Abstract: An electronic circuit card comprises a printed circuit board with electronic components. The electronic components comprise drivers for transmitting transmit (TX) signals and receivers for receiving receive (RX) signals, according to several groups of interface signals. There is further provided a connector edge, arranged at an edge of the card, and configured to allow the card to be connected to an external connector. This connector edge comprises two subsets of symmetric pins on respective (opposite) sides thereof. The drivers and the receivers are connected to the pins, for respectively conveying the TX signals and the RX signals. Pins are assigned such that, for each of the several groups of supported interface signals, any pin (of any of the subsets) connected to transmit TX signals is located opposite a pin (of the other subset) connected to receive RX signals. Pairs of consecutive pins (on each side) typically come in differential pairs.

Abstract: A printed circuit board is disclosed having coextensive electrical connectors and contact pad areas. Areas of the contact pads where the traces and/or vias are located may be etched away to ensure electrical isolation between the traces, vias and contact pads.

Abstract: One or more techniques or systems for mitigating pattern collapse are provided herein. For example, a semiconductor structure for mitigating pattern collapse is formed. In some embodiments, the semiconductor structure includes an extreme low-k (ELK) dielectric region associated with a via or a metal line. For example, a first metal line portion and a second metal line portion are associated with a first lateral location and a second lateral location, respectively. In some embodiments, the first portion is formed based on a first stage of patterning and the second portion is formed based on a second stage of patterning. In this manner, pattern collapse associated with the semiconductor structure is mitigated, for example.

Abstract: A printed circuit board and a method of manufacturing the same. In one embodiment, a printed circuit board includes: a core made of a glass material; an insulator surrounding the core; and a via connecting internal circuit layers through the core and the insulator.

Abstract: A fan-out semiconductor package includes: a semiconductor chip having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the semiconductor chip; and a connection member disposed on the active surface of the semiconductor chip. The connection member includes a plurality of insulating layers, a plurality of redistribution layers disposed on the plurality of insulating layers, respectively, and a plurality of via layers penetrating through the plurality of insulating layers, respectively, and at least two of the plurality of insulating layers or at least two of the plurality of via layers have different thicknesses.

Abstract: A package structure including a first redistribution circuitry and a second redistribution circuitry is provided. The first redistribution circuitry has a plurality of first top conductive pads and a plurality of first bottom conductive pads. A layout density of the first bottom conductive pads is greater than a layout density of the first top conductive pads. The second redistribution circuitry is disposed on the first redistribution circuitry and electrically connected to the first redistribution circuitry. The second redistribution circuitry has a plurality of second top conductive pads and a plurality of second bottom conductive pads. A layout density of the second bottom conductive pads is greater than a layout density of the second top conductive pads. Each of the second bottom conductive pads is directly coupled to a corresponding one of the first top conductive pads. A manufacturing method of a package structure is also provided.

Abstract: A semiconductor structure includes a substrate comprising a die pad disposed over the substrate, and a passivation disposed over the substrate and surrounding the die pad, a redistribution layer (RDL) comprising a dielectric layer disposed over the passivation and an interconnect structure disposed within the dielectric layer and electrically connecting with the die pad, a conductive bump disposed over and electrically connected with the interconnect structure; and an isolation layer surrounding the substrate and the RDL.

Abstract: A laminated structure includes a polymer layer comprising at least one layer, a gas barrier layer which has thermal resistance of greater than or equal to about 650 degrees Kelvin per watt and a Young's modulus of greater than or equal to about 100 gigapascals, and a position of a neutral axis represented by the following Equation 1 is in the gas barrier layer. y = ? i = 1 n ? ? ( Ei · Si ) ? i = 1 n ? ? ( Ei · Ai ) ( Equation ? ? 1 ) In Equation 1, y denotes a distance from the top surface of a side compressed in bending to the neutral axis, Ei denotes a Young's modulus of the i-th layer, Si denotes a geometrical moment of area of the i-th layer, Ai denotes a cross-sectional area of the i-th layer, and n denotes a number of layers for the laminated structure, which is an integer of greater than or equal to 5.

