Abstract: A video signal processing apparatus and a design method therefor are provided, and more particularly, a design method for a video signal processing integrated circuit (IC), in which to solve the shortage of pin ports caused by designing a video signal processor in a single IC, a vertical synchronization signal is output and a quasi synchronization signal is input through a single pin port, and an IC and a video signal processing apparatus thereby are provided. According to the design method, by designing a vertical synchronization dividing circuit inside an IC without increasing the number of pins in a video signal processing IC, the present invention can reduce the number of components, material costs, and save the PCB space. In addition, by integrating the vertical synchronization dividing circuit inside an IC, the component difference of a discrete device can be reduced, which enhances IC performance.

Abstract: A mask blank has a plurality of pattern formation regions in which mask circuit patterns are to be formed, and a supporting region in which any mask circuit pattern is not to be formed. The supporting region is provided for holding the plurality of pattern formation regions while separating the plurality of pattern formation regions from each other. The supporting region has first and second alignment marks. Exposure of a mask made from the mask blank for forming mask circuit patterns thereon is performed on the basis of the first alignment marks, and exposure of a substrate for forming circuit patterns thereon is performed on the basis of the second alignment marks. With this configuration, a mask used for charged particle beam reduction-and-division transfer exposure can be highly accurately produced at a low cost, and exposure of a substrate can be highly accurately performed by using the mask.

Abstract: A singulation method used in leadless packaging process is disclosed. An array of molded products on an upper surface of a lead frame is utilized in the singulation method. The lead frame has a plurality of dambars between the molded products. The lower surface of the lead frame is attached with a tape. Each of the molded products includes a semiconductor chip encapsulated in a package body and electrically coupled to the upper surface of the lead frame. The singulation method is accomplished by etching the upper surface of the lead frame with the package bodies as mask until each dambar is etched away.

Abstract: A method of fabricating electronic parts includes the steps of: mounting electronic elements in regular cavities that are two-dimensionally arranged on a baseboard on which dummy cavities are provided so as to surround the regular cavities, and covering a top of the baseboard with a resin sheet.

Abstract: Systems and methodologies are provided for of enabling a polymer memory cell to exhibit variable retention times for stored data therein. Such setting of retention time can depend upon a programming mode and/or type of material employed in the polymer memory cell. Short retention times can be obtained by programming the polymer memory cell via a low current or a low electrical field. Similarly, long retention times can be obtained by employing a high current or electrical field to program the polymer memory cell.

Abstract: A structure for conducting carriers and method for forming is described incorporating a single crystal substrate of Si or SiGe having an upper surface in the <110> and a psuedomorphic or epitaxial layer of SiGe having a concentration of Ge different than the substrate whereby the psedomorphic layer is under strain. A method for forming semiconductor epitaxial layers is described incorporating the step of forming a psuedomorphic or epitaxial layer in a rapid thermal chemical vapor deposition (RTCVD) tool by increasing the temperature in the tool to about 600° C. and introducing both a Si containing gas and a Ge containing gas.

Abstract: A process for producing a nanoelement arrangement and to a nanoelement arrangement. A first nanoelement is at least partially covered with catalyst material for catalyzing the growth of nanoelements. Furthermore, at least one second nanoelement is grown on the catalyst material. Also, a nanoelement arrangement having a first nanoelement on which at least one predetermined region is covered with catalyst material for catalyzing the growth of nanoelements, and at least one second nanoelement grown on the catalyst material.

Abstract: The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.

Abstract: In an embodiment, a trench is formed above a via from a photo resist (PR) trench pattern in a dielectric layer. The trench is defined by two sidewall portions and base portions. The base portions of the sidewalls are locally treated by a post treatment using the PR trench pattern as mask to enhance mechanical strength of portions of the dielectric layer underneath the base portions. Seed and barrier layers are deposited on the trench and the via. The trench and via are filled with a metal layer. In another embodiment, a trench is formed from a PR trench pattern in a dielectric layer. A pillar PR is deposited and etched to define a pillar opening having a pillar surface. The pillar opening is locally treated on the pillar surface by a post treatment to enhance mechanical strength of portion of the dielectric layer underneath the pillar surface.

