Abstract: A display panel is provided. The display panel includes a driving backplane with a connecting electrode, an insulating layer arranged on the connecting electrode, and a light-emitting unit arranged on the driving backplane. The insulating layer includes an opening exposing part of a surface of the connecting electrode. The light-emitting unit is electrically connected with a bump electrode, and the bump electrode is electrically connected with the connecting electrode through the opening. The opening has a ridge and furrow profile, which can increase an area of a sidewall of the opening, such that a contact area between the bump electrode and the sidewall is increased to prevent peeling or cracking between the films.

Abstract: A method of manufacturing a semiconductor device includes forming a polymer mixture over a substrate, curing the polymer mixture to form a polymer material, and patterning the polymer material. The polymer mixture includes a polymer precursor, a photosensitizer, a cross-linker, and a solvent. The polymer precursor may be a polyamic acid ester. The cross-linker may be tetraethylene glycol dimethacrylate. The photosensitizer includes 4-phenyl-2-(piperazin-1-yl)thiazole. The mixture may further include an additive.

Abstract: In an embodiment, a method includes: dispensing a first dielectric layer around and on a first metallization pattern, the first dielectric layer including a photoinsensitive molding compound; planarizing the first dielectric layer such that surfaces of the first dielectric layer and the first metallization pattern are planar; forming a second metallization pattern on the first dielectric layer and the first metallization pattern; dispensing a second dielectric layer around the second metallization pattern and on the first dielectric layer, the second dielectric layer including a photosensitive molding compound; patterning the second dielectric layer with openings exposing portions of the second metallization pattern; and forming a third metallization pattern on the second dielectric layer and in the openings extending through the second dielectric layer, the third metallization pattern coupled to the portions of the second metallization pattern exposed by the openings.

Abstract: The subject application relates to reinforced semiconductor device packaging and associated systems and methods. The device generally includes a substrate and one or more integrated circuit dies electrically coupled to the substrate with wire bonds. The device includes an encapsulant enclosing the one or more dies and the wire bonds. The package can include a reinforcing layer positioned on one or more surfaces of the encapsulant, a reinforcing wire extending through the encapsulant, or entrained reinforcing fiber portions positioned throughout the encapsulant. The reinforcing layer can be textile woven from synthetic or natural fibers, such as aramid, carbon, or glass. The package can be formed by disposing a reinforcing textile layer in a mold, placing a die and substrate in the mold with a liquid encapsulant, and hardening the liquid encapsulant to adhere the reinforcing textile layer, the encapsulant, the die, and the substrate together.

Abstract: A first sealing composition includes an epoxy resin, a curing agent, an inorganic filler, and an unbaked hydrotalcite compound having a mole ratio of Mg ion to Al ion (Mg/Al) of 2.4 or more. A second sealing composition includes an epoxy resin, a curing agent, a hydrotalcite compound represented by Formula (1): Mg1-xAlx(OH)2(CO3)x/2·mH2O, in which each of x and m independently represents a positive number, and a magnesium-containing compound that is different from the hydrotalcite compound. A third sealing composition includes an epoxy resin, a curing agent, a hydrotalcite compound represented by Formula (I), and a magnesium oxide, and a content of the magnesium oxide is from 1 part by mass to 50 parts by mass parts with respect to 100 mass parts of the epoxy resin.

Abstract: An epoxy composition, a composite thereof, and an article including the same, in which the reactivity of the epoxy resin having an alkoxysilyl group is improved by a specific acrylic-based polymer resin, are provided. According to the present disclosure, an epoxy composition comprising an epoxy resin having an alkoxysilyl group, an acrylic-based polymer resin, and an inorganic filler, a composite thereof, and an article including the same are provided. The epoxy composition of the present disclosure shows an excellent thermal expansion property in a composite, and may be used in manufacture of semiconductor packaging and/or electrical and electronic components.

Abstract: A flip-chip package and a method for assembling a flip-chip package includes positioning the die on a substrate and introducing an underfill material into a space between the die and the substrate, where a portion of the underfill material extends beyond an edge of the die and forms a fillet that at least partially surrounds the die. The underfill material is cured, and a portion of the fillet is removed to reduce the area of the fillet.