Abstract: An improved leadframe assembly for use in a quad flat no lead (QFN) package is described along with a method of fabricating both the leadframe assembly and the QFN package. The leadframe assembly comprises an etch-stop layer formed on a topside of a substrate and a routing layer (or trace) formed on a topside of the etch-stop layer. The etch-stop layer prevents etching of an underside of the routing trace and the leadframe assembly may also comprise a top plating layer formed on a topside of the routing layer and which prevents etching of the topside of the routing trace.

Abstract: Semiconductor device packages, packaging methods, and packaged semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes an integrated circuit die mounting region and a molding material disposed around the integrated circuit die mounting region. An interconnect structure is disposed over the molding material and the integrated circuit die mounting region. A protection pattern is disposed in a perimeter region of the package. The protection pattern includes a conductive feature.

Abstract: A manufacturing method of a circuit substrate includes the following steps. The peripheries of two metal layers are bonded to form a sealed area. Two insulating layers are formed on the two metal layers. Two including upper and bottom conductive layers are formed on the two insulating layers. Then, the two insulating layers and the two conductive layers are laminated so that the two metal layers bonded to each other are embedded between the two insulating layers. A part of the two insulating layers and a part of the two conductive layers are removed to form a plurality of blind holes exposing the two metal layers. A conductive material is formed in the blind holes and on the remained two conductive layers. The sealed area of the two metal layers is separated to form two separated circuit substrates.

Abstract: A microelectronic package may include a substrate having first and second regions, a first surface and a second surface remote from the first surface; at least one microelectronic element overlying the first surface within the first region; electrically conductive elements at the first surface within the second region; a support structure having a third surface and a fourth surface remote from the third surface and overlying the first surface within the second region in which the third surface faces the first surface, second and third electrically conductive elements exposed respectively at the third and fourth surfaces and electrically connected to the conductive elements at the first surface in the first region; and wire bonds defining edge surfaces and having bases electrically connected through ones of the third conductive elements to respective ones of the second conductive elements and ends remote from the support structure and the bases.

Abstract: A semiconductor chip includes a substrate, an electrode pad formed on the substrate, an insulating layer covering the substrate and the electrode pad, and having an opening exposing a portion of a surface of the electrode pad, a first conductive layer formed on the exposed portion of the surface of the electrode pad and extending to a surface of the insulating layer, and a second conductive layer formed on the first conductive layer, covering the first conductive layer in a plan view, and having an outer edge portion which is located further out than an outer edge of the first conductive layer in a plan view. The outer edge portion of the second conductive layer has at least one curved portion. At least one portion of the curved portion is located between the outer edge of the first conductive layer and an outer edge of the second conductive layer in a plan view.

Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.

Abstract: Various embodiments provide for a chip package consisting of a layer over a carrier, further carrier material over the layer, wherein one or more portions of the further carrier material is removed, and a chip with one or more contact pads, where the chip is adhered to the carrier via the layer. A wafer level package consisting of a plurality of chips adhered to the carrier via a plurality of portions of the layer released from the further carrier material is also provided for.

Abstract: Semiconductor devices are described that have a metal interconnect extending vertically through a portion of the device to the back side of a semiconductor substrate. A top region of the metal interconnect is located vertically below a horizontal plane containing a metal routing layer. Method of fabricating the semiconductor device can include etching a via into a semiconductor substrate, filling the via with a metal material, forming a metal routing layer subsequent to filling the via, and removing a portion of a bottom of the semiconductor substrate to expose a bottom region of the metal filled via.

Abstract: Dies (110) with integrated circuits are attached to a wiring substrate (120), possibly an interposer, and are protected by a protective substrate (410) attached to a wiring substrate. The dies are located in cavities in the protective substrate (the dies may protrude out of the cavities). In some embodiments, each cavity surface puts pressure on the die to strengthen the mechanical attachment of the die the wiring substrate, to provide good thermal conductivity between the dies and the ambient (or a heat sink), to counteract the die warpage, and possibly reduce the vertical size. The protective substrate may or may not have its own circuitry connected to the dies or to the wiring substrate. Other features are also provided.

