Abstract: A package structure includes first and second dies, an insulation structure, a through via, a dielectric layer and a redistribution layer. The second die electrically bonded to the first die includes a through substrate via. The insulation structure is disposed on the first die and laterally surrounds the second die. The through via penetrates through the insulation structure to electrically connect to the first die. The dielectric layer is disposed on the second die and the insulation structure. The redistribution layer is embedded in the dielectric layer and electrically connected to the through via. The redistribution layer includes a first barrier layer and a conductive layer on the first barrier layer. The through substrate via is electrically connected to the redistribution layer, and the conductive layer is in contact with a conductive post of the through via and separated from the through substrate via by the first barrier layer therebetween.

Abstract: Provided is a semiconductor structure including an interconnect structure, disposed over a substrate; a pad structure, disposed over and electrically connected to the interconnect structure, wherein the pad structure comprises a metal pad and a dielectric cap on the metal pad, and the pad structure has a probe mark recessed from a top surface of the dielectric cap into a top surface of the metal pad; a protective layer, conformally covering the top surface of the dielectric cap and the probe mark; and a bonding structure, disposed over the protective layer, wherein the bonding structure comprises: a bonding dielectric layer at least comprising a first bonding dielectric material and a second bonding dielectric material on the first bonding dielectric material; and a first bonding metal layer disposed in the bonding dielectric layer and penetrating through the protective layer and the dielectric cap to contact the metal pad.

Abstract: A solid-state imaging device capable of preventing variation in bonding strength in a bonding plane between a first semiconductor substrate and a second semiconductor substrate is provided. The solid-state imaging device includes a first semiconductor substrate having a plurality of first conductors, and a second semiconductor substrate bonded to the first semiconductor substrate and having a plurality of second conductors In a bonding plane between the first and second semiconductor substrates, the device includes regions where the conductors overlap, regions where insulating films and the conductors overlap, and regions where the insulating films overlap. The proportion of areas where the first insulating films and the second insulating films are bonded together to the bonding area between the first semiconductor substrate and the second semiconductor substrate is constant before and after the first semiconductor substrate and the second semiconductor substrate are bonded together.

Abstract: A display device comprises a substrate in which a first subpixel and a second subpixel arranged to adjoin the first subpixel are defined, a first electrode provided in each of the first subpixel and the second subpixel on the substrate, a light emitting layer provided in each of the first subpixel and the second subpixel on the first electrode, a second electrode commonly provided in the first subpixel and the second subpixel on the light emitting layer, a trench portion provided between the first subpixel and the second subpixel, and an insulating portion filling at least a part of the trench portion.

Abstract: In a method of manufacturing a semiconductor device, a magnetic random access memory (MRAM) cell structure is formed. The MRAM cell structure includes a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode. A first insulating cover layer is formed over the MRAM cell structure. A second insulating cover layer is formed over the first insulating cover layer. An interlayer dielectric (ILD) layer is formed. A contact opening in the ILD layer is formed, thereby exposing the second insulating cover layer. A part of the second insulating cover layer and a part of the first insulating cover layer are removed, thereby exposing the top electrode. A conductive layer is formed in the opening contacting the top electrode.

Abstract: A manufacturing method of a semiconductor structure includes: a substrate is provided; and an intermediate layer is formed on the substrate, an I-shaped member and a wall-shaped member are formed in the intermediate layer, a top surface of the wall-shaped member is not lower than a top surface of the I-shaped member, and a bottom surface of the wall-shaped member is not higher than a bottom surface of the I-shaped member.

Abstract: A bonding structure is provided, including a first substrate; a second substrate disposed opposite the first substrate; a first bonding layer disposed on the first substrate; a second bonding layer disposed on the second substrate and opposite the first bonding layer; and a silver feature disposed between the first bonding layer and the second bonding layer. The silver feature includes a silver nano-twinned structure including parallel twin boundaries. The silver nano-twinned structure includes 90% or more [111] crystal orientation. A method for forming a bonding structure is also provided. Each of steps of forming a first silver feature and second silver feature includes sputtering or evaporation coating. Negative bias ion bombardment is applied to the first silver feature and second silver feature during sputtering or evaporation.