Abstract: A semiconductor package includes a package substrate, at least one semiconductor chip mounted on the package substrate, a molding member on the package substrate to cover at least a portion of the semiconductor chip, and a mechanical reinforcing member provided around the semiconductor chip within the molding member and extending in at least one direction.

Abstract: A bulk-acoustic resonator module includes: a module substrate; a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; and a sealing portion sealing the bulk-acoustic resonator. The bulk-acoustic resonator includes a resonating portion disposed opposite to an upper surface of the module substrate. A space is disposed between the resonating portion and the upper surface of the module substrate.

Abstract: A semiconductor element is mounted on a die pad, and electrode pads arranged along the outer circumference of an upper surface of the semiconductor element are electrically connected to leads by wires, respectively. The semiconductor element has an element region having a high sensitivity with respect to stress, and an element region having a relatively low sensitivity with respect to stress. A low-stress resin film is provided on the element region having a high sensitivity with respect to stress. The semiconductor element, the low-stress resin film, the die pad, and the leads are covered with an encapsulating resin.

Abstract: A resin composition includes a vinyl group-containing polyphenylene ether resin, a polyolefin and a magnesium and aluminum combination ionic compound, wherein the magnesium and aluminum combination ionic compound has a thermal resistance of greater than or equal to 600° C. The resin composition may be used to make various articles, such as a prepreg, a resin film, a laminate or a printed circuit board, and at least one of the following improvements can be achieved, including glass transition temperature, copper foil peeling strength, thermal resistance and dissipation factor.

Abstract: An object of the present invention is to provide a semiconductor device in which peeling between a mold resin and a substrate is suppressed. A semiconductor device 1 includes a semiconductor chip 20 and a substrate 10 that are molded with a mold resin layer 40. The semiconductor device 1 includes a resin layer 50 having a thickness of 200 nm or less different from the mold resin layer 40 between the cured mold resin layer 40 and the substrate 10. The resin layer 50 present between the mold resin layer 40 and the substrate 10 is preferably present on a periphery of 30% or more of the chip when an entire peripheral length of the chip is 100%.

Abstract: A method for packaging a semiconductor device includes the steps of: disposing a wafer on a first carrier plate; attaching a second carrier plate to a side of the first carrier plate opposite to the wafer; disposing a chip unit on a side of the wafer opposite to the first carrier plate; and covering the wafer and the chip unit with an encapsulation layer. A semiconductor packaging structure is also disclosed.

Abstract: An epoxy resin composition includes: (A) an epoxy resin containing a compound represented by the following Formula (I); (B) a phenol resin containing a compound represented by the following Formula (II); and (C) a dihydroxynaphthalene compound containing a compound represented by the following Formula (III). In Formula (I), R represents a hydrogen atom, and n represents an integer from 0 to 10. In Formula (II), R1 represents a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, or an alkoxy group having 1 or 2 carbon atoms, and each R1 may be the same as or different from another R1. n represents an integer from 0 to 10. In Formula (III), R1 represents a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, or an alkoxy group having 1 or 2 carbon atoms.

Abstract: A semiconductor package includes a support member including a resin body having a first surface and a second surface opposing each other and having a cavity, and at least one passive component embedded in the resin body and having a connection terminal exposed from the first surface; a first connection member disposed on the first surface of the resin body, and having a first redistribution layer on the first insulating layer and connected to the connection terminal; a second connection member disposed on the first connection member and covering the cavity, and having a second redistribution layer on the second insulating layer and connected to the first redistribution layer; and a semiconductor chip disposed on the second connection member in the cavity.

Abstract: The present invention is a thermosetting epoxy resin sheet for encapsulating a semiconductor, characterized by being a sheet formed from a composition including: (A) a crystalline bisphenol A type epoxy resin and/or a crystalline bisphenol F type epoxy resin, (B) an epoxy resin that is non-fluid at 25° C. other than the component (A), (C) a phenol compound having two or more phenolic hydroxy groups in a molecule thereof, (D) an inorganic filler, and (E) an urea-based curing accelerator. The present invention provides a thermosetting epoxy resin sheet for encapsulating a semiconductor that has excellent flexibility and good handleability in an uncured state, together with excellent storage stability and formability.

