Temperature Patents (Class 257/467)
  • Patent number: 11133449
    Abstract: A thermoelectric material includes a lower part from a bottom surface of the thermoelectric material to a point of 30% of an average thickness of the thermoelectric material and having an average content of carbon atoms of 40 at% or more in the thermoelectric material, and an upper part corresponding to a remaining 70% of the average thickness of the thermoelectric material and having an average content of carbon atoms of 20 at% or less in the thermoelectric material.
    Type: Grant
    Filed: September 28, 2020
    Date of Patent: September 28, 2021
    Assignees: Hyundai Motor Company, Kia Motors Corporation
    Inventors: Hoo Dam Lee, Byung Wook Kim, Jin Woo Kwak, Min Jae Lee, Woo Ju Lee, Yoon Jin Kim, Young Sun Kim
  • Patent number: 11133788
    Abstract: A bonded body includes: a piezoelectric single crystal substrate; a supporting substrate composed of a single crystal silicon; a bonding layer—provided between the supporting substrate and piezoelectric single crystal substrate and having a composition of Si(1-x)Ox (0.008?x?0.408); and an amorphous layer provided between the supporting substrate and bonding layer and containing silicon atoms, oxygen atoms, and argon atoms. The concentration of the oxygen atoms in an end part of the amorphous layer on a side of the bonding layer is higher than the average concentration of the oxygen atoms in the bonding layer.
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: September 28, 2021
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yudai Uno, Masashi Goto, Tomoyoshi Tai
  • Patent number: 11112190
    Abstract: A system and method for a passive thermal diode (PTD) to be disposed on a pipeline that inhibits heat transfer from the pipeline to the environment below a threshold temperature and promotes heat transfer from the environment to the pipeline above a threshold temperature.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: September 7, 2021
    Assignee: Saudi Arabian Oil Company
    Inventors: Thibault Tarik Villette, Guillaume Robert Jean-Francois Raynel
  • Patent number: 11075246
    Abstract: Method for generation of electrical power within a three-dimensional integrated structure comprising several elements electrically intercoupled by a link device, the method comprising the production of a temperature gradient in at least one region of the link device resulting from the operation of at least one of the said elements and the production of electrical power using at least one thermo-electric generator comprising at least one assembly of thermocouples electrically coupled in series and thermally coupled in parallel and contained within the said region subjected to the said temperature gradient.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: July 27, 2021
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Christian Rivero, Pascal Fornara
  • Patent number: 11056845
    Abstract: A plug with a cable includes a plug and a cable. The plug is connected to a receptacle to which a secondary cell is connected. The plug includes a housing and a substrate therein. The cable includes a power supply line and a grounding line. The cable has one end connected to the plug and the other end connected to a power supply unit. A switch is mounted on the substrate and provided in series in a power supply interconnection connected to the power supply line. A temperature sensor is mounted on the substrate and disposed near a power supply terminal or a grounding terminal of the plug. A control circuit is mounted on the substrate and configured to interrupt the power supply interconnection by turning off the switch when a temperature detected by the temperature sensor exceeds a predetermined value.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: July 6, 2021
    Assignee: MITSUMI ELECTRIC CO., LTD.
