Abstract: An optical sensor array substrate and an optical fingerprint reader are provided. The optical sensor array substrate includes a substrate including a detection area which includes a plurality of photosensitive pixels. Photosensitive pixel includes: a TFT arranged on the substrate; a storage capacitor arranged on the substrate and having a first capacitor plate, and a second capacitor plate electrically connected to the source or drain of the TFT; a photosensitive element located on one side of the storage capacitor away from the substrate, and having one end electrically connected to the second capacitor plate; a first electrode layer located on one side of the photosensitive element away from the substrate and electrically connected to another end of the photosensitive element. An orthographic projection of the second capacitor plate on the substrate at least partially overlaps with an orthographic projection of the first electrode layer on the substrate.

Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.

Abstract: A display device comprises a substrate including emission areas, and light blocking areas adjacent to the emission areas, a thin film transistor layer comprising a thin film transistor disposed on the substrate, and a connection line electrically connected to the thin film transistor, a light emitting element layer disposed on the thin film transistor layer and comprising light emitting elements corresponding to the emission areas, an encapsulation layer overlapping the light emitting element layer, and a pad portion disposed on the encapsulation layer and in electrical contact with the connection line through a contact hole in the encapsulation layer.

Abstract: A pixel is discussed, which is disposed in a pixel area defined by a gate line, a data line and a pixel power line, and includes a light emission portion and a pixel circuit, wherein the pixel circuit can include a protrusion electrode protruded from the gate line along a length direction of the data line, and first and second thin film transistors disposed in parallel between the light emission portion and the gate line, using the protrusion electrode as a gate electrode.

Abstract: A liquid crystal coherent transparent display screen and a liquid crystal-laser transparent display system are provided. The liquid crystal coherent transparent display screen includes a first substrate, a second substrate, a first electrode layer, a first partial reflector, a first alignment layer, a second electrode layer, a second partial reflector, a second alignment layer, and a liquid crystal layer. The first partial reflector and the second partial reflector form an optical resonant microcavity, to replace the polarizer, the analyzer and the optical filters in conventional technology, thereby improving the light transmittance of liquid crystal transparent display.

Abstract: A display device includes a semiconductor substrate, an isolation layer, a light-emitting layer and a second electrode. The semiconductor substrate has a pixel region and a peripheral region located around the pixel region. The semiconductor substrate includes first electrodes and a driving element layer. The first electrodes are disposed in the pixel region and the first electrodes are electrically connected to the driving element layer. The isolation layer is disposed on the semiconductor substrate. The isolation layer includes a first isolation pattern disposed in the peripheral region, and the first isolation pattern has a first side surface and a second side surface opposite to the first side surface. The light-emitting layer is disposed on the isolation layer and the first electrodes, and covers the first side surface and the second side surface of the first isolation pattern. The second electrode is disposed on the light-emitting layer.

Abstract: The disclosure discloses an array substrate and a preparation method thereof, a display panel and a display device. The array substrate includes: a substrate, and a first metal layer, a metal oxide layer and a second metal layer which are sequentially stacked and isolated from each other on the substrate; the first metal layer includes a light shading metal, a first electrode, and an anti-static line; the metal oxide layer includes a first active layer; the second metal layer includes a gate line and a second electrode; the gate line is connected with the anti-static line through a first TFT, one of the first electrode and the second electrode forms the source and drain electrodes of the first TFT, and the other forms the gate electrode of the first TFT; and the source is electrically connected with the gate line, and the drain is electrically connected with the anti-static line.

Abstract: An emissive display device includes a polycrystalline semiconductor including a channel, source region, and drain region of a driving transistor disposed on a substrate. The device includes a gate electrode of the driving transistor overlapping the channel of the driving transistor, an oxide semiconductor including a channel, a source region, and a drain region of a second transistor disposed on the substrate, and a first connection electrode. The first connection electrode includes a first connector electrically connected to the gate electrode of the driving transistor, a second connector electrically connected to a second electrode of the second transistor, and a main body disposed between the first connector and the second connector. The device includes an initialization voltage line disposed on the substrate and applying an initialization voltage. The initialization voltage line surrounds at least a part of the second connector of the first connection electrode.

