Abstract: A solid-state energy converter with a semiconductor or semiconductor-metal implementation is provided for conversion of thermal energy to electric energy, or electric energy to refrigeration. In n-type heat-to-electricity embodiments, a highly doped n* emitter region made of a metal or semiconductor injects carriers into an n-type gap region. A p-type layer is positioned between the emitter region and gap region, allowing for discontinuity of corresponding Fermi-levels and forming a potential barrier to sort electrons by energy. Additional p-type layers can optionally be formed on the collector side of the converter. One type of these layers with higher carrier concentration (p*) serves as a blocking layer at the cold side of the converter, and another layer (p**) with carrier concentration close to the gap reduces a thermoelectric back flow component. Ohmic contacts on both sides of the device close the electrical circuit through an external load to convert heat to electricity.

Abstract: The invention relates to a bolometric detector comprising a receiving antenna (2a, 2b, 2c, 2d) for collecting electromagnetic waves and a resistive load for converting the power of electromagnetic waves into heating power. The resistive load is the load resistor of the antenna. The invention is more particularly applied to the detection of objects in “all-weather” conditions (rain, fog, smoke, etc).

Abstract: Environmental sensors and other bodies, together with associated lead wires, are mounted to a oxidizable substrate for high temperature applications by means of a reacted borosilicate mixture (RBM) that secures the body relative to the substrate via of an oxide interface formed between the RBM and substrate during a high temperature reaction process. An oxide interface is also formed with oxidizable bodies to provide further mounting strength. The RBM is a B2O3—SiO2 mixture, with the B2O3 portion a function of the reaction temperature and desired bonding strength and viscosity.

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1-xN(x>0.69) connected via electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer, which can be a thin film of W, WC or W2C less than 10 micrometers thick, have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. Applications include temperature sensors, pressure sensors, chemical sensors and high temperature and high power electronic circuits. Without the mounting layer, a thin film piezoelectric layer of SiC, AlN and/or AlxGa1-xN(x>0.69), less than 10 micrometers thick, can be secured to the die.

Abstract: Disclosed is a foil segment for a thermoelectric generator comprising a top plate disposed in spaced relation above a bottom plate. An array of the foil segments is perpendicularly disposed in side-by-side arrangement between and in thermal contact with the bottom and top plates. Each foil segment comprises a substrate having a thickness of about 7.5-50 microns, opposing front and back substrate surfaces and a series of spaced alternating n-type and p-type thermoelectric legs disposed in parallel arrangement on the front substrate surface. Each of the n-type and p-type legs is formed of a bismuth telluride-based thermoelectric material having a thickness of about 5-100 microns, a width of about 10-100 microns and a length of about 100-500 microns. The alternating n-type and p-type thermoelectric legs are electrically connected in series and thermally connected in parallel such that a temperature differential between the bottom and top plates results in the generation of power.

Abstract: A temperature-sensing diode has an anode and a cathode disposed on top and an isolated, metallization layer on bottom of a diode die. For example, the temperature-sensing diode is a Schottky diode without a guard ring and any passivation, making the temperature-sensing diode inexpensive to fabricate, easy to attach in close proximity to a heat-generating device and resistant to electronic noise from high power devices and stray electronic signals. The location of the anode and cathode on the same surface of the diode package provides for easy connection, such as by wire bonds, with an external circuit for providing a constant forward bias current and for amplification of the output voltage signal by an operational amplifier. The isolated, metallization layer provides for easy attachment of the temperature-sensing diode in close proximity to heat-generating power devices. A dielectric film isolates the temperature-sensing diode from the metallization layer and underlying substrate.

Abstract: A SiC die with Os and/or W/WC/TiC contacts and metal conductors is encapsulated either alone or on a ceramic substrate using a borosilicate (BSG) glass that is formed at a temperature well below upper device operating temperature limits but serves as a stable protective layer above the operating temperature (over 1000° C., preferably >1200° C.). The glass is preferably 30-50% B2O3/70-50% SiO2, formed by reacting a mixed powder, slurry or paste of the components at 460°-1000° C. preferably about 700° C. The die can be mounted on the ceramic substrate using the BSG as an adhesive. Metal conductors on the ceramic substrate are also protected by the BSG. The preferred ceramic substrate is AlN but SiC/AlN or Al2O3 can be used.