    Inventor: Yoshihiro Motoichi
  • Patent number: 10962424
    Abstract: The structure of a micro-electro-mechanical system (MEMS) thermal sensor and a method of fabricating the MEMS thermal sensor are disclosed. A method of fabricating a MEMS thermal sensor includes forming first and second sensing electrodes with first and second electrode fingers, respectively, on a substrate and forming a patterned layer with a rectangular cross-section between a pair of the first electrode fingers. The first and second electrode fingers are formed in an interdigitated configuration and suspended above the substrate. The method further includes modifying the patterned layer to have a curved cross-section between the pair of the first electrode fingers, forming a curved sensing element on the modified patterned layer to couple to the pair of the first electrode fingers, and removing the modified patterned layer.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: March 30, 2021
    Inventors: Tsai-Hao Hung, Shih-Chi Kuo
  • Patent number: 10950386
    Abstract: A multilayer ceramic electronic component includes: a ceramic body having a hexahedral shape including at least one rounded corner and including dielectric layers and first and second internal electrodes, and first and second external electrodes. The first and second external electrodes respectively include first and second base electrode layers which at least partially contact the first and second external sides of the ceramic body, and first and second plating layers disposed to cover the first and second base electrode layers, respectively. CP/CT is equal to or greater than 1.6 and equal to or less than 2.4, where CP is a length of a rounded boundary line of the rounded corner of the ceramic body viewed in a cross-section in length and thickness directions, and CT is a thickness of one of the first and second base electrode layers at a central point in the thickness direction.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: March 16, 2021
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Jang Yeol Lee, Sun Woong Kim, Jong Ho Lee, Jung Su Lee, Myung Jun Park
  • Patent number: 10910766
    Abstract: There is provided an interface module, having an interface for connection with a signal connector, a cage for guiding the signal connector towards the interface and a heat sink. The cage includes a cage portion that is configured to move from a first position to a second position upon insertion of the signal connector into the cage. In the first position, the cage portion is not in thermal contact with the heat sink. When in the second position, the cage portion is in thermal contact with the heat sink.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: February 2, 2021
    Assignee: Telefonaktiebolaget LM Ericsson (Publ)
    Inventors: Claudio D'Inca, Sergio Lanzone, Marco Assale, Sergio Mosti, Angelo Rivara
  • Patent number: 10900841
    Abstract: A radiation detector includes a substrate and a membrane suspended above the substrate by spacers, wherein the spacers electrically contact a radiation sensor formed in the membrane and thermally insulate the membrane from the substrate.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: January 26, 2021
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
    Inventors: Dirk Weiler, Kai-Marcel Muckensturm, Frank Hochschulz
  • Patent number: 10825857
    Abstract: Provided are a pixel of an uncooled infrared focal plane detector and a preparation method therefor. The pixel includes a structure of three layers sequentially located on a semiconductor substrate from bottom to top. The first layer is a bridge structure including a metal reflection layer, an insulation dielectric layer, a first supporting layer, a first support layer protection layer, a first metal electrode layer and a first silicon nitride dielectric layer. The second layer is a thermal conversion structure including a second support layer, a second support layer protection layer, a thermal sensitive layer, a thermal sensitive layer production layer, a second metal electrode layer and a second silicon nitride dielectric layer. The third layer is an absorption structure including a third support layer, an absorption layer and an absorption layer protection layer.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: November 3, 2020
    Assignee: Yantai Raytron Technology Co., Ltd
    Inventors: Hongchen Wang, Peng Wang, Wenli Chen, Dong Qiu
  • Patent number: 10819101
    Abstract: An over-current protection apparatus constituted of: a transistor disposed on a substrate; a first thermal sense device arranged to sense a temperature reflective of a junction temperature of the transistor; a second thermal sense device arranged to sense a temperature reflective of a temperature of a casing surrounding the substrate; and a control circuitry, arranged to alternately: responsive to the sensed temperature by the first thermal sense device and the sensed temperature of the second thermal sense device being indicative that the temperature difference between the transistor junction and the substrate casing is greater than a predetermined value, switch off the transistor; and responsive to the sensed temperature by the first thermal sense device and the sensed temperature by the second thermal sense device being indicative that the temperature difference between the transistor junction and the substrate casing is not greater than the predetermined value, switch on the transistor.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: October 27, 2020
    Assignee: Microsemi Corporation
    Inventors: Pierre Irissou, Etienne Colmet-Daage
  • Patent number: 10775559
    Abstract: A plurality of waveguide structures are formed in at least one silicon layer of a first member. The first member includes: a first surface of a first silicon dioxide layer that is attached to a second member that consists essentially of an optically transmissive material having a thermal conductivity less than about 50 W/(m·K), and a second surface of material that was deposited over at least some of the plurality of waveguide structures. An array of phase shifters is formed in one or more layers of the first member. An array of temperature controlling elements are in proximity to the array of phase shifters.
