Abstract: A semiconductor device has a plurality of semiconductor die mounted active surface to a carrier. An encapsulant is deposited over semiconductor die and carrier. Openings are formed through a surface of the encapsulant to divide the encapsulant into discontinuous segments. The openings have straight or beveled sidewalls. The openings can be formed partially through the surface of the encapsulant in an area between the semiconductor die. The openings can be formed partially through the surface of the encapsulant over the semiconductor die. The openings can be formed through the encapsulant in an area between the semiconductor die. A portion of the surface of the encapsulant is removed down to a bottom of the openings. The carrier is removed. An interconnect structure is formed over the encapsulant and the semiconductor die. The encapsulant is cured prior to or after forming the openings.

Abstract: A heating element and circuit module stack structure includes a circuit module carrying a chip unit, a heat sink having a flat bottom block protruded from a thermally conductive base member and in contact with the chip unit, a heat transfer layer set between the thermally conductive base member and the chip unit around the flat bottom block, an electric heating element mounted in between the heat transfer layer and the thermally conductive base member around the flat bottom block for heating the chip unit, and a thermal insulation component isolating the thermally conductive base member from the electric heating element. The circuit module turns on the electrical heating element when the temperature of the chip unit drops blow 0° C., and turns off the electrical heating element when the temperature reaches the normal operating temperature range, enabling the computer to be used in a low temperature or cold outdoor environment.

Abstract: An assembly for cooling heat generating components, such as power electronics, computer processors and other devices. Multiple components may be mounted to a support and cooled by a flow of cooling fluid. A single cooling fluid inlet and outlet may be provided for the support, yet multiple components, including components that have different heat removal requirements may be suitably cooled. One or more manifold elements may provide cooling fluid flow paths that contact a heat transfer surface of a corresponding component to receive heat.

Abstract: A semiconductor module arrangement includes a semiconductor module having a top side, an underside opposite the top side, and a plurality of electrical connection contacts formed at the top side. The semiconductor module arrangement additionally includes a printed circuit board, a heat sink having a mounting side, and one or a plurality of fixing elements for fixing the printed circuit board to the heat sink. Either a multiplicity of projections are formed at the underside of the semiconductor module and a multiplicity of receiving regions for receiving the projections are formed at the mounting side of the heat sink, or a multiplicity of projections are formed at the mounting side of the heat sink and a multiplicity of receiving regions for receiving the projections are formed at the underside of the semiconductor module. In any case, each of the projections extends into one of the receiving regions.

Abstract: Embodiments of mechanisms for forming a semiconductor die are provided. The semiconductor die includes a semiconductor substrate and a protection layer formed over the semiconductor substrate. The semiconductor die also includes a conductive layer conformally formed over the protection layer, and a recess is formed in the conductive layer. The recess surrounds a region of the conductive layer. The semiconductor die further includes a solder bump formed over the region of the conductive layer surrounded by the recess.

Abstract: The purpose of the present invention is to provide a power semiconductor device which has a light weight, high heat dissipation efficiency, and high rigidity. The power semiconductor device including a base 1, semiconductor circuits 2 which are arranged on the base 1, and a cooling fin 3 which cools each of the semiconductor circuits 2, in which one or more protruding portions 1a, 1b are formed on the base 1, widths of the protruding portions 1a, 1b in a direction parallel to the base 1 surface being longer than a thickness of the base 1, thereby providing power semiconductor devices 100, 200, 300, 400 which have a light weight, high heat dissipation efficiency, and high rigidity.

Abstract: A semiconductor switch insulation protection device and a power supply assembly. Said semiconductor switch protection device comprises a semiconductor switch having a metal component, an insulation component, and a pin installed at a bottom plane of said insulation component, and an insulation protection cover having a body with a second hole and a side belt. A front surface of said metal component is installed on a back surface of said insulation component. A metal portion, with a first hole and having a first height, is extended above an upper plane of said insulation component. Said second hole and said side belt are extended toward a back surface of said body, respectively, to form a hole column having a second height and a sidewall having a third height. Said metal portion is disposed in a groove formed by said back surface of said body, hole column and sidewall.

Abstract: Embodiments of the present disclosure provide an apparatus that comprises a connection circuit situated within a substrate and configured to communicatively couple a first integrated circuit disposed adjacent to a top surface of the apparatus to a second integrated circuit disposed adjacent to a bottom surface of the apparatus. The apparatus further comprises one or more enclosed heat dissipation structures situated within the substrate and configured to convey heat away from the first and second integrated circuits.