Abstract: A thermoelectric module with a simple structure with less breakage by thermal stress is provided. For this purpose, the thermoelectric module includes p-type and n-type thermoelectric elements (13, 14) which are alternately placed, and outer electrodes (15) and inner electrodes (16), which are alternately placed between the thermoelectric elements (13, 14), and at least part of at least either one of the outer electrode (15) or the inner electrode (16) has a shape approximately along an object which exchanges heat with the electrodes (15, 16). The inner electrodes (16) surround an object which exchanges heat with the electrodes (15, 16).

Abstract: The present invention provides a temperature sensor that has high sensitivity and operates in a wide range of temperatures and VDD levels. The temperature sensor may be tailored to the application according to the conditions of temperature and VDD. The temperature sensor comprises five PNP junctions in series. The temperature sensor includes a switch that is configured to block out a predetermined number of the junctions. For example, two junctions may be blocked out. Depending on the state of the switch, the temperature sensor either blocks out a predetermined number of the junctions or operates with all of the junctions active. Blocking out the number of active junctions reduces the sensitivity of the temperature sensor for applications at low temperature and low VDD. The switch may be controlled automatically, or the switch may be hardwired. When the switch is adjusted automatically, a circuit could adjust the switch in response to the temperature information and Vdd conditions.

Abstract: A device for detecting a magnetic field, e.g., a magnetic field meter and an ammeter are described, the device having a first lateral magnetotransistor and a second lateral magnetotransistor, and in which the first and the second lateral magnetotransistors are complementary.

Abstract: A semiconductor device in which electro-thermal conversion elements and switching devices for flowing currents through the elements are integrated on a first conductive type semiconductor substrate. The switching devices are insulated gate type field effect transistors having a second conductive type first semiconductor region on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region and for adjoining the first semiconductor region; a second conductive type source region on the surface of the second semiconductor region; a second conductive type drain region on the surface of the first semiconductor region; and gate electrodes on the channel region with a gate insulator film between them. The second semiconductor region is formed by a semiconductor having an impurity concentration higher than that of the first semiconductor region, and is disposed between two adjacent drain regions, separating them in a traverse direction.

Abstract: Various embodiments of a semiconductor-on-insulator substrate incorporating a Peltier effect heat transfer device and methods of fabricating the same are provided. In one aspect, a circuit device is provided that includes an insulating substrate, a semiconductor structure positioned on the insulating substrate and a Peltier effect heat transfer device coupled to the insulating substrate to transfer heat between the semiconductor structure and the insulating substrate.

Abstract: A thermoelectric semiconductor has a P-type semiconductor and an N-type semiconductor disposed in parallel. A heat absorbing side of the thermoelectric semiconductor and a substrate that has an optical element mounted on its upper surface are disposed on the same plane. A heat radiation side of the thermoelectric semiconductor is disposed such that a direction from the heat absorbing side to the heat radiation side of the thermoelectric semiconductor is parallel with the upper surface of the substrate. Based on this arrangement, it is possible to set the environmental temperature of an optical module to the same level as the operation temperature of a laser diode.

Abstract: A semiconductor component with an integrated circuit has a cooling body as a heat sink and a temperature sensor thermally connected thereto, whose resistance is dependent on temperature. The temperature sensor contains a thin film measuring resistor, which is applied to an electrically insulating surface of a foil-like substrate, and the total thickness of the temperature sensor lies in a range of about 10 &mgr;m to 100 &mgr;m. The thin film measuring resistor is formed as a planar component, with the temperature sensor being arranged between the integrated circuit and the cooling body. The thin film measuring resistor is provided on one side with a thermal coupling layer bordering on the cooling body, while on the other side the resistor has a substrate bordering on a heat distributor, which at least partially surrounds the integrated circuit.

Abstract: A Seebeck effect thermal sensor is formed in an integrated fashion with a power-dissipating device such as a power MOSFET. The integrated device generates a temperature difference between a relatively cold peripheral area and a relatively warm central area, the temperature difference having a known relationship to electrical operating conditions of the device. A structure for a power MOSFET includes two side-by-side arrays of source/drain diffusions. The Seebeck sensor has warm junctions at the central area and cold junctions at the peripheral area, and generates an electrical output signal having a known relationship to the temperature difference between the peripheral and central areas to provide an indication of the electrical operating conditions of the device. One Seebeck sensor includes alternating metal and polysilicon traces, wherein the polysilicon traces lie between source and drain diffusions of a power MOSFET just as do active polysilicon gates.

