Abstract: A method includes attaching a first anisotropic conductive film including first conductive particles to a front surface of a substrate structure; compressing a first redistribution structure on the front surface of the substrate structure such that a first redistribution conductor of the first redistribution structure that is exposed is electrically connected by the first conductive particles to a connection terminal or a vertical connection conductor that is exposed from the substrate structure, attaching a second anisotropic conductive film including second conductive particles to a rear surface of the substrate structure; and compressing a second redistribution structure on the rear surface of the substrate structure such that a second redistribution conductor of the second redistribution structure that is exposed is electrically connected by the second conductive particles to the vertical connection conductor.

Abstract: Electronic assemblies may be fabricated with interconnects of different types present in multiple locations and comprising fused copper nanoparticles. Each interconnect or a portion thereof comprises a bulk copper matrix formed from fusion of copper nanoparticles or a reaction product formed from copper nanoparticles. The interconnects may comprise a copper-based wire bonding assembly, a copper-based flip chip connection, a copper-based hermetic seal assembly, a copper-based connector between an IC substrate and a package substrate, a copper-based component interconnect, a copper-based interconnect comprising via copper for establishing electrical communication between opposite faces of a package substrate, a copper-based interconnect defining a heat channel formed from via copper, and any combination thereof.

Abstract: An electronic device includes an arithmetic unit layer and a power supply. The arithmetic unit layer comprises at least one arithmetic unit. Each arithmetic unit comprises a first housing in a shape of cuboid. A first side direction of the first housing extends in a first direction. The first housing is provided with first and second openings at both ends in the first side direction thereof to form a coolant passage extending in the first direction. The power supply is stacked with arithmetic unit layer in a second or a third direction. A first side direction of the power supply is aligned with the first side direction of each arithmetic unit. The power supply is provided with third and fourth openings at both ends in the first side direction thereof to form a coolant passage extending in the first side direction of the power supply.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: An electronic module includes a semiconductor package, and a clip connected to the semiconductor package. The clip is connected to or includes at least one fastening element which is configured to make a connection to an external heat sink.

Abstract: A liquid-submersible thermal management system includes a cylindrical outer shell and an inner shell positioned in an interior volume of the outer shell. The cylindrical outer shell has a longitudinal axis oriented vertically relative to a direction of gravity, and the inner shell defines an immersion chamber. The liquid-submersible thermal management system a spine positioned inside the immersion chamber and oriented at least partially in a direction of the longitudinal axis with a heat-generating component located in the immersion chamber. A working fluid is positioned in the immersion chamber and at least partially surrounding the heat-generating component. The working fluid receives heat from the heat-generating component.

Abstract: A heat sink is a multilayer cooler for cooling a contacting heat-generating element by flowing a coolant from a fluid inlet to a fluid outlet, and includes a heat-receiving plate, a channel plate, an orifice plate, a header plate, and a bottom plate stacked in this order from the top surface and bonded by diffusion bonding. The channel plate has many cooling micropaths arranged in a matrix. The orifice plate has jet orifices for jetting a coolant into the cooling micropaths and drain orifices for draining the coolant from the cooling micropaths. The header plate includes a baffle that separates the fluid inlet from the fluid outlet. The baffle includes a plurality of parallel plates and first end plates and second end plates that alternately close openings at an end and at the opposite end of the parallel plate. The baffle and the peripheral wall define a supply channel.

Abstract: Stacked semiconductor die assemblies with heat sinks and associated methods and systems are disclosed. In some embodiments, a controller carrying one or more memory dies may be attached to a front side of a substrate. The substrate may include a heat sink formed on its back side such that the heat sink can establish a thermal contact with the controller. Further, the heat sink may be coupled to a thermally conductive pad of a printed circuit board (PCB) that carries the substrate. In this manner, the controller may be provided with a heat path toward the PCB to dissipate thermal energy generated during operation. In some cases, the substrate may include a set of thermal vias extending from the heat sink toward the controller to enhance the thermal contact between the controller and the heat sink.

Abstract: A semiconductor device has a substrate and plurality of first bumps formed over the substrate in an array. An array of second bumps is formed over the substrate on at least two sides of the first bumps. An electrical component is disposed over the first bumps. A package structure is disposed over the substrate and electrical component. The package structure has a horizontal member and legs extending from the horizontal member to form a cavity. The package structure is coupled to the array of second bumps. The package structure includes a material to operate as a heat sink or shielding layer. The shielding layer makes ground connection through the array of second bumps. The first bumps and second bumps have a similar height and width to form in the same manufacturing step. A protective layer, such as conductive epoxy, is disposed over the array of second bumps.

