Abstract: An emissive display device includes a polycrystalline semiconductor including a channel, source region, and drain region of a driving transistor disposed on a substrate. The device includes a gate electrode of the driving transistor overlapping the channel of the driving transistor, an oxide semiconductor including a channel, a source region, and a drain region of a second transistor disposed on the substrate, and a first connection electrode. The first connection electrode includes a first connector electrically connected to the gate electrode of the driving transistor, a second connector electrically connected to a second electrode of the second transistor, and a main body disposed between the first connector and the second connector. The device includes an initialization voltage line disposed on the substrate and applying an initialization voltage. The initialization voltage line surrounds at least a part of the second connector of the first connection electrode.

Abstract: An array base plate, a method for manufacturing same, and a display panel are disclosed. The array base plate includes: an active layer including a body portion, and a first conduction portion and a second conduction portion disposed on two sides of the active layer; an etching protective layer and an ohmic contact layer disposed in a same layer, where the etching protective layer is located on the body portion, and the ohmic contact layer is located on the first conduction portion and the second conduction portion; and a source and a drain separately disposed on the ohmic contact layer located on the first conduction portion and the second conduction portion.

Abstract: A display device can include a plurality of sub-pixels disposed on a substrate; a storage capacitor disposed in each of the plurality of sub-pixels; a buffer layer disposed on the storage capacitor; a transistor disposed on the buffer layer in each of the plurality of sub-pixels; and a light emitting element disposed on the transistor in each the plurality of sub-pixels, in which the plurality of sub-pixels include a first sub-pixel, a second sub-pixel, and a third sub-pixel, each of the first, second and third sub-pixels being configured to emit a different color of light, at least one of the plurality of sub-pixels includes a metal layer disposed below the transistor, and the metal layer is connected to one electrode of the storage capacitor.

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate, and a first signal line and a second signal line that are located on a side of the base substrate. Both the first signal line and the second signal line are located in a first metal layer and extend along a first direction. The distance between at least part of a surface of the first signal line facing the base substrate and a plane where the base substrate is located is defined by D1. The distance between at least part of a surface of the second signal line facing the base substrate and the plane where the base substrate is located is defined by D2, such that D2 is not equal to D1.

Abstract: A display panel and a display device are provided. The display panel includes a substrate, a driving circuit, and a first light blocking layer. The driving circuit includes an oxide transistor and a silicon transistor disposed at the substrate. The oxide transistor includes a first active layer. An orthographic projection of the first light blocking layer on the substrate at least overlaps an orthographic projection of the first active layer on the substrate.

Abstract: The method of manufacturing a display device includes preparing a substrate having a first and second area surrounding a portion of the first area, forming a semiconductor layer in the first area, forming a first insulating layer covering the semiconductor layer, forming a gate electrode layer that at least partially overlaps the semiconductor layer, forming a pad electrode layer in the second area, forming a second insulating layer covering the gate electrode layer, forming contact holes that at least partially expose the semiconductor layer and the gate electrode layer, and forming a conductive layer positioned in the contact holes and including a first and second layer. The forming of the conductive layer includes forming a first layer material and a second layer material, and removing a portion of the first layer material and a portion of the second layer material to expose the second insulating layer.

Abstract: The present disclosure provides a display substrate, a manufacturing method thereof, and a display device. The display substrate includes a base substrate and a plurality of pixels arranged on the base substrate, each pixel includes a plurality of sub-pixels, and each sub-pixel includes a first active layer, a first gate insulation layer, a gate electrode, a second gate insulation layer, a second active layer, a first insulation layer, a source electrode and a drain electrode laminated one on another. The source electrode is connected with the first active layer through a via hole penetrating through the first insulation layer, the second gate insulation layer and the first gate insulation layer, and the source electrode and the drain electrode are connected with the second active layer through a via hole penetrating through the first insulation layer.

Abstract: A conductive pattern is disclosed that includes a conductive layer including aluminum, a first capping layer disposed on the conductive layer and including titanium, and a second capping layer disposed on the first capping layer and including titanium nitride. A mixed region in which the aluminum and the titanium are mixed with each other is disposed in at least portions of the conductive layer and the first capping layer.