Abstract: An apparatus for brushing a surface of a substrate is provided. The apparatus includes a brush for scrubbing the surface of the substrate, a head for holding the brush, and an arm. The arm is configured to hold the head about a connection point. The arm is connected to an oscillating mechanism configured to cause the head to oscillate at an angle of rotation about the connection point.

Abstract: Integrated circuit antifuse circuitry is provided. A metal-oxide-semiconductor (MOS) transistor serves as an electrically-programmable antifuse. The antifuse transistor has source, drain, gate, and substrate terminals. The gate has an associated gate oxide. In its unprogrammed state, the gate oxide is intact and the antifuse has a relatively high resistance. During programming, the gate oxide breaks down, so in its programmed state the antifuse transistor has a relatively low resistance. The antifuse transistor can be programmed by injecting hot carriers into the substrate of the device in the vicinity of the drain. Because there are more hot carriers at the drain than at the substrate, the gate oxide is stressed asymmetrically, which enhances programming efficiency. Feedback can be used to assist in turning the antifuse transistor on to inject the hot carriers.

Abstract: A semiconductor chip comprises a semiconductor substrate having integrated circuits formed on a cell region and a peripheral circuit region adjacent to each other. A bond pad-wiring pattern is formed on the semiconductor substrate. A pad-rearrangement pattern is electrically connected to the bond pad-wiring pattern. The pad-rearrangement pattern includes a bond pad disposed over at least a part of the cell region. The bond pad-wiring pattern is formed substantially in a center region of the semiconductor substrate. Thus, with the embodiments of the present invention, the overall chip size can thereby be substantially reduced and an MCP can be fabricated without the problems mentioned above.

Abstract: Disclosed is a semiconductor fin construction useful in FinFET devices that incorporates an upper region and a lower region with wherein the upper region is formed with substantially vertical sidewalls and the lower region is formed with inclined sidewalls to produce a wider base portion. The disclosed semiconductor fin construction will also typically include a horizontal step region at the interface between the upper region and the lower region. Also disclosed are a series of methods of manufacturing semiconductor devices incorporating semiconductor fins having this dual construction and incorporating various combinations of insulating materials such as silicon dioxide and/or silicon nitride for forming shallow trench isolation (STI) structures between adjacent semiconductor fins.

Abstract: A package includes a first and a second wafer stored therein in a stacked configuration. The first wafer has interconnection conductor material portions extending from a first surface thereof. The interconnection conductor material portions have a maximum height. An interleaf member is located between the first and second wafers. A first recessed portion is formed in the interleaf member, and it has an outer perimeter shape corresponding to an outer perimeter shape of the first wafer. The first recessed portion has a first depth from a top surface of the interleaf member. A second recessed portion is formed in the interleaf member and located at least partially within the first recessed portion, and it has a bottom surface at a second depth from the top surface. The second depth is greater than the first depth. The second depth minus the first depth is greater than the maximum height.

Abstract: Devices and methods of fabrication thereof are disclosed. A representative device includes a complaint wafer-level package having one or more lead packages. A representative lead package includes a substrate having a plurality of die pads disposed thereon and a plurality of leads attached to the plurality of die pads. In addition, the lead package includes a plurality of pillars made of a low modulus material. Each pillar is disposed between the substrate and at least one lead, and each lead is disposed upon one of the pillars that compliantly support the lead.

Abstract: The present invention provides an apparatus comprising a device and a mechanism for heat transfer comprising a hydrofluoroether heat-transfer fluid wherein the heat transfer fluid is represented by the following structure: Rf—O—Rh—O—Rf? wherein: O is oxygen; Rf and Rf? are, independently, a fluoroaliphatic group, wherein each Rf and Rf? contain 1 hydrogen atom; Rh is independently a linear, branched or cyclic alkylene group having from 2 to about 8 carbon atoms and at least 4 hydrogen atoms, and wherein the hydrofluoroether compound is free of —O—CH2—O—. Another embodiment of the present invention is a method therefor.

Abstract: A mask blank has a plurality of pattern formation regions in which mask circuit patterns are to be formed, and a supporting region in which any mask circuit pattern is not to be formed. The supporting region is provided for holding the plurality of pattern formation regions while separating the plurality of pattern formation regions from each other. The supporting region has first and second alignment marks. Exposure of a mask made from the mask blank for forming mask circuit patterns thereon is performed on the basis of the first alignment marks, and exposure of a substrate for forming circuit patterns thereon is performed on the basis of the second alignment marks. With this configuration, a mask used for charged particle beam reduction-and-division transfer exposure can be highly accurately produced at a low cost, and exposure of a substrate can be highly accurately performed by using the mask.

