Abstract: A display device includes: a substrate on which is disposed: an organic light emitting element which generates and emits light with which an image is displayed; a thin film transistor connected to the organic light emitting element and with which the organic light emitting element is controlled to emit the light; an interlayer insulating layer disposed between the thin film transistor and the organic light emitting element, the interlayer insulating layer including an organic material; and a capping layer disposed between the interlayer insulating layer and the organic light emitting element, the capping layer including an inorganic material. The interlayer insulating layer disposed between the thin film transistor and the organic light emitting element does not have photosensitivity and does not include sulfur.

Abstract: This disclosure provides an OLED display panel, an OLED display device, and a method of manufacturing an OLED display panel. The OLED display panel comprises a substrate, OLED devices formed on the substrate, a touch layer, and a conductive isolation layer, the touch layer located on the side of the OLED devices facing away from the substrate, and the isolation layer located on the side of the touch layer facing away from the OLED devices. The surface of the touch layer facing away from the OLED devices conducts an electrical signal after absorbing water vapor. When a finger touches the isolation layer on the upper surface of the OLED display panel, the electrical signal on the surface of the touch layer facing away from the OLED devices can be conducted from the finger through the isolation layer, so that the touch position can be determined.

Abstract: An array substrate and a manufacturing method thereof, a display device and a driving method thereof. The array substrate includes: a first thin film transistor, a second thin film transistor and a pixel electrode, the pixel electrode being electrically connected to the first thin film transistor and the second thin film transistor, one of the first thin film transistor and the second thin film transistor being an n-type thin film transistor, and another one being a p-type thin film transistor.

Abstract: Provided are a foldable display panel, a manufacturing method thereof and a foldable display device. The foldable display panel is improved by replacing the conventional inorganic insulating layer with a bending resistant organic insulating layer to improve the bendability of the display panel; meanwhile, the cross-interconnected metal foil layer is added between the organic insulating layers to improve the resilience after bending, thereby improving the reliability of the product while improving the bending resistance of the display panel.

Abstract: A semiconductor light-emitting device includes a semiconductor layer, having a major surface and generating light, a light transmitting layer, having alight transmitting property and covering the major surface of the semiconductor layer, a light reflecting layer, having a light reflecting property and covering the light transmitting layer, and a bonding material diffusion region, formed in a surface layer portion of the light reflecting layer in a boundary portion between the light transmitting layer and the light reflecting layer and having an element having a property of being high in adhesion force with respect to the light transmitting layer more so than an element constituting the light reflecting layer.

Abstract: The present application provides an organic light emitting display substrate and a method of fabricating the same. The organic light emitting display substrate includes: a base substrate; and a driving transistor provided on the base substrate, wherein the driving transistor includes: an active layer; a first insulating layer having at least one sub-layer covering the active layer and having a first via hole therein; and a source electrode and a drain electrode disposed on a side of the first insulating layer distal to the base substrate, and connected to the active layer through the first via hole in the first insulating layer.

Abstract: An organic EL display unit includes a first substrate, a second substrate, a display layer, and a sealing section. The display layer is provided between the first substrate and the second substrate. The display layer includes an organic layer. The sealing section is provided continuously from an end surface of the display layer to at least a portion of respective end surfaces of the first substrate and the second substrate.

Abstract: A flexible display device is provided. The flexible display device comprises a flexible substrate on which an active layer, a gate insulating layer, a gate metal layer, an interlayer insulating layer, a second metal layer, a planar layer, an emitting layer and an encapsulation layer are sequentially stacked. The gate insulating layer covers the active layer, the interlayer insulating layer covers the gate metal layer and the planar layer covers the interlayer insulating layer and the second metal layer. A plurality of channels is disposed on the interlayer insulating layer, and both two ends of the channels extending toward edge of the interlayer insulating layer to penetrate the interlayer insulating layer.