Abstract: A display panel and a display device are provided. The display panel includes: a sub-pixel including a pixel circuit and a light-emitting element, the light-emitting element including a first electrode; a first insulating layer, the first electrode being connected with the pixel circuit through a first via hole penetrating the first insulating layer; a pixel definition layer including an opening; the first electrode includes a main body portion and a connecting portion, the main body portion is at least partially overlapped with the opening, the connecting portion is at least partially overlapped with the first via hole, a size of the connecting portion at the first via hole in a first direction is ? to ? of a size of the main body portion in the first direction.

Abstract: A display panel and a display device are provided. The display panel comprises a substrate, a source and drain metal layer, a first planarization layer, an auxiliary metal layer, a second planarization layer, an anode and a light emitting pixel. The anode comprises a first anode part corresponding to the light emitting pixel. By removing the auxiliary metal layer directly below the first anode part, the orthographic projection of the auxiliary metal layer on the substrate is outside the orthographic projection of the first anode part on the substrate, which helps to eliminate horizontal diffraction fringes.

Abstract: The present disclosure provides a display substrate and a display device. The display substrate includes a pixel circuit, and the pixel circuit includes a light-emitting element, a driving circuit and a capacitor circuit. The driving circuit is configured to drive the light-emitting element to emit light; a first terminal of the capacitor circuit is electrically connected to a control terminal of the driving circuit, and a second terminal of the capacitor circuit is electrically connected to a data writing-in node; the capacitor circuit includes at least two capacitors connected in parallel with each other.

Abstract: A display apparatus includes a display panel in which a through-opening is defined, where the display panel includes a first pixel area in which a first pixel is disposed, a second pixel area in which a second pixel is disposed, and a connection area extending from the first pixel area to the second pixel area, where an edge of the first pixel area, an edge of the connection area, and an edge of the second pixel area define at least a part of the through-opening passing through the display panel, and where a thickness of the display panel in the connection area is less than a thickness of the display panel in the first pixel area.

Abstract: Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer.

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

Abstract: A display panel includes a substrate; and a thin film transistor (TFT) array layer disposed on the substrate, the TFT array layer being provided with a first TFT, a plurality of second TFTs, and a storage capacitor arranged at intervals therein; wherein the first TFT comprises a polysilicon semiconductor layer and a first gate electrode laminated on each other, each of the second TFTs comprises an oxide semiconductor layer and a second gate electrode laminated on each other, the storage capacitor comprises a first polar plate and a second polar plate opposite to each other, the first polar plate is disposed in a same layer and comprises a same material as the first gate electrode, and the second polar plate is disposed in a same layer and comprises a same material as the second gate electrode.

Abstract: A transparent display device is disclosed, which may have high light transmittance in a non-display area as well as a display area, and may increase or maximize a light emission area in a non-transmissive area. The transparent display device comprises a substrate provided with a display area, in which a plurality of subpixels are disposed, and a non-display area adjacent to the display area, anode electrodes provided in each of the plurality of subpixels over the substrate, a light emitting layer provided over the anode electrodes, a cathode electrode provided over the light emitting layer, a pixel power line provided over the substrate and extended in the display area in a first direction, and a common power line provided over the substrate and extended in the display area in the first direction. The display area includes a non-transmissive area provided with the common power line and the pixel power line, and a transmissive area provided between the common power line and the pixel power line.

Abstract: A semiconductor device includes a thin-film transistor. The thin-film transistor comprises an oxide semiconductor layer, a gate insulating layer, a gate electrode overlapped on the oxide semiconductor layer through the gate insulating layer, a source electrode in contact with the oxide semiconductor layer, a drain electrode in contact with the oxide semiconductor layer and n (n is a natural number) metal layer(s) in contact with the oxide semiconductor layer and disposed across the oxide semiconductor layer between the source electrode and the drain electrode. The oxide semiconductor layer has (n+1) channel regions between the source electrode and the drain electrode in a plan view.