    Type: Grant
    Filed: April 16, 2019
    Date of Patent: September 15, 2020
    Assignee: Analog Photonics LLC
    Inventors: Michael Robert Watts, Benjamin Roy Moss, Ehsan Shah Hosseini, Christopher Poulton, Peter Nicholas Russo
  • Patent number: 10741597
    Abstract: An image sensor, an imaging apparatus, and a method of manufacturing an image sensor with an improved heat dissipation effect. An image sensor includes a first layer having an imaging function, pixels being arranged in the first layer in at least a first direction, and a second layer joined to the first layer. The second layer includes a first sublayer, and primary material regions including primary material and secondary material regions including secondary material are arranged alternately in the first direction in the first sublayer.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: August 11, 2020
    Assignee: Kyocera Corporation
    Inventor: Takashi Nakashikiryo
  • Patent number: 10734948
    Abstract: A crystal unit includes a package, a crystal element, and a temperature sensor. The crystal element includes a crystal blank and a pair of excitation electrodes on a pair of major surfaces of the crystal blank and is air-tightly sealed in the package. The temperature sensor is mounted in the package. The crystal blank includes a crystal plane inclined relative to the major surfaces in at least a portion of the side surfaces.
    Type: Grant
    Filed: October 1, 2018
    Date of Patent: August 4, 2020
    Assignee: KYOCERA Corporation
    Inventor: Masanobu Kitada
  • Patent number: 10720373
    Abstract: A semiconductor power device has: a die, with a front surface and a rear surface, and with an arrangement of projecting regions on the front surface, which define between them windows arranged within which are contact regions; and a package, which houses the die inside it. A metal frame has a top surface and a bottom surface; the die is carried by the frame on the top surface; an encapsulation coating coats the frame and the die. A first insulation multilayer is arranged above the die and is formed by an upper metal layer, a lower metal layer, and an intermediate insulating layer; the lower metal layer is shaped according to an arrangement of the projecting regions and has contact projections, which extend so as to electrically contact the contact regions, and insulation regions, interposed between the contact projections, in positions corresponding to the projecting regions.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: July 21, 2020
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Francesco Salamone, Cristiano Gianluca Stella
  • Patent number: 10717642
    Abstract: Electromechanical device structures are provided, as well as methods for forming them. The device structures incorporate at least a first and second substrate separated by an interface material layer, where the first substrate comprises an anchor material structure and at least one suspended material structure, optionally a spring material structure, and optionally an electrostatic sense electrode. The device structures may be formed by methods that include providing an interface material layer on one or both of the first and second substrates, bonding the interface materials to the opposing first or second substrate or to the other interface material layer, followed by forming the suspended material structure by etching.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: July 21, 2020
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Francis J. Kub, Karl D. Hobart, Eugene A. Imhoff, Rachael L. Myers-Ward, Eugene Cook, Jonathan Bernstein, Marc Weinberg
  • Patent number: 10684306
    Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: June 16, 2020
    Assignee: Infineon Technologies AG
    Inventors: Steffen Bieselt, Heiko Froehlich, Thoralf Kautzsch, Andre Roeth, Maik Stegemann, Mirko Vogt, Bernhard Winkler
  • Patent number: 10634636
    Abstract: A relative humidity sensor is disclosed. The relative humidity sensor includes a first electrode and a second electrode disposed above a dielectric substrate. A humidity sensitive layer is disposed above at least one of the first electrode and the second electrode, where the humidity sensitive layer comprises a curable composition comprising cellulose acetate butyrate and a hydrophobic filler. In some embodiments, a dust protection layer is disposed above the humidity sensitive layer.
    Type: Grant
    Filed: February 2, 2017
    Date of Patent: April 28, 2020
    Assignee: HONEYWELL INTERNATIONAL INC.
    Inventors: Bogdan-Catalin Serban, Mihai Brezeanu, Octavian Buiu, Cornel P. Cobianu
  • Patent number: 10634083
    Abstract: The objective of the present invention is to correct deviation in the injection amount and changes in the injection timing when the voltage of a high-voltage source for a drive device decreases.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: April 28, 2020
    Assignee: HITACHI AUTOMOTIVE SYSTEMS, LTD.