Abstract: Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.

Abstract: A heatsink is provided with a base body opposed to a heat generating body and absorbing heat from the heat generating body. Thermal resistance of that opposed portion of the base body which is opposed to the heat generating body is higher than thermal resistance of a surrounding portion surrounding the opposed portion.

Abstract: A method for fabricating a device is disclosed. An exemplary method includes providing a substrate and forming a plurality of fins over the substrate. The method further includes forming a first opening in the substrate in a first longitudinal direction. The method further includes forming a second opening in the substrate in a second longitudinal direction. The first and second longitudinal directions are different. The method further includes depositing a filling material in the first and second openings.

Abstract: A semiconductor module including a cooling unit by which a fine cooling effect is obtained is provided. A plurality of cooling flow paths (21c) which communicate with both of a refrigerant introduction flow path which extends from a refrigerant introduction inlet and a refrigerant discharge flow path which extends to a refrigerant discharge outlet are arranged in parallel with one another in a cooling unit (20). Fins (22) are arranged in each cooling flow path (21c). Semiconductor elements (32) and (33) are arranged over the cooling unit (20) so that the semiconductor elements (32) and (33) are thermally connected to the fins (22). By doing so, a semiconductor module (10) is formed. Heat generated by the semiconductor elements (32) and (33) is conducted to the fins (22) arranged in each cooling flow path (21c) and is removed by a refrigerant which flows along each cooling flow path (21c).

Abstract: Disclosed is a heat radiation device, which is in contact with a first heat-producing component having a higher value of guaranteed temperature and a second heat-producing component having a lower value of guaranteed temperature, and the heat radiation device comprises a metal member provided with a slit. The metal member is divided by the slit to have two heat radiation regions, a first heat radiation region and a second heat radiation region that are loosely coupled with each other in terms of heat conduction. The first heat-producing component is placed in contact with the first heat radiation region, and the second heat-producing component is placed in contact with the second heat radiation region.

Abstract: A semiconductor element cooling structure includes a side wall provided on a downstream side of flow of cooling air in a cooling air passage, a plurality of cooling fins forming cooling air branch passages, and a plurality of cooling fins forming cooling air branch passages. The cooling fins each have an end portion at a tip extending toward the cooling air passage. A virtual line obtained by connecting the end portions of the plurality of cooling fins and a virtual line obtained by connecting the end portions of the plurality of cooling fins each have a gradient with respect to a direction of the flow of the cooling air in the cooling air passage which is greater on an upstream side of the flow of the cooling air in the cooling air passage than on the downstream side thereof.

Abstract: A method of fabricating a semiconductor device is provided. The method forms a fin arrangement on a semiconductor substrate, the fin arrangement comprising one or more semiconductor fin structures. The method continues by forming a gate arrangement overlying the fin arrangement, where the gate arrangement includes one or more adjacent gate structures. The method proceeds by forming an outer spacer around sidewalls of each gate structure. The fin arrangement is then selectively etched, using the gate structure and the outer spacer(s) as an etch mask, resulting in one or more semiconductor fin sections underlying the gate structure(s). The method continues by forming a stress/strain inducing material adjacent sidewalls of the one or more semiconductor fin sections.

Abstract: A notebook computer is provided with: a casing in which electronic components including a CPU are accommodated; and a heat-dissipating unit including a heat-dissipating component 37 having plural fins, and a fan 31 for supplying air to the heat-dissipating component 37. A communicating path 35 is formed between an air outlet 32b of the fan 31 and a surface 37b of the heat-dissipating component 37 on a side thereof that opposes the fan 31, so as to communicate them. An opening 32c is formed in a fan case 32 between the air outlet 32b and a main unit 33 of the fan. A duct 36 is provided so as to communicate the opening 32c with the heat-dissipating component 37. With this structure, an electronic device can be provided which has a built-in heat-dissipating unit that can restrain increase in cost and weight, and remove dust on the heat-dissipating component.