Abstract: An integrated circuit interconnect structure includes a first metallization level including a first metal line having a first sidewall and a second sidewall extending a length in a first direction. A second metal line is adjacent to the first metal line and a dielectric is between the first metal line and the second metal line. A second metallization level is above the first metallization level where the second metallization level includes a third metal line extending a length in a second direction orthogonal to the first direction. The third metal line extends over the first metal line and the second metal line but not beyond the first sidewall. A conductive via is between the first metal line and the third metal line where the conductive via does not extend beyond the first sidewall or beyond the second sidewall.

Abstract: The present disclosure provides example embodiments relating to conductive features, and methods of forming the conductive features, that have differing dimensions. In an embodiment, a structure includes a substrate, a dielectric layer over the substrate, and first and second conductive features through the dielectric layer to first and second source/drain regions, respectively, on the substrate. The first conductive feature has a first length along a longitudinal axis of the first conductive feature and a first width perpendicular to the first length. The second conductive feature has a second length along a longitudinal axis of the second conductive feature and a second width perpendicular to the second length. The longitudinal axis of the first conductive feature is aligned with the longitudinal axis of the second conductive feature. The first width is greater than the second width, and the first length is less than the second length.

Abstract: Provided are a non-volatile memory device and a manufacturing method thereof. The non-volatile memory device includes a substrate having a memory region and a dummy region surrounding the memory region, an interconnect structure, memory cells, conductive vias and dummy vias. The interconnect structure is disposed on the substrate and in the memory region. The memory cells are disposed on the interconnect structure and arranged in an array when viewed from a top view. The memory cells include first memory cells in the memory region and second memory cells in the dummy region. The conductive vias are disposed in the memory region and between the first memory cells and the interconnection structure to electrically connect each of the first memory cells to the interconnect structure. The dummy vias are disposed in the dummy region and surround the memory region.

Abstract: One example described herein includes an integrated circuit (IC) package. The IC package includes a semiconductor die comprising an IC and an IC package enclosure that substantially encloses the semiconductor die. The IC package also includes at least one conductive metal contact. Each of the at least one conductive metal contact is coupled to the semiconductor die and comprises a planar solder surface exterior to the IC package enclosure to which the respective at least one metal contact is soldered to an external conductive metal contact. The planar solder surface includes at least one solder surface feature.

Abstract: A method of forming a component can include electrochemically depositing a metallic material onto a carrier component to a thickness of greater than 50 microns. The metallic material can include crystal grains and at least 90% of the crystal grains can include nanotwin boundaries. The metallic material can include a Copper-Silver alloy (Cu—Ag) with between about 0.5-2 at %-Ag.

Abstract: A metal-dielectric bonding method includes providing a first semiconductor structure including a first semiconductor layer, a first dielectric layer on the first semiconductor layer, and a first metal layer on the first dielectric layer, where the first metal layer has a metal bonding surface facing away from the first semiconductor layer; planarizing the metal bonding surface; applying a plasma treatment on the metal bonding surface; providing a second semiconductor structure including a second semiconductor layer, and a second dielectric layer on the second semiconductor layer, where the second dielectric layer has a dielectric bonding surface facing away from the second semiconductor layer; planarizing the dielectric bonding surface; applying a plasma treatment on the dielectric bonding surface; and bonding the first semiconductor structure with the second semiconductor structure by bonding the metal bonding surface with the dielectric bonding surface.

Abstract: Structures and techniques provide bond enhancement in microelectronics by trapping contaminants and byproducts during bonding processes, and arresting cracks. Example bonding surfaces are provided with recesses, sinks, traps, or cavities to capture small particles and gaseous byproducts of bonding that would otherwise create detrimental voids between microscale surfaces being joined, and to arrest cracks. Such random voids would compromise bond integrity and electrical conductivity of interconnects being bonded. In example systems, a predesigned recess space or predesigned pattern of recesses placed in the bonding interface captures particles and gases, reducing the formation of random voids, thereby improving and protecting the bond as it forms. The recess space or pattern of recesses may be placed where particles collect on the bonding surface, through example methods of determining where mobilized particles move during bond wave propagation.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

Abstract: A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first interlayer insulating film, and the first dummy electrode being embedded in the first interlayer insulating film, having one surface located on same plane as the one surface of the first interlayer insulating film, and being disposed around the first electrode pad; and a second wiring layer including a second interlayer insulating film, a second electrode pad, and a second dummy electrode, the second electrode pad being embedded in the second interlayer insulating film, having one surface located on same surface as one surface of the second interlayer insulating film, and being bonded to the first electrode pad, and the second dummy electrode having one surface located on same plane as the surface located

Abstract: A method for manufacturing a display panel includes: sequentially forming a conductive pattern, a light-emitting layer and a cathode layer on a substrate. The conductive pattern is formed by a one-time patterning process, and includes an auxiliary electrode layer. In a direction parallel to the substrate, both the first protective electrode and the second protective electrode in the auxiliary electrode layer extend over the metal electrode, a second orthographic projection of the second protective electrode on the substrate is within a first orthographic projection of the first protective electrode on the substrate, and an outer boundary of the second orthographic projection is staggered from an outer boundary of the first orthographic projection. The cathode layer is in contact with the first protective electrode and a sidewall of the metal electrode.