Abstract: A method is described for repairing failure points, regions or locations in an electronic device to have a perfect function when a semiconductor device including an LCD of other electronic device has defects. Described is a method of transferring a single or multi-layer thin film piece into a recess with the physical properties of the thin film piece unchanged. An electronic device is described incorporating a substrate; and a plurality of thin films laminated on the substrate and part of the thin films are formed on a predetermined circuit pattern, wherein a transfer film for repairing a defect is fitted into a recess where the low layers of the thin films are exposed by removing part of a single or multi-layer thin films covering a defective portion included on the thin films and its surrounding portion.

Abstract: An adhesive sheet for producing a semiconductor device, which includes a base layer and an adhesive layer and is used in the process for producing the semiconductor device including the step of sealing a semiconductor element connected to an electric conductor with a sealing resin on the adhesive layer, wherein the adhesive layer of the adhesive sheet includes a rubber component and an epoxy resin component and the ratio of the rubber component in organic materials in the adhesive layer is from 5 to 40% by weight. According to this adhesive sheet, pollution is not caused by silicon components, a sufficient elastic modulus can be kept even at high temperature, and a problem that paste remains is not easily caused.

Abstract: Apparatus and methods for performing quantum computations are disclosed. Such apparatus and methods may include identifying a first quantum state of a lattice having a system of quasi-particles disposed thereon, moving the quasi-particles within the lattice according to at least one predefined rule, identifying a second quantum state of the lattice after the quasi-particles have been moved, and determining a computational result based on the second quantum state of the lattice.

Abstract: A method and system for universal packaging in conjunction with an automated in-line back-end IC manufacturing process. In one method embodiment, the present invention processes a die-strip through a number of integrated in-line processes that function independently of the die size of the die-strip. A control computer maintains a die-strip map database recording the die size of the die-strip. In-line molding and solder ball attachment processes are then performed and function independently of the die size of the die-strip. Processes that are independent of die size provide a universal packaging manufacturing solution. The present invention then accesses the database to determine the die size for cutting the die-strip based on specifications maintained by the electronic die-strip map database. Sorting, testing and finish assembly processes are then performed.

Abstract: Disclosed herein is a dummy pattern structure of a semiconductor device. The dummy pattern structure may include daughter dummy patterns respectively formed at places corresponding to vertexes of polygons in regions where metal wirings are not formed in an interlayer insulating film where metal wirings are formed, thus being arranged in the whole region while constituting a polygon shape, and mother dummy patterns respectively formed at places corresponding to the middles of the polygon, which is formed by the daughter dummy patterns. Generation of metal residues in a region where metal wirings are not formed when the metal wirings are formed by means of a damascene process are prevented. Also, a delamination phenomenon that interlayer insulating films are fallen apart can be prevented.

Abstract: Semiconductor fabrication methods and structures, devices and integrated circuits characterized by enhanced operating performance. The structures generally include first and second source/drain regions formed in a body of a semiconductor material and a channel region defined in the body between the first and second source/drain regions. Disposed in at least one of the first and second source/drain regions are a plurality of plugs each formed from a volume-expanded material that transfers compressive stress to the channel region. The compressively strained channel region may be useful, for example, for improving the operating performance of p-channel field effect transistors (PFET's).

Abstract: A first wiring part in a first wiring layer is a starting terminal that is connected to a ground potential. The first wiring part and a second wiring part in a second wiring layer are connected by a first connecting part. The second wiring part and a third wiring part in a third wiring layer are connected by a second connecting part. A fourth wiring part continuously connected with the third wiring part and a fifth wiring part in the second wiring layer are connected by a third connecting part. The fifth wiring part and a sixth wiring part in the first wiring layer are connected by a fourth connecting part. A conducting path that is continuously connected from the starting terminal to an output end is formed by connecting a mound-shaped conducting path thus formed.