Abstract: Polymeric barriers for organic light emitting diodes are formed in-situ by encapsulation or polymerization. Encapsulation with melamine-cyanurate is performed using sublimation reaction technique. An encapsulation technique involves curing a layer of resin made by mixing a polyaza aryl compound, such as melamine, melam, or melem, with a cyanuryl triglycidyl ether. Another encapsulation technique involves curing a layer of resin made by mixing the polyaza aryl aromatic compound in 2,4,6-tricyanatophenyl glycidyl ether or tetracyanatobenzene applied to an organic light emitting diode. Photo catalytic curing of the coating may be achieved in the presence of catalysts such as titanium IV oxide acetylacetonate.

Abstract: A method of fabricating a package includes providing a mold substrate supporting dies in cavities of a fan-out substrate, detecting positions of the dies with respect to the fan-out substrate, and forming interconnection lines. At least one of the interconnection lines includes a first portion extending from the fan-out substrate to a target position on the cavity disposed between the fan-out substrate and one of the dies the one of the dies disposed at a detected position different from the target position, and a second portion extending from the one die to the fan-out substrate.

Abstract: A semiconductor package for mounting to a printed circuit board (PCB) includes a case comprising a ceramic base, a semiconductor die in the case, a mounting pad under the ceramic base and coupled to the semiconductor die through at least one opening in the ceramic base. The mounting pad includes at least one layer having a coefficient of thermal expansion (CTE) approximately matching a CTE of the ceramic base. The mounting pad includes at least one layer having a low-yield strength of equal to or less than 200 MPa. The mounting pad includes at least one copper layer and at least one molybdenum layer. The semiconductor package also includes a bond pad coupled to another mounting pad under the ceramic base through a conductive slug in the ceramic base.

Abstract: A sintered body comprises a first region which comprises a first material having a first effective coefficient of thermal expansion ?1, a second region which comprises a second material having a second effective coefficient of thermal expansion ?2, a transition region between the first region and the second region in which the effective coefficient of thermal expansion changes from the first effective coefficient of thermal expansion to the second effective coefficient of thermal expansion. The transition region has a sequence of layers with a mixture of at least the first material and the second material, with the mixing ratio of the layers varying in order to achieve a stepwise, in particular monotonic, change in the coefficient of thermal expansion.

Abstract: A package includes an interposer, which includes a core dielectric material, a through-opening extending from a top surface to a bottom surface of the core dielectric material, a conductive pipe penetrating through the core dielectric material, and a device die in the through-opening. The device die includes electrical connectors. A top package is disposed over the interposer. A first solder region bonds the top package to the conductive pipe, wherein the first solder region extends into a region encircled by the conductive pipe. A package substrate is underlying the interposer. A second solder region bonds the package substrate to the interposer.

Abstract: An integrated circuit package with improved reliability and methods for creating the same are disclosed. More specifically, integrated circuit packages are created using one or more sacrificial layers that provide support for ink printed wires prior to package processing, but are removed during package processing. Once each of the sacrificial layers is removed, molding compound is placed around each ink printed wire, which may have a substantially rectangular cross section that can vary in dimension along a length of a given wire. While substantially surrounding each wire in and of itself improves reliability, removing non-conductive paste, fillets, or other adhesive materials also minimizes adhesion issues between the molding compound and those materials, which increases the bond of the molding compound to the package and its components. The net result is a more reliable integrated circuit package that is less susceptible to internal cracking and wire damage.

Abstract: A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction.

Abstract: An integrated circuit package that includes an integrated circuit die, a redistribution substrate, a wirebond interconnect and a package substrate is disclosed. The redistribution substrate is formed on the integrated circuit die and may be wider than the integrated circuit die. The package substrate is formed below the integrated circuit die. The wirebond interconnect may have one of its ends attached to the redistribution substrate and another end attached to the package substrate. In addition to that, another integrated circuit die may be formed between the redistribution substrate and the package substrate. The integrated circuit dies may communicate with each other through the redistribution substrate. In addition to that, a method to manufacture the integrated circuit package may also be disclosed.