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1-xN(x>0.69) connected via electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature senensors, pressure sensors, chemical sensors and high temperature and high power electronic circuits.

Abstract: An arrangement for measuring the temperature of an electronic circuit, the arrangement comprising a measuring element being in close thermal communication with the electronic circuit, which measuring element comprises a temperature-dependent component in each one of at least two current paths and whose current-voltage characteristic is dependent on the temperature in accordance with a different predetermined function in at least two of the current paths, which temperature-dependent components can each be impressed with a predetermined current for generating a voltage dependent on the temperature at each one of the temperature-dependent components, and an evaluation circuit for forming an output voltage representing a measure of the temperature of the electronic circuit from the difference of the voltages at the temperature-dependent components.

Abstract: A high voltage semiconductor device includes a drain region disposed within a semiconductor substrate. The semiconductor device further includes a field oxide layer disposed outwardly from the drain region of the semiconductor substrate. The semiconductor device also includes a floating ring structure disposed inwardly from at least a portion of the field oxide layer. In one particular embodiment, a device parameter degradation associated with the semiconductor device comprises one (1) percent or less after approximately five hundred (500) seconds of accelerated lifetime operation.

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1−xN(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.

Abstract: An object is to provide a semiconductor device which is free from such voltage oscillation as may cause malfunction of peripheral equipment. In a semiconductor device having a pin structure, the impurity concentration gradient in an n+ layer (103) serving as a buffer layer is set equal to or less than 2×1018cm−4. Then, when a reverse bias voltage is applied and a depletion layer reaches the n+ layer (103), the expansion of the depletion layer is prevented from rapidly stopping and the voltage oscillation can be suppressed.

Abstract: A semiconductor device has plural output circuits. Each of the plural output circuits has a semiconductor switching element and a heat protection circuit including a diode. When the heat protection circuit in a predetermined output circuit detects that heat emitted from the semiconductor switching element in the predetermined output circuit, the heat protection circuit turns off the semiconductor switching element in the predetermined output circuit. The plural output circuits are thermally isolated from each other by a trench and an insulation film. The trench and the insulation film prevent the heat from being transmitted from the predetermined output circuit to an adjacent output circuit. Therefore, even if the heat, by which the semiconductor switching element in the predetermined output circuit is turned off, is generated at the predetermined output circuit, the semiconductor switching element in the adjacent output circuit is not turned off by the heat.

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1−xN(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.

Abstract: In a thermoelectric generator or Peltier arrangement having a thermoelectrically active semiconductor material constituted by a plurality of metals or metal oxides the thermoelectrically active material is selected from a p- or n-doped semiconductor material constituted by a ternary compound of the general formula (I)

Abstract: The electric power breaker for breaking the electric power is placed on the midpoint of the electric power line from the battery power supply, and the electric power line is extracted from the electric power breaker. In addition, the electric power supply terminal is placed on the midpoint on the electric power line, from which the electric power is supplied to the individual electric load. The electric power distribution and the electric power supply operation to the electric loads are controlled by the multiplex communication. A semiconductor device having a self protection function is used as the switching device for supplying the electric power. The electric power line covered by the electric conductive material is arranged in a loop topology so as to start from the connection point to the battery and pass through the designated positions in the vehicle and return to the battery.

Abstract: At least one forward-biased semiconductor diode having a potential barrier is used as a temperature sensor whose sensitivity can be finely adjusted. An operational amplifier circuit (A1) is used to apply a bias voltage of DC or rectangular waveform to a semiconductor diode (D) having a potential barrier used as a temperature sensor. In view of the fact that the temperature sensitivity of the semiconductor diode (D) depends on the height of its potential barrier, the forward bias voltage applied from a bias circuit (2) directly to the semiconductor diode (D) is finely adjusted to obtain desired temperature sensitivity. The output voltage of the sensor is associated with a current, having an exponential temperature dependence, which flows in the semiconductor diode (D) with the forward bias being fixed.