    Inventors: Ryo Kusakabe, Tomoaki Horii, Shingo Kimura, Takaki Itaya, Mitsuru Nagase, Shirou Yamaoka
  • Patent number: 10580754
    Abstract: In a semiconductor module, first and second semiconductor chips each include a transistor and a temperature-detecting diode connected between first and second control pads. The first control pad of the first semiconductor chip is connected to a first control terminal, the second control pad of the first semiconductor chip and the first control pad of the second semiconductor chip are connected to a second control terminal, and the second control pad of the second semiconductor chip is connected to a third control terminal.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: March 3, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Shinya Yano, Shinichi Kinouchi, Yasushi Nakayama
  • Patent number: 10564048
    Abstract: According to the present invention, a semiconductor device includes a semiconductor chip, resistance of which changes in accordance with temperature, an external resistor connected in series with the semiconductor chip and a detector configured to detect, while a first voltage is applied between both ends of a series circuit formed by the semiconductor chip and the external resistor, a second voltage applied between both ends of the external resistor, wherein the detector calculates a temperature of the semiconductor chip from the second voltage.
    Type: Grant
    Filed: February 8, 2019
    Date of Patent: February 18, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tetsuo Yamashita, Tomohiro Hieda, Hiroki Muraoka, Mituharu Tabata, Koichi Masuda
  • Patent number: 10504785
    Abstract: A main semiconductor element and a temperature sensing part are arranged on a single silicon carbide base. The main semiconductor element is a vertical MOSFET and the temperature sensing part is a horizontal diode. An anode region of the temperature sensing part and an n+-type source region and a p+-type contact region of the main semiconductor element are connected by wiring by an anode electrode on a front surface of the silicon carbide base. The temperature sensing part, when the main semiconductor element is ON, is forward biased by drift current flowing in the main semiconductor element. The temperature sensing part, for example, is a poly-silicon diode constituted by a p-type poly-silicon layer and an n-type poly-silicon layer arranged on the front surface of the silicon carbide base. With such configuration, a semiconductor device having high reliability may be provided.
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: December 10, 2019
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Shoji Yamada, Takashi Shiigi, Yasuyuki Hoshi
  • Patent number: 10458853
    Abstract: The disclosed subject matter relates to an infrared detector including a dielectric detector membrane and a NbTiN absorber coating disposed thereon, the latter being a low stress, high resistivity film or coating useful at extremely low temperatures.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: October 29, 2019
    Assignee: United States of America as represented by the Administrator of NASA
    Inventors: Ari D. Brown, Edward J. Wollack, Kevin H. Miller
  • Patent number: 10446217
    Abstract: A method of controlling a memory device including a temperature sensor includes sensing a temperature of the memory device and extracting an extracted temperature for controlling the memory device using the sensed temperature, storing the extracted temperature in the memory device, calculating an estimated temperature at a current time point using the extracted temperature and a plurality of past extracted temperatures stored in the memory device, and controlling the memory device using the estimated temperature.
    Type: Grant
    Filed: May 24, 2018
    Date of Patent: October 15, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Min-Sang Park
  • Patent number: 10439338
    Abstract: A plug with a cable includes a plug and a cable. The plug is connected to a receptacle to which a secondary cell is connected. The plug includes a hosing and a substrate therein. The cable includes a power supply line and a grounding line. The cable has one end connected to the plug and the other end connected to a power supply unit. A switch is mounted on the substrate and provided in series in a power supply interconnection connected to the power supply line. A temperature sensor is mounted on the substrate and disposed near a power supply terminal or a grounding terminal of the plug. A control circuit is mounted on the substrate and configured to interrupt the power supply interconnection by turning off the switch when a temperature detected by the temperature sensor exceeds a predetermined value.
    Type: Grant
    Filed: July 21, 2015
    Date of Patent: October 8, 2019
    Assignee: MITSUMI ELECTRIC CO., LTD.
    Inventor: Yoshihiro Motoichi
  • Patent number: 10431726
    Abstract: Flexible thermoelectric generators and methods of manufacturing are disclosed. In one embodiment, a flexible thermoelectric generator includes a plurality of pillars, a first and a second plurality of flexible interconnects, and a flexible material. The plurality of pillars having a first side and a second side. The first plurality of flexible interconnects electrically connecting pairs of the plurality of pillars on the first side. The second plurality of flexible interconnects electrically connecting the pairs of plurality of pillars on the second side. The first and the second plurality of flexible interconnects alternate among the pairs of plurality of pillars to form an electrical circuit having a first end and a second end. The flexible material covering the first and second plurality of flexible interconnects and having an external surface. The flexible material is configured to conduct thermal energy from the external surface to the plurality of pillars.