Abstract: There is provided a semiconductor device including: a semiconductor element; a support substrate configured to support the semiconductor element; an intermediate metal layer interposed between the semiconductor element and the support substrate in a thickness direction of the support substrate, wherein the semiconductor element and the intermediate metal layer are bonded by solid phase diffusion bonding; and a first positioning portion including a portion of the semiconductor element and a first portion of the intermediate metal layer and configured to suppress relative movement between the semiconductor element and the intermediate metal layer.

Abstract: The disclosed subject matter relates generally to methods of forming a semiconductor device, such as a moisture sensor. A plurality of electrodes and a bond pad are formed in a dielectric region. A passivation layer is formed on each electrode in the plurality of electrodes and the bond pad. A barrier layer is formed on the passivation layer. A plurality of trenches are formed to extend through the barrier layer and into the dielectric region. Formation of the trenches simultaneously exposes an upper surface of the bond pad. A moisture sensitive dielectric layer is formed on the barrier layer. Formation of the moisture sensitive dielectric layer also fills the trenches to form a plurality of projections, each projection being formed between two electrodes in the plurality of electrodes.

Abstract: A leadframe is formed by chemically half-etching a sheet of conductive material. The half-etching exposes a first side surface of a first contact of the leadframe. A solder wettable layer is plated over the first side surface of the first contact. An encapsulant is deposited over the leadframe after plating the solder wettable layer.

Abstract: A method of fabricating an IC device is disclosed, in which a dielectric layer is first etched to form a contact opening and a dummy opening. Both do not extend through the dielectric layer, the contact opening has a width greater than that of the dummy opening. A sacrificial layer, which covers inner surface of the dummy opening and the dielectric layer at side surface of the contact opening, and from which the dielectric layer at bottom surface of the contact opening is exposed, is then formed, and under protection of this sacrificial layer, the dielectric layer exposed in the contact opening is etched in a self-aligned manner, a self-aligned contact hole is formed, in which a surface of the conductive structure is exposed. In this way, reliability of a contact that extends in both contact opening and self-aligned contact hole is ensured, avoiding the problem of possible contact failure.

Abstract: Disclosed are semiconductor devices including through vias and methods of fabricating the same. The methods may include forming a first structure including a metal pattern and a second structure on the first structure. The metal pattern includes an upper surface facing the second structure. The methods may also include etching the second structure to form a via hole exposing the metal pattern, oxidizing a first etch residue in the via hole to convert the first etch residue into an oxidized first etch residue, and removing the oxidized first etch residue. After removing the oxidized first etch residue, the upper surface of the metal pattern may include a first portion that includes a recess and has a first surface roughness and a second portion that is different from the first portion and has a second surface roughness. The first surface roughness may be greater than the second surface roughness.

Abstract: Examples herein include die to metallization structure connections that eliminate the solder joint to reduce the resistance and noise on the connection. In one example, a first die is attached to a metallization layer by a plurality of copper interconnections and a second is attached to the metallization layer opposite the first die through another plurality of copper interconnections. In this example, the copper interconnects may connect the respective die to a metallization structure in the metallization layer.

Abstract: A display panel is provided. The display panel includes a bank layer and a quantum dots material layer on a base substrate. The bank layer defines a plurality of bank apertures. The quantum dots material layer includes a plurality of quantum dots blocks respectively in at least some of the plurality of bank apertures. At least a portion of the bank layer between two adjacent bank apertures includes a first surface, a second surface opposite to the first surface, a third surface connecting the first surface and the second surface closer to a first bank aperture, and a fourth surface connecting the first surface and the second surface closer to a second bank aperture. At least a portion of a third surface or a fourth surface of a portion of the bank layer between two adjacent bank apertures is a wavy surface including alternating convex and concave portions.

