Abstract: An integrated circuit (IC) device includes a chip having a semiconductor substrate and a thermoelectric module embedded in the semiconductor substrate, where the thermoelectric module includes a first semiconductor structure electrically connected to a second semiconductor structure, where a bottom portion of thermoelectric module extends through a thickness of the semiconductor substrate, and where the first semiconductor structure and the second semiconductor structure include dopants of different conductivity types.

Abstract: Methods, apparatus, systems and articles of manufacture to trim temperature sensors are disclosed. An example method includes: sampling a first value indicative of a temperature of a first die of a multi-chip module (MCM) with a first temperature sensor, the first die including a first transistor having a channel including a first material; and calibrating a second temperature sensor configured to sample a second value indicative of a temperature of a second die including a second transistor have a second channel including a second material, the calibrating based on the first value.

Abstract: A semiconductor device comprises a lead, a board, and an electrically conductive layer on the board. The lead comprises a longitudinal axis and is soldered to the electrically conductive layer. The semiconductor device further comprises a first solder dam edge and a second solder dam edge, each positioned on the lead not more than 10 mils apart from each other along the longitudinal axis.

Abstract: A package structure and its manufacturing method are provided. The package structure includes a substrate with a recess, and a first MEMS chip, a first intermediate chip, a second MEMS chip and a first capping plate sequentially formed on the substrate. The lower surface of the first MEMS chip has a first sensor or a microactuator. The upper surface of the second MEMS chip has a second sensor or a microactuator. The first intermediate chip has a through-substrate via, and includes a signal conversion unit, a logic operation unit, a control unit, or a combination thereof. The package structure includes at least one of the first sensor and the second sensor.

Abstract: A test method and device for a contact resistor are provided, configured to test a contact resistor of a metal-oxide-semiconductor (MOS) transistor. The method includes: a resistance value per area and a temperature coefficient of resistance of the contact resistor are acquired; and a target resistance value of the contact resistor is determined according to the resistance value per area, the temperature coefficient of resistance, and an area of the contact resistor.

Abstract: A semiconductor module includes: a switching device including a gate pad; an output unit including an output pad connected with the gate pad of the switching device through a wire and outputting a drive signal from the output pad to the switching device; a temperature protection circuit detecting temperature and performing protection operation; and a heat conduction pattern connected with the output pad, extending from the output pad toward the temperature protection circuit, and conducting heat generated at the switching device to the temperature protection circuit.

Abstract: A thermal chamber includes a cavity that is enclosed by sides and one or more ports that expose the cavity within the thermal chamber. Each of the one or more ports is configured to receive a temperature control component having a solid physical structure and configured to transfer thermal energy to and from an electrical device exposed via the cavity. The thermal chamber includes a bottom side open area of the thermal chamber located below the one or more ports. The bottom side open area is configured to allow the temperature control component to contact the electrical device that is exposed via the bottom side open area.

Abstract: The present disclosure is a infrared sensor capable of being integrated into a IR focal plane array. It includes of a CMOS based readout circuit with preamplification, noise filtering, and row/column address control. Using either a microbolometer device structure with either a thermal sensing element of vanadium oxide or amorphous silicon, a nanocomposite is fabricated on top of either of these materials comprising aligned or unaligned carbon nanotube films with IR trans missive layer of silicon nitride followed by one to five monolayers of graphene. These layers are connected in series minimizing the noise sources and enhancing the NEDT of each film. The resulting IR sensor is capable of NEDT of less than 1 mK. The wavelength response is from 2 to 12 microns. The approach is low cost using a process that takes advantage of the economies of scale of wafer level CMOS.

Abstract: An electronic device, a lead frame, and a method, including providing a lead frame with a Y-shaped feature having branch portions connected to a dam bar in a prospective gap in an equally spaced repeating lead pitch pattern, and a set of first leads extending parallel to one another along a first direction and spaced apart from one another along a second direction in lead locations of the repeating lead pitch pattern, attaching a semiconductor die to a die attach pad of the lead frame, attaching bond wires between bond pads of the semiconductor die, and the first leads, enclosing first portions of the first leads, the die attach pad, and a portion of the semiconductor die in a package structure, and performing a dam bar cut process that cuts through portions of the dam bar between the lead locations of the repeating lead pitch pattern.