Abstract: In one example, a semiconductor device includes a first substrate with a first substrate top side, a first substrate bottom side opposite to the first substrate top side, a first substrate lateral side interposed between the first substrate top side and the first substrate bottom side, and a first substrate conductive structure. An electronic component is coupled to the first substrate top side and coupled to the first substrate conductive structure. A support includes a support wall having a first ledge coupled to the first substrate top side, a first riser coupled to the first substrate lateral side, and a second ledge extending from the first riser away from the first substrate lateral side. Other examples and related methods are also disclosed herein.

Abstract: A vertical non-volatile memory device capable of stably maintaining an operating temperature in a chip level, a semiconductor package including the memory device, and a heat dissipation method of the memory device. The vertical non-volatile memory device includes a substrate on which a cell array area and an extension area are defined, a vertical channel structure formed on the substrate, a thermoelectric device including at least two semiconductor pillars formed on the substrate, and a stacked structure on the substrate. The stacked structure includes a gate electrode layer and an interlayer insulation layer which are stacked alternately along sidewalls of the vertical channel structure and the at least two semiconductor pillars. The at least two semiconductor pillars include an n-type semiconductor pillar and a p-type semiconductor pillar which are electrically connected to each other through a conductive layer on the substrate.

Abstract: A pattern of microchannels is formed on a major surface of a substrate on the side opposite an adhesive surface thereof. Through holes extend through the substrate and are connected to the pattern of microchannels. Solid circuit dies are adhesively bonded to the adhesive surface of the substrate. The contact pads of the solid circuit dies at least partially overlie and face the through holes. Electrically conductive channel traces are formed to electrically connect to the solid circuit dies via the through holes.

Abstract: The semiconductor device includes a supporting member, a conductive member, and a semiconductor element. The supporting member has a supporting surface facing in a thickness direction. The conductive member has an obverse surface facing the same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface. The conductive member is bonded to the supporting member such that the reverse surface faces the supporting surface. The semiconductor element is bonded to the obverse surface. The semiconductor device further includes a first metal layer and a second metal layer. The first metal layer covers at least a part of the supporting surface. The second metal layer covers the reverse surface. The first metal layer and the second layer are bonded to each other by solid phase diffusion.

Abstract: A semiconductor apparatus includes a substrate, a plurality of heat generating elements mounted on the substrate, a heat dissipation member fixed to the substrate and disposed such that the heat generating elements are interposed between the heat dissipation member and the substrate, at least one first heat conduction member provided on a first surface of the heat dissipation member, the first surface facing the heat generating elements, and a plurality of second heat conduction members each provided on a second surface of a corresponding one of the heat generating elements, the second surface facing the heat dissipation member, wherein the at least one first heat conduction member and the second heat conduction members are in contact with each other at an interface between opposing surfaces thereof.

Abstract: A semiconductor package comprises a substrate and a ceramic carrier mounted to the substrate. An integrated circuit (IC) die is mounted to the ceramic carrier. A heat extraction path away from the IC die comprises: i) a thermal interface material over the IC die, the thermal interface material having a thickness of approximately 25 to 80 um; ii) an integrated heat spreader over the thermal interface material; iii) a ceramic carrier plate over the integrated heat spreader; and iv) an electrically conductive thermal pad between the ceramic carrier plate and a housing of the semiconductor package.

Abstract: A structure includes a circuit substrate, a device, a metal layer, a lid and a thermal interface material layer. The device is disposed on and electrically connected to the circuit substrate. The device includes at least one semiconductor die laterally encapsulated by an insulating encapsulation. The metal layer is covering a back surface of the at least one semiconductor die and the insulating encapsulation. The lid is disposed on the circuit substrate, and the lid is adhered to the metal layer through the thermal interface material layer.

Abstract: According to one embodiment, an apparatus is provided that includes a first block and a second block, one or more springs provided between the first block and the second block, and a thermally conductive wrap extending from the first block to the second block, wherein the thermally conductive wrap is configured to conduct heat away from the first block. An assembly including a chassis, a receptacle, and the apparatus is also provided, as well as a method for operating the apparatus.