Abstract: An integrated fan out (InFO) antenna includes a reflector on a surface of a substrate; and a package. The package includes a redistribution layer (RDL) arranged to form an antenna ground, and a patch antenna over the RDL, wherein the RDL is between the patch antenna and the reflector. The InFO antenna further includes a plurality of connecting elements bonding the package to the reflector. Each connecting element of the plurality of connecting elements is located inside an outer perimeter of the reflector. The InFO antenna is configured to output a signal having a wavelength.

Abstract: A method for manufacturing a power module substrate includes a first lamination step of laminating a ceramic substrate and a copper sheet through an active metal material and a filler metal having a melting point of 660° C. or lower on one surface side of the ceramic substrate; a second lamination step of laminating the ceramic substrate and an aluminum sheet through a bonding material on the other surface side of the ceramic substrate; and a heating treatment step of heating the ceramic substrate, the copper sheet, and the aluminum sheet laminated together, and the ceramic substrate and the copper sheet, and the ceramic sheet and the aluminum sheet are bonded at the same time.

Abstract: A method includes adhering a voltage regulator die over a carrier through a die-attach film, with the die-attach film being in the voltage regulator die and encircles metal pillars of the voltage regulator die, encapsulating the voltage regulator die in an encapsulating material, and planarizing the encapsulating material. A back portion of the voltage regulator die is removed to expose a through-via in a semiconductor substrate of the voltage regulator die. The method further includes forming first redistribution lines over the encapsulating material and electrically coupled to the through-via, replacing the die-attach film with a dielectric material, forming second redistribution lines on an opposite side of encapsulating material than the first redistribution lines, and bonding an additional device die to the second redistribution lines. The voltage regulator die is electrically coupled to the additional device die.

Abstract: A wiring substrate includes an insulating layer, a first wiring layer and a second wiring layer on opposite sides of the insulating layer, and a via piercing through the first wiring layer and the insulating layer to electrically connect to the second wiring layer. The via includes an end portion projecting from a first surface of the first wiring layer facing away from the insulating layer. A surface of the end portion facing in the same direction as the first surface of the first wiring layer is depressed to be deeper in the center than in the periphery.

Abstract: An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.

Abstract: A method of manufacturing a semiconductor device may include forming an insulating layers on a substrate, forming a plurality of holes in an upper portion of the insulating layer, forming a mask layer having openings exposing at least a first set of the plurality of holes, etching a lower portion of the insulating layer exposed by one of the plurality of holes which is exposed by the mask layer to form a through hole in the insulating layer in combination with the one of the plurality of holes, and forming a conductive structure in the through hole.

Abstract: Embodiments of the present description relate to the field of fabricating microelectronic substrates. The microelectronic substrate may include a trace routing structure disposed between opposing glass layers. The trace routing structure may comprise one or more dielectric layers having conductive traces formed thereon and therethrough. Also disclosed are embodiments of a microelectronic package including a microelectronic device disposed proximate one glass layer of the microelectronic substrate and coupled with the microelectronic substrate by a plurality of interconnects.

Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including bonding a die to a top surface of a first substrate, the die being electrically coupled to the first substrate, and forming a support structure on the top surface of the first substrate, the support structure being physically separated from the die with a top surface of the support structure being coplanar with a top surface of the die. The method further includes performing a sawing process on the first substrate, the sawing process sawing through the support structure.

Abstract: Semiconductor device assemblies with semiconductor device packages configured to operate in mirror mode are disclosed herein. In one embodiment a semiconductor device assembly includes a first semiconductor device package attached to a front side of a support substrate, and a second semiconductor device package attached to a back side of the support substrate. The first device package includes a plurality of first package contacts having a first arrangement of corresponding pin assignments, and the second device package includes a plurality of second package contacts and a switch circuit operably coupled to the second package contacts. The switch circuit is configured to receive a switch signal via the support substrate, and to assign the second package contacts to either the first arrangement of corresponding pin assignments or a second arrangement of corresponding pin assignments based on the switch signal.