Abstract: A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided. A display device includes a transistor and a capacitor. The transistor includes a first insulating layer, a first semiconductor layer in contact with the first insulating layer, a second insulating layer in contact with the first semiconductor layer, and a first conductive layer electrically connected to the first semiconductor layer via an opening portion provided in the second insulating layer. The capacitor includes a second conductive layer in contact with the first insulating layer, the second insulating layer in contact with the second conductive layer, and the first conductive layer in contact with the second insulating layer. The second conductive layer includes a composition similar to that of the first semiconductor layer. The first conductive layer and the second conductive layer are configured to transmit visible light.

Abstract: A display panel and a display device including the same are disclosed. The display panel includes: a substrate; plural scan lines disposed on the substrate, wherein the plural scan lines extend along a first direction; and a common electrode disposed on the substrate, wherein the common electrode includes a through hole having a curved edge, wherein the through hole overlaps at least a portion of one of the plural scan lines along a direction perpendicular to a surface of the substrate.

Abstract: A method of manufacturing an array substrate and an array substrate are provided. The method of manufacturing the array substrate includes forming a first metal layer on a substrate, wherein the first metal layer includes a plurality of first metal lines and a plurality of intermittent second metal lines, forming an interlayer dielectric insulating layer on the substrate and the first metal layer, and forming an intermittent data line on the interlayer dielectric insulating layer and the first metal layer, wherein the intermittent data line contacts the two ends of each of the intermittent second metal lines through the via holes.

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

Abstract: Disclosed are a thin film transistor and a display device, which can reduce parasitic capacitance between the first metal layer and the second metal layer so as to improve display quality of a liquid crystal display device. The thin film transistor includes a gate electrode, a gate insulation layer covering the gate electrode, a semiconductor layer formed on the gate insulation layer, and a source electrode and a drain electrode formed on the semiconductor layer. The semiconductor layer has an extension portion, a plane projection of which goes beyond a range of the gate electrode, and the drain electrode covers the extension portion.

Abstract: A transistor with a small footprint is provided. A transistor having high reliability is provided. A transistor is provided over an insulating layer that has a projection. Over the projection, at least a channel formation region of a semiconductor layer is provided. This can reduce the footprint of the transistor. The transistor has a curved structure, which inhibits light that enters from the outside from reaching a channel formation region of the semiconductor layer. Accordingly, deterioration of the transistor due to external light can be reduced, whereby the transistor can have increased reliability. The projection can be obtained by utilizing the internal stress of the layer formed over the insulating layer. Alternatively, the projection can be obtained by placing, under the insulating layer, a structure body for providing the insulating layer with the projection.

Abstract: The present disclosure provides an organic electroluminescent display panel including a plurality of pixel cells arranged into a matrix on a base substrate. Each pixel cell includes at least two subpixels arranged next to each other along a first direction. Each subpixel includes a light transmission region, an opaque emission region, and an emission region arranged along a second direction with the opaque emission region being disposed between the light transmission region and the emission region. The second direction and the first direction are perpendicular to each other. For the at least two subpixels in each pixel cell, the opaque emission regions are arranged in one straight line along the first direction, the light transmission regions are arranged in two straight lines along the first direction, and the emission regions are also arranged in the two straight lines along the first direction in which the light transmission regions are arranged.

Abstract: An organic light-emitting display panel, divided into a display region and a non-display region surrounding the display region, includes a substrate; an array layer formed over the substrate; a pixel defining layer formed on the surface of the array layer away from the substrate; and a plurality of organic light-emitting devices formed in a plurality of openings of the pixel defining layer. The plurality of organic light-emitting devices are disposed in the display region, and each organic light-emitting device includes an anode, an organic light-emitting layer, and a cathode sequentially formed on the substrate. The organic light-emitting display panel also includes a plurality of support units disposed in the non-display region. At least one support unit of the plurality of support units is disposed on the surface of the pixel defining layer away from the substrate.

Abstract: An LCD device includes first and second substrates and a liquid crystal layer disposed between the substrates. A gate transmitting member is disposed on the first substrate. The gate transmitting member includes a gate line and a gate electrode. A data transmitting member is disposed on the first substrate. The data transmitting member includes a data line, a source electrode, and a drain electrode. A pixel electrode is disposed in a pixel area. The pixel electrode is connected to the source electrode. A first gate insulating layer is disposed on the gate transmitting member. The first gate insulating layer has substantially a same shape as the gate transmitting member and has a greater size than a size of the gate transmitting member. A semiconductor layer is disposed on the first gate insulating layer. The semiconductor layer overlaps the gate electrode, the source electrode, and the drain electrode.