Abstract: A cavity may be formed in a dielectric material layer overlying a substrate. A layer stack including a metallic barrier liner, a metallic fill material layer, and a metallic capping material may be deposited in the cavity and over the dielectric material layer. Portions of the layer stack located above a horizontal plane including a top surface of the dielectric material layer may be removed. A contiguous set of remaining material portions of the layer stack includes a metal interconnect structure that is free of a pitted surface.

Abstract: There is set forth herein a photonics device. The photonics device can comprise a substrate, a conductive material formation, a dielectric stack, and a barrier layer. The photonics device can transmit a light signal.

Abstract: A semiconductor package includes: a first structure having a first insulating layer disposed on one surface, and first electrode pads and first dummy pads penetrating through the first insulating layer, a second structure having a second insulating layer having the other surface bonded to the one surface and the first insulating layer and disposed on the other surface, and second electrode pads and second dummy pads that penetrate through the second insulating layer, the second electrode pads being bonded to the first electrode pads, respectively, and the second dummy pads being bonded to the first dummy pads, respectively. In the semiconductor chip, ratios of surface areas per unit area of the first and second dummy pads to the first and second insulating layers on the one surface and the other surface gradually decrease toward sides of the first and second structures.

Abstract: Provided is a circuit structure including a substrate, a pad, a dielectric layer, a conductive layer, an adhesion layer, and a conductive bump. The pad is disposed on the substrate. The dielectric layer is disposed on the substrate and exposes a portion of the pad. The conductive layer contacts the pad and extends from the pad to cover a top surface of the dielectric layer. The adhesion layer is disposed between the dielectric layer and the conductive layer. The conductive bump extends in an upward manner from a top surface of the conductive layer. The conductive bump and the conductive layer are integrally formed. A method of manufacturing the circuit structure is also provided.

Abstract: Multiple component package structures are described in which an interposer chiplet is integrated to provide fine routing between components. In an embodiment, the interposer chiplet and a plurality of conductive vias are encapsulated in an encapsulation layer. A first plurality of terminals of the first and second components may be in electrical connection with the plurality of conductive pillars and a second plurality of terminals of first and second components may be in electrical connection with the interposer chiplet.

Abstract: A structure and a method of forming are provided. The structure includes a first dielectric layer overlying a first substrate. A first connection pad is disposed in a top surface of the first dielectric layer and contacts a first redistribution line. A first dummy pad is disposed in the top surface of the first dielectric layer, the first dummy pad contacting the first redistribution line. A second dielectric layer overlies a second substrate. A second connection pad and a second dummy pad are disposed in the top surface of the second dielectric layer, the second connection pad bonded to the first connection pad, and the first dummy pad positioned in a manner that is offset from the second dummy pad so that the first dummy pad and the second dummy pad do not contact each other.

Abstract: A bonding structure is provided. The bonding structure includes a conductive layer, a seed layer, and a nanotwinned copper (NT-Cu) layer. The seed layer is disposed on the conductive layer. The NT-Cu layer is disposed on the seed layer. The NT-Cu layer has anisotropic crystal structure.

Abstract: A printed circuit board according to an embodiment includes: an insulating layer; and a circuit pattern disposed on the insulating layer, wherein the circuit pattern includes an upper surface, a lower surface, a first side surface, and a second side surface, and surface roughness Ra of at least three surfaces of the upper surface, the lower surface, the first side surface, and the second side surface of the circuit pattern is 0.1 ?m to 0.31 ?m.

Abstract: The disclosure provides a display panel, a manufacturing method thereof, and a display device. The display panel includes a substrate layer, a gate layer, an insulating layer, and an active layer. The gate layer is disposed on the substrate layer and includes a first gate layer and a second gate layer. The second gate layer is disposed on a surface of the first gate layer. The insulating layer covers the gate layer and the substrate layer. The active layer is disposed on a surface of the insulating layer away from the gate layer. The active layer includes a first layer section and a second layer section connected to the first layer section, and a surface of the second layer section is above a surface of the first section layer.

Abstract: Embodiments of the invention include a stacked die system and methods for forming such systems. In an embodiment, the stacked die system may include a first die. The first die may include a device layer and a plurality of routing layers formed over the device layer. The plurality of routing layers may be segmented into a plurality of sub regions. In an embodiment no conductive traces in the plurality of routing layers pass over a boundary between any of the plurality of sub regions. In an embodiment, the stacked die system may also include a plurality of second dies stacked over the first die. According to an embodiment, at least a two of the second dies are communicatively coupled to each other by a die to die interconnect formed entirely within a single sub region in the first die.