Abstract: In a described example, an apparatus includes: a package substrate including a die pad configured for mounting a semiconductor die, a first lead connected to the die pad, and a second lead and a third lead; and a semiconductor die including a temperature sensor mounted on the die pad. The semiconductor die includes a first metallization layer being a metallization layer closest to the active surface of the semiconductor die, and successive metallization layers overlying the previous metallization layer, the metallization layers including a respective conductor layer in a dielectric material for the particular metallization layer and conductive vias; and the temperature sensor formed of the conductor layer in an uppermost metallization layer and coupled to the second lead and to the third lead. The semiconductor die includes a high voltage ring formed in the uppermost metallization layer, spaced from and surrounding the temperature sensor.

Abstract: Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.

Abstract: Operations for integrating thermoelectric devices in Fin FET technology may be implemented in a semiconductor device having a thermoelectric device. The thermoelectric device includes a substrate and a fin structure disposed on the substrate. The thermoelectric device includes a first connecting layer and a second connecting layer disposed on opposing ends of the fin structure. The thermoelectric device includes a first thermal conductive structure thermally and a second thermal conductive structure thermally coupled to the opposing ends of the fin structure. The fin structure may be configured to transfer heat from one of the first thermal conductive structure or the second thermal conductive structure to the other thermal conductive structure based on a direction of current flow through the fin structure. In this regard, the current flow may be adjusted by a power circuit electrically coupled to the thermoelectric device.

Abstract: Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

Abstract: The present disclosure relates generally to the field of energy transfer mapping, including fixtures with two-dimensional and three-dimensional sensor arrays. In particular, the present disclosure relates to devices and methods for mapping of energy transfer from and/or to an instrument inserted within and/or into body tissue, including the depths and patterns of penetration and/or amounts of energy transfer to and/or from an instrument delivered within biological tissue or materials that mimic biological tissue, including within fixtures with three-dimensional temperature sensor arrays configured to simulate anatomical geometries such as the gastrointestinal (GI) or respiratory tract.

Abstract: An integrated circuit (IC) includes functional logic therein that can be enabled by application of a predefined thermal cycle. The IC includes an enabling fuse operatively coupled to the functional logic, the functional logic being disabled unless enabled by activation of the enabling fuse. A set of thermal sensors are arranged in a physically distributed manner through at least a portion of the IC. A test control macro operatively couples to the set of thermal sensors and the enabling fuse for activating the enabling fuse to enable the functional logic in response to application of a thermal cycle that causes the set of thermal sensors to sequentially experience a thermal condition matching a thermal sequence enabling test. A related method and system for applying the predefined thermal cycle are also provided.

Abstract: A functional element includes functional titanium oxide. The functional titanium oxide includes crystal grains of one or more of ?-phase trititanium pentoxide (?-Ti3O5) and ?-phase trititanium pentoxide (?-Ti3O5). The functional titanium oxide includes the property that at least a portion of crystal grains of one or more of ?-phase trititanium pentoxide (?-Ti3O5) and ?-phase trititanium pentoxide (?-Ti3O5) changes into crystal grains of titanium oxide (TiO2) when the functional titanium oxide is heated to 350° C. or higher.

Abstract: A system and a method of diagnosing abnormality of a main control unit, in which an auxiliary control unit for diagnosing an abnormal operation of a main control unit is additionally included in a battery management system including one or more battery management modules and the main control unit controlling the battery management module, thereby more stably driving the battery management system.

