a plurality of transistor cells, a source zone of a first conduction type, a body zone of a second conduction type, a drift zone of the first conduction type, a drain zone, and a temperature sensor diode having a pn-junction between an n-doped cathode zone and a p-doped anode zone. The power transistor also has a drain contact terminal on the top side, a source contact terminal on the bottom side, a gate contact terminal, and a temperature sense contact terminal on the top side. Depending on the first and second conduction types the anode or cathode zone is electrically connected to the source contact terminal and the other diode zone is electrically connected to the temperature sense contact terminal.

Abstract: A system for measuring temperatures of and controlling a multi-zone heating plate in a substrate support assembly used to support a semiconductor substrate in a semiconductor processing includes a current measurement device and switching arrangements. A first switching arrangement connects power return lines selectively to an electrical ground, a voltage supply or an electrically isolated terminal, independent of the other power return lines. A second switching arrangement connects power supply lines selectively to the electrical ground, a power supply, the current measurement device or an electrically isolated terminal, independent of the other power supply lines. The system can be used to maintain a desired temperature profile of the heater plate by taking current readings of reverse saturation currents of diodes serially connected to planar heating zones, calculating temperatures of the heating zones and powering each heater zone to achieve the desired temperature profile.

Abstract: A transistor includes an emitter of a first conductivity type, base of a second conductivity type, collector of the first conductivity type, and cathode of a lateral suppression diode. The emitter is disposed at a top surface of the transistor and configured to receive electrical current from an external source. The base is configured to conduct the electrical current from the collector to the emitter. The base is disposed at the top surface of the transistor and laterally between the emitter and the collector. The collector is configured to attract and collect minority carriers from the base. The cathode of the first conductivity type is surrounded by the base and disposed between the emitter and the collector, and the cathode is configured to suppress a lateral flow of the minority carriers from the base to the collector.

Abstract: Systems and methods for detecting a liquid. Detection a liquid may include detecting liquid at a boundary of an area and reporting the presence of the liquid. Reporting liquid at a boundary may prevent leaking of the liquid from the area. Detecting also includes detecting liquid inside the area. The amount of liquid detected inside the boundary may relate to a range of amounts of liquid. The minimum amount of the range may represent the minimum amount of liquid that is permissible in the area prior to taking action to deal with the liquid.

Abstract: A semiconductor device includes a carrier substrate having at least one conductor track, at least one converter element structured at least partly from a further semiconductor substrate, and conductive structures formed on a respective converter element. The at least one converter element is electrically linked to the at least one conductor track via at least one at least partly conductive supporting element arranged between a contact side of the carrier substrate and an inner side of the converter element. The inner side is oriented toward the carrier substrate. The at least one converter element is arranged on the contact side of the carrier substrate such that the inner side of the converter element is kept spaced apart from the contact side of the carrier substrate. The at least one converter element and the conductive structures formed thereon are completely embedded into at least one insulating material.

Abstract: An IR sensor includes a suspended micro-platform having a support layer and a device layer disposed thereon. IR absorbers are disposed in or on the device layer. IR radiation received by the IR absorbers heats an on-platform junction of each of a plurality of series-connected thermoelectric devices operating in a Seebeck mode, the devices producing a voltage indicative of the received IR. Other thermoelectric devices are used to cool the platform, and a pressure sensing arrangement is used to detect loss of vacuum or pressure leaks.

Abstract: A stretchable electronic circuit that includes a stretchable base substrate having a plurality of stretchable conductors formed onto a surface thereof, with both the stretchable base substrate and conductors being bendable together about two orthogonal axes. The stretchable circuit also includes a stretchable sensor layer attached to the base substrate with a cavity formed therein which has a contact point exposing one of the plurality of stretchable conductors. The stretchable electronic circuit further includes a surface mount device (SMD) package with a conductor contact protrusion installed into the cavity, and wherein a substantially constant electrical connection is established between the conductor contact protrusion and the stretchable conductor at the contact point by tensile forces interacting between the stretchable base substrate and the stretchable sensor layer.

Abstract: Methods and apparatus for a sensor are disclosed. An oxide layer is formed on a substrate, followed by a spacer layer and a buffer layer. A photoresist layer is formed on the buffer layer over a pixel region, with an opening exposing a first part of the buffer layer. A first etching is performed to remove the first part of the buffer layer to expose a first part of the spacer layer. A second etching is performed to remove the first part of the spacer layer, the remaining buffer layer, and partially remove a second part of the spacer layer so that the result spacer layer will have an end with a shape substantially similar to a triangle, a height of the end is in a substantially same range as a length of the end.

Abstract: Disclosed is an electronic apparatus in which a thermoelectric conversion element and at least one of a photoelectric conversion element and a transistor or a diode are monolithically integrated, or which prevents interference between a p-type thermoelectric conversion unit and an n-type thermoelectric conversion unit. This electronic apparatus includes a thermoelectric conversion element (100) including a semiconductor layer of stacked heterostructure (38) which performs thermoelectric conversion using Seebeck effect and at least one of a photoelectric conversion element (102) in which at least a portion of the semiconductor layer of stacked heterostructure (38) performs photoelectric conversion and a transistor (104) or a diode having at least a portion of the semiconductor layer of stacked heterostructure (38) as an operating layer.

Abstract: The object of the present invention is to provide a method of fabricating a thermoelectric material and a thermoelectric material fabricated thereby. According to the present invention, since carbon nanotubes with no surface treatment are dispersed in the alloy, electrical resistivity decreases and electrical conductivity increases in comparison to surface-treated carbon nanotubes and an amount of thermal conductivity decreased is the same as that in the case of using surface-treated carbon nanotubes, and thus, a ZT value, a thermoelectric figure of merit, is improved. A separate reducing agent is not used and an organic solvent having reducing powder is used to improve economic factors related to material costs and process steps, and carbon nanotubes may be dispersed in the thermoelectric material without mechanical milling.