Abstract: An electronic assembly includes a heat generating element, a heat dissipation fin set and a filter circuit board. The filter circuit board is disposed between the heat generating element and the heat dissipation fin set. The filter circuit board includes a metal layer, an electromagnetic band gap structure layer, an insulation layer disposed between the metal layer and the electromagnetic band gap structure layer and plural first thermal vias. The heat dissipation fin set is disposed on the heat generating element and directly contacts the metal layer. The electromagnetic band gap structure layer has plural conductive patterns arranged in the same pitches. The heat generating element directly contacts at least one of the conductive patterns. The first thermal vias pass through the insulation layer, the metal layer and the conductive patterns. Two ends of each first thermal via respectively connect the metal layer and the corresponding conductive pattern.

Abstract: A power converter including: a plurality of semiconductor devices forming a power conversion circuit; a base section to which the plurality of semiconductor devices are attached; and radiating fins dissipating heat generated from the semiconductor devices into outside air, in the power converter in which the direction of the flow of a refrigerant flowing into the radiating fins changes depending on the operation status of the power conversion circuit, the shape of each radiating fin changes in such a way that the cross-sectional area of a channel of the refrigerant on the outflow side becomes smaller than the cross-sectional area of the channel of the refrigerant on the inflow side in the radiating fins depending on the direction of the flow of the refrigerant.

Abstract: Disclosed is a luminaire, comprising a front convective heat sink, a rear convective heat sink, and a removable thin printed circuit board. The front convective heat sink has at least one optical aperture. The removable thin printed circuit board has an electrically-insulated back surface and a selectively electrically-insulated front surface. The front surface has exposed electrical contacts in at least one area corresponding to the at least one optical aperture. The removable thin printed circuit board is sandwiched between the front and rear convective heat sinks with a compressive force.

Abstract: A converter arrangement includes a housing having a first cooling air channel, at least one capacitor disposed in the housing, a fan for generating a cooling air flow, and a first power electronics module disposed in the housing between the at least one capacitor and the fan, as viewed in a direction of the cooling air flow. The first power electronics module is positioned in relation to the fan so as to only be cooled by a first partial air flow. A second partial air flow provided for cooling the at least one capacitor is routed via the first cooling air channel past the first power electronics module such that the second partial air flow is thermally separated from the first power electronics module.

Abstract: One illustrative method disclosed herein includes forming a sacrificial gate structure above a fin, wherein the sacrificial gate structure is comprised of a sacrificial gate insulation layer, a layer of insulating material, a sacrificial gate electrode layer and a gate cap layer, forming a sidewall spacer adjacent opposite sides of the sacrificial gate structure, removing the sacrificial gate structure to thereby define a gate cavity that exposes a portion of the fin, and forming a replacement gate structure in the gate cavity. One illustrative device disclosed herein includes a plurality of fin structures that are separated by a trench formed in a substrate, a local isolation material positioned within the trench, a gate structure positioned around portions of the fin structures and above the local isolation material and an etch stop layer positioned between the gate structure and the local isolation material within the trench.

Abstract: A flat radiator with flat type heat pipe and its application for portable computers is provided. The heat pipe in a radiator use tubular type and plate type structures. An air convective extended heat exchange surface surrounds and is over against the fan impeller, such that the radiator is extremely compacted, and the heat transport distance in heat pipe is shortened. Further introducing enhanced convective heat transfer structure and setting the fins according to the aerodynamics improve the heat dissipating capacity. The restrictions to a radiator when installing are reduced, which helps to implement the standardization of the radiator series. Also portable computers using the radiator are provided.

Abstract: A lead frame for assembling a semiconductor device has a die pad surrounded by lead fingers. Each of the lead fingers has a proximal end close to but spaced from an edge of the die pad and a distal end farther from the die pad. A semiconductor die is attached to a surface of the die pad. The die has die bonding pads on its upper surface that are electrically connected to the proximal ends of the lead fingers with bond wires. An encapsulation material covers the bond wires, semiconductor die and the proximal ends of the lead fingers. Prior to assembly, hot spots of the die are determined and the lead fingers closest to the hot spots are selected to project closer to the die than the other lead fingers. These longer lead fingers assist in dissipating the heat at the die hot spot.

Abstract: Electronic assemblies and methods are described. One embodiment includes a circuit board and a socket coupled to the circuit board. The assembly also includes a package positioned in the socket, the package including a substrate, a die, and a heat spreader, the die positioned between the substrate and the heat spreader. The assembly also includes a load plate positioned on the heat spreader, the load plate covering a majority of the heat spreader, the load plate applying a force to the heat spreader that couples the package to the socket. Other embodiments are described and claimed.