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

Abstract: Disclosed is a display device having improved reliability. The display device includes a first transistor disposed on a substrate, an electrical property of the first transistor being shifted from a first initial value in a decreasing direction; a second transistor disposed on the substrate, an electrical property of the second transistor being shifted from a second initial value in an increasing direction; and a first upper barrier conductive layer disposed so as to overlap a first active layer of the first transistor and not to overlap a second active layer of the second transistor, whereby reliability of each of the first and second transistors is improved.

Abstract: The present disclosure provides a display panel and a display device including the display panel. The display panel has a display region including a first display region and a second display region, and the first display region has a smaller sub-pixel density than the second display region. Light-shielding structures are arranged in the first display region, and one light-shielding structure overlaps a light-emitting region of at least one first sub-pixel. The light-shielding structure group constituted by the light-shielding structures includes main and auxiliary light-shielding structures having the same shape. When viewed from the top at the same viewing angle, the auxiliary light-shielding structure is equivalent to a structure obtained by rotating the main light-shielding structure by a certain angle in a plane where the main light-shielding structure is located. With this design, a light diffraction phenomenon is alleviated and the imaging quality of the under-screen optical device is improved.

Abstract: An electronic device is provided. The electronic device includes a substrate, a first wire, a first semiconductor element and a second semiconductor element. The substrate has a display region and a peripheral region adjacent to the display region. The first wire is disposed in the display region and the peripheral region. The first semiconductor element is disposed in the display region. The second semiconductor element is disposed in the peripheral region and adjacent to the first semiconductor element. The first semiconductor element and the second semiconductor element cross the first wire in two parts respectively and the two parts of the second semiconductor element is less than the two parts of the first semiconductor element in distance.

Abstract: A display device includes a display panel in which a plurality of pixels including first, second, and third subpixels disposed in a region where a plurality of gate lines extending in a first direction and a plurality of data lines extending in a second direction intersect. The display device further includes a gate driving circuit configured to drive the plurality of gate lines, a data driving circuit configured to drive the plurality of data lines, and a timing controller configured to control the gate driving circuit and the data driving circuit. In the display panel, a first data voltage is applied to the first subpixel, and a second data voltage is applied to the second subpixels or the third subpixels.

Abstract: A display device comprises a first substrate, a second substrate disposed opposite to the first substrate, a scan line disposed between the first substrate and the second substrate, and a spacer disposed between the scan line and the second substrate. The spacer overlaps the scan line.

Abstract: A display apparatus includes a substrate, a light-emitting device provided on the substrate, a driving transistor device configured to control the light-emitting device, a first power supply line electrically connected to a source region of the driving transistor device, a conductive pattern electrically connected to a gate electrode of the driving transistor device, and a second power supply line electrically connected to the first power supply line, wherein the conductive pattern and the first power supply line constitute a first capacitor, and the conductive pattern and the second power supply line constitute a second capacitor, wherein the first capacitor and the second capacitor are connected in parallel.

Abstract: According to one embodiment, a display device comprises first and second substrates. The first substrate comprise first and second common electrodes, and a first pixel electrode including a pair of first sides arranged in a first direction. The second common electrode includes first and second trunk portions, and a first branch portion extending from the second trunk portion toward the first trunk portion. The first pixel electrode is located between the trunk portions. The first branch portion overlaps with the first pixel electrode between the first sides. A width of the first pixel electrode between the first sides becomes smaller toward the second trunk portion.

Abstract: According to one embodiment, an array substrate includes a semiconductor layer, scanning and signal lines, first and second insulating layers, a pedestal and a pixel electrode. The scanning line is opposed to the semiconductor layer. The first insulating layer is provided above the semiconductor layer. The signal line and the pedestal are connected to the semiconductor layer through first and second contact holes in the first insulating layer. The second insulating layer is provided above the pedestal. The pixel electrode is connected to the pedestal through a third contact hole in the second insulating layer. The signal line and the pedestal are provided in layers different from each other.