Abstract: A thermal islanding heatsink (a monolithic heat sink that includes a thermal insulating barrier is provided within a memory sub-system. The memory sub-system can be a solid state drive that can include a memory device, such as a volatile memory device and/or a non-volatile memory device, a power regulation area, and/or a controller. The thermal insulating barrier is deployed between the memory device and the power regulation area or between the memory device and the controller.

Abstract: A package carrier includes a circuit structure layer and a heat-conducting element. The circuit structure layer includes a notch portion. The heat-conducting element includes a first heat-conducting portion and a second heat-conducting portion vertically connected to the first heat-conducting portion. The notch portion exposes the first heat-conducting portion, and an outer surface of the second heat-conduction portion is aligned with a side surface of the circuit structure layer.

Abstract: An interposer includes a base layer including a first surface and a second surface that are opposite to each other. An interconnect structure is disposed on the first surface. The interconnect structure includes a metal interconnect pattern and an insulating layer surrounding the metal interconnect pattern. A first lower protection layer is disposed on the second surface. A plurality of lower conductive pads is disposed on the first lower protection layer. A plurality of through electrodes penetrates the base layer and the first lower protection layer. The plurality of through electrodes electrically connects the metal interconnect pattern of the interconnect structure to the lower conductive pads. At least one of the insulating layer and the first lower protection layer has compressive stress. A thickness of the first lower protection layer is in a range of about 13% to about 30% of a thickness of the insulating layer.

Abstract: Techniques for dynamically changing a pressure within a pressurized cooling system to thereby allow different cooling rates to be used to cool electronic equipment are disclosed. A pressurized cooling system cools electronic heat generating components using dielectric heat transfer fluid disposed within a two-phase immersion cooling container. This container is operable to maintain different pressure levels. The pressurized cooling system includes a pressure system structured to modify a pressure within the container. The system operates in a first state when the pressure is above a threshold pressure. The system operates in a second state when the pressure is at the threshold pressure. The system operates in either one of the first state or the second state based on an operating state of the heat generating component.

Abstract: A contiguous integrated heat spreader suitable for an integrated circuit (IC) die package. Heat spreader material may be deposited with a high throughput additive manufacturing (HTAM) technique directly upon a surface of an IC die, and over a portion of a package substrate beyond an edge of the IC die. The contiguous heat spreader may have high thermal conductivity and offer low thermal resistance in absence of any intervening thermal interface material (TIM). The contiguous heat spreader may span multiple IC die and accommodate different die heights. The heat spreader may be contiguous with multiple die. Heat spreader material may be absent where thermal breaks within the heat spreader are advantageous.

Abstract: A cooling device for cooling a chip, a server with such a cooling device, and a rack are disclosed. The cooling device comprises a cooling layer that is divided into multiple cooling regions; and an internal region that includes a vapor separation core. Two-phase coolant that enters a first cooling region of the cooling layer is converted to mixed fluid due to heat extracted from a corresponding region of the chip. The mixed fluid is elevated to the vapor separate core, which separates vapor from liquid in the mixed fluid. The vapor exits the cooling device while the liquid is transported to a second cooling region in the cooling layer. The cooling device can be used with a condenser in a server to form an internal server loop, and can be connected to a rack to form a main fluid loop. The two coolant recirculation loops are used together to maintain a predetermined liquid balance in the cooling device.

Abstract: A power module for operating an electric vehicle drive, comprising: numerous semiconductor components; a heatsink for discharging heat generated by the semiconductor components; a DC link capacitor connected in parallel to the semiconductor components; a DC link line electrically connecting the DC link capacitor to the semiconductor components; wherein the DC link line is at least partially located in a hole formed in the heatsink.

Abstract: Described are systems for electronic heatsink safety including a system comprising a thermoelectric generator integrated into a heatsink, where the thermoelectric generator includes a first portion exposed to ambient temperature and a second portion contacting the heatsink, and where the thermoelectric generator is configured to produce a current based on a temperature difference between the first portion and the second portion. The system further comprises a first Light Emitting Diode (LED) electrically connected to the thermoelectric generator, where the current is configured to activate the first LED.