Abstract: A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.

Abstract: By incorporating germanium material into thermal sensing diode structures, the sensitivity thereof may be significantly increased. In some illustrative embodiments, the process for incorporating the germanium material may be performed with high compatibility with a process flow for incorporating a silicon/germanium material into P-channel transistors of sophisticated semiconductor devices. Hence, temperature control efficiency may be increased with reduced die area consumption.

Abstract: A semiconductor device that is equipped with a semiconductor substrate, a composite metal film, and a detection terminal is provided. The composite metal film is formed on a surface or a back face of the semiconductor substrate, and has a first metal film, and a second metal film that is joined to the first metal film and is different in Seebeck coefficient from the first metal film. The detection terminal can detect a potential difference between the first metal film and the second metal film.

Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.

Abstract: An active sensor apparatus includes an array of sensor elements arranged in a plurality of columns and rows of sensor elements. The sensor apparatus includes a plurality of column and row thin film transistor switches for selectively activating the sensor elements, and a plurality of column and row thin film diodes for selectively accessing the sensor elements to obtain information from the sensor elements. The thin film transistor switches and thin film diodes are formed on a common substrate.

Abstract: According to an embodiment, a semiconductor device includes a semiconductor substrate and an amorphous semi-insulating layer on the semiconductor substrate.

Abstract: A method for fabricating a microelectronic assembly including a built-in TEC, a microelectronic assembly including a built-in TEC, and a system including the microelectronic assembly. The method includes providing a microelectronic device, and fabricating the TEC directly onto the microelectronic device such that there is no mounting material between the TEC and the microelectronic device.

Abstract: A thermal detector includes a substrate, a thermal detection element and a support member. The substrate has a recess part with a bottom surface of the recess part being a curved light-reflecting surface. The thermal detection element has a light-absorbing film. The support member supports the thermal detection element. The substrate and the support member are arranged to form a hollow part therebetween. The support member includes a light-absorbing part in which impurities are dispersed in polycrystalline silicon with the light-absorbing part being arranged in at least a part of a surface of the support member facing toward the hollow part so that the light-absorbing part being irradiated by light.

Abstract: Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.

Abstract: According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.

Abstract: A thermopile sensor array is provided. The thermopile sensor array may include multiple pixels formed by multiple thermopiles arranged on a single common shared support membrane. A separation between the edge of the shared support membrane and the outermost thermopile(s) may be included to provide additional thermal isolation between the thermopile and an underlying silicon substrate.

Abstract: Exemplary embodiments of the invention include a thermoelectric material having an aligned polarization field along a central axis of the material. Along the axis are a first atomic plane and a second atomic plane of substantially similar area. The planes define a first volume and form a single anisotropic crystal. The first volume has a first outer surface and a second outer surface opposite the first outer surface, with the outer surfaces defining the central axis passing through a bulk. The bulk polarization field is formed from a first electrical sheet charge and a second opposing electrical sheet charge, one on each atomic plane. The opposing sheet charges define a bulk polarization field aligned with the central axis, and the bulk polarization field causes asymmetric thermal and electrical conductivity through the first volume along the central axis.

Abstract: A method for manufacturing a thermoelectrical device includes providing a substrate and also forming at least one deep trench into the substrate. The method further includes forming at least one thermocouple which comprises two conducting paths, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate.

Abstract: A pressing member is prevented from being damaged by heat, heat dissipation through the pressing member on the higher-temperature side and reduction in thermoelectric conversion efficiency due to it are suppressed, and good electrical conduction is achieved even if thermoelectric conversion elements and electrodes are not cemented through a binder. A lower-temperature side electrode 6 is projecting toward a higher-temperature side substrate 8 and the lower-temperature side electrode 6 is formed with slope faces 6a, 6b, and an angle ? of each of the slope face to a surface of a lower-temperature side substrate 7 is an acute angle.

Abstract: A semiconductor structure is provided that can be used for cooling, heating, and power generation. A first region of the semiconductor structure has a first length and comprises a first semiconductor material doped at a first concentration with a first dopant. A second region is disposed adjacent to the first region so as to define a first interface, has a second length which is longer than the first length, and comprises a second semiconductor material doped at a second concentration with a second dopant. At least one of the first material, second material, first concentration, second concentration, first length, second length, first dopant, and second dopant is selected to create, at the first interface, a forward electrical potential step having a barrier height dependent at least in part on an average temperature (T) of the semiconductor structure, e.g., a range of approximately 3-10 ?BT, where ?B is the Boltzmann constant.

Abstract: Conventional “on-chip” or monolithically integrated thermocouples are very mechanically sensitive and are expensive to manufacture. Here, however, thermocouples are provided that employ different thicknesses of thermal insulators to help create thermal differentials within an integrated circuit. By using these thermal insulators, standard manufacturing processes can be used to lower cost, and the mechanical sensitivity of the thermocouple is greatly decreased. Additionally, other features (which can be included through the use of standard manufacturing processes) to help trap and dissipate heat appropriately.

Abstract: Provided is a high-power device having a thermocouple (thermoelectric couple) for measuring the temperature of a transistor constituting a high-power device. The high-power device includes a heating element, a thermocouple formed adjacent to the heating element, and a dielectric body formed between the heating element and the thermocouple.

Abstract: A method for applying at least one layer, selected from diffusion barriers, further protective layers, adhesion promoters, solders and electrical contacts, onto thermoelectric materials, is characterized by the fact that the at least one layer is rolled or pressed onto the thermoelectric material at a temperature at which the thermoelectric material is flowable.