Abstract: Provided are an array substrate mother board, an array substrate, a display panel and a display device. The array substrate mother board includes array substrates, the array substrate includes a component disposing area; the array substrate includes a base substrate and a drive circuit layer, the drive circuit layer includes a first metal layer, and the first metal layer includes capacitor plates arranged in an array along the first direction and along the second direction; the plurality of array substrates include first-type array substrates, and the plurality of first-type array substrates are arranged along the first direction and are adjacent to a boundary extending along a first direction in the mother board of the array substrate.

Abstract: Embodiments of the present application provide an array substrate and a display device. The array substrate includes a plurality of sub-pixel units arranged in an array, each sub-pixel unit includes a base substrate, a thin film transistor, a pixel electrode and a common electrode, the common electrode is on a side of the base substrate, the thin film transistor and the pixel electrode are between the base substrate and the common electrode, the thin film transistor includes a control terminal, a first electrode and a second electrode, the pixel electrode is connected to the second electrode, and the control terminal is in a continuous sheet shape, an orthographic projection of a boundary of the control terminal on the base substrate is within an orthographic projection of the common electrode on the base substrate.

Abstract: A display device having a plurality of pixel structures, each of the plurality of the pixel structures including: a substrate; a first active pattern on the substrate; a first gate line on the first active pattern and extending in a first direction; a first connecting pattern on the first gate line and configured to transmit an initialization voltage; a second connecting pattern on the first connecting pattern and electrically connected to the first active pattern and the first connecting pattern; and a first electrode on the second connecting pattern and configured to be initialized in response to the initialization voltage.

Abstract: A novel input device that is highly convenient or reliable is provided. A novel input/output device that is highly convenient or reliable is provided. A semiconductor device is provided. The present inventors have reached an idea of a structure including a plurality of conductive films configured to be capacitively coupled to an approaching object, a driver circuit that selects a conductive film from a plurality of conductive films in a predetermined order, and a sensor circuit having a function of supplying a search signal and a sensing signal.

Abstract: Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer.

Abstract: A thin-film transistor array includes an insulating substrate and pixels each including a thin-film transistor, a pixel electrode, and a capacitor electrode, the pixels being formed in a matrix and located at positions where column wirings extending in a column direction intersect row wirings perpendicular to the column wirings and extending in a row direction. The thin-film transistor includes a gate electrode, a source electrode, a drain electrode, and a semiconductor pattern formed between the source electrode and the drain electrode. The pixel electrode includes two electrically conductive layers which are a lower layer electrode serving as a lower pixel electrode, and an upper layer electrode serving as an upper pixel electrode. The corresponding one of the column wirings is at a position which has no overlap with the capacitor electrode and the lower pixel electrode, and has an overlap with the upper pixel electrode, in the lamination direction.

Abstract: [Object] To provide a display apparatus that can achieve enhancement in display performance of a screen and higher definition. [Solution] There is provided a display apparatus. The drive circuit includes a drive transistor configured to control the light emitting unit, a video signal writing transistor configured to control writing of a video signal, and a capacitative element. In the drive transistor, one source/drain region is connected to a current supply line, another source/drain region is connected to the light emitting unit and a first node of the capacitative element, and a gate electrode is connected to a second node of the capacitative element. In the video signal writing transistor, one source/drain region is connected to a data line, another source/drain region is connected to the gate electrode of the drive transistor and the second node of the capacitative element, and a gate electrode is connected to a scanning line.

Abstract: A flexible display apparatus includes a flexible display panel including a flexible substrate, a display area of the flexible substrate including a thin film transistor, an organic light emitting layer and a sensor electrode, and a peripheral area of the flexible substrate including a first alignment mark in which respective portions of two metal layers are stacked; a window on a first surface of the flexible display panel; and a protective film on a second surface of the flexible display panel. The first alignment mark is aligned with a reference point of the window and with a reference point of the protective film.