Abstract: A liquid epoxy resin composition is provided comprising (A) a liquid epoxy resin, (B) an optional curing agent, (C) a curing accelerator, (D) an inorganic filler, and (E) acrylic submicron particles of core-shell structure formed of polymers or copolymers comprising an alkyl acrylate and/or alkyl methacrylate as a monomeric component, the core having a Tg of up to ?10° C., the shell having a Tg of 80-150° C. The composition is adherent to surfaces of silicon chips, especially polyimide resins and nitride film and useful as sealant for flip chip type semiconductor devices.

Abstract: A semiconductor wafer is disclosed. The semiconductor wafer includes a wafer body. The wafer body includes an electrostatic force generating arrangement for assisting in an alignment of the wafer body with respect to another wafer body.

Abstract: A hybrid electronic circuit package (102, FIG. 1) includes non-insertable conductive features (110) and insertable conductive features (112) at a surface of the package. A hybrid receptacle (120), such as a socket, for example, includes non-insertable contacts (124) and insertable contacts (126), which are positioned in a complementary manner with the non-insertable and insertable features of the package. A vertical securement device (132, 134, 136) applies a vertical compressive force to the package (102) to compress the non-insertable features (110) against the non-insertable contacts (124). Further, a normal force securement device can be used to provide a sustained normal force to compress the insertable features and contacts together. In one embodiment, the non-insertable features are land grid array lands and the insertable features are low insertion force features.

Abstract: A chip structure can reduce the phenomenon of overcrowding current at the conventional circular opening of the passivation layer and further causing electromigration when the current flows to the bonding pad via the transmission line. The improved structure for the side profile of the opening of the passivation layer is about a circular profile, but the portion near to the transmission line is a straight line or a curving line. When the current flows through this opening, the current density can be uniformly distributed along the straight line or the curving line, and whereby the phenomenon of overcrowding current can be reduced.

Abstract: The present invention provides a prepreg and a circuit board that can achieve, e.g., low interstitial via connection resistance, excellent connection stability, and high durability, regardless of materials, physical properties, and a combination of the materials of an insulating layer. The present invention also provides a method for manufacturing the prepreg and the circuit board. The prepreg of the present invention includes a laminate including at least one first layer and at least one second layer. The first layer is an insulating layer that includes a resin. The second layer has pores that connect an upper and a lower surface of the second layer, and the upper and the lower surface of the second layer differ from each other in at least one selected from open are ratio and average pore diameter. Using this prepreg makes it possible to provide a circuit board that is characterized, e.g., by low interstitial via connection resistance, excellent connection stability, and high durability.

Abstract: A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least one reducing agent. The reaction of the at least one metal salt with the at least one reducing agent simultaneously deposits metal and a dopant thereof. The oxidation barrier may be used to form conductive structures of semiconductor device structures, such as a capacitor electrode, or may be formed adjacent conductive or semiconductive structures of semiconductor device structures to prevent oxidation thereof. The oxidation barrier is particularly useful for preventing oxidation during the formation and annealing of a dielectric structure from a high dielectric constant material, such as Ta2O5 or BST.

Abstract: A thermal interposer is provided for attachment to the back surface of a semiconductor device so as to give a very low thermal resistance. In one preferred embodiment, the thermal interposer has two plates containing wick structures such as grooves. The thermal interposer is integrated with a semiconductor device so as to form a vapor chamber. In particular, the back surface of the semiconductor chip is in direct contact with the interior sealed volume of the vapor chamber, so as to greatly reduce the thermal resistance from the combination of the chip and the vapor chamber. Further, the upper plate is thermally coupled to a heat-sinking fixture such as a heat sink or a cold plate.

Abstract: A current reference, which may be fabricated independently, on a die, as part of an integrated circuit, or a system, or in various other forms, is disclosed. The current reference may include a voltage source having a substantially temperature stable output voltage, a first semiconductor device biased by the substantially temperature stable output voltage to provide a first output current, and a second semiconductor device providing a second output current, wherein a reference current is provided approximately equal to the difference between the first and second output currents.

Abstract: The invention is a method of fabricating electrically passive components or optical elements on top or underneath of an integrated circuit by using a porous substrate that is locally filled with electrically conducting, light emitting, insulating or optically diffracting materials. The invention is directed to a method of fabricating electrically passive components like inductors, capacitors, interconnects and resistors or optical elements like light emitters, waveguides, optical switches of filters on top or underneath of an integrated circuit by using porous material layer that is locally filled with electrically conducting, light emitting, insulating or optically diffracting materials. In the illustrated embodiment the fabrication of voluminous, solenoid-type inductive elements in a porous insulating material by standard back- and front-side-lithography and contacting these two layers by electroplating micro-vias through the pores is described.