Abstract: A DC-DC converter and corresponding method for transitioning between a discontinuous conduction mode, DCM, and a continuous conduction mode, CCM, wherein the DC-DC converter is configured to power a signal processing system within an integrated circuit, is provided. The method comprises receiving input data, wherein the input data is for inputting into the signal processing system; determining an amplitude of the input data; and transitioning between DCM and CCM based on the amplitude of the input data. A DC-DC converter and respective method for transitioning from CCM to DCM comprising determining an estimated current representative of an inductor current through an inductor of the DC-DC converter; and transitioning from CCM to DCM based on the estimated current, is provided.

Abstract: An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150° C. before heating treatment of 50 Pa·s or more and 3,000 Pa·s or less, a viscosity change rate of 500% or less, at 150° C. as a result of the heating treatment, and a reaction rate represented by {(Qt?Qh)/Qt}×100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from ?50° C. to 300° C. and Qh is a total calorific value in a process of temperature rise from ?50° C. to 300° C. after heating at 175° C. for 2 hours in a DSC measurement.

Abstract: A phosphonium compound, an epoxy resin composition, a method of preparing a phosphonium compound, and a semiconductor device encapsulated with the epoxy resin composition, the compound being represented by Formula 1:

Abstract: An epoxy resin composition for encapsulation of a semiconductor device and a semiconductor device encapsulated with the epoxy resin composition, the composition including an epoxy resin; a curing agent; an inorganic filler; a curing catalyst; and a compound containing at least one hydroxyl group, wherein the curing catalyst includes a phosphonium compound represented by Formula 4:

Abstract: The invention relates to polymer compositions containing inorganic or organic particles which either have been surface-treated before the production of the compositions or are dispersed by special polyether-modified siloxanes through the production of the compositions.

Abstract: A thermosetting resin composition has particular applications in three dimensional (3-D) printing. The thermosetting resin composition exhibits high performance and is characterized by a high temperature two stage cure resin composition. The thermosetting resin composition comprises cyanate esters and other high temperature resins, photo curable monomers, photo initiator, metal catalyst or ionic liquid catalyst. The thermosetting resin composition cures at room temperature to form 3-D objects and upon further post cure these objects exhibit high temperature properties enabling use at temperatures exceeding 150 C.

Abstract: A method of producing a multiplicity of surface-mountable carrier devices includes: A) providing a carrier plate having a first main face and a second main face located opposite the first main face, B) applying an electrically conductive layer to the first main face, C) applying a solder resist mask to a side of the electrically conductive layer remote from the carrier plate, wherein a multiplicity of adjoining regions are formed on the electrically conductive layer by the solder resist mask, D) applying a solder material to the solder resist mask and the electrically conductive layer, wherein the solder resist mask and the electrically conductive layer are at least partially covered by the solder material, and E) singulating the carrier plate and the electrically conductive layer along and through the solder resist mask and the solder material, wherein the solder material remains at least partially on the solder resist mask.

Abstract: A liquid resin composition includes a liquid epoxy resin, a liquid curing agent, a curing accelerator and a ceramic filler. The liquid epoxy resin contains a first epoxy resin having a polyalkylene glycol framework. The liquid curing agent has a plurality of phenolic hydroxy groups per molecule. A content of the first epoxy resin in the liquid epoxy resin is in a range from 30% to 70% by mass, inclusive. The ceramic filler has an average particle diameter of 50 ?m or less, and a content of the ceramic filler in the liquid resin composition is in a range from 50% to 90% by mass, inclusive. The liquid resin composition has a viscosity of 100 Pa·s or less at 25° C.

Abstract: A halogen-free resin composition includes (A) 100 parts by weight of epoxy resin; (B) 10 to 100 parts by weight of benzoxazine resin; (C) 5 to 50 parts by weight of diallylbisphenol A resin; and (D) 0.05 to 20 parts by weight of an amine curing agent. The halogen-free resin composition includes specific ingredients and proportions thereof to attain low dielectric constant (Dk), low dissipation factor (Df), high heat resistance, and high flame retardation. The halogen-free resin composition is suitable for producing a prepreg or a resin film and thus applicable to copper clad laminates and printed circuit boards.

Abstract: A packaged electronic device including an electronic device, a conductive structure, and an encapsulant. The encapsulant has chlorides and a negatively-charged corrosion inhibitor for preventing corrosion of the conductive structure.