Abstract: The invention relates to a device and a method for detecting the reliability of integrated semiconductor components. The device includes a carrier substrate for receiving an integrated semiconductor component that will be examined, a heating element, and a temperature sensor. The temperature sensor has at least a portion of a parasitic functional element of the semiconductor component. As a result, reliability tests can be carried out in a particularly accurate and space-saving manner.

Abstract: A power semiconductor device includes a power semiconductor element formed on a substrate and a temperature detector including a temperature detecting diode element having at least one diode for detecting temperature formed on the substrate. Additionally, the temperature detecting diode includes two regions having different conductive type each other. The capacitance between one region and base region of the semiconductor element is as large as capacitance between another region and the base region.

Abstract: In a semiconductor device in which a plurality of electro-thermal conversion elements and a plurality of switching devices for flowing electric currents through the plural electro-thermal conversion elements are integrated on a first conductive type semiconductor substrate, the switching devices are insulated gate type field effect transistors severally comprising: a second conductive type first semiconductor region formed on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region, the second semiconductor region being formed to adjoin the first semiconductor region; a second conductive type source region formed on the surface side of the second semiconductor region; a second conductive type drain region formed on the surface side of the first semiconductor region; and gate electrodes formed on the channel region with a gate insulator film put between them; and the second semiconductor region is formed by a semiconductor having a

Abstract: An integrated circuit having at least one micromechanical element thereon is described comprising a support substrate, a sensor element electrically connected to a logic circuit, and the logic circuit electrically connected to a semiconductor visual display element.

Abstract: An infrared detector device having a PN junction formed by a first semiconductor material region doped with rare earth ions and by a second semiconductor material region of opposite doping type. The detector device comprises a waveguide formed by a projecting structure extending on a substrate, including a reflecting layer and laterally delimited by a protection and containment oxide region. At least one portion of the waveguide is formed by the PN junction and has an end fed with light to be detected. The detector device has electrodes disposed laterally to and on the waveguide to enable efficient gathering of charge carriers generated by photoconversion.

Abstract: Apparatus, specifically a circuit (100, 200), for a highly accurate, low cost temperature sensor, particularly one using silicon thermometry and which can be implemented by an application specific integrated circuit, that also possesses a high degree of linearity and a wide dynamic range. The inventive circuit advantageously utilizes either a mixed-signal approach or a digital core and provides independent adjustment, through two point calibration, of slope and ambient output offset values, with a zero offset adjustment advantageously accomplished through use of a digital tear. Specifically, given the inherent linearity of silicon thermometry, zero offset and desired output voltage are set, independently of each other, at a first predefined ambient calibration temperature as effectively two separate offset values, while slope (span) is set at a second predefined calibration temperature (typically a full scale temperature) different from the first temperature.

Abstract: In a semiconductor temperature detecting circuit using semiconductor temperature sensors each comprising bipolar transistors connected in Darlington connection, to provide a semiconductor temperature detecting circuit capable of automatically compensating for a dispersion in fabrication of reference voltage for comparing outputs of temperature sensors, the semiconductor temperature detecting circuit includes a first and a second semiconductor temperature sensor each having bipolar transistors connected in Darlington connection, the steps of for supplying different constant currents (I and n×I) to the first and the second semiconductor temperature sensors and detecting temperature based on a corresponding relationship (FIG. 2) between a ratio of output voltages of the first and the second semiconductor temperature sensors and the temperature.

Abstract: A linear temperature sensor that incorporates passive bipolar semiconductor devices and is capable of high accuracy over a very wide temperature range. The passive bipolar semiconductor device splits a voltage drop between the bipolar semiconductor and a resistor, such that the voltage drop varies approximately linearly in negative dependence on temperature. Optionally the linearity may be improved by providing sufficient current to produce a self-heating effect which compensates for non-linear deviations in performance at low temperatures.

Abstract: In a sensor having a membrane structure, a sensor chip (silicon substrate) is provided with a through hole that is open on both upper and lower surfaces of the silicon substrate. A sensor element having a membrane structure is formed on the upper surface of the silicon substrate to close the through hole on the upper surface. The lower surface of the silicon substrate is bonded to a stem through adhesive to define a communication passage through which an inside and an outside of the through hole communicate with each other. Accordingly, the sensor can exhibit high reliability.