Abstract: A capacitive gas sensor in which a second electrode layer made of a nano-carbon material entangled to be three-dimensionally reticulated and a gas-sensitive film are not separated from each other. A capacitive gas sensor includes a substrate; a first electrode layer formed on the substrate; a gas-sensitive film formed on the first electrode layer and having air permeability; and a second electrode layer formed on the gas-sensitive film to be opposed to the first electrode layer and made of a nano-carbon material entangled to be three-dimensionally reticulated. The capacitive gas sensor also includes a reinforcing resin layer having air permeability and disposed at least on the second electrode layer.

Abstract: Interconnect structures having enhanced reliability is provided in which an electrically conductive structure having a line portion and a via portion is formed utilizing a subtractive process. In some embodiments, a non-conductive barrier liner is formed on physically exposed sidewalls of the via portion and physically exposed sidewalls and a topmost surface of the line portion of the electrically conductive structure. An electrically conductive metal cap is formed on a topmost surface of the via portion of the electrically conductive structure. In other embodiments, a conductive barrier spacer is formed on physically exposed sidewalls of the via portion and physically exposed sidewalls of the line portion of the electrically conductive structure. An electrically conductive metal cap is formed on a topmost surface of the via portion of the electrically conductive structure.

Abstract: An electronics device includes a power semiconductor device including a temperature detection diode, a first semiconductor integrated circuit device including a detection circuit for detecting VF from the temperature detection diode and a second semiconductor integrated circuit device. The second semiconductor integrated circuit device includes, an outside air temperature acquisition unit which acquires outside air temperature information, a storage which stores temperature characteristic data of the temperature detection diode and a first value based on a signal from the detection circuit at a first temperature and a temperature arithmetic processing unit which calculates a temperature of the power semiconductor device from a third value based on a signal from the detection circuit, the temperature characteristic data, the first temperature acquired by the outside air temperature acquisition unit and the first value.

Abstract: A thermoelectric material includes a lower part from a bottom surface of the thermoelectric material to a point of 30% of an average thickness of the thermoelectric material and having an average content of carbon atoms of 40 at% or more in the thermoelectric material, and an upper part corresponding to a remaining 70% of the average thickness of the thermoelectric material and having an average content of carbon atoms of 20 at% or less in the thermoelectric material.

Abstract: A bonded body includes: a piezoelectric single crystal substrate; a supporting substrate composed of a single crystal silicon; a bonding layer—provided between the supporting substrate and piezoelectric single crystal substrate and having a composition of Si(1-x)Ox (0.008?x?0.408); and an amorphous layer provided between the supporting substrate and bonding layer and containing silicon atoms, oxygen atoms, and argon atoms. The concentration of the oxygen atoms in an end part of the amorphous layer on a side of the bonding layer is higher than the average concentration of the oxygen atoms in the bonding layer.

Abstract: A system and method for a passive thermal diode (PTD) to be disposed on a pipeline that inhibits heat transfer from the pipeline to the environment below a threshold temperature and promotes heat transfer from the environment to the pipeline above a threshold temperature.

Abstract: Method for generation of electrical power within a three-dimensional integrated structure comprising several elements electrically intercoupled by a link device, the method comprising the production of a temperature gradient in at least one region of the link device resulting from the operation of at least one of the said elements and the production of electrical power using at least one thermo-electric generator comprising at least one assembly of thermocouples electrically coupled in series and thermally coupled in parallel and contained within the said region subjected to the said temperature gradient.

Abstract: A plug with a cable includes a plug and a cable. The plug is connected to a receptacle to which a secondary cell is connected. The plug includes a housing and a substrate therein. The cable includes a power supply line and a grounding line. The cable has one end connected to the plug and the other end connected to a power supply unit. A switch is mounted on the substrate and provided in series in a power supply interconnection connected to the power supply line. A temperature sensor is mounted on the substrate and disposed near a power supply terminal or a grounding terminal of the plug. A control circuit is mounted on the substrate and configured to interrupt the power supply interconnection by turning off the switch when a temperature detected by the temperature sensor exceeds a predetermined value.