Abstract: A semiconductor device includes a semiconductor package, including a package body that includes an encapsulant portion and an isolation structure, a semiconductor die embedded within the package body, and a plurality of leads that protrude out from the encapsulant body, wherein the encapsulant portion and the isolation structure are each electrically insulating structures, wherein the isolation structure has a greater thermal conductivity than the encapsulant portion, and wherein the isolation structure is thermally coupled to the semiconductor die, and a releasable layer affixed to the semiconductor package, wherein a first outer face of the package body includes a first surface of the isolation structure, wherein the releasable layer at least partially covers the first surface of the isolation structure, and wherein the releasable layer is releasable from the semiconductor package.

Abstract: Thermally conductive shock absorbers for electronic devices are disclosed. An electronic device includes a housing and a hardware component positioned inside the housing. A thermally conductive shock absorber is located between an inner surface of the housing and the hardware component. The thermally conductive shock absorber including an impact absorbing material and a thermal conductive material being in contact with at least a portion of the impact absorbing material.

Abstract: A semiconductor package includes a redistribution substrate, and a semiconductor chip disposed on a top surface of the redistribution substrate. The redistribution substrate includes under bump patterns laterally spaced apart from each other, a dummy pattern disposed between the under bump patterns, a passivation pattern disposed on a bottom surface of the dummy pattern, an insulating layer covering top surfaces and sidewalls of the under bump patterns and a sidewall and a top surface of the dummy pattern, and a redistribution pattern disposed on one of the under bump patterns and electrically connected to the one under bump pattern. The passivation pattern includes a different material from that of the insulating layer.

Abstract: A package structure includes a semiconductor package, a thermal conductive gel, a thermal conductive film and a heat spreader. The thermal conductive gel is disposed over the semiconductor package. The thermal conductive film is disposed over the semiconductor package and the thermal conductive gel. A thermal conductivity of the thermal conductive film is different from a thermal conductivity of the thermal conductive gel. The thermal conductive film is surrounded by the heat spreader.

Abstract: Disclosed are aspects of apparatuses and methods of fitting a cooling device to a circuit board for cooling a high-power electronic component mounted on the circuit board. Cooling apparatuses, and arrangement thereof, are also described. The method provides the cooling device with a cooling surface having a cooling area for thermally connecting to a to-be-cooled surface of the electronic component. Fixing elements are provided for moving the cooling surface towards the circuit board. A distance position “d” of the to-be-cooled surface from the circuit board is determined, and on this basis spacer elements are selected to be interposed between the cooling device and the circuit board to limit the movement by the fixing elements to a position where the cooling area is in proximity to the to-be-cooled surface.

Abstract: The invention discloses a method and modified aerodynamic apparatuses: fluid pushers-off and fluid motion-sensors, making enable efficient implementation and use of a controllable enhanced jet-effect, either the waving jet-effect, the Coanda jet-effect, the lift-effect, the effect of thrust, the Venturi effect, and/or the de Laval jet-effect, all are controllable using the Peltier effect and/or the Seebeck effect. The modified aerodynamic apparatuses are geometrically shaped and supplied with built-in thermoelectric devices, wherein the presence of the thermoelectric devices provides for new functional properties of the modified aerodynamic apparatuses. The method solves the problem of effective control of the operation of modified aerodynamic apparatuses such as airfoil wings of a flying vehicle, convergent-divergent nozzles, loudspeakers, and detectors of acoustic waves, all of a highly-efficient functionality.

Abstract: A semiconductor package structure includes a substrate, a first semiconductor and a second semiconductor over the substrate, and a multi-TIM structure disposed over the first semiconductor die and the second semiconductor die. The first semiconductor die includes a first heat output and the second semiconductor die includes a second heat output less than the first heat output. The multi-TIM structure includes a first TIM layer disposed over at least a portion of the first semiconductor die and a second TIM layer. A thermal conductivity of the first TIM layer is higher than a thermal conductivity of the second TIM layer. The first TIM layer covers the first semiconductor die.

Abstract: A system for cooling a power component includes a first metal layer. A cooling layer having a first surface is in contact with a surface of the first metal layer. A second metal layer is included having a surface in contact with a second surface of the cooling layer opposite the first metal layer. The cooling layer is of a material different from that of the first metal layer and that of the second metal layer. A plurality of cooling features are embedded in the material of the cooling layer. The cooling channels are spaced apart from both the first metal layer and the second metal layer by the material of the cooling layer. An electrically conductive path connects the first metal plate to the second metal plate.