Abstract: A cooling structure for an electric device includes a plurality of cooling medium paths (724) through which a cooling medium for an inverter flows, an inlet (722) into which the cooling medium to be supplied to the plurality of cooling medium paths (724) flows, and a wall (726) provided between the inlet (722) and the plurality of cooling medium paths (724) to promote distribution of the cooling medium to each of the cooling medium paths (724).

Abstract: Certain embodiments provide a semiconductor device including a first substrate, a circuit element, a second substrate, a metal layer, and a radiation plate. The circuit element is formed on a front surface of the first substrate and has an electrode. The second substrate has a first face, and is laminated on the first substrate so that the first face of the second substrate faces a front surface of the first substrate. The second substrate has a via hole arranged on the electrode. The metal layer is formed inside of the via hole. The radiation plate is formed on a second face of the second substrate, and is connected to the metal layer.

Abstract: The present invention provides an electric circuit device in which it is possible to achieve simultaneously the improvement of cooling performance and reduction in operating loss due to line inductance. The above object can be attained by constructing multiple plate-like conductors so that each of these conductors electrically connected to multiple semiconductor chips is also thermally connected to both chip surfaces of each such semiconductor chip to release heat from the chip surfaces of each semiconductor chip, and so that among the above conductors, a DC positive-polarity plate-like conductor and a DC negative-polarity plate-like conductor are opposed to each other at the respective conductor surfaces.

Abstract: A method, a data processing system, and a computer program product identify blockages in a heat sink of a data processing system. An electromagnetic emitter and an electromagnetic detector are positioned on opposite sides of the heat sink. An intensity of a stream of electromagnetic radiation directed from the electromagnetic emitter is measured by the electromagnetic detector. Based on the measured intensity of the stream of electromagnetic radiation as measured by the electromagnetic detector, a blockage level of the heat sink is determined. If the blockage level of the heat sink exceeds a blockage threshold, an alert is generated.

Abstract: A semiconductor element cooling structure includes a side wall provided on a downstream side of flow of cooling air in a cooling air passage, a plurality of cooling fins forming cooling air branch passages, and a plurality of cooling fins forming cooling air branch passages. The cooling fins each have an end portion at a tip extending toward the cooling air passage. A virtual line obtained by connecting the end portions of the plurality of cooling fins and a virtual line obtained by connecting the end portions of the plurality of cooling fins each have a gradient with respect to a direction of the flow of the cooling air in the cooling air passage which is greater on an upstream side of the flow of the cooling air in the cooling air passage than on the downstream side thereof.

Abstract: In a package wherein a lead part coupled to a semiconductor element by wire bonding, an element retention member to retain the semiconductor element on the top face side and radiate heat on the bottom face side, and an insulative partition part to partition the lead part from the element retention member with an insulative resin appear, a creeping route ranging from the top face to retain the semiconductor element to a package bottom face on a boundary plane between the element retention member and an insulative partition part includes a bent route having a plurality of turns. Consequently, it is possible to inhibit an encapsulation resin to seal a region retaining the semiconductor element from exuding toward the bottom face side of the package.

Abstract: In one embodiment, there is an asymmetric multi-gated transistor that has a semiconductor fin with a non-uniform doping profile. A first portion of the fin has a higher doping concentration while a second portion of the fin has a lower doping concentration. In another embodiment, there is an asymmetric multi-gated transistor with gate dielectrics formed on the semiconductor fin that vary in thickness. This asymmetric multi-gated transistor has a thin gate dielectric formed on a first side portion of the semiconductor fin and a thick gate dielectric formed on a second side portion of the fin.

Abstract: Disclosed herein are various methods of forming high mobility fin channels on three dimensional semiconductor devices, such as, for example, FinFET semiconductor devices. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define an original fin structure for the device, and wherein a portion of a mask layer is positioned above the original fin structure, forming a compressively-stressed material in the trenches and adjacent the portion of mask layer, after forming the compressively-stressed material, removing the portion of the mask layer to thereby expose an upper surface of the original fin structure, and forming a final fin structure above the exposed surface of the original fin structure.

Abstract: A method for forming a tileable detector array is presented.