Abstract: A display panel and a repairing method thereof. The display panel includes micro LEDs and a circuit substrate. The circuit substrate includes first wires, second wires and connecting circuits. Respective one of the connecting circuits is configured to be electrically connected to respective one of the micro LEDs. Each of the connecting circuits includes a first pad, a second pad, a third pad and a connecting wire. The first pad is configured to be electrically connected to the corresponding micro LED and one of the first wires. The first and second pads are separated by a first gap. The second pad is configured to be electrically connected to one of the second wires. The second and third pads are separated by a second gap. The connecting wire is connected to the second pad and the third pad.

Abstract: A method of fabricating a substrate includes forming a planarization layer, and forming the planarization layer includes: forming a first planarization sub-layer on a base substrate on which a patterned film layer has been formed. A surface of the first planarization sub-layer facing away from the base substrate has a plurality of depressed portions. Forming the planarization layer further includes: forming a second planarization sub-layer at multiple depressed portions of the plurality of the depressed portions to obtain the planarization layer including the first planarization sub-layer and the second planarization sub-layer. A flatness of a surface of the planarization layer is higher than a flatness of the surface of the first planarization sub-layer.

Abstract: An active matrix substrate includes a gate metal layer including a plurality of gate bus lines, and a thin film transistor arranged in each pixel region, wherein: the thin film transistor includes a gate electrode, an oxide semiconductor layer arranged on the gate electrode with a gate insulating layer interposed therebetween, wherein the gate electrode is formed in the gate metal layer and is electrically connected to a corresponding one of the plurality of gate bus lines, the gate metal layer has a layered structure including a copper alloy layer and a copper layer arranged on the copper alloy layer, wherein the copper alloy layer is of a copper alloy including Cu and at least one additive metal element, wherein the additive metal element includes Al, and an Al content of the copper alloy is 2 at % or more and 8 at % or less.

Abstract: A display device includes a substrate including a bending area, a display area. A plurality of first wires is disposed above the substrate. A second wire is disposed above the plurality of first wires. A third wire is disposed above the second wire. At least a portion of the second wire and at least a portion of the third wire are disposed in the bending area.

Abstract: A TFT in which a channel region is formed of an oxide semiconductor is provided. Threshold voltage shift due to holes photoexcited in the vicinity of a source electrode and a drain electrode is prevented so that reliability is enhanced. A lower semiconductor layer is partially provided between an oxide semiconductor layer and a gate insulating film. The lower semiconductor layer is present in at least one of a source overlapping region where the oxide semiconductor layer overlaps a source electrode and a drain overlapping region where the oxide semiconductor layer overlaps a drain electrode. In contrast, a region where the lower semiconductor layer is absent is provided between the source overlapping region and the drain overlapping region.

Abstract: A display device includes a first base substrate including a display area and a peripheral area around the display area; a voltage line disposed on the peripheral area of the first base substrate; a protrusion disposed on the voltage line and including a first pattern containing a first color material and a second pattern containing a second color material different from the first color material; a connection electrode disposed on the protrusion and connected with the voltage line; and a light-blocking pattern disposed on the connection electrode and provided with an opening for partially exposing the connection electrode, wherein the protrusion includes a multilayer portion where the first pattern and the second pattern overlap each other and a single-layer portion where the first pattern and the second pattern do not overlap each other, and a lateral surface of the light-blocking pattern, defining the opening, overlaps the single-layer portion.

Abstract: A Micro LED transferring method, a Micro LED display panel and a Micro LED display device are provided. The Micro LED display panel includes a substrate, a pixel defining layer including multiple openings, first conducting layer located in the multiple openings, photosensitive conductive bonding layers and Micro LED structures. The photosensitive conductive bonding layer is solidified after receiving light, such that elements adhered on two opposite surfaces of the photosensitive conductive bonding layer are bonded together. Due to the photosensitive conductive bonding layer, a Micro LED is detected during a transferring process rather than after a bonding process, thereby eliminating a step of removing a bonded abnormal Micro LED, thus simplifying the detecting and repairing processes of Micro LEDs.