Abstract: The structure of a micro-electro-mechanical system (MEMS) thermal sensor and a method of fabricating the MEMS thermal sensor are disclosed. A method of fabricating a MEMS thermal sensor includes forming first and second sensing electrodes with first and second electrode fingers, respectively, on a substrate and forming a patterned layer with a rectangular cross-section between a pair of the first electrode fingers. The first and second electrode fingers are formed in an interdigitated configuration and suspended above the substrate. The method further includes modifying the patterned layer to have a curved cross-section between the pair of the first electrode fingers, forming a curved sensing element on the modified patterned layer to couple to the pair of the first electrode fingers, and removing the modified patterned layer.

Abstract: A multilayer ceramic electronic component includes: a ceramic body having a hexahedral shape including at least one rounded corner and including dielectric layers and first and second internal electrodes, and first and second external electrodes. The first and second external electrodes respectively include first and second base electrode layers which at least partially contact the first and second external sides of the ceramic body, and first and second plating layers disposed to cover the first and second base electrode layers, respectively. CP/CT is equal to or greater than 1.6 and equal to or less than 2.4, where CP is a length of a rounded boundary line of the rounded corner of the ceramic body viewed in a cross-section in length and thickness directions, and CT is a thickness of one of the first and second base electrode layers at a central point in the thickness direction.

Abstract: There is provided an interface module, having an interface for connection with a signal connector, a cage for guiding the signal connector towards the interface and a heat sink. The cage includes a cage portion that is configured to move from a first position to a second position upon insertion of the signal connector into the cage. In the first position, the cage portion is not in thermal contact with the heat sink. When in the second position, the cage portion is in thermal contact with the heat sink.

Abstract: A radiation detector includes a substrate and a membrane suspended above the substrate by spacers, wherein the spacers electrically contact a radiation sensor formed in the membrane and thermally insulate the membrane from the substrate.

Abstract: Provided are a pixel of an uncooled infrared focal plane detector and a preparation method therefor. The pixel includes a structure of three layers sequentially located on a semiconductor substrate from bottom to top. The first layer is a bridge structure including a metal reflection layer, an insulation dielectric layer, a first supporting layer, a first support layer protection layer, a first metal electrode layer and a first silicon nitride dielectric layer. The second layer is a thermal conversion structure including a second support layer, a second support layer protection layer, a thermal sensitive layer, a thermal sensitive layer production layer, a second metal electrode layer and a second silicon nitride dielectric layer. The third layer is an absorption structure including a third support layer, an absorption layer and an absorption layer protection layer.

Abstract: An over-current protection apparatus constituted of: a transistor disposed on a substrate; a first thermal sense device arranged to sense a temperature reflective of a junction temperature of the transistor; a second thermal sense device arranged to sense a temperature reflective of a temperature of a casing surrounding the substrate; and a control circuitry, arranged to alternately: responsive to the sensed temperature by the first thermal sense device and the sensed temperature of the second thermal sense device being indicative that the temperature difference between the transistor junction and the substrate casing is greater than a predetermined value, switch off the transistor; and responsive to the sensed temperature by the first thermal sense device and the sensed temperature by the second thermal sense device being indicative that the temperature difference between the transistor junction and the substrate casing is not greater than the predetermined value, switch on the transistor.

Abstract: A plurality of waveguide structures are formed in at least one silicon layer of a first member. The first member includes: a first surface of a first silicon dioxide layer that is attached to a second member that consists essentially of an optically transmissive material having a thermal conductivity less than about 50 W/(m·K), and a second surface of material that was deposited over at least some of the plurality of waveguide structures. An array of phase shifters is formed in one or more layers of the first member. An array of temperature controlling elements are in proximity to the array of phase shifters.

Abstract: An image sensor, an imaging apparatus, and a method of manufacturing an image sensor with an improved heat dissipation effect. An image sensor includes a first layer having an imaging function, pixels being arranged in the first layer in at least a first direction, and a second layer joined to the first layer. The second layer includes a first sublayer, and primary material regions including primary material and secondary material regions including secondary material are arranged alternately in the first direction in the first sublayer.