Abstract: Provided is a battery which has less tendency to experience delamination or loss of short circuit prevention layer and/or active material layer during manufacture and use. A battery comprising a laminated electrode assembly in which a positive electrode, a negative electrode, and a separator are laminated together; wherein an alumina-containing layer containing ?-alumina particles is formed on at least one species selected from among the group consisting of the positive electrode, the negative electrode, and the separator. The fact that alumina-containing layer(s) is or are made to contain ?-alumina particles makes it possible to obtain high bond strength between alumina-containing layer(s) and electrode(s) comprising metal(s), current collector(s) and/or active material(s) making up electrode(s), and/or separator(s).

Abstract: Problems, such as increase in the electrical resistance in the junction(s) of the terminal(s) of a power semiconductor element and the electrode(s) of a peripheral circuit and decrease in the dielectric strength voltage between adjacent junctions, resulting from the insufficient alignment of the power semiconductor element terminal(s) and the the peripheral circuit electrode(s), in the high-capacity module which is intended to attain reduction in size and weight, reduction in surge, and reduction in loss by lamination of the peripheral circuit onto the power circuit, should be reduced. By preparing level difference(s) in the surface of the peripheral circuit board to more accurately align the peripheral circuit board electrode(s) and the power semiconductor element terminal(s) by contact of the level difference(s) and the lateral face(s) of the power semiconductor element at the time of lamination of the power circuit and the peripheral circuit, the above-mentioned problems can be reduced.

Abstract: Set of compositions for preparing system-in-package type semiconductor device. The composition set consists of underfill composition for preparing underfill part and encapsulation resin composition for preparing resin encapsulation part. 1) A cured product of the underfill composition has a glass transition temperature, Tg, ?100° C. and is the same with or differs from a Tg of a cured product of the encapsulation resin composition by ?20° C. 2) Total linear expansion coefficient of the cured product of the underfill composition at a temperature not higher than (Tg?30)° C. and a linear expansion coefficient of the cured product of the encapsulation resin composition at a temperature not higher than (Tg?30)° C. is ?42 ppm/° C. 3) A ratio of the linear expansion coefficient of the cured product of the encapsulation resin composition to the linear expansion coefficient of the cured product of the underfill composition ranges from 0.3 to 1.0.

Abstract: To provide a resin composition for sealing an optical semiconductor, which is a raw material for a sealing resin layer having good curability and excellent storage stability; preferably a raw material for a sealing resin layer further having excellent weather resistance. The surface sealant for an optical semiconductor of Embodiment 1 according to the present invention contains epoxy resin (a) having two or more epoxy groups in a molecule, and metal complex (b1) which contains at least one metal ion selected from the group consisting of Zn, Bi, Ca, Al, Cd, La and Zr, a tertiary amine capable of forming a complex with the metal ion and having no N—H bond and an anionic ligand having a molecular weight of 17 to 200, in which the surface sealant has a viscosity of 10 to 10000 mPa·s, as measured by E-type viscometer at 25° C. and 1.0 rpm.

Abstract: The present invention provides an epoxy resin composition for sealing that demonstrates favorable adhesion to a copper lead frame in which oxidation has progressed and has superior mold release and continuous moldability. The epoxy resin composition for sealing includes (A) an epoxy resin, (B) a phenolic resin-based curing agent, (C) an inorganic filler, and (D) a curing accelerator. The curing accelerator (D) has an average particle diameter of 10 ?m or less, and the ratio of particles having a particle diameter in excess of 20 ?m is 1% by weight or less. Also, the curing accelerator (D) includes at least one type of curing accelerator selected from the group consisting of a phosphobetaine compound having a specific structure; adduct of a phosphine compound having a specific structure, and quinone compound; and an adduct of a phosphonium compound having a specific structure, and a silane compound.

Abstract: The present invention provides a resin composition for encapsulating electronic components that contains a phenol resin curing agent and an epoxy resin, in which either the phenol resin curing agent or the epoxy resin has a biphenyl structure; a resin composition for encapsulating electronic components that contains a phenol resin curing agent and an epoxy resin, in which a glass transition temperature of a cured material is equal to or higher than 200° C., and a weight reduction rate of the cured material is equal to or lower than 0.3%; and an electronic device that includes an electronic component encapsulated with the resin composition.