Abstract: An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.

Abstract: A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.

Abstract: An array substrate for a display device includes: a substrate having a plurality of pixel regions; a plurality of gate lines on the substrate, each of the plurality of gate lines including a plurality of gate patterns spaced apart from each other; a plurality of data lines crossing the plurality of gate lines to define the plurality of pixel regions; and a first connecting pattern connecting the plurality of gate patterns, the first connecting pattern having a different layer from the plurality of gate lines.

Abstract: A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an element formation substrate; a first substrate having an opening is formed over the light-emitting element and the terminal electrode with a bonding layer provided therebetween; an embedded layer is formed in the opening; a transfer substrate is formed over the first substrate and the embedded layer; the element formation substrate is separated; a second substrate is formed under the light-emitting element and the terminal electrode; and the transfer substrate and the embedded layer are removed. In addition, an anisotropic conductive connection layer is formed in the opening, and an electrode is formed over the anisotropic conductive connection layer. The terminal electrode and the electrode are electrically connected to each other through the anisotropic conductive connection layer.

Abstract: An integrated circuit pin is provided. The integrated circuit pin includes a glass substrate, a buffer layer above the glass substrate, a gate insulating layer above the buffer layer, a first metal layer above the gate insulating layer, a second metal layer above the first metal layer, a first insulating layer above the second metal layer, a second insulating layer above the first insulating layer, a bottom indium tin oxide (BITO) above the second insulating layer, and a top indium tin oxide covering the BITO. The BITO further extends downwardly along the inner wall of a through-hole penetrating through the first and second insulating layers such that the BITO is connected to the second metal layer. An in-cell touch panel is also provided. According to the disclosure, the thickness of the conductive layer can be increased. The anti-external interference and the drop reliability of ITP products can be enhanced.

Abstract: An OLED display device, including a substrate, an OLED display element disposed on a display area of the substrate, at least one light-sensitive component and a controller electrically connected to at least one light-sensitive component. The controller is configured to control the OLED display element to emit light, and to perform a luminance compensation on the OLED display element according to a luminance of the light emitted by the OLED display element detected by the at least one light-sensitive component.

Abstract: To form a sufficiently large storage capacitor, a liquid crystal display device includes a liquid crystal display panel having a first substrate, a second substrate, and a liquid crystal held between the first substrate and the second substrate, the liquid crystal display panel having multiple pixels arranged in matrix. The first substrate has, in a transmissive display area provided in each of the pixels, a laminated structure containing a first transparent electrode, a first insulating film, a second transparent electrode, a second insulating film, and a third transparent electrode which are laminated in this order. The first transparent electrode and the second transparent electrode are electrically insulated from each other and together form a first storage capacitor through the first insulating film, and the second transparent electrode and the third transparent electrode are electrically insulated from each other and together form a second storage capacitor through the second insulating film.

Abstract: A thin film transistor includes a gate, an active layer, a source, a drain. The source includes a connecting portion, a first sub-portion, a second sub-portion, and a third sub-portion that are arranged sequentially and in parallel. At first ends of the sub-portions, the connecting portion is connected to the portions to form two adjacent recesses. At second ends of the sub-portions, the distance from an end of the second sub-portion to the connecting portion is smaller than a distance from an end of the first sub-portion to the connecting portion and a distance from an end of the third sub-portion to the connecting portion. The drain includes a connecting block, a first drain and a second drain disposed in the two recesses respectively, and at least a portion of the connecting block is disposed between the first and the second drains to connect the first and the second drains.

Abstract: A method of manufacturing a display device including forming a display unit in a central area of a flexible substrate; forming a pattern portion comprising a metallic material in a peripheral area of the flexible substrate; forming an insulating layer covering the pattern portion; forming an encapsulation layer including at least one inorganic layer and at least one organic layer over the display unit; and irradiating a laser beam at a portion of the insulating layer corresponding to the pattern portion to form a recess in the insulating layer and melt at least a part of the pattern portion.