Abstract: An organic light-emitting display apparatus includes: a display unit including an organic light-emitting element, a driving transistor electrically connected to the organic light-emitting element, and a capacitor; and a pad unit connected to the display unit, the capacitor including: a first conductive layer disposed on a substrate; a second conductive layer interposed between the substrate facing a first surface of the first conductive layer; and a third conductive layer disposed facing a second surface of the first conductive layer opposing the first surface of the first conductive layer, the third conductive layer being electrically connected to the second conductive layer.

Abstract: A pixel driving circuit includes a first thin film transistor having a double-gate structure, a conductive layer and a second thin film transistor. The first thin film transistor includes a first active layer. The first active layer includes a first and second semiconductor portions and a conductor portion located therebetween. The conductor portion has a first doping concentration. The conductive layer is at least partially opposite to the conductor portion, so that the conductive layer and the conductor portion form a capacitor. The conductive layer is configured to electrically connect to an initial voltage terminal. The second thin film transistor includes a second active layer and a first gate. A portion of the second active layer directly opposite to the first gate has a second doping concentration, and the second doping concentration is lower than the first doping concentration.

Abstract: The present application provides a display panel and a display device, the display panel includes a transistor located in a display region, the transistor is at least one of a main transistor, an auxiliary transistor, and a voltage divider transistor. The transistor includes a channel located above a semiconductor layer and a source electrode and a drain electrode located on an electrode layer. The drain electrode includes a drain electrode tip region, and an orthographic projection of the drain electrode tip region on the semiconductor layer is located outside the channel.

Abstract: A display panel and a display device are provided. The display panel includes a first display area and a second display area, the first display area is provided with a plurality of first pixel repeating units disposed in array, and the second display area is provided with a plurality of second pixel repeating units disposed in array, wherein a quantity of the first light-emitting units included in the first pixel repeating unit is equal to a quantity of the second light-emitting units included in the second pixel repeating unit, and an area of the first pixel repeating unit is smaller than an area of the second pixel repeating unit.

Abstract: A display device having a plurality of pixel structures, each of the plurality of the pixel structures including: a substrate; a first active pattern on the substrate; a first gate line on the first active pattern and extending in a first direction; a first connecting pattern on the first gate line and configured to transmit an initialization voltage; a second connecting pattern on the first connecting pattern and electrically connected to the first active pattern and the first connecting pattern; and a first electrode on the second connecting pattern and configured to be initialized in response to the initialization voltage.

Abstract: The display apparatus includes a substrate, a first active layer disposed on the substrate, a first gate layer disposed on a layer covering the first active layer, the first gate layer including a first gate electrode, a second gate layer disposed on a layer covering the first gate layer, the second gate layer including an initialization line including a first part of a second electrode; a second active layer disposed on a layer covering the second gate layer, the second active layer including a second active region overlapping the first part of the second electrode; a third gate layer disposed on a layer covering the second active layer, the third gate layer including a second part of the second electrode overlapping the second active region; and a first source/drain layer disposed on a layer covering the third gate layer, the first source/drain layer including a first connection line.

Abstract: An optical sensor array substrate and an optical fingerprint reader are provided. The optical sensor array substrate includes a substrate including a detection area which includes a plurality of photosensitive pixels. Photosensitive pixel includes: a TFT arranged on the substrate; a storage capacitor arranged on the substrate and having a first capacitor plate, and a second capacitor plate electrically connected to the source or drain of the TFT; a photosensitive element, having one end electrically connected to the second capacitor plate; a first electrode layer electrically connected to another end of the photosensitive element. On the substrate, an orthographic projection of the second capacitor plate at least partially overlaps with that of the first electrode layer, and the first capacitor plate is located in the same layer and has the same material as the gate of the TFT.

Abstract: An organic light-emitting display apparatus includes: a display unit including an organic light-emitting element, a driving transistor electrically connected to the organic light-emitting element, and a capacitor; and a pad unit connected to the display unit, the capacitor including: a first conductive layer disposed on a substrate; a second conductive layer interposed between the substrate facing a first surface of the first conductive layer; and a third conductive layer disposed facing a second surface of the first conductive layer opposing the first surface of the first conductive layer, the third conductive layer being electrically connected to the second conductive layer.