Abstract: A semiconductor device includes: a case with an opening formed thereat; a semiconductor element housed inside the case; a first conductor plate housed inside the case and positioned at one surface side of the semiconductor element; a second conductor plate housed inside the case and positioned at another surface side of the semiconductor element; a positive bus bar electrically connected to the first conductor plate, through which DC power is supplied; a negative bus bar electrically connected to the second conductor plate, through which DC power is supplied; a first resin member that closes off the opening at the case; and a second resin member that seals the semiconductor element, the first conductor plate and the second conductor plate and is constituted of a material other than a material constituting the first resin member.

Abstract: A semiconductor power module includes an active element and a passive element serving as semiconductor elements each having a first electrode on a front surface and a second electrode on a back surface thereof, a heat pipe having a first region defined as arrangement parts of the active element and the passive element on its one end side and electrically connected to one of the first and second electrodes of the active element and the passive element arranged in the first region, a cooling fin arranged in a second region defined on the other end side of the heat pipe, and a heat pipe provided to sandwich the active element, the passive element, and the cooling fin arranged on the heat pipe along with the heat pipe and electrically connected to the other of the first and second electrodes of the active element and passive element.

Abstract: A semiconductor device includes a wiring substrate, a semiconductor element mounted on the wiring substrate, a first radiator member arranged on and thermally coupled to the semiconductor element, and a second radiator member arranged on and thermally coupled to the first radiator member. The second radiator member includes projections which project out toward the first radiator member. The projections are formed on a circumference of a concentric circle with respect to a center point of the second radiator member. The first radiator member includes grooves in which the projections are movable. The grooves are formed on a circumference of a concentric circle with respect to a center point of the first radiator member. The projections are fitted to terminating ends of the grooves with the center point of the first radiator member and the center point of the second radiator member coincided.

Abstract: In a manufacturing method of a package carrier, a substrate including a first metal layer, a second metal layer having a top surface and a bottom surface opposite to each other, and an insulating layer between the first and second metal layers is provided. The second metal layer has a greater thickness than the first metal layer. A first opening passing through the first metal layer and the insulating layer and exposing a portion of the top surface of the second metal layer is formed. The first metal layer is patterned to form a patterned conductive layer. Second openings are formed on the bottom surface of the second metal layer. The second metal layer is divided into thermal conductive blocks by the second openings that do not connect the first opening. A surface passivation layer is formed on the patterned conductive layer and the exposed portion of the top surface.

Abstract: A heat dissipation device includes a heat sink and a fan duct. The fan duct includes a cover and a baffle. The cover includes a top plate, a first sidewall and a second sidewall respectively extending from opposite sides of the top plate. The baffle is located between the first sidewall and the second sidewall of the cover and pivotally contacts the first and second sidewalls. The baffle forms an angle with the top plate and is rotatable relative to the first and second sidewalls to adjust the angle between the baffle and the top plate.

Abstract: According to one embodiment, a heatsink includes a base and heat radiation fins placed on one of surfaces of the base and arranged in parallel to each other with a submillimeter narrow pitch. Each of the multiple heat radiation fins has a submillimeter thickness, a length in a width direction of 60 mm or smaller, and a height of 40 mm or smaller. The heatsink assembly may be constituted by allaying a plurality of the heatsinks and thermally connecting each of the heatsinks to each other using a heat transport device.

Abstract: A circuit board unit of an ECU has an upper surface on which semiconductor elements are installed, a lower surface that is on the opposite side of the circuit board unit from the upper surface, and a cutout portion that is formed below the upper surface. A power module includes a conductive protruding piece and an electrically insulating main portion that holds the protruding piece. The conductive protruding piece is inserted in the cutout portion to support the circuit board unit, and is electrically connected to the semiconductor elements.

Abstract: An exemplary LED module includes a ceramic substrate, a heat spreader, a heat sink, an LED die, and a packaging layer. The substrate defines a hole extending therethrough from a top side to a bottom side thereof. The heat spreader is disposed in the hole with a top side thereof substantially coplanar with the top side of the substrate. An outer circumferential surface of the heat spreader contacts an inner circumferential surface of the substrate around the hole. The heat sink is attached to the top sides of the substrate and the heat spreader. The LED die is attached to a bottom side of the heat spreader, and the packaging layer encapsulates the LED die.