Abstract: The present disclosure proposes a method of producing an LTPS TFT array substrate. The method is about stacking of a gate insulating layer and an interlayer insulating layer for providing conditions for formation of a gate trench. In addition, stacking of the gate insulating layer and the interlayer insulating layer is produced with some blocks of forming a hole on the gate insulating layer and the interlayer insulating layer to form a hole pattern, filling the gate trench, and producing gate lines. In this way, the formation of the gate lines and the formation of the hole pattern on the gate insulating layer and the interlayer insulating layer are done using the same mask. The method of the present disclosure reduces the number of masks required compared with the method of the related art, thereby reducing the production costs.

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

Abstract: A display may have a backlight unit that provides backlight illumination. The backlight unit may include a light guide that distributes light throughout the display and an electrically adjustable lens array. The lens array may have lenses such as liquid lenses or liquid crystal lenses. By adjusting the lenses in the lens array, the angles of rays of backlight from the backlight unit may be adjusted to adjust the angle-of-view of the display. The angle-of-view of the display may also be adjusted using an electrically controllable filter layer. The electrically controllable filter layer may have a liquid crystal layer or a polymer dispersed liquid crystal layer that can be controlled using electrodes. When the electrodes apply signals to the electrically controllable filter layer, portions of the filter layer change to a dark or translucent state and restrict the angle-of-view of the display.

Abstract: According to one embodiment, a display device includes a gate line extending in a first direction, first and second source lines crossing the gate line and arranged in the first direction, a first light-shielding layer having first and second openings, and an oxide semiconductor layer crossing the gate line, and in the display device, the first opening and the second opening are arranged in a second direction crossing the first direction between the first source line and the second source line, the gate line is located between the first opening and the second opening, and the oxide semiconductor layer has a first overlapping portion overlapping the first opening.

Abstract: The present invention provides an array substrate and a manufacturing method thereof, and a display device. The array substrate comprises a base substrate, a metal pattern layer, a data line pattern layer, and a scan line pattern layer. Wherein, the data line pattern layer or the scan line pattern layer and the metal pattern layer are arranged in different layers and are directly connected to the metal pattern layer. So that the data line pattern layer or the scan line pattern layer and the metal pattern layer are formed a parallel structure. Because the resistance of the parallel structure is smaller than the resistance of the data line pattern layer or the scan line pattern layer, the resistance of the parallel structure when is used as a data line or a scan line, is reduced, thereby the display effect is improved.

Abstract: A display device can include a flexible substrate including an active area, a bending area, and an area outside the bending area, the bending area configured to be bent flexibly; a plurality of pixels to display an image in the active area, each of the plurality of pixels including an organic light emitting diode (OLED); at least one signal line and at least one power line disposed on the flexible first substrate, the at least one signal line and the at least one power ling being disposed on a same layer in the bending area; and a planarization layer disposed in the active area and covering the at least one signal line and the at least one power line disposed on the same layer in the bending area, wherein the OLEDs in the plurality of pixels are disposed on the planarization layer.

Abstract: The purpose of the invention is to avoid the domain in high definition liquid crystal display devices. The representative structure is as follows. Scan lines extending in a first direction, video signal lines extending in a second direction, a pixel is formed in an area surrounded by the video signal lines and the scan lines, the pixel includes: a thin film transistor, a flattening film that covers the thin film transistor, a first electrode formed on the flattening film, a second electrode formed over the first electrode via an insulating film, and a contact hole that is formed in the flattening film to connect the first electrode and the thin film transistor; the second electrode is formed in common in plural pixels, and has a slit between the video signal lines; wherein the slit is formed continuously in a plurality of pixels arranged in the second direction.

Abstract: A display device includes a scan line extending in a first direction. A plurality of data lines cross the scan line. A driving voltage line crosses the scan line. An active pattern includes a plurality of channel regions and a plurality of conductive regions. A control line is connected to the plurality of data lines and the driving voltage line. The active pattern includes a shielding part overlapping at least one data line of the plurality of data lines. The control line includes a plurality of main line parts each extending in the first direction, and a detour part connecting two adjacent main line parts of the plurality of main line parts to each other. The detour part extends along a periphery of the active pattern and crosses the at least one data line of the plurality of data lines.