Abstract: An electronic device may include a mechanical structure that mechanically supports the electronic device. One or more traces may be formed on one or more surfaces of the mechanical structure. Other electrical components may also be mounted on the surface of the mechanical structure and may or may not be connected to one or more of the traces. Additionally, one or more passivation layers may be formed on one or more of the surfaces, traces, and/or other electrical components and one or more traces and/or other electrical components may be intermixed with such passivation layers. In this way, the mechanical structure may be operable to function as an electrical component of the electronic device.

Abstract: Provided is a circuit substrate for a semiconductor package used for mounting a plurality of semiconductor devices. The circuit substrate including: a first circuit substrate unit; and a second circuit substrate unit that is formed on the first circuit substrate unit, wherein Young's modulus of a first dielectric material composing the dielectric layer of the first circuit substrate unit is higher than Young's modulus of a second dielectric material composing the dielectric layer of the second circuit substrate unit, and a coefficient of thermal expansion of the first dielectric material composing the dielectric layer of the first circuit substrate unit is smaller than a coefficient of thermal expansion of the second dielectric material composing the dielectric layer of the second circuit substrate unit.

Abstract: A circuit board including a substrate, a photo imageable dielectric layer and a plurality of conductive bumps is provided. The substrate has a first surface and a first circuit layer, wherein the first surface has a chip disposing area and an electrical connection area, and the first circuit layer is embedded in the first surface. The photo imageable dielectric layer is disposed on the electrical connection area and has a plurality of openings, wherein parts of the first circuit layer is exposed by the openings. The conductive bumps are disposed at the openings respectively and connected to the first circuit layer, wherein a side surface of each of the conductive bumps is at least partially covered by the photo imageable dielectric layer. In addition, a manufacturing method of the circuit board is also provided.

Abstract: Various methods and devices that involve snubber circuits for switching power converters are disclosed. An example power converter has a snubbing circuit. The snubber circuit comprises a bypass capacitor connecting an input node of the power converter to a ground node of the power converter, a decoupling capacitor that connects the input node of the power converter to a snubber node, and a snubbing resistor that connects the snubber node to the ground node. The snubbing resistor connects the decoupling capacitor to the ground node of the power converter. The snubbing resistor is greater than 1 ohm. The decoupling capacitor is greater than 5 nanofarads and less than 0.5 microfarads. The bypass capacitor is greater than 1 microfarads.

Abstract: A semiconductor device that includes a redistribution layer (RDL) is disclosed. A chip is mounted on the RDL within a chip mounting area. The RDL is electrically connected to the chip. A molding compound covers and encapsulates the chip. A first stress-relief feature is embedded in the molding compound within a peripheral area adjacent to the chip mounting area. A second stress-relief feature is embedded in the molding compound within the chip mounting area. The first stress-relief feature is composed of a first material. The second stress-relief feature is composed of a second material that is different from the first material.

Abstract: A package for housing an electronic component, which is provided with: a substrate part that comprises an insulating substrate, which is formed of a ceramic sintered body and comprises a recess portion, and a wiring conductor which is provided on the insulating substrate; and a metal portion which is formed of a sintered body of a getter metal material and is directly bonded to the recess portion.

Abstract: Disclosed is a semiconductor light emitting device, including: a plurality of semiconductor layers grown sequentially on a growth substrate; a first electrode part, which is in electrical communication with the first semiconductor layer and supplies one of electrons or holes thereto; a second electrode part, which is in electrical communication with the second semiconductor layer and supplies the other one of electrons or holes thereto; and a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein, wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening; an upper electrode provided on the non-conductive reflective film; and an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrod

Abstract: A semiconductor package is provided, including: an insulating base body having a first surface with an opening and a second surface opposite to the first surface; an insulating extending body extending outward from an edge of the first surface of the insulating base body, wherein the insulating extending body is less in thickness than the insulating base body; an electronic element having opposite active and inactive surfaces and disposed in the opening with its inactive surface facing the insulating base body; a dielectric layer formed in the opening of the insulating base body and on the first surface of the insulating base body, the insulating extending body and the active surface of the electronic element; and a circuit layer formed on the dielectric layer and electrically connected to the electronic element. The configuration of the insulating layer of the invention facilitates to enhance the overall structural rigidity of the package.