Abstract: A semiconductor device includes an insulating substrate, wiring layers, heat dissipation layers, a semiconductor element, and a sealing resin. The wiring layers each have a first obverse face and a first reverse face oriented in opposite directions in a thickness direction of the substrate. The first reverse faces of the wiring layers are connected to the substrate. The heat dissipation layers each have a second obverse face oriented in the same direction as the first obverse face, and a second reverse face oriented opposite to the second obverse face in the thickness direction. The heat dissipation layers are located opposite to the plurality of wiring layers in the thickness direction with respect to the substrate. The second obverse faces of the heat dissipation layers are connected to the substrate. The semiconductor element is connected to one of the first obverse faces of the wiring layers. The sealing resin covers the substrate, the wiring layers, and the semiconductor element.

Abstract: A semiconductor memory device with improved reliability and a related method are provided. The semiconductor memory device includes a mold structure including a plurality of gate electrodes and a plurality of mold insulating films on a first substrate, a channel structure penetrating the mold structure and crossing a respective level of each of the gate electrodes, a plurality of first insulating patterns in the mold structure, the first insulating patterns including a material different from that of the mold insulating films, and a first through via in the first insulating patterns, the first through via penetrating the first substrate and the mold structure. The gate electrodes include a first word line and a second word line on the first word line. A first distance from the first word line to the first through via is different from a second distance from the second word line to the first through via.

Abstract: A heat sink for use in an immersion cooling system that includes a sintered powder structure enclosed in a porous enclosure. The porous enclosure has openings, e.g., formed by a mesh, with a size to help contain sintered powder particles that may be dislodged during operation of the heat sink.

Abstract: In a general aspect, a packaged semiconductor device apparatus a conductive paddle, a semiconductor die coupled with the conductive paddle and a conductive clip having a first portion with a first thickness and a second portion with a second thickness. The first thickness can be greater than the second thickness. The first portion can be coupled with the semiconductor die. The device can also include a molding compound encapsulating the semiconductor die and at least partially encapsulating the conductive paddle and the conductive clip. The device can further include a signal lead that is at least partially encapsulated in the molding compound, the second portion of the conductive clip being coupled with the signal lead.

Abstract: A power electronics module includes a heat sink structurally configured to dissipate thermal energy, an electrically-insulating layer directly contacting the heat sink, a conductive substrate positioned on and in direct contact with the electrically-insulating layer, a power electronics device positioned on and in direct contact with the conductive substrate, a printed circuit board layer that at least partially encapsulates the conductive substrate and the power electronics device, and a driver circuit component positioned on a surface of the printed circuit board layer.

Abstract: The present disclosure describes heat dissipation structures formed in functional or non-functional areas of a three-dimensional chip structure. These heat dissipation structures are configured to route the heat generated within the three-dimensional chip structure to designated areas on or outside the three-dimensional chip structure. For example, the three-dimensional chip structure can include a plurality of chips vertically stacked on a substrate, a first passivation layer interposed between a first chip and a second chip of the plurality of chips, and a heat dissipation layer embedded in the first passivation layer and configured to allow conductive structures to pass through.

Abstract: An array of heat-sinked power semiconductors that includes a power semiconductor and a heat sink. The power semiconductor has a power semiconductor die, a plurality of first terminals and a second terminal. The power semiconductor die has a plurality of semiconductor terminals. Each of the first terminals is electrically coupled to an associated one of the semiconductor terminals. The second terminal is a surface mount terminal and is electrically coupled to one of the first terminals. The heat sink has a heat sink body and a plurality of fins. The heat sink body has a base and an exterior surface. The base is fixedly coupled directly to the surface mount terminal. The exterior surface has a fin mount portion to which the fins extend. At least a portion of the fin-mount portion is oriented non-parallel to base.

Abstract: A first electronic device may comprise a chassis and first fins. The chassis may be configured to removably couple with a second electronic device. The first fins are configured to interleave with second fins of the second electronic device in a coupled state of the first and second electronic devices. A corrugated thermal interface device comprises folded fins. The folded fins are coupled to the first fins and are also removably couplable to the second fins in the coupled state of the first and second electronic devices. Each folded fin comprises one or more lateral walls, and the corrugated thermal interface device further comprises a plurality of spring fingers coupled to and extending at least partially in a lateral direction from the lateral walls. The spring finger contacts may be contacted and displaced by the second fins in the coupled state of the first and second electronic devices.

