Abstract: A semiconductor device includes a capacitor with an insulator having an improved durability. In the semiconductor device, a capacitor lower electrode 11 of the cylindrical capacitor includes a standing wall portion 11b which is formed of a polysilicon layer having a large crystal grain diameter (1000.ANG.-10000.ANG.).

Abstract: A semiconductor material and a method for forming the same, the semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein carbon, nitrogen, and oxygen each at a concentration of 5.times.10.sup.19 atoms.multidot.cm.sup.-3 or lower, preferably 1.times.10.sup.19 atoms.multidot.cm.sup.-3 or lower, without melting the amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, the semiconductor materials being useful for fabricating compact thin film semiconductor devices such as thin film transistors improved in device characteristics.

Abstract: This invention relates to a semiconductor device, in which a singlecrystal semiconductor substrate whose principal surface is a (111) plane is etched from the principal surface thereof in the direction perpendicular thereto to form a vertical trench and a lateral trench is formed at the bottom portion of the side wall of the vertical trench by effecting an anisotropic etching with respect to crystallographical axes so that the etching proceeds in the direction of <110> axis, the lateral and the vertical trenches being filled with polycrystalline or amorphous semiconductor or insulator.

Abstract: A thin film of SiO.sub.2 is patterned on an N layer consisting of N-type Al.sub.x Ga.sub.1-x N (inclusive of x=0). Next, I-type Al.sub.x Ga.sub.1-x N (inclusive of x=0) is selectively grown and the portion on the N layer grows into an I-layer consisting an active layer of a light emitting diode, and that on the SiO.sub.2 thin film grows into a conductive layer. Electrodes are formed on the I-layer and conductive layer to constitute the light emitting diode. Also, on the surface a ({1120}) of a sapphire substrate, a buffer layer consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor is formed.

Abstract: A semiconductor device comprises, at least, an insulative layer; a semiconductor layer provided in contact with the insulative layer; first and second electrodes provided in contact with the semiconductor layer; and a third electrode provided through the insulative layer. The semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 .ANG. and an amorphous layer.

Abstract: According to the present invention, a polycrystalline silicon thin film with a large crystal grain size is formed on a substrate, other than single crystalline silicon, e.g. on a glass substrate with a low strain point, by plasma CVD or photo CVD, and the polycrystalline silicon thin film thus obtained has a high (100) orientation percentage and a low (220) orientation percentage, a low hydrogen content, a low fluorine content in the film, and a large crystal grain size. It has excellent flatness and is suitable for microstructure fabrication and for the manufacture of a thin film transistor. Because a thin film transistor with a large area can be produced, it is also usable for many applications such as liquid crystal display. By introducing a high concentration of dopant into the interface region between the polycrystalline silicon film and the substrate, the growth of the polycrystalline grain is enhanced because the high concentration of dopant becomes the nucleus for crystal growth.

Abstract: A thermoelectric semiconductor device having a porous structure and an air-tight sealing structure maintaining it in a deaerated state is disclosed. A refrigeration panel comprising a plurality of p-type and n-type semiconductor elements each having a structure mentioned above, in which the elements are arranged alternatively and electrically connected in series is also disclosed.