Abstract: A crystal unit includes a package, a crystal element, and a temperature sensor. The crystal element includes a crystal blank and a pair of excitation electrodes on a pair of major surfaces of the crystal blank and is air-tightly sealed in the package. The temperature sensor is mounted in the package. The crystal blank includes a crystal plane inclined relative to the major surfaces in at least a portion of the side surfaces.

Abstract: A semiconductor power device has: a die, with a front surface and a rear surface, and with an arrangement of projecting regions on the front surface, which define between them windows arranged within which are contact regions; and a package, which houses the die inside it. A metal frame has a top surface and a bottom surface; the die is carried by the frame on the top surface; an encapsulation coating coats the frame and the die. A first insulation multilayer is arranged above the die and is formed by an upper metal layer, a lower metal layer, and an intermediate insulating layer; the lower metal layer is shaped according to an arrangement of the projecting regions and has contact projections, which extend so as to electrically contact the contact regions, and insulation regions, interposed between the contact projections, in positions corresponding to the projecting regions.

Abstract: Electromechanical device structures are provided, as well as methods for forming them. The device structures incorporate at least a first and second substrate separated by an interface material layer, where the first substrate comprises an anchor material structure and at least one suspended material structure, optionally a spring material structure, and optionally an electrostatic sense electrode. The device structures may be formed by methods that include providing an interface material layer on one or both of the first and second substrates, bonding the interface materials to the opposing first or second substrate or to the other interface material layer, followed by forming the suspended material structure by etching.

Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

Abstract: The objective of the present invention is to correct deviation in the injection amount and changes in the injection timing when the voltage of a high-voltage source for a drive device decreases.

Abstract: A relative humidity sensor is disclosed. The relative humidity sensor includes a first electrode and a second electrode disposed above a dielectric substrate. A humidity sensitive layer is disposed above at least one of the first electrode and the second electrode, where the humidity sensitive layer comprises a curable composition comprising cellulose acetate butyrate and a hydrophobic filler. In some embodiments, a dust protection layer is disposed above the humidity sensitive layer.

Abstract: In a semiconductor module, first and second semiconductor chips each include a transistor and a temperature-detecting diode connected between first and second control pads. The first control pad of the first semiconductor chip is connected to a first control terminal, the second control pad of the first semiconductor chip and the first control pad of the second semiconductor chip are connected to a second control terminal, and the second control pad of the second semiconductor chip is connected to a third control terminal.

Abstract: According to the present invention, a semiconductor device includes a semiconductor chip, resistance of which changes in accordance with temperature, an external resistor connected in series with the semiconductor chip and a detector configured to detect, while a first voltage is applied between both ends of a series circuit formed by the semiconductor chip and the external resistor, a second voltage applied between both ends of the external resistor, wherein the detector calculates a temperature of the semiconductor chip from the second voltage.

Abstract: A main semiconductor element and a temperature sensing part are arranged on a single silicon carbide base. The main semiconductor element is a vertical MOSFET and the temperature sensing part is a horizontal diode. An anode region of the temperature sensing part and an n+-type source region and a p+-type contact region of the main semiconductor element are connected by wiring by an anode electrode on a front surface of the silicon carbide base. The temperature sensing part, when the main semiconductor element is ON, is forward biased by drift current flowing in the main semiconductor element. The temperature sensing part, for example, is a poly-silicon diode constituted by a p-type poly-silicon layer and an n-type poly-silicon layer arranged on the front surface of the silicon carbide base. With such configuration, a semiconductor device having high reliability may be provided.

Abstract: The disclosed subject matter relates to an infrared detector including a dielectric detector membrane and a NbTiN absorber coating disposed thereon, the latter being a low stress, high resistivity film or coating useful at extremely low temperatures.