Abstract: The present invention is related to a method for producing a resin compact containing an epoxy resin, a curing agent, a curing accelerator and an inorganic filler. The method includes a kneading and crushing process for preparing a first powder material obtained by mixing, heat-melting, kneading and crushing a first component containing the epoxy resin and the curing agent and the inorganic filler, but not containing the curing accelerator; a pulverizing process for preparing a second powder material obtained by pulverizing a second component containing the curing accelerator; a mixing process for preparing a resin composition by dispersing and mixing the first powder material and the second powder material; and a molding process for obtaining the resin compact by compression-molding the resin composition. This makes it possible to obtain a resin compact (particularly, a resin compact for encapsulation) having superior long term storage stability at room temperature, good curable property and fluidity.

Abstract: An adhesive for a semiconductor, containing an epoxy resin, a curing agent, and a fluxing agent comprising a compound having a group represented by the following formula (1-1) or (1-2): wherein R1 represents an electron-donating group; and a plurality of R1 may be identical or different from each other.

Abstract: The present invention provides an encapsulant with a base for use in semiconductor encapsulation, for collectively encapsulating a device mounting surface of a substrate on which semiconductor devices are mounted, or a device forming surface of a wafer on which semiconductor devices are formed, the encapsulant comprising the base, an encapsulating resin layer composed of an uncured or semi-cured thermosetting resin formed on one surface of the base, and a surface resin layer formed on the other surface of the base. The encapsulant enables a semiconductor apparatus having a good appearance and laser marking property to be manufactured.

Abstract: An epoxy resin composition for encapsulating a semiconductor device includes a curing agent, a curing accelerator, inorganic fillers, and an epoxy resin, the epoxy resin including a first resin represented by Formula 1: wherein R1 and R2 are each independently hydrogen or a C1 to C4 linear or branched alkyl group, and n is a value from 1 to 9 on average.

Abstract: A thermosetting encapsulation adhesive sheet which is used for encapsulating a chip type device (1) having connection electrodes (bumps) (3) and mounted on a wiring circuit board (2). The thermosetting encapsulation adhesive sheet is composed of an epoxy resin composition having a viscosity of 5×104 to 5×106 Pa·s as measured at a temperature of 80 to 120° C. before thermosetting thereof. The thermosetting encapsulation adhesive sheet makes it possible to conveniently encapsulate a hollow device with an improved yield.

Abstract: An epoxy resin composition for encapsulating a semiconductor chip according to this invention comprises (A) a crystalline epoxy resin, (B) a phenol resin represented by general formula (1): wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms and two or more R1s or two or more R2s are the same or different; a is integer of 0 to 4; b is integer of 0 to 4; c is integer of 0 to 3; and n is average and is number of 0 to 10, (C) a (co)polymer containing butadiene-derived structural unit or its derivative, and (D) an inorganic filler in the amount of 80 wt % to 95 wt % both inclusive in the total epoxy resin composition.

Abstract: An adhesive composition useful in bonding a protective glass with a silicon substrate of a semiconductor device contains (A) an epoxy-containing high-molecular compound and (B) a solvent. The compound (A) has a weight average molecular weight of 3,000 to 500,000 and repeating units represented by the following formula (1): wherein R1 to R4 each represent a monovalent hydrocarbon group, m is 1 to 100, a, b, c and d indicate ratios of respective repeating units based on a number of all repeating units and each stand for 0 or a positive number with a proviso that c and d are not 0 at the same time and 0<(c+d)/(a+b+c+d)?1.0 is satisfied, and X and Y are phenolic hydroxyl-containing, divalent aromatic groups.

Abstract: Disclosed is a resin composition for encapsulating a semiconductor including a phenol resin (A) having one or more components containing a component (A1) composed of a polymer having a first structural unit and a second structural unit, an epoxy resin (B), and an inorganic filler (C). Also disclosed is a semiconductor device obtained by encapsulating a semiconductor element with a cured product of the resin composition for encapsulating a semiconductor.

Abstract: Described herein is a sealant laminated composite for collectively sealing a semiconductor device's mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor device's forming surface of a wafer on which semiconductor devices are formed. The composite can include a support wafer and an uncured resin layer constituted of an uncured thermosetting resin formed on one side of the support wafer. In certain aspects, the sealant laminated composite is very versatile, even when a large diameter or thin substrate or wafer is sealed.