    Type: Grant
    Filed: May 2, 2017
    Date of Patent: October 1, 2019
    Assignee: North Carolina State University
    Inventors: Mehmet Ozturk, Michael D. Dickey, Collin Ladd, Dishit Paresh Parekh, Viswanath Padmanabhan Ramesh, Francisco Suarez
  • Patent number: 10403767
    Abstract: A far-field radiative thermal rectification device uses a phase change material to achieve a high degree of asymmetry in radiative heat transfer. The device has a multilayer structure on one side and a blackbody on other side. The multilayer structure can consist of a transparent thin film of KBr sandwiched between a thin film of VO2 and a reflecting layer of gold. When VO2 is in its insulating phase, the structure is highly reflective due to the two transparent layers on highly reflective gold. When VO2 is in the metallic phase, Fabry-Perot type of resonance occurs and the tri-layer structure acts like a wide-angle antireflection coating achieved by destructive interference of partially reflected waves making it highly absorptive for majority of spectral range of thermal radiation. The instant structure can form the active part of a configuration that acts like a far-field radiative thermal diode.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: September 3, 2019
    Assignee: Rhode Island Council on Postsecondary Education
    Inventors: Yi Zheng, Alok Ghanekar, Gang Xiao
  • Patent number: 10371724
    Abstract: A rectifier package module for a vehicle and a connection status detection method for a temperature sensor thereof are provided. The rectifier package module includes at least one temperature sensor and a control chip. The control chip has an end coupled to the temperature sensor through a bonding wire. The control chip generates a current and provides a reference voltage according to a mode selection signal. The current is provided to the temperature sensor through the bonding wire. The control chip compares a voltage on the end with the reference voltage to generate a comparison result. In a test mode, a comparison circuit generates the comparison result to indicate a connection status between the end and the temperature sensor.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: August 6, 2019
    Assignee: ACTRON TECHNOLOGY CORPORATION
    Inventor: Chi-Kai Wu
  • Patent number: 10346239
    Abstract: A system is described wherein power degradation can be used in conjunction with predictive failure analysis in order to accurately determine when a hardware component might fail. In one example, printed circuit boards (PCBs) can unexpectedly malfunction due to a variety of reasons including silicon power variation or air mover speed. Other hardware components can include silicon or an integrated circuit. In order to accurately monitor the hardware component, telemetry is used to automatically receive communications regarding measurements of data associated with the hardware component, such as power-related data or temperature data. The different temperature data can include junction temperature or ambient air temperature to determine an expected power usage. The actual power usage is then compared to the expected power usage to determine whether the hardware component can soon fail.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: July 9, 2019
    Assignee: Amazon Technologies, Inc.
    Inventors: Felipe Enrique Ortega Gutierrez, Gavin Akira Ebisuzaki, Christopher James BeSerra
  • Patent number: 10349562
    Abstract: A semiconductor power converter includes a main circuit board installed in a housing of the semiconductor power converter. On the main circuit board, a main circuit converting power supplied from a power source to supply converted power to a load, and a first temperature sensor are disposed. The converter also includes a control circuit board installed in the housing. On the control circuit board, a control circuit controlling the main circuit, and a second temperature sensor are disposed. The converter further includes an internal-air-temperature estimation circuit that estimates an internal air temperature in the semiconductor power converter by using a temperature detected by the first temperature sensor and a temperature detected by the second temperature sensor.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: July 9, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventor: Nozomi Kondo
  • Patent number: 10283932
    Abstract: An apparatus comprising a laser comprising an active layer and configured to emit an optical signal, wherein a temperature change of the laser causes the optical signal to shift in wavelength, and a heater thermally coupled to the active layer and configured to reduce a wavelength shift of the optical signal by applying heat to the active layer.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: May 7, 2019
    Assignee: Futurewei Technologies, Inc.
    Inventors: Xuejin Yan, Jianmin Gong, Hongbing Lei, Jianhe Gao
  • Patent number: 10256406
    Abstract: A semiconductor structure includes a plurality of stack structures overlying a substrate. Each stack structure includes a first chalcogenide material over a conductive material overlying the substrate, an electrode over the first chalcogenide material, a second chalcogenide material over the electrode, a liner on sidewalls of at least one of the first chalcogenide material or the second chalcogenide material, and a dielectric material over and in contact with sidewalls of the electrode and in contact with the liner. Related semiconductor devices and systems, methods of forming the semiconductor structure, semiconductor device, and systems, and methods of forming the liner in situ are disclosed.