Abstract: Disclosed is an array substrate. The array substrate includes a substrate and a pixel unit array. A first side of each row of pixel units is provided with a first scanning line corresponding to the row of pixel units, and the first scanning line is connected to switch elements of first-type pixel units in the row of pixel units; and the second side of each row of pixel units is provided with a second scanning line corresponding to the row of pixel units, and the second scanning line is connected to switch elements of second-type pixel units in the row of pixel units. An active layer structure of the switch element of a second-type pixel unit in an ith row of pixel units has a common region with an active layer structure of the switch element of a first-type pixel unit in an (i+1)th row of pixel units.

Abstract: An organic light-emitting device includes a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode. The organic layer includes an emission layer. The emission layer includes a first compound, a second compound, and a third compound. The first compound is represented by Formula 1, the second compound is represented by Formula 2, the third compound is represented by Formula 3, and the first compound and the second compound are different from each other.

Abstract: Embodiments of the present invention relate to a display device in which, in a structure in which an oxide semiconductor thin film transistor is disposed on an upper layer of a low temperature polycrystalline silicon thin film transistor, the hydrogen adsorption layer is disposed on the capacitor electrode located on the driving transistor among low temperature polycrystalline silicon thin film transistors, so that it is possible to prevent the reduction of an S factor due to the re-hydrogenation of the driving transistor in the heat treatment process of the oxide semiconductor thin film transistor.

Abstract: A transparent display device may optimize arrangement areas of a plurality of signal lines and circuit areas, and may prevent a luminance difference from occurring between subpixels for emitting light of the same color. The transparent display device comprises a substrate provided with transmissive areas, a first non-transmissive area provided between the transmissive areas in a first direction, and a second non-transmissive area provided between the transmissive areas in a second direction, first signal lines provided along the first non-transmissive area in the first non-transmissive area and extended from an overlapping area, in which the first non-transmissive area and the second non-transmissive area cross each other, in a direction crossing the first direction, and second signal lines provided along the second non-transmissive area in the second non-transmissive area and extended from the overlapping area in a direction crossing the second direction.

Abstract: A display device includes: a substrate; a polycrystalline semiconductor layer which includes a first electrode, a channel, and a second electrode of a driving transistor disposed on the substrate; a first gate insulating layer disposed on the polycrystalline semiconductor layer; a gate electrode of the driving transistor which is disposed on the first gate insulating layer and overlaps the channel; a lower first scan line disposed on the first gate insulating layer; a second gate insulating layer disposed on the gate electrode and on the lower first scan line; a first lower boost electrode disposed on the second gate insulating layer; a first interlayer-insulating layer disposed on the first lower boost electrode; an oxide semiconductor layer disposed on the first interlayer-insulating layer and including a first upper boost electrode overlapping the first lower boost electrode; and a first connection electrode connecting the gate electrode and the first upper boost electrode.

Abstract: A flexible display apparatus includes a flexible display panel including a flexible substrate, a display area of the flexible substrate including a thin film transistor, an organic light emitting layer and a sensor electrode, and a peripheral area of the flexible substrate including a first alignment mark in which respective portions of two metal layers are stacked; a window on a first surface of the flexible display panel; and a protective film on a second surface of the flexible display panel. The first alignment mark is aligned with a reference point of the window and with a reference point of the protective film.

Abstract: To provide a light-emitting device in which variation in luminance among pixels caused by variation in threshold voltage of transistors can be suppressed. The light-emitting device includes a transistor including a first gate and a second gate overlapping with each other with a semiconductor film therebetween, a first capacitor maintaining a potential difference between one of a source and a drain of the transistor and the first gate, a second capacitor maintaining a potential difference between one of the source and the drain of the transistor and the second gate, a switch controlling conduction between the second gate of the transistor and a wiring, and a light-emitting element to which drain current of the transistor is supplied.