Abstract: An electronic circuit unit includes a circuit substrate having a rectangular shape and is obtained by cutting an integral substrate along a vertical cut line and a horizontal cut line to be separated; a copper foil land soldered to components; and a substrate outer edge, which is formed by cutting, of two sides orthogonal to each other. The copper foil land and the substrate outer edge are positioned in the vicinity of a corner of the circuit substrate. Solder resist is provided around the copper foil land. A plurality of substrate exposure portions without the solder resist is provided in the vicinity of the substrate outer edge.

Abstract: A method of making an integrated circuit package includes: (a) forcing a circuit layered structure that includes a metal substrate and a circuit pattern, the metal substrate having opposite first and second surfaces, the circuit pattern including at least two spaced apart die contacts that protrude from the first surface of the metal substrate, the metal substrate directly interconnecting the die contacts; (b) bonding first and second terminal contacts of an electronic die to the die contacts, respectively; and (c) forming an insulator layer on the first surface of the metal substrate to encapsulate the die and the die contacts after step (b).

Abstract: A direct current to direct current (DC-DC) converter can include a chip embedded integrated circuit (IC), one or more switches, and an inductor. The IC can be embedded in a PCB. The IC can include driver, switches, and PWM controller. The IC and/or switches can include eGaN. The inductor can be stacked above the IC and/or switches, reducing an overall footprint. One or more capacitors can also be stacked above the IC and/or switches. Vias can couple the inductor and/or capacitors to the IC (e.g., to the switches). The DC-DC converter can offer better transient performance, have lower ripples, or use fewer capacitors. Parasitic effects that prevent efficient, higher switching speeds are reduced. The inductor size and overall footprint can be reduced. Multiple inductor arrangements can improve performance. Various feedback systems can be used, such as a ripple generator in a constant on or off time modulation circuit.

Abstract: In a semiconductor device, an element forming region formed with a semiconductor element for controlling a current is defined on a surface of a semiconductor substrate. A termination region is defined so as to surround the element forming region. In a gate electrode, a probe-contacting region and a wire region are defined. The probe-contacting region and the wire region are separated by an insulator formed on a surface of the gate electrode. Thus, the surface of the probe-contacting region and the surface of the wire region are located at the same height.

Abstract: The stack package includes a substrate body layer having a top surface and a bottom surface, first circuit patterns disposed on the bottom surface of the substrate body layer, second circuit patterns disposed on the top surface of the substrate body layer, a first semiconductor chip including first bumps, and a second semiconductor chip including second bumps. The first bumps extend through the substrate body layer to be electrically coupled to the first circuit patterns, and the second bumps extend past sidewalls of the first semiconductor chip to be electrically coupled to the second circuit patterns. The second semiconductor chip is stacked on the first semiconductor chip.

Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

Abstract: A wiring board includes a substrate having first and second opposite surfaces, a first adhesive layer on the first surface of the substrate, a thermal diffusion metal pattern on the first adhesive layer, multiple vias vertically extending from the thermal diffusion metal pattern into the substrate through the first adhesive layer with a gap around each of the vias in the substrate and the first adhesive layer, and a second adhesive layer on the second surface of the substrate. The thermal diffusion metal pattern is not to be electrically connected to a semiconductor device to be mounted. The second adhesive layer fills in the gap around each of the vias within the substrate and the first adhesive layer. The gap includes a first gap and a second gap in the substrate and the first adhesive layer, respectively. The second gap is greater in lateral size than the first gap.

Abstract: A semiconductor package includes a substrate including a core layer having a first surface and a second surface which is opposite to the first surface, a wiring layer formed over the first and second surfaces and in an inside of the core layer, and having a first electrode disposed in the inside of the core layer and exposed from the core layer and a second electrode disposed over the first surface, and a passivation layer formed over the first and second surface of the core layer such that the first and the second electrodes are exposed; a first semiconductor chip disposed over the first surface of the core layer; a second semiconductor chip stacked over the first semiconductor chip; a first connection member for connecting the first semiconductor chip with the first electrode; and a second connection member for connecting the second semiconductor chip with the second electrode.