    Type: Grant
    Filed: May 16, 2016
    Date of Patent: April 9, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Dale W. Collins, Andrea Gotti, F. Daniel Gealy, Tuman E. Allen, Swapnil Lengade
  • Patent number: 10247617
    Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.
    Type: Grant
    Filed: August 24, 2016
    Date of Patent: April 2, 2019
    Assignee: QUALCOMM Incorporated
    Inventors: Lixin Ge, Periannan Chidambaram, Bin Yang, Jiefeng Jeff Lin, Giridhar Nallapati, Bo Yu, Jie Deng, Jun Yuan, Stanley Seungchul Song
  • Patent number: 10188015
    Abstract: The disclosure generally relates to a hybrid design whereby a heat spreader arranged to reduce an external skin temperature on a handheld device may further enable the external skin temperature to be directly measured. For example, the heat spreader may be thermally coupled to at least one external surface and include at least one region in which a plurality of recesses are formed such that an electrical resistance is produced in the at least one region when a current is applied thereto. The heat spreader may be formed from a material having a substantially linear resistance-to-temperature correlation, whereby the electrical resistance produced in the at least one region may be measured and correlated to a temperature on the at least one external surface.
    Type: Grant
    Filed: September 20, 2016
    Date of Patent: January 22, 2019
    Assignee: QUALCOMM Incorporated
    Inventors: Mehdi Saeidi, Rajat Mittal, Ryan Coutts
  • Patent number: 10139364
    Abstract: A device layer of an integrated circuit device includes a semiconductor active layer spanning a plurality of device regions. Each of the device regions has a heating element, a temperature sensor, and bioFETs in the device layer. The bioFETs have source/drain regions and channel regions in the semiconductor active layer and fluid gates exposed on a surface for fluid interfacing on one side of the device layer. A multilayer metal interconnect structure is disposed on the opposite side of the device layer. This structure places the heating elements in proximity to the fluid gates enabling localized heating, precision heating, and multiplexed temperature control for multiplexed bio-sensing applications.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: November 27, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Shao Liu, Jui-Cheng Huang, Tung-Tsun Chen
  • Patent number: 10059221
    Abstract: An energy storage arrangement includes an electrical energy store, a control device which is assigned thereto and which, in the operating state, is designed to determine control information relevant to the operation of the energy store, and a switching device which is assigned to the control device and which, in the non-operating state of the control device, is designed to start up the control device, the switching device including at least one temperature-sensitive switching means which, when a specific threshold temperature is exceeded, at least one material property of the switching means changes in such a way that the control device is started up by way of the switching device.
    Type: Grant
    Filed: July 8, 2014
    Date of Patent: August 28, 2018
    Assignee: Audi AG
    Inventor: Johannes Dorsch
  • Patent number: 9946314
    Abstract: The heat dissipation device is for a display card and includes an air cooling member on a power supply circuit of the display card, a water cooling member on a processing element of the display card, and an auxiliary member disposed to a side of the water cooling member adjacent to the display card. The auxiliary member has at least an opening corresponding to the processing element and an extension piece extended away from the opening corresponding to a memory of the display card. As such, the heat from power supply circuit, the processing element, and the memory is respectively dissipated by the air cooling member, the water cooling member, and the auxiliary member and its extension piece, thereby achieving significantly enhanced heat dissipation performance.
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: April 17, 2018
    Assignee: EVGA CORPORATION
    Inventor: Tai-Sheng Han
  • Patent number: 9897648
    Abstract: Operational and functional testing of the optical Physical Media Dependent Integrated Circuits (“PMD ICs”) is achieved by constructing a switchable on-chip load with similar or equivalent electrical characteristics of a targeted photonic device.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: February 20, 2018
    Assignee: Cosemi Technologies, Inc.
    Inventors: Wu-Chun Chou, Michael Eugene Davis, Charles Phillip McClay
  • Patent number: 9894300
    Abstract: An image sensing device may include a temperature estimation block suitable for generating a temperature code signal based on a temperature table in response to a digital code signal corresponding to a pixel signal, and a calibration block suitable for removing noise reflected in the pixel signal at current temperature in response to the temperature code signal.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: February 13, 2018
    Assignee: SK Hynix Inc.