Abstract: A display apparatus includes a substrate; a lower conductive layer including a protective pattern and an auxiliary conductive pattern on the substrate; a buffer layer on the lower conductive layer; an active pattern on the buffer layer and overlapping the protective pattern; a first insulation layer on the active pattern; and a first conductive layer on the first insulation layer, the first conductive layer including a gate electrode overlapping the active pattern and a load matching line overlapping the auxiliary conductive pattern.

Abstract: A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.

Abstract: A display panel and a display device are provided. A display area of the display panel includes an optical component area and a regular display area, and the optical component area and the regular display area both include light-emitting devices, so that the area of the display area becomes larger to meet the trend of full screen display. In the optical component area, a transparent conductive layer includes paired first and second etching slots, a connection wire arranged between the paired first and second etching slots, and an auxiliary layer arranged outside the paired first and second etching slots.

Abstract: The disclosure provides a capacitor and an electronic device. The capacitor is disposed on a substrate with a protrusion. The capacitor includes a first electrode, a second electrode, and an insulating layer. The first electrode has a first voltage. The second electrode has a second voltage different from the first voltage. The second electrode is closer to the substrate than the first electrode. The insulating layer is disposed between the first electrode and the second electrode. The protrusion penetrates the second electrode and extends into the insulating layer. The electronic device includes the capacitor. The capacitor and the electronic device of the embodiments in the disclosure have a better yield.

Abstract: A method for manufacturing a display device includes a pixel circuit formed on a substrate, wherein a manufacturing process of the pixel circuit includes a patterning step of a metal film performed in the following procedures (a) to (e): (a) forming the metal film on the substrate; (b) forming a first resist pattern on the metal film by a photolithographic method; (c) etching the metal film with the first resist pattern to form a first metal pattern; (d) forming by the photolithographic method on the metal film formed in the first metal pattern, a second resist pattern including a pattern shape smaller than a pattern shape of the first resist pattern; and (e) etching the metal film with the second resist pattern to form a second metal pattern.

Abstract: The present disclosure relates to a method for manufacturing a film for a decoration element, the method including depositing two or more islands on one surface of a film; and forming a pattern portion by dry etching the film using the island as a mask.

Abstract: The present invention provides an array substrate and a display panel, the array substrate comprises: a first metal layer comprising a plurality of gate routings and a plurality of common electrode routings, at least one of the plurality of common electrode routings is arranged discontinuously and comprises a plurality of common electrode spacers spaced apart from each other; a second metal layer comprising a plurality of common electrode connecting portions; and a first insulating layer provided with a plurality of first through holes, adjacent two of the plurality of common electrode spacers are electrically connected to a common electrode connecting portion through two of the plurality of first through holes.

Abstract: A display device includes an opening area formed in a display area and a non-display area surrounding the opening area, wherein the display area includes a plurality of pixels and a plurality of lines connected to the plurality of pixels, the non-display area includes a connection member connected to at least one of the plurality of lines of the display area, and the connection member is disposed in a different layer from the connected line and is electrically connected to the line by a via-electrode.

Abstract: A light, emitting element includes a flexible plate-like portion having a glass substrate, and an organic functional layer formed on one surface side of the glass substrate. The organic functional layer includes a light emitting layer. When the plate-like portion is curved in a prescribed curving direction, and one surface of the plate-like portion is a concave surface, and the other surface thereof is a convex surface, a surface which is positioned on the concave surface side among both surfaces of the glass substrate is referred to as a first surface. When the plate-like portion is curved in a curving direction, and the one surface of the plate-like portion is a concave surface, and the other surface thereof is a convex surface, a compressive stress is applied to a portion whose distance from the first surface of the glass substrate is less than or equal to L (L>T/2).