Abstract: In sonic examples, a method includes pre-stressing a flange, heating the flange to a die-attach temperature, and attaching a die to the flange at the die-attach temperature using a die-attach material. In some examples, the flange includes a metal material, the die-attach temperature may be at least two hundred degrees Celsius, and the die-attach material may include solder and/or an adhesive. In some examples, the method includes cooling the semiconductor die and metal flange to a room temperature after attaching the semiconductor die to the metal flange at the die-attach temperature using a die-attach material.

Abstract: A semiconductor apparatus including a bonding region in which a wire is bonded, includes: a semiconductor substrate; an oxide film provided on a principal surface of the semiconductor substrate in the bonding region; a polysilicon layer provided on the oxide film; an interlayer film partially provided on the polysilicon layer; a barrier metal directly provided on the polysilicon layer and the interlayer film; and an electrode provided on the barrier metal.

Abstract: A via opening including an etch stop layer (ESL) opening and methods of forming the same are provided which can be used in the back end of line (BEOL) process of IC fabrication. A metal feature is provided with a first part within a dielectric layer and with a top surface. An ESL is formed with a bottom surface of the ESL above and in contact with the dielectric layer, and a top surface of the ESL above the bottom surface of the ESL. An opening at the ESL is formed exposing the top surface of the metal feature; wherein the opening at the ESL has a bottom edge of the opening above the bottom surface of the ESL, a first sidewall of the opening at a first side of the metal feature, and a second sidewall of the opening at a second side of the metal feature.

Abstract: An interconnection structure of an integrated circuit semiconductor device includes: a first conductive layer on a semiconductor substrate; an interlayer insulating layer on the first conductive layer and including a trench and a via hole; a via layer in the via hole, the via layer penetrating the interlayer insulating layer through a bottom of the trench to contact the first conductive layer, the via layer including a protrusion protruding to a height greater than a height of the trench; a barrier layer selectively on the bottom and sidewalls of the trench and on sidewalls of the via layer in the trench; a cap layer on a surface of the via layer; and a second conductive layer in the trench on the barrier layer. The cap layer is electrically connected to the first conductive layer through the via layer.

Abstract: A method to form a 3D integrated circuit, the method including: providing a first wafer including a first crystalline substrate, a plurality of first transistors, and first copper interconnecting layers, where the first copper interconnecting layers at least interconnect the plurality of first transistors; providing a second wafer including a second crystalline substrate, a plurality of second transistors, and second copper interconnecting layers, where the second copper interconnecting layers at least interconnect the plurality of second transistors; and then performing a face-to-face bonding of the second wafer on top of the first wafer, where the face-to-face bonding includes copper to copper bonding; and thinning the second crystalline substrate to a thickness of less than 5 micro-meters.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method includes forming a plurality of bond pad structures over an interconnect structure on a front-side of a semiconductor body. The plurality of bond pad structures respectively have a titanium contact layer. The interconnect structure and the semiconductor body are patterned to define trenches extending into the semiconductor body. A dielectric fill material is formed within the trenches. The dielectric fill material is etched to expose the titanium contact layer prior to bonding the semiconductor body to a carrier substrate. The semiconductor body is thinned to expose the dielectric fill material along a back-side of the semiconductor body and to form a plurality of integrated chip die. The dielectric fill material is removed to separate the plurality of integrated chip die.

Abstract: Structures and techniques provide bond enhancement in microelectronics by trapping contaminants and byproducts during bonding processes, and arresting cracks. Example bonding surfaces are provided with recesses, sinks, traps, or cavities to capture small particles and gaseous byproducts of bonding that would otherwise create detrimental voids between microscale surfaces being joined, and to arrest cracks. Such random voids would compromise bond integrity and electrical conductivity of interconnects being bonded. In example systems, a predesigned recess space or predesigned pattern of recesses placed in the bonding interface captures particles and gases, reducing the formation of random voids, thereby improving and protecting the bond as it forms. The recess space or pattern of recesses may be placed where particles collect on the bonding surface, through example methods of determining where mobilized particles move during bond wave propagation.

Abstract: Integrated chips and methods of forming lines in the same include forming a line layer on a substrate. An opening is etched into the line layer that exposes the substrate. A plug is formed in the opening. The line layer is patterned to form a line that terminates at the plug.