    Inventor: Min-Hee Jo
  • Patent number: 9863902
    Abstract: A resistive microelectronic fluid sensor implemented as an integrated voltage divider circuit can sense the presence of a fluid within a fluid reservoir, identify the fluid, and monitor fluid temperature or volume. Such a sensor has biomedical, industrial, and consumer product applications. After fluid detection, the fluid can be expelled from the reservoir and replenished with a fresh supply of fluid. A depression at the bottom of the sample reservoir allows a residual fluid to remain undetected so as not to skew the measurements. Electrodes can sense variations in the resistivity of the fluid, indicating a change in the fluid chemical composition, volume, or temperature. Such fluctuations that can be electrically sensed by the voltage divider circuit can be used as a thermal actuator to trigger ejection of all or part of the fluid sample.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: January 9, 2018
    Assignee: STMicroelectronics Asia Pacific Pte Ltd.
    Inventors: Archit Giridhar, Teck Khim Neo
  • Patent number: 9851254
    Abstract: A device for detecting electromagnetic radiation, including a substrate; at least one thermal detector, placed on the substrate, including an absorbing membrane suspended above the substrate; and an encapsulating structure encapsulating the thermal detector, including an encapsulating layer extending around and above the thermal detector so as to define with the substrate a cavity in which the thermal detector is located; wherein the encapsulating layer includes at least one through-orifice that is what is referred to as an exhaust vent, each exhaust vent being placed so that at least one thermal detector has a single exhaust vent located facing the corresponding absorbing membrane, preferably plumb with the center of said absorbing membrane.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: December 26, 2017
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Geoffroy Dumont, Laurent Carle, Pierre Imperinetti, Stephane Pocas, Jean-Jacques Yon
  • Patent number: 9845236
    Abstract: The present disclosure is directed to a monolithic MEMS (micro-electromechanical system) platform having a temperature sensor, a pressure sensor and a gas sensor, and an associated method of formation. In some embodiments, the MEMS platform includes a semiconductor substrate having one or more transistor devices and a temperature sensor. A dielectric layer is disposed over the semiconductor substrate. A cavity is disposed within an upper surface of the dielectric layer. A MEMS substrate is arranged onto the upper surface of the dielectric layer and has a first section and a second section. A pressure sensor has a first pressure sensor electrode that is vertically separated by the cavity from a second pressure sensor electrode within the first section of a MEMS substrate. A gas sensor has a polymer disposed between a first gas sensor electrode within the second section of a MEMS substrate and a second gas sensor electrode.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: December 19, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shao-Chi Yu, Chia-Ming Hung, Hsin-Ting Huang, Hsiang-Fu Chen, Allen Timothy Chang, Wen-Chuan Tai
  • Patent number: 9831771
    Abstract: Provided is a circuit device in which reduction of power consumption, reduction of the number of parts, and the like can be realized by eliminating the need for a sense resistor. The circuit device includes a bridge circuit, and a control circuit configured to compare a reference voltage VR and a detection voltage V2 (V1) set using the on-current and the on-resistance of at least one of a low-side transistor and a high-side transistor, output a detection result, control switching on and off of transistors in the bridge circuit, and perform switching from a charge period to a decay period.
    Type: Grant
    Filed: January 27, 2015
    Date of Patent: November 28, 2017
    Assignee: SEIKO EPSON CORPORATION
    Inventors: Katsumi Inoue, Atsushi Yamada
  • Patent number: 9804036
    Abstract: Representative implementations of devices and techniques provide calibration for a chip-based temperature sensor. Two or more measurements are taken using a high resolution temperature sensor digitizer, and used to determine a calibration for the temperature sensor, based on a reference temperature value calculated from the measurements.