Abstract: A display device includes a substrate including a polymer film, a first active pattern above the substrate, and including a first channel region, a gate electrode above the first active pattern, and overlapping the first channel region, a first storage capacitor electrode above the gate electrode, and overlapping the gate electrode, a second active pattern at a layer above the first storage capacitor electrode, and including a second channel region, a first gate line above the second active pattern, and overlapping the second channel region, and a blocking pattern between the first channel region and the first gate line in a plan view.

Abstract: A display apparatus includes a first semiconductor layer disposed on a substrate; a first gate layer disposed on the first semiconductor layer, the first gate layer including a driving gate electrode; a second gate layer disposed on the first gate layer, the second gate layer including a capacitor upper electrode; a first connecting electrode layer disposed on the second gate layer, the first connecting electrode layer including a transfer wiring; a second connecting electrode layer disposed on the first connecting electrode layer, the second connecting electrode layer including a horizontal connection wiring extending in a first direction; and a third connecting electrode layer disposed on the second connecting electrode layer, the third connecting electrode layer including a vertical connection wiring extending in a second direction that intersects the first direction.

Abstract: The present disclosure provides a thin film transistor, a display panel and a display device. The thin film transistor includes a semiconductor material layer, a first insulating layer and a gate layer. The semiconductor material layer is at a side of a base substrate, and includes a first channel portion, a first doped portion and a second channel portion sequentially connected. The first insulating layer is at a side of the semiconductor material layer facing away from the base substrate. The gate layer is at a side of the first insulating layer facing away from the semiconductor material layer, and includes a first gate portion and a second gate portion. An orthographic projection of the first gate portion on the base substrate coincides with an orthographic projection of the first channel portion on the base substrate, and the first gate portion is configured to receive a gate driving signal.

Abstract: The present disclosure provides a display substrate, a manufacturing method thereof, and a display device. The display substrate includes a display area and a non-display area located at a periphery of the display area, wherein the display area includes a plurality of pixel opening areas and a pixel spacing area located between the pixel opening areas; the display substrate further includes: a first electrode, wherein at least part of the first electrode is located in the pixel spacing area, an orthographic projection of the first electrode on a substrate of the display substrate does not overlap an orthographic projection of the pixel opening area on the substrate; and a second electrode electrically connected to the first electrode and located in the non-display area.

Abstract: A display device includes a display area and a peripheral area outside the display area, and includes: a substrate; a first semiconductor layer located in the display area and arranged on the substrate; a second semiconductor layer arranged on the first semiconductor layer; a data line located in the display area and extending in a first direction; an input line located in the peripheral area; a connection line located in the display area and electrically connecting the data line and the input line to each other; and a shielding layer located in the display area and located between the first semiconductor layer and the connection line in a cross-section view. The shielding layer overlaps at least a portion of the connection line in a plan view.

Abstract: A display device includes a transistor having an oxide semiconductor layer, a gate electrode opposed to the semiconductor layer, and a gate insulating film arranged between the oxide semiconductor layer and the gate electrode, a drain electrode connected to the transistor, a pixel electrode connected to the drain electrode, and a first insulating film and a second insulating film arranged between the drain electrode and the pixel electrode.

Abstract: A display apparatus includes a substrate including at least one hole disposed in a hole area of the substrate, a thin film transistor disposed on the substrate, a light-emitting component disposed on the substrate and electrically connected to the thin film transistor, an insulating layer disposed on the substrate, a thin film encapsulation layer disposed on the substrate, and a laser blocking layer. The substrate includes a display area and a non-display area that is disposed between the display area and the hole area. The laser blocking layer is disposed on the insulating layer in the non-display area.

Abstract: This application discloses an array substrate and a display panel. The array substrate includes a substrate, a plurality of active switches, and a transparent conductive layer. The active switches are formed above the substrate. The transparent conductive layer is formed above the active switches, and is connected to each of the active switches. Each of the active switches includes a metal layer. A hollow structure is mounted on the transparent conductive layer. The hollow structure is located in an overlapping region between the transparent conductive layer and the metal layer.