Abstract: An alignment aid for semiconductor devices. The alignment aid includes an area having a high level of reflectivity and an adjacent area having a of low level of reflectivity. The area having a low level of reflectivity includes at least one layer of tiles located in an interconnect layer of a semiconductor device and located over active circuitry of the semiconductor device. In some examples, the spacings between the tiles in a scan direction of the alignment aid is less than the wavelength of a light (e.g. a laser light) used to scan the alignment aid. In other examples, the width of the tiles in a scan direction of the alignment aid is less than the wave length of a laser used to scan the alignment aid.

Abstract: An apparatus in which a device electrode pad in an electronic device and a connecting conductor pattern in a substrate are connected to each other through a plurality of wire thin lines which differ from one another in mechanical characteristic frequencies. Even if the frequency of vibration applied to the apparatus from the exterior coincides with the characteristic frequency of the given wire thin line so that the wire thin line is broken, it does not coincide with the characteristic frequency of the other wire thin line. Accordingly, no resonance phenomenon occurs in the other wire thin line, thereby reducing a probability that the wire thin line is broken.

Abstract: An array of conductive lines for MRAM circuits wherein at least one set of mutually parallel conductive traces is tilted with respect to being perpendicular with a corresponding set of mutually parallel conductive traces wherein individual conductive traces within the sets intersect adjacent individual MRAM cells and wherein the tilting of the at least one set of conductive traces acts to induce both a vertical and horizontal component of a magnetic field such that the net vector addition of magnetic fields induced by the sets of conductive traces is greater than the untilted or perpendicular configuration so as to induce a greater net magnetic field to effect more reliable switching of the underlying MRAM cells. The tilted array also enables reducing the current supplied by the conductive traces while maintaining a comparable net magnetic field to the untilted configuration.

Abstract: The actuator is used in a pickup device for a drive device of an optical disc. The actuator is positioned opposing to the optical disc to irradiates a light beam from a light source to an information recording surface of the optical disc. The objective lens is fixed at on the lens holder forming the actuator at a position closer to one end thereof. One coil substrate is fixed on one side face of the lens holder in a range from the one end of the lens holder to a center portion of the lens holder, and the other coil substrate is fixed on the other side face of the lens holder in a range from the other end of the lens holder to the center portion of the lens holder. Therefore, near the end of the lens holder on the objective lens side, the coil substrate is not attached to one side of the lens holder, providing a space below the objective lens. By arranging an optical system to guide the light beam to the objective lens via the space, the optical system can be arranged at the same height level as the actuator.

Abstract: A semiconductor wafer saw and method of using the same for dicing semiconductor wafers including a wafer saw including variable lateral indexing capabilities and multiple blades. The wafer saw, because of its variable indexing capabilities, can dice wafers having a plurality of differently sized semiconductor devices thereon into their respective discrete components. In addition, the wafer saw with its multiple blades, some of which may be independently laterally or vertically movable relative to other blades, can more efficiently dice silicon wafers into individual semiconductor devices.

Abstract: An integrated circuit including a power ring and an embedded low drop-off voltage regulator is disclosed herein. The regulator is located within an inner side of the power ring. An input of the regulator is coupled to the power ring. An output of the regulator is coupled to a circuit also included in the integrated circuit. The regulator is configured to fit within a bond pad frame.

Abstract: The invention provides a method of manufacturing a fin-type field effect transistor (FinFET) that forms a unique FinFET that has a first fin with a central channel region and source and drain regions adjacent the channel region, a gate intersecting the first fin and covering the channel region, and a second fin having only a channel region.

Abstract: TFT array substrates used for liquid crystal display panels are disclosed of which the fabrication processes are simplified and the manufacturing costs are reduced by reducing the number of masks used in fabricating the TFT array substrates. A gate wiring line metal film, a gate insulating film, a semiconductor film, and a contact electrode metal film are formed on a substrate surface. The contact electrode metal film, the semiconductor film, the gate insulating film, and the gate wiring line metal film are sequentially etched, by photolithography, using a first pattern, and the side surfaces of a gate wiring line metal film pattern, which is formed into portions of gate wiring lines and gate electrodes, are oxidized. A transparent conductive film is formed, and part of the transparent conductive film, the contact electrode metal film, and the semiconductor film are sequentially etched, by photolithography, using a second pattern.