Abstract: A heat sink assembly comprises a base having one or more slots, and further comprises one or more fins, each having an end configured for insertion into a respective one of the slots. Each fin end has a first surface that is configured for conformally engaging a first slot sidewall for good thermal conduction from the base into the fin, and has a second surface configured for cold welding to a second slot sidewall for good mechanical fastening of the fin to the base. The combined thermal bonding and cold-welding engagement are produced by pressing the fin ends of the fins into the base slots at a controlled pressing rate. Further, leading and/or trailing edges of the fins may be beveled to improve airflow directed edgewise across the fins.

Abstract: A mounting assembly includes a circuit board, a securing member and a heat dissipating device. A retainer is located on the circuit board. The securing member includes a positioning portion and a claw connected to the positioning portion. The heat dissipating device includes a base attached to the circuit board and a number of fins perpendicularly located on the base. The number of fins defines a number of first air paths and a number of second air paths substantially perpendicular to the number of first air paths. The positioning portion is received in at least one of the number of first air paths and at least one of the number of second air paths, and the claw is engaged with the retainer.

Abstract: A flat-panel display apparatus comprises a display panel, a circuit board, and a cover. The circuit board includes a first and second circuit boards. The first circuit board is arranged above the second circuit board so that, on the back side of the display panel, a mounting surfaces of the first and second circuit boards are approximately in parallel with a display surface of the display panel and do not overlap each other. Each of the first and second circuit boards have a primary mounting surface on which a large number of electrical components are mounted, and a secondary mounting surface that is opposite the primary mounting surface. The primary mounting surface of the first circuit board is arranged in an inverted orientation to the primary mounting surface of the second circuit board. A radiator with fins is provided on the secondary mounting surface side of the first circuit board.

Abstract: FINFET ICs and methods for their fabrication are provided. In accordance with one embodiment a FINFET IC is fabricated by forming in a substrate a region doped with an impurity of a first doping type. The substrate region is etched to form a recess defining a fin having a height and sidewalls and the recess adjacent the fin is filled with an insulator having a thickness less than the height. Spacers are formed on the sidewalls and a portion of the insulator is etched to expose a portion of the sidewalls. The exposed portion of the sidewalls is doped with an impurity of the first doping type, the exposed sidewalls are oxidized, and the sidewall spacers are removed. A gate insulator and gate electrode are formed overlying the fin, and end portions of the fin are doped with an impurity of a second doping type to form source and drain regions.

Abstract: At least a part of a heat radiation member (9) connected to a DRAM (11) for radiating heat of the DRAM (11) is exposed from a protection member (4) arranged to surround the DRAM and the heat radiation member (9) so as to protect the DRAM (11). Thus, it is possible to provide a semiconductor device having a preferable heat radiation performance.

Abstract: The semiconductor device has a unit stack body including a plurality of units stacked on one another. Each unit includes a power terminal constituted of a lead part and a connection part. The connection part is formed with a projection and a recess. When the units are stacked on one another, the projection of one unit is fitted to the recess of the adjacent unit, so that the power terminals of the respective unit are connected to one another.

Abstract: According to one embodiment, a cooling unit includes a heat dissipating mechanism, a fan, and a movable cover. The heat dissipating mechanism is housed in a housing of an electronic device. The fan is housed in the housing, and generates an air flow that collides against the heat dissipating mechanism. The movable cover includes a sheet and a knob. The sheet serves as an openable and closable cover to cover an opening on a chamber formed between the fan and the heat dissipating mechanism from the outside. The knob is located on the sheet and protrudes outward.

Abstract: A method of manufacturing a cooling fin and package substrate that includes preparing a mold, which has a support base and a resin layer formed on the support base and including on a side thereof a groove, which is configured to form a cooling fin; printing fireable paste containing a carbon component on a side of the mold that has the groove configured to form a cooling fin; removing the support base to leave a cooling object; and firing the cooling object.

Abstract: An integrated circuit device includes a gate region extending above a semiconductor substrate and extending in a first longitudinal direction. A first fin has a first sidewall that extends in a second longitudinal direction above the semiconductor substrate such that the first fin intersects the gate region. A second fin has a second sidewall extending in the second direction above the semiconductor substrate such that the second fin intersects the gate region. A shallow trench isolation (STI) region is formed in the semiconductor substrate between the first and second sidewalls of the first and second fins. A conductive layer disposed over the first insulating layer and over top surfaces of the first and second fins. A first insulating layer is disposed between an upper surface of the STI region and a lower surface of the conductive layer to separate the STI region from the conductive layer.