Abstract: A mold compound is provided for encapsulating a semiconductor device (101). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.

Abstract: Thermosetting resin compositions useful for liquid compression molding encapsulation of a silicon wafer are provided. The so-encapsulated silicon wafers offer improved resistance to warpage, compared to unencapsulated wafers or wafers encapsulated with known encapsulation materials.

Abstract: Panelized packaging is described in which a plurality of die units are placed on a dielectric film. The dielectric film is then cured to lock the plurality of die unit in place, which are then encapsulated. The cured dielectric film is then patterned utilizing a mask-less pattering technique.

Abstract: An optical semiconductor sealing resin composition includes a rubber-particle-dispersed epoxy resin (A) containing an alicyclic epoxy resin and, dispersed therein, rubber particles, in which the rubber particles comprise a polymer including one or more (meth)acrylic esters as essential monomeric components and have a hydroxyl group and/or a carboxyl group in a surface layer thereof as a functional group capable of reacting with the alicyclic epoxy resin, the rubber particles have an average particle diameter of 10 nm to 500 nm and a maximum particle diameter of 50 nm to 1000 nm, and the difference in refractive index between the rubber particles and a cured article obtained from the optical semiconductor sealing resin composition is within ±0.02. The optical semiconductor sealing resin composition can give a cured article which exhibits excellent cracking resistance while maintaining satisfactory thermal stability and high transparency.

Abstract: A sealing film which includes a resin layer having a flow within the range of 150 to 1800 ?m at 80° C., or having a resin layer with a viscosity within the range of 10000 to 100000 Pa·s in a B-stage state at 50 to 100° C. in thermosetting viscoelasticity measurement, and containing: (A) both (a1) a high-molecular-weight component including crosslinking functional groups and having a weight-average molecular weight of 100,000 or more and a Tg within the range of ?50 to 50° C., and (a2) a thermosetting component including an epoxy resin as a main component, (B) a filler having an average particle size within the range of 1 to 30 ?m, and (C) a colorant, as well as a manufacturing method thereof and a semiconductor device using the same.

Abstract: The present invention relates to a resin paste composition including an organic compound, and a granular aluminum powder having an average particle diameter of from 2 to 10 ?m and a flake-shaped silver powder having an average particle diameter of from 1 to 5 ?m which are uniformly dispersed in the organic compound, and a semiconductor device manufactured by bonding a semiconductor element onto a supporting member through the resin paste composition and then encapsulating the resulting bonded product. According to the present invention, it is possible to provide a resin paste composition used for bonding an element such as semiconductor chips onto a lead frame which is excellent in not only electrical conductivity and bonding property but also working efficiency without using a large amount of rare and expensive silver, and a semiconductor device having a high productivity and a high reliability.

Abstract: The invention provides an encapsulant equipped with the supporting substrate which is an encapsulant for collectively encapsulating a semiconductor devices mounting surface of a substrate having semiconductor devices mounting thereon or a semiconductor devices forming surface of a wafer having semiconductor devices forming thereon, and the encapsulant equipped with the supporting substrate comprises a supporting substrate having a difference of a linear expansion coefficient from that of the substrate or the wafer of 5 ppm or less and a thermosetting resin layer being laminated, wherein the thermosetting resin layer has a shape having a height difference to a thickness direction.

Abstract: The present invention has a purpose of providing an epoxy composition for encapsulating an optical semiconductor element which composition provides a cured product having a low gas permeability and excellent curability in a form of a thin film together with good light transmission and crack resistance. The present invention provides a composition comprising (A) a silicone-modified epoxy compound represented by the formula (1), (B) a curing agent and (C) a polyhydric alcohol. The present invention further provides a composition comprising a composition prepared by reacting (A) the silicone-modified epoxy compound, (B) the curing agent and (C) the polyhydric alcohol and (D) a curing catalyst, and a cured product thereof.

Abstract: According to example embodiments, a wafer level mold may be formed by a method including attaching a substrate to a lower side of a wafer on which a semiconductor chip is arranged, applying molding liquid to an upper and at least one lateral side of the semiconductor chip and an upper side of the wafer where the semiconductor chip is not arranged, loading a fiber onto the applied liquid, forming a mold layer by compression-molding and curing the liquid loaded with the fiber, and separating the substrate from the wafer.