Abstract: There are provided a subpixel structure of a display device and a touch screen-integrated display device, including: a plurality of gate lines; a plurality of data lines configured to define subpixels by intersecting with the gate lines; a thin-film transistor; a pixel electrode disposed in the subpixel area; and a common electrode disposed to be overlapped with the pixel electrode with a protective layer interposed therebetween. The pixel electrode has patterns including a plurality of pixel electrode spaces in an area corresponding to the thin-film transistor so as to suppress a white touch mura defect and also suppress a decrease in transmittance occurring at an interface between an open area and a BM area.

Abstract: A display device includes a first substrate, a pixel array layer on the first substrate, a second substrate on the pixel array layer, and a cover layer surrounding a side of the second substrate. Furthermore, the display device includes an active area and a non-active area. The second substrate is in the active area, and the cover layer is in the non-active area. The cover layer has different thicknesses to define a step.

Abstract: A flexible display includes a flexible substrate including an active area, an inactive area extending from the active area, and a bending area extending from the inactive area; a plurality of inorganic layers on the flexible substrate in the active area and in the inactive area; a signal line on the inorganic layers and extending from the active area to the inactive area; and a connection line electrically connected to the signal line and extending to the bending area from the inactive area; in which the inorganic layer is not disposed in the bending area so that cracks are prevented upon bending.

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

Abstract: According to one embodiment, a display device comprises an insulating substrate, a pixel in a display area, a scanning line extending in a first direction, a signal line extending in a second direction, a shield line between the insulating substrate and the scanning line, a pixel electrode in the pixel, and a first switching element including a first semiconductor layer. The first semiconductor layer is provided between the scanning line and the shield line, and comprises an intersection area in which the first semiconductor layer intersects the scanning line. The shield line overlaps the intersection area, and is electrically connected to the scanning line through a contact portion.

Abstract: Disclosed is a manufacturing method of an array substrate, comprising steps of: depositing a first metal layer on a substrate; depositing a gate insulating layer on the substrate and the first metal layer, and forming a first via hole in the in-plane region of the gate insulating layer; depositing a second metal layer in an in-plane region and an out-of-plane of the gate insulating layer, wherein the second metal layer located in the in-plane region fills the first via hole; depositing a passivation layer on the second metal layer and the gate insulating layer, and forming a second via hole in the in-plane region of the passivation layer; forming a third via hole and a fourth via hole in the out-of plane region of the passivation layer, respectively; depositing a transparent conductive layer in the in-plane region and in the out-of-plane region of the passivation layer, respectively.

Abstract: An OLED and a display device has OLED are provided. The OLED includes an anode; an organic emission layer positioned on the anode, the organic emission layer includes a multilayer functional layer; a diffusion layer is positioned between at least two adjacent functional layers of the multilayer functional layer, the diffusion layer dissociates metal ions, the metal ions is diffusing to the functional layer adjacent to the diffusion layer for filling traps of the functional layer which is adjacent to the diffusion layer. The OLED of this invention could fill traps of the organic molecular materials, and decreases joule heating effect which generated by getting rid of the carriers bonded by traps. Therefore, it achieves to enhance life time and luminous performance of OLED.

Abstract: An electroluminescent display device includes an overcoat layer on a substrate; a plurality of low-refractive members formed of an inorganic matter and disposed on the overcoat layer; a first electrode on the overcoat layer and the plurality of low-refractive members; a bank layer disposed on the overcoat layer and the first electrode and including an opening configured to expose the first electrode; an emitting layer disposed on the first electrode; and a second electrode disposed on the emitting layer, wherein each of the plurality of low-refractive members includes a first flat surface contacting the first electrode, a second flat surface having an area greater than that of the first flat surface and contacting the overcoat layer and first and second inclined surfaces connecting the first flat surface and the second flat surface, and, wherein a refractive index of each of the plurality of low-refractive members is lower than those of the overcoat layer and the first electrode.

Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.