Abstract: A display substrate includes a base substrate, a first conductive pattern, an organic layer and a second conductive layer. A via hole penetrating the organic layer is arranged in the organic layer along a direction perpendicular to the base substrate, a position of the via hole corresponds to a position of the first conductive pattern, and the second conductive layer is electrically connected to the first conductive pattern through the via hole. The display substrate further includes a filling structure for filling the via hole, a distance difference between a distance from a surface of the filling structure on a side away from the base substrate to the base substrate and a distance from a surface of the organic layer on a side away from the base substrate to the base substrate is smaller than a preset threshold.

Abstract: A display device includes a metal layer disposed on a substrate; a transistor disposed on the metal layer; and a light emitting element electrically connected to the transistor, wherein the transistor includes a semiconductor layer at least partially overlapping the metal layer, the semiconductor layer includes a first region, a second region, and a channel region disposed between the first region and the second region, and the metal layer overlaps the second region and the channel region and is spaced apart from the first region in a plan view.

Abstract: An object is to provide a piezoelectric body having a value indicating a higher performance index (d33, e33, C33, g33, and/or k2) than aluminum nitride not doped with any element. The piezoelectric body is represented by a chemical formula Al1-X-YMgXMYN where X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1.

Abstract: A crystalline silicon semiconductor layer includes a first channel region and a second conductor region. An oxide semiconductor layer includes a second channel region and a second conductor region. An lower metal layer includes a lower wire. The lower wire is in contact with a first conductor region in a first contact hole. The first conductor region and the second conductor region are electrically connected together through the lower wire.

Abstract: A display device includes a substrate and pixels. The substrate includes: a display area including pixel areas, each including a first area and a second area; and a non-display area enclosing at least one side of the display area. The pixels are disposed on the pixel areas, each pixel including light emitting elements. Each pixel further includes: a pixel circuit part disposed on the first area and including at least one transistor and at least one capacitor; and a display element part disposed on the second area and including an emission area to emit light. Each of the pixel circuit part and the display element part has a multi-layer structure including one or more conductive layers and one or more insulating layers. At least one layer of the pixel circuit part and at least one layer of the display element part are disposed in a same layer.

Abstract: An electro-optical device includes a pixel electrode disposed in a display area, a first wiring line, a second wiring line, an insulating layer disposed between the first wiring line and the second wiring line, a capacitor disposed in the display area, and including a first electrode, a capacitance insulation film, and a second electrode stacked in this order on the second wiring layer side surface of the insulating layer, with the first electrode being electrically connected to the second wiring line, and a relay electrode disposed outside the display area, and through the insulating layer, contacted with the first wiring line at the insulating layer side surface of the first wiring layer line and the second wiring line at an opposite side surface of the second wiring line with respect to the insulating layer side.

Abstract: A display device and a method of manufacturing a display device are provided. An embodiment of a display device includes a substrate; a first conductive layer disposed on the substrate; a first insulating layer disposed on the first conductive layer; a second conductive layer connected to the first conductive layer through a first contact hole in the first insulating layer; a second insulating layer filling an inside of the first contact hole; and a third insulating layer disposed on the second conductive layer and the second insulating layer. The first insulating layer includes a first region that overlaps the second conductive layer and a second region that does not overlap the second conductive layer, and a top surface of the first region of the first insulating layer is positioned higher than a top surface of the second region of the first insulating layer.

Abstract: A display device includes a first substrate. A transistor is disposed on the first substrate. A light-emitting element is connected to the transistor. An insulating layer is disposed between the transistor and the light-emitting element. A second substrate at least partially overlaps the first substrate. A color conversion layer is disposed on the second substrate. The insulating layer includes a first insulating layer and a second insulating layer. A distance between the first insulating layer and the first substrate is less than a distance between the second insulating layer and the first substrate. The first insulating layer includes a light blocking material.