Abstract: A plurality of n-type bar-shaped devices (51) consisting of an n-type thermoelectric semiconductor and a plurality of p-type bar-shaped devices (52) consisting of a p-type thermoelectric semiconductor are regularly disposed or fixed through an insulating layer (50) to form a thermoelectric device block (53). End portions of the n-type bar shaped device (51) and the p-type bar-shaped device (52) are connected with an interconnection conductor (58a) on an upper surface (53a) and a lower surface (53b), which will be interconnecting end faces of the thermoelectric device block (53), to form a plurality of thermocouples connected in series.

Abstract: The electric power breaker for breaking the electric power is placed on the midpoint of the electric power line from the battery power supply, and the electric power line is extracted from the electric power breaker. In addition, the electric power supply terminal is placed on the midpoint on the electric power line, from which the electric power is supplied to the individual electric loads. The electric power distribution and the electric power supply operation to the electric loads are controlled by the multiplex communication. A semiconductor device having a self protection function is used as the switching device for supplying the electric power. The electric power line covered by the electric conductive material is arranged in a loop topology so as to start from the connection point to the battery and pass through the designated positions in the vehicle and return to the battery.

Abstract: A termoelectric device and method for manufacturing the thermoelectric device.

Abstract: An integrated environment temperature sensor device provides improved temperature sensitivity by using a diode as the sensing element. The integrated sensor device comprises a heater element for creating a fixed quantity of heat energy. The sensor device also comprises an integrated circuit diode which receives the fixed quantity of heat energy from the heater element. The integrated circuit diode has a constant forward bias current applied thereto and a change in environment temperature is reflected in a voltage change across the integrated circuit diode. The integrated circuit diode further comprises an electrically insulating layer positioned substantially between the heater element and the integrated circuit diode for electrically insulating the two from each other.

Abstract: The invention concerns an analysis device including at least one chip (110) equipped with a plurality of analysis electrodes (112). In accordance with the invention, the device also includes means of individual heating (150) of the analysis electrodes. The invention can be used for the analysis of chemical or biological products, for example in an antigen/antibody recognition or DNA/DNA analysis.

Abstract: An integrated circuit chip (10, 50, 100) may comprise an integrated circuit (14, 54, 108, 110, 112) formed in a semiconductor layer (12, 52, 102). A thermal contact (16, 56, 116) may be formed at a high temperature region of the integrated circuit (14, 54, 108, 110, 112). A thick plated metal layer (40, 80, 140) may be generally isolated from the integrated circuit (14, 54, 108, 110, 112). The thick plated metal layer (40, 80, 140) may include a base (42, 82, 142) and an exposed surface (44, 84, 144) opposite the base (42, 82, 142). The base (42, 82, 142) may be coupled to the thermal contact (16, 56, 116) to receive thermal energy of the high temperature region. The exposed surface (44, 84, 144) may dissipate thermal energy received by the thick plated metal layer (40, 80, 140).

Abstract: An apparatus and method for directly measuring the operating temperature of a semiconductor device. A temperature sensor is placed directly on the substrate containing the device whose temperature is of interest. The circuitry used to process the sensor signals is on a separate substrate. Because the sensor is on the same substrate as the device of interest, noise is produced in the sensor signals as a result of electrons injected into the substrate by the device. The present invention includes methods for cancelling the noise and error in the temperature measurements to provide a very accurate determination of the device's operating temperature.

Abstract: A power transistor device, for example a MOSFET or an IGBT, comprises a semiconductor body (10) which accommodates an array (11) of parallel device cells (1a) in which heat is generated in operation of the device. A hot-location temperature sensor (Mh) is located inside the array (11), and a cool-location temperature sensor (Mc) is located outside the array (11). These sensors each comprises at least one sensor cell (1b; 1c) which is of the same transistor type as the device cells (1a). The sensor cells (1b; 1c) have a cellular region structure (12,13,14,15) similar to that of the device cells (1a), but each sensor (Mh; Mc) has a respective output electrode (31; 32) separate from electrodes (22,23,25) of the device cells (1a).