Abstract: A circuit isolation technique that uses implanted ions in embedded portions of a wafer substrate to lower the resistance of the substrate under circuits formed on the wafer or portions of circuits formed on the wafer to prevent the flow of injected currents across the substrate. The embedded ions provide low resistance regions that allow injected currents from a circuit to flow directly to a ground potential in the same circuit rather than flowing across the substrate to other circuits. High energy implantation processes on the order of 1 MeV to 3 MeVs can be used to implant the ions in embedded regions. Multiple energy levels can be used to provide thick embedded layers either prior to or after application of an epitaxial layer. Various masking materials can be used to mask the isolation regions during the implantation process, including hard masking materials such as silicon dioxide or silicon nitride, poly-silicon or an amorphous silicon layer, and a photoresist layer.

Abstract: A method of forming a single crystal semiconductor film on a non-crystalline surface is described. In accordance with this method, a template layer incorporating an ordered array of nucleation sites is deposited on the non-crystalline surface, and the single crystal semiconductor film is formed on the non-crystalline surface from the ordered array of nucleation sites. An integrated circuit incorporating one or more single crystal semiconductor layers formed by this method also is described.

Abstract: One aspect of the present invention relates to a method to facilitate formation of seed layer portions on sidewall surfaces of a trench formed in a substrate. The method involves the steps of forming a conformal seed layer over a barrier layer disposed conformal to a trench, wherein the trench is formed in the substrate; reflecting a light beam of x-ray radiation at the seed layer sidewall portions; generating a measurement signal based on the reflected portion of the light beam; and determining a thickness of the sidewall portions based on the measurement signal while the sidewall portions are being formed over the trench.

Abstract: A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer that contains a photosensitive compound. The organic semiconductor layer is formed into memory cells using patterning techniques.

Abstract: A capacitance type dynamic quantity sensor device includes a sensor chip having movable electrodes and sensor-chip side fixed electrodes disposed to confront the movable electrodes in a substrate surface horizontal direction X and a circuit chip disposed to confront the sensor chip. The movable electrodes are joined to the substrate through spring portions having degrees of freedom in the substrate surface horizontal direction X and the substrate surface vertical direction Z, so that the movable electrodes are displaceable in both the directions X and Z. A circuit-chip side fixed electrode is equipped at the site corresponding to the movable electrodes. The sensor chip and the circuit chip are electrically connected to each other through bump electrodes.

Abstract: A method for forming arrays of metal, alloy, semiconductor or magnetic clusters is described. The method comprises placing a scaffold on a substrate, the scaffold comprising, for example, polynucleotides and/or polypeptides, and coupling the clusters to the scaffold. Methods of producing arrays in predetermined patterns and electronic devices that incorporate such patterned arrays are also described.

Abstract: A nano-scale system is provided, and a method of manufacture therefor, including a support material, a nanotube embedded in the support material and an electrical connection to the nanotube.

Abstract: After profiles of two chips are recognized on intermediate stages and their positions are corrected, collets are used as electrodes and a voltage is applied to the chips on bonding stage on which the chips are bonded onto a submount. Then, the respective two chips are allowed to emit light, final position correction is performed on the basis of the light-emission point data and bonding is performed. The two chips can be bonded at narrow pitches by tilting the collets with respect to chip surfaces. Consequently, two laser chips can be bonded at narrow pitches on one submount in high position accuracy.

Abstract: A silicon and silicon germanium based semiconductor MODFET device design and method of manufacture. The MODFET design includes a high-mobility layer structure capable of ultra high-speed, low-noise for a variety of communication applications including RF, microwave, sub-millimeter-wave and millimeter-wave. The epitaxial field effect transistor layer structure includes critical (vertical and lateral) device scaling and layer structure design for a high mobility strained n-channel and p-channel transistor incorporating silicon and silicon germanium layers to form the optimum modulation-doped heterostructure on an ultra thin SOI or SGOI substrate capable of achieving greatly improved RF performance.