Abstract: A transistor includes a first gate electrode, a first capping layer, a crystalline semiconductor oxide layer, a second capping layer, a first gate dielectric layer, and source/drain contacts. The first capping layer, the crystalline semiconductor oxide layer, and the second capping layer are sequentially disposed over the first gate electrode. Sidewalls of the second capping layer are aligned with sidewalls of the crystalline semiconductor oxide layer. The first gate dielectric layer is located between the first gate electrode and the first capping layer. The source/drain contacts are disposed on the second capping layer. The crystalline semiconductor oxide layer and the source/drain contacts are located on two opposite sides of the second capping layer.

Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.

Abstract: A semiconductor memory device includes a first word line formed over a first active region. In some embodiments, a first metal line is disposed over and perpendicular to the first word line, where the first metal line is electrically connected to the first word line using a first conductive via, and where the first conductive via is disposed over the first active region. In some examples, the semiconductor memory device further includes a second metal line and a third metal line both parallel to the first metal line and disposed on opposing sides of the first metal line, where the second metal line is electrically connected to a source/drain region of the first active region using a second conductive via, and where the third metal line is electrically connected to the source/drain region of the first active region using a third conductive via.

Abstract: A transparent display device is disclosed, which may enlarge a transmissive area and increase or maximize a light emission area in a non-transmissive area. The transparent display device includes a substrate provided with a display area including a transmissive area and a non-transmissive area, in which a plurality of subpixels are disposed, and a non-display area adjacent to the display area, at least one inorganic insulating film on the substrate, at least one organic insulating film on the at least one inorganic insulating film, anode electrodes provided in each of the plurality of subpixels over the at least one organic insulating film, a bank provided among the anode electrodes, a light emitting layer on the anode electrodes, and a cathode electrode on the light emitting layer, wherein the at least one inorganic insulating film, the at least one organic insulating film and the bank are provided in only the non-transmissive area.

Abstract: A display substrate, a manufacturing method thereof, and a display device are provided. The display substrate includes a base substrate and a white OLED display unit on the base substrate, and further includes: an optical adjustment structure on a light emitting side of the white OLED display unit, where the optical adjustment structure is in a peripheral region of each pixel region. The optical adjustment structure is configured to absorb light in a first wavelength range or convert light in a first wavelength range into light in a second wavelength range.

Abstract: A display panel and a display device are provided according to embodiments of the application. In the display panel, a first metal electrode layer further includes multiple second metal electrode lines which are located in the same layer as multiple first metal electrode lines. An end of the second metal electrode line is electrically connected with the drain of a thin film transistor; and the other end of the second metal electrode line is electrically connected with the pixel electrode, so that the pixel electrode is electrically connected with the drain of the corresponding thin film transistor through the second metal electrode line. The area occupied by the electric connection region of the pixel electrode and the drain of the corresponding thin film transistor is reduced and the display area of the display panel is increased, when the size and the thickness of the display panel are not increased.

Abstract: A display may have an array of pixels such as liquid crystal display pixels. The display may include short pixel rows that span only partially across the display and full-width pixel rows that span the width of the display. The gate lines coupled to the short pixel rows may extend into the inactive area of the display. Supplemental gate line loading structures may be located in the inactive area of the display to increase loading on the gate lines that are coupled to short pixel rows. The supplemental gate line loading structures may include data lines and doped polysilicon that overlap the gate lines in the inactive area. In displays that combine display and touch functionality into a thin-film transistor layer, supplemental loading structures may be used in the inactive area to increase loading on common voltage lines that are coupled to short rows of common voltage pads.

Abstract: A thin-film transistor array substrate includes a substrate, a thin-film transistor disposed on the substrate, where the thin-film transistor includes a semiconductor layer including a channel area and a gate electrode overlapping the channel area, and a storage capacitor including a lower electrode disposed on the channel area and an upper electrode disposed to overlap the lower electrode, where an opening having a single closed curve-shape is defined through the upper electrode. On a plane, the upper electrode includes a first recessed portion and a second recessed portion, each exposing an edge of the lower electrode.

Abstract: A field effect device is provided. The field effect device includes an active gate structure, a gate contact within the active gate structure, wherein the gate contact is the same height as the active gate structure, and a gate cut dielectric on opposite sides of the gate contact and active gate structure.