Abstract: A MOSgated device has a plurality of spaced polysilicon diodes on top of a thin insulation layer atop a MOSgated device die. A constant forward current through the diodes produces a voltage drop which is related to the die temperature. The anode and cathode ends of the diode string are connected to the metal pads on the die surface. A first capacitor connects the calkode terminal of the string to the MOSgated device drain electrode and a second capacitor is connected across the anode and cathode ends of the diode string. Both the anode and cathode are unaffected by noise at the drain electrode. The diode string is located within a narrow strip along the die center and is separated from the MOSFET active area by a very narrow termination region which excludes a metal bus.

Abstract: A cold end and a hot end are demarcated in a first thermoelectric semiconductor member. A first member made from metal or a semiconductor is connected to the cold end of the first thermoelectric semiconductor member. The first member is made from a material wherein, heat absorption occurs when first carriers comprising either electrons or holes are injected from the first member into the first thermoelectric semiconductor member. The first carriers transported to the hot end of the first thermoelectric semiconductor member are gathered into a light-emitting region. The light-emitting region is made from a semiconductor material. In this light-emitting region, light emission due to recombination between electrons and holes occurs.

Abstract: A polysilicon gate layer, a first n.sup.+ diffusion region serving as a drain region, and a second n.sup.+ diffusion region serving as a source region form a MOSFET, and then an operating point of the MOSFET is set into its saturation region by connecting a gate layer and a drain region of the MOSFET. The first and second n.sup.+ diffusion regions provide a first and a second leakage paths, respectively. A temperature sensor can be provided by use of the event that a leakage current flowing through the second leakage path is varied according to a substrate temperature. According to such configuration, scatter of detected temperatures due to scattering in manufacturing process can be reduced even if all scattering parameters in manufacturing process are considered. In addition, an required area of the temperature sensor can be made smaller since a high resistance value is not needed.

Abstract: A vertical N-channel trenched-gate power MOSFET includes an integral temperature detection diode. The diode includes an N+ region which serves as the cathode and which is formed within a tub of P-type material, which serves as the anode. The N+ region is separated from the trench. The anode of the temperature detection diode may be shorted to the source or may be separately biased. The temperature of the MOSFET is monitored by supplying a current through the diode in the forward direction and measuring the voltage across the forward-biased diode. In an alternative embodiment, a pair of N+ regions are formed within the P-tub, constituting a diode pair, and the temperature is detected by monitoring the difference in the voltages across the diodes. An overtemperature detection unit compares the voltage across the diode or diodes with a reference voltage and provides an output which can be used to turn the MOSFET off when the temperature reaches a predetermined level.

Abstract: A semiconductor structure having a temperature sensor placed in close proximity to gate and source and/or drain electrodes. The sensor is compatible with conventional semiconductor processing and is typically made from doped polysilicon having a large temperature coefficient of resistivity. At least one sensor may be placed under, but insulated from, source or drain electrodes to protect against high electric fields. The sensor is also compatible with bipolar semiconductor structures.

Abstract: A field-effect-controllable power semiconductor component, such as a power MOSFET or IGBT, includes a semiconductor body, at least one cell field, a multiplicity of mutually parallel-connected transistor cells disposed in the at least one cell field, and at least two temperature sensors integrated in the semiconductor body and disposed at different locations from each other on the semiconductor body. Thus a temperature gradient between a strongly heated local region of the semiconductor body and one of the temperature sensors is reduced and a response time in the event of an overload is shortened.

Abstract: An integrated circuit testing device and method for verifying functionality of an integrated circuit semiconductor device employs an operation checking circuit at an input/output of an integrated circuit and a thermally sensitive resin layer applied on the operation checking circuit unit. A transistor is used as a heat generating element for identifying abnormalities determined during evaluation of the integrated circuits such that when an abnormality is detected, the transistor receives a large current flow causing heat to be dissipated which in turn causes a change in the color of the thermally sensitive resin.

Abstract: A diode suited for absorbing a surge which includes a semiconductor substrate, a pn junction defined in the semiconductor substrate, and an exothermic body adjacent to the pn junction which leads the pn junction to the Zener breakdown under an overcurrent is disclosed. This diode is improved in a characteristic against a surge utilizing the secondary breakdown and prevents the yield from lowering due to inconstancy in resistivity of the wafer used.