    Type: Grant
    Filed: June 19, 2014
    Date of Patent: October 31, 2017
    Assignee: Infineon Technologies AG
    Inventor: Fan Yung Ma
  • Patent number: 9735768
    Abstract: In a general aspect, an apparatus can include a temperature measurement circuit configured to produce a first signal indicating a first operating temperature of a first semiconductor device and a temperature comparison circuit operationally coupled with the temperature measurement circuit. The temperature comparison circuit can be configured to compare the first signal with a second signal indicating a second operating temperature of at least a second semiconductor device and produce a comparison signal indicating whether the indicated first operating temperature is higher, lower or equal to the indicated second operating temperature. The apparatus can also include an adjustment circuit configured to adjust operation of the first semiconductor device based on the comparison signal.
    Type: Grant
    Filed: July 22, 2014
    Date of Patent: August 15, 2017
    Assignee: Fairchild Semiconductor Corporation
    Inventor: Ahmad R. Ashrafzadeh
  • Patent number: 9709524
    Abstract: A device layer of an integrated circuit device includes a semiconductor active layer spanning a plurality of device regions. Each of the device regions has a heating element, a temperature sensor, and bioFETs in the device layer. The bioFETs have source/drain regions and channel regions in the semiconductor active layer and fluid gates exposed on a surface for fluid interfacing on one side of the device layer. A multilayer metal interconnect structure is disposed on the opposite side of the device layer. This structure places the heating elements in proximity to the fluid gates enabling localized heating, precision heating, and multiplexed temperature control for multiplexed bio-sensing applications.
    Type: Grant
    Filed: May 15, 2015
    Date of Patent: July 18, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Shao Liu, Jui-Cheng Huang, Tung-Tsun Chen
  • Patent number: 9691849
    Abstract: Under one aspect, a plurality of silicon nanostructures is provided. Each of the silicon nanostructures includes a length and a cross-section, the cross-section being substantially constant along the length, the length being at least 100 microns. Under another aspect, a method of making nanostructures is provided that includes providing a silicon wafer including a thickness and first and second surfaces separated from one another by the thickness; forming a patterned layer of metal on the first surface of the silicon wafer; generating a current through the thickness of the silicon wafer, the metal oxidizing the silicon wafer in a region beneath the patterned layer of the metal; and exposing the silicon wafer to an etchant in the presence of the current, the etchant removing the oxidized region of the silicon wafer so as to define a plurality of nanostructures. Methods of transferring nanowires also are provided.
    Type: Grant
    Filed: April 9, 2015
    Date of Patent: June 27, 2017
    Assignee: Alphabet Energy, Inc.
    Inventors: Jeffrey M. Weisse, John P. Reifenberg, Lindsay M. Miller, Matthew L. Scullin
  • Patent number: 9646874
    Abstract: Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.
    Type: Grant
    Filed: August 5, 2013
    Date of Patent: May 9, 2017
    Assignee: Sandia Corporation
    Inventors: Kenneth Wojciechowski, Roy H. Olsson, Peggy J. Clews, Todd Bauer
  • Patent number: 9640945
    Abstract: Method in which, in order to actuate a wavelength-tunable laser diode in a spectrometer, a power-time function is predetermined instead of a current-time function, wherein the laser diode is tuned periodically over a wavelength range in accordance with the power-time function. For this purpose, a current profile (i) with which the laser diode is actuated is determined from the power-time function and measured values of the voltage (u) present at the laser diode.
    Type: Grant
    Filed: February 11, 2014
    Date of Patent: May 2, 2017
    Assignee: Siemens Aktiengesellschaft
    Inventor: Franz Steinbacher
  • Patent number: 9632630
    Abstract: A touch panel structure is provided. The touch panel structure includes a sapphire substrate having a crystal axis, a crystal structure and a transmittance, wherein the crystal axis includes one selected from a group consisting of c-axis (0001), a-axis (1210), a-axis (1 120), a-axis (2110), a-axis (1120), a-axis (21 10), a-axis (1210), m-axis (1010), m-axis (1100), m-axis (0110), m-axis (1010), m-axis (1100), m-axis (0110), r-axis (1011), r-axis (1011), r-axis (0111), r-axis (011 1), r-axis (1101) and r-axis (1101), the crystal structure is a single-crystal structure, and the transmittance is one of percentages larger than and equal to 80%; and a sensing module including a first sensing layer directly disposed on the sapphire substrate.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: April 25, 2017
    Assignee: Tera Xtal Technology Corp.
    Inventors: Wei-Hsiang Wang, Chuan-Lang Lu