Abstract: The invention discloses a packaging structure and manufacturing method of a SiC MOSFET module, which is composed of SiC MOSFET chips, upper DBC substrate, lower DBC substrate, ceramic interposer, silicon oxide dielectric layer, nano silver pastes, redistribution layer, through-ceramic-hole conductive metals and power terminals. The SiC MOSFET chips are connected to the lower DBC substrate using nano silver pastes in the invention. Besides, some rectangular frames are made on the ceramic interposer, and the SiC MOSFET chips are embedded in the ceramic interposer by filling dielectric materials. The upper surfaces of the chips and the ceramic interposer are covered with a conductive metal redistribution layer, and the upper and lower surfaces of the ceramic interposer are interconnected with the upper and lower DBC substrates, respectively. The power terminals are led out from the conductive copper layers of the upper and lower DBC substrates.

Abstract: In some embodiments, connecting a component to a substrate by adhesion to an oxidized solder surface includes: forming one or more conductive solder connections between the component and one or more conductive portions of the substrate; adhering the component to an oxidized surface of a solder portion applied to the substrate.

Abstract: The present invention provides a conductive film in which a change in the surface state is suppressed and the light-fast adhesiveness of a protective layer is excellent, a touch panel sensor, and a touch panel. The conductive film according to the present invention includes a substrate, a patterned layer to be plated which is arranged on at least one surface of the substrate and has a functional group interacting with a plating catalyst or a precursor thereof, a copper plating layer which is arranged to cover the patterned layer to be plated and is in contact with the substrate, a metal layer which is arranged to cover the copper plating layer and contains a metal that is electrochemically nobler than copper, a nitrogen-containing compound layer which is arranged to cover the metal layer that is electrochemically nobler than copper, and a protective layer which is arranged to cover the nitrogen-containing compound layer.

Abstract: A clip for a semiconductor package and a semiconductor having a clip is disclosed. In one example, the clip includes a first planar portion, a plurality of first pillars, and a plurality of first solder balls. Each first pillar of the plurality of first pillars is coupled to the first planar portion. Each first solder ball of the plurality of first solder balls is coupled to a corresponding first pillar of the plurality of first pillars.

Abstract: A semiconductor device of the embodiment includes first and second conductive layer; a silicon nitride layer between the first conductive layer and the second conductive layer; a silicon oxide layer between the silicon nitride layer and the second conductive layer; a silicon oxynitride layer between the silicon oxide layer and the second conductive layer; and a third conductive layer between the first conductive layer and the second conductive layer, the third conductive layer electrically connected to the first and second conductive layer, a first tilt angle of a plane where the third conductive layer is in contact with the silicon oxynitride layer with respect to an interface between the silicon nitride layer and the silicon oxide layer is smaller than a second tilt angle of a plane where the third conductive layer is in contact with the silicon oxide layer with respect to the interface.

Abstract: A semiconductor device package includes a first carrier, a first electronic component, a second electronic component, a second carrier and an electrical connection structure. The first carrier has a first surface and a second surface opposite to the first surface. The first electronic component is disposed on the first surface of the first carrier. The second electronic component is disposed on the second surface of the first carrier. The second carrier has a first surface facing the second surface of the first carrier and a second surface opposite to the first surface. The electrical connection structure is electrically connecting the first carrier with the second carrier.

Abstract: A method for manufacturing a radiation-emitting semiconductor device and radiation-emitting semiconductor device are disclosed. In an embodiment a method includes providing a radiation-emitting semiconductor chip having a first main surface including a radiation exit surface of the semiconductor chip, applying a metallic seed layer to a second main surface of the semiconductor chip opposite to the first main surface, galvanically depositing a first metallic layer on the seed layer for forming a first electrical contact point and a second electrical contact point, galvanically depositing a second metallic layer on the first metallic layer for forming the first electrical contact point and the second electrical contact point, wherein a material of the first metallic layer and a material of the second metallic layer are different, and applying a casting compound between the contact points.

Abstract: A semiconductor device and a semiconductor package, the device including a pad interconnection structure that penetrates a first buffer dielectric layer and a second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin, the pad interconnection structure includes a central part, a first intermediate part surrounding the central part; a second intermediate part surrounding the first intermediate part, and an outer part surrounding the second intermediate part, a grain size of the outer part is less than a grain size of the second intermediate part, the grain size of the second intermediate part is less than a grain size of the first intermediate part, and the grain size of the first intermediate part is less than a grain size of the central part.