Abstract: A chip package structure is provided. The chip package structure includes a wiring substrate. The chip package structure includes a first chip structure over the wiring substrate. The chip package structure includes a heat-spreading lid over the wiring substrate and covering the first chip structure. The heat-spreading lid includes a ring structure and a top plate. The ring structure surrounds the first chip structure. The top plate covers the ring structure and the first chip structure. The first chip structure has a first sidewall and a second sidewall opposite to the first sidewall, a first distance between the first sidewall and the ring structure is less than a second distance between the second sidewall and the ring structure, the top plate has a first opening, the first opening has a first inner wall and a second inner wall facing each other.

Abstract: An electronics module (100), especially a power electronics module, comprising a metal-ceramic substrate (1) serving as a carrier and having a ceramic element (10) and a primary component metallization (21), an insulation layer (40) directly or indirectly connected to the primary component metallization (21), and a secondary component metallization (22) which is connected to the side of the insulation layer (40) facing away from the metal-ceramic substrate (1) and is especially isolated from the primary component metallization (21) using the insulation layer (40), wherein the ceramic element (10) has a first size (L1, D1) and the insulation layer (40) has a second size (L2, D2) and a ratio of the second size (L2, D2) to the first size (L1, D1) has a value smaller than 0.8, to form an island-like insulation layer (40) on the primary component metallization (21).

Abstract: A semiconductor product in the form of a stack chip package and a method of manufacturing the same, where a plurality of semiconductor chips are stacked one on another so as to enable the exchange of electrical signals between the semiconductor chips, and where a conductive layer is included for inputting and outputting signals to and from individual chips. A stack chip package having a compact size may, for example, be manufactured by stacking, on a first semiconductor chip, a second semiconductor chip having a smaller surface area by means of interconnection structures so as to enable the exchange of electrical signals between the first and second semiconductor chips, and by using a conductive layer for inputting and outputting signals to and from individual semiconductor chips, in lieu of a thick substrate. Furthermore, heat dissipation effects can be enhanced by the addition of a heat dissipation unit.

Abstract: An electronic device includes: a circuit board having a mounting face, on which an electronic component is mounted; a heat receiver including a heat receiving plate opposed to the electronic component; and a fastening mechanism that fixes the heat receiver to the circuit board. The fastening mechanism includes a receiver having a proximal end and a distal end, the receiver having a mounting hole penetrating from the proximal end to the distal end; and a fastener that is inserted into the mounting hole for fastening to the receiver to press the heat receiver. The receiver is surface-mounted on the mounting face by soldering with the proximal end facing the mounting face.

Abstract: Embodiments disclosed herein comprise a die and methods of forming a die. In an embodiment, a die comprises, a die substrate, wherein the die substrate has a first thermal conductivity, and a first layer over the die substrate, wherein the first layer has a second thermal conductivity that is greater than the first thermal conductivity. In an embodiment, the die further comprises a second layer over the first layer, wherein the second layer comprises transistors.

Abstract: A semiconductor package including a lid having one or more heat pipes located on and/or within the lid to provide improved thermal management. A lid for a semiconductor package having one or more heat pipes thermally integrated with the lid may provide more uniform heat loss from the semiconductor package, reduce the risk of damage to the package due to excessive heat accumulation, and may enable the lid to be fabricated using less expensive materials, thereby reducing the costs of a semiconductor package.

Abstract: An integrated radiator having a temperature gradient is disposed between a high-temperature device and a low-temperature device. The integrated radiator includes a first heat dissipation unit and a second heat dissipation unit which are integrally fixed. The first heat dissipation unit is configured to maintain the high-temperature device within a first temperature range, and the second heat dissipation unit is configured to maintain the low-temperature device within a second temperature range. A thermal conductive path of the first heat dissipation unit is isolated from a thermal conductive path of the second heat dissipation unit, and the first heat dissipation unit is physically connected to but thermally separated from the second heat dissipation unit.

Abstract: A pluggable processor module includes a microprocessor package, a voltage regulator including a capacitor board, and contacts that each include a first side in contact with the microprocessor package and a second side in contact with the capacitor board. An assembly includes the pluggable processor module and a printed circuit board assembly (“PCBA”) including a module aperture that is large enough to receive the power board and narrower than the capacitor board.

Abstract: Various embodiments described herein provide a label configured for thermal conductivity and configured to pass over an edge of a printed circuit board (PCB) and attached to both sides of the printed circuit board. The label can be used with a printed circuit board that is associated with a memory sub-system, such as a memory module (e.g., solid state drive, SSD module).