Abstract: The present disclosure illustrates a repair method for an active matrix substrate. The repair method includes steps: performing the broken-line inspection process to inspect whether the broken line exists on the first and second gate lines; if one first gate line is inspected to be broken, performing a source line repair-section forming process to cut off the cut portions of the second source lines disposed at two sides of a pixel electrode corresponding to a broken location of the first gate line, to form source line repair sections overlapping with the broken first gate line and the second gate line; performing a gate line repair-section forming process on the second gate line, adjacent to the broken first gate line, to cut off the cut portions of the second gate line to form a gate line repair section overlapping with the second source lines; and performing a connection process.

Abstract: An organic light-emitting display apparatus including an organic light-emitting diode emitting visible light, a driving thin film transistor driving the organic light-emitting diode, and a compensation thin film transistor. The compensation thin film transistor includes a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode. The compensation gate electrode includes a first gate electrode, and a second gate electrode electrically connected to the first gate electrode. The compensation drain electrode is electrically connected to the driving gate electrode of the driving thin film transistor.

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.

Abstract: A chip is provided. The chip includes a flexible substrate, a plurality of thin-film transistors, a redistribution layer, a first power rail layer, and a second power rail layer. The plurality of thin-film transistors are disposed on the flexible substrate. The redistribution layer is disposed above the plurality of thin-film transistors. The first power rail layer is disposed above the redistribution layer. The first power rail layer provides a first voltage to the plurality of thin-film transistors. The second power rail layer is disposed above the first power rail layer. The second power rail layer provides a second voltage to the plurality of thin-film transistors, wherein the second power rail layer is disposed in a grid shape.

Abstract: Disclosed is a semiconductor device including a gate wiring, an active layer, a gate insulating film, a first wiring, a second wring, and a first semiconductor film. The gate wiring includes a gate electrode. The active layer overlaps with the gate electrode and contains an oxide semiconductor. The gate insulating film is sandwiched by the gate electrode and the active layer. The first wiring and the second wiring are each located over the active layer and respectively include a first terminal and a second terminal which are electrically connected to the active layer. The first semiconductor film is located under and in contact with the first wiring and contains the oxide semiconductor.

Abstract: Provided is a piezoelectric thin film device in which lattice mismatch between a piezoelectric thin film and a lower electrode layer (first electrode layer) is reduced. A piezoelectric thin film device 10 comprises a first electrode layer 6a and a piezoelectric thin film 2 laminated directly on the first electrode layer 6a; the first electrode layer 6a includes an alloy composed of two or more metal elements; the first electrode layer 6a has a body-centered cubic lattice structure; and the piezoelectric thin film 2 has a wurtzite structure.

Abstract: A display unit which can realize reduction in thickness and weight of the display unit by omitting a void between a touch panel and a display panel, and its manufacturing method. Whole faces of the touch panel and the display panel are directly bonded together with an adhesive layer in between. The display panel has a structure wherein a driving substrate in which organic light emitting devices are formed and a sealing substrate are bonded together with an adhesive layer in between.

Abstract: An array substrate is provided, including a base substrate, a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode that are sequentially provided, and further including a first insulating layer, a second insulating layer, a third insulating layer, at least one first via, and at least one second via. Each first via penetrates through the third insulating layer, and in each pixel unit with plural chromatic color resists, each first via is between adjacent two chromatic color resists and filled by one of the adjacent two chromatic color resists. Each second via penetrates through the second insulating layer, the at least one second via is in one-to-one correspondence with the at least one first via, each second via is filled by a chromatic color resist having a same color as that of the chromatic color resist in the corresponding first via.

Abstract: Embodiments of the present disclosure provide a flexible array substrate, a manufacturing method thereof, and a flexible display device, which relate to the field of display technology, and can reduce the difficulty of wiring, decrease the IR drop, and improve the problem that the wiring is prone to breakage when bent. The flexible array substrate includes a substrate, the substrate including a first sub-substrate and a second sub-substrate which are stacked, the second sub-substrate including at least one via hole; a wiring layer disposed between the first sub-substrate and the second sub-substrate; and a pixel array layer disposed on a side of the second sub-substrate facing away from the first sub-substrate; the wiring layer including a wiring, wherein the pixel array layer is electrically connected to the wiring through the at least one via hole.