Abstract: A method of controlling a memory device including a temperature sensor includes sensing a temperature of the memory device and extracting an extracted temperature for controlling the memory device using the sensed temperature, storing the extracted temperature in the memory device, calculating an estimated temperature at a current time point using the extracted temperature and a plurality of past extracted temperatures stored in the memory device, and controlling the memory device using the estimated temperature.

Abstract: A plug with a cable includes a plug and a cable. The plug is connected to a receptacle to which a secondary cell is connected. The plug includes a hosing and a substrate therein. The cable includes a power supply line and a grounding line. The cable has one end connected to the plug and the other end connected to a power supply unit. A switch is mounted on the substrate and provided in series in a power supply interconnection connected to the power supply line. A temperature sensor is mounted on the substrate and disposed near a power supply terminal or a grounding terminal of the plug. A control circuit is mounted on the substrate and configured to interrupt the power supply interconnection by turning off the switch when a temperature detected by the temperature sensor exceeds a predetermined value.

Abstract: Flexible thermoelectric generators and methods of manufacturing are disclosed. In one embodiment, a flexible thermoelectric generator includes a plurality of pillars, a first and a second plurality of flexible interconnects, and a flexible material. The plurality of pillars having a first side and a second side. The first plurality of flexible interconnects electrically connecting pairs of the plurality of pillars on the first side. The second plurality of flexible interconnects electrically connecting the pairs of plurality of pillars on the second side. The first and the second plurality of flexible interconnects alternate among the pairs of plurality of pillars to form an electrical circuit having a first end and a second end. The flexible material covering the first and second plurality of flexible interconnects and having an external surface. The flexible material is configured to conduct thermal energy from the external surface to the plurality of pillars.

Abstract: A far-field radiative thermal rectification device uses a phase change material to achieve a high degree of asymmetry in radiative heat transfer. The device has a multilayer structure on one side and a blackbody on other side. The multilayer structure can consist of a transparent thin film of KBr sandwiched between a thin film of VO2 and a reflecting layer of gold. When VO2 is in its insulating phase, the structure is highly reflective due to the two transparent layers on highly reflective gold. When VO2 is in the metallic phase, Fabry-Perot type of resonance occurs and the tri-layer structure acts like a wide-angle antireflection coating achieved by destructive interference of partially reflected waves making it highly absorptive for majority of spectral range of thermal radiation. The instant structure can form the active part of a configuration that acts like a far-field radiative thermal diode.

Abstract: A rectifier package module for a vehicle and a connection status detection method for a temperature sensor thereof are provided. The rectifier package module includes at least one temperature sensor and a control chip. The control chip has an end coupled to the temperature sensor through a bonding wire. The control chip generates a current and provides a reference voltage according to a mode selection signal. The current is provided to the temperature sensor through the bonding wire. The control chip compares a voltage on the end with the reference voltage to generate a comparison result. In a test mode, a comparison circuit generates the comparison result to indicate a connection status between the end and the temperature sensor.

Abstract: A system is described wherein power degradation can be used in conjunction with predictive failure analysis in order to accurately determine when a hardware component might fail. In one example, printed circuit boards (PCBs) can unexpectedly malfunction due to a variety of reasons including silicon power variation or air mover speed. Other hardware components can include silicon or an integrated circuit. In order to accurately monitor the hardware component, telemetry is used to automatically receive communications regarding measurements of data associated with the hardware component, such as power-related data or temperature data. The different temperature data can include junction temperature or ambient air temperature to determine an expected power usage. The actual power usage is then compared to the expected power usage to determine whether the hardware component can soon fail.

Abstract: A semiconductor power converter includes a main circuit board installed in a housing of the semiconductor power converter. On the main circuit board, a main circuit converting power supplied from a power source to supply converted power to a load, and a first temperature sensor are disposed. The converter also includes a control circuit board installed in the housing. On the control circuit board, a control circuit controlling the main circuit, and a second temperature sensor are disposed. The converter further includes an internal-air-temperature estimation circuit that estimates an internal air temperature in the semiconductor power converter by using a temperature detected by the first temperature sensor and a temperature detected by the second temperature sensor.